CN110880543A - Preparation method of emitter on back of double-sided solar cell - Google Patents
Preparation method of emitter on back of double-sided solar cell Download PDFInfo
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- CN110880543A CN110880543A CN201911328524.2A CN201911328524A CN110880543A CN 110880543 A CN110880543 A CN 110880543A CN 201911328524 A CN201911328524 A CN 201911328524A CN 110880543 A CN110880543 A CN 110880543A
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- silicon wafer
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- grooving
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000002310 reflectometry Methods 0.000 claims abstract description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 16
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 239000003513 alkali Substances 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 3
- 230000000694 effects Effects 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- 239000003086 colorant Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a preparation method of a double-sided solar cell back emitter in the technical field of solar cells, which comprises the following steps: the method comprises the following steps: firstly, alkali polishing is carried out on a monocrystalline silicon wafer to remove a surface damage layer; step two: preparing a SiNx mask on the surface of the silicon wafer in a PECVD (plasma enhanced chemical vapor deposition) mode; step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, the width of the grooving is 30-130 mu m, and the line can be a continuous straight line, a line segment or a point array; step four: preparing a textured surface in a grooving area on the surface of the silicon wafer by using a chemical corrosion mode, wherein the reflectivity of the alkaline textured surface reaches 11-14%; step five: and diffusing the silicon wafer. By adopting the manufacturing method, 1) the damage layer of the laser to the silicon wafer is weakened by cleaning after the laser, and the conversion efficiency of the solar cell is improved; 2) compared with a laser, the chemical texturing method has a larger adjustment space of the sheet resistance.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a double-sided solar cell back emitter.
Background
PECVD is a process in which a gas containing atoms of a film component is ionized by means of microwaves or radio frequencies to locally form plasma, which is chemically very reactive and is easily reacted to deposit a desired film on a substrate. In order to allow chemical reactions to proceed at lower temperatures, the activity of the plasma is used to promote the reactions, and thus such CVD is called plasma-enhanced chemical vapor deposition.
A solar cell is a device that directly converts light energy into electrical energy based on the photovoltaic effect. In order to improve the conversion efficiency of the solar cell, a preparation process of a selective emitter is frequently used in a preparation process of a high-efficiency solar cell, and a general selective emitter adopts a process of diffusion and then laser doping. Therefore, there is a need for a new method for preparing selective emitter
Disclosure of Invention
The invention aims to provide a preparation method of a novel selective emitter of a solar cell.
In order to solve the technical problems, the invention provides the following technical scheme: a preparation method of a double-sided solar cell back emitter comprises the following steps:
the method comprises the following steps: firstly, alkali polishing is carried out on a monocrystalline silicon wafer to remove a surface damage layer;
step two: preparing a SiNx mask on the surface of the silicon wafer in a PECVD (plasma enhanced chemical vapor deposition) mode;
step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, the width of the grooving is 30-130 mu m, and the line can be a continuous straight line, a line segment or a point array;
step four: preparing a textured surface in a grooving area on the surface of a silicon wafer in a chemical corrosion mode, wherein the reflectivity of an alkali textured surface reaches 11-14%, then corroding the reflectivity of the textured surface to 19-26% by using a mixed solution of HF and HNO3, then completely removing a mask by using an HF solution, and forming two areas with different roughness on the surface of the silicon wafer: a velvet area and a polishing area;
step five: and diffusing the silicon wafer, wherein the surface activity of the textured area is strong, the doping concentration is high, the sheet resistance doping is carried out to 70-120 omega, the surface activity of the polishing area is weak, the doping concentration is low, and the sheet resistance doping is carried out to 120-160 omega, so that the selectively doped emitter is formed.
The invention has the beneficial effects that: by adopting the manufacturing method, 1) the damage layer of the laser to the silicon wafer is weakened by cleaning after the laser, and the conversion efficiency of the solar cell is improved; 2) compared with a laser, the chemical texturing method has a larger adjustment space of the sheet resistance.
Further, the alkali polishing mode of the first step is as follows: a15% KOH solution was used at 65 ℃ and the silicon wafer surface reflectance reached 34%.
Further, a PECVD mode is used for preparing the SiNx mask in the second step, the thickness of the SiNx is 60-90 nm, the refractive index is 2.0-2.3, and the SiNx mask is made into red or blue colors which can be easily identified by naked eyes.
Furthermore, in the third step, the laser grooving pattern is set to be consistent with the back-side metalized grid line pattern, and the width of the laser grooving is 30-130 microns.
