CN110779782A - PCB micro-section analysis sample preparation method - Google Patents

PCB micro-section analysis sample preparation method Download PDF

Info

Publication number
CN110779782A
CN110779782A CN201911142639.2A CN201911142639A CN110779782A CN 110779782 A CN110779782 A CN 110779782A CN 201911142639 A CN201911142639 A CN 201911142639A CN 110779782 A CN110779782 A CN 110779782A
Authority
CN
China
Prior art keywords
sample wafer
polishing
pcb
glue
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201911142639.2A
Other languages
Chinese (zh)
Other versions
CN110779782B (en
Inventor
董元佳
陶刚
马盼盼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Three Hundred Million Detection Technology Co Ltd
Original Assignee
Jiangsu Three Hundred Million Detection Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Three Hundred Million Detection Technology Co Ltd filed Critical Jiangsu Three Hundred Million Detection Technology Co Ltd
Priority to CN201911142639.2A priority Critical patent/CN110779782B/en
Publication of CN110779782A publication Critical patent/CN110779782A/en
Application granted granted Critical
Publication of CN110779782B publication Critical patent/CN110779782B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32Polishing; Etching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2866Grinding or homogeneising
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873Cutting or cleaving

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

The invention relates to the field of printed circuit boards, in particular to a PCB micro-section analysis sample preparation method, which comprises the following steps: s1, cutting and sampling the PCB by a diamond saw to obtain a sample wafer; s2, performing glue pouring treatment on the obtained sample wafer; s3, grinding the sample wafer after glue pouring on a high-speed turntable of a grinding tester by using the cutting force of sand paper; s4, polishing the sample wafer by adopting a polishing machine matched with flocking polishing cloth; and S5, cleaning and wiping the polished surface, then carrying out hydrochloric acid etching treatment, dipping the cotton swab in the etching solution, lightly wiping the surface of the slice for 2-3 seconds, and then wiping the slice to obtain the polishing solution. According to the invention, the sample wafer is obtained by cutting the diamond saw, and the diamond saw generates smaller stress on the PCB, so that the phenomenon of board explosion of the PCB due to large stress is avoided; meanwhile, the sample wafer is etched by hydrochloric acid, the hydrochloric acid etching effect is obvious, and the sample wafer is not easy to corrode.

