CN110864805A - Ultra-wideband spectrum detection device and method - Google Patents
Ultra-wideband spectrum detection device and method Download PDFInfo
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Abstract
The invention provides an ultra-wideband spectrum detection device and a method, wherein the device comprises a substrate and at least one detection unit arranged on the substrate; the detection unit comprises a channel material layer arranged on the substrate and two metal electrodes arranged on the channel material layer at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer in the longitudinal direction respectively, and the metal electrodes and the channel material layer form a heterojunction. The invention can realize ultra-wideband spectrum detection of ultraviolet to terahertz wave bands, and has high sensitivity and high loudness speed.
Description
Technical Field
The invention relates to the technical field of photoelectron, in particular to an ultra-wideband spectrum detection device and method based on HfTe 5.
Background
At present, photoelectric detectors are widely applied in the fields of communication, security protection, spectral analysis, space exploration, biological medicine and the like. However, because no photosensitive material sensitive to ultra-wide spectrum including terahertz light at room temperature is found, the application of the conventional photoelectric detector in both the ultra-wide spectrum detection technology and the room-temperature terahertz detection technology still has great difficulty.
For example, photodetectors based on WoS2, WSe2, and Bi single crystals, etc., can only detect light within a certain narrow band, subject to the physical and chemical properties of the photosensitive cells and the characteristic band structure. For example, the detectors available on the market can only be used for detecting light in ultraviolet, visible, near infrared and intermediate infrared bands, and efficient, portable and low-cost multi-channel detectors and technologies are still very lacking.
In the current photoelectron technology field, graphene is considered as a candidate material for realizing ultra-wide spectrum detection due to a gapless energy band structure, however, the absorption of light is only 2.3% due to a single-layer graphene structure, so that the sensitivity of a graphene photoelectric detector is only a few mA/W. In order to improve the sensitivity of the graphene-based photoelectric detector, people continuously research and develop the photoelectric detector based on the graphene field effect tube, although the sensitivity of the detector is improved by the graphene quantum dot photoelectric detector, most of the field effect tube can only work below 1THz, and a low-temperature system is sometimes required to be equipped for use, so that the applicable environment of the field effect tube is greatly limited.
In addition, when the non-refrigeration type semiconductor photoelectric detector detects middle, far infrared and terahertz wave bands, huge thermal excitation at room temperature covers optical excitation signals, so that the detector cannot detect the optical excitation signals and cannot normally work. Therefore, detectors operating in the mid-infrared, far-infrared, or terahertz bands typically require low temperature refrigeration conditions to suppress noise, thereby improving photoresponse sensitivity. The harsh refrigeration condition not only complicates the detection system and increases the volume, but also causes inconvenience in the use process and greatly increases the equipment cost.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide an ultra-wideband spectrum detection apparatus and method, so as to solve the problems that the existing photoelectric detection apparatus has a narrow test light source band, is limited by external temperature conditions, and affects detection accuracy and speed.
The invention provides an ultra-wideband spectrum detection device, which comprises a substrate and at least one detection unit arranged on the substrate; the detection unit comprises a channel material layer arranged on the substrate and two metal electrodes arranged on the channel material layer at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer in the longitudinal direction respectively, and the metal electrodes and the channel material layer form a heterojunction.
In addition, the preferable scheme is that an avoidance groove is arranged on the substrate, and the detection unit is suspended and erected on the avoidance groove; the cross-section of the substrate in the longitudinal direction of the detection unit is a U-shaped structure.
In addition, preferably, the two metal electrodes are made of different materials and/or have different contact areas with the trench material layer and/or have different thicknesses.
In addition, preferably, a gate dielectric layer is deposited on one side of the channel material layer away from the substrate, and a metal gate is deposited in the middle of the gate dielectric layer in the channel material layer; the metal grid electrode and the source electrode are respectively connected with an external antenna, and the drain electrode is led out through a metal wire.
In addition, preferably, the thickness of the gate dielectric layer is greater than the thickness of the two metal electrodes, and the gate dielectric layer covers the two metal electrodes.
