CN110818397A - 陶瓷片加工方法及陶瓷片 - Google Patents
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Abstract
本发明公开了一种陶瓷片加工方法及陶瓷片,方法包括:(1)粉体制备处理,包括:(1.1)将Al2O3粉末在1350~1500℃进行预烧处理;(1.2)对Al2O3粉末进行研磨得到粒度为0.1~9μm的氧化铝陶瓷微粉;(1.3)向氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;(1.4)对氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40%,且粒度大于5μm的颗粒含量小于10%~15%;(2)成型,包括:(2.1)将粘接剂和塑化剂与氧化铝陶瓷微粉混合均匀;(2.2)制成陶瓷片生坯;(3)逐渐升温对陶瓷片生坯进行干燥与素烧,并在200~600℃的温度区间排蜡;(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。本发明旨在降低陶瓷片的不良率。
Description
技术领域
本发明涉及陶瓷加工技术领域,尤其涉及一种陶瓷片加工方法,以及通过所述陶瓷片加工方法获得的陶瓷片。
背景技术
用氧化铝材料作为原料,经过配料、成型、干燥、焙烧等工艺流程制成的器物叫做陶瓷。陶瓷片是制成的片状陶瓷器物,现有技术中,陶瓷片存在孔隙,且表面缺陷较多,导致陶瓷片不良率较高。
发明内容
本发明的主要目的在于提供一种陶瓷片加工方法,旨在降低陶瓷片的不良率。
为实现上述目的,本发明提供的陶瓷片加工方法包括如下步骤:
(1)粉体制备处理,包括:
(1.1)将Al2O3粉末在1350~1500℃进行预烧处理;
(1.2)对Al2O3粉末进行研磨得到粒度为0.1~9μm的氧化铝陶瓷微粉;
(1.3)向所述氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;
(1.4)对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40%,且粒度大于5μm的颗粒含量小于10%~15%;
(2)成型,包括:
(2.1)将粘接剂和塑化剂与所述氧化铝陶瓷微粉混合均匀;
(2.2)采用模压成型、等静压成型、注浆成型、凝胶注模成型及热压铸成型中的任一种制成陶瓷片生坯;
(3)逐渐升温对所述陶瓷片生坯进行干燥与素烧,并在200~600℃的温度区间排蜡;
(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。
优选地,所述烧结步骤之后,还包括:
(5)研磨,包括:
(5.1)在具有陶瓷片粘接平面的研磨板上均匀涂抹热熔后的蜡油,在另一平板上放置多片陶瓷片,将所述研磨板的涂覆蜡油的一面按压向平板上放置的陶瓷片,以使所述研磨板上粘接多个陶瓷片;
(5.2)将粘接了多个陶瓷片的研磨板进行冷却处理,以使多个陶瓷片分别与所述研磨板紧密粘接;
(5.3)将粘接了多个所述陶瓷片的所述研磨板固定于研磨设备,以对粘接于同一所述研磨板的各个所述陶瓷片进行整体研磨。
优选地,所述研磨步骤之后还包括:
修正尺寸、抛光和施釉。
优选地,所述烧结步骤之后还包括:
将所述陶瓷片冷却至常温。
优选地,所述陶瓷片加工方法还包括:
成品包装入库。
优选地,所述粘接剂为聚乙烯醇和石蜡,所述塑化剂为醋酸乙烯酯和羟甲基纤维素。
优选地,所述氧化铝陶瓷微粉的粒度为0.1~1μm。
优选地,预烧温度为1400~1450℃。
为实现上述目的,本发明还提供一种陶瓷片,通过如上述任一项所述的陶瓷片加工方法制得。
