CN110735151A - Preparation method of titanium carbide composite indium zinc sulfide photo-anode - Google Patents
Preparation method of titanium carbide composite indium zinc sulfide photo-anode Download PDFInfo
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- CN110735151A CN110735151A CN201910535607.2A CN201910535607A CN110735151A CN 110735151 A CN110735151 A CN 110735151A CN 201910535607 A CN201910535607 A CN 201910535607A CN 110735151 A CN110735151 A CN 110735151A
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- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 title claims abstract description 41
- UDWJTDBVEGNWAB-UHFFFAOYSA-N zinc indium(3+) sulfide Chemical compound [S-2].[Zn+2].[In+3] UDWJTDBVEGNWAB-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 14
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims abstract description 14
- 239000004005 microsphere Substances 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000005406 washing Methods 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011592 zinc chloride Substances 0.000 claims abstract description 8
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000005074 zinc chloride Nutrition 0.000 claims abstract description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000000047 product Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004108 freeze drying Methods 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 238000007598 dipping method Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 238000000464 low-speed centrifugation Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000006228 supernatant Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000012986 modification Methods 0.000 claims description 3
- 230000004048 modification Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 3
- 239000012295 chemical reaction liquid Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000000703 high-speed centrifugation Methods 0.000 claims description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- UKCIUOYPDVLQFW-UHFFFAOYSA-K indium(3+);trichloride;tetrahydrate Chemical compound O.O.O.O.Cl[In](Cl)Cl UKCIUOYPDVLQFW-UHFFFAOYSA-K 0.000 claims description 2
- 229910004349 Ti-Al Inorganic materials 0.000 claims 1
- 229910009818 Ti3AlC2 Inorganic materials 0.000 claims 1
- 229910004692 Ti—Al Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000001338 self-assembly Methods 0.000 claims 1
- -1 sulfide compound Chemical class 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000004502 linear sweep voltammetry Methods 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/20—Carbon compounds
- B01J27/22—Carbides
-
- B01J35/33—
-
- B01J35/39—
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
Abstract
The invention discloses a preparation method of titanium carbide composite indium zinc sulfide photoanode, which comprises the following steps of dispersing titanium aluminum carbide in hydrofluoric acid, repeatedly centrifuging, washing and drying to obtain titanium carbide microspheres, b preparing a hydrothermal reaction solution by taking indium chloride, zinc chloride and thioacetamide as raw materials, adding the reaction solution and fluorine-doped tin dioxide (FTO) conductive glass into a reaction kettle to perform hydrothermal reaction, cleaning and drying after the hydrothermal reaction is finished to obtain an indium zinc sulfide photoanode, c placing the indium zinc sulfide photoanode into a titanium carbide solution to be soaked, cleaned and dried to obtain the titanium carbide composite indium zinc sulfide photoanode.
Description
Technical Field
The invention belongs to the technical field of photoelectric materials, and particularly relates to a preparation method of titanium carbide composite indium zinc sulfide photoanodes and application of the photoanodes in photoelectrocatalysis decomposition water.
Background
The solar energy is used as clean renewable energy sources, the storage capacity of the solar energy is tens of thousands times of that of other renewable energy sources, meanwhile, the solar energy hardly releases greenhouse gases in the using process, the solar energy is beneficial to relieving environmental problems such as environmental pollution caused by mass use of petroleum and greenhouse effect caused by fuel combustion, and the like, and the solar energy occupies an important position in the renewable energy source industry.
The semiconductor photoelectric functional material has photoconduction and photovoltaic effects, and the photoelectric effect is determined by the behavior characteristic that the semiconductor material generates photon-generated carriers after being excited by enough energy of light, so that the possibility is provided for utilizing solar energy. The semiconductor photoelectric functional material is used for converting solar energy into chemical energy, and has important research significance and practical value for solving the current energy crisis and environmental problems.
The oxide material is generally stable, the preparation method is simple, the cost is low, is concerned by people, and mainly focuses on titanium dioxide, zinc oxide, iron oxide, indium zinc sulfide and the like, wherein indium zinc sulfide (Zn) is used for preparing the oxide materialxIn2-xS4) Has the characteristics of rich reserves and good stability in neutral solution. ZnxIn2-xS4 ternary metal sulfides, with direct forbidden band width of 2.4-2.7 eV and indirect forbidden band width of 1.8-2.1 eV, and has the advantages of proper forbidden band width, good visible light response and stability, and good application prospect in the fields of photocatalysis and photoelectrocatalysisxIn2-xS4Semiconductors are mainly used for photocatalyst research, and relatively few researches have been conducted as photoelectrode materials. ZnxIn2-xS4The semiconductor is mainly researched as a photoelectrode material, and is researched in the process of preparing Zn by adopting different methodsxIn2-xS4The thin film photoelectrode and basic properties and performances of the prepared thin film photoelectrode are researched mainly by a spray pyrolysis method, a chemical bath deposition method, a continuous ion layer adsorption reaction method, an electrodeposition method, a spin coating method and a hydrothermal method, and in addition, researches mainly focus on ZnxIn2-xS4Thin film photoelectrodeAnd (5) modifying.
Disclosure of Invention
In order to promote the photoelectrocatalysis water decomposition efficiency of the indium zinc sulfide photoanode, the invention aims to provide a preparation method of titanium carbide composite indium zinc sulfide photoanodes, and the photocurrent of the photoanode is improved by titanium carbide.
The technical solution adopted by the invention is as follows:
(1) dispersing titanium aluminum carbide in hydrofluoric acid, stirring for 24 hours, obtaining a titanium carbide initial product through hydrogen fluoride etching, then performing centrifugal treatment and water washing until the pH value of the solution is more than or equal to 6, performing freeze drying, then dispersing the obtained titanium carbide initial product in dimethyl sulfoxide solution, stirring for 20 hours, then performing high-speed centrifugal treatment and deionized water washing to obtain titanium carbide microspheres, performing steps to disperse the obtained titanium carbide microspheres with deionized water, performing ultrasonic treatment under the protection of nitrogen, and then performing low-speed centrifugation to obtain supernatant for freeze drying to obtain titanium carbide microspheres with better single-layer property;
(2) adding InCl3(indium chloride), ZnCl2(Zinc chloride) and CH3CSNH2Preparing aqueous solution from (TAA, thioacetamide) according to a certain proportion of , transferring the aqueous solution into a hydrothermal reaction kettle, placing fluorine-doped tin dioxide conductive glass (FTO) into reaction liquid for hydrothermal reaction, cooling to room temperature, cleaning and drying to obtain an indium zinc sulfide/FTO electrode;
(3) dipping the indium zinc sulfide/FTO electrode prepared in the step 2) in a titanium carbide solution for modification, cleaning and drying to obtain a titanium carbide composite indium zinc sulfide photoanode;
in the step (1): the purity of the titanium aluminum carbide is 98 percent, and the mesh number is 200;
in the step (1): the high-speed centrifugation is preferably 12000 r/min, and the low-speed centrifugation is preferably 1000 r/min;
in the step (2): the indium chloride is indium chloride tetrahydrate, the molar concentration is preferably 10-20mmol/L, the molar concentration of zinc chloride is preferably 5-10mmol/L, and the molar concentration of thioacetamide is preferably 20-40 mmol/L;
in the step (2): the hydrothermal reaction temperature is preferably 160 ℃, the hydrothermal reaction time is preferably 4-8 hours, and the heating rate is controlled to be 2-5 ℃/min;
in the step (2): the chemical formula of the indium zinc sulfide is ZnxIn2-xS4；
In the step (3): the dipping time is preferably 3-100 seconds;
the beneficial technical effects of the invention are as follows:
according to the invention, indium zinc sulfide grows on the surface of the FTO conductive glass, and a heterojunction structure is formed by impregnating titanium carbide, so that photoproduction electrons and photoproduction holes can be effectively separated. Titanium carbide and indium zinc sulfide are used for photoelectrocatalytic decomposition of water to produce hydrogen, so that the density of carriers can be effectively increased, and self-recombination of photon-generated carriers is reduced, thereby promoting precipitation reaction on the surface of the photo-anode.
Drawings
FIG. 1 shows the Zn obtainedxIn2-xS4A scanning electron microscope photo of the TiC photoelectrode;
FIG. 2 shows the Zn obtainedxIn2-xS4Linear sweep voltammetry of/TiC photoelectrode and comparative electrode under light.
Detailed Description
In order to make the technical purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention is further illustrated in steps with reference to specific examples, but the examples are intended to explain the present invention and should not be construed as limiting the present invention, and those who do not specify specific techniques or conditions in the examples are performed according to techniques or conditions described in documents in the art or according to product specifications.
The preparation method of titanium carbide composite indium zinc sulfide photoanode comprises the following steps:
(1) dispersing 0.1mol of titanium aluminum carbide in 1mol of hydrofluoric acid at room temperature, stirring for 24 hours, placing in a centrifuge again, centrifuging for 10 minutes at 10000 r/min, washing the obtained solution with water until the pH value is more than or equal to 6, and freeze-drying to obtain a titanium carbide initial product; dispersing the initial titanium carbide product in 20mL of dimethyl sulfoxide solution, stirring for 20 hours, placing in a centrifuge, centrifuging at high speed of 12000 r/min for 10 minutes, and washing with water for 4 to 5 times to obtain titanium carbide microspheres; dispersing titanium carbide microspheres in 50mL of deionized water, performing ultrasonic treatment for 6 hours under the protection of nitrogen, placing the mixture in a centrifuge, performing low-speed centrifugation for 20 minutes at 3500 rpm, taking supernatant liquid, placing the supernatant liquid in a freeze dryer, and performing freeze drying for 12 hours to obtain the titanium carbide microspheres with better single-layer property.
