CN110858609B - Igbt及其制造方法 - Google Patents
Igbt及其制造方法 Download PDFInfo
- Publication number
- CN110858609B CN110858609B CN201810967106.7A CN201810967106A CN110858609B CN 110858609 B CN110858609 B CN 110858609B CN 201810967106 A CN201810967106 A CN 201810967106A CN 110858609 B CN110858609 B CN 110858609B
- Authority
- CN
- China
- Prior art keywords
- ions
- igbt
- target region
- doped
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- -1 boron ions Chemical class 0.000 claims abstract description 64
- 150000002500 ions Chemical class 0.000 claims abstract description 59
- 229910052796 boron Inorganic materials 0.000 claims abstract description 36
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910001449 indium ion Inorganic materials 0.000 claims description 8
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 abstract description 15
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
本发明公开了一种IGBT及其制造方法,其中,所述IGBT中的目标区域掺杂有第一离子,其中,所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种,所述第一离子的扩散系数大于硼离子的扩散系数。本发明中IGBT目标区域所掺杂的第一例子的扩散系数大于硼离子的扩散系数,不似现有技术中采用硼离子作为掺杂杂质,从而在相同条件下形成的杂质分布形貌更为渐变,也即形成的PN结为渐变结,进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力,进一步改良了IGBT的性能。此外,由于本发明的杂质扩散系数较大,从而能够在较低温度、较短时间内形成更宽、更深的PN结,具有一定的成本优势。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及一种IGBT及其制造方法。
背景技术
IGBT(Insulated Gate Bipolar Transistor,绝缘栅双极型晶体管)综合了BJT(Bipolar Junction Transistor,双极型三极管)和功率MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor,金氧半场效晶体管)的优点,兼有高输入阻抗和低导通压降两方面的优点,在各种功率集成电路领域得到广泛的应用。
但是,在当前的IGBT中,受限于元素硼的物理性能,扩散硼离子形成的PN结为突变结,又有,PN结与击穿电压、关断时间等性能相关,进而,突变的PN结限制了当前IGBT性能的进一步提升。
发明内容
本发明要解决的技术问题是为了克服现有技术中IGBT的PN结是突变结的缺陷,提供一种IGBT及其制造方法。
本发明是通过下述技术方案来解决上述技术问题:
一种IGBT,其特点在于,所述IGBT中的目标区域掺杂有第一离子,其中,所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种,所述第一离子的扩散系数大于硼离子的扩散系数。
较佳地,所述第一离子选自:铝离子、镓离子、铟离子、铊离子。
较佳地,所述目标区域还掺杂有第二离子,所述第二离子的扩散系数不小于硼离子的扩散系数。
较佳地,所述第一离子和所述第二离子位于不同的层。
较佳地,所述第一离子选自:铝离子、镓离子、铟离子、铊离子;
所述第二离子选自:硼离子、铝离子、镓离子、铟离子、铊离子。
较佳地,所述第一离子是铝离子,所述第二离子是镓离子。
较佳地,所述目标区域与所述IGBT中其他区域的接触面上掺杂有硼离子。
一种制造IGBT的方法,其特点在于,所述方法包括:
在所述IGBT的目标区域掺杂第一离子,所述第一离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域;
其中,所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种,所述第一离子的扩散系数大于硼离子的扩散系数。
较佳地,所述方法还包括:
在所述目标区域掺杂第二离子,所述第二离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域;
其中,所述第二离子的扩散系数不小于硼离子的扩散系数。
较佳地,所述方法还包括:
在所述目标区域与所述IGBT中其他区域的接触面上掺杂硼离子。
本发明的积极进步效果在于:本发明IGBT的P型区的掺杂杂质的扩散系数大于硼离子的扩散系数,不似现有技术中采用硼离子作为掺杂杂质,从而在相同条件下形成的杂质分布形貌更为渐变,也即形成的PN结为渐变结,进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力,进一步改良了IGBT的性能。此外,由于本发明的杂质扩散系数较大,从而能够在较低温度、较短时间内形成更宽、更深的PN结,具有一定的成本优势。
附图说明
图1为根据本发明实施例1的IGBT的结构示意图。
图2为根据本发明实施例2的制造IGBT的方法的流程图。
图3为根据本发明实施例4的制造IGBT的方法的流程图。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。
实施例1
本实施例提供了一种IGBT,图1示出了本实施例的结构示意图。参见图1,本实施例的IGBT从下至上依次包括:
位于IGBT背面的集电极C、P型衬底11、N型漂移区12、位于N型漂移区12两端的P型阱区13、位于P型阱区13上方的P型源区14以及N型源区15、位于P型源区14和部分N型源区15上方的发射极E、位于部分N型源区15、部分P型阱区13以及部分N型漂移区12上方的栅极G。
在本实施例的IGBT中,目标区域包括P型衬底11、P型阱区13以及P型源区14中的至少一种,本实施例中目标区域的掺杂杂质是扩散系数大于硼离子的第一离子,具体地,第一离子可以是但不限于铝离子、镓离子、铟离子、铊离子。
在本实施例中,第一离子的掺杂浓度和深度可以根据具体应用进行自定义设置。
由于本实施例中掺杂杂质第一离子是上述金属离子,进而可以在目标区域与其他区域的接触面上再掺杂硼离子,换句话说,也即在目标区域的表面上覆盖一层硼离子,以避免掺杂的金属离子所造成的金属污染。
在本实施例中,IGBT目标区域所掺杂的第一离子的扩散系数大于硼离子的扩散系数,不似现有技术中采用硼离子作为掺杂杂质,从而在相同条件下形成的杂质分布形貌更为渐变,也即形成的PN结为渐变结,进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力,进一步改良了IGBT的性能。此外,由于本发明的杂质扩散系数较大,从而能够在较低温度、较短时间内形成更宽、更深的PN结,具有一定的成本优势。
实施例2
本实施例提供一种制造IGBT的方法,用于制造实施例1的IGBT,图2示出了本实施例的流程图。参见图2,本实施例的方法包括:
S101、在目标区域掺杂第一离子;
S102、在目标区域与IGBT中其他区域的接触面上掺杂硼离子。
从而根据实施例1中目标区域的选择,以具体形成相应的P型衬底11、P型阱区13、P型源区14,其中,第一离子可以经由但不限于离子注入、扩散、蒸发、溅射中任一种方式掺杂到目标区域中。此外,硼离子也可以经由但不限于上述方式掺杂到具体接触面上,以避免掺杂的金属离子所造成的金属污染。
实施例3
本实施例在实施例1的基础上提供一种IGBT。具体地,本实施例的IGBT较之实施例1的改进之处在于,本实施例的目标区域,也即P型衬底11、P型阱区13以及P型源区14中的至少一种,除了掺杂有第一离子之外,还掺杂有第二离子,该第二离子的扩散系数不小于硼离子的扩散系数,具体地,第二离子可以是但不限于硼离子、铝离子、镓离子、铟离子、铊离子。
在本实施例中,第一离子优选铝离子,第二离子优选镓离子,或者,第一离子优选镓离子,第二离子优选铝离子。此外,第一离子和第二离子根据具体应用既可以相互掺杂在一起,也可以分布在不同的层。第二离子的掺杂浓度和深度也可以根据具体应用进行自定义设置。
在本实施例中,IGBT目标区域所掺杂的第一离子、第二离子的扩散系数均不小于硼离子的扩散系数,不似现有技术中采用硼离子作为掺杂杂质,从而在相同条件下形成的杂质分布形貌更为渐变,也即形成的PN结为渐变结,进而提高了击穿电压、缩短了关断时间、提升了抗闩锁能力,进一步改良了IGBT的性能。此外,由于本发明的杂质扩散系数较大,从而能够在较低温度、较短时间内形成更宽、更深的PN结,具有一定的成本优势。
实施例4
本实施例提供一种制造IGBT的方法,用于制造实施例3的IGBT,图3示出了本实施例的流程图。参见图3,本实施例的方法包括:
S201、在目标区域掺杂第一离子;
S202、在目标区域掺杂第二离子;
S203、在目标区域与IGBT中其他区域的接触面上掺杂硼离子。
从而根据实施例3中目标区域的选择,以具体形成相应的P型衬底11、P型阱区13、P型源区14,其中,第一离子和第二离子可以经由但不限于离子注入、扩散、蒸发、溅射中任一种方式掺杂到目标区域中。此外,硼离子也可以经由但不限于上述方式掺杂到具体接触面上,以避免掺杂的金属离子所造成的金属污染。
虽然以上描述了本发明的具体实施方式,但是本领域的技术人员应当理解,这仅是举例说明,本发明的保护范围是由所附权利要求书限定的。本领域的技术人员在不背离本发明的原理和实质的前提下,可以对这些实施方式做出多种变更或修改,但这些变更和修改均落入本发明的保护范围。
Claims (8)
