CN110767637A - Press-fitting structure applied to crimping type MOSFET - Google Patents

Press-fitting structure applied to crimping type MOSFET Download PDF

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Publication number
CN110767637A
CN110767637A CN201810829497.6A CN201810829497A CN110767637A CN 110767637 A CN110767637 A CN 110767637A CN 201810829497 A CN201810829497 A CN 201810829497A CN 110767637 A CN110767637 A CN 110767637A
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CN
China
Prior art keywords
copper block
circuit board
type mosfet
crimping type
press
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Pending
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CN201810829497.6A
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Chinese (zh)
Inventor
陈政宇
曾嵘
赵彪
余占清
刘佳鹏
周文鹏
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Tsinghua University
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Tsinghua University
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Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN201810829497.6A priority Critical patent/CN110767637A/en
Priority to EP18850023.5A priority patent/EP3678173A4/en
Priority to PCT/CN2018/103750 priority patent/WO2019042446A1/en
Publication of CN110767637A publication Critical patent/CN110767637A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A press-fitting structure applied to a crimping type MOSFET comprises a first copper block, an elastic structure, the crimping type MOSFET, a circuit board and a second copper block. Wherein, a plurality of crimping type MOSFETs can form a parallel array, and are arranged in a ring or matrix type. The press mounting structure is simple and compact in structure, the through-flow capacity and the heat dissipation capacity are enhanced, and the application range is widened.