Further, the chemical texturing method in the fourth step is as follows: firstly, HF cleaning is carried out, so that SiNx residual on the surface of a slotting region is removed completely; then, alkali texturing is carried out, a covering area of SiNx cannot be used for preparing a textured surface, and a grooving area can be used for preparing the textured surface, so that the surface reflectivity of the textured surface reaches 11-14%; then, HF and HNO3 corrosion is carried out, so that the reflectivity of the alloy is increased to 19-26%; and then, carrying out HF cleaning to completely remove the SiNx layer in the polishing area.
Detailed Description
The following is further detailed by way of specific embodiments:
example 1
A preparation method of a double-sided solar cell back emitter comprises the following steps:
the method comprises the following steps: using 15% KOH solution, controlling the temperature to 65 ℃, enabling the reflectivity of the surface of the silicon wafer to reach 34%, and removing the surface damage layer;
step two: a PECVD (plasma enhanced chemical vapor deposition) method is used for preparing a SiNx mask, the thickness of the SiNx is 60nm, and the refractive index of the SiNx is 2.0, so that the SiNx mask can be made into colors which can be easily identified, such as red or blue, and the like, visible to naked eyes;
step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, and the width of the grooving is 30 micrometers;
step four: firstly, HF cleaning is carried out, so that SiNx residual on the surface of a slotting region is removed completely; then, alkali texturing is carried out, a covering area of SiNx cannot be used for preparing a textured surface, and a grooving area can be used for preparing the textured surface, so that the surface reflectivity of the textured surface reaches 11%; then, HF and HNO3 corrosion is carried out, so that the reflectivity of the film is increased to 19%; and then, carrying out HF cleaning to completely remove the SiNx layer in the polishing area.
Step five: and diffusing the silicon wafer, wherein the surface activity of the textured area is stronger, the doping concentration is high, the sheet resistance is doped to 70 omega, the surface activity of the polished area is weak, the doping concentration is low, and the sheet resistance is doped to 120 omega, so that the selectively doped emitter is formed.
Example 2
A preparation method of a double-sided solar cell back emitter comprises the following steps:
the method comprises the following steps: using 15% KOH solution, controlling the temperature to 65 ℃, enabling the reflectivity of the surface of the silicon wafer to reach 34%, and removing the surface damage layer;
step two: a PECVD (plasma enhanced chemical vapor deposition) method is used for preparing a SiNx mask, the thickness of the SiNx is 75nm, the refractive index of the SiNx is 2.1, and the SiNx mask is made into colors which can be easily identified, such as red or blue and the like, and can be seen by naked eyes;
step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, and the width of the grooving is 70 mu m;
step four: firstly, HF cleaning is carried out, so that SiNx residual on the surface of a slotting region is removed completely; then, alkali texturing is carried out, a covering area of SiNx cannot be used for preparing a textured surface, and a grooving area can be used for preparing the textured surface, so that the surface reflectivity of the textured surface reaches 12%; then, HF and HNO3 corrosion is carried out, so that the reflectivity of the film is increased to 21%; and then, carrying out HF cleaning to completely remove the SiNx layer in the polishing area.
Step five: and diffusing the silicon wafer, wherein the surface activity of the textured area is stronger, the doping concentration is high, the sheet resistance is doped to 80 omega, the surface activity of the polishing area is weak, the doping concentration is low, and the sheet resistance is doped to 140 omega, so that the selectively doped emitter is formed.
Example 3
A preparation method of a double-sided solar cell back emitter comprises the following steps:
the method comprises the following steps: using 15% KOH solution, controlling the temperature to 65 ℃, enabling the reflectivity of the surface of the silicon wafer to reach 34%, and removing the surface damage layer;
step two: a PECVD (plasma enhanced chemical vapor deposition) method is used for preparing a SiNx mask, the thickness of the SiNx is 90nm, and the refractive index of the SiNx is 22.3, so that the SiNx mask can be made into colors which can be easily identified, such as red or blue, and the like, visible to naked eyes;
step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, and the width of the grooving is 130 mu m;
step four: firstly, HF cleaning is carried out, so that SiNx residual on the surface of a slotting region is removed completely; then, alkali texturing is carried out, a suede surface cannot be prepared in a SiNx covering area, and a suede surface can be prepared in a grooving area, so that the surface reflectivity of the suede surface reaches 14%; then, HF and HNO3 corrosion is carried out, so that the reflectivity of the film is increased to 26%; and then, carrying out HF cleaning to completely remove the SiNx layer in the polishing area.
Step five: and diffusing the silicon wafer, wherein the surface activity of the textured area is stronger, the doping concentration is high, the sheet resistance is doped to 120 omega, the surface activity of the polishing area is weak, the doping concentration is low, and the sheet resistance is doped to 160 omega, so that the selectively doped emitter is formed.
Claims (5)
1. A preparation method of a double-sided solar cell back emitter is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: firstly, alkali polishing is carried out on a monocrystalline silicon wafer to remove a surface damage layer;
step two: preparing a SiNx mask on the surface of the silicon wafer in a PECVD (plasma enhanced chemical vapor deposition) mode;
step three: designing a specific pattern, and removing the mask of a partial region by using laser, namely grooving, wherein the grooved pattern is consistent with the metalized grid line, the width of the grooving is 30-130 mu m, and the line can be a continuous straight line, a line segment or a point array;
step four: preparing a textured surface in a grooving area on the surface of a silicon wafer in a chemical corrosion mode, wherein the reflectivity of an alkali textured surface reaches 11-14%, then corroding the reflectivity of the textured surface to 19-26% by using a mixed solution of HF and HNO3, then completely removing a mask by using an HF solution, and forming two areas with different roughness on the surface of the silicon wafer: a velvet area and a polishing area;
step five: and diffusing the silicon wafer, wherein the surface activity of the textured area is strong, the doping concentration is high, the sheet resistance doping is carried out to 70-120 omega, the surface activity of the polishing area is weak, the doping concentration is low, and the sheet resistance doping is carried out to 120-160 omega, so that the selectively doped emitter is formed.
2. The method for preparing the emitter on the back side of the bifacial solar cell as claimed in claim 1, wherein: the alkali polishing mode of the first step is as follows: a15% KOH solution was used at 65 ℃ and the silicon wafer surface reflectance reached 34%.
3. The method for preparing the emitter on the back side of the bifacial solar cell as claimed in claim 2, wherein: and preparing the SiNx mask in a PECVD mode, wherein the thickness of the SiNx is 60-90 nm, the refractive index is 2.0-2.3, and the SiNx mask is made into red or blue colors which can be easily identified by naked eyes.
4. The method for preparing the emitter on the back side of the bifacial solar cell as claimed in claim 3, wherein: and in the third step, the laser grooving pattern is set to be consistent with the back-side metalized grid line pattern, and the width of the laser grooving is 30-130 mu m.
5. The method for preparing the emitter on the back surface of the bifacial solar cell as claimed in claim 4, wherein: the chemical texturing method in the fourth step comprises the following steps: firstly, HF cleaning is carried out, so that SiNx residual on the surface of a slotting region is removed completely; then, alkali texturing is carried out, a covering area of SiNx cannot be used for preparing a textured surface, and a grooving area can be used for preparing the textured surface, so that the surface reflectivity of the textured surface reaches 11-14%; then, HF and HNO3 corrosion is carried out, so that the reflectivity of the alloy is increased to 19-26%; and then, carrying out HF cleaning to completely remove the SiNx layer in the polishing area.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911328524.2A CN110880543A (en) | 2019-12-20 | 2019-12-20 | Preparation method of emitter on back of double-sided solar cell |
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| CN201911328524.2A CN110880543A (en) | 2019-12-20 | 2019-12-20 | Preparation method of emitter on back of double-sided solar cell |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| US20120090673A1 (en) * | 2010-10-19 | 2012-04-19 | Industrial Technology Research Institute | Method for forming solar cell with selective emitters |
| CN102709391A (en) * | 2012-05-29 | 2012-10-03 | 上饶光电高科技有限公司 | Preparation method of selective emitter solar cell |
| CN102956719A (en) * | 2011-08-29 | 2013-03-06 | 北京师范大学 | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
| CN109411565A (en) * | 2018-09-29 | 2019-03-01 | 盐城阿特斯协鑫阳光电力科技有限公司 | Solar battery sheet and preparation method thereof, photovoltaic module |
-
2019
- 2019-12-20 CN CN201911328524.2A patent/CN110880543A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533871A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Selective diffusion technology for crystalline silicon solar cell |
| US20120090673A1 (en) * | 2010-10-19 | 2012-04-19 | Industrial Technology Research Institute | Method for forming solar cell with selective emitters |
| CN102956719A (en) * | 2011-08-29 | 2013-03-06 | 北京师范大学 | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure |
| CN102709391A (en) * | 2012-05-29 | 2012-10-03 | 上饶光电高科技有限公司 | Preparation method of selective emitter solar cell |
| CN109346535A (en) * | 2018-09-14 | 2019-02-15 | 江苏林洋光伏科技有限公司 | The method that laser prepares silicon solar cell selectivity flannelette and emitter |
| CN109411565A (en) * | 2018-09-29 | 2019-03-01 | 盐城阿特斯协鑫阳光电力科技有限公司 | Solar battery sheet and preparation method thereof, photovoltaic module |
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