CN110629173A - Magnetron control method, magnetron control device and magnetron sputtering equipment - Google Patents

Magnetron control method, magnetron control device and magnetron sputtering equipment Download PDF

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Publication number
CN110629173A
CN110629173A CN201810659504.2A CN201810659504A CN110629173A CN 110629173 A CN110629173 A CN 110629173A CN 201810659504 A CN201810659504 A CN 201810659504A CN 110629173 A CN110629173 A CN 110629173A
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magnetron
sub
film thickness
area
motion
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CN110629173B (en
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兰玥
侯珏
宿晓敖
赵崇军
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Beijing Naura Microelectronics Equipment Co Ltd
Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a magnetron control method, a magnetron control device and magnetron sputtering equipment. The method comprises the following steps: the method comprises the steps of obtaining the film thickness of a film layer deposited in different deposition areas on a wafer in a state that a magnetron rotates at a constant speed; wherein, the particles sputtered from the target material are sputtered onto the wafer within a specific incidence angle range; dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thickness, wherein each sub motion area corresponds to a deposition area; respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, and reducing the retention time of the magnetron corresponding to the sub-motion area with relatively large film thickness; and increasing the residence time of the magnetron corresponding to the sub-motion areas with relatively small film thickness so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform. The film thickness of the deposition area corresponding to each sub-motion area can be rapidly consistent, the thickness uniformity of the film layer is improved, the processing and manufacturing yield of the wafer is improved, and the manufacturing cost is reduced.