Description

Press-fitting structure applied to crimping type MOSFET
Technical Field
The invention relates to a press-fitting structure of a metal-oxide-semiconductor field effect transistor (MOSFET), in particular to a press-fitting structure applied to a press-fitting type MOSFET or a press-fitting type MOSFET array, and belongs to the technical field of electrical engineering.
Background
A Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) is a widely used Field Effect Transistor, which can be applied to digital signal processing such as microprocessors and microcontrollers, and is also implemented by a MOSFET for integrated circuits with more and more analog signal processing.
The traditional MOSFET is of a transverse through-current structure, a grid electrode, a drain electrode and a source electrode of the MOSFET are usually welded on a circuit board, heat generated by the device during working is mainly dissipated through the circuit board and is influenced by the packaging type, the heat dissipation capacity is poor, and the through-current capacity of the MOSFET is limited. The crimping type MOSFET, as shown in fig. 1, is a longitudinal through-flow structure, the drain is a top metal casing, during use, the bottom source and the gate can be respectively welded with the circuit board, the drains on the left and right sides are welded with the circuit board, and the top drain is crimped with the metal connection structure to increase the heat dissipation capability.
In high power applications, a large number of MOSFETs are usually used to connect in parallel to form an array, so as to implement the function of turning on and off a large current. For example, the turn-off module of a gate drive circuit integrated with gate commutated thyristors (IGCTs), as shown in FIG. 2(a), uses a large number of parallel MOSFET arrays QGAnd a pre-charged parallel capacitor bank CoffIn series, by triggering the MOSFET array Q during IGCT offGAnd the IGCT is switched on, so that the cathode current of the IGCT is converted to the gate electrode, and the IGCT is switched off. For another example, in a drive circuit using an emitter turn-off thyristor (ETO) of a GCT or GTO element, as shown in fig. 2(b), two sets of MOSFET arrays Q connected in parallel are usedGAnd QE. ETO on period QGOff, QEConducting; q at ETO OFFEOff, QGOn and current commutates from the cathode to the gate of the GCT or GTO element, turning it off.
The traditional MOSFET array is mostly welded on a circuit board by adopting the traditional MOSFET, and the single MOSFET has limited current capacity, so that the MOSFET array is connected in parallel in a large quantity in high-power application. If the press-connection type MOSFET is adopted, the parallel connection quantity can be greatly reduced, but the heat dissipation mode is special, and no heat dissipation structure aiming at the press-connection type MOSFET array exists at present. In addition, in some applications, with IGCT and ETO driving circuits, to increase the commutation speed of the turn-off device current from cathode to gate, the stray inductance of the loop should be minimized, and for this reason, the MOSFET should be integrated into the device package. Since it is necessary to crimp molybdenum sheets on both sides and apply a pressure of several tens kN or more when using GCT or GTO, and a single crimp type MOSFET can only withstand a pressure of 50-100N, there are problems of pressure difference and fitting of different components if the MOSFET is integrated in a package.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a press-fitting structure applied to a press-fitting type MOSFET array.
The technical scheme is as follows:
the utility model provides a pressure equipment structure, is applied to crimping type MOSFET which characterized in that: the circuit board comprises a first copper block, an elastic structure, a crimping type MOSFET, a circuit board and a second copper block;
the bottom of the first copper block is provided with a groove, and the elastic structure and the crimping type MOSFET are arranged in the groove;
the top of the elastic structure is electrically connected with the first copper block; the bottom of the elastic structure is coupled with the top of the drain electrode of the crimping type MOSFET;
under the condition of no external pressure, the first copper block is not in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimp type MOSFET only through the elastic structure;
the crimping type MOSFET is arranged on the circuit board, and the bottom source electrode and the grid electrode of the crimping type MOSFET are electrically connected with the circuit board;
and a second copper block is rigidly connected to the lower surface of the circuit board.
Furthermore, the elastic structure comprises a main spring, two auxiliary elastic sheets and a metal base; the metal base is provided with a groove structure, one end of the main spring is coupled with the groove of the metal base, and one end of the auxiliary elastic sheet is coupled with the metal base; the other end of the main spring is coupled with a groove at the bottom of the first copper block, and the other end of the auxiliary elastic sheet is slightly contacted with or not contacted with the groove at the bottom of the first copper block when no external pressure exists.
Further, the bottom of the metal pedestal of the spring structure is electrically coupled to the top of the drain of the crimp-type MOSFET.
Further, the circuit board adopts an FR4 substrate, an aluminum substrate or a copper substrate.
Further, the circuit board comprises a top circuit layer, a first insulating heat conduction layer, a middle circuit layer, a second insulating heat conduction layer and a substrate.
Further, when the pressure applied between the first copper block and the second copper block is small, the elastic structure is small, the first copper block is not in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimp type MOSFET only through the elastic structure.
Further, when a large pressure is applied between the first copper block and the second copper block, the elastic structure is deformed and increased, the first copper block is in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimping type MOSFET through the elastic structure and is also electrically connected with the drain electrode of the crimping type MOSFET3 through the copper-coated area of the top layer circuit layer of the circuit board through the contact surface of the first copper block and the circuit board.