在本发明的技术方案中,采用1350~1500℃的预烧温度,避免温度偏低导致的陶瓷电性能降低,且避免温度过高造成的Al2O3晶粒异常长大、硬度高、不易粉碎和难以烧结,从而有利于陶瓷形成均匀结构。预烧过的Al2O3经过粉碎磨细,得到超细且活性高的Al2O3粉体,有利于获得细晶和高强度的氧化铝陶瓷,粉体颗粒越细,活性越大,有利于促进烧结,制成的陶瓷强度越高,细微粉体颗粒还可以分散由于刚玉和玻璃相线膨胀系数不同在晶界处造成的应力集中,减少开裂危险;细晶粒还能阻碍微裂纹的发展,不易造成穿晶断裂,有利于提高断裂韧性,还可提高耐磨性,从而0.1~9μm的氧化铝陶瓷微粉有利于提高陶瓷片的表面质量;研磨后的微粉由于重力、粘附力和颗粒间作用力容易产生团聚,通过均匀混合分散剂增加粉体均匀性,以减弱或消除颗粒间的作用力,减弱或消除团聚体,从而提高烧结质量。进一步地,本发明中对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40%,且粒度大于5μm的颗粒含量小于10%~15%,从而,避免细颗粒过多造成重结晶,且能避免气孔封闭在晶粒内降低陶瓷片性能,又能避免粗颗粒过多造成的难以烧结。在坯体的干燥和素烧过程中,严格控制升温速度,降低温度不均匀产生热应力造成坯体开裂,尤其是在200~600℃温区中缓慢升温以将石蜡从坯体中排除,温升速度控制在不超过10℃/min;本发明通过各个步骤及步骤中的参数控制,提高陶瓷片表面质量,且能降低开裂概率,有利于降低陶瓷片的不良率。
具体实施方式
应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
实施例一
为实现上述目的,本发明提供的陶瓷片加工方法包括如下步骤:
(1)粉体制备处理,包括:
(1.1)将Al2O3粉末在1350~1400℃进行预烧处理;
(1.2)对Al2O3粉末进行研磨得到粒度为0.1~5μm的氧化铝陶瓷微粉;
(1.3)向所述氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;
(1.4)对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于30%,且粒度大于5μm的颗粒含量小于10%;
(2)成型,包括:
(2.1)将粘接剂和塑化剂与所述氧化铝陶瓷微粉混合均匀;优选地,所述粘接剂为聚乙烯醇和石蜡,所述塑化剂为醋酸乙烯酯和羟甲基纤维素。
(2.2)采用模压成型、等静压成型、注浆成型、凝胶注模成型及热压铸成型中的任一种制成陶瓷片生坯;
(3)逐渐升温对所述陶瓷片生坯进行干燥与素烧,并在200~400℃的温度区间排蜡;
(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。
(5)将所述陶瓷片冷却至常温。
(6)研磨,包括:
(6.1)在具有陶瓷片粘接平面的研磨板上均匀涂抹热熔后的蜡油,在另一平板上放置多片陶瓷片,将所述研磨板的涂覆蜡油的一面按压向平板上放置的陶瓷片,以使所述研磨板上粘接多个陶瓷片;
(6.2)将粘接了多个陶瓷片的研磨板进行冷却处理,以使蜡油冷却后,凝固的石蜡将多个陶瓷片分别与所述研磨板紧密粘接;
(6.3)将粘接了多个所述陶瓷片的所述研磨板固定于研磨设备,以对粘接于同一所述研磨板的各个所述陶瓷片进行整体研磨。研磨的目标参数根据实际需要确定。研磨步骤现将陶瓷片整体粘接至研磨板上,一次可以装夹一块或多块研磨板进行研磨,有利于快速提升研磨速率。
(7)修正尺寸、抛光和施釉。
(8)成品包装入库。
为实现上述目的,本发明还提供一种陶瓷片,通过如上述任一项所述的陶瓷片加工方法制得。
