CN110632783B - Quantum dot liquid crystal panel and manufacturing method thereof - Google Patents
Quantum dot liquid crystal panel and manufacturing method thereof Download PDFInfo
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- CN110632783B CN110632783B CN201810648166.2A CN201810648166A CN110632783B CN 110632783 B CN110632783 B CN 110632783B CN 201810648166 A CN201810648166 A CN 201810648166A CN 110632783 B CN110632783 B CN 110632783B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
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Abstract
The invention discloses a quantum dot liquid crystal panel and a manufacturing method thereof, wherein the quantum dot liquid crystal panel comprises a liquid crystal box formed by sealing liquid crystal molecules by an upper glass substrate and a lower glass substrate, wherein one surface of the upper glass substrate facing the inside of the box body is sequentially provided with a quantum dot color light filtering layer and an upper polarizing plate, the quantum dot color light filtering layer and the upper polarizing plate are sealed and adhered by a sealant, and a red quantum dot material, a green quantum dot material and a diffusion particle transparent material are arranged on the surface of the quantum dot color light filtering layer in a separated way; the surface of the lower glass substrate facing the inside of the box body is provided with a lower light deflecting plate. The lower grid polarization function layer on the lower glass substrate is manufactured by adopting an exposure etching or nano-imprinting technology. Compared with the quantum dot liquid crystal panel in the prior art, the invention fully utilizes the amorphous silicon material coating for manufacturing the TFT (thin film transistor) element, simplifies the manufacturing process, saves materials, reduces the cost, makes the panel thinner and lighter, and avoids the problems of warping of the liquid crystal panel, dark state light leakage and the like.
Description
Technical Field
The invention relates to a liquid crystal panel technology, in particular to a quantum dot liquid crystal panel and a manufacturing method thereof.
Background
The conventional LCD (Liquid Crystal Display) technology is composed of a set of Backlight (Backlight Unit) and Liquid Crystal panel (Liquid-Crystal Module). The liquid crystal panel is composed of numerous pixel points, liquid crystal molecules are placed in two parallel glass substrates, a TFT (thin film transistor) is arranged on a lower substrate glass, a color filter is arranged on an upper substrate glass, and the rotation direction of the liquid crystal molecules is controlled by changing signals and voltage on the TFT, so that the purpose of controlling whether polarized light of each pixel point is emitted or not is achieved, and the display purpose is achieved.
The existing backlight source is usually a white light LED (WLED), the backlight source illuminates pixel points, liquid crystal is like a curtain, the light transmission degree of the pixel points is controlled, and finally, the white light is filtered out to form one color of red, green and blue by the optical filter. By controlling a series of these pixel points, various colors can be mixed. Therefore, the color performance of the liquid crystal panel is mainly related to two factors, one is the filtering effectiveness of the filter, and the other is the white purity of the backlight source.
In the aspect of the filter, the color of the filter is required to be accurately obtained, namely red (R), green (G) and blue (B) are filtered. For example, the red filter not only filters out green and blue colors of white light, but also allows only red with specific wavelength to pass through, so as to obtain pure red. The current advanced filters can filter out colors very accurately, but are very expensive, and because the color filters generate pure colors by using color photoresist filtering, the color filters also cause obvious attenuation and loss of brightness (the transmittance of the color photoresist is only about 1/3; the technology named WRGB is used for increasing the brightness of a panel in a sense by adding a white pixel (W) without filtering).
On the backlight side, it is desirable to provide a very "white" light source. While white light is known to be actually a mixture of red, blue and green, the currently used WLED (white LED) light source cannot provide a very pure white light source, which is represented by the uneven ratio of red, green and blue. The current white light led (wled) has the defect of simply blue color and generates extra yellow color, thereby limiting the color representation of the liquid crystal panel.