In addition, preferably, a gate dielectric layer is deposited on one side of the channel material layer away from the substrate, and a metal gate is deposited in the middle of the gate dielectric layer in the channel material layer; the metal grid electrode and the drain electrode are respectively connected with an external antenna, and the source electrode is led out through a metal wire.
In addition, the preferred scheme is that the detection units are arranged on the substrate in a regular linear array or planar array.
In addition, preferably, a light shielding layer is further provided; the shading layer is arranged on the metal electrode on one side of the detection unit, which is far away from the light source to be detected.
In addition, the channel material layer is preferably a crystalline HfTe5 layer; the metal electrode is one or the combination of at least two of gold, silver, platinum, indium, tin and chromium.
According to another aspect of the invention, an ultra-wideband spectrum detection method is provided, which uses the above ultra-wideband spectrum detection device to detect a light source to be detected.
By utilizing the ultra-wideband spectrum detection device and the method, the device is simple to prepare, excellent in performance, low in cost and wide in application range, and has the characteristics of ultra-wideband detection frequency band (from ultraviolet to terahertz), quick detection response time, low energy consumption, low detection temperature requirement and the like.
To the accomplishment of the foregoing and related ends, one or more aspects of the invention comprise the features hereinafter fully described. The following description and the annexed drawings set forth in detail certain illustrative aspects of the invention. These aspects are indicative, however, of but a few of the various ways in which the principles of the invention may be employed. Further, the present invention is intended to include all such aspects and their equivalents.
Drawings
Other objects and results of the present invention will become more apparent and more readily appreciated as the same becomes better understood by reference to the following description taken in conjunction with the accompanying drawings. In the drawings:
fig. 1 is a schematic structural diagram of an ultra-wideband spectrum detection apparatus according to a first embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an ultra-wideband spectrum detection apparatus according to a second embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an ultra-wideband spectrum detection apparatus according to a third embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an ultra-wideband spectrum detection apparatus according to a fourth embodiment of the present invention;
FIG. 5 is a schematic diagram of an antenna structure of the ultra-wideband spectrum detection device of FIG. 4;
FIG. 6 is a schematic structural diagram of an ultra-wideband spectrum detection apparatus according to a fifth embodiment of the present invention;
FIG. 7 is a schematic structural diagram of an ultra-wideband spectrum detection device according to a sixth embodiment of the present invention;
fig. 8 is a schematic structural diagram of an ultra-wideband spectrum detection device according to a seventh embodiment of the invention.
Wherein the reference numerals include: the device comprises a channel material layer 1, a metal electrode 2, a metal electrode 3, a substrate 4, a light source to be detected 5, a U-shaped substrate 6, a metal grid 7, a grid dielectric layer 8, an antenna 9, an antenna 10, a metal wire 11 and a shading layer 12.
The same reference numbers in all figures indicate similar or corresponding features or functions.
Detailed Description
In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It may be evident, however, that such embodiment(s) may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing one or more embodiments.
In the description of the present invention, it is to be understood that the orientations or positional relationships indicated by the "longitudinal direction", "both ends", "center", "front face", etc. are based on the orientations or positional relationships shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In order to solve the problems of the application of the existing photoelectric detector in the two aspects of the ultra-wide spectrum detection technology and the room temperature terahertz detection technology, the invention provides an ultra-wide spectrum detection device, which comprises a substrate and at least one detection unit arranged on the substrate; the detection unit comprises a channel material layer arranged on the substrate and two metal electrodes arranged on the channel material layer at intervals; the two metal electrodes comprise a source electrode and a drain electrode which are in ohmic contact with two ends of the channel material layer in the longitudinal direction respectively, the metal electrodes and the channel material layer form a heterojunction, when the device is exposed to light, the channel material layer in the detection unit can generate a temperature gradient, so that a potential difference is generated at two ends of the channel material layer, and the potential difference can be acquired through an external detection circuit, so that broadband spectrum detection is realized.
For a detailed description of the ultra-wideband spectrum sensing device of the present invention, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 shows a schematic structure of an ultra-wideband spectrum detection device according to a first embodiment of the invention.
As shown in fig. 1, the ultra-wideband spectrum detection device in the first embodiment of the present invention includes a substrate 4 and a detection unit disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes (comprising a metal electrode 2 and a metal electrode 3, the same applies below) arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
The channel material layer 1 can be set as a crystal HfTe5 layer, the shape of the channel material layer 1 can be designed into any shape according to actual requirements, and the crystal HfTe5 layer absorbs incident light (the light source 5 to be detected, the same below) and converts the incident light power into an electric signal. The channel material layer 1 adopts crystal HfTe5, and the working wave band can cover ultra-wide wave bands from ultraviolet, visible, infrared and terahertz.
Furthermore, two metal electrodes arranged at two ends of the channel material 1 in the longitudinal direction form good ohmic contact with the channel material 1, and form a heterojunction of 'HfTe 5-metal', the material of the metal electrodes includes one or a combination of several of gold, silver, platinum, indium, tin, chromium, etc., and the metal electrodes can be arranged on the channel material layer 1 by a coating process evaporation or sputtering process.
The substrate 4 in this embodiment is an insulating substrate, wherein the substrate 4 is a thin sheet formed of a pyroelectric material suitable for providing a stable mechanical support for the entire ultra-wideband spectrum detection device, and the material of the substrate 4 includes, but is not limited to, sapphire, Si/SiO2, quartz, mica, and the like.
In the working process of the ultra-wideband spectrum detection device in the first embodiment, the substrate 4 carrying the detection unit is firstly fixed on a reliable optical translation table, so that the front surface of the detection unit faces the light source 5 to be detected. Then, the light source 5 to be detected is condensed on the "HfTe 5-metal" heterojunction at either one of the two ends of the channel material layer 1 through the condensed optical path. Under the illumination condition, the temperature at one end of the channel material layer 1 is obviously increased, and the photoelectric effect is generated, so that effective photoelectric voltage is generated within hundreds of microseconds, and the detection of ultra-wideband spectrum is realized.
Fig. 2 shows a schematic structure of an ultra-wideband spectrum detection device according to a second embodiment of the invention.
As shown in fig. 2, the ultra-wideband spectrum detection device in the second embodiment of the present invention includes a substrate 4 and a detection unit disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
The channel material layer 1 can be set as a crystal HfTe5 layer, the outer shape of the channel material layer 1 can be designed into any shape according to actual requirements, and the crystal HfTe5 layer absorbs incident light and converts the incident light power into an electric signal. The channel material layer 1 adopts crystal HfTe5, and the working wave band can cover ultra-wide wave bands from ultraviolet, visible, infrared and terahertz.
Furthermore, two metal electrodes arranged at two ends of the channel material 1 in the longitudinal direction form good ohmic contact with the channel material 1, and form a heterojunction of 'HfTe 5-metal', the material of the metal electrodes includes one or a combination of several of gold, silver, platinum, indium, tin, chromium, etc., and the metal electrodes can be arranged on the channel material layer 1 by a coating process evaporation or sputtering process.
The substrate 4 in this embodiment is an insulating substrate, wherein the substrate 4 is a thin sheet formed of a pyroelectric material suitable for providing a stable mechanical support for the entire ultra-wideband spectrum detection device, and the material of the substrate 4 includes, but is not limited to, sapphire, Si/SiO2, quartz, mica, and the like. In addition, still be provided with on basement 4 and dodge the groove, the unsettled groove of dodging of detection unit erects on dodging the groove, and basement 4 is the U-shaped structure in the cross-section along detection unit's longitudinal direction, and U-shaped basement 6 provides mechanical support and guarantees that the middle part of channel material layer 1 is unsettled for whole detection device promptly to realize the spectral detection effect of high accuracy.
In the working process of the ultra-wideband spectrum detection device in the second embodiment, the substrate 4 carrying the detection unit is firstly fixed on a reliable optical translation table, so that the front surface of the detection unit faces the light source 5 to be detected. Then, the light source 5 to be detected is condensed on the "HfTe 5-metal" heterojunction at either one of the two ends of the channel material layer 1 through the condensed optical path. Under the illumination condition, the temperature at one end of the channel material layer 1 is obviously increased, and the photoelectric effect is generated, so that effective photoelectric voltage is generated within hundreds of microseconds, and the detection of ultra-wideband spectrum is realized.