在本发明的技术方案中,采用1350~1500℃的预烧温度,避免温度偏低导致的陶瓷电性能降低,且避免温度过高造成的Al2O3晶粒异常长大、硬度高、不易粉碎和难以烧结,从而有利于陶瓷形成均匀结构。预烧过的Al2O3经过粉碎磨细,得到超细且活性高的Al2O3粉体,有利于获得细晶和高强度的氧化铝陶瓷,粉体颗粒越细,活性越大,有利于促进烧结,制成的陶瓷强度越高,细微粉体颗粒还可以分散由于刚玉和玻璃相线膨胀系数不同在晶界处造成的应力集中,减少开裂危险;细晶粒还能阻碍微裂纹的发展,不易造成穿晶断裂,有利于提高断裂韧性,还可提高耐磨性,从而0.1~9μm的氧化铝陶瓷微粉有利于提高陶瓷片的表面质量;研磨后的微粉由于重力、粘附力和颗粒间作用力容易产生团聚,通过均匀混合分散剂增加粉体均匀性,以减弱或消除颗粒间的作用力,减弱或消除团聚体,从而提高烧结质量。进一步地,本发明中对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40%,且粒度大于5μm的颗粒含量小于10%~15%,从而,避免细颗粒过多造成重结晶,且能避免气孔封闭在晶粒内降低陶瓷片性能,又能避免粗颗粒过多造成的难以烧结。在坯体的干燥和素烧过程中,严格控制升温速度,降低温度不均匀产生热应力造成坯体开裂,尤其是在200~600℃温区中缓慢升温以将石蜡从坯体中排除,温升速度控制在不超过10℃/min;本发明通过各个步骤及步骤中的参数控制,提高陶瓷片表面质量,且能降低开裂概率,有利于降低陶瓷片的不良率。
实施例二
为实现上述目的,本发明提供的陶瓷片加工方法包括如下步骤:
(1)粉体制备处理,包括:
(1.1)将Al2O3粉末在1370~1400℃进行预烧处理;
(1.2)对Al2O3粉末进行研磨得到粒度为0.1~3μm的氧化铝陶瓷微粉;
(1.3)向所述氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;
(1.4)对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于25%,且粒度大于5μm的颗粒含量小于12%;
(2)成型,包括:
(2.1)将粘接剂和塑化剂与所述氧化铝陶瓷微粉混合均匀;优选地,所述粘接剂为聚乙烯醇和石蜡,所述塑化剂为醋酸乙烯酯和羟甲基纤维素。
(2.2)采用模压成型、等静压成型、注浆成型、凝胶注模成型及热压铸成型中的任一种制成陶瓷片生坯;
(3)逐渐升温对所述陶瓷片生坯进行干燥与素烧,并在200~300℃的温度区间排蜡;
(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。
(5)将所述陶瓷片冷却至常温。
(6)研磨,包括:
(6.1)在具有陶瓷片粘接平面的研磨板上均匀涂抹热熔后的蜡油,在另一平板上放置多片陶瓷片,将所述研磨板的涂覆蜡油的一面按压向平板上放置的陶瓷片,以使所述研磨板上粘接多个陶瓷片;
(6.2)将粘接了多个陶瓷片的研磨板进行冷却处理,以使多个陶瓷片分别与所述研磨板紧密粘接;
(6.3)将粘接了多个所述陶瓷片的所述研磨板固定于研磨设备,以对粘接于同一所述研磨板的各个所述陶瓷片进行整体研磨。
(7)修正尺寸、抛光和施釉。
(8)成品包装入库。
为实现上述目的,本发明还提供一种陶瓷片,通过如上述任一项所述的陶瓷片加工方法制得。
实施例三
为实现上述目的,本发明提供的陶瓷片加工方法包括如下步骤:
(1)粉体制备处理,包括:
(1.1)将Al2O3粉末在1400~1430℃进行预烧处理;
(1.2)对Al2O3粉末进行研磨得到粒度为0.1~2μm的氧化铝陶瓷微粉;
(1.3)向所述氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;
(1.4)对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于20%,且粒度大于5μm的颗粒含量小于14%;