To overcome the drawbacks of white light led (wled), there are now panels directly backlit with red, green and blue led (rgbld), but at the expense of being very expensive and difficult to plug into small mobile devices. Thus, there is a place for quantum dot technology to show a big fist. The existing technology for replacing color light resistance with quantum dot materials is that a backlight uses a monochromatic blue LED as a light source, the characteristic of quantum dots for exciting green light and red light is utilized, the quantum dot materials are used for replacing a traditional optical filter, as shown in the schematic structure diagram of a quantum dot liquid crystal panel in the prior art in figure 8, the structure of the liquid crystal panel displays a partial section unit structure and comprises a liquid crystal box formed by sealing liquid crystal molecules 107 by an upper glass substrate 101 and a lower glass substrate 105, wherein the upper glass substrate 101 is respectively provided with a quantum dot color filter layer 106 and an upper polarizing plate 108 towards the inside of the box body, the quantum dot color filter layer 106 and the upper polarizing plate 108 are sealed and adhered by a sealant, and the surface of the quantum dot color filter layer 106 is provided with a red quantum dot material 102, a green quantum dot material 103 and a diffusion particle transparent material 104 in a separated manner; the surface of the lower glass substrate 105 facing the outside of the box body is provided with a lower polarizing plate 109, and the backlight module 110 arranged at the outer side of the lower glass substrate 105 of the liquid crystal panel emits blue light, and emits red light, green light and blue light after the blue light is emitted to the quantum dot color filter layer 106 through liquid crystal molecules in the box body of the liquid crystal panel so as to display a color image. Because the best quantum dot has more than 90% of light conversion efficiency, excited light has narrow spectrum and accurate color, the problems of impure backlight source and inaccurate color filtering of the optical filter in the prior art are well solved, and the color of the liquid crystal display can be richer and the brightness can be better represented. However, the manufacturing process of the present quantum dot liquid crystal display scheme is still complicated, and materials are also wasted greatly, for example, amorphous silicon is only present in a TFT (thin film transistor) element as a semiconductor layer, and a lower polarizing plate is also required to correspond to a color filter side polarizing function layer, and the lower polarizing plate has poor high temperature and high humidity resistance, and is deformed under long-term irradiation of a backlight module, thereby causing problems of warping and dark-state light leakage of a liquid crystal panel.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention provides a novel quantum dot liquid crystal panel and a manufacturing method thereof, aiming at solving the problems that the manufacturing process is more complicated, the material is greatly wasted, the lower polarizing plate has poor high temperature and high humidity resistance, the warping of the liquid crystal panel and dark state light leakage and the like, and the like.
A quantum dot liquid crystal panel comprises a liquid crystal box formed by sealing liquid crystal molecules by an upper glass substrate and a lower glass substrate, wherein a quantum dot color filter layer and an upper polarizing plate are sequentially arranged on one surface of the upper glass substrate facing the inside of a box body, the quantum dot color filter layer and the upper polarizing plate are sealed and adhered by a sealant, and a red quantum dot material, a green quantum dot material and a diffusion particle transparent material are arranged on the surface of the quantum dot color filter layer in a separated manner; the surface of the lower glass substrate facing the inside of the box body is provided with a lower light deflecting plate.
As a further improved technical scheme, the lower polarizing plate is a lower grid polarizing function layer which is formed by coating an amorphous silicon material on the pixel electrode on the surface of the lower glass substrate, and the lower grid polarizing function layer is axially vertical to the absorption axis of the upper grid polarizing function layer of the color filter layer on the surface of the upper glass substrate.
As a further improved technical scheme, a grid polarization layer absorption axis of the lower grid polarization functional layer is perpendicular to a scanning line on the lower glass substrate and perpendicular to an absorption axis of the upper grid polarization functional layer.
As a further improved technical scheme, a grid polarization layer absorption axis of the lower grid polarization functional layer is arranged in parallel with a scanning line on the lower glass substrate and is vertical to an absorption axis of the upper grid polarization functional layer.
The invention also provides a manufacturing method of the quantum dot liquid crystal panel, which is used for manufacturing the quantum dot liquid crystal panel, and the manufacturing of the lower grid polarization function layer on the lower glass substrate of the quantum dot liquid crystal panel comprises the following steps:
coating an amorphous silicon material on the surface of the lower glass substrate;
coating a photoresist material on the surface of the amorphous silicon material of the lower glass substrate;
exposing the photoresist material coated on the surface of the amorphous silicon material to remove a non-absorption axis region of the photoresist material;
etching the amorphous silicon material coating in the non-absorption axis region of the photoresist material to remove the non-absorption axis region of the amorphous silicon material;
and stripping the photoresist material on the surface of the absorption shaft to form a lower grid polarization function layer on the lower glass substrate.
As a further improved technical solution, in the step of etching the amorphous silicon material coating layer in the non-absorption axis region of the photoresist material to remove the amorphous silicon material in the non-absorption axis region, it is also necessary to simultaneously leave the pixel electrode region not to be etched.
The invention also provides a manufacturing method of the quantum dot liquid crystal panel, which is used for manufacturing the quantum dot liquid crystal panel, and the manufacturing method of the lower grid polarization function layer on the lower glass substrate of the quantum dot liquid crystal panel comprises the following steps:
coating an amorphous silicon material on the surface of the lower glass substrate;
pressing the mold on the surface of the amorphous silicon material of the lower glass substrate to form a convex shape of the absorption axis of the amorphous silicon material;
and removing the mold, and etching the non-absorption axis region of the amorphous silicon material to form the lower grid polarization function layer of the lower glass substrate.
As a further improvement, in the step of etching the non-absorption axis region of the amorphous silicon material after removing the mold, it is also necessary to simultaneously leave the pixel electrode region not to be etched.
Based on the above, because the lower grid polarization function layer is manufactured in the liquid crystal panel box and the amorphous silicon material coating which is the same as that used for manufacturing the TFT (thin film transistor) element is used for manufacturing the amorphous silicon grid polarization function layer, compared with the prior art, the quantum dot liquid crystal panel fully utilizes the amorphous silicon material coating for manufacturing the TFT (thin film transistor) element, simplifies the manufacturing process, saves the manufacturing material, and simultaneously avoids the problems of warping, dark state light leakage and the like caused by poor high temperature and high humidity resistance of the lower polarization plate of the liquid crystal panel.
Drawings
The embodiments of the invention will be further described with reference to the accompanying drawings, in which:
fig. 1 is a schematic structural view of a quantum dot liquid crystal panel according to the present invention.
Fig. 2 is a schematic structural diagram of the principle that the absorption axes of the upper grid polarization functional layer of the color filter layer on the surface of the upper glass substrate and the lower grid polarization functional layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel are vertical.
Fig. 3 is a schematic structural diagram (absorption axis is parallel to signal line) of the principle structure of the lower gate polarization function layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel according to the present invention.
Fig. 4 is a schematic structural diagram (the absorption axis is perpendicular to the signal line) of the principle structure of the lower gate polarization function layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel according to the present invention.
Fig. 5 is a schematic view of a process of fabricating a lower gate polarization function layer (exposure etching) on a surface of a lower glass substrate according to a method of fabricating a quantum dot liquid crystal panel of the present invention.
Fig. 6 is a schematic diagram of a process of manufacturing a lower gate polarization function layer (nanoimprint) on a surface of a lower glass substrate according to a method for manufacturing a quantum dot liquid crystal panel of the present invention.
Fig. 7 is a microscopic view of the actual structure of the lower gate polarization function layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel according to the present invention.
Fig. 8 is a schematic structural view of a quantum dot liquid crystal panel according to a prior art scheme.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
With the development of television technology, Liquid Crystal Displays (LCDs) have been developed unprecedentedly, and people have the following display effects on the liquid crystal displays: i.e. color rendering, puts higher demands on the performance. The conventional Liquid Crystal Display (LCD) technology is composed of a set of Backlight Unit (Backlight Unit) and Liquid Crystal panel (Liquid-Crystal Module). The liquid crystal panel is composed of numerous pixels. The existing backlight source is usually a white light LED (WLED), the backlight source "lights" pixel points, liquid crystal is like a curtain, the light transmission degree of the pixel points is controlled, and finally, the white light is filtered out by the optical filter to form one of red, green and blue colors. By controlling a series of these pixel points, various colors can be mixed. Therefore, the color performance of the liquid crystal panel is mainly related to two factors, one is the filtering effectiveness of the filter, and the other is the white purity of the backlight source.
