CN104280808A - Grid polarizing element, photo-orientation device, polarization method and method for manufacturing grid polarizing element - Google Patents
Grid polarizing element, photo-orientation device, polarization method and method for manufacturing grid polarizing element Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3058—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3075—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state for use in the UV
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
- G02F1/133548—Wire-grid polarisers
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Abstract
The invention provides a grid polarizing element, a photo-orientation device, a polarization method and a method for manufacturing the grid polarizing element. The grid polarizing element is capable of irradiating the polarized light within a short wavelength region and an ultraviolet (UV) region to a larger region to some extent, and is excellent in extinction ratio, transmission rate and the like. A grid (2) on a transparent substrate 1 is made of amorphous silicon, wherein a refractive index real part n is larger than an attenuation coefficient k. The distance between every two adjacent line-shaped portions (21) of a grid (2) on one side is set to be t, and the distance between every two adjacent line-shaped portions (21) of a grid (2) on the other side is set to be T. Periodically and substantially, the segments of the grid are set in such a manner that t is smaller than T. The mean value of the widths of all the line-shaped portions (21) of the grid (2) is set to be w, and the relation that t/T is larger than the sum of 0.0159w and 0.3735 can be met.
Description
Technical field
The invention of the application relates to the polarization technology using grid polarizer.
Background technology
Obtain the polarizer of polarized light, there will be a known the various optical element such as polarizing filter, polarizing coating, the carry-on articles that such as polarization sunglasses is such, also extensively adopts in the display devices such as liquid crystal display.Polarizer is divided into several according to the mode of taking out polarized light, and one of them is wire grid polarization element.
Wire grid polarization element have employed the structure arranging the fine striated grid be made up of metal (electric conductor) on the transparent substrate.Want the wavelength of the light of polarization by making the interval of grid be less than, thus play a role as polarizer.Among rectilinearly polarized light, length direction at grid is had to the polarized light of electric field component, with flat metal equivalence, so produce reflection, on the other hand, for the polarized light in the direction vertical with length direction with electric field component, with the situation equivalence only having transparency carrier, so penetrate transparency carrier and penetrate.Therefore, the rectilinearly polarized light in the direction vertical with the length direction of grid is only penetrated from polarizer.Making the length direction of grid towards desired orientation by controlling the posture of polarizer, the polarized light of axle (direction of electric field component) towards desired orientation of polarized light can be obtained.
Below, for convenience of explanation, the rectilinearly polarized light length direction at grid with electric field component is called s polarized light, and the rectilinearly polarized light in the direction vertical with length direction with electric field component is called p polarized light.Usually, electric field and the plane of incidence (vertical with reflecting surface and comprise the face of incident ray and reflection ray) vertical ripple is called s ripple, parallel ripple is called p ripple, distinguishes premised on the length direction of grid is parallel with the plane of incidence.
Represent that the basic index of the performance of this polarizer is Extinction ratio and transmitance TR.Intensity (Ip) among the intensity that Extinction ratio has been through the polarized light of polarizer, p polarized light is relative to the ratio (Ip/Is) of the intensity (Is) of s polarized light.In addition, the ratio (TR=Ip/ (Is+Ip)) of whole energy of the energy of p polarized light that normally penetrates of transmitance TR and the s polarized light of incidence and p polarized light.In desirable polarizer, Extinction ratio=∞, transmitance TR=50%.
Patent documentation 1: Japanese Unexamined Patent Publication 2011-8172 publication
The summary of invention
The problem that invention will solve
For the utilization of light, be representative with display technology, utilize the situation of the light of visible range a lot, but in the fields such as optical communication, utilize the light of infrared region.On the other hand, light is also a lot of as the situation of Energy harvesting, mostly utilize the light of ultraviolet region in this case.Such as, the exposure (photosensitive process) of the resist in photoengraving, the solidification process etc. of ultraviolet curing resin can be enumerated.Therefore, in the utilization of polarized light, when using polarized light as Energy harvesting, need the polarized light of the wavelength of ultraviolet region.
An example is more specifically shown, in the manufacturing process of liquid crystal display, adopts the technology being called as light orientation in recent years.This technology is penetrated by illumination and obtains the technology of alignment films that needs on a liquid crystal display.When irradiating the polarized light of ultraviolet region to the resinous film that polyimide is such, the molecule in film arranges on the direction of polarized light, obtains alignment films.Be called as grind (rubbing) mechanical orientation process compared with, high performance alignment films can be obtained, so be widely adopted as the manufacturing process of the liquid crystal display of high image quality.
Like this, in certain purposes, needing the polarized light obtaining shorter wavelength region may, needing the polarizer of the polarized light for obtaining short wavelength region.But, for the polarizer of light polarization making this short wavelength region, not yet further investigate, almost do not occur yet can be practical product.Short wavelength region is the wavelength region may from visible short wavelength side (such as below 450nm) to ultraviolet region.
As the polarizing coating for visible ray, often make the polarizing coating that the absorption axle of resin bed is consistent.But as ultraviolet polarizing coating, resin is deterioration between short-term by ultraviolet affects, so cannot use.
When making the light polarization of ultraviolet region, the prism polarizers that make use of kalzit can be used.But prism polarizers is applicable to the purposes at narrow area illumination polarized light as laser, be not suitable for the purposes at wide area illumination polarized light to a certain degree as light orientation.
Above-mentioned wiregrating (wire grid) polarizer is can to the polarizer of wide area illumination polarized light to a certain degree.By multiple wire grid polarization element arrangements, polarized light can be irradiated to broader area.
