CN110856900B - Method and apparatus for manufacturing semiconductor device - Google Patents

Method and apparatus for manufacturing semiconductor device Download PDF

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Publication number
CN110856900B
CN110856900B CN201910732906.5A CN201910732906A CN110856900B CN 110856900 B CN110856900 B CN 110856900B CN 201910732906 A CN201910732906 A CN 201910732906A CN 110856900 B CN110856900 B CN 110856900B
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Prior art keywords
semiconductor device
device wafer
wafer
rotary cutter
trimming
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CN201910732906.5A
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CN110856900A (en
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山本荣一
三井贵彦
坂东翼
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Okamoto Machine Tool Works Ltd
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Okamoto Machine Tool Works Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Die Bonding (AREA)

Abstract

The invention provides a method and an apparatus for manufacturing a semiconductor device. The method for manufacturing the semiconductor device comprises the following steps: a suction step of mounting a device surface of the semiconductor device wafer on an upper surface of the chuck mechanism; and an edge trimming process performed after the suction process, the edge trimming process including: horizontally rotating the semiconductor device wafer with the chuck mechanism; horizontally rotating the rotary cutter by using a vertical spindle to which ultrasonic waves are applied; and trimming the peripheral side surface of the semiconductor device wafer with the rotary cutter.

Description

Method and apparatus for manufacturing semiconductor device
Cross reference to related applications
The present application is based on japanese patent application No. 2018-154786 filed in the japanese franchise on month 21 of 2018, the entire contents of which are hereby incorporated by reference.
Technical Field
Embodiments of the present invention relate to a method and an apparatus for manufacturing a semiconductor device.
Background
In semiconductor device fabrication, it is required to package a semiconductor device wafer to be thinner. Specifically, the thickness of the semiconductor device wafer is desired to be 50 μm or less. Semiconductor device wafers having a thickness of 10 μm have been realized in the most advanced technology.
Thinning of semiconductor device wafers is performed by grinding techniques using fixed abrasive grain grinding wheels. When the semiconductor device wafer is thinned, if a crack occurs at the wafer edge, the yield of semiconductor device chips is lowered.
The main reason for cracking at the wafer edge is that the grinding wheel collides with the sharp edge of the semiconductor device wafer in the thin-layer process. Therefore, it has been known that the wafer edge is trimmed (chamfered) before grinding for thinning in order to suppress breakage of the semiconductor device wafer.
For example, japanese patent laying-open No. 2009-39808 discloses edge grinding (chamfering) of a semiconductor substrate using a cup-shaped diamond grinding wheel. In the edge grinding process of this document, a diamond grinding wheel that rotates horizontally with respect to a horizontally rotating semiconductor substrate is used. Specifically, the horizontally rotated diamond grinding wheel is lowered from above so that the vertical surface of the outer peripheral edge portion of the diamond grinding wheel coincides with the vertical surface of the outer peripheral edge portion of the semiconductor substrate, and the edge surface of the semiconductor substrate is ground and cut.
Further, japanese patent application laid-open publication No. 2011-142201 discloses an edge grinding process of a semiconductor substrate using a diamond-made edge grinding wheel that vertically rotates about a horizontal axis. In the edge grinding step of this document, a vertically rotating edge grinding wheel is lowered toward the outer peripheral edge of a horizontally rotating semiconductor substrate. Thereby, the thickness of the outer peripheral edge of the semiconductor substrate is reduced to a desired thickness.
Further, an end grinding device is disclosed in Japanese patent laid-open publication No. 9-216152. In this end grinding apparatus, the diamond grinding wheel is rotated vertically by a spindle disposed in the Y-axis direction (horizontal direction). The outer peripheral surface of the vertically rotating diamond grinding wheel is brought into contact with the outer peripheral portion of the horizontally rotating semiconductor wafer, whereby the outer peripheral portion of the semiconductor wafer is ground.
In addition, conventionally, there has been known a WSS (Wafer Support System wafer support system) which is a method of attaching a BG Tape (Back grinding Tape) to a device surface of a semiconductor device wafer as a grinding protection layer and forming a support wafer with a resin on the device surface of the semiconductor device wafer.
