CN102593142A - Anti-crosstalk flexible transparent memory array and production method thereof - Google Patents
Anti-crosstalk flexible transparent memory array and production method thereof Download PDFInfo
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- CN102593142A CN102593142A CN2012100683216A CN201210068321A CN102593142A CN 102593142 A CN102593142 A CN 102593142A CN 2012100683216 A CN2012100683216 A CN 2012100683216A CN 201210068321 A CN201210068321 A CN 201210068321A CN 102593142 A CN102593142 A CN 102593142A
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Abstract
The invention discloses an anti-crosstalk flexible transparent memory array and a production method thereof. A transparent selectron serves as a driving tube, repeated erasing and writing of a circuit on memory cells can be achieved through the bidirectional continuity characteristic of the selectron, and a problem of crosstalk is resolved. As the driving tube of the memory array, the selectron resolves the problems of large area of transistors and restriction of unipolar operation of diodes and is adapted to scaling-down process of components. Moreover, the production method of the selectron is simple and cost is saved. The anti-crosstalk flexible transparent memory array uses flexible transparent materials and combines a flexible transparent electronic system, the driving tube and a resistance random access memory. Besides the characteristic of the resistance random access memory, the anti-crosstalk flexible transparent memory array also has the advantages of being flexible, transparent and the like, and particularly resolves the memory crosstalk problem in an integrated array. The produced memory array can be used in electronic paper, flexible transparent display, and other relative electronic systems widely.
Description
Technical field
The present invention relates to the flexible and transparent electronic system, be specifically related to flexible and transparent storage array of a kind of anti-crosstalk and preparation method thereof.
Background technology
In recent years, integrated circuit obtains swift and violent development, and it is used more and more widely.Meanwhile electronic system also combines with increasing other type systematics, and then brings into play more strong functions and effect.Under this development trend, a kind of special Circuits System---the flexible and transparent electronic system is arisen at the historic moment.The flexible and transparent electronic system has the printing opacity function when curling or stretching; Therefore can cover and be installed on arbitrary surface or the moving-member; Expanded the range of application of electronic system greatly; Especially have broad application prospects in fields such as flexible and transparent demonstrations, for example, had electronic products such as flexible transparent mobile phone and flexible transparent plate computer to come out at present.
Resistance-variable storing device RRAM is the non-volatile type memories of a kind of new ideas, and the memory cell of resistance-variable storing device is generally metal/function film layer/metal three-decker, claims sandwich structure.Its basic principle is, the resistance of material can be under the excitation of applied voltage or electric current at high-impedance state (" 0 " state) and low resistance state (one state) but between realize inverse conversion, thereby realize the function of storage (deposit " 0 " or deposit " 1 ").Compare with traditional flash, resistance-variable storing device has structure and advantage such as preparation technology is simple, speed is fast, operating voltage is low.Simultaneously, resistance-variable storing device is because simple cellular construction can adopt cross array structure to be prepared into storage array.This cross array structure technology is simple, density is high and have geometric ratio reduction capability preferably, has embodied overlapping crossed array of preparation multilayer and three-dimensional integrated potentiality.If but be applied directly to the storage array of preparation in the circuit, then can crosstalk and the leakage current problem causes the integrated circuit can't operate as normal because of existing in the array.Integrated array with the memory of 2x2 is an example, when one in four adjacent memories be that high resistant and other three are when being low resistive state, when reading the resistance of high-impedance state; Electric current no longer passes through the memory of this high resistant; But the memory of three low-resistances around passing through forms current channel, misreads thereby cause; Here it is crosstalk phenomenon, as shown in Figure 1.In fact, crosstalking not is to only occur on the memory of this high resistant adjacent with the memory of three low-resistances, this current channel that the memory of three low-resistances forms to around other high-impedance state also can be influential.For adapting to the scaled down of device, the integrated and high reliability of high density is necessary on storage array, to introduce driving tube to solve cross-interference issue.Driving tube plays a part to select and isolates in circuit, and when to the storage operation of high resistant, driving tube is opened, and has so just selected the memory of action required; When to the storage operation of low-resistance, driving tube is closed, and avoids the misoperation of unit on every side and generation read and crosstalks, and plays a part to isolate, thereby has solved the cross-interference issue in the integrated array effectively.