1.一种IGBT,其特征在于,所述IGBT中的目标区域掺杂有第一离子,所述第一离子经由离子注入方式掺杂到所述目标区域;其中,所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种,所述第一离子的扩散系数大于硼离子的扩散系数;
所述目标区域与所述IGBT中其他区域的接触面上掺杂有硼离子,采用注入的方式在接触面上掺杂硼离子。
2.如权利要求1所述的IGBT,其特征在于,所述第一离子选自:铝离子、镓离子、铟离子、铊离子。
3.如权利要求1所述的IGBT,其特征在于,所述目标区域还掺杂有第二离子,所述第二离子的扩散系数不小于硼离子的扩散系数。
4.如权利要求3所述的IGBT,其特征在于,所述第一离子和所述第二离子位于不同的层。
5.如权利要求3所述的IGBT,其特征在于,所述第一离子选自:铝离子、镓离子、铟离子、铊离子;
所述第二离子选自:硼离子、铝离子、镓离子、铟离子、铊离子。
6.如权利要求5所述的IGBT,其特征在于,所述第一离子是铝离子,所述第二离子是镓离子。
7.一种制造IGBT的方法,其特征在于,所述方法包括:
在所述IGBT的目标区域掺杂第一离子,所述第一离子经由离子注入方式掺杂到所述目标区域;
其中,所述目标区域包括P型衬底、P型阱区、P型源区中的至少一种,所述第一离子的扩散系数大于硼离子的扩散系数;
所述方法还包括:
在所述目标区域与所述IGBT中其他区域的接触面上掺杂硼离子,采用注入的方式在接触面上掺杂硼离子。
8.如权利要求7所述的制造IGBT的方法,其特征在于,所述方法还包括:
在所述目标区域掺杂第二离子,所述第二离子经由离子注入、扩散、蒸发、溅射中任一种方式掺杂到所述目标区域;
其中,所述第二离子的扩散系数不小于硼离子的扩散系数。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810967106.7A CN110858609B (zh) | 2018-08-23 | 2018-08-23 | Igbt及其制造方法 |
PCT/CN2019/090835 WO2020038079A1 (zh) | 2018-08-23 | 2019-06-12 | Igbt及其制造方法 |
US17/259,961 US11652164B2 (en) | 2018-08-23 | 2019-06-12 | IGBT and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810967106.7A CN110858609B (zh) | 2018-08-23 | 2018-08-23 | Igbt及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110858609A CN110858609A (zh) | 2020-03-03 |
CN110858609B true CN110858609B (zh) | 2021-11-05 |
Family
ID=69592308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810967106.7A Active CN110858609B (zh) | 2018-08-23 | 2018-08-23 | Igbt及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11652164B2 (zh) |
CN (1) | CN110858609B (zh) |
WO (1) | WO2020038079A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110858609B (zh) | 2018-08-23 | 2021-11-05 | 上海先进半导体制造股份有限公司 | Igbt及其制造方法 |
CN113178385B (zh) * | 2021-03-31 | 2022-12-23 | 青岛惠科微电子有限公司 | 一种芯片的制造方法、制造设备和芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
CN107481929A (zh) * | 2016-06-08 | 2017-12-15 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、电子装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6219045B2 (ja) | 2013-03-22 | 2017-10-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP6421487B2 (ja) * | 2014-07-31 | 2018-11-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US9577045B2 (en) * | 2014-08-04 | 2017-02-21 | Fairchild Semiconductor Corporation | Silicon carbide power bipolar devices with deep acceptor doping |
CN106024933A (zh) * | 2016-08-04 | 2016-10-12 | 江南大学 | 一种晶体硅太阳电池的背面局部双质杂质掺杂结构及其掺杂方法 |