The conventional trimming process is generally performed by cutting off a part of the edge portion of the device surface of the semiconductor device wafer with a diamond tool. Then, a BG tape or a WSS supporting wafer is attached to the device surface of the semiconductor device wafer. Thereafter, the back surface of the semiconductor device wafer is removed by grinding. Thereby, the semiconductor device wafer is thinned.
As described above, in the field of semiconductor devices, further thinning of semiconductor device wafers is demanded. In order to achieve the above-described thinning, a high-precision trimming technique for suppressing breakage of the semiconductor device wafer is required.
However, in the above-described conventional techniques, it is difficult to realize a highly accurate and efficient edge trimming process for suppressing chipping of the semiconductor device wafer.
Specifically, in the method of dressing the edge with a cup-shaped diamond grinding wheel, which is one of the above-mentioned prior arts, the processing speed is slow and the working efficiency is low. Further, the verticality of the dressing bottom surface is deteriorated due to abrasion of the cup-shaped diamond grinding wheel, and the dressing bottom surface becomes tapered.
Further, in the method of performing trimming by pressing the vertically rotating diamond tool against the edge portion of the horizontally rotating semiconductor device wafer, the diamond tool is in line contact with the semiconductor device wafer. Therefore, the shear stress of the semiconductor device wafer is large.
Therefore, in the method of forming the support wafer on the device side of the semiconductor device wafer with the WSS via the resin, if the bonding of the WSS is incomplete, new defects may be generated on the semiconductor device wafer and/or the WSS due to the shear stress of the diamond tool.
In the method of removing the edge portion of the device surface of the semiconductor device wafer with the diamond tool, the BG tape is attached or the WSS supporting wafer is formed in a state where the step is formed on the outer periphery of the device surface. Therefore, thickness variation of the semiconductor device wafer is likely to occur when the thinning process is performed.
In the above method for trimming the device surface of the semiconductor device wafer, it is necessary to remove the semiconductor wafer such as silicon (Si) located thereunder through a metal and an insulating film which are difficult to process. Therefore, the abrasion of the diamond tool becomes large.
In addition, in the above-described method of trimming the device face of the semiconductor device wafer, scattered dust and contaminants are easily attached to the device face. Therefore, it is necessary to perform precision cleaning or the like, which increases the process cost.
Disclosure of Invention
An object of the present invention is to provide a method and an apparatus for manufacturing a semiconductor device with high work efficiency, which can perform a high-precision and high-efficiency trimming process capable of suppressing breakage of a semiconductor device wafer.
The invention provides a method for manufacturing a semiconductor device, which comprises the following steps: a suction step of mounting a device surface of the semiconductor device wafer on an upper surface of the chuck mechanism; and an edge trimming process performed after the suction process, the edge trimming process including: horizontally rotating the semiconductor device wafer with the chuck mechanism; horizontally rotating the rotary cutter by using a vertical spindle to which ultrasonic waves are applied; and trimming the peripheral side surface of the semiconductor device wafer with the rotary cutter.
Further, the present invention provides an apparatus for manufacturing a semiconductor device, including: a chuck mechanism for sucking a semiconductor device wafer with a device face down by means of a bonding resin layer and a support substrate bonded to the semiconductor device wafer by means of the bonding resin layer, and horizontally rotating the semiconductor device wafer; a rotary cutter which horizontally rotates by using a vertical spindle to trim the peripheral side surface of the semiconductor device wafer and the upper part of the bonding resin layer, the peripheral side surface being adsorbed to the chuck mechanism and horizontally rotated; and an ultrasonic vibration device for applying ultrasonic waves to the vertical spindle, wherein the vertical spindle is pivotally supported by bearings provided at upper and lower portions of the vertical spindle, and the rotary cutter is connected to the vertical spindle between the bearings provided at the upper and lower portions of the vertical spindle.
According to the manufacturing method of the present invention, after performing the suction process of mounting the device side of the semiconductor device wafer down on the upper surface of the chuck mechanism, edge trimming is performed. Edge trimming includes: horizontally rotating the semiconductor device wafer by using a suction cup mechanism; the vertical main shaft is utilized to horizontally rotate the rotary cutter; and trimming the peripheral side surface of the semiconductor device wafer with a rotary cutter. Thus, the peripheral side surface of the semiconductor device wafer can be trimmed while suppressing the influence of various coating films such as a metal film and an insulating film formed on the device surface.
