CN110783227B - Vertical reactor for wafer processing - Google Patents
Vertical reactor for wafer processing Download PDFInfo
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- CN110783227B CN110783227B CN201910674764.1A CN201910674764A CN110783227B CN 110783227 B CN110783227 B CN 110783227B CN 201910674764 A CN201910674764 A CN 201910674764A CN 110783227 B CN110783227 B CN 110783227B
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- 238000010926 purge Methods 0.000 claims abstract description 87
- 238000009413 insulation Methods 0.000 claims abstract description 86
- 239000012212 insulator Substances 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims description 89
- 239000012495 reaction gas Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 4
- 238000004378 air conditioning Methods 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 2
- 239000011796 hollow space material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 20
- 235000012431 wafers Nutrition 0.000 description 48
- 238000007664 blowing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a vertical reactor for wafer process, which improves a heat insulation structure and a purging structure of a heat insulation area so as not to influence a wafer boat area, and comprises: an inner tube, the inner space being partitioned by an upper boat region, in which a boat for wafer processing is disposed, and a lower heat insulation region for heat insulation, in which an exhaust port is formed; a heat insulating core vertically formed in a planar center in the heat insulating region; a heat insulating assembly formed with a vertical hollow inserted into the heat insulating core and having a plurality of heat insulators spaced up and down in the heat insulating region; wherein the purge gas flowing into the heat insulation region passes through the exhaust space separating the plurality of heat insulators and bypasses the heat insulation core body to be guided to the exhaust port of the inner tube.
Description
Technical Field
The present invention relates to a reactor, and more particularly, to a vertical reactor for wafer processing, in which a heat insulation structure and a purge structure of a heat insulation region are improved so as not to affect a boat region.
Background
A semiconductor process is understood to mean a semiconductor manufacturing process that performs the manufacture of a wafer. For example, a Reactor (Reactor) may be used, the Reactor utilizes a wafer boat for performing heat treatment of wafers.
The reactor performs a heat treatment process on the wafers put in, and the boat is used to put in the reactor for loading (Charge) wafers for heat treatment in units of a predetermined number (for example, 180 wafers) or to Discharge the wafers to the outside of the reactor for unloading (Discharge) the heat-treated wafers.
The reactor has a heater Outer Tube (Outer Tube), an Inner Tube (Inner Tube).
The inner tube may be divided into an upper boat area and a lower heat insulation area. The boat region is a region where the boat is loaded and the wafers loaded on the boat are heat-treated, and the heat-insulating region is a region of the boat region having a heat-insulating structure to insulate the outside from maintaining a high temperature in the wafer process.
In the wafer process, a reaction gas is supplied to a boat region at the upper part of an inner tube, and a purge gas is supplied to a heat insulation region at the lower part of the inner tube. For wafer processing, the boat area may be maintained in a high temperature and low pressure environment.
Typically, in the process, the purge gas is vented from the inner tube to the outer tube through the lower portion of the boat area where the wafers are placed in the thermally insulated region. The existing process environment is influenced by the purge gas for the wafers loaded on the lower part of the wafer boat.
Thus, wafers located away from the insulating region and wafers located near the insulating region are exposed to other process environments. The difference in process environment plays a barrier role in maintaining process stability and plays a role in reducing productivity.
Disclosure of Invention
(problems to be solved)
The present invention provides a vertical reactor for wafer processing, comprising: the purge gas in the inner space of the inner tube is discharged through the independent exhaust space while not affecting the wafers in the wafer boat area, so that a stable process environment can be maintained.
In addition, another object of the present invention is to provide a vertical reactor for wafer processing as follows: the heat-insulating structure comprises a heat-insulating core body and a heat-insulating assembly, wherein the heat-insulating core body transmits rotating force to the wafer boat, the heat-insulating assembly is inserted into the heat-insulating core body and provides an exhaust space, and the blowing structure is used for blowing gas to pass through the exhaust space and bypass the heat-insulating core body.
