CN110752293A - Bidirectional threshold switch selection device and preparation method thereof - Google Patents
Bidirectional threshold switch selection device and preparation method thereof Download PDFInfo
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- CN110752293A CN110752293A CN201910924689.XA CN201910924689A CN110752293A CN 110752293 A CN110752293 A CN 110752293A CN 201910924689 A CN201910924689 A CN 201910924689A CN 110752293 A CN110752293 A CN 110752293A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
Abstract
The invention provides a bidirectional threshold switch selection device and a preparation method thereof, belonging to the technical field of semiconductor and CMOS hybrid integrated circuits. The invention can optimize the current-voltage characteristic of the selection device by utilizing the thin film superposition effect of the barrier layer thin film and the threshold switch characteristic, so that the device shows the characteristic of symmetrical bidirectional threshold switch selection. The invention realizes the bidirectional threshold switch selection tube device based on the traditional CMOS process so as to reduce or even eliminate the crosstalk problem in the crossbar structure of the resistive random access memory.
Description
Technical Field
The invention belongs to the technical field of semiconductor and CMOS hybrid integrated circuits, and particularly relates to a bidirectional threshold switch selection device and a preparation method thereof.
Background
With the development of integrated circuits, the device size is smaller and smaller, and the integration density is higher and higher. Meanwhile, with the development of the mobile internet, the requirement for the power consumption of the devices of the mobile terminal equipment is higher and higher. For the nonvolatile memory, the size reduction and integration density of a flash memory (flash) that currently occupies a major share of the market are coming to the limit, and the operating voltage is high, which is difficult to meet the development of the future mobile internet.
In the research of numerous emerging flash memory substitutes, a Resistive Random Access Memory (RRAM) becomes a favorable competitor of the next-generation memory due to the advantages of high integration level, low read-write power consumption, high read-write speed and the like. Resistive random access memories generally have two states, a high resistance state ("0" state) and a low resistance state ("1" state). In actual operation, the two states can be switched by applying different external voltage stimuli. Meanwhile, due to the nonvolatile characteristic of the resistive random access memory, the resistance value of the resistive random access memory still cannot be changed after voltage excitation is removed. The resistive random access memory has a very simple structure, is similar to a capacitor structure, and is a metal-resistive layer-metal sandwich structure. The structure is very simple, and the area of the characteristic dimension can be reduced to 4F theoretically2The method is very suitable for the integration of a memory array with a Crossbar structure. In addition, 3D vertical integration of 3DCrossbar or similar traditional flash memories is formed through a multilayer stacked Crossbar structure, and the integration density of the resistive random access memory can be further improved.
However, for a resistance change memory in a memory array, leakage current in the array needs to be considered in design. In a memory array, when one memory device is selected by a word line (word line) and a bit line (bit line), the other half-selected memory devices may provide some leakage current due to the voltage application. In the worst case, when a device in a high resistance state is selected and the surrounding devices are all in a low resistance state, the surrounding high leakage current will cover the low current that would have been from the high resistance state device only, thereby causing a read error. Due to the existence of leakage current, reading errors can occur, power consumption can be increased, and large-scale integration of the resistive random access memory is not facilitated.
In order to solve the problem of leakage current in the resistive random access memory array integration, two solutions are generally available when the resistive random access memory is integrated: namely a 1T1R (One-resistor One-RRAM) structural unit and a 1S1R (One-Selector One-RRAM) structural unit. The common design idea of the two structures is that when one resistive random access memory is selected, the other resistive random access memories are closed, so that the resistance values of the other resistive random access memories are infinite (ideal situation), and the interference is weakened. The 1T1R structure realizes control of each cell by connecting a transistor (transistor) in series to the resistance change memory. This approach can solve the problem of leakage current, but the area of each cell is increased due to the introduction of the transistor, which weakens the integration advantage of the resistive random access memory itself. The application of the traditional diode device or the unidirectional rectifying device to the bipolar resistive random access memory array which is mainstream at present has a challenge. The other structure is a 1S1R structure, wherein a selector serving as a selection device has switching characteristics under different voltage excitation, and is also of a sandwich structure, and the area of the selection device is almost the same as that of the resistive random access memory. Compared with the conventional diode introduced by 1T1R, the 1S1R unit area is smaller, and the integration with higher density is facilitated.