In recent years, there is article to report to be prepared in transistor and the storage array of resistance-variable storing device or diode and resistance-variable storing device on flexible substrate, the silica-based and glass substrate.But owing to the electrode film (great majority are metal) or the dielectric layer material of the transistor that uses as driving tube or diode and resistance change device is not transparent, so can not reach the effect of flexible and transparent.In addition, transistorized production process is complicated, needs through pyroprocess, and energy consumption is more.Diode is then because of its rectification characteristic, and requiring the RRAM device must be unipolarity or nonpolarity (promptly must be able to use the existing storage unit of different electric compacting erasable of same polarity), otherwise can only realize that once writing repeatedly of memory cell read.These deficiencies have all limited the range of application of storage array to a certain extent.
Summary of the invention
In order to overcome deficiency of the prior art, the invention provides a kind of flexible and transparent storage array that solves the circuit cross-interference issue and preparation method thereof, with application and the existing way that changes current device, make the flexible portable storage of anti-crosstalk become possibility.
One object of the present invention is to provide a kind of flexible and transparent storage array of anti-crosstalk.
Flexible and transparent storage array of the present invention comprises: the substrate of flexible and transparent; Be formed on the hearth electrode of m strip on the substrate; Be formed on the functional layer on the hearth electrode; Be formed on the electrode layer on the functional layer; Hearth electrode, functional layer and electrode layer constitute transparent selection pipe; Be formed on the resistance-change memory layer on the electrode layer; The top electrode of n the strip that is formed on the resistance-change memory layer and intersects with hearth electrode; The extraction electrode that penetrates resistance-change memory layer, electrode layer and functional layer and link to each other with hearth electrode; Isolation side walls between the sidewall of extraction electrode and resistance-change memory layer and electrode layer; Electrode layer, resistance-change memory layer and top electrode constitute transparent resistance-variable storing device, and said structure all adopts material transparent, and the part that the top electrode of the hearth electrode of a m strip and n strip intersects forms the storage array of m*n, and wherein, m and n are natural number.
Select pipe and resistance-change memory layer common electrode layer, electrode layer is as the top electrode of selecting pipe, and the while is as the top electrode of resistance-variable storing device.
Substrate is the material of Parylene flexible and transparents such as (Parylene), and a kind of as in the plastics of polyimides PI film, dimethyl silicone polymer PDMS film, polyethylene terephtalate film, PEN PEN film etc. and the elastomeric material.
Select pipe to be that the selection pipe of flexible and transparent, the material of hearth electrode are that ZAO, tin indium oxide ITO, graphene film and conducting polymer composite gather a kind of in the transparent electric conducting material such as enedioxy thiophene PEDOT, the material of functional layer is titanium dioxide TiO
2Or vanadium dioxide VO
2Etc. transparent transition metal oxide.
Said resistance-variable storing device is the transparent organic resistive random access memory with bipolar switch function.
Electrode layer adopts ZAO, tin indium oxide ITO, graphene film and conducting polymer composite to gather a kind of in the transparent electric conducting material such as enedioxy thiophene PEDOT; The material of resistance-change memory layer is that parylene polymer is a kind of in Parylene C type, Parylene N type and the Parylene D type material, and the material of top electrode is Al-Doped ZnO ZAO.
The material of the resistance-change memory layer of resistance-variable storing device adopts the insulation with resistance change characteristic, transparent organic material, and the preparation process does not relate to high temperature, has therefore reduced energy consumption.