In wiregrating polarizer, the materials'use tungsten, copper, aluminium etc. of striated grid.When ultraviolet is with wire grid polarization element, be mostly used in the aluminium that ultraviolet region has high reflectance.But although wire grid polarization element shows High Extinction Ratio to a certain degree and transmitance for the light of the visible range longer than about 500nm, but shorten along with wavelength, extinction ratio and transmitance sharply decline near 400nm.Although its reason is not untied completely, be speculated as and result from the optical property of aluminium.
Like this, in the purposes of the such optical technology of light orientation, wish a kind of can by the polarizer of the practicality in the wide region to a certain degree of the polarizing light irradiation from the long region of visible short to ultraviolet region, but the polarizer of the such key property excellence of extinction ratio, transmitance not yet develops.In order to improve the quality of orientation process, needing only to irradiate towards the polarized light (raising of extinction ratio) of desired orientation, needing the polarizer of more high permeability in order to improve productivity (treatment effeciency).
Summary of the invention
The present invention considers above-mentioned problem and makes, its meaning is, a kind of polarizer is provided, can at the polarized light of wide area illumination to a certain degree from the long region of visible short to ultraviolet region, in the key property that extinction ratio, transmitance are such, there is excellent characteristic.
In order to solve above-mentioned problem, the invention described in technical scheme 1 of the application, a kind of grid polarizer, be made up of the grid of transparency carrier and setting striated on the transparent substrate, make the light polarization of the wavelength that refractive index real part n specific damping coefficient k is large in the material of grid, grid is formed by the silicon of amorphous, the distance forming each wire portion of grid and the adjacent wire portion of side is set to t, when the distance in the adjacent wire portion with opposite side is set to T, there is to grid cycle the part of t < T in fact.
In addition, in order to solve above-mentioned problem, the invention described in technical scheme 2, in the formation of described technical scheme 1, the wavelength that described refractive index real part n specific damping coefficient k is large is more than 330nm.
In addition, in order to solve above-mentioned problem, invention described in technical scheme 3, in the formation of described technical scheme 1 or 2, when the mean value of the width in described each wire portion is set to w, in the part of described t < T, be in the relation of t/T > 0.0159w+0.3735.
In addition, in order to solve above-mentioned problem, invention described in technical scheme 4, in the formation of described technical scheme 1 or 2, when observing from the direction on the surface along described transparency carrier and perpendicular to the direction of the length direction in described wire portion, described grid does not have position as following, the position of this position partial continuous that to be two described wire portions arrange from T across width.
In addition, in order to solve above-mentioned problem, the invention described in technical scheme 5, a kind of light aligning device, possesses grid polarizer described any one of light source and technical scheme 1 ~ 4, between the irradiation area that grid polarizer is configured in the film material being configured with light orientation and light source.
In addition, in order to solve above-mentioned problem, invention described in technical scheme 6, a kind of polarizing method, use the grid polarizer be made up of with the grid of the striated arranged on the transparent substrate transparency carrier, make the light polarization of the wavelength that refractive index real part n specific damping coefficient k is large in the material of grid, grid is formed by the silicon of amorphous, the distance forming each wire portion of grid and the adjacent wire portion of side is set to t, when the distance in the adjacent wire portion with opposite side is set to T, there is to grid cycle the part of t < T in fact.
In addition, in order to solve above-mentioned problem, the invention described in technical scheme 7, in the formation of described technical scheme 6, the wavelength that described refractive index real part n specific damping coefficient k is large is more than 330nm.
In addition, in order to solve above-mentioned problem, invention described in technical scheme 8, in the formation of described technical scheme 6 or 7, when the mean value of the width in described each wire portion is set to w, in the part of described t < T, be in the relation of t/T > 0.0159w+0.3735.
In addition, in order to solve above-mentioned problem, invention described in technical scheme 9, a kind of grid polarizing element manufacturing method manufacturing grid polarizer, this grid polarizer is made up of the grid of transparency carrier with the striated be arranged on transparency carrier, if the distance forming the slit in each wire portion of grid and the adjacent wire portion of side is t, if when being T with the distance of the slit in the adjacent wire portion of opposite side, there is to grid cycle the part of t < T in fact, this grid polarizing element manufacturing method has following operation: intermediate film production process, make intermediate film on the transparent substrate, photo-mask process, becomes figure to become the striated be made up of multiple middle wire portion by intermediate film, grid thin film fabrication process, makes grid film in the side of each groove of the intermediate film being become striated by photo-mask process, and intermediate film removal step, intermediate film is removed and forms described each wire portion by grid film, photo-mask process is following operation: form each middle wire portion in the position of the slit being formed with described distance t according to the width L1 suitable with this distance t, is set to by the separation spacing in each middle wire portion and is added with the width in described wire portion by described distance T and the distance L2 obtained.
The effect of invention:
As described below, according to the invention of each technical scheme of the application, a kind of grid elements, make the light polarization of the wavelength that refractive index real part n specific damping coefficient k is large in the material of grid, grid is formed by the silicon of amorphous, the distance forming each wire portion of grid and the adjacent wire portion of side is set to t, when the distance in the adjacent wire portion with opposite side is set to T, there is to grid cycle the part of t < T in fact, so transmitance need not be reduced significantly, just extinction ratio can be improved.Therefore, it is possible to irradiate the better polarized light of quality.
In addition, according to the invention described in technical scheme 4, in addition to the above-described effects, not there is the position of the partial continuous that wire portion arranges with wide separation spacing T, so extinction ratio can not reduce.
In addition, according to the invention described in technical scheme 5, in addition to the above-described effects, light orientation can be carried out, so the optical alignment film of high-quality can be obtained with high productivity with the polarized light of high energy radiation quality better.