Fig. 3 shows a schematic structure of an ultra-wideband spectrum detection device according to a third embodiment of the invention.
As shown in fig. 3, the ultra-wideband spectrum detection device in the third embodiment of the present invention includes a substrate 4 and a detection unit disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
The channel material layer 1 can be set as a crystal HfTe5 layer, the outer shape of the channel material layer 1 can be designed into any shape according to actual requirements, and the crystal HfTe5 layer absorbs incident light and converts the incident light power into an electric signal. The channel material layer 1 adopts crystal HfTe5, and the working wave band can cover ultra-wide wave bands from ultraviolet, visible, infrared and terahertz.
Furthermore, two metal electrodes arranged at two ends of the channel material 1 in the longitudinal direction form good ohmic contact with the channel material 1, and form a heterojunction of 'HfTe 5-metal', the material of the metal electrodes includes one or a combination of several of gold, silver, platinum, indium, tin, chromium, etc., and the metal electrodes can be arranged on the channel material layer 1 by a coating process evaporation or sputtering process.
The substrate 4 in this embodiment is an insulating substrate, wherein the substrate 4 is a thin sheet formed of a pyroelectric material suitable for providing a stable mechanical support for the entire ultra-wideband spectrum detection device, and the material of the substrate 4 includes, but is not limited to, sapphire, Si/SiO2, quartz, mica, and the like.
In addition, the two metal electrodes are made of different materials and/or have different contact areas with the trench material layer and/or have different thicknesses, which includes four cases, and the description is omitted here. In the working process of the ultra-wideband spectrum detection device in the third embodiment, the substrate 4 carrying the detection unit is firstly fixed on a reliable optical translation table, so that the front surface of the detection unit faces the light source 5 to be detected. Then, the light source 5 to be detected is condensed on the "HfTe 5-metal" heterojunction at either one of the two ends of the channel material layer 1 through the condensed optical path. Under the illumination condition, the temperature at one end of the channel material layer 1 is obviously increased, and the photoelectric effect is generated, so that effective photoelectric voltage is generated within hundreds of microseconds, and the detection of ultra-wideband spectrum is realized.
FIG. 4 shows a schematic structure of an ultra-wideband spectrum detection apparatus according to a fourth embodiment of the invention; fig. 5 shows a schematic of the structure of the antenna of fig. 4.
As shown in fig. 4 and 5, the ultra-wideband spectrum detection device in the fourth embodiment of the present invention includes a substrate 4 and a detection unit disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
The channel material layer 1 can be set as a crystal HfTe5 layer, the outer shape of the channel material layer 1 can be designed into any shape according to actual requirements, and the crystal HfTe5 layer absorbs incident light and converts the incident light power into an electric signal. The channel material layer 1 adopts crystal HfTe5, and the working wave band can cover ultra-wide wave bands from ultraviolet, visible, infrared and terahertz.
Further, two metal electrodes provided at both ends of the channel material 1 in the longitudinal direction form good ohmic contacts with the channel material 1, and form a "HfTe 5-metal" heterojunction.
The substrate 4 in this embodiment is an insulating substrate, wherein the substrate 4 is a thin sheet formed of a pyroelectric material suitable for providing a stable mechanical support for the entire ultra-wideband spectrum detection device, and the material of the substrate 4 includes, but is not limited to, sapphire, Si/SiO2, quartz, mica, and the like.
In addition, in the embodiment, a gate dielectric layer 8 is further deposited on the side of the channel material layer 1 away from the substrate 4, the material of the dielectric layer 7 includes, but is not limited to, SiO2, Al2O3, hexagonal boron nitride, and the like, and a metal gate 7 is deposited at the middle position of the gate dielectric layer 8 in the channel material layer 1; the metal grid 7 and the source electrode are respectively connected with an external antenna 9 and an antenna 10, the antenna (including the antenna 9 and the antenna 10, the same below) comprises a butterfly antenna, a spiral antenna, a log periodic antenna and the like, and the drain electrode is led out through a metal wire 11; the material of the metal electrode and the material of the antenna are made of one or a combination of a plurality of metal materials with good performance, such as gold, silver, platinum, indium, tin, chromium and the like, and the metal electrode can be arranged on the channel material layer 1 through a coating process evaporation or sputtering process.
