CN110835730A - 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process - Google Patents

7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process Download PDF

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CN110835730A
CN110835730A CN201810941717.4A CN201810941717A CN110835730A CN 110835730 A CN110835730 A CN 110835730A CN 201810941717 A CN201810941717 A CN 201810941717A CN 110835730 A CN110835730 A CN 110835730A
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cavity
film deposition
amorphous silicon
hwcvd
tco
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黄海宾
黄振
周浪
彭德香
任栋樑
刘超
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China Wisdom (taixing) Power Technology Co Ltd
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China Wisdom (taixing) Power Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The invention relates to a 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process, wherein a preheating feeding cavity, an intrinsic amorphous silicon film deposition HWCVD cavity, an impurity-doped amorphous silicon film deposition HWCVD cavity, a first TCO film deposition PVD cavity, a second TCO film deposition PVD cavity and a blanking cavity are sequentially connected through vacuum locks, vacuum locks are arranged at the head and the tail of the preheating feeding cavity, a moving device penetrates through the cavities from front to back, a support plate is arranged in the preheating feeding cavity, the vertical support plate is arranged on the moving device and is in a state that the vertical support plate can move in the integrated equipment from front to back, a sputtering target is arranged in the second TCO film deposition PVD cavity, and the cavities are externally connected with an ultrapure gas circuit, a heating system and a vacuumizing system. The method can effectively avoid the process of the product preparation process from being exposed to air, improve the performance of the crystalline silicon heterojunction solar cell and reduce the production cost of the crystalline silicon heterojunction solar cell.

Description

7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process
Technical Field
The invention relates to the field of efficient crystalline silicon solar cell manufacturing, in particular to a 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process for solar cell manufacturing.
Background
Currently, a class of advanced and efficient crystalline silicon solar cells is based on amorphous silicon/crystalline silicon heterojunction structures. The two very critical steps in the production technology are the deposition of an amorphous silicon-based film (comprising an intrinsic layer and a doped layer, and the material is amorphous silicon, microcrystalline silicon, nano-silicon, oxygen-doped amorphous silicon and the like) and the deposition of a transparent conductive oxide TCO layer. The deposition method of the amorphous silicon-based thin film which is commonly used is a low-temperature chemical vapor deposition method, including two methods, namely Plasma Enhanced Chemical Vapor Deposition (PECVD) and Hot Wire Chemical Vapor Deposition (HWCVD); the TCO layer is generally prepared by PVD (magnetron sputtering) method. In production, the corresponding devices of the two technologies are usually separated. Namely, the low-temperature CVD equipment is an independent system, and generally comprises a feeding and preheating cavity, an intrinsic layer deposition cavity, a doping deposition cavity (p-type or n-type), a blanking cavity and the like; the PVD equipment also comprises a feeding cavity, a preheating cavity, a film deposition cavity, a blanking cavity and the like. A feeding device and a discharging device of the silicon wafer, a conveying device for conveying the silicon wafer among different devices and the like are also needed between the CVD system and the PVD system. The overall system is very complex. Moreover, the product must be exposed to air during the transfer process between the CVD and PVD systems, so that the surface of the product is affected by water vapor, oxygen, dust and the like in the air to cause performance reduction; the operation cost is high in production, and the number of required workers is large.
Disclosure of Invention
The invention aims to provide 7-cavity vertical HWCVD-PVD integrated equipment for manufacturing the solar cell, which can effectively prevent processes of intrinsic and doped silicon-based films and TCO films from being exposed to air in the preparation process of products, improve the performance of the crystalline silicon heterojunction solar cell and reduce the production cost of the crystalline silicon heterojunction solar cell.
The technical scheme adopted by the invention is as follows: a7-cavity vertical HWCVD-PVD integrated equipment for solar cell manufacturing is characterized in that: the device comprises a preheating feeding cavity, an intrinsic amorphous silicon film deposition HWCVD cavity, a doped amorphous silicon film deposition HWCVD cavity, a first TCO film deposition PVD cavity, a second TCO film deposition PVD cavity, a third TCO film deposition PVD cavity and a blanking cavity, wherein the cavities are sequentially connected through vacuum locks, a feeding port of the preheating feeding cavity and a discharging port of the blanking cavity are also provided with vacuum locks, a moving device is connected with the cavities and the vacuum locks in a penetrating manner from front to back, the intrinsic amorphous silicon film deposition HWCVD cavity, the doped amorphous silicon film deposition HWCVD cavity, the first TCO film deposition PVD cavity, the second TCO film deposition PVD cavity and the third TCO film deposition PVD cavity are all of a vertical structure, a type carrier plate is arranged in the preheating feeding cavity, the vertical carrier plate is arranged on the moving device and can move from front to back in the integrated device, a PVD sputtering target is arranged in the second TCO film deposition PVD cavity, the cavities are externally connected with an ultra-pure gas path system and/or a heating system and/or a cooling water system and/or a vacuum pumping system.
The moving device is a pushing feeding track or a moving hanger.
The blanking cavity is externally connected with a nitrogen or clean air system.
A7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process is characterized in that an intrinsic amorphous silicon film deposition HWCVD cavity with a vertical structure, a doped amorphous silicon film deposition HWCVD cavity and a triple TCO film deposition PVD cavity with a vertical structure are adopted, the two film deposition devices are integrated, the cavities are connected through a vacuum lock structure, and products are not exposed to the atmosphere when being transferred among the cavities of equipment through a moving device.
When the device is used, each cavity is kept in a vacuum state by an external vacuum system before the silicon wafer enters. Fixing a silicon wafer to be plated on a vertically placed carrier plate; breaking vacuum of a preheating feeding cavity, opening a feeding end vacuum lock, conveying a carrier plate into the preheating feeding cavity by a mobile device, then closing the vacuum lock, vacuumizing and preheating, wherein the preheating can be completed in the cavity or by an external heating system, and after reaching a preset vacuum degree and temperature, opening a vacuum lock between the preheating feeding cavity and an intrinsic amorphous silicon thin film deposition HWCVD cavity; conveying the carrier plate into an HWCVD (tungsten-chemical vapor deposition) cavity for intrinsic amorphous silicon film deposition to close a vacuum lock; depositing an intrinsic amorphous silicon thin film layer in an intrinsic amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock between the intrinsic amorphous silicon thin film deposition HWCVD cavity and an amorphous silicon thin film doped deposition HWCVD cavity after the required vacuum degree is reached, and conveying a carrier plate into the amorphous silicon thin film doped deposition HWCVD cavity to close the vacuum lock; depositing the doped amorphous silicon thin film layer in the doped amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock behind the cavity after the required vacuum degree is reached, and sending the carrier plate into the first TCO thin film deposition PVD cavity to close the vacuum lock; adjusting the temperature to a proper temperature in the first TCO film deposition PVD cavity and preparing for starting TCO deposition, wherein the first TCO film deposition PVD cavity plays the roles of preheating before TCO deposition and adjusting a HWCVD part and a TCO deposition part; the vacuum lock among the first, second and third TCO film deposition PVD cavities is kept in an open state under the normal working condition, the sputtering target is arranged in the second TCO film deposition PVD cavity, and the support plate sequentially passes through the three cavities at a constant speed to complete the TCO film coating process; then opening a vacuum lock after the third TCO film deposition PVD cavity, and closing the vacuum lock after the carrier plate is conveyed into the blanking cavity; breaking vacuum in the blanking cavity by using nitrogen or clean air, then opening a vacuum lock at the discharge end of the blanking cavity, and moving out the carrier plate; and closing the vacuum lock, and vacuumizing the blanking cavity. Thus, the coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for the amorphous silicon/crystalline silicon heterojunction solar cell is completed.
The invention has the beneficial effects that: the intrinsic amorphous silicon, the doped amorphous silicon and the TCO film deposited on one surface of the silicon wafer in the manufacturing process of the amorphous silicon/crystalline silicon heterojunction solar cell are not exposed to air in the whole deposition process, so that the oxidation of the air to the silicon wafer film and the pollution of water vapor, dust and the like in the air to the surfaces of various structures are reduced, and the performance of the product is improved. The HWCVD and the PVD are integrally designed and are sequentially transmitted from front to back through the moving device, so that a discharging cavity of HWCVD equipment, a feeding cavity of the PVD, a transmission device and a discharging device between the two equipment are omitted, the complexity of the equipment is greatly reduced, the working procedure and the working hour are shortened, and the purchase and operation cost of production line equipment is reduced; the working procedures are reduced, so that the physical impact on the silicon wafer between the product and the loading disc is reduced, the breakage rate of the product is reduced, and the cost is further reduced.
Drawings
FIG. 1 is a front view of the present invention;
wherein: preheating the feeding cavity 1; HWCVD cavity 2 for depositing intrinsic amorphous silicon film; depositing a HWCVD cavity 3 by a doped amorphous silicon thin film; a PVD chamber 4 for deposition of a first TCO film; a PVD chamber 5 for deposition of a second TCO film; a PVD chamber 6 for deposition of a third TCO film; a blanking cavity 7; a carrier plate 8; a moving rail 9; a vacuum lock 10.
Detailed Description
The patent is further illustrated below with reference to specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the patent. Further, it will be appreciated that various changes or modifications may be made by those skilled in the art after reading the teachings herein, and such equivalents may fall within the scope of the appended claims.
FIG. 1 shows: a7-cavity vertical HWCVD-PVD integrated device for manufacturing a solar cell comprises a preheating feeding cavity 1, an intrinsic amorphous silicon film deposition HWCVD cavity 2, an impurity-doped amorphous silicon film deposition HWCVD cavity 3, a first TCO film deposition PVD cavity 4, a second TCO film deposition PVD cavity 5, a third TCO film deposition PVD cavity 6, a blanking cavity 7, a carrier plate 8, a moving rail 9 and a vacuum lock 10. The HWCVD cavities are vertical, the preheating feeding cavity 1, the intrinsic amorphous silicon film deposition HWCVD cavity 2, the doped amorphous silicon film deposition HWCVD cavity 3, the PVD cavity 4 of the first TCO film deposition, the PVD cavity 5 of the second TCO film deposition, the PVD cavity 6 of the third TCO film deposition, the blanking cavity 7 are sequentially connected from front to back and are connected with each other through a vacuum lock 10, a vacuum lock is also arranged at the feeding end of the preheating feeding cavity 1 and the discharging end of the blanking cavity 7, a vertical carrier plate 8 is arranged in the preheating feeding cavity 1, a moving track 9 for sequentially feeding the carrier plate in each cavity from front to back is arranged in the integrated equipment, and the blanking cavity 7 is broken in vacuum by nitrogen or clean air.
7, a cavity vertical HWCVD-PVD integrated silicon wafer coating production process, wherein an intrinsic amorphous silicon film deposition HWCVD cavity with a vertical structure, a doped amorphous silicon film deposition HWCVD cavity with a vertical structure and three TCO film deposition PVD cavities with a vertical structure are adopted to integrate the film deposition cavities, the cavities are connected by adopting a vacuum lock structure, each cavity is kept in a vacuum state by an external vacuum system before the silicon wafer enters, and the silicon wafer to be coated is fixed on a vertically placed carrier plate; breaking vacuum of a preheating feeding cavity, opening a feeding end vacuum lock, conveying a carrier plate into the preheating feeding cavity by a mobile device, then closing the vacuum lock, vacuumizing and preheating, wherein the preheating can be completed in the cavity or by an external heating system, and after reaching a preset vacuum degree and temperature, opening a vacuum lock between the preheating feeding cavity and an intrinsic amorphous silicon thin film deposition HWCVD cavity; conveying the carrier plate into an HWCVD (tungsten-chemical vapor deposition) cavity for intrinsic amorphous silicon film deposition to close a vacuum lock; depositing an intrinsic amorphous silicon thin film layer in an intrinsic amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock between the intrinsic amorphous silicon thin film deposition HWCVD cavity and an amorphous silicon thin film doped deposition HWCVD cavity after the required vacuum degree is reached, and conveying a carrier plate into the amorphous silicon thin film doped deposition HWCVD cavity to close the vacuum lock; depositing the doped amorphous silicon thin film layer in the doped amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock behind the cavity after the required vacuum degree is reached, and sending the carrier plate into the first TCO thin film deposition PVD cavity to close the vacuum lock; adjusting the temperature to a proper temperature in the first TCO film deposition PVD cavity and preparing for starting TCO deposition, wherein the first TCO film deposition PVD cavity plays the roles of preheating before TCO deposition and adjusting a HWCVD part and a TCO deposition part; the vacuum lock among the first, second and third TCO film deposition PVD cavities is kept in an open state under the normal working condition, the sputtering target is arranged in the second TCO film deposition PVD cavity, and the support plate sequentially passes through the three cavities at a constant speed to complete the TCO film coating process; then opening a vacuum lock after the third TCO film deposition PVD cavity, and closing the vacuum lock after the carrier plate is conveyed into the blanking cavity; breaking vacuum in the blanking cavity by using nitrogen or clean air, then opening a vacuum lock at the discharge end of the blanking cavity, and moving out the carrier plate; and closing the vacuum lock, and vacuumizing the blanking cavity, so as to finish the film coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for the amorphous silicon/crystalline silicon heterojunction solar cell.
In the embodiment, the preheating feeding cavity, each HWCVD and each PVD cavity are externally connected with an ultra-pure gas path system and/or a heating system and/or a cooling water system and/or a vacuum pumping system, and are comprehensively selected according to field production.