In particular, in the edge trimming step of the manufacturing method of the present invention, the rotary cutter is horizontally rotated by the vertical spindle to which ultrasonic waves are applied. Thus, the edge dressing according to the manufacturing method of the present invention can perform high-speed and high-precision dressing as compared with dressing using a cup-shaped diamond grinding wheel or the like in the related art. Further, since the wear of the rotary cutter is small, breakage in the vicinity of the trimmed peripheral side surface can be suppressed.
In addition, the semiconductor device wafer is trimmed with a rotary tool horizontally rotated with ultrasonic waves applied thereto in a state where the device is mounted face down on the chuck mechanism. Therefore, the device face in the semiconductor device wafer is not easily contaminated. Therefore, the semiconductor device does not need to be precisely cleaned, and thus the cost of the semiconductor device is reduced.
In addition, the manufacturing method of the present invention may include a thinning process performed after edge trimming, and the back surface of the semiconductor device wafer may be processed by a grinding method using a cup wheel, thereby thinning the semiconductor device wafer. Thereby, thinning with small thickness variation can be performed. Therefore, a highly planarized and thinned semiconductor device wafer can be obtained.
Further, as the suction cup mechanism, a structure in which the device surface is held by a BG tape or a support wafer with resin by WSS adhesion can be used. Therefore, in the thinning process, variations in the thickness of the semiconductor device wafer are less likely to occur. In addition, the device face is protected by BG tape or WSS support wafer. Therefore, the device face is not easily contaminated and dust is not easily attached to the device face.
Further, according to the manufacturing method of the present invention, the vicinity of the peripheral grinding wheel face of the rotary cutter for edge trimming may be thinner than the semiconductor device wafer. Thus, a recess extending in the rotation direction can be formed in the peripheral side surface of the semiconductor device wafer. Thus, contamination of the back surface of the semiconductor device wafer can be reduced. Therefore, precise thinning can be performed.
The manufacturing apparatus of the present invention includes: a chuck mechanism that adsorbs a device face of a semiconductor device wafer downward and horizontally rotates the semiconductor device wafer; a rotary cutter for trimming the peripheral side surface of the semiconductor device wafer sucked to the suction cup mechanism and rotated horizontally by horizontally rotating the rotary cutter by using the vertical spindle; and an ultrasonic vibration device for applying ultrasonic waves to the vertical spindle. Thus, the semiconductor device wafer can be subjected to high-precision and high-efficiency trimming processing. Therefore, cracking can be suppressed and production efficiency can be improved.
Further, according to the manufacturing apparatus of the present invention, a cup wheel for thinning the semiconductor device wafer by processing the back surface of the semiconductor device wafer trimmed with the rotary tool may be provided above the chuck mechanism. This can planarize the back surface of the semiconductor device wafer with high accuracy. Therefore, further thinning of the semiconductor device wafer can be achieved.
Further, according to the manufacturing apparatus of the present invention, the vertical spindle can be pivotally supported above and below the rotary cutter. Thereby, vibration of the rotary cutter is suppressed. As a result, since the rotation accuracy of the rotary cutter is improved, the very accurate position of the peripheral side surface of the semiconductor device wafer can be trimmed.
Drawings
Fig. 1 is a front view showing an edge trimming apparatus of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
Fig. 2 is a plan view showing a semiconductor device manufacturing apparatus according to an embodiment of the present invention.
Fig. 3A to 3D are diagrams showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. Fig. 3A is a diagram showing a state in which a semiconductor device wafer is prepared in the suction process. Fig. 3B is a diagram showing a state where trimming is performed in the edge trimming process. Fig. 3C is a diagram showing a state in which the edge trimming process is completed. Fig. 3D is a diagram showing a state in which thinning is performed in the thinning process.
Fig. 4A and 4B are diagrams showing the vicinity of the trimming surface according to the embodiment of the present invention. Fig. 4A is a diagram showing a state after the edge trimming process is completed. Fig. 4B is a diagram showing a state in which thinning is performed in the thinning process.