Further, the edge of the drain metal shell of the crimping type MOSFET is coupled with the top circuit layer of the circuit board, the grid of the crimping type MOSFET is coupled with the middle circuit layer of the circuit board through a via hole, and the source of the crimping type MOSFET is coupled with the substrate of the circuit board through an electric and heat conducting medium.
Further, a plurality of crimping type MOSFETs are included, forming a crimping type MOSFET array arranged in a ring shape or a matrix shape.
Further, the first copper block, the second copper block and the elastic structure are correspondingly arranged according to the arrangement mode of the crimping type MOSFET array.
Further, when the drain electrodes of the plurality of crimping type MOSFETs are at different electric potentials, a plurality of first copper blocks are arranged, and insulating ring isolation layers are added among the different first copper blocks;
when the source electrodes of the plurality of crimping type MOSFETs are at different electric potentials, a plurality of second copper blocks are arranged, and insulating ring interlayers are added between the different second copper blocks.
Compared with the prior art, the press-fitting structure applied to the press-fitting type MOSFET array has the following beneficial effects:
(1) the device is suitable for the crimping type MOSFET parallel array, and has simple and compact structure.
(2) The elastic structure provides pressure for the contact surface, reduces contact resistance, and utilizes the auxiliary elastic sheet to increase the flow area, thereby increasing the flow capacity of the whole structure.
(3) The elastic structure provides pressure for the contact surface, reduces the thermal resistance of the contact surface, and simultaneously uses the copper-based circuit board and the auxiliary elastic sheet to enhance the heat dissipation capability of the whole structure.
(4) The elastic structure can limit the upper limit value of the pressure applied to the surface of the MOSFET, so that the pressure applied between the first copper block and the second copper block is wider in range, and the application range is wider.
Drawings
FIG. 1: prior art crimp-type MOSFET structures;
FIG. 2 a: a turn-off module of a gate drive circuit of an Integrated Gate Commutated Thyristor (IGCT) in the prior art;
FIG. 2 b: a prior art drive circuit based on an emitter turn-off thyristor (ETO) of a GCT or GTO element;
FIG. 3: an embodiment structure of the press-fitting structure applied to the crimping type MOSFET array of the present invention;
FIG. 4: an embodiment structure of a spring structure of the press-fitting structure applied to a press-fitting type MOSFET array of the present invention;
FIG. 5: the structure of one embodiment of the circuit board applied to the press-fitting structure of the crimping type MOSFET array;
FIG. 6: the invention relates to a crimping type MOSFET array annular arrangement structure chart;
FIG. 7: the invention relates to a structure diagram of a crimping type MOSFET array with a plurality of annular arrangements;
FIG. 8: the crimp type MOSFET array of the present invention is structured in another multiple ring arrangement (top view and side view).
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments, but not as a limitation of the invention.
In one embodiment, a press-fitting structure for a crimp MOSFET array is structurally illustrated in fig. 3, and comprises, from top to bottom: the structure comprises a first copper block 1, an elastic structure 2, a pressure welding type MOSFET3, a circuit board 4 and a second copper block 5. Wherein, the bottom of the first copper block 1 is provided with a groove, and the elastic structure 2 and the crimping type MOSFET3 are arranged in the groove. The press-fitting structure comprises one or more elastic structures 2 and press-fitting type MOSFETs 3, the elastic structures 2 correspond to the press-fitting type MOSFETs 3 one by one, one or more grooves are formed in the bottom of the first copper block 1, each group of elastic structures 2 and the press-fitting type MOSFETs 3 are arranged in the corresponding grooves, and an array is formed in the press-fitting structure.
The spring structure 2, as shown in fig. 4, includes a main spring 6, two auxiliary resilient pieces 7, and a metal base 8. The metal base 8 has a groove structure, and one end of the main spring 6 is coupled with the groove of the metal base 8. One end of the auxiliary elastic sheet 7 is coupled with the metal base 8; the other end of the main spring 6 is coupled with the groove at the bottom of the first copper block 1, and the other ends of the two auxiliary elastic sheets 7 are slightly contacted or not contacted with the groove at the bottom of the first copper block 1 when no external pressure exists.
The circuit board 4 may be a conventional FR4 base circuit board, or an aluminum substrate or a copper substrate. In one embodiment, as shown in fig. 5, the circuit board 4 includes a top circuit layer, a first insulating and heat conducting layer, an intermediate circuit layer, a second insulating and heat conducting layer and a copper substrate.
As shown in fig. 3, the elastic structure 2 and the crimp MOSFET3 are disposed in the groove at the bottom of the first copper block 1, the top of the elastic structure 2 is electrically connected to the inner surface of the groove, the first copper block 1 is not in contact with the circuit board 4 under the condition of no pressure, and the first copper block 1 is electrically connected to the drain of the crimp MOSFET3 only through the elastic structure 2. The metal pedestal 8 at the bottom of the elastic structure 2 is coupled with the top of the drain of the crimp type MOSFET3, and the bottom source and the gate of the crimp type MOSFET3 are electrically connected with the circuit board 4; the crimp-type MOSFET3 is disposed on the circuit board 4; a second copper block 5 is rigidly connected to the underside of the circuit board 4.
In one embodiment, the press-fitting structure applied to the crimping type MOSFET array has the following properties in electrical characteristics: when pressure is applied between the first copper block 1 and the second copper block 5, deformation of the elastic structure 2 is small, the first copper block 1 is not in contact with the circuit board 4, the first copper block 1 is only electrically connected with the drain electrode of the crimping type MOSFET3 through the elastic structure 2, and the auxiliary elastic sheet 7 in the elastic structure 2 is used for increasing the flow area and the contact area and reducing flow resistance and thermal resistance.