Another object of the present invention is to provide a vertical reactor for wafer processing, which is configured as follows: the upper and lower spaced heat insulating pieces or the heat insulation with annular horizontal channels on the outer side surface are utilized to provide an exhaust space of the heat insulating area, so that the wafer in the wafer boat area is not influenced, and the purge gas can be discharged.
Another object of the present invention is to provide a vertical reactor for wafer processing, comprising: the heat-insulating structure comprises a heat-insulating core body and a heat-insulating assembly, wherein the heat-insulating core body transmits rotating force to the wafer boat, the heat-insulating assembly is inserted into the heat-insulating core body and provides an exhaust space, and the blowing structure is used for blowing gas to pass through the exhaust space and bypass the heat-insulating piece.
Another object of the present invention is to provide a vertical reactor for wafer processing, comprising: the purge gas is supplied at a position separated from each other by the purge gas inlet at the center of the flange and the purge gas nozzle at the edge of the flange, which are combined with the driving shaft, thereby improving the purge efficiency.
(means for solving the problems)
The vertical reactor for wafer processing of the present invention comprises: an inner tube, the inner space being partitioned by an upper boat region, in which a boat for wafer processing is disposed, and a lower heat insulation region for heat insulation, in which an exhaust port is formed; a heat insulating core vertically formed in a planar center in the heat insulating region; a heat insulating assembly formed with a vertical hollow inserted into the heat insulating core and having a plurality of heat insulators spaced up and down in the heat insulating region; wherein the purge gas flowing into the heat insulation region passes through the exhaust space separating the plurality of heat insulators and bypasses the heat insulation core body to be guided to the exhaust port of the inner tube.
In addition, the vertical reactor for wafer processing of the present invention comprises: an inner tube, the inner space being partitioned by an upper boat region, in which a boat for wafer processing is disposed, and a lower heat insulation region for heat insulation, in which an exhaust port is formed; a heat insulating core vertically formed in a planar center in the heat insulating region; a heat insulation assembly formed with a vertical hollow inserted into the heat insulation core and having an outer side surface with an exhaust space formed by an annular horizontal passage; wherein the purge gas flowing into the heat insulation region passes through the exhaust space and bypasses the heat insulation member to be guided to the exhaust port of the inner tube.
(effects of the invention)
According to the invention, the heat insulation structure is improved, the exhaust space for discharging the purge air pressure of the heat insulation area is additionally arranged in the inner tube, and the purge gas of the heat insulation area is discharged through the exhaust space, so that the process environment of wafers in the wafer boat area can be prevented from being influenced by the purge gas.
Accordingly, the present invention may have an effect that the vertical reactor for wafer processing may stably maintain an environment for the process through an improved heat insulation structure and purge structure.
Drawings
FIG. 1 is a perspective view of a vertical reactor according to the present invention.
Fig. 2 is a sectional view of the portion A-A of fig. 1.
Fig. 3 is an enlarged view of a portion of fig. 2 with the heater housing removed.
Fig. 4 is a partial cross-sectional view of B-B of fig. 3.
Fig. 5 is an enlarged view of a portion corresponding to fig. 3 for another embodiment of the present invention.
Fig. 6 is a partial cross-sectional view of the C-C section of fig. 5.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The terms used in the present specification and claims should not be construed as conventional or dictionary meanings, but should be construed using meanings and concepts conforming to the technical ideas of the present invention.
The embodiments described in the present specification and the configurations shown in the drawings are preferred embodiments of the present invention, and do not represent the entire technical ideas of the present invention, and therefore various alternatives, equivalents, and modifications are possible at the application time point of the present application.
Referring to fig. 1, a vertical reactor 100 embodying the present invention is shown by way of example.
Fig. 1 is a perspective view showing the external appearance of a vertical reactor 100, in which an upper heater case 10, a lower manifold 12, and a flange 14 are confirmed.
The internal structure of the heater housing 10 illustrated in fig. 1 can be understood from fig. 2 and 3.
Referring to fig. 2 and 3, the heater case 10 has a cylindrical space inside, and a heater 11 is disposed on an inner wall. An outer tube 20 is accommodated in the cylindrical space of the heater case 10.
The outer side surface of the lower part of the outer tube 20 is provided with an exhaust tube 22. The exhaust pipe 22 provides a passage for discharging the gas inside the outer pipe 20 to the outside, and a pump (not shown) for exhausting gas is connected thereto, thereby receiving the suction force. The heater 11 of the heater case 10 is formed at an inner wall of the heater case 10 to an upper portion where the exhaust pipe 22 is formed.
An inner tube 30 is formed inside the outer tube 20, and the outer tube 20 and the inner tube 30 are coupled to the lower flange 14 through the manifold 12.
In the embodiment of the present invention, the inner space of the inner tube 30 is divided into an upper boat area, which is provided with the boat 50 for wafer process, and a heat insulation area for heat insulation.
The manifold 12 is formed at an upper portion of the flange 14, and is provided with a discharge pipe 12a for supplying the reaction gas to the inner pipe 30. The drain pipe 12a extends to the upper portion of the inner pipe 30, and further, the flange 14 may be formed with a purge gas inlet at the center thereof, and the purge gas nozzle 14a may be formed at the side portion thereof. The purge gas inlet may be understood as a space into which a driving shaft 42 described later is inserted.
The reaction gas is supplied to the boat region of the inner tube 30.
The flange 14 is formed with a purge gas inlet at the center and a purge gas nozzle 14a at the side. The purge gas inlet may be understood as a space into which a driving shaft 42 described later is inserted.
The driving shaft 42 of the driving part 40 passes through the purge gas inlet from the lower part to the upper part. The purge gas inlet of the flange 14 is coupled with a Magnetic Sealing (Magnetic Sealing) structure having a purge gas inflow space through which the purge gas is supplied to the lower center of the heat insulation region of the inner tube 30.
Then, the purge gas nozzles 14a at the edge of the flange 14 penetrate the flange 14 from the lower portion to the upper portion to supply the purge gas to the lower edge of the heat-insulating region inside the inner tube 30.
The boat 50 has a structure in which a plurality of slits for horizontally loading wafers are vertically arranged side by side, and the boat 50 is disposed in a boat area at an upper portion of the inner tube 30 for wafer processing.
Then, the lower portion of the boat 50 provided with the inner tube 30 may be understood as a heat insulation region, and is composed of the heat insulation core 60 and the heat insulation assembly.
The heat insulation core 60 has a cylindrical shape, is vertically formed at the center of a plane shape in the heat insulation region of the inner tube 30, and is formed at the upper portion of the rotating plate 70 coupled to the driving shaft 42. The heat insulating core 60 supports the upper boat 50. The heat insulating core 60 is coupled to the drive shaft 42 by a rotation plate 70, and is coupled to the rotation of the drive shaft 42, so that the boat 50 can be rotated for wafer processing.
The insulation assembly includes a plurality of insulation members 62, 64, the plurality of insulation members 62, 64 forming a vertical hollow into which the insulation core 60 is inserted and being spaced up and down in the insulation area. The heat insulator 62 is formed with a vertical hollow and is disposed at an upper portion of the heat insulating region, and is inserted into an upper portion of the heat insulating core 60 at the hollow. The heat insulator 64 is formed with a vertical hollow, and a horizontal space is formed at a lower portion of the heat insulating region to be spaced apart from the heat insulator 62, and a lower portion of the heat insulating core 60 is inserted into the hollow.
The horizontal space of the plurality of heat insulators 62, 64, which are spaced up and down, may be defined as an exhaust space through which the purge gas flowing into the heat insulation region is guided to the exhaust port 30b of the inner tube 30 by bypassing the heat insulation core 60.