The present invention adopts and selects pipe as driving tube, select the characteristic of the two-way admittance of pipe realized circuit to memory cell repeat wipe and write, and solved cross-interference issue.Select the driving tube of pipe, solved the restriction that the transistor area occupied is big, the diode unipolarity is operated, can adapt to the scaled process of device as storage array, and, select the preparation technology of pipe simple, save cost.
Flexible and transparent storage array of the present invention " flexible and transparent electronic system ", " driving tube " and " resistance-variable storing device " triplicity together; It is except the characteristic with resistance-variable storing device itself; Also possess flexibility, advantage such as transparent; Especially solved the problem that memory is crosstalked in integrated array, the storage array of preparation can be widely used in electronic paper (e-paper), flexible and transparent shows in (for example electronic display) and other associated electrical systems.
Another object of the present invention is to provide a kind of preparation method of flexible and transparent storage array of anti-crosstalk.
The preparation method of the flexible and transparent storage array of anti-crosstalk of the present invention may further comprise the steps:
1) substrate of formation flexible and transparent on the substrate of silicon or glass;
2) conductive layer of growth one deck flexible and transparent on substrate, photolithography patterning, the hearth electrode of m strip of formation, m is a natural number;
3) the transparent sull of sputter thickness 50～120nm on hearth electrode forms functional layer;
4) transparent electrically-conductive film of sputter thickness 100～300nm on functional layer forms electrode layer, thereby has prepared transparent selection pipe;
5) apply one deck photoresist, photoetching also is etched to the upper surface of hearth electrode, forms through hole;
6) resistance of deposition thickness 30～60nm becomes material, forms the resistance-change memory layer;
7) the part resistance of chemical wet etching on hearth electrode becomes material, thereby defines the through hole of drawing of hearth electrode, simultaneously, forms isolation side walls;
8) conductive layer of growth flexible and transparent on the resistance-change memory layer, photolithography patterning forms the top electrode of n strip, forms the extraction electrode of hearth electrode simultaneously, and n is a natural number;
9) substrate and the substrate of separation flexible and transparent.
Beneficial effect of the present invention:
1) not only environmental protection but also save manufacturing cost, and device is the flexible and transparent structure, can it be produced on transparent equipment or the article through transparent packaging technology, especially can promote Display Technique of new generation, is the environmental protection device that adapts to future development;
2) when realizing technological merit such as flexible, transparent, solved the cross-interference issue in the integrated array effectively, and it is bigger to select to manage the program window of array, makes its practicability more;
3) preparation process relates to high-temperature technology hardly, has reduced energy consumption, has saved preparation time, and has favorable compatibility with existing technology.
Description of drawings
The sketch map of Fig. 1 for occurring crosstalking in the integrated array of existing memory;
Fig. 2 is the profile of embodiment of the flexible and transparent storage array of anti-crosstalk of the present invention;
Fig. 3 to Figure 10 is the flexible and transparent storage array preparation method's of the anti-crosstalk of the present invention process chart of embodiment.
Embodiment
Below in conjunction with accompanying drawing,, further set forth the present invention through embodiment.
Fig. 2 is the profile of embodiment of the flexible and transparent storage array of a kind of anti-crosstalk provided by the present invention, and as shown in the figure, storage array comprises: the substrate 1 of flexible and transparent; Be formed on the hearth electrode 2 of m strip on the substrate; Be formed on the functional layer 3 on the hearth electrode; Be formed on the electrode layer 4 on the functional layer; Be formed on the resistance-change memory layer 5 on the electrode layer; The top electrode 6 of n the strip that is formed on the resistance-change memory layer and intersects with hearth electrode; The extraction electrode 7 that penetrates resistance-change memory layer, electrode layer and functional layer and link to each other with hearth electrode; Isolation side walls 8 between the sidewall of extraction electrode and resistance-change memory layer and electrode layer; Said structure all adopts the material of flexible and transparent, and the part that the top electrode of the hearth electrode of a m strip and n strip intersects forms the storage array of m*n, and wherein, m and n are natural number.