Fig. 5A to 5D are diagrams showing a method for manufacturing a semiconductor device according to another embodiment of the present invention. Fig. 5A is a diagram showing a state in which a semiconductor device wafer is prepared in the suction process. Fig. 5B is a diagram showing a state where trimming is performed in the edge trimming process. Fig. 5C is a diagram showing a state after the edge trimming process is completed. Fig. 5D is a diagram showing a state in which thinning is performed in the thinning process.
Description of the reference numerals
1. Full-automatic grinding device
10. Edge trimming device
11. Vacuum chuck
12. Bonding resin layer
13. Support substrate
14. Protective adhesive tape
15. Vertical main shaft
16. Ultrasonic oscillation device
17. Rotary cutter
18. Bearing
30. Semiconductor device wafer
31. Semiconductor device layer
32. Device side
33. Peripheral side surface
34. Back surface
35. Finishing surface
Detailed Description
In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are schematically shown in order to simplify the drawing.
Hereinafter, a method and an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic diagram showing a manufacturing apparatus of a semiconductor device according to the present embodiment, and is a front view showing a schematic configuration of an edge trimming apparatus 10. Referring to fig. 1, an edge trimming apparatus 10 trims a peripheral side surface 33 of a semiconductor device wafer 30.
The edge trimming device 10 has: a vacuum chuck 11, a vertical spindle 15, a rotary cutter 17 and an ultrasonic oscillation device 16. The vacuum chuck 11 supports and horizontally rotates the semiconductor device wafer 30. The rotary cutter 17 grinds the peripheral side face 33 of the semiconductor device wafer 30. The vertical spindle 15 supports a rotary cutter 17. The ultrasonic oscillation device 16 applies ultrasonic waves to the vertical main shaft 15. The ultrasonic oscillation device 16 corresponds to an example of an ultrasonic oscillation device.
The vacuum chuck 11 constitutes a chuck mechanism that adsorbs the semiconductor device wafer 30. The vacuum chuck 11 is horizontally rotatably provided so that its rotation axis is substantially vertical. A semiconductor device wafer 30 is mounted on the upper surface of the vacuum chuck 11 via a protective layer formed of a support substrate 13 or the like. The semiconductor device wafer 30 mounted on the vacuum chuck 11 is horizontally rotated together with a chuck mechanism such as the vacuum chuck 11.
The rotary cutter 17 is, for example, a diamond wheel cutter including a diamond wheel fixed by a ceramic bond. The rotary cutter 17 is supported by the vertical spindle 15 at its center so as to be horizontally rotatable. The rotary cutter 17 is provided at a position where its outer peripheral portion can abut against the peripheral side surface 33 of the semiconductor device wafer 30.
The vertical spindle 15 is a rotation shaft that supports the rotary cutter 17. The rotation axis of the vertical spindle 15 extends in the vertical direction. Thus, the vertical spindle 15 is provided to be horizontally rotatable. The vertical spindle 15 is driven to rotate by a driving device, not shown, and thereby the rotary cutter 17 horizontally rotates.
The vertical spindle 15 and the rotary cutter 17 are provided so as to be movable in the horizontal direction toward the semiconductor device wafer 30. As a result, the horizontally rotating rotary cutter 17 can be brought close to the semiconductor device wafer 30 held by the vacuum chuck 11 and rotated horizontally, and the outer Zhou Sha tread of the rotary cutter 17 can be pressed against the peripheral side surface 33 of the semiconductor device wafer 30. Further, the peripheral surface 33 of the semiconductor device wafer 30 can be ground with high accuracy by using the peripheral grinding wheel surface of the rotary cutter 17, and the dressing surface 35 of a desired depth can be formed.
In addition, in order to perform trimming by pressing the outer side Zhou Shalun of the horizontally rotating rotary cutter 17 against the peripheral side 33 of the semiconductor device wafer 30 horizontally rotated in the above-described manner, the vacuum chuck 11 holding the semiconductor device wafer 30 can be made movable in the horizontal direction.