In addition, according to the invention described in technical scheme 9, in photo-mask process, each middle wire portion is formed according to the width L1 suitable with this distance t in the position of the slit being formed with described distance t, the separation spacing in each middle wire portion is set to and described distance T is added with the width in described wire portion and the distance L2 obtained, so the excellent grid polarizer of key property easily can be manufactured.
Accompanying drawing explanation
Fig. 1 is the perspective sketch of the grid polarizer of the embodiment schematically showing the present application.
Fig. 2 is the skeleton diagram of the optical constant representing the amorphous silicon made in the experiment carried out of invention people.
Fig. 3 is the figure to the result that the electromagnetic wave propagation situation in the grid polarizer of embodiment is simulated.
Fig. 4 be in the amorphous silicon of the optical constant showing Fig. 2 using 254nm as use wavelength, to transmitance and extinction ratio relative to the inclined figure how to change the result simulated than t/T.
Fig. 5 is the figure of the optical constant representing aluminium.
Fig. 6 is the aluminium of optical constant using showing Fig. 5 when adopting as the material of grid 2, to make partially when changing than t/T transmitance and extinction ratio how to change the figure of the result simulated.
Fig. 7 is the perspective sketch of the reason that in the grid polarizer being shown schematically in embodiment, extinction ratio improves.
Fig. 8 is the figure of the result represented the simulation that the ripple of x direction magnetic field components Hx confirms.
Fig. 9 schematically shows cross section, the front skeleton diagram newly being produced the situation of electric field Ey by the ripple (rotation) of x direction magnetic field components Hx.
Figure 10 is the figure to the result that the optimum configuration of the grid polarizer of the grid 2 employing amorphous silicon is discussed.
Figure 11 is the skeleton diagram of the manufacture method of the grid polarizer representing embodiment.
Figure 12 is the skeleton diagram of another manufacture method of the grid polarizer representing embodiment.
Figure 13 is the skeleton diagram of the shape difference of the grid polarizer representing the grid polarizer that manufactured by the manufacture method of Figure 11 and manufactured by the manufacture method of Figure 12.
Figure 14 represents the example of the grid polarizer of embodiment, is the cross section skeleton diagram of the light aligning device having carried grid polarizer.
The explanation of symbol:
1 transparency carrier; 2 grids; 21 wire portions; 3 intermediate film; 4 grid films; 5 light sources; 6 catoptrons; 7 grid polarizers; 10 workpiece
Embodiment
Following explanation the specific embodiment of the present invention (embodiment).
Fig. 1 is the schematic diagram of the grid polarizer schematically showing embodiments of the present invention.Grid polarizer shown in Fig. 1 is formed primarily of transparency carrier 1 and the grid 2 be arranged on transparency carrier 1.The polarizer of embodiment has the structure similar with wire grid polarization element, and as described later, grid 2 is not electric conductor (metal wire), so referred to as grid polarizer.
" transparent " of transparency carrier 1 refers to relative to using wavelength (using polarizer to carry out the wavelength of the light of polarization) to have enough permeabilities.In this embodiment, be envisioned for using the light of ultraviolet region as use wavelength, so as the material of transparency carrier 1, adopt quartz glass (such as synthetic quartz).
As shown in Figure 1, grid 2 is the striated devices be made up of the multiple wire portions 21 extended abreast.Each wire portion 21 is formed by the silicon of amorphous.Further, in grid 2, each wire portion 21 exists partially.That is, each wire portion 21 is set to t with the distance in the adjacent wire portion 21 of side, when the distance in the adjacent wire portion 21 with opposite side is set to T, periodically there is the part of t < T in fact.Below for ease of illustrating, t/T is called partially than.
In the above description, " in fact the part of t < T " refers to, the separating distance t of side and the separating distance T of opposite side is different in essence." in fact " refer to, do not comprise the difference of the distance caused due to the deviation in manufacture, but in order to play aftermentioned effect, be set to t ≠ T wittingly.
In addition, " periodically " is the nonrandom meaning.Random when t ≠ T is and produces due to the deviation in manufacture, but, be set to t ≠ T wittingly to play effect described later, so become periodically.In addition, the periodicity in this situation refers to, along the surface of transparency carrier 1, when watching from the direction vertical with the length direction of grid 2, the part periodic ground of t ≠ T exists.
The formation of the grid polarizer of this embodiment is the present inventor for being the achievement which kind of form conducts in-depth research in the formation obtaining the grid polarizer of higher extinction ratio and transmitance from the region (being referred to as short wavelength region below) of the long region of visible short to ultraviolet region.
The result that inventor conducts in-depth research the grid polarizer, the especially structure and material of grid 2 that obtain extinction ratio and transmitance in short wavelength region, the materials and structures confirming to select according to the thinking different from wire grid polarization element in the past grid 2 is effective.
Wire grid polarization element is in the past also called reflection-type grid polarizer, and grid uses the metal of high reflectance, makes the rectilinearly polarized light reflection at the length direction of grid with electric field component, thus not through transparency carrier 1.In the grid polarizer of this thinking, as mentioned above, in shorter wavelength region may, there is the limit in the raising of the key property that extinction ratio, transmitance are such.
Present inventor contemplates idea that is different from the thinking of this grid polarizer in the past, that also can be described as absorption-type grid polarizer.Although be absorption-type, not utilize the light absorption undertaken by macromolecule common in the polarizing coating etc. of visible ray, but utilize the decay of the light caused by electromagnetic induction phenomenon.
As everyone knows, in the propagation of the light in the conductive medium that metal is such, refractive index is as complex index of refraction process.If be set to n ' to complex index of refraction and common refractive index be carried out distinguishing, then the formula 1 of complex index of refraction n ' as following represents.