CN110858609B (zh) | 2018-08-23 | 2021-11-05 | 上海先进半导体制造股份有限公司 | Igbt及其制造方法 |
-
2018
- 2018-08-23 CN CN201810967106.7A patent/CN110858609B/zh active Active
-
2019
- 2019-06-12 WO PCT/CN2019/090835 patent/WO2020038079A1/zh active Application Filing
- 2019-06-12 US US17/259,961 patent/US11652164B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064429A (ja) * | 2003-08-20 | 2005-03-10 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
CN107481929A (zh) * | 2016-06-08 | 2017-12-15 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、电子装置 |
Also Published As
Publication number | Publication date |
---|---|
US11652164B2 (en) | 2023-05-16 |
WO2020038079A1 (zh) | 2020-02-27 |
CN110858609A (zh) | 2020-03-03 |
US20210313457A1 (en) | 2021-10-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5973359A (en) | MOS type semiconductor device | |
US20070145410A1 (en) | Jfet with drain and/or source modificaton implant | |
CN108615730B (zh) | 半导体器件及其制造方法 | |
CN110858609B (zh) | Igbt及其制造方法 | |
CN108365007B (zh) | 绝缘栅双极型晶体管 | |
US9263560B2 (en) | Power semiconductor device having reduced gate-collector capacitance | |
US9887266B2 (en) | Ultra-low drain-source resistance power MOSFET | |
US20160276474A1 (en) | Semiconductor device | |
US20090065863A1 (en) | Lateral double diffused metal oxide semiconductor device | |
JP2004079878A (ja) | 半導体装置及びその製造方法 | |
KR20010020486A (ko) | 폭이 넓은 밴드갭 반도체 내의 전력 소자 | |
CN101459084B (zh) | 平面双扩散金属氧化物半导体器件及其制作方法 | |
US20150144990A1 (en) | Power semiconductor device and method of manufacturing the same | |
KR101786668B1 (ko) | 반도체 소자 및 그 제조 방법 | |
US20100084684A1 (en) | Insulated gate bipolar transistor | |
KR20190124894A (ko) | 반도체 소자 및 그 제조 방법 | |
CN111293163B (zh) | 横向扩散金属氧化物半导体场效应晶体管 | |
KR20120091197A (ko) | 펀치스루 반도체 디바이스 및 그의 제조 방법 | |
US20090032885A1 (en) | Buried Isolation Layer | |
US9755020B2 (en) | Semiconductor device and manufacturing method thereof | |
CN106876441B (zh) | 具有固定界面电荷场限环的功率器件 | |
CN104733528A (zh) | 半导体器件及其制造方法 | |
TWI770782B (zh) | 屏蔽閘極溝槽式金氧半場效電晶體 | |
CN113363324B (zh) | P沟道的平面型vdmos和平面型igbt | |
CN113488525B (zh) | 一种具有电荷积累效应的超结ea-sj-finfet器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: No.385, Hongcao Road, Xuhui District, Shanghai 200233 Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |