CN106960892A - Graphene ribbon terahertz sensor - Google Patents
Graphene ribbon terahertz sensor Download PDFInfo
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- CN106960892A CN106960892A CN201710283429.XA CN201710283429A CN106960892A CN 106960892 A CN106960892 A CN 106960892A CN 201710283429 A CN201710283429 A CN 201710283429A CN 106960892 A CN106960892 A CN 106960892A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010931 gold Substances 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
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- 238000005516 engineering process Methods 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
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Abstract
This application provides a kind of graphene ribbon Terahertz sensor, including the graphene ribbon connected between source-drain electrode, by forming the metal level on groove and groove on a silicon substrate, graphene layer is removed into the part contacted with metal level by metal assisted oxidation method, form graphene ribbon, Terahertz is detected using graphene ribbon distinctive electric property, efficient graphene ribbon Terahertz sensor is realized.
Description
Technical field
The present invention relates to a kind of sensor, and in particular to a kind of graphene ribbon Terahertz sensor.
Background technology
Terahertz (Tera Hertz, THz) is one of vibration frequency unit, also known as terahertz, or terahertz, Terahertz
It is a kind of radiation source that is new, having many particular advantages；Terahertz Technology is a very important intersection Disciplinary Frontiers, to skill
Art innovation, the national economic development and national security provide a very tempting opportunity.Early stage Terahertz is in different fields
There are different titles, be referred to as far infrared in optical field, and in person in electronics, be then called submillimeter wave, ultramicrowave etc..
Before 1980s mid-term, the infrared and microwave technology development of terahertz wave band both sides is relatively ripe, but people
It is still very limited to the understanding of terahertz wave band, form so-called " THz Gap ".
2004, THz science and technology was chosen as one of " the ten big technologies for changing future world " by U.S. government, and Japan is in 2005
On January 8, is even more that THz technologies are classified as first of " the national big key strategy target of pillar ten ", is researched and developed by national efforts.I
It is influential in THz research fields that government of state has specially held multidigit in " Fragrance Hill scientific and technical conference ", host country in November, 2005
Academician specially discusses the developing direction of China's THz causes, and has formulated the development plan of China's THz technologies.The current country is
The correlative study in You Duojia research institutions development Terahertz field, wherein Capital Normal University, are to start with relatively early, put into larger
One, and in terms of drugs and explosive tera-hertz spectra, imaging and identification, using Terahertz to nonpolar space material inside
Defect carries out being made that many ground-breaking work in terms of Non-Destructive Testing, simultaneously because Terahertz ray is in terms of safety inspection
Unique advantage, Capital Normal University's Terahertz laboratory, which just concentrates strength on researching and developing, can be used in the safety check prototype of outdoor scene test and sets
It is standby.In addition, many countries and regions governments such as the U.S., Europe, Asia, Australia, mechanism, enterprise, university and research institution
Put into one after another among THz research and development upsurge.
As one section of electromagnetic spectrum resource of the mankind's not yet large-scale use, THz wave has extremely abundant electromagnetic wave
Interaction effect between material, not only in basic research field, and in safety check imaging, radar, communication, astronomy, air
Many technical fields such as observation and biomedicine have broad application prospects.At present, the miniature solid-state Terahertz light source of room temperature
Not yet ripe with detector technologies, numerous terahertz sources-detection applications are also in principle demonstration and conceptual phase.Room temperature, height
Fast, highly sensitive solid-state terahertz detector technology is one of important directions of Terahertz core devices research, this technology
The heterodyne system Terahertz receiver skill of large-scale Terahertz focal-plane imaging array and hypersensitivity can be further developed into
Art, core devices and part are provided for application technologies such as the terahertz imaging, communications of development China.
The content of the invention
The present invention provide a kind of new structure based on graphene ribbon Terahertz sensor, it can utilize graphene ribbon
Unique electrical characteristic realizes effective detection to Terahertz.
The technical solution adopted in the present invention is：A kind of graphene ribbon Terahertz sensor, it is characterised in that include：
Silicon substrate, the silicon substrate forms on horizontally-parallel groove, each face of the groove and passes through surface oxidation
One layer of oxide skin(coating) is formed, metal level is formed on the surface of the oxide skin(coating)；
Remove the metal level at the groove two ends；
Graphene layer is transferred on silicon substrate, by metal assisted oxidation by the graphite of adjacent groove upper surface
Alkene oxidation removal, forms graphene ribbon；
Source electrode and drain electrode are formed at the groove two ends for eliminating metal level where graphene layer；
Silver layer is formed at the back side of silicon substrate；
The upper surface width of the horizontally-parallel groove is identical with basal surface width, and the length of the horizontally-parallel groove is
More than 6 times of width, the aspect ratio of the graphene ribbon is more than 6.
Further, the thickness of the oxide layer is the 1/4-1/8 of surface groove depth.