The rotary cutter 17 or the vacuum chuck 11 may be movable in the up-down direction. This allows the trimming to be repeated while changing the vertical position of the rotary cutter 17 with respect to the semiconductor device wafer 30. Thus, the trimming surface 35 can be formed in a desired range in the up-down direction of the peripheral side surface 33 of the semiconductor device wafer 30.
Further, the vertical spindle 15 is pivotally supported above and below the rotary cutter 17 by bearings 18. Thus, by pivotally supporting the vertical spindle 15 at the upper and lower portions, rotational vibration of the rotary cutter 17 is suppressed. As a result, since the rotation accuracy of the rotary cutter 17 is improved, precise finishing processing with good accuracy can be performed.
The ultrasonic oscillation device 16 applies ultrasonic waves to the vertical main shaft 15. By applying ultrasonic waves to the vertical spindle 15 by the ultrasonic oscillation device 16, ultrasonic waves are applied to the rotary cutter 17, and the rotary cutter 17 is vibrated ultrasonically in the rotation radius direction. This allows the peripheral surface 33 of the semiconductor device wafer 30 to be trimmed at high speed and with high accuracy. Further, by applying ultrasonic waves to the rotary cutter 17, abrasion of the rotary cutter 17 is reduced. This can suppress cracking in the vicinity of the peripheral side surface 33 after trimming of the semiconductor device wafer 30.
Fig. 2 is a plan view showing a manufacturing apparatus of a semiconductor device, and shows a schematic configuration of the fully automatic grinding apparatus 1 in which the edge trimming apparatus 10 is incorporated. Referring to fig. 2, the fully automatic grinding apparatus 1 automatically performs a series of steps of an adsorption step, an edge trimming step, a thinning step, and a cleaning step to a semiconductor device wafer 30 (refer to fig. 1).
The fully automatic grinding apparatus 1 includes a transfer robot 21 that transfers a semiconductor device wafer 30, a standby stage 22 that performs each process, an ultrasonic trimming stage 23, a rough grinding stage 25, a finish grinding stage 27, and a cleaning unit 29.
The full-automatic grinding apparatus 1 includes a 90-degree index table 20 on which the respective tables 22, 23, 25, and 27 are mounted. The 90 degree index table 20 indexes the semiconductor device wafer 30 by 90 degrees to the standby table 22, the ultrasonic trimming table 23, the rough grinding table 25, and the finish grinding table 27. For example, the 90-degree index table 20 rotationally moves (revolves) the semiconductor device wafer 30 (the standby table 22 carrying the semiconductor device wafer 30) by 90 degrees each time (index conveyance). Thus, the 90 degree index table 20 functions as a stand-by table 22, an ultrasonic trimming table 23, a rough grinding table 25, and a finish grinding table 27 on which the semiconductor device wafer 30 is mounted.
The standby stage 22 is a stage for performing the suction process of the semiconductor device wafer 30. The semiconductor device wafer 30 to be processed is first transferred to the standby stage 22 by the transfer robot 21. Then, the suction process of the semiconductor device wafer 30 is performed on the standby stage 22.
The ultrasonic trimming stage 23 is a stage for performing an edge trimming process of the semiconductor device wafer 30. After the suction process is performed by the standby stage 22, the 90-degree index stage 20 indexes and conveys the semiconductor device wafer 30 by 90 degrees in the clockwise direction. Thereby, the edge trimming process of the semiconductor device wafer 30 is performed at the ultrasonic trimming stage 23. Specifically, a part of the peripheral side surface 33 of the semiconductor device wafer 30 is ground by the rotary cutter 17 of the edge trimming device 10 which rotates horizontally in a state where ultrasonic waves are applied.
Further, the fully automatic grinding apparatus 1 includes a dressing shape evaluation unit 24. The trimming shape evaluation unit 24 accurately detects and evaluates the trimming shape of the semiconductor device wafer 30. Thereby, highly accurate trimming is achieved.
The rough grinding stage 25 and the finish grinding stage 27 are stages for performing thin-layer processing of the semiconductor device wafer 30. A rough grinding head 26 for rough grinding the upper surface of the semiconductor device wafer 30 is provided above the rough grinding stage 25. Further, a finish grinding head 28 for finish grinding the upper surface of the semiconductor device wafer 30 is provided above the finish grinding stage 27.
