CN110649153A - 一种多层金属薄膜键合层结构及其制备方法 - Google Patents
一种多层金属薄膜键合层结构及其制备方法 Download PDFInfo
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- CN110649153A CN110649153A CN201910916430.0A CN201910916430A CN110649153A CN 110649153 A CN110649153 A CN 110649153A CN 201910916430 A CN201910916430 A CN 201910916430A CN 110649153 A CN110649153 A CN 110649153A
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- piezoelectric wafer
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- bonding
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 66
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 41
- 229910052718 tin Inorganic materials 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 31
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims description 110
- 238000000034 method Methods 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 239000011135 tin Substances 0.000 description 50
- 239000011651 chromium Substances 0.000 description 45
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201910916430.0A CN110649153B (zh) | 2019-09-26 | 2019-09-26 | 一种多层金属薄膜键合层结构及其制备方法 |
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CN201910916430.0A CN110649153B (zh) | 2019-09-26 | 2019-09-26 | 一种多层金属薄膜键合层结构及其制备方法 |
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CN110649153A true CN110649153A (zh) | 2020-01-03 |
CN110649153B CN110649153B (zh) | 2022-09-30 |
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Citations (17)
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---|---|---|---|---|
US3798746A (en) * | 1972-10-10 | 1974-03-26 | Rca Corp | Process of making acousto-optic devices |
JPH06244226A (ja) * | 1993-02-19 | 1994-09-02 | Hitachi Ltd | 半導体装置及び半導体装置の製造方法 |
JPH07169967A (ja) * | 1993-12-16 | 1995-07-04 | Matsushita Electric Ind Co Ltd | 液晶表示装置及びその製造方法 |
JPH07307260A (ja) * | 1994-05-13 | 1995-11-21 | Canon Inc | 接合体及びその形成法 |
JPH09181348A (ja) * | 1995-12-25 | 1997-07-11 | Hamamatsu Photonics Kk | フォトダイオード |
JP2003243961A (ja) * | 2002-02-15 | 2003-08-29 | Oki Electric Ind Co Ltd | 弾性表面波素子 |
US20040209452A1 (en) * | 2002-10-23 | 2004-10-21 | Ccube Digital Co., Ltd. | Solder terminal and fabricating method thereof |
CN101924530A (zh) * | 2009-05-13 | 2010-12-22 | 精工电子有限公司 | 电子部件、电子部件制造方法及电子装置 |
US20140339962A1 (en) * | 2013-05-14 | 2014-11-20 | Tdk Corporation | Piezoelectric device |
JP2015053570A (ja) * | 2013-09-06 | 2015-03-19 | 京セラクリスタルデバイス株式会社 | 圧電素子の製造方法 |
CN106908970A (zh) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
CN106914625A (zh) * | 2017-01-19 | 2017-07-04 | 中南大学 | 一种钛/铝梯度材料及其制备方法 |
JP2017201686A (ja) * | 2016-04-28 | 2017-11-09 | 三ツ星ベルト株式会社 | メタライズ基板及びその製造方法 |
CN207338396U (zh) * | 2017-09-27 | 2018-05-08 | 佛山市艾佛光通科技有限公司 | 一种具有外延层的复合衬底 |
CN108098270A (zh) * | 2017-12-18 | 2018-06-01 | 武汉理工大学 | 一种Ti-Al体系梯度防护屏材料的制备方法 |
US20180375491A1 (en) * | 2017-06-26 | 2018-12-27 | Taiyo Yuden Co., Ltd. | Acoustic wave resonator, filter, and multiplexer |
CN109818590A (zh) * | 2019-03-13 | 2019-05-28 | 电子科技大学 | 具有应力缓冲层的单晶薄膜制备方法、单晶薄膜及谐振器 |
-
2019
- 2019-09-26 CN CN201910916430.0A patent/CN110649153B/zh active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3798746A (en) * | 1972-10-10 | 1974-03-26 | Rca Corp | Process of making acousto-optic devices |
JPH06244226A (ja) * | 1993-02-19 | 1994-09-02 | Hitachi Ltd | 半導体装置及び半導体装置の製造方法 |
JPH07169967A (ja) * | 1993-12-16 | 1995-07-04 | Matsushita Electric Ind Co Ltd | 液晶表示装置及びその製造方法 |
JPH07307260A (ja) * | 1994-05-13 | 1995-11-21 | Canon Inc | 接合体及びその形成法 |
JPH09181348A (ja) * | 1995-12-25 | 1997-07-11 | Hamamatsu Photonics Kk | フォトダイオード |
JP2003243961A (ja) * | 2002-02-15 | 2003-08-29 | Oki Electric Ind Co Ltd | 弾性表面波素子 |
US20040209452A1 (en) * | 2002-10-23 | 2004-10-21 | Ccube Digital Co., Ltd. | Solder terminal and fabricating method thereof |
CN101924530A (zh) * | 2009-05-13 | 2010-12-22 | 精工电子有限公司 | 电子部件、电子部件制造方法及电子装置 |
US20140339962A1 (en) * | 2013-05-14 | 2014-11-20 | Tdk Corporation | Piezoelectric device |
JP2015053570A (ja) * | 2013-09-06 | 2015-03-19 | 京セラクリスタルデバイス株式会社 | 圧電素子の製造方法 |
JP2017201686A (ja) * | 2016-04-28 | 2017-11-09 | 三ツ星ベルト株式会社 | メタライズ基板及びその製造方法 |
CN106914625A (zh) * | 2017-01-19 | 2017-07-04 | 中南大学 | 一种钛/铝梯度材料及其制备方法 |
CN106908970A (zh) * | 2017-03-06 | 2017-06-30 | 中国电子科技集团公司第二十六研究所 | 声光晶体与换能器键合结构 |
US20180375491A1 (en) * | 2017-06-26 | 2018-12-27 | Taiyo Yuden Co., Ltd. | Acoustic wave resonator, filter, and multiplexer |
CN207338396U (zh) * | 2017-09-27 | 2018-05-08 | 佛山市艾佛光通科技有限公司 | 一种具有外延层的复合衬底 |
CN108098270A (zh) * | 2017-12-18 | 2018-06-01 | 武汉理工大学 | 一种Ti-Al体系梯度防护屏材料的制备方法 |
CN109818590A (zh) * | 2019-03-13 | 2019-05-28 | 电子科技大学 | 具有应力缓冲层的单晶薄膜制备方法、单晶薄膜及谐振器 |
Non-Patent Citations (3)
Title |
---|
K.KOH;S.OKAMOTO;Y.AOKI ET AL.: "Co-integration of acoustic-optic functional devices with semiconductor photodetector using film bonding", 《2002 IEEE ULTRASONICS SYMPOSIUM》 * |
ZHOU,XINGLI;WANG,LIKUN;LIAO,QINGWEI ET AL.: "Weldability modification of conductive silver adhesion for piezoelectric composite material by co-doping of metal material and oxide material", 《CHEMICAL PHYSICS》 * |
陆川,鲜晓军,张银中 等: "通过热应力分析改善AOTF键合层附着力", 《压电与声光》 * |
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Effective date of registration: 20220524 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Applicant after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Applicant before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Country or region after: China Address before: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Country or region before: China |
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