CN110858609B - Igbt及其制造方法 - Google Patents

Igbt及其制造方法 Download PDF

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CN110858609B
CN110858609B CN201810967106.7A CN201810967106A CN110858609B CN 110858609 B CN110858609 B CN 110858609B CN 201810967106 A CN201810967106 A CN 201810967106A CN 110858609 B CN110858609 B CN 110858609B
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王学良
***
郎金荣
闵亚能
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SHANGHAI ADVANCED SEMICONDUCTO
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Advanced Semiconductor Manufacturing Co ltd
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Abstract

本发明公开了一种IGBT及其制造方法，其中，所述IGBT中的目标区域掺杂有第一离子，其中，所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种，所述第一离子的扩散系数大于硼离子的扩散系数。本发明中IGBT目标区域所掺杂的第一例子的扩散系数大于硼离子的扩散系数，不似现有技术中采用硼离子作为掺杂杂质，从而在相同条件下形成的杂质分布形貌更为渐变，也即形成的PN结为渐变结，进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力，进一步改良了IGBT的性能。此外，由于本发明的杂质扩散系数较大，从而能够在较低温度、较短时间内形成更宽、更深的PN结，具有一定的成本优势。

Description

IGBT及其制造方法
技术领域
本发明涉及半导体技术领域，尤其涉及一种IGBT及其制造方法。
背景技术
IGBT(Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管)综合了BJT(Bipolar Junction Transistor，双极型三极管)和功率MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor，金氧半场效晶体管)的优点，兼有高输入阻抗和低导通压降两方面的优点，在各种功率集成电路领域得到广泛的应用。
但是，在当前的IGBT中，受限于元素硼的物理性能，扩散硼离子形成的PN结为突变结，又有，PN结与击穿电压、关断时间等性能相关，进而，突变的PN结限制了当前IGBT性能的进一步提升。
发明内容
本发明要解决的技术问题是为了克服现有技术中IGBT的PN结是突变结的缺陷，提供一种IGBT及其制造方法。
本发明是通过下述技术方案来解决上述技术问题：
一种IGBT，其特点在于，所述IGBT中的目标区域掺杂有第一离子，其中，所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种，所述第一离子的扩散系数大于硼离子的扩散系数。
较佳地，所述第一离子选自：铝离子、镓离子、铟离子、铊离子。
较佳地，所述目标区域还掺杂有第二离子，所述第二离子的扩散系数不小于硼离子的扩散系数。
较佳地，所述第一离子和所述第二离子位于不同的层。
较佳地，所述第一离子选自：铝离子、镓离子、铟离子、铊离子；
所述第二离子选自：硼离子、铝离子、镓离子、铟离子、铊离子。
较佳地，所述第一离子是铝离子，所述第二离子是镓离子。
较佳地，所述目标区域与所述IGBT中其他区域的接触面上掺杂有硼离子。
一种制造IGBT的方法，其特点在于，所述方法包括：
在所述IGBT的目标区域掺杂第一离子，所述第一离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域；
其中，所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种，所述第一离子的扩散系数大于硼离子的扩散系数。
较佳地，所述方法还包括：
在所述目标区域掺杂第二离子，所述第二离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域；
其中，所述第二离子的扩散系数不小于硼离子的扩散系数。
较佳地，所述方法还包括：
在所述目标区域与所述IGBT中其他区域的接触面上掺杂硼离子。
本发明的积极进步效果在于：本发明IGBT的P型区的掺杂杂质的扩散系数大于硼离子的扩散系数，不似现有技术中采用硼离子作为掺杂杂质，从而在相同条件下形成的杂质分布形貌更为渐变，也即形成的PN结为渐变结，进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力，进一步改良了IGBT的性能。此外，由于本发明的杂质扩散系数较大，从而能够在较低温度、较短时间内形成更宽、更深的PN结，具有一定的成本优势。
附图说明
图1为根据本发明实施例1的IGBT的结构示意图。
图2为根据本发明实施例2的制造IGBT的方法的流程图。
图3为根据本发明实施例4的制造IGBT的方法的流程图。
具体实施方式
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在所述的实施例范围之中。
实施例1
本实施例提供了一种IGBT，图1示出了本实施例的结构示意图。参见图1，本实施例的IGBT从下至上依次包括：
位于IGBT背面的集电极C、P型衬底11、N型漂移区12、位于N型漂移区12两端的P型阱区13、位于P型阱区13上方的P型源区14以及N型源区15、位于P型源区14和部分N型源区15上方的发射极E、位于部分N型源区15、部分P型阱区13以及部分N型漂移区12上方的栅极G。
在本实施例的IGBT中，目标区域包括P型衬底11、P型阱区13以及P型源区14中的至少一种，本实施例中目标区域的掺杂杂质是扩散系数大于硼离子的第一离子，具体地，第一离子可以是但不限于铝离子、镓离子、铟离子、铊离子。
在本实施例中，第一离子的掺杂浓度和深度可以根据具体应用进行自定义设置。
由于本实施例中掺杂杂质第一离子是上述金属离子，进而可以在目标区域与其他区域的接触面上再掺杂硼离子，换句话说，也即在目标区域的表面上覆盖一层硼离子，以避免掺杂的金属离子所造成的金属污染。
在本实施例中，IGBT目标区域所掺杂的第一离子的扩散系数大于硼离子的扩散系数，不似现有技术中采用硼离子作为掺杂杂质，从而在相同条件下形成的杂质分布形貌更为渐变，也即形成的PN结为渐变结，进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力，进一步改良了IGBT的性能。此外，由于本发明的杂质扩散系数较大，从而能够在较低温度、较短时间内形成更宽、更深的PN结，具有一定的成本优势。
实施例2
本实施例提供一种制造IGBT的方法，用于制造实施例1的IGBT，图2示出了本实施例的流程图。参见图2，本实施例的方法包括：
S101、在目标区域掺杂第一离子；
S102、在目标区域与IGBT中其他区域的接触面上掺杂硼离子。
从而根据实施例1中目标区域的选择，以具体形成相应的P型衬底11、P型阱区13、P型源区14，其中，第一离子可以经由但不限于离子注入、扩散、蒸发、溅射中任一种方式掺杂到目标区域中。此外，硼离子也可以经由但不限于上述方式掺杂到具体接触面上，以避免掺杂的金属离子所造成的金属污染。
实施例3
本实施例在实施例1的基础上提供一种IGBT。具体地，本实施例的IGBT较之实施例1的改进之处在于，本实施例的目标区域，也即P型衬底11、P型阱区13以及P型源区14中的至少一种，除了掺杂有第一离子之外，还掺杂有第二离子，该第二离子的扩散系数不小于硼离子的扩散系数，具体地，第二离子可以是但不限于硼离子、铝离子、镓离子、铟离子、铊离子。
在本实施例中，第一离子优选铝离子，第二离子优选镓离子，或者，第一离子优选镓离子，第二离子优选铝离子。此外，第一离子和第二离子根据具体应用既可以相互掺杂在一起，也可以分布在不同的层。第二离子的掺杂浓度和深度也可以根据具体应用进行自定义设置。
在本实施例中，IGBT目标区域所掺杂的第一离子、第二离子的扩散系数均不小于硼离子的扩散系数，不似现有技术中采用硼离子作为掺杂杂质，从而在相同条件下形成的杂质分布形貌更为渐变，也即形成的PN结为渐变结，进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力，进一步改良了IGBT的性能。此外，由于本发明的杂质扩散系数较大，从而能够在较低温度、较短时间内形成更宽、更深的PN结，具有一定的成本优势。
实施例4
本实施例提供一种制造IGBT的方法，用于制造实施例3的IGBT，图3示出了本实施例的流程图。参见图3，本实施例的方法包括：
S201、在目标区域掺杂第一离子；
S202、在目标区域掺杂第二离子；
S203、在目标区域与IGBT中其他区域的接触面上掺杂硼离子。
从而根据实施例3中目标区域的选择，以具体形成相应的P型衬底11、P型阱区13、P型源区14，其中，第一离子和第二离子可以经由但不限于离子注入、扩散、蒸发、溅射中任一种方式掺杂到目标区域中。此外，硼离子也可以经由但不限于上述方式掺杂到具体接触面上，以避免掺杂的金属离子所造成的金属污染。
虽然以上描述了本发明的具体实施方式，但是本领域的技术人员应当理解，这仅是举例说明，本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下，可以对这些实施方式做出多种变更或修改，但这些变更和修改均落入本发明的保护范围。