On the ultrasonic trimming stage 23, the semiconductor device wafer 30 after the edge trimming process is further indexed and conveyed by 90 degrees in the clockwise direction by the 90-degree index table 20. Further, the rough grinding stage 25 performs rough grinding in which the rough grinding head 26 is thinned.
Then, the semiconductor device wafer 30 subjected to rough grinding in the rough grinding stage 25 is index-fed from the 90 degree index stage 20 to the finish grinding stage 27. The semiconductor device wafer 30 is finish ground to a final thickness using the finish grinding head 28.
The semiconductor device wafer 30 thinned in the finish grinding stage 27 is returned to the standby stage 22 by the 90 degree index stage 20. Thereafter, the cleaning unit 29 is conveyed by the conveying robot 21. Then, a cleaning step of cleaning the semiconductor device wafer 30 is performed in the cleaning unit 29.
The fully automatic grinding apparatus 1 shown in fig. 2 is only an example of the apparatus for manufacturing a semiconductor device according to the present embodiment. For example, the edge trimming device 10 may be separated from the fully automatic grinding device 1 to realize a separate fully automatic trimming device.
Further, the edge trimming device 10 may be provided on the portion where the cleaning unit 29 is provided as shown in fig. 2. Thus, an automatic grinding apparatus with the edge finishing apparatus 10 having the edge finishing apparatus 10 separated from the grinding tables of the rough grinding table 25 and the finish grinding table 27 can be obtained.
Next, a method for manufacturing the semiconductor device according to this embodiment will be described in detail.
Fig. 3A to 3D are diagrams showing a method of manufacturing a semiconductor device. Fig. 3A is a diagram showing a state in which the semiconductor device wafer 30 is prepared in the suction process. Fig. 3B is a diagram showing a state where trimming is performed in the edge trimming process. Fig. 3C is a diagram showing a state after the edge trimming process is completed. Fig. 3D is a diagram showing a state in which thinning is performed in the thinning process.
Referring to fig. 3A, a semiconductor device wafer 30 is a silicon wafer on which a semiconductor device layer 31 is formed. The semiconductor device wafer 30 has a diameter of 300mm and a thickness of 775 μm, for example.
In the suction process, a support substrate 13 as a silicon support wafer is bonded to the device surface 32 of the semiconductor device wafer 30 by the WSS method via a bonding resin layer 12 made of a silicone resin. The thickness of the adhesive resin layer 12 is, for example, 40 μm, and the thickness of the support substrate 13 is, for example, 750 μm.
Next, as shown in fig. 3B, the semiconductor device wafer 30 holds the device face 32 down on the vacuum chuck 11 by bonding the resin layer 12 and the support substrate 13.
Then, an edge trimming process is performed on the ultrasonic trimming stage 23 (see fig. 2). In the edge trimming process, the semiconductor device wafer 30 is horizontally rotated using the vacuum chuck 11. Further, the outer peripheral grinding wheel surface of the rotary cutter 17 to which ultrasonic waves are applied, which is also rotated horizontally, is pressed against the peripheral side surface 33 of the semiconductor device wafer 30. Thereby, the peripheral side surface 33 of the semiconductor device wafer 30 is trimmed.
The upper portion of the adhesive resin layer 12 may be ground together with the peripheral side surface 33 by the rotary cutter 17. This can improve the effect of suppressing cracking of the semiconductor device wafer 30.
The diameter of the rotary cutter 17 is, for example, 100mm, and the thickness of the outer Zhou Shalun surface is 0.15mm. The diamond grinding wheel of the rotary cutter 17 preferably has a particle size of from #240 to #8000, more preferably from #1000 to #3000, and most preferably #2000.
In addition, the rotational speed of the rotary cutter 17 in the edge trimming process is preferably from 8000 to 12000min -1 . The rotational speed of the semiconductor device wafer 30 is preferably from 250 to 350 minutes -1 . The horizontal movement speed of the vertical spindle 15 is preferably from 0.3 to 0.7mm/min.