(2) Taking 100mL of aqueous solution containing 20mM indium chloride, 10mM zinc chloride and 40mM thioacetamide, and stirring for 10 minutes to prepare a hydrothermal reaction solution; placing the fluorine-doped tin dioxide conductive glass in a 50mL high-pressure reaction kettle with the load surface facing downwards, adding 20mL of hydrothermal reaction solution, and then heating the reaction kettle at 160 ℃ for 6 hours; and after the hydrothermal reaction is finished, taking out the conductive glass, repeatedly washing the conductive glass by using absolute ethyl alcohol and deionized water respectively, and drying the conductive glass for 4 hours at the temperature of 50 ℃ to obtain the indium zinc sulfide/FTO electrode.
(3) Dispersing 0.5g of the titanium carbide microspheres obtained in the step (1) in 10mL of deionized water to prepare a titanium carbide solution; and (3) dipping the indium zinc sulfide/FTO electrode prepared in the step (2) in a titanium carbide solution for 10S to carry out surface modification treatment, washing with deionized water, and drying at 50 ℃ for 4h to obtain the titanium carbide composite indium zinc sulfide photoanode.
Claims (7)
- The preparation method of the titanium carbide composite indium zinc sulfide photoanode is characterized by firstly preparing titanium carbide microspheres with a layered structure, depositing two-dimensional flaky indium zinc sulfide on the surface of FTO conductive glass to serve as the photoanode, and then modifying a titanium carbide material on the surface of an indium zinc sulfide material through a self-assembly effect, and comprises the following steps of:step 1) dispersing titanium aluminum carbide in hydrofluoric acid, stirring for 24 hours, obtaining a titanium carbide initial product through hydrogen fluoride etching, then performing centrifugal treatment and water washing until the pH value of the solution is more than or equal to 6, performing freeze drying, then dispersing the obtained titanium carbide initial product in a dimethyl sulfoxide solution, stirring for 20 hours, then performing high-speed centrifugal treatment and deionized water washing to obtain titanium carbide microspheres, and further , dispersing the obtained titanium carbide microspheres in deionized water, performing ultrasonic treatment under the protection of nitrogen, then performing low-speed centrifugal action, and taking supernatant for freeze drying to obtain titanium carbide microspheres with better single-layer property;step 2) adding InCl3(indium chloride), ZnCl2(Zinc chloride) and CH3CSNH2Preparing aqueous solution from (TAA, thioacetamide) according to a certain proportion of , transferring the aqueous solution into a hydrothermal reaction kettle, placing fluorine-doped tin dioxide conductive glass (FTO) into reaction liquid for hydrothermal reaction, cooling to room temperature, cleaning and drying to obtain an indium zinc sulfide/FTO electrode;and 3) placing the indium zinc sulfide/FTO electrode prepared in the step 2) into the titanium carbide solution in the step 1) for dipping modification, cleaning and drying to obtain the titanium carbide composite indium zinc sulfide photoanode.
- 2. The method for preparing Ti-carbide-InZnS photoanodes as claimed in claim 1, wherein the Ti-Al carbide in step (1) has a chemical formula of Ti3AlC2Purity 98%, mesh number 200.
- 3. The method for preparing Ti-carbide composite InZn-sulfide photoanodes as claimed in claim 1, wherein the high speed centrifugation in step (1) is 12000 rpm, and the low speed centrifugation is 3500 rpm.
- 4. The method for preparing kinds of titanium carbide composite indium zinc sulfide photoanodes, as claimed in claim 1, wherein the indium chloride in step (2) is indium chloride tetrahydrate with a molar concentration of 10-20mmol/L, zinc chloride with a molar concentration of 5-10mmol/L, thioacetamide with a molar concentration of 20-40 mmol/L.
- 5. The method for preparing titanium carbide composite indium-zinc sulfide photoanodes as claimed in claim 1, wherein the hydrothermal reaction conditions in step (2) are 160 ℃, the temperature is kept constant for 4-8 hours, and the heating rate is controlled to be 2-5 ℃/min.
- 6. Root of herbaceous plantThe method for preparing Ti carbide-ZnS photoanodes as claimed in claim 1, wherein the InZn sulfide compound in step (2) has a chemical formula ZnxIn2-xS4。
- 7. The method for preparing kinds of titanium carbide composite indium-zinc sulfide photoanodes as claimed in claim 1, wherein the dipping time in step (3) is 3-100 seconds.
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Cited By (5)
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| CN112844412A (en) * | 2021-01-13 | 2021-05-28 | 华南师范大学 | Sulfur indium zinc-MXene quantum dot composite photocatalyst and preparation method and application thereof |
| CN112892555A (en) * | 2021-01-13 | 2021-06-04 | 华南师范大学 | ZnIn synergistically modified by cavity promoter Ti (IV) and electron promoter MXene QDs2S4Photocatalyst and process for producing the same |
| CN113070074A (en) * | 2021-03-31 | 2021-07-06 | 青岛大学 | Ti3C2-MXene/ZnIn2S4Preparation method and application of composite photocatalyst |
| CN113351227A (en) * | 2021-06-24 | 2021-09-07 | 中南民族大学 | Ultra-thin Ti3C2nanosheet/ZnIn2S4Preparation method of flower ball composite photocatalyst |
| CN117025014A (en) * | 2023-07-28 | 2023-11-10 | 浙江大学 | Preparation method of neodymium-iron-boron magnet anti-corrosion composite slurry |
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