CN110760932B - 一种利用铟磷混合物制备磷化铟晶体的方法 - Google Patents
一种利用铟磷混合物制备磷化铟晶体的方法 Download PDFInfo
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- CN110760932B CN110760932B CN201911155615.0A CN201911155615A CN110760932B CN 110760932 B CN110760932 B CN 110760932B CN 201911155615 A CN201911155615 A CN 201911155615A CN 110760932 B CN110760932 B CN 110760932B
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- indium
- phosphorus
- indium phosphide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201911155615.0A CN110760932B (zh) | 2019-11-22 | 2019-11-22 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
PCT/CN2020/114333 WO2021098348A1 (zh) | 2019-11-22 | 2020-09-10 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
US17/415,952 US11781240B2 (en) | 2019-11-22 | 2020-09-10 | Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixture |
Applications Claiming Priority (1)
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CN201911155615.0A CN110760932B (zh) | 2019-11-22 | 2019-11-22 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
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CN110760932A CN110760932A (zh) | 2020-02-07 |
CN110760932B true CN110760932B (zh) | 2021-02-23 |
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US (1) | US11781240B2 (zh) |
CN (1) | CN110760932B (zh) |
WO (1) | WO2021098348A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110760932B (zh) * | 2019-11-22 | 2021-02-23 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
CN111424310B (zh) * | 2020-06-02 | 2022-02-15 | 中国电子科技集团公司第十三研究所 | 一种液态磷注入法合成磷化铟的方法 |
CN112680790A (zh) * | 2020-12-07 | 2021-04-20 | 宁波建锡新材料有限公司 | 一种磷化铟半导体材料的合成方法 |
CN115142121B (zh) * | 2021-03-31 | 2023-06-20 | 晶科能源股份有限公司 | 提高复投单晶硅成晶率的方法及单晶硅制备装置 |
WO2022252545A1 (zh) * | 2021-06-03 | 2022-12-08 | 中国电子科技集团公司第十三研究所 | 一种半绝缘磷化铟的制备装置及方法 |
CN113308740B (zh) * | 2021-06-03 | 2022-06-24 | 中国电子科技集团公司第十三研究所 | 一种半绝缘磷化铟的制备方法 |
CN115198369B (zh) * | 2022-07-15 | 2024-06-11 | 中国电子科技集团公司第十三研究所 | 一种磷化铟合成与vgf晶体制备的装置及方法 |
Family Cites Families (18)
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DE2133875A1 (de) * | 1971-07-07 | 1973-01-18 | Siemens Ag | Verfahren zum ziehen von einkristallen, insbesondere fuer keimkristalle |
JPS60118696A (ja) * | 1983-11-26 | 1985-06-26 | Showa Denko Kk | リン化インジウム単結晶の育成方法 |
JPS61222911A (ja) * | 1985-03-28 | 1986-10-03 | Toshiba Corp | 燐化化合物の合成方法 |
JPS62246899A (ja) * | 1986-04-17 | 1987-10-28 | Nec Corp | 化合物半導体結晶成長方法 |
US5252175A (en) * | 1990-06-29 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
EP0476389A3 (en) * | 1990-08-30 | 1993-06-09 | The Furukawa Electric Co., Ltd. | Method of growing single crystal of compound semiconductors |
US5431125A (en) * | 1991-06-14 | 1995-07-11 | The United States Of America As Represented By The Secretary Of The Air Force | Twin-free crystal growth of III-V semiconductor material |
DE19747996C1 (de) * | 1997-10-17 | 1999-03-04 | Armin Dadgar | Verfahren zur epitaktischen Herstellung von semiisolierenden III-V Verbindungshalbleitern |
JP2005298254A (ja) * | 2004-04-09 | 2005-10-27 | Hitachi Cable Ltd | 化合物半導体単結晶成長用容器及びそれを用いた化合物半導体単結晶の製造方法 |
EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
US20130310968A1 (en) * | 2010-12-21 | 2013-11-21 | Roelof Johannes Baptist Gottenbos | Paint chip dispenser |
CN102628180A (zh) * | 2012-04-23 | 2012-08-08 | 南京金美镓业有限公司 | 一种高纯度磷化铟多晶棒的制备方法 |
CN102965734A (zh) * | 2012-12-04 | 2013-03-13 | 中国电子科技集团公司第十三研究所 | 磷化铟多晶材料的快速合成方法及其多管石英磷泡 |
CN106206841B (zh) * | 2016-07-21 | 2018-04-13 | 江西德义半导体科技有限公司 | 砷化镓衬底材料制备方法 |
CN109402722B (zh) * | 2018-12-14 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | 一种反式注入合成连续vgf晶体生长装置及方法 |
CN211112317U (zh) * | 2019-11-22 | 2020-07-28 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的*** |
CN110760932B (zh) * | 2019-11-22 | 2021-02-23 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
CN110760931B (zh) * | 2019-11-22 | 2024-03-19 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的*** |
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2019
- 2019-11-22 CN CN201911155615.0A patent/CN110760932B/zh active Active
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2020
- 2020-09-10 WO PCT/CN2020/114333 patent/WO2021098348A1/zh active Application Filing
- 2020-09-10 US US17/415,952 patent/US11781240B2/en active Active
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Publication number | Publication date |
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US20220081799A1 (en) | 2022-03-17 |
CN110760932A (zh) | 2020-02-07 |
WO2021098348A1 (zh) | 2021-05-27 |
US11781240B2 (en) | 2023-10-10 |
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Inventor after: Sun Niefeng Inventor after: Ou Xin Inventor after: Song Ruiliang Inventor after: Liu Huisheng Inventor after: Sun Tongnian Inventor after: Bu Aimin Inventor after: Wang Shujie Inventor after: Shi Yanlei Inventor after: Shao Huimin Inventor after: Fu Lijie Inventor after: Li Xiaolan Inventor after: Wang Yang Inventor after: Xu Senfeng Inventor before: Sun Niefeng Inventor before: Sun Tongnian Inventor before: Wang Shujie Inventor before: Shi Yanlei Inventor before: Shao Huimin Inventor before: Fu Lijie Inventor before: Li Xiaolan Inventor before: Wang Yang Inventor before: Xu Senfeng Inventor before: Liu Huisheng |
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