Description

PCB micro-section analysis sample preparation method
Technical Field
The invention relates to the field of Printed Circuit Boards (PCBs), in particular to a PCB microtome analysis sample preparation method.
Background
In the production process of the printed circuit board, the occurrence and the solution of the product quality problem and the improvement of the manufacturing process need to use observation of the micro-slices as the basis for research and judgment, the good and the bad performance of the micro-slices, and the high reduction degree of the micro-slices is a key factor for judging and researching the quality and the manufacturing process of the PCB.
The conventional PCB slicing manufacturing method generally comprises the following six steps: sampling, sealing glue, grinding, polishing and micro-etching, then carrying out photographing detection, and observing the hole wall of the PCB slice by using the photographed picture so as to judge the quality of the PCB and the problems in the manufacturing process.
Wherein, the sampling is related to the quality of the PCB slice in the manufacturing process of the PCB slice. In the existing manufacturing method, the situation of uneven stress can occur in the cutting and sawing process of the sampling sheet, so that the PCB board edge is easy to be layered, is notched, and has the problems that the sampling trimming edge is not parallel to the horizontal axis of the hole to be detected.
Secondly, the glue sealing in the PCB slice manufacturing process often causes the sample wafer solidification speed to be too fast due to unreasonable reagent proportion, so that bubbles in the glue are difficult to remove, and the quality and the detection result of the sample wafer are influenced.
Finally, the microetching in the manufacturing process of the PCB slices mostly adopts ammonia water and hydrogen peroxide to mix to prepare microetching liquid, the copper surface obtained by the microetching liquid is relatively fine and smooth in crystallization, the tin-lead surface is clean, the sample wafer is easily corroded, and the quality and the detection result of the sample wafer are further influenced.
Disclosure of Invention
The invention aims to provide a PCB microtome analysis sample preparation method.
The purpose of the invention is realized by the following technical scheme: a PCB microtome analysis sample preparation method comprises the following steps,
s1, cutting and sampling the PCB by a diamond saw to obtain a sample wafer;
s2, performing glue pouring treatment on the obtained sample wafer, uniformly mixing the crystal glue, the curing agent and the catalyst in a certain proportion, pouring the mixture into a glue box filled with the sample wafer, placing the glue box under the negative pressure condition of 0.8-1.0 MPa for storage for 5-10 min, and then taking out the glue box to naturally solidify the crystal glue;
s3, grinding the sample wafer after glue pouring on a high-speed turntable of a grinding tester by using the cutting force of sand paper;
s4, polishing the sample wafer by adopting a polishing machine matched with flocking polishing cloth, and adding a carborundum polishing agent as a polishing auxiliary agent, wherein the rotating speed of the polishing machine is 200-300 r/min;
and S5, cleaning and wiping the polished surface, then carrying out hydrochloric acid etching treatment, dipping the cotton swab in the etching solution, lightly wiping the surface of the slice for 2-3 seconds, and then wiping the slice to obtain the polishing solution.
The invention is further configured to: the ratio of the crystal glue, the curing agent and the catalyst in the step S2 is 100: 0.5-1: 0.5 to 1.
The invention is further configured to: the sandpaper used in step S3 is numbered and sequenced as follows:
I) firstly, roughly grinding a sample wafer by using 120-mesh sand paper until two rows of hole walls of the through holes are about to appear;
II) grinding the surface of the inclined ground surface again by using 450-mesh abrasive paper until an indication line preset in the center of the hole appears, and performing servo-correction to correct the inclined ground surface;
III) sequentially adopting 1500 meshes, 3000 meshes and 4500 meshes of fine sand paper to grind the sample wafer to eliminate the scars on the cut surface so as to reduce the polishing time and increase the true flat effect.
The invention is further configured to: in step S5, the etching solution is prepared by uniformly mixing 2ml of 5% hydrochloric acid and 50ml of deionized water.
Compared with the prior art, the invention provides a PCB microtome analysis sample preparation method, which has the following beneficial effects:
1. according to the invention, the sample wafer is obtained by cutting the diamond saw, and compared with cutting tools such as a jewel saw, a miniature band saw, an abrasive wheel saw and the like, the diamond saw generates smaller stress on the PCB, so that the phenomenon of board explosion of the PCB due to large stress is avoided;
2. the ratio of the crystal glue, the curing agent and the catalyst used in the glue filling process can avoid the problem that bubbles are difficult to remove due to high curing speed of the sample wafer, and is beneficial to manufacturing the transparent bubble-free sample wafer;
3. in the invention, the sample wafer is ground by adopting the 120-mesh, 450-mesh, 1500-mesh, 3000-mesh and 4000-mesh combined sand paper, so that the grinding efficiency and quality are improved;
4. according to the invention, the sample wafer is etched by using hydrochloric acid, and compared with an etching solution prepared by using ammonia water and hydrogen peroxide, the hydrochloric acid etching effect is obvious, and the sample wafer is not easy to corrode.
Detailed Description
Example (b): the embodiment provides a PCB microtome analysis sample preparation method, which comprises the following steps:
s1, cutting and sampling at any position on the PCB by a diamond saw to obtain a sample wafer;
s2, performing glue filling treatment on the obtained sample, vertically placing the sample into a glue box, and mixing the reagents in a ratio of 100: 1: 0.5 of crystal glue, curing agent and catalyst are uniformly mixed and poured into a glue box filled with a sample wafer, the sample can be crystal glue (matched with the curing agent and the catalyst) sold by Shenzhen Yong and Fengshen Limited, the glue box is placed in a vacuum drier and is stored for 5-10 min under the negative pressure condition of 0.8-1.0 MPa, and then the glue box is taken out to naturally solidify the crystal glue for 15-20 min;
s3, grinding the sample wafer after glue pouring on a high-speed turntable of a grinding tester by using the cutting force of sand paper; the sand paper used therein has the following numbers and sequence:
I) firstly, roughly grinding a sample wafer by using 120-mesh sand paper until two rows of hole walls of the through holes are about to appear;
II) grinding the surface of the inclined ground surface again by using 450-mesh abrasive paper until an indication line preset in the center of the hole appears, and performing servo-correction to correct the inclined ground surface;
III) sequentially adopting 1500-mesh, 3000-mesh and 4500-mesh fine sand paper to grind the sample wafer to eliminate the scars on the cut surface so as to reduce the polishing time and increase the true flat effect;
s4, polishing the sample wafer by adopting a polishing machine matched with flocking polishing cloth, and adding a carborundum polishing agent as a polishing auxiliary agent, wherein the rotating speed of the polishing machine is 200-300 r/min;
and S5, cleaning and wiping the polished surface, then carrying out hydrochloric acid etching treatment, uniformly mixing 2ml of 5% hydrochloric acid and 50ml of deionized water to obtain hydrochloric acid etching solution, dipping the etching solution by using a cotton swab, lightly wiping the surface of the slice for 2-3 seconds, and then wiping the slice to dry.
The foregoing is a detailed description of the invention, which is described in greater detail and not intended to limit the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention, and that such obvious alternatives fall within the scope of the invention.

Claims (4)

1. A PCB microtome analysis sample preparation method is characterized by comprising the following steps:
s1, cutting and sampling the PCB by a diamond saw to obtain a sample wafer;
s2, performing glue pouring treatment on the obtained sample wafer, uniformly mixing the crystal glue, the curing agent and the catalyst in a certain proportion, pouring the mixture into a glue box filled with the sample wafer, placing the glue box under the negative pressure condition of 0.8-1.0 MPa for storage for 5-10 min, and then taking out the glue box to naturally solidify the crystal glue;
s3, grinding the sample wafer after glue pouring on a high-speed turntable of a grinding tester by using the cutting force of sand paper;
s4, polishing the sample wafer by adopting a polishing machine matched with flocking polishing cloth, and adding a carborundum polishing agent as a polishing auxiliary agent, wherein the rotating speed of the polishing machine is 200-300 r/min;
and S5, cleaning and wiping the polished surface, then carrying out hydrochloric acid etching treatment, dipping the cotton swab in the etching solution, lightly wiping the surface of the slice for 2-3 seconds, and then wiping the slice to obtain the polishing solution.
2. The PCB microtome analysis sample preparation method of claim 1, wherein the ratio of the reagents of the crystal gel, the curing agent and the catalyst in step S2 is 100: 0.5-1: 0.5 to 1.
3. The method as claimed in claim 1, wherein the sandpaper used in step S3 has the following numbers and sequence:
I) firstly, roughly grinding a sample wafer by using 120-mesh sand paper until two rows of hole walls of the through holes are about to appear;
II) grinding the surface of the inclined ground surface again by using 450-mesh abrasive paper until an indication line preset in the center of the hole appears, and performing servo-correction to correct the inclined ground surface;
III) sequentially adopting 1500 meshes, 3000 meshes and 4500 meshes of fine sand paper to grind the sample wafer to eliminate the scars on the cut surface so as to reduce the polishing time and increase the true flat effect.
4. The PCB microtome analysis and sample preparation method of claim 1, wherein the etching solution in step S5 is prepared by uniformly mixing 2ml of 5% hydrochloric acid and 50ml of deionized water.
CN201911142639.2A 2019-11-20 2019-11-20 PCB micro-slice analysis sample preparation method Active CN110779782B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911142639.2A CN110779782B (en) 2019-11-20 2019-11-20 PCB micro-slice analysis sample preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911142639.2A CN110779782B (en) 2019-11-20 2019-11-20 PCB micro-slice analysis sample preparation method

Publications (2)

Publication Number Publication Date
CN110779782A true CN110779782A (en) 2020-02-11
CN110779782B CN110779782B (en) 2024-02-27

Family

ID=69391967

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911142639.2A Active CN110779782B (en) 2019-11-20 2019-11-20 PCB micro-slice analysis sample preparation method

Country Status (1)

Country Link
CN (1) CN110779782B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111537312A (en) * 2020-06-18 2020-08-14 西安微电子技术研究所 Metallographic test sample and manufacturing method thereof
CN111879579A (en) * 2020-06-16 2020-11-03 深圳市大族数控科技有限公司 Slice manufacturing method
CN113235092A (en) * 2021-05-08 2021-08-10 九江德福科技股份有限公司 Micro-etching solution for copper foil slice observation, preparation method thereof and micro-etching method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3624420C1 (en) * 1986-07-18 1987-04-02 Siemens Ag Process for producing a microsection
CN1063319A (en) * 1991-01-15 1992-08-05 机械电子工业部第十五研究所 Preparation method of thin copper-clad invar sheets
CN102186308A (en) * 2011-03-11 2011-09-14 深圳市崇达电路技术股份有限公司 Fabricating method for micro-slice and vacuuming device for fabricating micro-slice
CN102539204A (en) * 2011-10-19 2012-07-04 深圳市金洲精工科技股份有限公司 Method for manufacturing printed circuit board (PCB) section and PCB section
CN103698152A (en) * 2013-12-13 2014-04-02 电子科技大学 Method for preparing gold-phase section samples aiming at embedded printed-circuit board
CN106338413A (en) * 2016-08-29 2017-01-18 广东工业大学 Making method of PCB half-hole section
CN107290207A (en) * 2017-06-06 2017-10-24 华南理工大学 A kind of material testing apparatus based on AFM and electrodynamics stretching-machine
CN109397424A (en) * 2018-09-18 2019-03-01 奥士康精密电路(惠州)有限公司 A kind of method of bakelite plate renewable resource utilization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102256449A (en) * 2011-06-17 2011-11-23 山东三新电子有限公司 Organic soldering protective film manufacturing process for naked copper printed board
CN105555037A (en) * 2016-02-02 2016-05-04 东莞翔国光电科技有限公司 Manufacturing process for PCB (printed circuit board) with micropore structure
CN108575058A (en) * 2017-03-07 2018-09-25 惠州中京电子科技有限公司 A kind of half bore plate producing process
CN107770966A (en) * 2017-10-31 2018-03-06 广东骏亚电子科技股份有限公司 A kind of outer layer manufacturing method thereof of pcb board

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3624420C1 (en) * 1986-07-18 1987-04-02 Siemens Ag Process for producing a microsection
CN1063319A (en) * 1991-01-15 1992-08-05 机械电子工业部第十五研究所 Preparation method of thin copper-clad invar sheets
CN102186308A (en) * 2011-03-11 2011-09-14 深圳市崇达电路技术股份有限公司 Fabricating method for micro-slice and vacuuming device for fabricating micro-slice
CN102539204A (en) * 2011-10-19 2012-07-04 深圳市金洲精工科技股份有限公司 Method for manufacturing printed circuit board (PCB) section and PCB section
CN103698152A (en) * 2013-12-13 2014-04-02 电子科技大学 Method for preparing gold-phase section samples aiming at embedded printed-circuit board
CN106338413A (en) * 2016-08-29 2017-01-18 广东工业大学 Making method of PCB half-hole section
CN107290207A (en) * 2017-06-06 2017-10-24 华南理工大学 A kind of material testing apparatus based on AFM and electrodynamics stretching-machine
CN109397424A (en) * 2018-09-18 2019-03-01 奥士康精密电路(惠州)有限公司 A kind of method of bakelite plate renewable resource utilization

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
杨根林: "SMT电子组件及焊点的失效判定与切片金相分析", 《2012中国高端SMT学术会议论文集》 *
杨根林: "SMT电子组件及焊点的失效判定与切片金相分析", 《2012中国高端SMT学术会议论文集》, 21 November 2012 (2012-11-21), pages 2 *
袁建文等: "基于振镜扫描的光纤激光无铅钎焊QFP器件的技术研究", 《中国激光》 *
袁建文等: "基于振镜扫描的光纤激光无铅钎焊QFP器件的技术研究", 《中国激光》, vol. 50, 31 December 2013 (2013-12-31), pages 091406 - 1 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111879579A (en) * 2020-06-16 2020-11-03 深圳市大族数控科技有限公司 Slice manufacturing method
CN111537312A (en) * 2020-06-18 2020-08-14 西安微电子技术研究所 Metallographic test sample and manufacturing method thereof
CN113235092A (en) * 2021-05-08 2021-08-10 九江德福科技股份有限公司 Micro-etching solution for copper foil slice observation, preparation method thereof and micro-etching method

Also Published As

Publication number Publication date
CN110779782B (en) 2024-02-27

Similar Documents

Publication Publication Date Title
CN110779782A (en) PCB micro-section analysis sample preparation method
JP2894153B2 (en) Method and apparatus for manufacturing silicon wafer
CN106338413B (en) Manufacturing method of PCB (printed circuit board) semi-hole slice
SG185085A1 (en) Method for polishing silicon wafer and polishing liquid therefor
CN103033403A (en) Preparation method of sheet metal film sample
KR100572556B1 (en) Method for Processing a Semiconductor Wafer Including Back Side Grinding
CN103072073A (en) Polishing process capable of maintaining long service life of silicon wafer polished section minority carrier
US20060252272A1 (en) Method of processing silicon wafer
CN101656193A (en) Technique for processing silicon chip
CN102607916A (en) Preparation method of silicon chip metallographic specimen
CN102019582A (en) Polishing process of 8-inch polished wafers doped with silicon lightly
CN105177716A (en) N-type mono-crystal reclaimed material cleaning technology
JPS6296400A (en) Production of wafer
CN102709170A (en) Method for processing surface of silicon wafer for measuring minority carrier lifetime
JP2011029355A (en) Method of manufacturing semiconductor wafer with laser mark
CN110297006B (en) Sample preparation method for observing crystal orientation of Al-metalized inner crystal grains of IGBT chip
CN103014876A (en) Processing method for single-cut corrosion slices of monocrystalline silicon wafer
CN110587837A (en) Large-size silicon wafer cutting process
CN105762062B (en) A kind of gallium arsenide semiconductor substrate wet-etching technology
CN112745991B (en) Degumming agent and preparation method and application thereof
CN106733876B (en) A kind of cleaning method of the crystal silicon chip of Buddha's warrior attendant wire cutting
JP2006278701A (en) Manufacturing method for semiconductor wafer
CN113235092A (en) Micro-etching solution for copper foil slice observation, preparation method thereof and micro-etching method
CN102732969A (en) Crystal bar surface nanocystalized process and wafer manufacture method
JP2007013012A (en) Beveling method of end face of silicon wafer for solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant