CN110646674B - Radio frequency chip pin impedance test method - Google Patents
Radio frequency chip pin impedance test method Download PDFInfo
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- CN110646674B CN110646674B CN201910982182.XA CN201910982182A CN110646674B CN 110646674 B CN110646674 B CN 110646674B CN 201910982182 A CN201910982182 A CN 201910982182A CN 110646674 B CN110646674 B CN 110646674B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0425—Test clips, e.g. for IC's
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- Monitoring And Testing Of Transmission In General (AREA)
Abstract
The application is suitable for the technical field of chip testing, and provides a radio frequency chip pin impedance testing method, which comprises the following steps: testing scattering parameters of a single test fixture on the test board; testing impedance parameters of a connection port of the load tuner and the test fixture; and obtaining the load impedance of the output pin of the radio frequency chip according to the scattering parameter and the impedance parameter of the test fixture. By the method, the accurate load impedance of the output pin of the radio frequency chip can be obtained, and the design and debugging of the output matching circuit can be effectively guided.
Description
Technical Field
The invention belongs to the technical field of chip testing, and particularly relates to a radio frequency chip pin impedance testing method.
Background
At present, as shown in fig. 1, a test system for performing Loadpull on a radio frequency chip mounted on a Printed Circuit Board (PCB) directly connects a load Tuner to a PCB test Board, and since a radio frequency parameter of a connection Circuit on the PCB test Board cannot be accurately obtained, an accurate Loadpull at a pin of the radio frequency chip cannot be obtained, so that design and debugging of an output matching Circuit cannot be effectively guided.
Disclosure of Invention
In view of this, the embodiment of the present invention provides a method for testing pin impedance of a radio frequency chip, so as to solve the problem that an accurate Loadpull at a pin of the radio frequency chip cannot be obtained in the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a radio frequency chip pin impedance test method comprises the following steps:
testing scattering parameters of a single test fixture on the test board;
testing impedance parameters of a connection port of a load tuner and the test fixture;
and obtaining the load impedance of the output pin of the radio frequency chip according to the scattering parameter of the test fixture and the impedance parameter.
In one embodiment, the load impedance of the output pin of the radio frequency chip is obtained by a simulation method or a formula calculation method.
In one embodiment, the simulation method includes:
building an equivalent circuit model in a simulation system, wherein the scattering parameters of the test fixture and the impedance parameters are cascaded;
and simulating to obtain the load impedance of the output pin of the radio frequency chip.
In one embodiment, the formula calculation method includes:
converting the scattering parameters of the test fixture into Z parameters;
and calculating the load impedance of the output pin of the radio frequency chip by using the Z parameter and the impedance parameter.
In one embodiment, the converting the scattering parameter of the test fixture into the Z parameter specifically includes:
is calculated according to the following equation
The formula for converting the scattering parameters of the test fixture into the Z parameters is as follows:
wherein S is12For reverse transmission coefficient, S21Is a forward transmission coefficient, S11For input of reflection coefficient, S22To output reflection coefficient, Z0Is the normalized impedance.
In one embodiment, the calculating the load impedance of the output pin of the radio frequency chip by using the Z parameter and the impedance parameter specifically includes:
calculating the load impedance of the output pin of the radio frequency chip according to the following formula:
wherein Z isoutIs the negative of the output pin of the radio frequency chipLoad impedance, ZtunerAnd the impedance parameter of the connection port of the load tuner and the test fixture.
In one embodiment, the method for testing the scattering parameters of a single test fixture comprises the following steps:
testing scattering parameters of the calibration fixture by using a vector network analyzer;
and converting the scattering parameters of the calibration clamp to obtain the scattering parameters of the test clamp.
In one embodiment, the obtaining of the scattering parameters of the test fixture by the conversion according to the scattering parameters of the calibration fixture specifically includes:
and simulating the scattering parameters of the calibration fixture by utilizing PLTS software to obtain the scattering parameters of the test fixture.
In one embodiment, the impedance parameters of the connection port between the test load tuner and the test fixture are specifically:
and testing a load tuner and the connecting port of the test fixture by using a vector network analyzer to obtain the impedance parameters.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in:
firstly, testing scattering parameters of a single test fixture on a test board, then testing impedance parameters of a connection port of a load tuner and the test fixture, and finally obtaining the load impedance of an output pin of the radio frequency chip according to the scattering parameters and the impedance parameters of the test fixture. By the method, the accurate load impedance of the output pin of the radio frequency chip can be obtained, and the design and debugging of the output matching circuit can be effectively guided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic diagram of a test system of a radio frequency chip Loadpull according to an embodiment of the present invention;
FIG. 2 is a flow chart of a test of pin impedance of an RF chip according to an embodiment of the present invention;
FIG. 3 is a flowchart illustrating the testing of scattering parameters of a test fixture according to an embodiment of the present invention;
FIG. 4 is a flow chart of a simulation method provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of a circuit model built in the simulation system provided by the embodiment of the invention;
fig. 6 is a flowchart of a formula calculation method according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
As shown in fig. 2, the method for testing the pin impedance of the rf chip includes:
step S201, scattering parameters of a single test fixture on the test board are tested.
The scattering parameter is an important parameter in microwave transmission. The scattering parameter comprises the back transmission coefficient S12I.e. isolated; forward transmission coefficient S21I.e. the gain; input reflection coefficient S11I.e. input return loss; output reflection coefficient S22I.e. the output return loss.
When the scattering parameters of a single test fixture are tested, the scattering parameters of the calibration fixture are tested through the vector network analyzer, and then the scattering parameters of the single test fixture are obtained through software by using the scattering parameters of the calibration fixture, for example, the scattering parameters of the single test fixture are obtained through simulation of PLTS software.
And step S202, testing the impedance parameters of the connection port of the load tuner and the test fixture.
And during testing, testing the connecting port of the test load tuner and the test fixture by using the vector network analyzer.
And step S203, obtaining the load impedance of the output pin of the radio frequency chip according to the scattering parameter and the impedance parameter of the test fixture.
Obtaining the load impedance of the output pin of the radio frequency chip by the scattering parameter and the impedance parameter of the test fixture comprises two methods, namely a simulation method (namely, performing simulation by using software) and a formula calculation method (obtaining the load impedance of the output pin of the radio frequency chip by using a formula to deduce and combine the measured parameters).
By the method, the test board with the radio frequency chip can be directly tested, the load impedance of the output pin of the radio frequency chip is obtained, and data reference is provided for design and debugging of the output matching circuit of the radio frequency chip.
As shown in fig. 3, the method of testing scattering parameters of a single test fixture includes:
step S301, a vector network analyzer is used for testing scattering parameters of the calibration fixture.
The calibration fixture is formed by butting two test fixtures, plays a role in calibration, and can obtain scattering parameters of the calibration fixture by using the vector network analyzer during testing.
Step S302, the scattering parameters of the test fixture are obtained through conversion according to the scattering parameters of the calibration fixture, and in the process, the scattering parameters of the test fixture can be obtained through simulation of the scattering parameters of the calibration fixture by utilizing PLTS software.
As shown in fig. 4, the simulation method includes:
step S401, an equivalent circuit model is built in the simulation system, wherein the scattering parameters and the impedance parameters of the test fixture are cascaded.
The radio frequency chip is provided with a plurality of output pins, the plurality of test fixtures are correspondingly connected with the plurality of output pins of the radio frequency chip, when an equivalent circuit model is built, models corresponding to scattering parameters of the plurality of test fixtures are connected in parallel and then connected in series with the corresponding models of the impedance parameters, and therefore cascading of the test fixture parameters and the impedance parameters is completed.
The simulation system can use ADS or other simulation software to simulate, and build a circuit model in the simulation system, as shown in FIG. 5, where S-texture is the scattering parameter of the test Fixture, and Z is the scattering parameter of the test FixturetunerAnd connecting the impedance parameters of the ports of the load Tuner and the test fixture, wherein the port 1 is a port connected with a radio frequency pin, and the port 2 is a port connected with the load Tuner.
Step S402, carrying out simulation to obtain the load impedance of the output pin of the radio frequency chip.
The circuit of fig. 5 is simulated, and the impedance value corresponding to port 1 is the load impedance of the output pin of the rf chip.
As shown in fig. 6, the formula calculation method includes:
step S601, converting the scattering parameter of the test fixture into a Z parameter.
The formula for converting the scattering parameters of the test fixture into the Z parameters is as follows:
wherein S is12For reverse transmission coefficient, S21Is a forward transmission coefficient, S11For input of reflection coefficient, S22To output reflection coefficient, Z0To normalize impedance, Z11、Z12、Z22、Z21Four parameters of the impedance matrix of the two-port network are respectively.
Step S602, calculating the load impedance of the output pin of the radio frequency chip by using the Z parameter and the impedance parameter.
The load impedance of the output pin of the radio frequency chip is as follows:
wherein Z isoutFor the load impedance of the output pin of the RF chip, ZtunerAnd the impedance parameter of the connection port of the load tuner and the test fixture.
And calculating the load impedance of the output pin of the radio frequency chip by a formula.
By the method, the test board with the radio frequency chip can be directly tested, the load impedance of the output pin of the radio frequency chip is obtained, and data reference is provided for design and debugging of the output matching circuit of the radio frequency chip.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. A radio frequency chip pin impedance test method is characterized by comprising the following steps:
testing scattering parameters of a single test fixture on the test board;
testing impedance parameters of a connection port of a load tuner and the test fixture;
obtaining the load impedance of the output pin of the radio frequency chip according to the scattering parameter of the test fixture and the impedance parameter;
the load impedance of the output pin of the radio frequency chip is obtained by a formula calculation method;
the formula calculation method comprises the following steps:
converting the scattering parameters of the test fixture into Z parameters;
and calculating the load impedance of the output pin of the radio frequency chip by using the Z parameter and the impedance parameter.
2. The method for testing the pin impedance of the radio frequency chip according to claim 1, wherein the load impedance of the output pin of the radio frequency chip is obtained by a simulation method.
3. The method for testing the pin impedance of the radio frequency chip according to claim 2, wherein the simulation method comprises:
building an equivalent circuit model in a simulation system, wherein the scattering parameters of the test fixture and the impedance parameters are cascaded;
and simulating to obtain the load impedance of the output pin of the radio frequency chip.
4. The method for testing the pin impedance of the radio frequency chip according to claim 1, wherein the step of converting the scattering parameter of the test fixture into the Z parameter specifically comprises:
is calculated according to the following equation
The formula for converting the scattering parameters of the test fixture into the Z parameters is as follows:
wherein S is12For reverse transmission coefficient, S21Is a forward transmission coefficient, S11For input of reflection coefficient, S22To output reflection coefficient, Z0Is the normalized impedance.
5. The method according to claim 4, wherein the calculating of the load impedance of the output pin of the radio frequency chip by using the Z parameter and the impedance parameter specifically comprises:
calculating the load impedance of the output pin of the radio frequency chip according to the following formula:
wherein Z isoutIs the load impedance of the output pin of the radio frequency chip, ZtunerAnd the impedance parameter of the connection port of the load tuner and the test fixture.
6. The method for testing pin impedance of radio frequency chip according to claim 1, wherein the method for testing scattering parameters of a single test fixture comprises:
testing scattering parameters of the calibration fixture by using a vector network analyzer;
and converting the scattering parameters of the calibration clamp to obtain the scattering parameters of the test clamp.
7. The method for testing the pin impedance of the radio frequency chip according to claim 6, wherein the obtaining of the scattering parameters of the test fixture according to the scattering parameter conversion of the calibration fixture specifically comprises:
and simulating the scattering parameters of the calibration fixture by utilizing PLTS software to obtain the scattering parameters of the test fixture.
8. The method according to claim 1, wherein the impedance parameters of the connection port between the test load tuner and the test fixture are as follows:
and testing a load tuner and the connecting port of the test fixture by using a vector network analyzer to obtain the impedance parameters.
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| CN111208353B (en) * | 2020-01-16 | 2022-03-25 | 精电(河源)显示技术有限公司 | Method for detecting ITO + PIN resistance of COG module |
| CN113504454A (en) * | 2021-06-07 | 2021-10-15 | 深圳市时代速信科技有限公司 | Calibration method of analyzer and chip test method and system |
| CN113311238B (en) * | 2021-07-09 | 2022-07-01 | 福州大学 | Method for measuring impedance between cables by using two ports |
| CN113933684A (en) * | 2021-09-26 | 2022-01-14 | 武汉光谷信息光电子创新中心有限公司 | System and method for testing chip characteristics |
| CN114019197A (en) * | 2021-11-04 | 2022-02-08 | 苏州英嘉通半导体有限公司 | Load traction test fixture and de-embedding method |
| CN116593874B (en) * | 2023-07-17 | 2023-10-13 | 宁波吉品科技有限公司 | Chip testing method |
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| CN102236069B (en) * | 2010-04-27 | 2014-01-08 | 中芯国际集成电路制造(上海)有限公司 | Test system and test method |
| CN103675457B (en) * | 2013-11-05 | 2017-02-08 | 中国人民解放军国防科学技术大学 | Microwave device impedance measurement calibration method |
| CN103617326B (en) * | 2013-12-04 | 2016-08-17 | 西安电子科技大学 | The emulation mode of chip capacitor impedance in power distribution network |
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