[mathematical expression 1]
N '=n-ik (formula 1)
In formula 1, n is the real part (hereinafter referred to as refractive index real part) of complex index of refraction, and k is so-called attenuation coefficient.When refractive index real part n is greater than attenuation coefficient k and adopts unequal grid structure, the grid polarizer of the optical attenuation that utilization that inventor expects is caused by electromagnetic induction phenomenon can be obtained.
First, illustrate in the grid polarizer of embodiment as the complex index of refraction of amorphous silicon of grid material use and the complex index of refraction of the aluminium as comparative example.Fig. 2 is the schematic diagram of the optical constant (refractive index real part n, attenuation coefficient k) representing the amorphous silicon film made in the experiment carried out inventor.
The amorphous silicon film of the optical constant shown in Fig. 2 is made on the transparency carrier 1 of quartz by sputtering method, thus film-forming temperature be 25 DEG C, thickness is 100nm degree.As shown in Figure 2, amorphous silicon is with the wavelength of 330nm degree for boundary, and the size of n and k is reversed.That is, in the wavelength region may shorter than 330nm degree, refractive index real part n specific damping coefficient k is little, but in the wavelength region may of more than 330nm, n is larger than k.Ultraviolet region till the pass of n > k ties up to 400nm is also constant, in addition, although the diagram of omission, longer than 400nm and more than 450nm visibility region too.
The absorption-type grid polarizer that invention people expect effectively plays function under the relation of n > k.That is, in the amorphous silicon of optical constant shown in Figure 2, effectively function is played when the long wavelength side longer than 330nm uses.Arbitrary wavelength can be selected in the scope of more than 330nm, illustrate 365nm as the situation using wavelength as an example.When 365nm, amorphous silicon n=4.03, k=3.04.
How invention people, when the amorphous silicon that will have such n and k is as the material of grid 2, changes for transmitance and extinction ratio and simulate.Its result is below described.
Fig. 3 is the figure to the result that the electromagnetic wave propagation situation in the grid polarizer of embodiment is simulated.In figure 3, when contemplating by grid polarizer shown in the silicon thin film pie graph 1 shown in Fig. 2, for make partially when change more various than t/T transmitance and extinction ratio how to change and carried out simulation and resolve.(1) in Fig. 3 represents transmitance, and (2) represent extinction ratio.In the simulation of Fig. 3, employ RCWA (Rigorous Coupled-Wave Analysis) method, the software (http://physics.nist.g ov/Divisions/Div844/facilities/scatmech/html/grating.htm) using US National standard technique research institute (NIST) to issue, calculates the transmitance in each t/T and extinction ratio.
As shown in Figure 2, refractive index real part n and attenuation coefficient k becomes different values according to wavelength, but as described above, if wavelength is 365nm, n=4.03, k=3.04.Dielectric and magnetic susceptibility precalculate according to this n and k and substitute into.In addition, the width W of grid 2 between 10 ~ 30nm with 5nm interval variation, but be highly 170nm, be certain.In addition, make partially changing than t/T at each raster width W of 10 ~ 30nm.Specifically, partially when than t/T=1, take t=T=90nm as starting point, reduce t in the mode meeting t+T=180nm all the time and increase T, make t/T change thus.
In Fig. 3 (1), the transmitance of (not partially situation) during t/T=1 is set to 1, as relative to this relative value, shows transmitance when making t/T be less than 1.The extinction ratio of Fig. 3 (2) too, illustrates with relative value when value during t/T=1 being set to 1.
As shown in Fig. 3 (1), when making t/T be less than 1, transmitance declines compared with the situation of t/T=1, but at the raster width W of 10 ~ 30nm, as long as in the scope of t/T=1 ~ 0.3 degree, the size of transmitance would not decline.
On the other hand, as shown in Fig. 3 (2), being under the condition of below 25nm at raster width w, having confirmed by making t/T be less than 1 and extinction ratio significantly improves compared with the situation of t/T=1.
Next, as comparative example, illustrate that wavelength is less than the situation of 330nm.Such as, in fig. 2, n < k when wavelength is 254nm.When forming the grid polarizer formed by the grid 2 of amorphous silicon under the condition of such n and k, similarly how transmitance and extinction ratio are changed and simulate.Its result is shown in Figure 4.Fig. 4 be in the amorphous silicon of the optical constant shown in Fig. 2 using 254nm as use wavelength, to transmitance and extinction ratio relative to the inclined figure how to change the result simulated than t/T.Equally, Fig. 4 has illustrated transmitance in (1), and Fig. 4 has illustrated extinction ratio in (2).The width of grid 2 similarly between 10 ~ 30nm with 5nm interval variation, being highly 170nm, is certain.
As shown in Fig. 4 (1), under the condition of wavelength 254nm (condition of n < k), confirmed transmitance and improved a little at the raster width W of 10 ~ 20nm, but transmitance declines a little at other raster widths W.In addition, when any raster width W, if make t/T be less than 1, extinction ratio sharply reduces.The decline of extinction ratio partly confirm transmitance raising, partially comparatively remarkable in the region less than t/T.That is, under the condition of n < k, even if make grid 2 partially exist, extinction ratio, not only without any raising, sharply reduces on the contrary.Like this, when using the optical constant of grid 2 in wavelength to have the relation of n < k, even if grid polarizer makes grid 2 partially exist, extinction ratio is not only without any improve, sharply reduce on the contrary, on the other hand, when there is the relation of n > k, improve and partially can improve extinction ratio significantly in change, transmitance also can not decline significantly in this case.
In addition, as another comparative example, the grid polarizer be made up of the grid of aluminum in the past used is described.Fig. 5 is the figure of the optical constant representing aluminium, based on Aleksandar D.Raki ▲ c ▼ .Algorithm for the determination of intrinsic optical constants of metal films:application to aluminum, disclosed data of Appl.Opt.34,4755-4767 (1995) and making.As shown in Figure 5, in the case of aluminium, in same short wavelength region, specific damping coefficient k is little all the time for refractive index real part n.