The preparation method of an embodiment of the flexible and transparent storage array of the disclosed anti-crosstalk of the present invention is following:
1) utilizes polymer (Polymer) chemical vapour deposition (CVD) CVD (Chemical Vapor Deposition) technology; The thick film of deposit Parylene (Parylene) on the substrate 10 of silicon or glass; As the substrate 1 of storage array, thickness is between 2 μ m and 500 μ m, and is as shown in Figure 3;
2) utilize film build method in physical vapor deposition PVD or other ICs (integrated circuit) technology; The conductive layer of the ZAO of the about 60nm thickness of growth one deck on the substrate 1 of Parylene; And adopt standard photolithography techniques to make conducting layer figureization; Form the hearth electrode 2 of 2 strips, as shown in Figure 4;
3) utilize magnetically controlled sputter method, sputtered with Ti O on hearth electrode 2
2Transparent sull forms functional layer 3;
4) utilize magnetically controlled sputter method, the transparent sull of sputter ZAO on functional layer 3 forms electrode layer 4, and thus, having made with ZAO is hearth electrode 2, with TiO
2Be the transparent selection pipe of top electrode for functional layer 3 with the electrode layer 4 of ZAO, as shown in Figure 5;
5) spin coating one deck photoresist, the upper surface that is etched to hearth electrode 2 behind the photolithography patterning stops, and removes photoresist and obtains through hole, and is as shown in Figure 6;
6) utilize Polymer CVD technology, the resistance of growth one deck Parylene C type (Parylene-C) becomes material as resistance-change memory layer 5 on electrode layer 4, and thickness is about 40nm, and is as shown in Figure 7;
7) utilize photoetching technique, adopt lithographic method to remove the part resistance of part on hearth electrode 2 and become material, thereby define the through hole of drawing of hearth electrode; Simultaneously, protected Parylene film can form isolation side walls 8 again, and the wall of through hole is drawn in protection; In order to avoid hearth electrode contacts with the intermediate layer when in through hole, pouring into electric conducting material, remove photoresist, as shown in Figure 8; Not only as the active layer of device, and played the effect of self-isolation protection at this Parylene;
8) utilize conventional photoetching process, physical vapor deposition PVD method sputtering ITO film is adopted in graphical back, the about 100nm of thickness, and the method that employing is peeled off defines the top electrode 6 of 2 strips, forms extraction electrode 7 simultaneously hearth electrode is drawn, and is as shown in Figure 9;
9) separate flexible substrate 1 and silicon or glass substrate 10, obtain the flexible and transparent storage array of anti-crosstalk, shown in figure 10.
Thereby the part that the hearth electrode of the top electrode of two strips and two strips intersects has formed the flexible and transparent storage array of selecting the pipe and the 2*2 of resistance-variable storing device formation.
What should explain at last is: though this specification is described the material that the present invention uses in detail through concrete embodiment, structure and preparation method thereof it should be appreciated by those skilled in the art; Implementation of the present invention is not limited to the description scope of embodiment; In not breaking away from essence of the present invention and spirit, can carry out various modifications and replacement to the present invention, for example; The manufacturing materials of driving tube is changed to organic material by inorganic material, changes other flexible transparent substrates and electrode etc.Its preparation method also is not limited to disclosed content among the embodiment, so protection scope of the present invention is looked the claim scope and defined.