Further, the metal of the metal level is gold, silver or copper.
Further, periodic grooves are also formed at the back side of silicon substrate, the groove of silicon substrate back is filled with silver, and
With same material one layer of silver layer of formation after the completion of filling.
Further, the horizontally-parallel groove and source-drain electrode are also removed by ion etching process after forming graphene ribbon
Graphene layer outside region.
Further, the periodicity of the horizontally-parallel groove is more than 5.
Further, the horizontally-parallel groove is completely covered after the graphene layer transfer.
Further, the source-drain electrode forming position abuts the two ends of the horizontally-parallel groove.
The beneficial effects of the present invention are：This application provides a kind of graphene ribbon Terahertz sensor, including source-drain electrode
Between the graphene ribbon that connects, by forming the metal level on groove and groove on a silicon substrate, graphene layer is passed through into metal
Assisted oxidation method removes the part contacted with metal level, forms graphene ribbon, utilizes the distinctive electric property pair of graphene ribbon
Terahertz is detected, and realizes efficient graphene ribbon Terahertz sensor.
Brief description of the drawings
Fig. 1 is the schematic top plan view of graphene ribbon Terahertz sensor of the present invention；
Fig. 2 is the structural representation in graphene ribbon Terahertz sensors A-A sections in Fig. 1；
Fig. 3 is graphene ribbon Terahertz sensor section B-B structural representation in Fig. 1.
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings and the specific embodiments.
It should be noted that in order to clearly embody concrete structure, although each layer is point in figure in the accompanying drawings
From, but this just for the sake of more intuitively showing the relation between each layer, those skilled in the art understand that the present invention
Final state.
Referring to Fig. 1, Fig. 2 and Fig. 3, the present invention provides a kind of graphene ribbon Terahertz sensor, comprising：
Silicon substrate 1, the surface of silicon substrate 1 forms on horizontally-parallel groove 2, each face of the groove 2 and passes through surface
Oxidation forms one layer of oxide skin(coating), and metal level is formed on the surface of the oxide skin(coating)；
Remove the metal level at the two ends of groove 2；
Graphene layer is transferred on the surface of silicon substrate 1, by metal assisted oxidation by the stone of the adjacent upper surface of groove 2
Black alkene oxidation removal, forms graphene ribbon 3；
Source electrode 4 and drain electrode 5 are formed at the two ends of groove 2 for eliminating metal level where graphene layer；
Silver layer 6 is formed at the back side of silicon substrate 1；
The upper surface width of the horizontally-parallel groove 2 is identical with basal surface width, the length of the horizontally-parallel groove 2
For more than 6 times of width, the aspect ratio of the graphene ribbon 3 is more than 6.
Further, the thickness of the oxide layer is the 1/4-1/8 of the depth of surface groove 2.
Further, the metal of the metal level is gold, silver or copper.
Further, periodic grooves 2 are also formed at the back side of silicon substrate 1, the groove 2 at the back side of silicon substrate 1 are filled with silver,
And with same material one layer of silver layer 6 of formation after the completion of filling.
Further, the horizontally-parallel groove 2 and source and drain are also removed by ion etching process after forming graphene ribbon 3
Graphene layer outside the region of pole 5.
Further, the periodicity of the horizontally-parallel groove 2 is more than 5.
Further, the horizontally-parallel groove 2 is completely covered after the graphene layer transfer.
Further, the forming position of source-drain electrode 5 abuts the two ends of the horizontally-parallel groove 2.
This application provides a kind of graphene ribbon Terahertz sensor, including the graphene ribbon connected between source-drain electrode, lead to
The metal level formed on a silicon substrate on groove and groove is crossed, graphene layer is removed and metal by metal assisted oxidation method
The part of layer contact, is formed graphene ribbon, Terahertz is detected using graphene ribbon distinctive electric property, is realized efficient
The graphene ribbon Terahertz sensor of rate.
Position relationship is used for being given for example only property explanation described in accompanying drawing, it is impossible to be interpreted as the limitation to this patent, shows
So, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not the reality to the present invention
Apply the restriction of mode.For those of ordinary skill in the field, it can also make other on the basis of the above description
Various forms of changes or variation.There is no necessity and possibility to exhaust all the enbodiments.All spirit in the present invention
With any modification, equivalent and the improvement made within principle etc., it should be included in the protection domain of the claims in the present invention
Within.
Claims (8)
1. a kind of graphene ribbon Terahertz sensor, it is characterised in that include：
Silicon substrate, the silicon substrate is formed to be formed on horizontally-parallel groove, each face of the groove by surface oxidation
One layer of oxide skin(coating), metal level is formed on the surface of the oxide skin(coating)；
Remove the metal level at the groove two ends；
Graphene layer is transferred on silicon substrate, by metal assisted oxidation by the graphene oxygen of adjacent groove upper surface
Change and remove, form graphene ribbon；
Source electrode and drain electrode are formed at the groove two ends for eliminating metal level where graphene layer；
Silver layer is formed at the back side of silicon substrate；
The upper surface width of the horizontally-parallel groove is identical with basal surface width, and the length of the horizontally-parallel groove is width
More than 6 times, the aspect ratio of the graphene ribbon is more than 6.
2. graphene ribbon Terahertz sensor as claimed in claim 1, it is characterised in that the thickness of the oxide layer is surface
The 1/4-1/8 of depth of groove.
3. graphene ribbon Terahertz sensor as claimed in claim 2, it is characterised in that the metal of the metal level is gold,
Silver or copper.
4. graphene ribbon Terahertz sensor as claimed in claim 1, it is characterised in that also form week at the back side of silicon substrate
Phase property groove, fills the groove of silicon substrate back with silver, and forms one layer of silver layer with same material after the completion of filling.
5. graphene ribbon Terahertz sensor as claimed in claim 1, it is characterised in that formed after graphene ribbon also by from
Sub- lithographic method removes the graphene layer outside the horizontally-parallel groove and source drain region.
6. graphene ribbon Terahertz sensor as claimed in claim 5, the periodicity of the horizontally-parallel groove is more than 5.
7. graphene ribbon Terahertz sensor as claimed in claim 6, it is characterised in that after the graphene layer transfer completely
Cover the horizontally-parallel groove.
8. graphene ribbon Terahertz sensor as claimed in claim 7, it is characterised in that the source-drain electrode forming position is abutted
The two ends of the horizontally-parallel groove.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811051770.3A CN109166934A (en) | 2017-04-26 | 2017-04-26 | The Terahertz sensor of graphene ribbon is formed using metal assisted oxidation |
| CN201710283429.XA CN106960892B (en) | 2017-04-26 | 2017-04-26 | Graphene ribbon Terahertz sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710283429.XA CN106960892B (en) | 2017-04-26 | 2017-04-26 | Graphene ribbon Terahertz sensor |
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| CN201811051770.3A Division CN109166934A (en) | 2017-04-26 | 2017-04-26 | The Terahertz sensor of graphene ribbon is formed using metal assisted oxidation |
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| CN106960892B CN106960892B (en) | 2018-11-06 |
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| CN201811051770.3A Withdrawn CN109166934A (en) | 2017-04-26 | 2017-04-26 | The Terahertz sensor of graphene ribbon is formed using metal assisted oxidation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110864805A (en) * | 2019-10-24 | 2020-03-06 | 北京大学 | Ultra-wideband spectrum detection device and method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微***与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
| KR20130134538A (en) * | 2012-05-31 | 2013-12-10 | 연세대학교 산학협력단 | Ultra-sensitive graphene sensor for controlling efficiency, and manufacturing method thereof |
| CN104795411A (en) * | 2015-04-15 | 2015-07-22 | 重庆大学 | Grid-control graphene nano-ribbon array THz (terahertz) detector and tuning method |
| CN106129135A (en) * | 2016-07-20 | 2016-11-16 | 电子科技大学 | Terahertz detector based on graphene field effect transistor and preparation method thereof |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN207183292U (en) * | 2017-04-26 | 2018-04-03 | 黄晓敏 | Graphene ribbon Terahertz sensor |
-
2017
- 2017-04-26 CN CN201710283429.XA patent/CN106960892B/en active Active
- 2017-04-26 CN CN201811051770.3A patent/CN109166934A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130134538A (en) * | 2012-05-31 | 2013-12-10 | 연세대학교 산학협력단 | Ultra-sensitive graphene sensor for controlling efficiency, and manufacturing method thereof |
| CN103337772A (en) * | 2013-07-03 | 2013-10-02 | 中国科学院上海微***与信息技术研究所 | Terahertz wave generator based on graphene nanoribbon |
| CN104795411A (en) * | 2015-04-15 | 2015-07-22 | 重庆大学 | Grid-control graphene nano-ribbon array THz (terahertz) detector and tuning method |
| CN106129135A (en) * | 2016-07-20 | 2016-11-16 | 电子科技大学 | Terahertz detector based on graphene field effect transistor and preparation method thereof |
| CN106374006A (en) * | 2016-10-13 | 2017-02-01 | 中国科学院上海技术物理研究所 | Room-temperature adjustable sub-Terahertz wave detector and preparation method |
| CN207183292U (en) * | 2017-04-26 | 2018-04-03 | 黄晓敏 | Graphene ribbon Terahertz sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110864805A (en) * | 2019-10-24 | 2020-03-06 | 北京大学 | Ultra-wideband spectrum detection device and method |
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| CN109166934A (en) | 2019-01-08 |
| CN106960892B (en) | 2018-11-06 |
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