Fig. 6 is when the aluminium of the optical constant shown in Fig. 5 adopts as the material of grid 2, to make partially when changing than t/T transmitance and extinction ratio how to change the figure of the result simulated.Similarly, Fig. 6 has illustrated transmitance in (1), and Fig. 6 has illustrated extinction ratio in (2).
Wavelength is used to be envisioned for 254nm, as the parameter obtained at that wavelength, if refractive index real part n=0.183, attenuation coefficient k=2.93.The width making grid 2 similarly between 10 ~ 30nm with 5nm interval variation, being highly 170nm, is certain.
As shown in Fig. 6 (1), be made up of aluminium grid 2 when, confirmed transmitance and improved a little at the raster width W of 10 ~ 20nm.Partially when less than t/T transmitance higher, be 40% degree to the maximum.But as shown in Fig. 6 (2), when arbitrary raster width W, if make t/T be less than 1, extinction ratio sharply reduces.The decline of extinction ratio partly confirm transmitance raising, partially comparatively remarkable in the region less than t/T.That is, when the material of grid 2 being set to aluminium, if make grid 2 partially exist, most important extinction ratio also can reduce, and the raising of transmitance and the raising of extinction ratio cannot get both.
Like this, in the material of grid 2, the condition of n > k is set up, can obtain changing by improving the inclined of grid 2 effect improving extinction ratio.Have n > k grid 2 embodiment grid polarizer in, about the reason of raising that can obtain extinction ratio, surmisable item is below described.Fig. 7 is the perspective sketch of the reason that in the grid polarizer being shown schematically in embodiment, extinction ratio improves.
As described above, extinction ratio is the ratio of intensity (Ip) relative to the intensity (Is) of s polarized light of p polarized light, in order to improve extinction ratio, makes s polarized light through polarizer, cannot mainly consider the movement of s polarized light at this.
In the figure 7, for simplicity, if light is propagated from the top down, and set this direction as z direction on paper.In addition, if the bearing of trend of grid 2 is y direction, therefore, s polarized light (illustrating with Ls in Fig. 5) has electric field component Ey.The magnetic field components (not shown) of this s polarized light becomes x direction (Hx).
When such s polarizing light irradiation is to the grid 2 of grid polarizer, the electric field Ey of s polarized light is weakened by the dielectric of grid 2.On the other hand, the medium between grid 2 is in most cases air, but in general dielectric is less than grid 2, so can not die down as in grid 2 at electric field Ey in the space between grid 2.
As a result, in x-y plane, produce the rotation composition of electric field Ey.Further, according to the following Max Wei Er equation (formula 2) corresponding with faraday electromagnetic induction, according to the power of the rotation of this x-y plane, two mutual reverse magnetic field Hz are induced in a z-direction.
[several 2]
Formula (2)
That is, with the highest place of the electric field Ey of the central authorities between grid 2 for boundary, in the direction of propagation front of side Hz towards light, at opposite side Hz towards rear.At this, although omit in the figure 7, the magnetic field Hx in x direction exists with Ey coordination phase and towards the minus side of x-axis.The z direction composition Hz that this x direction magnetic field components Hx is generated pulls and is deformed into corrugated.
Fig. 8 is the figure of the result represented the simulation that the ripple of this x direction magnetic field components Hx confirms.In fig. 8, similarly the material of grid 2 is set to amorphous silicon, has carried out simulating (n > k) with the optical constant of wavelength 365nm (n=4.03, k=3.04).In fig. 8, the width in each wire portion 21 of grid 2 is 15nm, and the 90nm that is spaced apart in each wire portion 21 is certain, and the height in each wire portion 21 is 170nm.Simulation is carried out based on FDTD (Finite-Difference Time-Domain) method, and the software of use is the MATLAB of Mathworks company (Massachusetts, United States) (registered trademark of the said firm).
In fig. 8, the thick black part of upside represents the negative composition of electric field Ez, and the light gray part in stage casing represents the positive composition of electric field Ez.Magnetic field illustrates with vector (arrow).
As shown in Figure 8, the s polarized light be irradiated to before grid 2 does not have Hz composition, so only have Hx composition, but due to the generation of the aforementioned Hz composition that is irradiated to grid 2, can confirm magnetic field and occur ripple in x-z face.As shown in Figure 8, the ripple in magnetic field is in the situation that can be called clockwise magnetic field rotating.In addition, in fig. 8, y direction is the direction of propagation of light, and z direction is the length direction of grid 2, different from Fig. 7.
After producing the ripple (rotation) of such magnetic field components Hx, according to the Max Wei Er equation (formula 3) corresponding with ampere-Max Wei Er rule, also on the y direction of Fig. 7, produce electric field.
[several 3]
This situation schematically shows at Fig. 9.Fig. 9 schematically shows cross section, the front skeleton diagram newly producing the situation of electric field Ey due to the ripple (rotation) of x direction magnetic field components Hx.
As shown in Figure 9, due to the ripple (rotation) of the magnetic field components Hx in x-z face, produce in grid 2 towards the electric field Ey of the paper nearby side of Fig. 9, produce between grid 2 and grid 2 towards the electric field Ey of paper inboard.In this case, because the original electric field Ey of the s polarized light of incidence is towards paper nearby side, so the electric field between grid 2 is offset due to the rotation in above-mentioned magnetic field, fluctuation disjunction is act as.As a result, electric field Ey is present in grid 2 partly, and by the absorption corresponding to the material of grid 2, the energy of s polarized light is propagated while disappear in grid 2.
