CN110767534A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
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- CN110767534A CN110767534A CN201911028436.0A CN201911028436A CN110767534A CN 110767534 A CN110767534 A CN 110767534A CN 201911028436 A CN201911028436 A CN 201911028436A CN 110767534 A CN110767534 A CN 110767534A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides a method for cleaning a wafer, and relates to the technical field of semiconductor cleaning. The wafer cleaning method comprises the following steps: s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, and taking out after continuously irradiating for 5-10 min; s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, firstly soaking the wafer in the cleaning solution for 15-30min, and then scraping and brushing the surface of the wafer by using a brush; and S3, conveying the wafer into a vacuum box body, introducing water vapor into the vacuum box body, and closing all the equipment after 5-10 min. Through processes such as strong light irradiation, cleaning solution soaking, steam treatment and cleaning solution spraying, the surface of the wafer is cleaned completely, the cleaning mode of the whole wafer is reasonable, the cleaning effect on the surface of the wafer is ideal, and meanwhile, the cleaning efficiency of the wafer is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor cleaning, in particular to a wafer cleaning method.
Background
The raw material of the wafer is silicon, the crust surface has inexhaustible silicon dioxide, the silicon dioxide ore is refined by an electric arc furnace, chloridized by hydrochloric acid, and distilled to prepare high-purity polysilicon with the purity of 99.9 percent, the wafer manufacturer melts the polysilicon, seeds are planted in the melting liquid, and then the polysilicon is slowly pulled out to form a cylindrical monocrystalline silicon crystal rod, the process is called 'crystal growth', the silicon crystal rod is cut, rolled, sliced, chamfered, polished, laser-etched and packaged, and the final wafer can be obtained.
In the manufacturing process of the wafer, a certain polymer needs to be formed in an etching process to protect the side wall in order to form a good etching appearance, and after etching is completed, the surface of the wafer needs to be cleaned.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a method for cleaning a wafer, which solves the problems that the cleaning effect of the surface of the wafer is not ideal and the cleaning efficiency of the wafer needs to be further improved.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a method for cleaning a wafer comprises the following steps:
s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, and taking out after continuously irradiating for 5-10 min;
s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, firstly soaking the wafer in the cleaning solution for 15-30min, then scraping and brushing the surface of the wafer by using a brush, taking out the wafer after repeatedly scraping and brushing for 3-5 times, and then washing the surface of the wafer clean by using distilled water;
s3, conveying the wafer into a vacuum box body, arranging rotary equipment in the vacuum box body, placing the wafer into the rotary equipment for rotation, firstly introducing a proper amount of nitrogen into the vacuum box body, introducing water vapor into the vacuum box body after the nitrogen in the vacuum box body reaches a preset value, closing all the equipment after 5-10min, and taking out the wafer in the box body when the temperature in the vacuum box body is reduced to be below 40 ℃;
and S4, sending the wafer into a vacuum environment again, extracting the cleaning liquid by using a high-pressure water pump and an atomizing nozzle, atomizing the cleaning liquid, spraying the wafer by using the atomized cleaning liquid, taking out the wafer after 3-5min, washing the surface of the wafer by using distilled water, and finally drying the wafer.
Preferably, the cleaning solution consists of the following components in parts by weight: 10-12 parts of deionized water, 3-4 parts of sodium sulfonate, 2-3 parts of citric acid and 1-2 parts of ammonium fluoride.
Preferably, the cleaning solution consists of the following components in parts by weight: 12 parts of deionized water, 4 parts of sodium sulfonate, 3 parts of citric acid and 2 parts of ammonium fluoride.
Preferably, the cleaning solution consists of the following components in parts by weight: 11 parts of deionized water, 3.5 parts of sodium sulfonate, 2.5 parts of citric acid and 1.5 parts of ammonium fluoride.
Preferably, the cleaning solution consists of the following components in parts by weight: 10 parts of deionized water, 3 parts of sodium sulfonate, 2 parts of citric acid and 1 part of ammonium fluoride.
(III) advantageous effects
The invention provides a method for cleaning a wafer. The method has the following beneficial effects:
1. according to the method for cleaning the wafer, the surface of the wafer is cleaned completely by utilizing the processes of strong light irradiation, cleaning solution soaking, steam treatment, cleaning solution spraying and the like, the cleaning mode of the whole wafer is reasonable, the cleaning effect on the surface of the wafer is ideal, and meanwhile, the cleaning efficiency of the wafer is further improved.