Claims (10)
1. a flexible and transparent storage array is characterized in that, said storage array comprises: the substrate of flexible and transparent (1); Be formed on the hearth electrode (2) of m strip on the substrate; Be formed on the functional layer (3) on the hearth electrode; Be formed on the electrode layer (4) on the functional layer; Hearth electrode, functional layer and electrode layer constitute transparent selection pipe; Be formed on the resistance-change memory layer (5) on the electrode layer; The top electrode (6) of n the strip that is formed on the resistance-change memory layer and intersects with hearth electrode; The extraction electrode that penetrates resistance-change memory layer, electrode layer and functional layer and link to each other (7) with hearth electrode; Isolation side walls (8) between the sidewall of extraction electrode and resistance-change memory layer and electrode layer; Electrode layer, resistance-change memory layer and top electrode constitute transparent resistance-variable storing device, and said structure all adopts material transparent, and the part that the top electrode of the hearth electrode of a m strip and n strip intersects forms the storage array of m*n, and wherein, m and n are natural number.
2. storage array as claimed in claim 1; It is characterized in that; Said substrate is the material of flexible and transparents such as Parylene, and a kind of as in the plastics of polyimides PI film, dimethyl silicone polymer PDMS film, polyethylene terephtalate film, PEN PEN film etc. and the elastomeric material.
3. storage array as claimed in claim 1; It is characterized in that the material of said hearth electrode and electrode layer is respectively Al-Doped ZnO ZAO, tin indium oxide ITO, graphene film and conducting polymer composite and gathers a kind of in the transparent electric conducting material such as enedioxy thiophene PEDOT.
4. storage array as claimed in claim 1 is characterized in that, the material of said functional layer is titanium dioxide TiO
2Or vanadium dioxide VO
2Etc. transparent transition metal oxide.
5. storage array as claimed in claim 1 is characterized in that, the material of said resistance-change memory layer is that parylene polymer is a kind of in Parylene C type, Parylene N type and the Parylene D type material.
6. the preparation method of a flexible and transparent storage array may further comprise the steps:
1) substrate of formation flexible and transparent on the substrate of silicon or glass;
2) conductive layer of growth one deck flexible and transparent on substrate, photolithography patterning, the hearth electrode of m strip of formation, m is a natural number;
3) the transparent sull of sputter on hearth electrode forms functional layer;
4) sputter transparent electrically-conductive film on functional layer forms electrode layer, thereby has prepared transparent selection pipe;
5) apply one deck photoresist, photoetching also is etched to the upper surface of hearth electrode, forms through hole;
6) the deposit resistance becomes material, forms the resistance-change memory layer;
7) the part resistance of chemical wet etching on hearth electrode becomes material, thereby defines the through hole of drawing of hearth electrode, simultaneously, forms isolation side walls;
8) conductive layer of growth flexible and transparent on the resistance-change memory layer, photolithography patterning forms the top electrode of n strip, forms the extraction electrode of hearth electrode simultaneously, and n is a natural number;
9) substrate and the substrate of separation flexible and transparent.
7. preparation method as claimed in claim 6 is characterized in that, in step 1), the thickness of said substrate is between 2～500 μ m.
8. preparation method as claimed in claim 6 is characterized in that, in step 3), the thickness of said functional layer is between 50～120nm.
9. preparation method as claimed in claim 6 is characterized in that, in step 4), the thickness of said electrode layer is between 100～300nm.
10. preparation method as claimed in claim 6 is characterized in that, in step 6), the thickness of said resistance-change memory layer is between 30～60nm.
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Cited By (3)
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| CN110752293A (en) * | 2019-09-27 | 2020-02-04 | 北京大学 | Bidirectional threshold switch selection device and preparation method thereof |
| CN112582444A (en) * | 2020-12-14 | 2021-03-30 | 东南大学 | Three-terminal resistive random access memory capable of inhibiting crosstalk current and preparation method thereof |
| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
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| CN112599664A (en) * | 2020-11-25 | 2021-04-02 | 南京大学 | Ultralow-energy-consumption flexible thin film memristor for simulating nerve synapse and preparation method thereof |
| CN112599664B (en) * | 2020-11-25 | 2023-09-22 | 南京大学 | Ultra-low energy consumption flexible thin film memristor simulating nerve synapses and preparation method thereof |
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