Disclosure of Invention
In view of the above disadvantages, the invention provides a bidirectional threshold switch selection device and a manufacturing method thereof, which are implemented based on a conventional CMOS process, so as to reduce or even eliminate the crosstalk problem in a crossbar structure of a resistive random access memory.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a bidirectional threshold switch selection device comprises a substrate and a bottom electrode-barrier layer film-threshold switch layer film-top electrode structure positioned on the substrate. The bottom electrode-barrier layer-threshold switch layer-top electrode structure is a Metal-Insulator-Metal (Metal-Insulator-Metal) capacitor structure or a Metal-Semiconductor-Metal (Metal-Semiconductor-Metal) capacitor structure. The invention utilizes the barrier layer film as an insulator under low voltage, so that the threshold switch layer film can not be started even under low voltage, and the selection device is in an off state; the barrier layer film can generate the characteristic of larger tunneling current under high voltage, and meanwhile, under larger voltage, the threshold switch film layer can generate phase change to be a conductor due to the metal-insulator transition characteristic, so that the on-state current is further increased, and the device is in an on state.
The substrate adopts silicon;
the bottom electrode and the top electrode are made of metal materials, and the thickness of the bottom electrode and the thickness of the top electrode are 50nm-200 nm;
further, the metal material is Ti, Al, Au, W, Cu, Ta, Pt, Ir or TiN, TaN;
the barrier layer film is made of oxide materials and has the thickness of 1nm-100 nm; or organic material with thickness of 200-500 nm.
Further, the oxide material is TaOx、HfOx、SiOx、Al2O3Or TiO2。
Further, the organic material is parylene;
the threshold switch layer thin film material is VO2、NbO2GeTe, SiTe or ZnTe, the thickness is 1nm-100 nm.
A preparation method of a bottom electrode-barrier layer film-threshold switch layer film-top electrode structure comprises the following steps:
1) defining a bottom electrode pattern, and preparing a bottom electrode on a substrate according to the pattern;
2) depositing a barrier layer film on the bottom electrode by adopting a PVD (physical vapor deposition), ALD (atomic layer deposition) or CVD (chemical vapor deposition) method;
3) depositing a threshold switch layer film on the barrier layer film by adopting a PVD or ALD method;
4) defining a bottom electrode lead-out hole pattern, and etching a bottom electrode lead-out hole on the barrier layer film and the threshold switch layer film according to the pattern;
5) a top electrode pattern is defined and a top electrode is prepared according to the pattern.
The method for defining the patterns in the steps 1), 4) and 5) is to define the patterns on the photoresist by utilizing a photoetching technology.
Further, the preparation method of the bottom electrode and the top electrode comprises PVD and evaporation deposition methods.
The invention provides a bidirectional threshold switch selection device and a preparation method thereof, wherein a barrier layer film and a threshold switch layer film are stacked to form a double-layer structure, so that the current-voltage characteristic of the selection device can be optimized, and the device shows the characteristic of symmetrical bidirectional threshold switch selection. Whether the crossbar array is used for reading a low-resistance state or a high-resistance state, due to the existence of the selection characteristic of the bidirectional threshold switch, the resistance value of the original leakage current path is far larger than the resistance value to be read, so that the leakage current can be effectively inhibited, and misreading is avoided. The device paves the way for realizing the area reduction and large-scale integration of the resistive random access memory.
Drawings
FIGS. 1-5 are schematic diagrams of steps for fabricating a ovonic threshold switch select device in accordance with the present invention;
FIG. 6 is an illustration of the schematic of FIGS. 1-5;
fig. 7 is a schematic diagram of the ovonic threshold switching characteristics of a device.
Detailed Description
This embodiment provides a ovonic threshold switch selection device and a method for fabricating the same, in which the device uses a silicon substrate, uses W as a bottom electrode material, and uses HfO2(or non-stoichiometric oxide thereof) as a barrier layer film material, NbO2 as a threshold switching layer film material, and TiN as a top electrode material.
HfO2And NbO2 are both materials compatible with standard CMOS processes. HfO2The high-K dielectric material is a commonly used high-K dielectric material in a CMOS (complementary metal oxide semiconductor) process, and the resistive random access memory used for preparing the gate dielectric has the advantages of ultra-fast switching speed, high switching ratio and good retention property. NbO2 as usualThe films with selected properties are seen to be simple and very controllable to produce. The advantages of the two materials are combined, the requirements of compatible CMOS (complementary metal oxide semiconductor) processes are met, the characteristic of bidirectional selection can be realized, and the method has important significance for improving the integration density of the resistive random access memory crossbar structure array and realizing large-scale production.