On the other hand, about p polarized light, although electric field component is towards x direction (Ex), when observing in y direction, dielectric distribution is uniform, so do not produce in fact the rotation composition of foregoing electric field.Therefore, for p polarized light, do not produce the local existenceization in the grid 2 of the such electric field of s polarized light, the decay in grid 2.Namely, for s polarized light, by producing the ripple (rotation) of magnetic field components Hx, electric field Ey is existed in grid 2 partly, and by the absorption in grid 2, s polarized light is optionally decayed, this is the operating principle of the grid polarizer of present embodiment.By making grid 2 partially narrow with making the compartment between grid 2 in change, effectively can reach the local existenceization of the electric field Ey of such s polarized light, and be speculated as and can improve extinction ratio thus.The raising of the extinction ratio shown in Fig. 3 is considered to based on such mechanism.
In addition, when refractive index real part n specific damping coefficient k is little, the local existenceization of above-mentioned electric field Ey is not produced in fact.When refractive index real part n and attenuation coefficient k uses physical constant ε and μ to represent, become following formula 4.
[several 4]
Mean to possess negative dielectric according to formula 4, n < k.This means, fluctuation cannot enter inside, in the above cases, means and do not form electric field in grid 2.Therefore, the local existenceization of electric field as described above is not produced in fact.On the other hand, when partially producing the large position of grid spacings in change by making grid 2, s polarized light is easily propagated through this position, and result extinction ratio declines significantly.The sharply reduction of the extinction ratio shown in Fig. 4 and Fig. 6 is considered to such situation.
Figure 10 is the figure to the result that the optimum configuration of the grid polarizer of the grid 2 employing such amorphous silicon is discussed.As shown in Fig. 3 (2), make partially when reducing from 1 than t/T (gradually inclined), extinction ratio uprises immediately.Extinction ratio becomes peak value at certain t/T, then declines.Further, with certain t/T for boundary, extinction ratio diminishes than relative value 1.That is, with not partially situation compared with, extinction ratio diminishes.Therefore, as long as the value of t/T when extinction ratio is less than relative value 1 (hereinafter referred to as critical partially than) more than inclined than.
Figure 10 is that this is critical partially than carrying out illustrated figure.Straight line shown in Figure 10 be to the most little bis-of each tag application ?method and the straight line of drawing.As shown in the figure, as long as be set to t/T > 0.0159w+0.3735, the raising of extinction ratio can just be predicted.Further, known with reference to Fig. 3 (1), within the scope of this, transmitance declines hardly.That is, the grid polarizer that extinction ratio and transmitance get both can be obtained.
The manufacture method of the grid polarizer of following explanation embodiment.The following description is also the explanation of the working of an invention mode of grid polarizing element manufacturing method.
Figure 11 is the skeleton diagram of the manufacture method of the grid polarizer representing embodiment.In the manufacture method of embodiment, first, as shown in Figure 11 (1), transparency carrier 1 makes intermediate film 3.Intermediate film 3 becomes the film of substrate when being the films making grid.Intermediate film 3 finally will be removed, so material is not particularly limited.As long as shape stability good and etch time can remove rapidly.Such as, organic material, the carbon etc. such as photo etching are elected as the material of intermediate film 3.
Then, as shown in Figure 11 (2), photoetching is carried out and by intermediate film 3 one-tenth figure (patterning).That is, whole of photo etching coating and exposure, video picture, etching and by intermediate film 3 one-tenth figure is carried out.One-tenth figure makes intermediate film 3 become by the multiple wire portions extended along paper vertical direction (hereinafter referred to as middle wire portion) 31 striateds formed.At this moment, interval t, the T in the width L1 in each middle wire portion 31 and each wire portion 21 of the final grid 2 made of separation spacing L2 decision thereof.
Then, as shown in Figure 11 (3), intermediate film 4 is made in the side of the groove formed by each middle wire portion 31.Grid film 4 only makes in the side of groove, but usually covers whole and at integral manufacturing grid film 4.Grid film 4 is the films be made up of the material of grid 2 and silicon, such as, made by sputtering method.Grid carries out the anisotropic etching of grid film 4 after making of film 4.Anisotropic etching is the etching of the thickness direction of transparency carrier 1.By this etching, as shown in Figure 11 (4), become the state remaining grid film 4 in the two side in middle wire portion 31.
Then, use the etchant that only can etch the material of intermediate film 3 to etch, each middle wire portion 31 is all removed.Thus, become the grid 2 be made up of each wire portion 21 of silicon and be formed in state on transparency carrier 1, obtain the grid polarizer of embodiment.The grid polarizer obtained has the inclined to than t/T of regulation, determines size L1, the L2 in each middle wire portion 31 in order to become this value according to raster width W.
There is the inclined manufacture method at the grid polarizer than t/T of regulation, except the method shown in Figure 11, can also additive method be had.About this point, Figure 12 is used to be described.Figure 12 is the skeleton diagram of another manufacture method of the grid polarizer representing embodiment.
In the manufacture method shown in Figure 12, also on transparency carrier 1, make intermediate film 3, carry out photoetching and by intermediate film 3 one-tenth figure.At this moment, compared with the method shown in Figure 11, the drawing methods of intermediate film 3 is different.
In fig. 11, be formed with the position of the slit of narrower width t on the final product, form each middle wire portion 31 with the width L1 suitable with this width t.Then, the separation spacing in each middle wire portion 31 is set to the interval L2 that will be added compared with the width T of wide slot and the width (raster width W) in wire portion 21 and obtain.On the other hand, in the method shown in Figure 12, be formed with the position of slit of more wide degree T, form each middle wire portion 31 with the width L1 worked as with this width T-phase.Then, the separation spacing in each middle wire portion 31 is set to the interval L2 that the width t of narrower slit and the width in wire portion 21 are added and are obtained.
Identical in fact except above-mentioned point, carry out the making (Figure 12 (3)) of grid film 4, the anisotropic etching (Figure 12 (4)) of grid film 4, each middle wire portion 31 removing (Figure 12 (5)) and on transparency carrier 1, form grid 2.Also the grid polarizer of above-mentioned embodiment can be manufactured by such method.
The manufacture method of Figure 11 and the manufacture method of Figure 12 are of equal value technically, and from the viewpoint of the easiness, the dimensional accuracy of grid 2, the key property etc. of product that manufacture, the method shown in Figure 11 advantageously.Compare known by Figure 11 (3) and Figure 12 (3), when making grid with film 4, the aspect ratio of the groove formed by each middle wire portion 31, the manufacture method of Figure 12 is higher than the manufacture method of Figure 11.The film production of the inner face of the groove that aspect ratio is high is usually more difficult, easily thinning at the part thickness of groove depth.
In addition, in the anisotropic etching of grid with film 4, when Figure 12 (4), compared with Figure 11 (4), anisotropic etching must be carried out to the bottom surface of the high groove of aspect ratio.Make etchant optionally arrive the usual comparatively difficulty in bottom surface of the high groove of aspect ratio, easily remain at bottom surface grid film 4.If remained grid film 4 in bottom surface, then as seen from the foregoing description, the decline of the key property such as extinction ratio and transmitance of grid polarizer can be caused.
In addition, in the manufacture method of Figure 11 and the manufacture method of Figure 12, in the grid polarizer produced, the shape of grid 2 is slightly different.Use Figure 13 that this point is described.Figure 13 is the skeleton diagram of the shape difference of the grid polarizer representing the grid polarizer that manufactured by the manufacture method of Figure 11 and manufactured by the manufacture method of Figure 12.
The anisotropic etching of grid film 4 when the grid polarizer showing in detail embodiment in fig. 13 manufactures.Wherein, Figure 13 (1-1) is corresponding to the manufacture method of Figure 11, and Figure 13 (2-1) is corresponding to the manufacture method of Figure 12.
In the anisotropic etching of grid with film 4, in order to eliminate the residual of the grid film 4 of trench bottom, often carry out etching (crossing etching) superfluous a little.Anisotropic etching is by carrying out with the ion in electric field attracts plasma, and the marginal portion of channel opening is easily charged, although give anisotropy by electric field, but marginal portion is easily subject to strong bombardment by ions.Therefore, as shown in figure 13, grid film 4 easily becomes in the marginal portion of channel opening by the cross sectional shape of oblique cutting.
Therefore, in the grid 2 of the grid polarizer produced, the upper surface in each wire portion 21 becomes frustum face.At this moment, as shown in Figure 13 (1-2), in the manufacture method of Figure 11, the upper surface in each wire portion 21 is frustum faces of the step-down gradually towards the slit compared with wide interval T side, on the other hand, in the manufacture method shown in Figure 12, as shown in Figure 13 (2-2), the upper surface in each wire portion 21 is frustum faces of the step-down gradually towards the slit of t side, narrower interval.Due to the difference of the cross sectional shape in so each wire portion 21, can identify manufactured by the manufacture method of Figure 11 or to be manufactured by the manufacture method of Figure 12.
Next, the example of such grid polarizer is described.Figure 14 represents the example of the grid polarizer of embodiment, is the cross section skeleton diagram of the light aligning device having carried grid polarizer.
Device shown in Figure 14 is the light aligning device of the optical alignment film for obtaining aforesaid liquid crystal display, by irradiating polarized light to object (workpiece) 10, makes the molecular configuration of workpiece 10 become the unified state to certain direction.Therefore, workpiece 10 is films (film material) of optical alignment film, such as, be the thin slice of pi.Workpiece 10 is in laminar situation, adopts roller to the mode of transport of roller, in conveyance way, irradiate polarized light.Sometimes also become workpiece by the crystal liquid substrate that the film material of light orientation covers, in this case, adopt in crystal liquid substrate placing to objective table and the formation of carrying or being carried by travelling belt.
Device shown in Figure 14 possesses: light source 5, the catoptron 6 covering the behind of light source 5 and the grid polarizer 7 be configured between light source 5 and workpiece 6.Grid polarizer 7 is grid polarizers of aforesaid embodiment.
In most cases, in light orientation, need irradiation ultraviolet radiation, so the UV-lamp that light source 5 uses high-pressure mercury-vapor lamp such.Light source 5 is used in light source longer on the direction (in this case paper vertical direction) in the carrying direction perpendicular to workpiece 10.
As described above, grid polarizer 7 with the length of grid 2 for benchmark, make p polarized light optionally through.Therefore, make the polarization axle of p polarized light towards the direction of carrying out light orientation, grid polarizer 7 is configured preferably relative to workpiece 10 posture precision.
In addition, owing to being difficult to manufacture large-scale grid polarizer, so need to when irradiating polarized light compared with large regions, adopt multiple grid polarizer arrangements formation at grade.In this case, each grid polarizer is configured to, and the face arranging multiple grid polarizer is parallel with the surface of workpiece 10, workpiece relative to the length direction of the grid in each grid polarizer be in regulation towards.
The grid polarizer of above-mentioned embodiment, grid 2 is formed by the silicon of amorphous, and in use wavelength, refractive index real part n is greater than attenuation coefficient k, so need not reduce transmitance, just can improve extinction ratio.Therefore, it is possible to irradiate the better polarized light of quality.In addition, raster width w is different between each wire portion 21 due to other reasons such as the deviations in manufacture, when applying above-mentioned formula, the mean value of the width in each wire portion 21 is applied.