2. According to the cleaning method of the wafer, the cleaning liquid is reasonably prepared, so that the cleaning liquid is matched with the cleaning process, and the cleaning effect of the wafer is greatly improved.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to a plurality of embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the embodiment of the invention provides a method for cleaning a wafer, which comprises the following steps:
s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, continuously irradiating for 5-10min, then taking out, and irradiating the surface of the wafer by using the strong light, so that the temperature of the surface of the wafer can be raised, and the activity of the surface of the wafer can be changed;
s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, soaking the wafer in the cleaning solution for 15-30min, scraping and brushing the surface of the wafer by using a brush, repeatedly scraping and brushing for 3-5 times, then taking out, washing the surface of the wafer clean by using distilled water, and scraping and brushing the surface of the wafer to be automatic cleaning equipment without manually cleaning the surface of the wafer;
s3, sending the wafer into a vacuum box body, arranging a rotating device in the vacuum box body, placing the wafer in the rotating device to rotate, wherein the rotating speed of the rotating device is 100 plus 200r/min, firstly introducing a proper amount of nitrogen into the vacuum box body, introducing water vapor into the vacuum box body after the nitrogen in the vacuum box body reaches a preset value, closing all devices after 5-10min, and taking out the wafer in the box body when the temperature in the vacuum box body is reduced to be below 40 ℃;
and S4, sending the wafer into a vacuum environment again, extracting the cleaning liquid by using a high-pressure water pump and an atomizing nozzle, atomizing the cleaning liquid, spraying the wafer by using the atomized cleaning liquid, taking out the wafer after 3-5min, washing the surface of the wafer by using distilled water, and finally drying the wafer.
The cleaning solution comprises the following components in parts by weight: 12 parts of deionized water, 4 parts of sodium sulfonate, 3 parts of citric acid and 2 parts of ammonium fluoride.
Example two:
the embodiment of the invention provides a method for cleaning a wafer, which comprises the following steps:
s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, and taking out after continuously irradiating for 5-10 min;
s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, firstly soaking the wafer in the cleaning solution for 15-30min, then scraping and brushing the surface of the wafer by using a brush, taking out the wafer after repeatedly scraping and brushing for 3-5 times, and then washing the surface of the wafer clean by using distilled water;
s3, conveying the wafer into a vacuum box body, arranging rotary equipment in the vacuum box body, placing the wafer into the rotary equipment for rotation, firstly introducing a proper amount of nitrogen into the vacuum box body, introducing water vapor into the vacuum box body after the nitrogen in the vacuum box body reaches a preset value, closing all the equipment after 5-10min, and taking out the wafer in the box body when the temperature in the vacuum box body is reduced to be below 40 ℃;
and S4, sending the wafer into a vacuum environment again, extracting the cleaning liquid by using a high-pressure water pump and an atomizing nozzle, atomizing the cleaning liquid, spraying the wafer by using the atomized cleaning liquid, taking out the wafer after 3-5min, washing the surface of the wafer by using distilled water, and finally drying the wafer.
The cleaning solution comprises the following components in parts by weight: 11 parts of deionized water, 3.5 parts of sodium sulfonate, 2.5 parts of citric acid and 1.5 parts of ammonium fluoride.
Example three:
the embodiment of the invention provides a method for cleaning a wafer, which comprises the following steps:
s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, and taking out after continuously irradiating for 5-10 min;
s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, firstly soaking the wafer in the cleaning solution for 15-30min, then scraping and brushing the surface of the wafer by using a brush, taking out the wafer after repeatedly scraping and brushing for 3-5 times, and then washing the surface of the wafer clean by using distilled water;
s3, conveying the wafer into a vacuum box body, arranging rotary equipment in the vacuum box body, placing the wafer into the rotary equipment for rotation, firstly introducing a proper amount of nitrogen into the vacuum box body, introducing water vapor into the vacuum box body after the nitrogen in the vacuum box body reaches a preset value, closing all the equipment after 5-10min, and taking out the wafer in the box body when the temperature in the vacuum box body is reduced to be below 40 ℃;
and S4, sending the wafer into a vacuum environment again, extracting the cleaning liquid by using a high-pressure water pump and an atomizing nozzle, atomizing the cleaning liquid, spraying the wafer by using the atomized cleaning liquid, taking out the wafer after 3-5min, washing the surface of the wafer by using distilled water, and finally drying the wafer.