The preparation method of the bidirectional threshold switch selection device comprises the following steps:
1) defining a bottom electrode pattern on the photoresist by utilizing a photoetching technology, depositing a W bottom electrode material on a silicon substrate by adopting a PVD method, wherein the thickness is 70nm, and then removing the photoresist, as shown in figure 1;
2) depositing a layer of HfO on the bottom electrode by ALD method2Barrier layer film material with thickness of 6nm as shown in FIG. 2;
3) depositing a layer of NbO2 bidirectional threshold switch selection material on the barrier layer by using an ALD method to realize bidirectional threshold switching, wherein the thickness of the bidirectional threshold switch selection material is 30nm, and the thickness is shown in figure 3;
4) defining a bottom electrode lead-out hole pattern on the photoresist by using a photoetching technology, etching a bottom electrode lead-out hole on the barrier layer and the threshold switch layer by using a dry etching method, and removing the photoresist, as shown in FIG. 4;
5) defining a top electrode pattern on the photoresist by utilizing a photoetching technology, depositing a TiN top electrode material on the energy band modification layer by adopting a PVD method, wherein the thickness is 100nm, and removing the photoresist to obtain the bidirectional threshold switch selection device, as shown in figure 5.
From the above embodiments, the transition metal oxide barrier layer thin film material and the threshold switching characteristic material may be prepared by using a PVD method or an ALD method, which is capable of being made thinner than the PVD method; the CVD method is adopted for preparing the barrier layer made of organic materials.
As shown in fig. 7, by integrating the threshold switching thin film layer with the barrier thin film layer, the barrier thin film is an insulator at a low voltage, so that the threshold switching thin film cannot be turned on even at a low voltage, and the selection device is in an off state; the barrier layer film can generate the characteristic of larger tunneling current under high voltage, meanwhile, larger current exists under larger voltage, the threshold switch film layer can generate phase change to be a conductor due to the metal insulator transition characteristic, so that the on-state current is further increased, the device is in the on state, and the bidirectional large selection ratio and the proper driving current can be realized by reasonably designing the voltage and current matching of the barrier layer film and the threshold switch film.
The above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person skilled in the art can modify the technical solution of the present invention or substitute the same without departing from the spirit and scope of the present invention, and the scope of the present invention should be determined by the claims.
Claims (10)
1. A bidirectional threshold switch selection device is characterized by comprising a substrate and a bottom electrode positioned on the substrate, wherein a barrier layer film is arranged on the bottom electrode, a threshold switch layer film with threshold switch characteristics is arranged on the barrier layer film, a top electrode is arranged on the threshold switch layer film, the barrier layer film is an insulator under low voltage, the threshold switch layer film cannot be started under low voltage, and the bidirectional threshold switch selection device is in an off state; the barrier layer film generates tunneling current characteristics under high voltage, the threshold switch film layer is subjected to phase change and is changed into a conductor, and on-state current is increased, so that the bidirectional threshold switch selection device is in an on state.
2. The ovonic threshold switch selection device of claim 1 wherein the substrate is silicon.
3. The ovonic threshold switch select device of claim 1, wherein the bottom electrode is a metallic material having a thickness of 50nm to 200 nm.
4. The ovonic threshold switch select device of claim 1, wherein the top electrode is a metallic material having a thickness of 50nm to 200 nm.
5. The ovonic threshold switch select device of claim 1 wherein the barrier layer film is a parylene organic material having a thickness of 200nm to 500 nm.
6. The ovonic threshold switch select device of claim 1, wherein the barrier layer film is TaOx、HfOx、SiOx、Al2O3Or TiO2The thickness is 1nm-100 nm.
7. The ovonic threshold switch select device of claim 1 wherein the threshold switching layer film is VO2、NbO2GeTe, SiTe or ZnTe, the thickness is 1nm-100 nm.
8. The ovonic threshold switch selection device according to claim 3 or 4, wherein said metallic material is Ti, Al, Au, W, Cu, Ta, Pt, Ir, TiN or TaN.
9. A method of making the bidirectional threshold switch selection transistor of claim 1, comprising the steps of:
1) defining a bottom electrode pattern, and preparing a bottom electrode on a substrate according to the pattern;
2) depositing a barrier layer film on the bottom electrode by adopting a PVD, ALD or CVD method;
3) depositing a threshold switch layer film on the barrier layer film by adopting a PVD or ALD method;
4) defining a bottom electrode lead-out hole pattern, and etching a bottom electrode lead-out hole on the barrier layer film and the threshold switch layer film according to the pattern;
5) and defining a top electrode pattern, and preparing the top electrode on the modification layer according to the pattern.
10. The method of claim 9, wherein the bottom and top electrodes are formed by PVD and vapor deposition.
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| CN113517402A (en) * | 2021-06-18 | 2021-10-19 | 复旦大学 | Bidirectional threshold symmetric gate and preparation method thereof |
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