The lower portions of the insulating core 60 and the insulating member 64 of the insulating assembly form the flange 14, the bottom surface of the insulating member 64 contacts the upper surface of the flange 14, and the bottom surface of the insulating core 60 is coupled to the driving shaft 42 by the rotating plate 70.
The inner side of the plurality of insulation 62, 64 is spaced from the side of the insulation core 60, while the outer side of the insulation 62 is spaced from the inner side of the inner tube 30.
The support portion 61 of a predetermined height is interposed in the exhaust space between the plurality of heat insulating members 62, 64. That is, the distance between the heat insulating members 62 and 64 is supported by the support portion 61, and the support portion 61 is formed in various column shapes having a heat insulating material. The embodiment of the present invention exemplifies that the support portion 61 is constituted by a cylinder. The supporting parts 61 are spaced at the same distance and at the same angle with the heat insulation core 60 as the center.
Then, the supporting portion 61 is constituted or assembled integrally with the upper and lower heat insulators 62, 64. In the case where the heat insulators 62, 64 are integrally formed by the support portion 61, the heat insulating assembly may be formed by one module.
With the above configuration, the purge gas flowing in through the purge gas nozzle 14a on the outer side surface of the heat insulator 64 is guided to the exhaust space between the heat insulators 62, 64 along the outer side surface of the heat insulator 64. Then, the purge gas flowing in through the purge gas inlet corresponding to the hollow flange 14 of the heat insulator 64 is guided to the exhaust space between the heat insulators 62, 64 through the lower portion of the heat insulator core 60 and the space between the hollow inner side surface of the heat insulator 64 and the side surface of the heat insulator core 60.
The inner tube 30 may have a plurality of exhaust ports 30a vertically aligned in the boat area, and may have exhaust ports 30b located at positions where at least a part of the exhaust ports are facing the inlet of the exhaust pipe 22 in the heat insulating area.
With the above structure, the reaction gas supplied to the boat area at the upper portion of the inner tube 30 is utilized after the wafer process and can be discharged to the outer tube 20 through the gas outlet 30a formed at the boat area. At this time, since the purge gas is supplied to the heat insulation region, the reaction gas of the boat region is insulated from flowing into the heat insulation region.
Then, as shown by arrows in fig. 3, the purge gas supplied to the heat insulation region through the purge gas inlet or the purge gas nozzle 14a of the flange 14 at the lower portion of the inner tube 30 rises upward along the interval gap between the inner side surface of the inner tube 30 and the outer side surface of the heat insulator 64 and the side surface of the heat insulating core 60 and the interval gap between the inner side surfaces of the heat insulator 64. The purge gas may then be discharged through the exhaust port 30b of the inner tube 30 after bypassing the heat insulation core 60 through the exhaust space.
The purge gas of the insulation region flows horizontally through the discharge space between the insulation members 62, 64 and is discharged through the exhaust port 30b of the inner tube, wherein the exhaust space between the insulation members 62, 64 has a sufficient exhaust volume. The purge gas is prevented from flowing to the upper side of the upper heat insulator 62 by the exhaust space.
Then, a space is formed between the inner tube 30 and the outer tube 20, and the gas discharged through the plurality of exhaust ports 30a, 30b flows downward and is then discharged through the exhaust tube 22.
Here, the exhaust space between the heat insulators 62, 64 may be formed at the same height as the exhaust port 30b of the heat insulation region of the inner tube 30.
In addition, the exhaust port 30b of the inner tube 30 is preferably formed at a height at which at least a portion thereof faces the inlet of the exhaust pipe 22, wherein the exhaust pipe 22 is formed at a lower portion of the inner wall of the outer tube 20 accommodating the inner tube 30; the exhaust port 30b of the inner tube 30 is preferably formed at a position higher than the inlet of the exhaust pipe 22 of the inner wall of the outer tube.
As described above, the exhaust space between the heat insulators 62 and 64, the exhaust port 30b of the inner tube 30, and the inlet of the exhaust pipe 22 of the outer tube 20 are horizontally communicated, so that the purge gas can be smoothly discharged; the horizontal passage of the purge gas can be understood with reference to the arrows of fig. 4, wherein fig. 4 is a sectional view illustrating a planar state of the portion B-B of fig. 3.