In terms of filters, precise color filtering is required, i.e., pure red (R), green (G), and blue (B) are filtered out. Advanced filters can filter out the color very accurately, but are expensive and degrade the performance of the LCD by reducing the transmittance, which results in significant attenuation and loss of brightness.
On the backlight side, it is desirable to provide a very "white" light source. It is known that white light is actually a mixture of red, blue and green, but the white led (wled) light source used at present cannot provide a very pure white light source, which is represented by the uneven ratio of red, green and blue. The current white light led (wled) has the defect of simply blue color, and generates extra yellow color, which ultimately limits the color representation of the liquid crystal panel.
The quantum dot is essentially a semiconductor crystal with the length, width and height reaching the nanometer level. Quantum dot materials have different electronic characteristics under different diameters and shapes, under the irradiation of an external light source, Quantum dots with small diameters can excite light with short wavelengths, and Quantum dots with larger diameters can excite light with longer wavelengths, which is a Quantum mechanical phenomenon called Quantum Confinement (Quantum Confinement), and the name of the Quantum dots is also called Quantum dots. The best quantum dots now have light conversion efficiencies in excess of 90% and the excited light has a narrow spectrum, i.e., indicating a very "accurate" color, and circumventing the problem of inadequate purity of the white light led (wled) sources currently encountered, which is difficult to solve. Based on the shortcomings of conventional Liquid Crystal Displays (LCDs), the unique characteristics of quantum dot materials are exploited, thus creating an now popular quantum dot liquid crystal panel.
The structure of the present quantum dot liquid crystal panel in the prior art is shown in fig. 8, which is a schematic structure diagram of the quantum dot liquid crystal panel in the prior art, and the present quantum dot liquid crystal panel includes: the liquid crystal box is formed by sealing liquid crystal molecules 107 by an upper glass substrate 101 and a lower glass substrate 105, wherein the upper glass substrate 101 is respectively provided with a quantum dot color filter layer 106 and an upper polarizing plate 108 towards the interior of the box body, the quantum dot color filter layer 106 and the upper polarizing plate 108 are sealed and adhered by a sealant, and a red quantum dot material 102, a green quantum dot material 103 and a diffusion particle transparent material 104 are arranged on the surface of the quantum dot color filter layer 106 in a separated manner; the surface of the lower glass substrate 105 facing the outside of the box body is provided with a lower polarizing plate 109, and the backlight module 110 arranged at the outer side of the lower glass substrate 105 of the liquid crystal panel emits blue light, and emits red light, green light and blue light after the blue light is emitted to the quantum dot color filter layer 106 through liquid crystal molecules in the box body of the liquid crystal panel so as to display a color image. With such a structure, the lower polarizer 109 has poor high temperature and high humidity resistance, and thus edge warpage is likely to occur, which further causes problems of warpage of the liquid crystal display panel and light leakage in a dark state. In addition, the TFT (thin film transistor) element on the inner surface of the liquid crystal cell facing the lower glass substrate 105 in the liquid crystal display panel needs to use an amorphous silicon material to make a switch, when making, the amorphous silicon material is coated on the whole surface, except the amorphous silicon at the position where the TFT (thin film transistor) element is made, the rest amorphous silicon material is etched at last, and the area of the TFT (thin film transistor) element only occupies a very small part compared with the whole liquid crystal panel, so that the amorphous silicon material causes a very large waste.
The amorphous silicon material can be used for replacing the grid polarization function of the lower polarization plate 109, and the characteristic of amorphous silicon is utilized, so that the novel quantum dot liquid crystal panel is provided.