(2)成型,包括:
(2.1)将粘接剂和塑化剂与所述氧化铝陶瓷微粉混合均匀;优选地,所述粘接剂为聚乙烯醇和石蜡,所述塑化剂为醋酸乙烯酯和羟甲基纤维素。
(2.2)采用模压成型、等静压成型、注浆成型、凝胶注模成型及热压铸成型中的任一种制成陶瓷片生坯;
(3)逐渐升温对所述陶瓷片生坯进行干燥与素烧,并在200~500℃的温度区间排蜡;
(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。
(5)将所述陶瓷片冷却至常温。
(6)研磨,包括:
(6.1)在具有陶瓷片粘接平面的研磨板上均匀涂抹热熔后的蜡油,在另一平板上放置多片陶瓷片,将所述研磨板的涂覆蜡油的一面按压向平板上放置的陶瓷片,以使所述研磨板上粘接多个陶瓷片;
(6.2)将粘接了多个陶瓷片的研磨板进行冷却处理,以使多个陶瓷片分别与所述研磨板紧密粘接;
(6.3)将粘接了多个所述陶瓷片的所述研磨板固定于研磨设备,以对粘接于同一所述研磨板的各个所述陶瓷片进行整体研磨。
(7)修正尺寸、抛光和施釉。
(8)成品包装入库。
为实现上述目的,本发明还提供一种陶瓷片,通过如上述任一项所述的陶瓷片加工方法制得。
以上仅为本发明的优选实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (9)
1.一种陶瓷片加工方法,其特征在于,包括如下步骤:
(1)粉体制备处理,包括:
(1.1)将Al2O3粉末在1350~1500℃进行预烧处理;
(1.2)对Al2O3粉末进行研磨得到粒度为0.1~9μm的氧化铝陶瓷微粉;
(1.3)向所述氧化铝陶瓷微粉中均匀混合分散剂减弱其中的团聚体;
(1.4)对所述氧化铝陶瓷微粉进行颗粒级配,以使粒度小于1μm的颗粒含量小于40%,且粒度大于5μm的颗粒含量小于10%~15%;
(2)成型,包括:
(2.1)将粘接剂和塑化剂与所述氧化铝陶瓷微粉混合均匀;
(2.2)采用模压成型、等静压成型、注浆成型、凝胶注模成型及热压铸成型中的任一种制成陶瓷片生坯;
(3)逐渐升温对所述陶瓷片生坯进行干燥与素烧,并在200~600℃的温度区间排蜡;
(4)烧结,在1500℃以上温度和热压20MPa的条件下进行烧结处理得到陶瓷片。
2.根据权利要求1所述的陶瓷片加工方法,其特征在于,所述烧结步骤之后,还包括:
(5)研磨,包括:
(5.1)在具有陶瓷片粘接平面的研磨板上均匀涂抹热熔后的蜡油,在另一平板上放置多片陶瓷片,将所述研磨板的涂覆蜡油的一面按压向平板上放置的陶瓷片,以使所述研磨板上粘接多个陶瓷片;
(5.2)将粘接了多个陶瓷片的研磨板进行冷却处理,以使多个陶瓷片分别与所述研磨板紧密粘接;
(5.3)将粘接了多个所述陶瓷片的所述研磨板固定于研磨设备,以对粘接于同一所述研磨板的各个所述陶瓷片进行整体研磨。
3.根据权利要求2所述的陶瓷片加工方法,其特征在于,所述研磨步骤之后还包括:
修正尺寸、抛光和施釉。
4.根据权利要求1所述的陶瓷片加工方法,其特征在于,所述烧结步骤之后还包括:
将所述陶瓷片冷却至常温。
5.根据权利要求1至4中任一项所述的陶瓷片加工方法,其特征在于,所述陶瓷片加工方法还包括:
成品包装入库。
6.根据权利要求1至4中任一项所述的陶瓷片加工方法,其特征在于,所述粘接剂为聚乙烯醇和石蜡,所述塑化剂为醋酸乙烯酯和羟甲基纤维素。
7.根据权利要求1至4中任一项所述的陶瓷片加工方法,其特征在于,所述氧化铝陶瓷微粉的粒度为0.1~1μm。
8.根据权利要求1至4中任一项所述的陶瓷片加工方法,其特征在于,预烧温度为1400~1450℃。
9.一种陶瓷片,其特征在于,通过如权利要求1至8中任一项所述的陶瓷片加工方法制得。
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