The cleaning solution comprises the following components in parts by weight: 10 parts of deionized water, 3 parts of sodium sulfonate, 2 parts of citric acid and 1 part of ammonium fluoride.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A method for cleaning a wafer is characterized in that: the method comprises the following steps:
s1, firstly, placing a wafer in a vacuum environment, then irradiating the surface of the wafer by using strong light, turning off a light source after irradiating for 5-10min, turning the wafer to the other side, and taking out after continuously irradiating for 5-10 min;
s2, preparing a wafer cleaning solution, placing the wafer in the cleaning solution, firstly soaking the wafer in the cleaning solution for 15-30min, then scraping and brushing the surface of the wafer by using a brush, taking out the wafer after repeatedly scraping and brushing for 3-5 times, and then washing the surface of the wafer clean by using distilled water;
s3, conveying the wafer into a vacuum box body, arranging rotary equipment in the vacuum box body, placing the wafer into the rotary equipment for rotation, firstly introducing a proper amount of nitrogen into the vacuum box body, introducing water vapor into the vacuum box body after the nitrogen in the vacuum box body reaches a preset value, closing all the equipment after 5-10min, and taking out the wafer in the box body when the temperature in the vacuum box body is reduced to be below 40 ℃;
and S4, sending the wafer into a vacuum environment again, extracting the cleaning liquid by using a high-pressure water pump and an atomizing nozzle, atomizing the cleaning liquid, spraying the wafer by using the atomized cleaning liquid, taking out the wafer after 3-5min, washing the surface of the wafer by using distilled water, and finally drying the wafer.
2. A method for cleaning a wafer according to claim 1, wherein: the cleaning solution comprises the following components in parts by weight: 10-12 parts of deionized water, 3-4 parts of sodium sulfonate, 2-3 parts of citric acid and 1-2 parts of ammonium fluoride.
3. A method for cleaning a wafer according to claim 2, wherein: the cleaning solution comprises the following components in parts by weight: 12 parts of deionized water, 4 parts of sodium sulfonate, 3 parts of citric acid and 2 parts of ammonium fluoride.
4. A method for cleaning a wafer according to claim 2, wherein: the cleaning solution comprises the following components in parts by weight: 11 parts of deionized water, 3.5 parts of sodium sulfonate, 2.5 parts of citric acid and 1.5 parts of ammonium fluoride.
5. A method for cleaning a wafer according to claim 2, wherein: the cleaning solution comprises the following components in parts by weight: 10 parts of deionized water, 3 parts of sodium sulfonate, 2 parts of citric acid and 1 part of ammonium fluoride.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911028436.0A CN110767534B (en) | 2019-10-28 | 2019-10-28 | Wafer cleaning method |
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| CN201911028436.0A CN110767534B (en) | 2019-10-28 | 2019-10-28 | Wafer cleaning method |
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| CN110767534A true CN110767534A (en) | 2020-02-07 |
| CN110767534B CN110767534B (en) | 2021-12-28 |
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| CN104781204A (en) * | 2012-11-22 | 2015-07-15 | 旭硝子株式会社 | Glass substrate cleaning method |
| US20180272386A1 (en) * | 2017-03-24 | 2018-09-27 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions for removing residues on semiconductor substrates |
| CN109248878A (en) * | 2018-08-31 | 2019-01-22 | 深圳市华星光电技术有限公司 | A kind of cleaning platform and cleaning method |
| JP2019125810A (en) * | 2014-02-06 | 2019-07-25 | 三菱ケミカル株式会社 | Substrate cleaning liquid for semiconductor device and method for cleaning substrate for semiconductor device |
| WO2019192866A1 (en) * | 2018-04-04 | 2019-10-10 | Basf Se | IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN |
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2019
- 2019-10-28 CN CN201911028436.0A patent/CN110767534B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201046544Y (en) * | 2007-04-03 | 2008-04-16 | 中芯国际集成电路制造(上海)有限公司 | Rinsing apparatus for chemical machinery polisher |
| CN104781204A (en) * | 2012-11-22 | 2015-07-15 | 旭硝子株式会社 | Glass substrate cleaning method |
| JP2019125810A (en) * | 2014-02-06 | 2019-07-25 | 三菱ケミカル株式会社 | Substrate cleaning liquid for semiconductor device and method for cleaning substrate for semiconductor device |
| US20180272386A1 (en) * | 2017-03-24 | 2018-09-27 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning compositions for removing residues on semiconductor substrates |
| WO2019192866A1 (en) * | 2018-04-04 | 2019-10-10 | Basf Se | IMIDAZOLIDINETHIONE-CONTAINING COMPOSITIONS FOR POST-ASH RESIDUE REMOVAL AND/OR FOR OXIDATIVE ETCHING OF A LAYER OR MASK COMPRISING TiN |
| CN109248878A (en) * | 2018-08-31 | 2019-01-22 | 深圳市华星光电技术有限公司 | A kind of cleaning platform and cleaning method |
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| 蒋金金等: "硅表面化学镀镍研究 ", 《电镀与精饰》 * |
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Effective date of registration: 20211215 Address after: 221300 plant No.16, phase III, amorphous Industrial Park, north side of Huancheng North Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Jingjie Photoelectric Technology Co.,Ltd. Address before: No.88 Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant before: SU Normal University Semiconductor Materials and Equipment Research Institute (Pizhou) Co.,Ltd. |
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