CN114446940A - Mini LED preparation method and Mini LED - Google Patents
Mini LED preparation method and Mini LED Download PDFInfo
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- CN114446940A CN114446940A CN202111672354.7A CN202111672354A CN114446940A CN 114446940 A CN114446940 A CN 114446940A CN 202111672354 A CN202111672354 A CN 202111672354A CN 114446940 A CN114446940 A CN 114446940A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 135
- 229910052751 metal Inorganic materials 0.000 claims abstract description 135
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000011521 glass Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
- 229910000679 solder Inorganic materials 0.000 claims abstract description 25
- 238000003466 welding Methods 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 238000005476 soldering Methods 0.000 claims abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 230000002950 deficient Effects 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
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- 238000001035 drying Methods 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000006071 cream Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 239000002390 adhesive tape Substances 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Power Engineering (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to the technical field of electronic devices, in particular to a Mini LED preparation method, which comprises the steps of firstly carrying out pretreatment to obtain a clean glass substrate for later use; then, etching and manufacturing the Mini LED circuit board through a yellow light process to form a bonding pad, arranging solder paste serving as a welding spot in the bonding pad to position a fixed position of the chip, and transferring the chip to the corresponding position for fixing; then, forming chip electrode interconnection by using nitrogen protection or vacuum reflow soldering; and finally, detecting and repairing to finish the preparation of the Mini LED. The invention not only improves the precision of the Mini LED lamp panel, but also can improve the flatness of the Mini LED lamp panel, and reduces the reject ratio, thus having strong practicability; the first metal pattern and the second metal pattern can be selected or changed according to requirements, so that the application range of the metal pattern is expanded; the transparent adhesive tape protection film is arranged, so that the conductive substrate is not leaked, the oxidation problem is avoided, materials in the structure can be repeatedly utilized, and consumable materials and cost are saved.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a Mini LED preparation method and a Mini LED.
Background
The Mini LED is an LED device with the chip size of 50-00 mu m, and with the rapid development of the Mini LED display technology, the Mini LED display product is applied to the commercial fields of ultra-large screen high-definition display, such as monitoring and commanding, high-definition broadcasting, high-end cinema, medical diagnosis, advertisement display, conference exhibition, office display, virtual reality and the like.
However, due to the small size of the components, the fraction defective is always an unavoidable problem in the production and manufacturing process, which not only affects the production efficiency, but also causes a certain economic burden; and the preparation precision of the Mini LED is also challenged due to the small size, and is also a factor which is mainly considered in the process optimization process. Therefore, in order to adapt to the rapid development of the Mini LED, it is very important to discuss and optimize the production process.
The invention creatively designs a Mini LED preparation method combining a yellow light process etching method with a first metal layer, an insulating layer and a second metal layer, the method accurately positions the chip position, reduces the production reject ratio and improves the preparation precision so as to overcome the defects of the production process in the prior art.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a method for preparing a Mini LED, which has the advantages of simple steps, low reject ratio, high precision and economic benefit. In order to realize the purpose of the invention, the following technical scheme is adopted:
a preparation method of a Mini LED comprises the following steps:
(1) pretreating, namely providing a glass substrate, cleaning the glass substrate for 2-3 times by using distilled water and/or ethanol, drying the glass substrate at 60-80 ℃, and then carrying out plasma treatment to obtain a clean glass substrate for later use;
(2) manufacturing a Mini LED circuit board: plating a first metal layer on the surface of the glass substrate pretreated in the step (1), and etching the first metal layer through a yellow light process to form a first metal pattern; then, arranging an insulating layer on the surface of the first metal layer, and arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process; then plating a second metal layer on the surface of the insulating layer, and etching the second metal layer through a yellow light process to form a second metal pattern so as to form a bonding pad and finish the manufacture of the glass-based Mini LED circuit board;
(3) printing solder paste: printing solder in the bonding pad on the glass-based Mini LED circuit board obtained in the step (2), wherein the solder is a tin material, and curing to form tin paste in the bonding pad to serve as a welding point;
(4) fixing the chip: transferring the chip to the corresponding welding spot in the step (3) for fixing;
(5) electrode interconnection: heating to enable the chip fixed in the step (4) to form electrode interconnection by using nitrogen protection or vacuum reflow soldering;
(6) and (3) detection and repair: and (5) inspecting the electrode formed in the step (5), and repairing the defective point to finish the preparation of the Mini LED.
Preferably, the first metal layer in step (2) is a copper and/or nickel copper layer, and the second metal layer is a copper and/or nickel copper layer.
Preferably, the yellow light process in step (2) specifically includes the following steps:
a) sputtering copper and/or nickel-copper on one surface of a glass substrate, then arranging photoresist on the front surface of the copper and/or nickel-copper layer, etching to form a first metal pattern, demolding, and stripping the photoresist to complete the etching of the first metal layer;
b) arranging an insulating layer on the surface of the first metal layer formed in the step a), arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process, and cleaning;
c) and c), sputtering copper and/or nickel copper on the surface of the insulating layer cleaned in the step b), then arranging photoresist on the front surface of the copper and/or nickel copper layer, etching to form a second metal pattern, demolding, and stripping the photoresist to finish etching of the second metal layer.
Preferably, the etching method is one of a photo etching method, a chemical etching method or an ion etching method.
Preferably, the method further comprises the steps of cutting, detecting and screening after the step c).
Preferably, the chip transfer in the step (4) adopts a die bonding transfer process.
Preferably, the method further comprises a step of spraying transparent adhesive on the surface of the electrode to form a protective film after the step (6).
In order to achieve the purpose, the invention also provides a Mini LED which is prepared by adopting the method.
Preferably, the glass substrate comprises a glass substrate, wherein a first metal layer is plated on one surface of the glass substrate, and a first metal pattern is arranged on the first metal layer; an insulating layer is arranged on the surface of the first metal layer, and an insulating layer pattern is arranged on the insulating layer; and a second metal layer is plated on the surface of the insulating layer, and a second metal pattern is arranged on the second metal layer.
Preferably, a bonding pad is formed between the second metal layers, solder paste is arranged in the bonding pad, a welding spot is arranged on the solder paste, a chip is fixed above the welding spot, and protective films are arranged on the surfaces of the second metal layers and the chip.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the Mini LED circuit board is manufactured by yellow light etching to form the bonding pad, and the solder paste is arranged in the bonding pad to be used as the welding spot for positioning the fixed position of the chip, so that the precision of the Mini LED lamp board is improved, the flatness of the Mini LED lamp board can be improved, the reject ratio is reduced, and the practicability is strong; the etched first metal pattern and the etched second metal pattern can be selected or changed according to needs, so that the application range of the Mini LED is expanded, and the functionality of the Mini LED is enhanced; the transparent adhesive protective film is arranged, so that the conductive substrate is not leaked, the existence of the oxidation problem is avoided, materials in the structure can be repeatedly utilized, consumables and cost are saved, and certain economic benefit is achieved.
Drawings
FIG. 1 is a flow chart of a method for preparing a Mini LED according to the present invention;
FIG. 2 is a flow chart of etching a pattern by a yellow light process according to the present invention;
FIG. 3 is a schematic diagram of a Mini LED according to the present invention;
in the figure, 1-glass substrate, 2-first metal layer, 3-insulating layer, 4-second metal layer, 5-first metal pattern, 6-insulating layer pattern, 7-second metal pattern, 8-tin paste, 9-welding spot, 10-chip, 11-protective film.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Detailed description of the preferred embodiment 1
Fig. 1 is a flowchart of a method for manufacturing a Mini LED according to the present invention, and referring to fig. 2, it can be seen that the present invention provides a method for manufacturing a Mini LED, which includes the following steps:
step S1: and (3) preprocessing, namely providing a glass substrate, washing the glass substrate for 2 times by using distilled water, drying the glass substrate at 60 ℃, and then performing plasma processing to obtain a clean glass substrate for later use.
Step S2: manufacturing a Mini LED circuit board: plating a first metal layer on the surface of the glass substrate pretreated in the step S1, and etching the first metal layer by a yellow light process to form a first metal pattern; then, arranging an insulating layer on the surface of the first metal layer, and arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process; and then plating a second metal layer on the surface of the insulating layer, and etching the second metal layer to form a second metal pattern through a yellow light process to form a bonding pad, thereby completing the manufacture of the glass-based Mini LED circuit board. In this embodiment, the first metal layer is a copper layer, and the second metal layer is a copper layer, and the photolithography process in this step includes the following steps:
step S201: sputtering metal copper on one surface of the glass substrate, then arranging photoresist on the front surface of the copper layer, etching to form a first metal pattern, demolding, and stripping the photoresist to complete the etching of the first metal layer; step S202: an insulating layer is arranged on the surface of the first metal layer formed in the step S201, an insulating layer pattern corresponding to the first metal pattern is arranged on the insulating layer through a yellow light process, and cleaning is carried out; step S203: and sputtering metal copper on the surface of the insulating layer cleaned in the step S202, then arranging photoresist on the front surface of the copper layer, etching to form a second metal pattern, demolding, and stripping the photoresist to finish etching of the second metal layer. Part of the second metal layer pattern forms a via through the first metal layer pattern. And then, the steps of cutting, detecting and screening are also carried out, and the etching method in the embodiment adopts a photoetching mode.
Step S3: printing solder paste: and (5) printing solder in the bonding pad on the glass-based Mini LED circuit board obtained in the step (S2), wherein the solder is tin material, curing to form tin paste in the bonding pad, and communicating the first metal layer and the second metal layer to be used as welding spots.
Step S4: fixing the chip: and transferring the chip to the corresponding welding point in the step S3 by adopting a die bonding transfer process for fixing.
Step S5: electrode interconnection: the temperature is raised using nitrogen gas shield or vacuum reflow so that the chip fixed at step S4 forms electrode interconnections.
Step S6: and (3) detection and repair: the electrode formed in step S5 is inspected, and the defective spot is repaired, completing the preparation of the Mini LED. And then, transparent adhesive is sprayed on the surface of the electrode to manufacture a protective film, so that the protective performance of the electrode is enhanced, and the service life is prolonged.
Specific example 2
Fig. 1 is a flowchart of a method for manufacturing a Mini LED according to the present invention, and referring to fig. 2, it can be seen that the present invention provides a method for manufacturing a Mini LED, which includes the following steps:
step S1: and (3) preprocessing, namely providing a glass substrate, cleaning the glass substrate for 3 times by using ethanol, drying the glass substrate at 80 ℃, and then performing plasma processing to obtain a clean glass substrate for later use.
Step S2: manufacturing a Mini LED circuit board: plating a first metal layer on the surface of the glass substrate pretreated in the step S1, and etching the first metal layer by a yellow light process to form a first metal pattern; then, arranging an insulating layer on the surface of the first metal layer, and arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process; and then plating a second metal layer on the surface of the insulating layer, and etching the second metal layer to form a second metal pattern through a yellow light process to form a bonding pad, thereby completing the manufacture of the glass-based Mini LED circuit board. In this embodiment, the first metal layer is a nickel-copper layer, and the second metal layer is a nickel-copper layer, and the photolithography process in this step includes the following steps:
step S201: sputtering nickel copper on one surface of the glass substrate, then arranging photoresist on the front surface of the nickel copper layer, etching to form a first metal pattern, demolding, and stripping the photoresist to complete the etching of the first metal layer; step S202: an insulating layer is arranged on the surface of the first metal layer formed in the step S201, an insulating layer pattern corresponding to the first metal pattern is arranged on the insulating layer through a yellow light process, and cleaning is carried out; step S203: and sputtering nickel copper on the surface of the insulating layer cleaned in the step S202, then arranging photoresist on the front surface of the nickel copper layer, etching to form a second metal pattern, demolding, and stripping the photoresist to finish etching of the second metal layer. Part of the second metal layer pattern forms a via through the first metal layer pattern. And then, cutting, detecting and screening are carried out, and the etching method in the embodiment adopts a chemical etching mode.
Step S3: printing solder paste: and (5) printing solder in the bonding pad on the glass-based Mini LED circuit board obtained in the step (S2), wherein the solder is tin material, curing to form tin paste in the bonding pad, and communicating the first metal layer and the second metal layer to be used as welding spots.
Step S4: fixing the chip: and transferring the chip to the corresponding welding point in the step S3 by adopting a die bonding transfer process for fixing.
Step S5: electrode interconnection: the temperature is raised using nitrogen gas shield or vacuum reflow so that the chip fixed at step S4 forms electrode interconnections.
Step S6: and (3) detection and repair: the electrode formed in step S5 is inspected, and the defective spot is repaired, completing the preparation of the Mini LED. And then, transparent adhesive is sprayed on the surface of the electrode to manufacture a protective film, so that the protective performance of the electrode is enhanced, and the service life is prolonged.
Specific example 3
Fig. 1 is a flowchart of a method for manufacturing a Mini LED according to the present invention, and referring to fig. 2, it can be seen that the present invention provides a method for manufacturing a Mini LED, which includes the following steps:
step S1: pretreating, providing a glass substrate, cleaning for 3 times by using distilled water and ethanol, drying at 70 ℃, and then carrying out plasma treatment to obtain a clean glass substrate for later use.
Step S2: manufacturing a Mini LED circuit board: plating a first metal layer on the surface of the glass substrate pretreated in the step S1, and etching the first metal layer by a yellow light process to form a first metal pattern; then, arranging an insulating layer on the surface of the first metal layer, and arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process; and then plating a second metal layer on the surface of the insulating layer, and etching the second metal layer to form a second metal pattern through a yellow light process to form a bonding pad, thereby completing the manufacture of the glass-based Mini LED circuit board. In this embodiment, the first metal layer is a copper layer, the second metal layer is a nickel-copper layer, and the photolithography process in this step includes the following steps:
step S201: sputtering metal copper on one surface of the glass substrate, then arranging photoresist on the front surface of the copper layer, etching to form a first metal pattern, demolding, and stripping the photoresist to complete the etching of the first metal layer; step S202: an insulating layer is arranged on the surface of the first metal layer formed in the step S201, an insulating layer pattern corresponding to the first metal pattern is arranged on the insulating layer through a yellow light process, and cleaning is carried out; step S203: and sputtering nickel copper on the surface of the insulating layer cleaned in the step S202, then arranging photoresist on the front surface of the nickel copper layer, etching to form a second metal pattern, demolding, and stripping the photoresist to finish etching of the second metal layer. Part of the second metal layer pattern forms a via through the first metal layer pattern. And then, the steps of cutting, detecting and screening are also carried out, and the etching method in the embodiment adopts an ion etching mode.
Step S3: printing solder paste: and (5) printing solder in the bonding pad on the glass-based Mini LED circuit board obtained in the step (S2), wherein the solder is tin material, curing to form tin paste in the bonding pad, and communicating the first metal layer and the second metal layer to be used as welding spots.
Step S4: fixing the chip: and transferring the chip to the corresponding welding point in the step S3 by adopting a die bonding transfer process for fixing.
Step S5: electrode interconnection: the temperature is raised using nitrogen gas shield or vacuum reflow so that the chip fixed at step S4 forms electrode interconnections.
Step S6: and (3) detection and repair: the electrode formed in step S5 is inspected, and a defective spot is repaired, completing the preparation of the Mini LED. And then, transparent adhesive is sprayed on the surface of the electrode to manufacture a protective film, so that the protective performance of the electrode is enhanced, and the service life is prolonged.
Specific example 4
A Mini LED is prepared by the method and comprises a glass substrate 1, wherein a first metal layer 2 is plated on one surface of the glass substrate 1, and a first metal pattern 5 is arranged on the first metal layer 2; an insulating layer 3 is arranged on the surface of the first metal layer 2, and an insulating layer pattern 6 is arranged on the insulating layer 3; a second metal layer 4 is plated on the surface of the insulating layer 3, and a second metal pattern 7 is formed on the second metal layer 4. In the present embodiment, a pad is formed between the second metal layers 4, a solder paste 8 is disposed in the pad, a solder joint 9 is disposed on the solder paste 8, a chip 10 is fixed thereon, and a protective film 11 is disposed on the surfaces of the second metal layers 4 and the chip 10.
According to the embodiments of the invention, the Mini LED circuit board is manufactured by yellow light etching to form the bonding pad, and the solder paste is arranged in the bonding pad to be used as the welding point for positioning the fixed position of the chip, so that the precision of the Mini LED lamp board is improved, the flatness of the Mini LED lamp board is improved, the reject ratio is reduced, and the practicability is high; the etched first metal pattern and the etched second metal pattern can be selected or changed according to needs, so that the application range of the Mini LED is expanded, and the functionality of the Mini LED is enhanced; the transparent adhesive protective film is arranged, so that the conductive substrate is not leaked, the existence of the oxidation problem is avoided, materials in the structure can be repeatedly utilized, consumables and cost are saved, and certain economic benefit is achieved.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the changes or modifications within the technical scope of the present invention are included in the scope of the present invention, and therefore, the scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A Mini LED preparation method is characterized in that: the method comprises the following steps:
(1) pretreating, namely providing a glass substrate, cleaning the glass substrate for 2-3 times by using distilled water and/or ethanol, drying the glass substrate at 60-80 ℃, and then carrying out plasma treatment to obtain a clean glass substrate for later use;
(2) manufacturing a Mini LED circuit board: plating a first metal layer on the surface of the glass substrate pretreated in the step (1), and etching the first metal layer to form a first metal pattern through a yellow light process; then, arranging an insulating layer on the surface of the first metal layer, and arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process; then plating a second metal layer on the surface of the insulating layer, and etching the second metal layer through a yellow light process to form a second metal pattern so as to form a bonding pad and finish the manufacture of the glass-based Mini LED circuit board;
(3) printing solder paste: printing solder in the bonding pad on the glass-based Mini LED circuit board obtained in the step (2), wherein the solder is a tin material, and curing to form tin paste in the bonding pad to serve as a welding point;
(4) fixing the chip: transferring the chip to the corresponding welding spot in the step (3) for fixing;
(5) electrode interconnection: heating to enable the chip fixed in the step (4) to form electrode interconnection by using nitrogen protection or vacuum reflow soldering;
(6) and (3) detection and repair: and (5) inspecting the electrode formed in the step (5), and repairing the defective point to finish the preparation of the Mini LED.
2. The method for preparing a Mini LED as claimed in claim 1, wherein: and (2) the first metal layer is a copper and/or nickel-copper layer, and the second metal layer is a copper and/or nickel-copper layer.
3. The method for preparing a Mini LED as claimed in claim 2, wherein: the yellow light process in the step (2) specifically comprises the following steps:
a) sputtering copper and/or nickel-copper on one surface of a glass substrate, then arranging photoresist on the front surface of the copper and/or nickel-copper layer, etching to form a first metal pattern, demolding, and stripping the photoresist to complete the etching of the first metal layer;
b) arranging an insulating layer on the surface of the first metal layer formed in the step a), arranging an insulating layer pattern corresponding to the first metal pattern on the insulating layer through a yellow light process, and cleaning;
c) and c), sputtering copper and/or nickel copper on the surface of the insulating layer cleaned in the step b), then arranging photoresist on the front surface of the copper and/or nickel copper layer, etching to form a second metal pattern, demolding, and stripping the photoresist to finish etching of the second metal layer.
4. The method for preparing a Mini LED according to claim 3, wherein: the etching method is one of a photoetching mode, a chemical etching mode or an ion etching mode.
5. The method for preparing a Mini LED according to claim 3, wherein: the step c) is followed by the steps of cutting, detecting and screening.
6. The method for preparing a Mini LED according to claim 1, wherein: and (4) adopting a die bonding transfer process for transferring the chip.
7. The method for preparing a Mini LED as claimed in claim 1, wherein: and (4) spraying transparent adhesive on the surface of the electrode to manufacture a protective film after the step (6).
8. A Mini LED, characterized by: prepared by the method of any one of claims 1 to 7.
9. The Mini LED of claim 8, wherein: the glass substrate comprises a glass substrate (1), wherein a first metal layer (2) is plated on one surface of the glass substrate (1), and a first metal pattern (5) is arranged on the first metal layer (2); an insulating layer (3) is arranged on the surface of the first metal layer (2), and an insulating layer pattern (6) is arranged on the insulating layer (3); a second metal layer (4) is plated on the surface of the insulating layer (3), and a second metal pattern (7) is arranged on the second metal layer (4).
10. The Mini LED of claim 9, wherein: form the pad between second metal level (4), set up tin cream (8) in the pad, be equipped with solder joint (9) on tin cream (8), solder joint (9) top is fixed with chip (10), just the surface of second metal level (4) and chip (10) is equipped with protection film (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111672354.7A CN114446940A (en) | 2021-12-31 | 2021-12-31 | Mini LED preparation method and Mini LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111672354.7A CN114446940A (en) | 2021-12-31 | 2021-12-31 | Mini LED preparation method and Mini LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114446940A true CN114446940A (en) | 2022-05-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111672354.7A Pending CN114446940A (en) | 2021-12-31 | 2021-12-31 | Mini LED preparation method and Mini LED |
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| CN (1) | CN114446940A (en) |
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2021
- 2021-12-31 CN CN202111672354.7A patent/CN114446940A/en active Pending
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