In addition, the thickness of the gate dielectric layer 8 may be set to be greater than the thickness of the two metal electrodes, the gate dielectric layer 8 covers the two metal electrodes, and the side edges of the two metal electrodes may be exposed, as shown in fig. 4.
In the working process of the ultra-wideband spectrum detection device in the fourth embodiment, the light size spot of the incident light is much larger than the size of the detection unit, and the substrate 4 carrying the detection unit is fixed on a reliable optical translation table, so that the front surface of the detection unit faces the light source 5 to be detected. Then, the light source 5 to be detected is condensed on the "HfTe 5-metal" heterojunction at either one of the two ends of the channel material layer 1 through the condensed optical path. Under the illumination condition, due to the coupling effect of the antenna, the energy absorbed by the material between the source electrode and the grid electrode is larger than the energy absorbed by the material between the grid electrode and the drain electrode, the temperature difference is generated at the two ends of the detection unit, the photoelectric effect is generated, and therefore effective photoelectric voltage is generated within hundreds of microseconds, and the detection of the ultra-wideband spectrum is realized.
It should be noted that in some other embodiments of the present disclosure, the detection may be achieved by coupling the antenna to make the sample temperature between the drain and the gate higher than the sample temperature between the gate and the source. For example, a gate dielectric layer 8 is deposited on one side of the channel material layer 1 away from the substrate 4, and a metal gate 7 is deposited at the middle position of the gate dielectric layer 8 in the channel material layer 1; the metal grid 7 and the drain electrode are respectively connected with an external antenna, and the source electrode is led out through a metal wire 11.
Fig. 6 shows a schematic structure of an ultra-wideband spectrum detection device according to a fifth embodiment of the invention.
As shown in fig. 6, the ultra-wideband spectrum detection device in the fifth embodiment of the present invention includes a substrate 4 and a plurality of detection units disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
Specifically, each detection unit is arranged on the substrate 4 in a regular linear array, one end of each detection unit in the longitudinal direction is aligned with the edge portion of the substrate 4, incident light is gathered at one end of each detection unit in the longitudinal direction on the edge of the substrate 4 through a gathering light path, a temperature difference is generated at two ends of each detection unit, a photothermal and photoelectric effect is generated, and therefore effective photovoltage is generated within hundreds of microseconds.
It should be noted that the structure of the detection unit in this embodiment may adopt any one of the structures in the first to fourth embodiments, and details are not described here.
Fig. 7 shows a schematic structure of an ultra-wideband spectrum detection device according to a sixth embodiment of the invention.
As shown in fig. 7, the ultra-wideband spectrum detection device in the sixth embodiment of the present invention includes a substrate 4 and a plurality of detection units disposed on the substrate 4; each detection unit comprises a channel material layer arranged on the substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
Specifically, a light shielding layer 12 is also provided; the shading layer 12 is arranged on the metal electrode on one side of the detection unit far away from the light source 5 to be detected, and adverse effects of the light spot size on the detection performance are avoided through the shading layer 12.
It should be noted that, although a plurality of detection units arranged in a linear array are shown in this embodiment, it should be understood by those skilled in the art that in some other embodiments of the present invention, only one such detection unit may be provided, or a plurality of such detection units arranged in an area array may also be provided.
The structure of the detection unit in this embodiment may adopt any one of the first to fourth embodiments, and details are not repeated here.
Fig. 8 shows a schematic structure of an ultra-wideband spectrum detection device according to a seventh embodiment of the invention.