Accordingly, embodiments of the present invention additionally form an exhaust space between the heat insulators 62, 64, so that the purge gas of the heat insulating gas does not rise toward the boat area while the process is being performed, but is discharged to the inner tube 30 through the horizontal passage and the exhaust port 30b.
In addition, the heat insulating core 60 is configured to transmit the rotation force to the boat 50.
Accordingly, the present invention can provide a purge structure that prevents purge gas, which is performing a wafer process, from affecting an upper boat area by the above-described heat insulating structure in which the heat insulating core 60 and the heat insulators 62 and 64 are combined, and as a result, a stable process environment can be maintained for the wafer.
On the other hand, as shown in fig. 5 and 6, the present invention can form an exhaust space. In fig. 5 and 6, the same reference numerals are used for the same components as those in fig. 3 and 4, and repeated descriptions of the repeated components are omitted.
In the embodiment of fig. 5 and 6, compared with fig. 3 and 4, a heat insulator 66 having a horizontal passage 68 is provided instead of the heat insulators 62, 64 formed of heat insulating members.
The heat insulator 66 of fig. 5 and 6 is formed with a vertical hollow inserted into the heat insulating core 60, and has an exhaust space formed by an annular horizontal passage 68 on the outer side. The horizontal channel 68 means that a recess having a uniform width is horizontally formed at the side.
With the above-described structure, the purge gas flowing into the heat-insulating region passes through the exhaust space of the horizontal passage 68 and bypasses the heat insulator 66, and is not raised upward, but is guided to the exhaust port 30b of the inner tube 30 as shown by arrows in fig. 5 and 6.
Although not shown, the heat shield 66 has more than two parallel horizontal passages 68 that form an exhaust space. In this case, the horizontal channels 68 of each layer may buffer the rising purge gas, and the purge gas may be dispersed and discharged through more than two parallel horizontal channels 68.
Then, as in fig. 1 to 4, the exhaust space of the above-described passage 68 preferably also faces the exhaust port 30b of the inner tube 30. In addition, the exhaust port 30b of the inner pipe 30 is formed at a height at which at least a portion thereof faces the inlet of the exhaust pipe 22 formed at the lower portion of the outer pipe 20, preferably at a position higher than the inlet of the exhaust pipe 22 of the outer pipe 20, wherein the outer pipe 20 accommodates the inner pipe 30.
Then, a plurality of through-holes (not shown) connected to the hollow are formed in the passage 68 forming the exhaust space, in which case the hollow purge gas can be smoothly discharged.
The embodiment of the invention is constructed as described above, and further, the purge gas is supplied to the lower portion of the heat insulation region during the process, not rising to the boat region, but being smoothly discharged through the exhaust space of the heat insulation region.
Therefore, the vertical reactor for wafer processing according to the present invention can prevent the purge gas of the heat insulation region from affecting the wafers of the wafer boat region during the exhausting process, and thus can stably maintain the environment for wafer processing.
Claims (13)
1. A vertical reactor for wafer processing, comprising:
an inner tube, the inner space being partitioned by an upper boat region, in which a boat for wafer processing is disposed, and a lower heat insulation region for heat insulation, in which an exhaust port is formed;
a heat insulating core vertically formed in a planar center of the heat insulating region, and transmitting a rotational force to the boat;
a heat insulating member having a plurality of heat insulating members and forming a gas discharge space in the heat insulating region, the gas discharge space being a horizontal space formed by vertically spacing the plurality of heat insulating members;
an outer tube accommodating the inner tube and formed with an exhaust pipe at a lower portion;
a flange formed at a lower portion of the heat insulation core and the heat insulation assembly and having a purge gas nozzle through which a purge gas is supplied to a lower portion of the heat insulation region; a kind of electronic device with high-pressure air-conditioning system
A manifold provided with a drain pipe extending to an upper portion of the inner pipe to supply a reaction gas to the upper boat region of the inner pipe, wherein the outer pipe and the inner pipe are coupled to the flange through the manifold,
the exhaust space and the exhaust port of the inner tube face each other,
the exhaust port is formed at a height at which at least a portion thereof faces the inlet of the exhaust pipe of the outer pipe,
the purge gas flowing into the insulation region passes through the exhaust space of the insulation assembly and bypasses the insulation core, being guided to the exhaust pipe of the outer pipe through the exhaust port of the inner pipe.
2. The vertical reactor for wafer processing according to claim 1, wherein,
the flange has a planar center and a purge gas inlet, and the purge gas nozzle is formed at a side portion thereof, and the purge gas flowing in from the center and the side portion through the purge gas inlet and the purge gas nozzle is supplied to a lower portion of the heat insulation region.
3. The vertical reactor for wafer processing according to claim 2, wherein,
a driving shaft penetrating the purge gas inlet, being coupled to the heat insulating core shaft, transmitting a rotational force to the heat insulating core, and being coupled to the purge gas inlet by a magnetic sealing structure having a purge gas inflow space;
the purge gas is supplied to a lower portion of the heat insulation region through the purge gas inflow space and the purge gas nozzle.
4. The vertical reactor for wafer processing according to claim 1, wherein,
the heat insulation assembly has:
a first heat insulator having a first vertical hollow formed therein and disposed at an upper portion of the heat insulating region, the first hollow being inserted into an upper portion of the heat insulating core; and
and a second heat insulator formed with a vertical second hollow and disposed at a lower portion of the heat insulating region to form the exhaust space at a distance from the first heat insulator, the second hollow being inserted into a lower portion of the heat insulating core.
5. The vertical reactor for wafer processing according to claim 4, further comprising:
a support part interposed in the exhaust space, spaced apart from the heat insulating core by the same distance and by the same angle, and having a predetermined height;
the heat insulating assembly is composed of a single module, and the module is formed by integrating the first heat insulating member, the supporting part and the second heat insulating member.
6. A vertical reactor for wafer processing according to claim 4, wherein,
the flange is formed at the lower part of the heat insulation core body and the second heat insulation piece;
a purge gas inlet is formed in the planar center of the flange, and the purge gas nozzle is formed at the edge;
the first purge gas flowing into the lower portion of the heat insulation region through the purge gas nozzle is guided to the exhaust space through a first interval space between the outer side surface of the second heat insulation member and the inner side of the inner tube;
a second purge gas flowing into a lower portion of the heat insulation region through the purge gas inlet is guided to the exhaust space through a second interval space between the second hollow side surface of the second heat insulator and the side surface of the heat insulation core.
7. The vertical reactor for wafer processing according to claim 1, wherein,
the exhaust port of the inner tube is located at a higher position than the inlet of the exhaust pipe of the outer tube.
8. A vertical reactor for wafer processing, comprising:
an inner tube, the inner space being partitioned by an upper boat region, in which a boat for wafer processing is disposed, and a lower heat insulation region for heat insulation, in which an exhaust port is formed;
a heat insulating core vertically formed at a planar center in the heat insulating region, and transmitting a rotational force to the boat;
a heat insulation assembly formed with a vertical hollow inserted into the heat insulation core and having an outer side surface with an exhaust space formed by an annular horizontal passage;
an outer tube accommodating the inner tube and formed with an exhaust pipe at a lower portion;
a flange formed at a lower portion of the heat insulation core and the heat insulation assembly and having a purge gas nozzle through which a purge gas is supplied to a lower portion of the heat insulation region; a kind of electronic device with high-pressure air-conditioning system
A manifold provided with a drain pipe extending to an upper portion of the inner tube to supply a reaction gas to the upper boat region of the inner tube,
wherein the outer tube and the inner tube are joined to the flange by the manifold,
the exhaust space and the exhaust port of the inner tube face each other,
the exhaust port is formed at a height at which at least a portion thereof faces the inlet of the exhaust pipe of the outer pipe,
the purge gas flowing into the insulation region passes through the exhaust space of the insulation assembly and bypasses the insulation assembly, and is guided to the exhaust pipe of the outer pipe through the exhaust port of the inner pipe.
9. The vertical reactor for wafer processing according to claim 8, wherein,
the flange has a planar center and a purge gas inlet, and the purge gas nozzle is formed at a side portion thereof, and the purge gas flowing in from the center and the side portion is supplied to a lower portion of the heat insulation region through the purge gas inlet and the purge gas nozzle.
10. The vertical reactor for wafer processing according to claim 9, wherein,
a driving shaft penetrating the purge gas inlet, being coupled to the heat insulation core shaft, transmitting a rotational force to the heat insulation core, and being coupled to the purge gas inlet by a magnetic sealing structure having a purge gas inflow space;
the purge gas is supplied to a lower portion of the heat insulation region through the purge gas inflow space and the purge gas nozzle.
11. The vertical reactor for wafer processing according to claim 8, wherein,
the heat insulating assembly is formed with two or more horizontal passages as the exhaust space.
12. The vertical reactor for wafer processing according to claim 8, wherein,
the exhaust port of the inner tube is located at a higher position than the inlet of the exhaust pipe of the outer tube.
13. The vertical reactor for wafer processing according to claim 8, wherein,
a plurality of through-holes connected to the hollow space are formed in the exhaust space.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0086919 | 2018-07-26 | ||
| KR1020180086919A KR102412459B1 (en) | 2018-07-26 | 2018-07-26 | Vertical reactor for wafer processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110783227A CN110783227A (en) | 2020-02-11 |
| CN110783227B true CN110783227B (en) | 2023-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910674764.1A Active CN110783227B (en) | 2018-07-26 | 2019-07-25 | Vertical reactor for wafer processing |
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| Country | Link |
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| KR (1) | KR102412459B1 (en) |
| CN (1) | CN110783227B (en) |
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| CN1992192A (en) * | 2005-12-28 | 2007-07-04 | 东京毅力科创株式会社 | Vertical boat and vertical heat processing apparatus for semiconductor process |
| CN102191473A (en) * | 2010-03-10 | 2011-09-21 | 东京毅力科创株式会社 | Vertical heat treatment apparatus and method for cooling the apparatus |
| CN107851578A (en) * | 2015-09-04 | 2018-03-27 | 株式会社日立国际电气 | The manufacture method of reaction tube, lining processor and semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0179170B1 (en) * | 1995-07-11 | 1999-04-15 | 문정환 | Management of adhesion in seniconductor device |
| WO2012011423A1 (en) * | 2010-07-22 | 2012-01-26 | 株式会社日立国際電気 | Device for treating substrate and method for producing semiconductor device |
| TWI611043B (en) * | 2015-08-04 | 2018-01-11 | Hitachi Int Electric Inc | Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium |
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2019
- 2019-07-25 CN CN201910674764.1A patent/CN110783227B/en active Active
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| JPH08222556A (en) * | 1995-02-14 | 1996-08-30 | Tokyo Electron Ltd | Heat treatment equipment |
| CN1992192A (en) * | 2005-12-28 | 2007-07-04 | 东京毅力科创株式会社 | Vertical boat and vertical heat processing apparatus for semiconductor process |
| CN102191473A (en) * | 2010-03-10 | 2011-09-21 | 东京毅力科创株式会社 | Vertical heat treatment apparatus and method for cooling the apparatus |
| CN107851578A (en) * | 2015-09-04 | 2018-03-27 | 株式会社日立国际电气 | The manufacture method of reaction tube, lining processor and semiconductor devices |
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| CN110783227A (en) | 2020-02-11 |
| KR102412459B1 (en) | 2022-06-23 |
| KR20200012089A (en) | 2020-02-05 |
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