Fig. 1 shows a schematic structure diagram of a quantum dot liquid crystal panel according to the present invention, the quantum dot liquid crystal panel 200 includes a liquid crystal box formed by sealing liquid crystal molecules 207 with an upper glass substrate 201 and a lower glass substrate 205, wherein a quantum dot color filter layer 206 and an upper polarizer 208 are sequentially disposed on one surface of the upper glass substrate 201 facing the inside of the box, the quantum dot color filter layer 206 and the upper polarizer 208 are bonded by a sealant, and a red quantum dot material 202, a green quantum dot material 203 and a diffusion particle transparent material 204 are separately disposed on the surface of the quantum dot color filter layer 206; the surface of the lower glass substrate 205 facing the inside of the case is provided with a lower polarizing plate 209. In the liquid crystal panel 200, the backlight module 210 disposed outside the lower glass substrate 205 of the liquid crystal panel 200 emits blue light, and the blue light, after being emitted to the quantum dot color filter layer 206 through the liquid crystal molecules 207 in the case of the liquid crystal panel 200, emits red light, green light, and blue light to display a color image.
The upper polarizing plate 208 is manufactured in the liquid crystal panel case as an upper gate polarization function layer, i.e., a color filter layer gate polarization function layer, and is mainly made of aluminum or silver, and is mainly made of an aluminum material in consideration of cost. The lower polarizing plate 209 is formed by coating an amorphous silicon material on the surface of the lower glass substrate 205, the pixel electrode is formed by coating the amorphous silicon material on the surface of the lower glass substrate 205, the amorphous silicon material layer is formed into a lower gate polarizing function layer and a pixel electrode by exposure, etching and other processes, and the lower gate polarizing function layer is axially vertical to the absorption axis of the upper gate polarizing function layer of the color filter layer on the surface of the upper glass substrate 201. The lower grid polarization function layer can also be called an amorphous silicon grid polarization function layer, and the upper grid polarization function layer can also be called a color filter grid polarization function layer. In this embodiment, fig. 2 shows a schematic diagram of an absorption axial direction perpendicular principle structure of an upper gate polarization functional layer of a color filter layer on the surface of an upper glass substrate and a lower gate polarization functional layer on the surface of a lower glass substrate of a quantum dot liquid crystal panel according to the present invention, fig. 2 shows an axial side schematic diagram of an upper gate polarization functional layer 208 and a lower gate polarization functional layer 209, the two surfaces are respectively provided with absorption axes 2081 and 2091 and are perpendicular in the axial direction, and the reason that the absorption axes of the upper gate polarization functional layer 208 and the lower gate polarization functional layer 209 are perpendicular is that liquid crystal molecules must be matched with the upper and lower polarization functional layers to achieve the function of a light valve.
As described above, the lower gate polarization functional layer is formed by coating an amorphous silicon material on the surface of the lower glass substrate, and then the non-absorption axis region is removed by etching or molding, so that the lower gate polarization functional layer and the pixel electrode layer are simultaneously formed on the surface of the lower glass substrate, the surface of the lower gate polarization functional layer forms the absorption axis of the amorphous silicon material, and the morphological structure of the absorption axis is perpendicular to the absorption axis of the upper gate polarization functional layer in the axial direction, without limiting the angle. The structure of the absorption axis of the gate polarization layer on the lower gate polarization function layer 209 includes two preferable embodiments, the first is a mode in which the absorption axis is parallel to the signal line, and the second is a mode in which the absorption axis is perpendicular to the signal line. In the present embodiment, as shown in fig. 3, a schematic structural diagram (an absorption axis is parallel to a signal line) of a principle structure of a lower gate polarization functional layer on a lower glass substrate surface of a quantum dot liquid crystal panel according to a first aspect of the present invention, it should be noted that fig. 3 is a partial structural diagram of a plan view of the lower glass substrate surface, a TFT element, a pixel electrode layer 2092, and an absorption axis 2091 of a gate polarization layer coated on a lower glass substrate surface and on the same layer as the pixel electrode layer 2092 are disposed in a region surrounded by signal lines and scanning lines which are crossed in a horizontal and vertical direction, and the absorption axis 2091 is an absorption axis 2091 of the lower gate polarization functional layer shown in fig. 2. It can be seen that the absorption axis 2091 of the lower gate polarization functional layer shown in fig. 3 is parallel to the signal line. Second embodiment as shown in fig. 4, a schematic structural diagram (an absorption axis is perpendicular to a signal line) of a principle structure of a lower gate polarization functional layer on a surface of a lower glass substrate of a quantum dot liquid crystal panel according to the present invention, it should be noted that fig. 4 is a partial structural diagram of a plan view of the surface of the lower glass substrate, and an absorption axis 2091 of a gate polarization layer coated on the surface of the lower glass substrate and in the same layer as the pixel electrode layer 2092 is provided in a region surrounded by the signal line and the scanning line which are crossed in the horizontal and vertical directions, and the absorption axis 2091 is an absorption axis 2091 of the lower gate polarization functional layer shown in fig. 2. It can be seen that the absorption axis 2091 of the lower gate polarization function layer shown in fig. 3 is perpendicular to the signal line.
The area of the TFT (thin film transistor) element only occupies a tiny part compared with the area of the whole liquid crystal panel, the lower grid polarization function layer, namely the amorphous silicon grid polarization function layer, is manufactured by utilizing the residual amorphous silicon material coating for manufacturing the TFT (thin film transistor) element, and the residual amorphous silicon material coating for manufacturing the TFT (thin film transistor) element is fully utilized, so that the great waste caused by etching the amorphous silicon material coating after the TFT (thin film transistor) element is manufactured in the prior art is avoided, and the lower grid polarization function layer is also manufactured in the quantum dot liquid crystal panel box. Meanwhile, as the lower grid polarization function layer and the TFT (thin film transistor) element utilize the same amorphous silicon material layer, compared with the quantum dot liquid crystal panel shown in the prior art in figure 8, the quantum dot liquid crystal panel has the advantages that the lower grid polarization function layer is reduced, and the quantum dot liquid crystal panel is thinner in thickness and lighter in weight. Because the lower grid polarization function layer is manufactured in the liquid crystal panel box, the problems of liquid crystal panel warping, dark state light leakage and the like caused by poor high temperature and high humidity resistance are avoided.
The quantum dot liquid crystal panel of the invention mainly moves the lower grid polarization function layer into the liquid crystal panel box, and the manufacturing methods of the lower grid polarization function layer on the lower glass substrate of the liquid crystal panel mainly comprise two methods: exposure etching and nanoimprint techniques. The present invention provides a method for manufacturing a quantum dot liquid crystal panel, which is used to manufacture the quantum dot liquid crystal panel, and the manufacturing of the lower gate polarization function layer on the lower glass substrate of the quantum dot liquid crystal panel includes the following steps, please refer to fig. 5, which is a schematic diagram of the manufacturing (exposure etching) process of the lower gate polarization function layer on the surface of the lower glass substrate of the method for manufacturing a quantum dot liquid crystal panel of the present invention.
And coating an amorphous silicon material on the surface of the lower glass substrate.
And coating a photoresist material on the surface of the amorphous silicon material of the lower glass substrate to form the structure in step 1 shown in fig. 5, wherein the structure in step 1 is the cross-sectional structure of the lower glass substrate, the amorphous silicon material 209 is coated on the lower glass substrate 205, and the photoresist material 211 is coated on the amorphous silicon material 209.
And exposing the photoresist material coated on the surface of the amorphous silicon material to remove the non-absorption axis region of the photoresist material, thereby forming the structure in the step 2 shown in fig. 5.