As shown in fig. 8, the ultra-wideband spectrum detection device in the seventh embodiment of the present invention includes a substrate 4 and a plurality of detection units disposed on the substrate 4; each detection unit comprises a channel material layer 1 arranged on a substrate 4 and two metal electrodes arranged on the channel material layer 1 at intervals; the two metal electrodes comprise a source electrode and a drain electrode; the two metal electrodes are in ohmic contact with two ends of the channel material layer 1 in the longitudinal direction respectively, and the metal electrodes and the channel material layer 1 form a heterojunction.
Specifically, each detection unit is arranged on the substrate 4 in a regular area array mode, the metal electrode on one side, away from the light source 5 to be detected, of each detection unit is provided with the light shielding layer 12, incident light is gathered at one end, away from the light shielding layer 12, of each detection unit through the convergence light path, temperature difference is generated at two ends of each detection unit, the photothermal and photoelectric effect is generated, and therefore effective photovoltaic voltage is generated within hundreds of microseconds.
It should be noted that, although a plurality of detection units arranged in an area array are shown in this embodiment, those skilled in the art should understand that in some other embodiments of the present invention, only one such detection unit may be provided.
The structure of the detection unit in this embodiment may adopt any one of the first to fourth embodiments, and details are not repeated here.
It should be noted that, although the ultra-wideband spectrum detection device in the above embodiments implements detection by the photothermal effect, it should be understood by those skilled in the art that in other embodiments of the present disclosure, the radiative heat effect and the like may also be employed.
Corresponding to the ultra-wideband spectrum detection device, the invention also provides an ultra-wideband spectrum detection method, which utilizes the ultra-wideband spectrum detection device to detect the light source to be detected.
When the spot size of the light source to be detected is smaller than the longitudinal length of the HfTe5 crystal, the detection unit can adopt two electrodes of a source electrode and a drain electrode. When the metal junction at one end of the detection unit, namely the HfTe 5-metal electrode at one end of the detection unit is exposed to the light collected through the light path, the temperature of the material at the end is increased and is higher than that at the other end, so that a temperature difference is generated at two ends of the detection unit, a corresponding potential difference is generated at the two ends, and the potential difference is amplified and read by the detection circuit, namely the ultra-wideband light detection is realized.
In some embodiments, the light spot size is much larger than the longitudinal length of the HfTe5 crystal, in this case, the detection unit may employ three poles of source, drain and gate, the source and gate are respectively connected to the antenna, and the drain is led out through a thin metal wire. The whole detection unit is exposed to the illumination gathered through the light path, and under the coupling action of the antenna, the illumination absorbed by the crystal sample between the source electrode and the grid electrode is more than the illumination absorbed by the sample between the grid electrode and the drain electrode, so that the temperature of the sample in the area between the source electrode and the grid electrode is higher than the temperature of the sample between the grid electrode and the drain electrode, the temperature difference generates corresponding potential difference, and the potential difference is amplified and read by the detection circuit, namely, the ultra-wideband light detection is realized.
It should be noted, however, that in other embodiments of the present invention, the detection may be achieved by coupling the antenna such that the sample temperature between the drain and the gate is higher than the sample temperature between the gate and the source.
In some embodiments, the size of the light spot is much larger than the longitudinal size of the HfTe5 crystal, in this case, the detection unit employs three poles of source, drain and gate, and is respectively connected with a three-terminal antenna to form an asymmetric antenna structure. The entire detection unit is exposed to the illumination collected via the optical path. Through the antenna coupling effect, the light absorbed by the crystal sample between the source electrode and the grid electrode is more than the light absorbed by the sample between the grid electrode and the drain electrode, so that the temperature of the sample in the area between the source electrode and the grid electrode is higher than the temperature of the sample between the grid electrode and the drain electrode, the temperature difference generates corresponding potential difference, and the potential difference is amplified and read by the detection circuit, namely, the ultra-wideband light detection is realized.
It should be noted, however, that in other embodiments of the present invention, the detection may be achieved by coupling the antenna such that the sample temperature between the drain and the gate is higher than the sample temperature between the gate and the source.