Claims (8)

1.一种IGBT，其特征在于，所述IGBT中的目标区域掺杂有第一离子，所述第一离子经由离子注入方式掺杂到所述目标区域；其中，所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种，所述第一离子的扩散系数大于硼离子的扩散系数；
所述目标区域与所述IGBT中其他区域的接触面上掺杂有硼离子，采用注入的方式在接触面上掺杂硼离子。
2.如权利要求1所述的IGBT，其特征在于，所述第一离子选自：铝离子、镓离子、铟离子、铊离子。
3.如权利要求1所述的IGBT，其特征在于，所述目标区域还掺杂有第二离子，所述第二离子的扩散系数不小于硼离子的扩散系数。
4.如权利要求3所述的IGBT，其特征在于，所述第一离子和所述第二离子位于不同的层。
5.如权利要求3所述的IGBT，其特征在于，所述第一离子选自：铝离子、镓离子、铟离子、铊离子；
所述第二离子选自：硼离子、铝离子、镓离子、铟离子、铊离子。
6.如权利要求5所述的IGBT，其特征在于，所述第一离子是铝离子，所述第二离子是镓离子。
7.一种制造IGBT的方法，其特征在于，所述方法包括：
在所述IGBT的目标区域掺杂第一离子，所述第一离子经由离子注入方式掺杂到所述目标区域；
其中，所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种，所述第一离子的扩散系数大于硼离子的扩散系数；
所述方法还包括：
在所述目标区域与所述IGBT中其他区域的接触面上掺杂硼离子，采用注入的方式在接触面上掺杂硼离子。
8.如权利要求7所述的制造IGBT的方法，其特征在于，所述方法还包括：
在所述目标区域掺杂第二离子，所述第二离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域；
其中，所述第二离子的扩散系数不小于硼离子的扩散系数。
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