The non-absorption axis region of the amorphous silicon material is removed by etching the amorphous silicon material coating in the non-absorption axis region of the photoresist material, so as to form the structure in step 3 shown in fig. 5, and the absorption axis region of the photoresist material 211 and the amorphous silicon material 209 is left on the lower glass substrate 205. In the step of etching the amorphous silicon material coating in the non-absorption axis region of the photoresist material to remove the amorphous silicon material, it is also necessary to simultaneously leave the pixel electrode region not to be etched, the pixel electrode region is not shown in fig. 5, and the specific structure may refer to the structures in fig. 3 and 4.
Finally, the photoresist material on the surface of the absorption axis is stripped to form the lower gate polarization function layer on the lower glass substrate, and the structure in step 4 shown in fig. 5 is formed, and the absorption axis 2091 of the amorphous silicon material 209 is formed on the lower glass substrate 205.
The structure of the lower gate polarization functional layer formed by the exposure and etching method and the working principle thereof can refer to the embodiments of the quantum dot liquid crystal panel, which are not described herein again.
The present invention further provides another manufacturing method of a quantum dot liquid crystal panel, which is used for manufacturing the quantum dot liquid crystal panel, and the manufacturing of the lower gate polarization functional layer on the lower glass substrate of the quantum dot liquid crystal panel includes the following steps, please refer to fig. 6, which is a schematic diagram of a manufacturing (nanoimprint) process of the lower gate polarization functional layer on the surface of the lower glass substrate according to the manufacturing method of the quantum dot liquid crystal panel of the present invention.
Coating an amorphous silicon material on the surface of the lower glass substrate; the step of coating the amorphous silicon material on the surface of the lower glass substrate is to coat the amorphous silicon material on one surface of the lower glass substrate printed with the pixel electrode layer.
Pressing the mold on the surface of the amorphous silicon material of the lower glass substrate to form a convex shape of the absorption axis of the amorphous silicon material; referring to steps 1 and 2 shown in fig. 6, step 1 is to coat the amorphous silicon material 209 on the surface of the lower glass substrate 205, and the mold 30 capable of forming the concave-convex structure is ready to press the amorphous silicon material 209, step 2 is to press the mold 30 on the surface of the amorphous silicon material 209 to form a convex shape of the absorption axis of the amorphous silicon material, and after the mold 30 presses the amorphous silicon material, the amorphous silicon material is remained in the non-absorption axis region of the concave surface of the amorphous silicon material 209.
And removing the mold, and etching the non-absorption axis region of the amorphous silicon material to form the lower grid polarization function layer of the lower glass substrate. Referring to step 3 shown in fig. 6, the non-absorption axis region of the amorphous silicon material with the structure formed in step 2 is etched to form an absorption axis 2091 of the amorphous silicon material on the lower glass substrate 205. In the step of etching the non-absorption axis region of the amorphous silicon material after removing the mold, the pixel electrode region is also required to be kept without being etched, which is not shown in fig. 6, and the specific structure can refer to the structures in fig. 3 and 4.
The structure of the lower gate polarization functional layer formed by the nanoimprint lithography method and the working principle thereof can refer to the quantum dot liquid crystal panel embodiment, and details are not repeated here.
The actual structural diagram of the lower gate polarization functional layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel formed by the method can be shown as the actual structural microscopic diagram of the lower gate polarization functional layer on the surface of the lower glass substrate of the quantum dot liquid crystal panel of fig. 7. The absorption axis structure of the lower gate polarization functional layer under the nanoscale microstructure can be seen in fig. 7.
It should be understood that the above-mentioned embodiments are merely preferred examples of the present invention, and not restrictive, but rather, all the changes, substitutions, alterations and modifications that come within the spirit and scope of the invention as described above may be made by those skilled in the art, and all the changes, substitutions, alterations and modifications that fall within the scope of the appended claims should be construed as being included in the present invention.
Claims (8)
1. A quantum dot liquid crystal panel is characterized by comprising a liquid crystal box formed by sealing liquid crystal molecules by an upper glass substrate and a lower glass substrate, wherein a quantum dot color filter layer and an upper polarizing plate are sequentially arranged on one surface of the upper glass substrate facing the inside of a box body, the quantum dot color filter layer and the upper polarizing plate are sealed and adhered by a sealant, and a red quantum dot material, a green quantum dot material and a diffusion particle transparent material are arranged on the surface of the quantum dot color filter layer in a separated manner; the surface of the lower glass substrate facing the interior of the box body is provided with a lower polarizing plate and a pixel electrode on the same layer; the lower polarizing plate is a lower grid polarizing function layer coated on the surface of the lower glass substrate by adopting an amorphous silicon material, and the pixel electrode is also coated on the surface of the lower glass substrate by adopting the amorphous silicon material.
2. The quantum dot liquid crystal panel according to claim 1, wherein the lower gate polarization functional layer is perpendicular to an absorption axis of the upper gate polarization functional layer of the color filter layer on the surface of the upper glass substrate.
3. The quantum dot liquid crystal panel according to claim 2, wherein the gate polarization layer absorption axis of the lower gate polarization functional layer is perpendicular to the scanning line on the lower glass substrate and perpendicular to the absorption axis of the upper gate polarization functional layer.
4. The quantum dot liquid crystal panel according to claim 2, wherein the gate polarization layer absorption axis of the lower gate polarization functional layer is arranged parallel to the scanning line on the lower glass substrate and perpendicular to the absorption axis of the upper gate polarization functional layer.
5. A method for manufacturing a quantum dot liquid crystal panel, for manufacturing the quantum dot liquid crystal panel according to any one of claims 1 to 4, wherein the manufacturing of the lower gate polarization function layer on the lower glass substrate of the quantum dot liquid crystal panel comprises the steps of:
coating an amorphous silicon material on the surface of the lower glass substrate;
coating a photoresist material on the surface of the amorphous silicon material of the lower glass substrate;
exposing the photoresist material coated on the surface of the amorphous silicon material to remove a non-absorption axis region of the photoresist material;
etching the amorphous silicon material coating in the non-absorption axis region of the photoresist material to remove the non-absorption axis region of the amorphous silicon material;
and stripping the photoresist material on the surface of the absorption shaft to form a lower grid polarization function layer on the lower glass substrate.
6. The method as claimed in claim 5, wherein the step of etching the amorphous silicon material coating on the non-absorption axis region of the photoresist material to remove the amorphous silicon material also requires that the pixel electrode region is not etched.
7. A method for manufacturing a quantum dot liquid crystal panel, which is used for manufacturing the quantum dot liquid crystal panel as claimed in any one of claims 1 to 4, wherein the manufacturing of the lower gate polarization function layer on the lower glass substrate of the quantum dot liquid crystal panel comprises the following steps:
coating an amorphous silicon material on the surface of the lower glass substrate;
pressing the mold on the surface of the amorphous silicon material of the lower glass substrate to form a convex shape of the absorption axis of the amorphous silicon material;
and removing the mold, and etching the non-absorption axis region of the amorphous silicon material to form the lower grid polarization function layer of the lower glass substrate.
8. The method of claim 7, wherein the step of etching the non-absorption axis region of the amorphous silicon material after removing the mold is further performed while leaving the pixel electrode region unetched.
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| CN201810648166.2A CN110632783B (en) | 2018-06-22 | 2018-06-22 | Quantum dot liquid crystal panel and manufacturing method thereof |
| PCT/CN2019/086486 WO2019242425A1 (en) | 2018-06-22 | 2019-05-11 | Quantum dot liquid crystal panel and manufacturing method therefor |
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| KR102607407B1 (en) * | 2016-06-03 | 2023-11-28 | 삼성디스플레이 주식회사 | Display device and method for fabricating the same |
| KR20180030289A (en) * | 2016-09-12 | 2018-03-22 | 삼성디스플레이 주식회사 | Display device having polarizer unit |
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| CN104617114A (en) * | 2015-02-15 | 2015-05-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method of array substrate and display device |
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| WO2019242425A1 (en) | 2019-12-26 |
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