In some embodiments, the spot size is much larger than the longitudinal size of the HfTe5 crystal, in which case the detecting unit has source and drain poles, and the source and drain electrodes are made of different metal electrodes (including different materials, different sizes, etc.) and are respectively connected to the antenna. The whole detection unit is exposed to light collected through a light path, Seebeck (Seebeck effect, also called as first thermoelectric effect, which is a thermoelectric phenomenon that the voltage difference between two substances is caused by the temperature difference of two different electric conductors or semiconductors) coefficients of materials at two ends are different due to different doping of different metals at the two ends to a sample, under the condition of light, temperature difference is generated at the two ends, the temperature difference generates corresponding potential difference, and the potential difference is amplified and read by a detection circuit, namely, ultra-wideband light detection is realized.
According to the ultra-wideband spectrum detection device and method, the crystal material HfTe5 and the metal electrode form a metal-HfTe 5-metal device structure with a simple structure, when the device is exposed to light, the crystal material in the device channel generates a temperature gradient, so that a potential difference is generated at two ends of a crystal sample, the potential difference can be amplified by an external detection circuit and then read out, ultra-wideband optical detection is realized, the detection spectrum band is wide, the response speed is high, the detection precision is high, the energy consumption is low, the device can work at room temperature, the performance is excellent, the cost is low, and the device and method have wide application prospects in practical life.
An ultra-wideband spectroscopy detection apparatus and method according to the invention is described above by way of example with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that various modifications may be made to the ultra-wideband spectrum sensing apparatus and method of the present invention described above without departing from the scope of the invention. Therefore, the scope of the present invention should be determined by the contents of the appended claims.
Claims (10)
1. An ultra-wideband spectroscopy detection apparatus, the apparatus comprising a substrate and at least one detection unit disposed on the substrate; wherein the content of the first and second substances,
the detection unit comprises a channel material layer arranged on the substrate and two metal electrodes arranged on the channel material layer at intervals;
the two metal electrodes comprise a source electrode and a drain electrode;
the two metal electrodes are in ohmic contact with two ends of the channel material layer in the longitudinal direction respectively, and the metal electrodes and the channel material layer form a heterojunction.
2. The ultra-wideband spectroscopy apparatus of claim 1,
an avoidance groove is formed in the substrate, and the detection unit is erected on the avoidance groove in a hanging mode;
the cross section of the substrate in the longitudinal direction of the detection unit is in a U-shaped structure.
3. The ultra-wideband spectroscopy apparatus of claim 1,
the two metal electrodes are made of different materials and/or the contact areas of the two metal electrodes and the groove material layer are different and/or the thicknesses of the two metal electrodes are different.
4. The ultra-wideband spectroscopy apparatus of claim 1,
depositing a gate dielectric layer on one side of the channel material layer far away from the substrate, and depositing a metal gate in the middle of the gate dielectric layer on the channel material layer;
the metal grid electrode and the source electrode are respectively connected with an external antenna, and the drain electrode is led out through a metal wire.
5. The ultra-wideband spectroscopy apparatus of claim 4,
the thickness of the gate dielectric layer is larger than that of the two metal electrodes, and the gate dielectric layer covers the two metal electrodes.
6. The ultra-wideband spectroscopy apparatus of claim 1,
depositing a gate dielectric layer on one side of the channel material layer far away from the substrate, and depositing a metal gate in the middle of the gate dielectric layer on the channel material layer;
the metal grid and the drain electrode are respectively connected with an external antenna, and the source electrode is led out through a metal wire.
7. The ultra-wideband spectroscopy apparatus of claim 1,
the detection units are arranged on the substrate in a regular linear array or an area array.
8. The ultra-wideband spectrum sensing device of claim 1, further provided with a light-shielding layer; wherein the content of the first and second substances,
the shading layer is arranged on the metal electrode on one side of the detection unit, which is far away from the light source to be detected.
9. The ultra-wideband spectroscopy detection apparatus of any one of claims 1 to 8,
the channel material layer is a crystal HfTe5 layer;
the metal electrode is one or the combination of at least two of gold, silver, platinum, indium, tin and chromium.
10. A method for detecting ultra-wideband spectrum, characterized in that a light source to be detected is detected by the ultra-wideband spectrum detection device as claimed in any one of claims 1 to 9.
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