Claims (1)

1. A7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process is characterized in that: the intrinsic amorphous silicon thin film deposition HWCVD cavity body with a vertical structure, the doped amorphous silicon thin film deposition HWCVD cavity body with a vertical structure and three TCO thin film deposition PVD cavity bodies with a vertical structure are adopted, the thin film deposition cavity bodies are integrated, the cavity bodies are connected through a vacuum lock structure, each cavity body is kept in a vacuum state by an external vacuum system before a silicon wafer enters, and the silicon wafer needing film coating is fixed on a vertically placed carrier plate; breaking vacuum of a preheating feeding cavity, opening a feeding end vacuum lock, conveying a carrier plate into the preheating feeding cavity by a mobile device, then closing the vacuum lock, vacuumizing and preheating, wherein the preheating can be completed in the cavity or by an external heating system, and after reaching a preset vacuum degree and temperature, opening a vacuum lock between the preheating feeding cavity and an intrinsic amorphous silicon thin film deposition HWCVD cavity; conveying the carrier plate into an HWCVD (tungsten-chemical vapor deposition) cavity for intrinsic amorphous silicon film deposition to close a vacuum lock; depositing an intrinsic amorphous silicon thin film layer in an intrinsic amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock between the intrinsic amorphous silicon thin film deposition HWCVD cavity and an amorphous silicon thin film doped deposition HWCVD cavity after the required vacuum degree is reached, and conveying a carrier plate into the amorphous silicon thin film doped deposition HWCVD cavity to close the vacuum lock; depositing the doped amorphous silicon thin film layer in the doped amorphous silicon thin film deposition HWCVD cavity, pumping out residual reaction gas after deposition is finished, opening a vacuum lock behind the cavity after the required vacuum degree is reached, and sending the carrier plate into the first TCO thin film deposition PVD cavity to close the vacuum lock; adjusting the temperature to a proper temperature in the first TCO film deposition PVD cavity and preparing for starting TCO deposition, wherein the first TCO film deposition PVD cavity plays the roles of preheating before TCO deposition and adjusting a HWCVD part and a TCO deposition part; the vacuum lock among the first, second and third TCO film deposition PVD cavities is kept in an open state under the normal working condition, the sputtering target is arranged in the second TCO film deposition PVD cavity, and the support plate sequentially passes through the three cavities at a constant speed to complete the TCO film coating process; then opening a vacuum lock after the third TCO film deposition PVD cavity, and closing the vacuum lock after the carrier plate is conveyed into the blanking cavity; breaking vacuum in the blanking cavity by using nitrogen or clean air, then opening a vacuum lock at the discharge end of the blanking cavity, and moving out the carrier plate; and closing the vacuum lock, and vacuumizing the blanking cavity, so as to finish the film coating work of intrinsic amorphous silicon, heavily doped amorphous silicon and TCO on one surface of the silicon wafer for the amorphous silicon/crystalline silicon heterojunction solar cell.
CN201810941717.4A 2018-08-17 2018-08-17 7-cavity vertical HWCVD-PVD integrated silicon wafer coating production process Pending CN110835730A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114242834A (en) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 Production integration equipment and method for copper grid line heterojunction solar cell

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