CN110868799A - Transparent COF design method - Google Patents

Transparent COF design method Download PDF

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Publication number
CN110868799A
CN110868799A CN201911124014.3A CN201911124014A CN110868799A CN 110868799 A CN110868799 A CN 110868799A CN 201911124014 A CN201911124014 A CN 201911124014A CN 110868799 A CN110868799 A CN 110868799A
Authority
CN
China
Prior art keywords
transparent
cof
layer
copper foil
design method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201911124014.3A
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Chinese (zh)
Inventor
祁思瑞
王健
孙彬
沈洪
李晓华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Shangda Electronics Co Ltd
Original Assignee
Jiangsu Shangda Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Shangda Electronics Co Ltd filed Critical Jiangsu Shangda Electronics Co Ltd
Priority to CN201911124014.3A priority Critical patent/CN110868799A/en
Publication of CN110868799A publication Critical patent/CN110868799A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention provides a design method of a transparent COF (chip on film), and relates to the technical field of COFs. According to the design method of the transparent COF, the transparent COF consists of a transparent PI layer and a copper foil layer; wherein the transparent COF comprises the following preparation steps: s1, preparing a transparent PI layer, and inspecting the used transparent PI layer to determine that the transparent PI layer is not damaged; s2, forming a main copper foil layer on one side of the transparent PI layer by chemical deposition copper plating to obtain a transparent COF; and S3, detecting the prepared transparent COF, and determining whether the various performances of the transparent COF are qualified. The transparent COF formed by the transparent PI layer and the copper foil layer can clearly see the internal circuit condition, the checking accuracy of the COF internal circuit is improved, the leakage detection problem is greatly reduced, the product quality is improved, and meanwhile, unprecedented visual perception and brand-new experience can be brought to a user.

Description

Transparent COF design method
Technical Field
The invention relates to the technical field of COF (chip on film), in particular to a design method of a transparent COF.
Background
COF is commonly called as chip on film, which is a soft chip on film packaging technology for fixing an Integrated Circuit (IC) on a flexible circuit board, and combines a chip with a flexible substrate circuit by using a soft additional circuit board as a packaging chip carrier, or a soft additional circuit board without packaging the chip by single finger, and comprises tape-on-tape packaging production (TAB substrate, the manufacturing process is called as TCP), a soft board connection chip assembly and soft IC carrier packaging.
The conventional COF structure is composed of a PI layer and a copper foil layer, the PI layer of the COF is not transparent because the metal layer is not transparent, the PI layer of the COF is not transparent, the inspection of the internal circuit of the COF is seriously influenced by the non-transparent PI material, the internal circuit of the COF cannot be seen through microscopic examination and human examination when the quality appearance of the PI layer is inspected, and thus, the poor leakage inspection of the batch circuits is caused, and the product quality is seriously influenced.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a design method of a transparent COF (chip on film), which solves the problems that the circuits in the COF cannot be seen through microscopic examination and human inspection when an opaque PI layer is subjected to quality appearance inspection, so that batch circuits are poor and missed to be inspected, and the product quality is seriously influenced.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a design method of a transparent COF (chip on film) comprises a transparent PI layer and a copper foil layer;
the transparent COF comprises the following preparation steps:
s1, preparing a transparent PI layer, and inspecting the used transparent PI layer to determine that the transparent PI layer is not damaged;
s2, forming a main copper foil layer on one side of the transparent PI layer by chemical deposition copper plating to obtain a transparent COF;
and S3, detecting the prepared transparent COF, and determining whether the various performances of the transparent COF are qualified.
Preferably, the thickness of the transparent PI layer is 5 μm to 100 μm.
Preferably, the thickness of the copper foil layer is 3 to 30 μm.
(III) advantageous effects
The invention provides a design method of a transparent COF. The method has the following beneficial effects:
1. the transparent COF formed by the transparent PI layer and the copper foil layer can clearly see the internal circuit condition, the checking accuracy of the COF internal circuit is improved, the leakage detection problem is greatly reduced, and the product quality is improved.
2. The transparent PI layer improves the checking function of the COF internal circuit, has the functions of high flexibility, light weight, high impact resistance, high heat-resistant stability, corrosion resistance, insulativity and the like, and can bring unprecedented visual perception and brand-new experience to users.
Drawings
FIG. 1 is a schematic view of the structure of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example (b):
as shown in fig. 1, an embodiment of the invention provides a method for designing a transparent COF, where the transparent COF is composed of a transparent PI layer and a copper foil layer;
wherein the transparent COF comprises the following preparation steps:
s1, preparing a transparent PI layer, and inspecting the used transparent PI layer to determine that the transparent PI layer is not damaged, wherein the thickness of the transparent PI layer is 5-100 μm;
s2, forming a main copper foil layer on one side of the transparent PI layer by chemical deposition copper plating, wherein the thickness of the copper foil layer is 3-30 μm, and then obtaining the transparent COF;
and S3, detecting the prepared transparent COF, and determining whether the various performances of the transparent COF are qualified.
The transparent COF formed by the transparent PI layer and the copper foil layer can clearly see the internal circuit condition, so that the accuracy of the circuit inspection in the COF is improved, the problem of missed inspection is greatly reduced, and the product quality is improved; the transparent PI layer improves the checking function of the COF internal circuit, has the functions of high flexibility, light weight, high impact resistance, high heat-resistant stability, corrosion resistance, insulativity and the like, and can bring unprecedented visual perception and brand-new experience to users.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (3)

1. A method for designing a transparent COF, comprising: the transparent COF consists of a transparent PI layer and a copper foil layer;
the transparent COF comprises the following preparation steps:
s1, preparing a transparent PI layer, and inspecting the used transparent PI layer to determine that the transparent PI layer is not damaged;
s2, forming a main copper foil layer on one side of the transparent PI layer by chemical deposition copper plating to obtain a transparent COF;
and S3, detecting the prepared transparent COF, and determining whether the various performances of the transparent COF are qualified.
2. A transparent COF design process according to claim 1, wherein: the thickness of the transparent PI layer is 5-100 mu m.
3. A transparent COF design process according to claim 1, wherein: the thickness of the copper foil layer is 3-30 μm.
CN201911124014.3A 2019-11-15 2019-11-15 Transparent COF design method Pending CN110868799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911124014.3A CN110868799A (en) 2019-11-15 2019-11-15 Transparent COF design method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911124014.3A CN110868799A (en) 2019-11-15 2019-11-15 Transparent COF design method

Publications (1)

Publication Number Publication Date
CN110868799A true CN110868799A (en) 2020-03-06

Family

ID=69654081

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911124014.3A Pending CN110868799A (en) 2019-11-15 2019-11-15 Transparent COF design method

Country Status (1)

Country Link
CN (1) CN110868799A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1491073A (en) * 2002-09-02 2004-04-21 古河电路铜箔株式会社 Copper foil on thin-film for integrated circuit chip, plasma displaying device or high-efficient printing circuit board
CN101076885A (en) * 2004-12-22 2007-11-21 新日铁化学株式会社 Stacked body for cof substrate, method for manufacturing such stacked body for cof substrate, and cof film carrier tape formed by using such stacked body for cof substrate
US20080251946A1 (en) * 2004-03-30 2008-10-16 Toshiharu Seko Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
CN101932629A (en) * 2008-02-05 2010-12-29 E.I.内穆尔杜邦公司 Highly adhesive polyimide copper clad laminate and method of making the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1491073A (en) * 2002-09-02 2004-04-21 古河电路铜箔株式会社 Copper foil on thin-film for integrated circuit chip, plasma displaying device or high-efficient printing circuit board
US20080251946A1 (en) * 2004-03-30 2008-10-16 Toshiharu Seko Semiconductor apparatus, manufacturing method thereof, semiconductor module apparatus using semiconductor apparatus, and wire substrate for semiconductor apparatus
CN101076885A (en) * 2004-12-22 2007-11-21 新日铁化学株式会社 Stacked body for cof substrate, method for manufacturing such stacked body for cof substrate, and cof film carrier tape formed by using such stacked body for cof substrate
CN101932629A (en) * 2008-02-05 2010-12-29 E.I.内穆尔杜邦公司 Highly adhesive polyimide copper clad laminate and method of making the same

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Application publication date: 20200306