In addition, the light aligning device carrying such grid polarizer uses the grid polarizer that extinction ratio is high, so can carry out the light orientation process of high-quality, can obtain the optical alignment film of high-quality.Therefore, can contribute significantly the manufacture of the display of high image quality.
In addition, in the structure of the grid polarizer of embodiment, describe the part that periodically there is t ≠ T, but the structure (structure shown in Fig. 1) that the part of the part of distance t and distance T alternately exists is an example wherein.In addition the inclined of periodic grid it will also be appreciated that much at structure.But, the partial continuous that not preferred wire portion 21 arranges with wide separation spacing T.This is because, s polarized light this part easily through and extinction ratio reduce.When by the Shape Representation of grid spacings being t (narrow), T (wide), as another example preferred, ttTttTttT can be enumerated ... or ttTtTttTtT ... Deng.Comprise this example, the present application does not get rid of the part comprising t=T.That is, in the condition that all sites t ≠ T is not necessary.But from the viewpoint obtaining the effect that extinction ratio improves, the region over half be preferably in the whole region of grid becomes t ≠ T.
In addition, in the above-described embodiment, use the ultraviolet (such as 365nm) that wavelength is more than 330nm, but use wavelength is for also using the grid polarizer of the present application when more than 400nm (visible ray).Such as, also can use suitably in the visible range close to ultraviolet region of 400 ~ 450nm degree.
Claims (9)
1. a grid polarizer, is characterized in that,
This grid polarizer is made up of the grid of transparency carrier and setting striated on the transparent substrate, makes the light polarization of the wavelength that refractive index real part n specific damping coefficient k is large in the material of grid,
Grid is formed by the silicon of amorphous,
The distance forming each wire portion of grid and the adjacent wire portion of side is set to t, when the distance in the adjacent wire portion with opposite side is set to T, there is to grid cycle the part of t < T in fact.
2. grid polarizer as claimed in claim 1, is characterized in that,
The wavelength that described refractive index real part n specific damping coefficient k is large is more than 330nm.
3. grid polarizer as claimed in claim 1 or 2, is characterized in that,
When the mean value of the width in described each wire portion is set to w, in the part of described t < T, be in the relation of t/T > 0.0159w+0.3735.
4. grid polarizer as claimed in claim 1 or 2, is characterized in that,
When observing from the direction on the surface along described transparency carrier and perpendicular to the direction of the length direction in described wire portion, described grid does not have position as following, the position of this position partial continuous that to be two described wire portions arrange from T across width.
5. a light aligning device, is characterized in that,
Possess the grid polarizer according to any one of light source and Claims 1 to 4,
Between the irradiation area that grid polarizer is configured in the film material being configured with light orientation and light source.
6. a polarizing method, is characterized in that,
This polarizing method uses the grid polarizer be made up of with the grid of the striated arranged on the transparent substrate transparency carrier, makes the light polarization of the wavelength that refractive index real part n specific damping coefficient k is large in the material of grid,
Grid is formed by the silicon of amorphous,
The distance forming each wire portion of grid and the adjacent wire portion of side is set to t, when the distance in the adjacent wire portion with opposite side is set to T, there is to grid cycle the part of t < T in fact.
7. polarizing method as claimed in claim 6, is characterized in that,
The wavelength that described refractive index real part n specific damping coefficient k is large is more than 330nm.
8. polarizing method as claimed in claims 6 or 7, is characterized in that,
When the mean value of the width in described each wire portion is set to w, in the part of described t < T, be in the relation of t/T > 0.0159w+0.3735.
9. a grid polarizing element manufacturing method, manufactures grid polarizer, it is characterized in that,
This grid polarizer is made up of the grid of transparency carrier with the striated be arranged on transparency carrier,
If the distance forming the slit in each wire portion of grid and the adjacent wire portion of side is t, if when being T with the distance of the slit in the adjacent wire portion of opposite side, there is to grid cycle the part of t < T in fact,
This grid polarizing element manufacturing method has following operation:
Intermediate film production process, makes intermediate film on the transparent substrate;
Photo-mask process, becomes figure to become the striated be made up of multiple middle wire portion by intermediate film;
Grid thin film fabrication process, makes grid film in the side of each groove of the intermediate film being become striated by photo-mask process; And
Intermediate film removal step, removes intermediate film and forms described each wire portion by grid film;
Photo-mask process is following operation: form each middle wire portion in the position of the slit being formed with described distance t according to the width L1 suitable with this distance t, is set to by the separation spacing in each middle wire portion and is added with the width in described wire portion by described distance T and the distance L2 obtained.
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| CN105652507A (en) * | 2016-02-29 | 2016-06-08 | 广东小天才科技有限公司 | Film-coated polarized light display screen, mobile terminal and production method of film-coated polarized light display screen |
| WO2019242425A1 (en) * | 2018-06-22 | 2019-12-26 | 深圳Tcl新技术有限公司 | Quantum dot liquid crystal panel and manufacturing method therefor |
| CN111201475A (en) * | 2017-10-24 | 2020-05-26 | 旭化成株式会社 | Image display device, wire grid polarizing plate and manufacturing method thereof, wire grid polarizing plate observation method, and wire grid polarizing plate polarization axis direction estimation method |
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| JP6884501B2 (en) * | 2015-08-25 | 2021-06-09 | 大日本印刷株式会社 | Polarizer |
| JP6988079B2 (en) * | 2016-12-14 | 2022-01-05 | ウシオ電機株式会社 | Method for manufacturing grid polarizing element and grid polarizing element for ultraviolet rays |
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