For example, the finishing surface 35 is finished by finishing for 3 minutes under the following conditions, and the depth from the peripheral side surface 33 to 1.5mm is setDegree, the condition is that the rotation speed of the rotary cutter 17 is 10000min -1 Setting the rotation speed of the semiconductor device wafer 30 to 300min -1 The horizontal movement speed of the vertical spindle 15 was set to 0.5mm/min. By the trimming under the above conditions, the semiconductor device wafer 30 having a surface roughness of from 15 to 20nm (Ra) is obtained.
As described above, in the edge dressing step, the rotary cutter 17 is horizontally rotated by the vertical spindle 15 to which ultrasonic waves are applied, so that dressing with high speed and high accuracy can be performed as compared with dressing with a cup-shaped diamond grinding wheel or the like in the related art. Further, by applying ultrasonic waves to the horizontally rotating rotary cutter 17, abrasion of the rotary cutter 17 is reduced. This can suppress cracking in the vicinity of the trimmed peripheral side surface 33.
Among them, the frequency of the ultrasonic wave applied from the ultrasonic oscillation device 16 to the vertical spindle 15 is preferably 16 to 1000kHz, more preferably 20 to 100kHz, and most preferably 40kHz. Thus, the trimming performance suitable for the semiconductor device wafer 30 can be obtained.
The semiconductor device wafer 30 is trimmed by the rotating tool 17 to which ultrasonic waves are applied, which rotates horizontally with the device surface 32 facing downward and held by the vacuum chuck 11. Therefore, the device face 32 is not easily contaminated. Thus, no precise cleaning is required, and the cost of the semiconductor device is reduced. Further, the peripheral side surface 33 of the semiconductor device wafer 30 can be trimmed while suppressing the influence of various films such as a metal film and an insulating film formed on the surface of the device surface 32.
A trimming surface 35 is formed on the peripheral side surface 33 of the semiconductor device wafer 30 by an edge trimming process. Specifically, the vicinity of the peripheral grinding wheel surface of the rotary cutter 17 is thinner than the semiconductor device wafer 30. Accordingly, as shown in fig. 3C, the trimming surface 35 forms a circumferential recess recessed from the peripheral side surface 33 and extending in the rotation direction of the semiconductor device wafer 30.
By forming the concave trimming surface 35 on the peripheral side surface 33 of the semiconductor device wafer 30 by the edge trimming process, contamination of the back surface 34 of the semiconductor device wafer 30 can be reduced. This enables precise thinning processing in the next thinning process.
After the edge trimming process, a thinning process is sequentially performed on the rough grinding stage 25 (see fig. 2) and the fine grinding stage 27 (see fig. 2). In the thin layer process, the back surface 34 of the semiconductor device wafer 30 is ground by a grinding method using a cup wheel, not shown. As a result, as shown in fig. 3D, the semiconductor device wafer 30 is thinned.
The cup wheel used in the thinning process is, for example, a cup wheel having diamond abrasive grains of sizes #240 to # 8000. The abrasive grains of the cup wheel can be made large and the rotational speed reduced in rough grinding. On the other hand, in finish grinding, the abrasive grains of the cup wheel can be made small and the rotational speed can be increased.
By performing the thinning process after the edge trimming process, thinning with small thickness variation can be performed. Thus, a highly planarized and thinned semiconductor device wafer 30 can be obtained. As the chuck mechanism, a structure can be used in which the support substrate 13 is attached via the adhesive resin layer 12 to hold the device surface 32 of the semiconductor device wafer 30. Therefore, in the thinning process, the thickness variation of the semiconductor device wafer 30 is less likely to occur. The device surface 32 is protected by the support substrate 13. Therefore, the device face 32 is not easily contaminated and dust is not easily attached to the device face 32.
Fig. 4A and 4B are diagrams showing the vicinity of the trimming surface 35 of the semiconductor device wafer 30. Fig. 4A is a diagram showing a state after the edge trimming process is completed. Fig. 4B is a diagram showing a state in which thinning is performed in the thinning process.
As shown in fig. 4A and 4B, the concave trimming surface 35 formed on the peripheral side surface 33 may be formed in a substantially truncated cone shape having an upper diameter smaller than a lower diameter. Specifically, the angle of the device face 32 to the inclined trim face 35 is 70 to 90 degrees, preferably about 80 degrees. Thus, by forming the trimming surface 35 inclined to have a small upper diameter, breakage of the semiconductor device wafer 30 can be further reduced.
Fig. 5A to 5D are diagrams showing other examples of a method for manufacturing a semiconductor device. Fig. 5A is a diagram showing a state in which the semiconductor device wafer 30 is prepared in the suction process. Fig. 5B is a diagram showing a state where trimming is performed in the edge trimming process. Fig. 5C is a diagram showing a state after the edge trimming process is completed. Fig. 5D is a diagram showing a state in which thinning is performed in the thinning process. In addition, the same reference numerals are used for the constituent elements that perform the same or substantially the same operations and effects as those of the embodiment described above.
Referring to fig. 5A, in the suction process, a BG tape, i.e., a protective tape 14, is attached to the device surface 32 of the semiconductor device wafer 30. As the protective tape 14, for example, UV tape E8180 having a thickness of 180 μm manufactured by lindeke corporation (LINTEC Corporation) is used.
Further, as shown in fig. 5B, the semiconductor device wafer 30 holds the device face 32 down to the vacuum chuck 11 with the protective tape 14.
Next, in the trimming step, the semiconductor device wafer 30 is trimmed by the rotary tool 17 to which ultrasonic waves are applied and which rotates horizontally. As shown in fig. 5C, a concave portion of the trimming surface 35 is formed in the peripheral side surface 33.
After the edge trimming process, a thinning process of grinding the back surface 34 is performed. As a result, as shown in fig. 5D, a semiconductor device wafer 30 having high flatness and reduced thickness variation is obtained.
The embodiments of the present invention are not limited to the above embodiments, and various modifications can be made without departing from the technical spirit of the present invention.
The detailed description has been presented for purposes of illustration and description. Many modifications and variations are possible in light of the above teaching. The detailed description is not intended to be exhaustive or to limit the subject matter described herein. Although the subject matter has been described in language specific to structural features and/or methodological acts, it is to be understood that the subject matter defined in the claims is not necessarily limited to the specific features or acts described. Rather, the specific features and acts described are described as examples of implementing the claims.

Claims (5)

1. An apparatus for manufacturing a semiconductor device, comprising:
a chuck mechanism for sucking a semiconductor device wafer with a device face down by means of a bonding resin layer and a support substrate bonded to the semiconductor device wafer by means of the bonding resin layer, and horizontally rotating the semiconductor device wafer;
a rotary cutter which horizontally rotates by using a vertical spindle to trim the peripheral side surface of the semiconductor device wafer and the upper part of the bonding resin layer, the peripheral side surface being adsorbed to the chuck mechanism and horizontally rotated; and
an ultrasonic vibration device for applying ultrasonic waves to the vertical spindle,
the vertical spindle is pivotally supported by bearings provided at upper and lower portions of the vertical spindle,
the rotary cutter is connected with the vertical spindle between the bearings provided at the upper and lower portions of the vertical spindle.
2. The apparatus according to claim 1, wherein a cup-shaped grinding wheel is provided above the chuck mechanism, and the cup-shaped grinding wheel machines the back surface of the semiconductor device wafer trimmed by the rotary tool to thin the semiconductor device wafer.
3. A method for manufacturing a semiconductor device, which is used in the apparatus for manufacturing a semiconductor device according to claim 1, comprising:
a suction step of mounting a device surface of the semiconductor device wafer on an upper surface of the chuck mechanism; and
an edge trimming step, performed after the suction step,
the edge trimming process includes:
horizontally rotating the semiconductor device wafer with the chuck mechanism;
horizontally rotating the rotary cutter by using a vertical spindle to which ultrasonic waves are applied; and
and trimming the peripheral side surface of the semiconductor device wafer by using the rotary cutter.
4. The method of manufacturing a semiconductor device according to claim 3, comprising a thinning process performed after the edge trimming process, wherein the semiconductor device wafer is thinned by processing a back surface of the semiconductor device wafer by a grinding method using a cup wheel.
5. The method for manufacturing a semiconductor device according to claim 3 or 4, wherein the vicinity of the peripheral grinding wheel surface of the rotary cutter used in the edge trimming step is thinner than the semiconductor device wafer.
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