When pressure is applied between the first copper block 1 and the second copper block 5, the elastic structure 2 deforms greatly, the first copper block 1 is in contact with the circuit board 4, the first copper block 1 can be electrically connected with the drain electrode of the crimping type MOSFET3 through the elastic structure 2, and can also be electrically connected with the drain electrode of the crimping type MOSFET3 through the copper-coated area of the top layer circuit layer of the circuit board 4 through the contact surface of the first copper block 1 and the circuit board 4, so that the through-flow area of the drain electrode of the first copper block 1 and the crimping type MOSFET3 is increased, and the through-flow resistance is reduced. Also, the auxiliary spring 7 in the elastic structure 2 is used for increasing the flow area and the contact area, and reducing the flow resistance and the thermal resistance.
The bottom of the metal pedestal 8 of the spring structure 2 is coupled to the top of the drain of the crimp-type MOSFET3, and the main spring 6 is used to provide contact surface pressure and reduce contact resistance and thermal resistance.
As shown in fig. 5, the edge of the metal can of the drain D of the crimp MOSFET3 is coupled to the top circuit layer of the circuit board 4, the gate G of the crimp MOSFET3 is coupled to the middle circuit layer of the circuit board 4 by a via and is connected to the gate trigger signal receiving terminal of the circuit board, and the source S of the crimp MOSFET3 is coupled to the copper substrate of the circuit board 4 by an electrically and thermally conductive medium (e.g., solder paste).
The second copper block 5 is electrically connected to the source of the crimp-type MOSFET3 through the circuit board 4.
In one embodiment, the press-fitting structure applied to the crimping type MOSFET array has the following properties in mechanical characteristics: according to the press-fitting structure, pressure required by different applications can be applied between the top end of the first copper block 1 and the bottom end of the second copper block 5, and the pressure can be as high as dozens of kN.
When pressure is applied between the first copper block 1 and the second copper block 5, the deformation of the elastic structure 2 is small, the first copper block 1 is not in contact with the circuit board 4, the second copper block 5 is in rigid contact with the circuit board, and the pressure applied between the first copper block 1 and the second copper block 5 is the pressure sum of the crimping type MOSFET3 array and the metal base 8.
When the pressure applied between the first copper block 1 and the second copper block 5 is increased, the first copper block 1 is in rigid contact with the circuit board 4, the second copper block 5 is in rigid contact with the circuit board 4, and the spring deformation is not increased any more at the moment, so that the parameters of the main spring 6 can be designed according to the pressure requirements (50-100N) of the metal base 8 of the elastic structure 2 and the crimping type MOSFET3, and the main spring 6 can provide the required pressure value when being deformed maximally. And the pressure is increased continuously, and redundant pressure is applied to the contact surface of the first copper block 1 and the circuit board 4, so that the compression type MOSFET3 is prevented from being damaged by mechanical stress due to excessive pressure.
In one embodiment, the press-fit structure applied to the crimping type MOSFET array has the following properties in terms of thermal characteristics: the heat generated by the crimp MOSFET3 during through-flow can be dissipated through the upper and lower surfaces. The upper surface, dispel the heat through the radiator that metal base 8, supplementary shell fragment 7, first copper billet 1 are connected, also can dispel the heat through the radiator that drain electrode D metal casing both ends, circuit board 4 top layer circuit layer, first copper billet 1 are connected. And the lower surface is used for heat dissipation through a radiator connected with the solder paste, the copper substrate, the second copper block 5 and the second copper block 5. Thereby realizing the effect of double-sided heat dissipation.
The pressure applied between the first copper block 1 and the second copper block 5 is beneficial to reducing the thermal resistance of each contact surface, thereby enhancing the heat conduction capability.
In one embodiment, the array of crimp-type MOSFETs may be arranged in a ring, forming a ring, as shown in fig. 6; or a plurality of rings, such as three rings shown in fig. 7, may be formed, or arranged in a matrix. The first copper block, the second copper block and the elastic structure are designed correspondingly according to the arrangement mode of the crimping type MOSFET array. For the distribution shown in fig. 7, if the drains of the crimp-type MOSFETs of different rings are at different potentials, a plurality of first copper blocks should be designed, and insulating ring spacers should be added between the different first copper blocks, as shown in fig. 8. If the sources of the crimp-type MOSFETs of different rings are at different potentials, a plurality of second copper blocks should be designed, similarly.
The press-fitting structure applied to the crimping type MOSFET array has the following beneficial effects:
(1) the device is suitable for the crimping type MOSFET parallel array, and has simple and compact structure.
(2) The elastic structure provides pressure for the contact surface, reduces contact resistance, and utilizes the auxiliary elastic sheet to increase the flow area, thereby increasing the flow capacity of the whole structure.
(3) The elastic structure provides pressure for the contact surface, reduces the thermal resistance of the contact surface, and simultaneously uses the copper-based circuit board and the auxiliary elastic sheet to enhance the heat dissipation capability of the whole structure.
(4) The elastic structure can limit the upper limit value of the pressure applied to the surface of the MOSFET, so that the pressure applied between the first copper block and the second copper block is wider in range, and the application range is wider.
The above description is only a preferred embodiment of the present invention and should not be interpreted as limiting the scope of the present invention, it should be noted that those skilled in the art can make various changes and modifications without departing from the spirit of the present invention, and these changes and modifications should fall within the protection scope of the present invention.

Claims (11)

1. The utility model provides a pressure equipment structure, is applied to crimping type MOSFET which characterized in that: the circuit board comprises a first copper block, an elastic structure, a crimping type MOSFET, a circuit board and a second copper block;
the bottom of the first copper block is provided with a groove, and the elastic structure and the crimping type MOSFET are arranged in the groove;
the top of the elastic structure is electrically connected with the first copper block; the bottom of the elastic structure is coupled with the top of the drain electrode of the crimping type MOSFET;
under the condition of no external pressure, the first copper block is not in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimp type MOSFET only through the elastic structure;
the crimping type MOSFET is arranged on the circuit board, and the bottom source electrode and the grid electrode of the crimping type MOSFET are electrically connected with the circuit board;
and a second copper block is rigidly connected to the lower surface of the circuit board.
2. A press-fitting construction according to claim 1, wherein: the elastic structure comprises a main spring, two auxiliary elastic sheets and a metal base; the metal base is provided with a groove structure, one end of the main spring is coupled with the groove of the metal base, and one end of the auxiliary elastic sheet is coupled with the metal base; the other end of the main spring is coupled with a groove at the bottom of the first copper block, and the other end of the auxiliary elastic sheet is slightly contacted with or not contacted with the groove at the bottom of the first copper block when no external pressure exists.
3. A press-fitting construction according to claim 2, wherein: the bottom of the metal base of the elastic structure is electrically coupled with the top of the drain of the crimp-type MOSFET.
4. A press-fitting construction according to claim 1, wherein: the circuit board adopts an FR4 substrate, an aluminum substrate or a copper substrate.
5. A press-fitting construction according to claim 1, wherein: the circuit board comprises a top circuit layer, a first insulating heat-conducting layer, an intermediate circuit layer, a second insulating heat-conducting layer and a substrate.
6. A press-fitting construction according to claim 1, wherein: when the pressure applied between the first copper block and the second copper block is small, the elastic structure is small, the first copper block is not in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimping type MOSFET only through the elastic structure.
7. A press-fitting construction according to claim 1, wherein: when pressure is applied between the first copper block and the second copper block to be larger, deformation of the elastic structure is increased, the first copper block is in contact with the circuit board, and the first copper block is electrically connected with the drain electrode of the crimping type MOSFET through the elastic structure, and is also electrically connected with the drain electrode of the crimping type MOSFET through the contact surface of the first copper block and the circuit board and the copper-coated area of the top layer circuit layer of the circuit board.
8. A press-fitting construction according to claim 1, wherein: the edge of the drain metal shell of the crimping type MOSFET is coupled with the top circuit layer of the circuit board, the grid of the crimping type MOSFET is coupled with the middle circuit layer of the circuit board through a through hole, and the source of the crimping type MOSFET is coupled with the substrate of the circuit board through an electric and heat conducting medium.
9. A press-fitting construction according to claim 1, wherein: the crimping type MOSFET array comprises a plurality of crimping type MOSFETs, and the crimping type MOSFET array is formed and arranged in a ring shape or a matrix shape.
10. A press-fitting construction according to claim 9, wherein: and the first copper block, the second copper block and the elastic structure are correspondingly arranged according to the arrangement mode of the crimping type MOSFET array.
11. A press-fitting construction according to claim 10, wherein: when the drain electrodes of the crimping type MOSFETs are at different electric potentials, arranging a plurality of first copper blocks, and adding insulating ring interlayers among the different first copper blocks;
when the source electrodes of the plurality of crimping type MOSFETs are at different electric potentials, a plurality of second copper blocks are arranged, and insulating ring interlayers are added between the different second copper blocks.
CN201810829497.6A 2017-09-01 2018-07-25 Press-fitting structure applied to crimping type MOSFET Pending CN110767637A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201810829497.6A CN110767637A (en) 2018-07-25 2018-07-25 Press-fitting structure applied to crimping type MOSFET
EP18850023.5A EP3678173A4 (en) 2017-09-01 2018-09-03 Electrical device and electrical apparatus
PCT/CN2018/103750 WO2019042446A1 (en) 2017-09-01 2018-09-03 Electrical device and electrical apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810829497.6A CN110767637A (en) 2018-07-25 2018-07-25 Press-fitting structure applied to crimping type MOSFET

Publications (1)

Publication Number Publication Date
CN110767637A true CN110767637A (en) 2020-02-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810829497.6A Pending CN110767637A (en) 2017-09-01 2018-07-25 Press-fitting structure applied to crimping type MOSFET

Country Status (1)

Country Link
CN (1) CN110767637A (en)

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