CN108987531A - One type monocrystalline PERC preparation method of solar battery - Google Patents
One type monocrystalline PERC preparation method of solar battery Download PDFInfo
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 29
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 29
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000003513 alkali Substances 0.000 claims abstract description 57
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 235000008216 herbs Nutrition 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 210000002268 wool Anatomy 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000654 additive Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 9
- 238000005554 pickling Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- 229910019213 POCl3 Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000002474 experimental method Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000011868 grain product Nutrition 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a type monocrystalline PERC preparation method of solar battery, comprising the following steps: S1, making herbs into wool；S2, diffusion；S3, alkali are thrown；S4, annealing；S5, plated film；S6, laser grooving；S7, silk-screen.The present invention is when handling class monocrystalline, in alkali making herbs into wool section, the processing of alkali rough polishing is increased with preliminary treatment class monocrystalline silicon sheet surface, the best alkali making herbs into wool formula of liquid obtained by many experiments, technological parameter, and it is added to no alcohol flocking additive, the reaction rate ratio of silicon chip surface energy lower and energy higher position can effectively be controlled, Woolen-making liquid surface tension can be reduced simultaneously, so that the electrical property after class monocrystalline superposition PERC technology is further promoted, and the present invention is when handling class monocrystalline silicon piece, etch cleaner mode used by class monocrystalline silicon piece is alkali polishing, the effect that class monocrystalline PERC cell piece is thrown due to back side alkali, open-circuit voltage and short circuit current have the promotion of certain amplitude in its unit for electrical property parameters.
Description
Technical field
The present invention relates to photovoltaic cell manufacture technology fields, specially a type monocrystalline PERC solar battery preparation side
Method.
Background technique
Solar energy is as inexhaustible clean energy resource.Solar energy can be rationally utilized, not only can solve
Energy crisis, but also other modes can be reduced and obtain the environmental disruption of energy bring.Therefore, solar energy becomes clean energy resource
It is reasonable open and using becoming an especially important project.Preferred material of the semiconductor material as production solar battery
Material, especially crystalline silicon material, because of its more mature manufacture craft and auxiliary facility, so that silica-based solar cell becomes
Most fast one of the industry of clean energy resource market development at present.
Crystal silicon solar energy battery is divided by substrate polysilicon and two kinds of monocrystalline silicon.Polysilicon chip was being produced due to it
The raw material of low-purity are needed in journey, so its speed of production is relatively fast, and battery conversion efficiency can satisfy market enough
Demand, therefore it has enough market competitiveness in price and its performance.And monocrystalline silicon piece needs the raw material of high-purity,
Therefore the cost of raw material is relatively higher, while speed of production is slower, though its transfer efficiency is more obvious compared with polycrystalline advantage, because its
Disadvantage in price, competitiveness is smaller in the market at present.Class monocrystalline solar cells, which have, such as compares polycrystalline silicon solar
Cell conversion rate is higher, in component stage advantage more lower than p type single crystal silicon battery power consumption.In addition, class monocrystalline solar energy
Battery price is between polycrystal silicon cell and p type single crystal silicon battery price.
The increase of the market demand, high efficiency crystalline silicon solar cell new technology emerge one after another, and transmitting is wherein passivated in new technology
Pole and back side battery (PERC) are most representative.PERC, which is all in, increases the different equipment with conventional producing line in two in original technique,
However efficiency but has nearly 1% promotion.Major photovoltaic enterprise is dedicated to researching and developing the PERC battery new technology of oneself one after another, and gradually
The manufacturing capacity for having volume production PERC battery.Therefore, the drop based on current photovoltaic market originally proposes effect pressure, and class monocrystalline is superimposed PERC
The determination of the preparation process of solar battery is necessary.Mainly the capturing for preparation of class monocrystalline superposition PERC battery is a little class
The production of monocrystalline front pyramid flannelette, polished backside and backside oxide aluminium and silicon nitride film matching technique, other processes are such as
Conventional single PERC technique only needs simple optimization process variable that the electrical property of optimal class monocrystalline PERC can be realized.
Since current class monocrystalline has many small crystal boundaries similar to conventional polycrystalline, and existed according to other region surfaces brilliant
The difference of grain product, can select different making herbs into wool modes.However, since class monocrystalline shows crystal boundary, chip area and magazine
It is unevenly distributed, according to the method for conventional acid making herbs into wool, cell piece transfer efficiency produced is lower.According to conventional single alkali system
The method of suede, the difference of anisotropic etch cause different intercrystalline reflectivity higher, and difference in appearance is larger, efficiency float compared with
Greatly.In addition, the processing mode of back side pyramid flannelette, directly influences later process back side plating aluminium oxide and silicon nitride passivation
Film, with etc monocrystalline PERC battery transfer efficiency and do not have more apparent advantage.
Summary of the invention
The purpose of the present invention is to provide a type monocrystalline PERC preparation method of solar battery, to solve above-mentioned background skill
The problem of being proposed in art.
To achieve the above object, the invention provides the following technical scheme:
One type monocrystalline PERC preparation method of solar battery, comprising the following steps:
S1, making herbs into wool: alkali rough polishing, alkali making herbs into wool and pickling are successively carried out to class monocrystalline silicon piece；
Wherein, matching in alkali rough polishing slot with liquid is KOH:DI water=4:1, and temperature is 60 DEG C, and the alkali rough polishing time is 150s；
In alkali texturing slot is KOH:DI water=5:1 with liquid proportion, and temperature is 84 DEG C, and the alkali making herbs into wool time is 400s, and to
It is added in alkali texturing slot without alcohol flocking additive；
In descaling bath is HCl:KOH:DI water=1:2:10 with liquid proportion, and temperature is 65 DEG C, pickling time 200s；
S2, diffusion: the class monocrystalline silicon sheet surface after S1 passes through POCl3Liquid state diffusion source thermal diffusion method prepares P-N junction, expands
Dissipating temperature is 800 DEG C, diffusion time 75min；
Small nitrogen and oxygen are passed through when diffusion, medium and small nitrogen flow is 150ml/min, and oxygen flow 200ml/min is passed through
Time is 500s；
S3, alkali throw: to the class monocrystalline silicon piece after S2 successively carry out alkali throwing, after alkali cleaning, first of pickling and second acid
It washes；
Wherein, it is KOH:DI water=1:15 with liquid proportion that alkali, which is thrown in slot, is 100% with hot water ratio, and temperature is 72 DEG C,
Alkali throws the time as 180s, and throws in slot and be added without alcohol flocking additive to alkali；
Matching in alkaline bath with liquid is KOH:DI water=1:15 afterwards, is 100% with hot water ratio, and temperature is 60 DEG C, alkali
The throwing time is 100s；
In first of descaling bath is HCl:H with liquid proportion2O2: DI water=1.2:1:1.5 is 70% with hot water ratio, temperature
Degree is 30 DEG C, time 100s；
In second descaling bath is HF:DI water=1:15 with liquid proportion, and temperature is 25 DEG C of room temperature, time 100s；
S4, annealing: making annealing treatment the class monocrystalline silicon piece after S3, and annealing temperature is 750 DEG C, and annealing time is
90min；
Oxygen is passed through when annealing, wherein oxygen flow is 1000ml/min, and being passed through the time is 300s；
S5, plated film: plated film is carried out to the class monocrystalline silicon piece after S4；
Wherein, backside oxide aluminium coating process are as follows: TMA flow is 500mg/min, and Ar flow is 600sccm, N2O flow
For 800sccm, temperature is 300 DEG C, belt speed 190cm/min；
Back side silicon nitride silicon coating process are as follows: NH3: SiH4=2.5:1, temperature are 500 DEG C, belt speed 220cm/min；
Front side silicon nitride silicon coating process are as follows: NH3: SiH4=3:1, temperature are 400 DEG C, belt speed 175cm/min；
S6, laser grooving: laser grooving is carried out to the class monocrystalline silicon piece after S5；
Laser power is 90%, frequency 500KHZ；
S7, silk-screen: after the class monocrystalline silicon piece after S6 successively printed back electrode, back surface field and front electrode,
Test electrical property.
Preferably, after being washed to the class monocrystalline silicon piece after S3 and dry blanking, then S4 is carried out.
Preferably, the etching extent of class monocrystalline silicon piece is 0.5-0.6g after S1, and reflectivity controls below 10%.
Preferably, the sheet resistance of class monocrystalline silicon piece is controlled in 72-78 Ω/ after S2.
Preferably, in 0.28-0.3g, backside reflection rate is controlled in 37%- for the etch amount control of class monocrystalline silicon piece after S3
39%.
Preferably, after S5 the backside oxide aluminium film thickness monitoring of class monocrystalline silicon piece in 25-30nm, back side silicon nitride thickness control
System is controlled in 83-86nm, just in 120-130nm, the control of back side silicon nitride silicon refractive index in 2.05-2.10, front side silicon nitride film thickness
Face refractive index of silicon nitride is controlled in 2.07-2.13.
Preferably, the hot spot of class monocrystalline silicon piece is controlled in 35-40nm after S6.
Compared with prior art, the beneficial effects of the present invention are:
The present invention, in alkali making herbs into wool section, increases the processing of alkali rough polishing when handling class monocrystalline with preliminary treatment class monocrystalline silicon piece
Surface, in addition, the best alkali making herbs into wool formula of liquid, the technological parameter that are obtained by many experiments, and it is added to no alcohol making herbs into wool addition
Agent, can effectively control the reaction rate ratio of silicon chip surface energy lower and energy higher position, while can reduce making herbs into wool
Liquid surface tension improves Woolen-making liquid in the spreadability of silicon chip surface, to keep making herbs into wool reaction more uniform, obtains better anti-reflection
Effect is penetrated, is easily formed similar to the pyramid flannelette after fine-hair maring using monocrystalline silicon slice, and more uniform pyramid flannelette, favorably
Being uniformly distributed for front side silicon nitride film thickness is more conducive to when PECVD plated film, so that after class monocrystalline superposition PERC technology
Electrical property further promoted.
For the present invention when handling class monocrystalline silicon piece, etch cleaner mode used by class monocrystalline silicon piece is alkali polishing, class list
Crystal silicon chip is after making herbs into wool is handled, and two-sided there are pyramid surface textures, after alkali polishing treatment, back side pyramid tower ridge
It is corroded first, with being gradually increased for etch amount, pyramid merges degree and increases, more apparent mirror surface structure is formed, because
This, alkali throws that treated that class monocrystalline silicon piece backside reflection rate can be close with the backside reflection rate of monocrystalline, to increase to long wave
Long absorption.In addition to alkali throw treated silicon chip back side reflectivity it is higher other than, due to the mirror surface structure at its back side, silicon chip surface
Specific surface area is smaller, thus compound smaller, minority carrier life time is further promoted therewith, in addition, the mirror surface structure at the back side is also
Back side plating aluminium oxide and when silicon nitride passive film, film thickness is more uniform, and passivation effect is further promoted, at laser grooving process
Manage that the more uniform backside passivation film effect of film thickness is preferable, and the aluminium paste after printing can contact closely with silicon chip back side, when sintering
Cofiring is more uniform, so that more uniform alloy-layer is formed, therefore, the work that class monocrystalline PERC cell piece is thrown due to back side alkali
With open-circuit voltage and short circuit current have the promotion of certain amplitude in unit for electrical property parameters.
Detailed description of the invention
Fig. 1 is method flow schematic diagram of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution:
One type monocrystalline PERC preparation method of solar battery, comprising the following steps:
S1, making herbs into wool: prepare and just match liquid: KOH:DI water is carried out according to the ratio of 4:1 with liquid, temperature 60 in alkali rough polishing slot
DEG C, time 150s；KOH:DI water is carried out according to the ratio of 5:1 with liquid in alkali texturing slot, and temperature is 84 DEG C, and the making herbs into wool time is
400s, and a certain amount of no alcohol flocking additive is added into texturing slot.In descaling bath: HCl:KOH:DI water is according to 1:2:10's
Ratio is carried out with liquid, and temperature is 65 DEG C, time 200s.
According to above-mentioned alkali making herbs into wool formula with after liquid, alkali making herbs into wool, class monocrystalline silicon piece after making herbs into wool are carried out to class monocrystalline silicon piece
Etching extent be that 0.05-0.06g, reflectivity can be stably held in 10% or less.
S2, diffusion: small nitrogen flow is 150ml/min, oxygen flow 200ml/min, time 500s.
Class monocrystalline silicon sheet surface after S1 prepares P-N junction, adjustment diffusion temperature by POCL3 liquid state diffusion source thermal diffusion method
Degree is 800 DEG C, time 75min, and sheet resistance is controlled in 72-78 Ω/.
S3, alkali are thrown: prepare and just match liquid: alkali throws KOH:DI water in slot alkali texturing slot and match with liquid according to the ratio of 1:15
Hot water ratio is 100%, and temperature is 72 DEG C, and the making herbs into wool time is 180S, and to alkali throws that a certain amount of no alcohol alkali is added in slot and throws and add
Add agent；KOH:DI water is carried out according to the ratio of 1:15 with liquid in alkaline bath afterwards, is 100% with hot water ratio, and temperature is 60 DEG C, when
Between be 100s；HCl::H in first of descaling bath2O2: DI water carries out matching liquid according to the ratio of 1.2:1:1.5, is with hot water ratio
70%, temperature is 30 DEG C, time 100s；HF:DI water is carried out according to the ratio of 1:15 with liquid in second descaling bath, and temperature is
25 DEG C of room temperature, time 100s；
Throw formula with after liquid according to above-mentioned alkali, the class monocrystalline silicon piece after S2 is put into alkali and throws in slot, thrown through alkali, after alkali
It washes, blanking after pickling, washing and drying, so that the control of silicon chip erosion amount, in 0.3g, the backside reflection rate after alkali is thrown is reachable
38% or so.
S4, annealing: oxygen flow 1000ml/min, leading to the oxygen time is 300s, and temperature is 750 DEG C, total annealing time is
90min.After S3 treated class monocrystalline silicon piece annealing, it can normally flow to next process.
S5, plated film: backside oxide aluminium coating process are as follows: TMA flow is 500mg/min, and Ar flow is 600sccm, N2O stream
Amount is 800sccm, and temperature is 300 DEG C, belt speed 190cm/min；Back side silicon nitride silicon coating process are as follows: NH3: SiH4=2.5:1,
Temperature is 500 DEG C, belt speed 220cm/min.Front side silicon nitride silicon coating process are as follows: NH3: SiH4=3:1, temperature are 400 DEG C, band
Speed is 175cm/min.
After the setting of above-mentioned process program, after the class monocrystalline silicon piece plated film after S4 anneals, so that silicon chip back side plated film
Aluminium oxide film thickness monitoring is controlled 2.10, just in 30nm, the control of back side silicon nitride thickness in 130nm, back side silicon nitride silicon refractive index
Face silicon nitride film thickness monitoring is controlled in 86nm, front side silicon nitride silicon refractive index 2.13.
S6, laser grooving: laser power 90%, frequency 500KHZ.
After the setting of above-mentioned process program, the class monocrystalline silicon piece hot spot after S5 plated film is directly controlled in 40nm.
S7, silk-screen: after the class monocrystalline silicon piece after S6 successively printed back electrode, back surface field and front electrode,
Test electrical property.
Comparative experiments: according to, for the technological parameter after class monocrystalline PERC optimization, comparison is similar mentioned in the present invention
The conventional polycrystalline PERC of type, transfer efficiency, open-circuit voltage, short circuit current and fill factor have different degrees of mention in electrical property
It rises, shown in table 1 specific as follows:
Table 1
It apparent can be obtained according to the data in table 1, the items electricity of the class monocrystalline silicon piece obtained through this embodiment
It learns performance data and compares conventional silicon wafers and have and be obviously improved, effect is very good, is worthy to be popularized very much.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a type monocrystalline PERC preparation method of solar battery, which comprises the following steps:
S1, making herbs into wool: alkali rough polishing, alkali making herbs into wool and pickling are successively carried out to class monocrystalline silicon piece；
Wherein, matching in alkali rough polishing slot with liquid is KOH:DI water=4:1, and temperature is 60 DEG C, and the alkali rough polishing time is 150s；
In alkali texturing slot is KOH:DI water=5:1 with liquid proportion, and temperature is 84 DEG C, and the alkali making herbs into wool time is 400s, and to alkali system
It is added in suede slot without alcohol flocking additive；
In descaling bath is HCl:KOH:DI water=1:2:10 with liquid proportion, and temperature is 65 DEG C, pickling time 200s；
S2, diffusion: the class monocrystalline silicon sheet surface after S1 passes through POCl3Liquid state diffusion source thermal diffusion method prepares P-N junction, diffusion temperature
Degree is 800 DEG C, diffusion time 75min；
Small nitrogen and oxygen are passed through when diffusion, medium and small nitrogen flow is 150ml/min, and oxygen flow 200ml/min is passed through the time
For 500s；
S3, alkali throw: to the class monocrystalline silicon piece after S2 successively carry out alkali throwing, after alkali cleaning, first of pickling and second pickling；
Wherein, it is KOH:DI water=1:15 with liquid proportion that alkali, which is thrown in slot, is 100% with hot water ratio, temperature is 72 DEG C, and alkali is thrown
Time is 180s, and throws in slot and be added without alcohol flocking additive to alkali；
The liquid proportion of matching in alkaline bath is KOH:DI water=1:15 afterwards, is 100% with hot water ratio, temperature is 60 DEG C, when alkali is thrown
Between be 100s；
In first of descaling bath is HCl:H with liquid proportion2O2: DI water=1.2:1:1.5, is 70% with hot water ratio, and temperature is
30 DEG C, time 100s；
In second descaling bath is HF:DI water=1:15 with liquid proportion, and temperature is 25 DEG C of room temperature, time 100s；
S4, annealing: making annealing treatment the class monocrystalline silicon piece after S3, and annealing temperature is 750 DEG C, annealing time 90min；
Oxygen is passed through when annealing, wherein oxygen flow is 1000ml/min, and being passed through the time is 300s；
S5, plated film: plated film is carried out to the class monocrystalline silicon piece after S4；
Wherein, backside oxide aluminium coating process are as follows: TMA flow is 500mg/min, and Ar flow is 600sccm, N2O flow is
800sccm, temperature are 300 DEG C, belt speed 190cm/min；
Back side silicon nitride silicon coating process are as follows: NH3:SiH4=2.5:1, temperature are 500 DEG C, belt speed 220cm/min；
Front side silicon nitride silicon coating process are as follows: NH3: SiH4=3:1, temperature are 400 DEG C, belt speed 175cm/min；
S6, laser grooving: laser grooving is carried out to the class monocrystalline silicon piece after S5；
Laser power is 90%, frequency 500KHZ；
S7, silk-screen: after the class monocrystalline silicon piece after S6 successively printed back electrode, back surface field and front electrode, test
Electrical property.
2. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: to after S3
Class monocrystalline silicon piece washed and dry blanking after, then carry out S4.
3. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: the class after S1
The etching extent of monocrystalline silicon piece is 0.5-0.6g, and reflectivity controls below 10%.
4. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: the class after S2
The sheet resistance of monocrystalline silicon piece is controlled in 72-78 Ω/.
5. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: the class after S3
In 0.28-0.3g, backside reflection rate is controlled in 37%-39% for the etch amount control of monocrystalline silicon piece.
6. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: the class after S5
The backside oxide aluminium film thickness monitoring of monocrystalline silicon piece is controlled in 25-30nm, back side silicon nitride thickness in 120-130nm, back side silicon nitride
The control of silicon refractive index exists in 2.05-2.10, the control of front side silicon nitride film thickness in 83-86nm, the control of front side silicon nitride silicon refractive index
2.07-2.13。
7. type monocrystalline PERC preparation method of solar battery according to claim 1, it is characterised in that: the class after S6
The hot spot of monocrystalline silicon piece is controlled in 35-40nm.
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| CN109616556A (en) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece |
| CN110137309A (en) * | 2019-05-23 | 2019-08-16 | 通威太阳能（成都）有限公司 | A method of promoting the anti-PID performance in the double-side cell back side |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN111883617A (en) * | 2020-08-03 | 2020-11-03 | 山西潞安太阳能科技有限责任公司 | Production process of quasi-single crystal battery piece |
| CN112768554A (en) * | 2020-12-30 | 2021-05-07 | 横店集团东磁股份有限公司 | Alkali polishing method based on back full-contact passivation material, crystalline silicon solar cell and preparation method |
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| CN109616556A (en) * | 2018-12-18 | 2019-04-12 | 韩华新能源（启东）有限公司 | A kind of annealing of silicon chip back side and the integrated method of front plated film and a kind of preparation method of cell piece |
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| CN112768554A (en) * | 2020-12-30 | 2021-05-07 | 横店集团东磁股份有限公司 | Alkali polishing method based on back full-contact passivation material, crystalline silicon solar cell and preparation method |
| CN113380923A (en) * | 2021-05-27 | 2021-09-10 | 广东爱旭科技有限公司 | Method for manufacturing single crystal PERC battery capable of reducing metal impurities and battery |
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