Description

Magnetron control method, magnetron control device and magnetron sputtering equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a magnetron control method, a magnetron control device and magnetron sputtering equipment.
Background
In the subsequent processes of integrated circuit chip fabrication, magnetron sputtering in Physical Vapor Deposition (PVD) is one of the most widely used techniques. Metal interconnects, hard masks, packaging all require the use of PVD techniques. Metal interconnects are the most critical technology, and metal wires are deposited by PVD in trenches and vias formed by photolithography to interconnect transistors to form the desired circuits. A complete metal interconnect process is generally comprised of: Barrier/Seed Layer (Barrier/Seed Layer) deposition, copper Electroplating (ECP), Chemical Mechanical Polishing (CMP). As the integration level of chips increases, the number of wiring layers required for interconnection increases. The formation of the multi-layered metal wiring is achieved by patterning through a photolithography technique after CMP, and repeating a metal interconnection process.
Generally, a magnetron sputtering apparatus includes a reaction chamber, a target, a magnetron, and a driving mechanism for driving the magnetron to move, but the magnetron moves while having a partial overlap region, which may cause a film thickness of a film deposited on a surface of a wafer in the overlap region to increase, thereby causing the film thickness to be non-uniform.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a magnetron control method, a magnetron control device and magnetron sputtering equipment.
In order to achieve the above object, in a first aspect of the present invention, there is provided a magnetron control method for improving film thickness uniformity of a deposited film layer in a magnetron sputtering apparatus, including:
step S110, acquiring the film thickness of the film layer deposited in each different deposition area on the wafer under the state that the magnetron rotates at a constant speed; wherein, the particles sputtered from the target material are sputtered onto the wafer within a specific incidence angle range;
step S120, dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thicknesses, wherein each sub motion area corresponds to one deposition area;
step S130, respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, enabling the magnetron to rotate at a non-uniform speed, and reducing the retention time of the magnetron in the sub-motion area corresponding to the sub-motion area with the relatively large film thickness; and increasing the residence time of the magnetron in the sub-motion area corresponding to the sub-motion area with relatively small film thickness so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
Optionally, in step S110, the collimator is set such that the particles sputtered from the target are sputtered onto the wafer within a specific incident angle range.
Optionally, in step S120, according to the difference of the obtained film thickness in the radial direction of the wafer, the moving area of the magnetron is radially divided into a plurality of concentric sub-moving areas by taking the rotation center of the magnetron as a center of a circle.
Optionally, the magnetron adopts a planetary motion mechanism, and step S130 specifically includes:
obtaining the distance D between the magnetron and the rotation center and the rotation speed w of the magnetron2And a functional relationship between time t;
judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area with relatively larger film thickness2(ii) a Reducing the rotation speed w of the magnetron in the sub-motion region corresponding to the relatively small film thickness2。
In a second aspect of the present invention, a magnetron control device is provided for improving the film thickness uniformity of a deposited film in a magnetron sputtering apparatus, including:
the acquisition module is used for acquiring the film thickness of the film layer deposited in different deposition areas on the wafer in the state that the magnetron rotates at a constant speed;
the sputtering particle constraint module is used for enabling particles sputtered from the target material to be sputtered onto the wafer within a specific incidence angle range;
the dividing module is used for dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thicknesses, and each sub motion area corresponds to one deposition area;
the control module is used for respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, so that the magnetron rotates at a non-uniform speed, and the residence time of the magnetron in the sub-motion area is reduced corresponding to the sub-motion area with the relatively large film thickness; and increasing the residence time of the magnetron in the sub-motion area corresponding to the sub-motion area with relatively small film thickness so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
Optionally, the sputter particle confinement module comprises a collimator.
Optionally, the dividing module is configured to:
and dividing the motion area of the magnetron into a plurality of concentric sub-motion areas along the radial direction by taking the rotation center of the magnetron as the center of a circle according to the difference of the obtained film thickness in the radial direction of the wafer.
Optionally, the magnetron employs a planetary motion mechanism, and the control module is configured to:
obtaining the distance D between the magnetron and the rotation center and the rotation speed w of the magnetron2And a functional relationship between time t;
judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area with relatively larger film thickness2(ii) a Reducing the rotation speed w of the magnetron in the sub-motion region corresponding to the relatively small film thickness2。
In a third aspect of the present invention, there is provided a magnetron sputtering apparatus comprising a magnetron and a magnetron control device, wherein the magnetron control device comprises the magnetron control device described in the foregoing.
Optionally, the magnetron sputtering device further comprises a reaction chamber, a target and a driving mechanism for driving the magnetron to rotate;
a base is arranged in the reaction chamber and used for bearing the wafer;
the target is arranged at the top of the reaction chamber;
the magnetron is arranged above the target material;
the sputtering particle confinement module is located between the pedestal and the target.
The invention provides a magnetron control method, a magnetron control device and magnetron sputtering equipment. According to the difference of the film thickness deposited in different deposition areas on the wafer under the state that the magnetron rotates at a constant speed, the moving area of the magnetron is divided into a plurality of sub moving areas, each sub moving area corresponds to one deposition area, the residence time of the magnetron is reduced for the sub moving area with relatively large film thickness, and the residence time of the magnetron is increased for the sub moving area with relatively small film thickness. Therefore, the film thickness of the deposition area corresponding to each sub-motion area can be rapidly consistent, the thickness uniformity of the film layer is improved, the processing and manufacturing yield of the wafer is improved, and the manufacturing cost is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural view of a driving mechanism for driving a magnetron to move according to a first embodiment of the present invention;
FIG. 2 is a graph of distance of a magnetron from a center of rotation versus operating time for a single cycle in a second embodiment of the invention;
FIG. 3 is a flowchart of a magnetron control method according to a third embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a collimator according to a fourth embodiment of the present invention;
FIG. 5 is a schematic diagram of the operation of a fifth embodiment of the collimator according to the present invention;
FIG. 6 is a graph showing the relationship between the distance from the rotation center in a single magnetron cycle before and after shifting and the operation time according to a sixth embodiment of the present invention;
FIG. 7 is a schematic diagram of a magnetron operation track according to a seventh embodiment of the present invention;
FIG. 8a is a graph showing the result of 49 point measurement of the film resistance using a constant deposition film according to the eighth embodiment of the present invention;
FIG. 8b is a diagram showing the result of 49-point measurement of film resistance using three variable deposition speed films according to the ninth embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a collimator in a tenth embodiment of the present invention;
FIG. 10 is a schematic structural diagram of a magnetron control device in an eleventh embodiment of the invention;
FIG. 11 is a schematic structural diagram of a magnetron sputtering apparatus according to a twelfth embodiment of the present invention.
Description of the reference numerals
100: a magnetic control device;
110: an acquisition module;
120: a sputtering particle confinement module;
121: a collimator;
130: a dividing module;
140: control module
200: a magnetron sputtering apparatus;
210: a magnetron;
220: a reaction chamber;
221: a base;
230: a target material;
240: a drive mechanism;
241: a rotating shaft;
242: a second gear;
243: a third gear;
244: a fourth gear;
245: a first connecting plate;
246: a second connecting plate;
300: and (5) a wafer.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
For the purpose of the invention, the background of the invention will be described:
as shown in fig. 1, a schematic view of a driving mechanism for driving the magnetron to move is shown, which is a planetary type moving mechanism. The driving mechanism 240 includes a rotating shaft 241, a first gear (not shown), a second gear 242, a third gear 243, a fourth gear 244, and a first connecting plate 245. One end of the rotation shaft 241 is connected to a motor (not shown), and the other end is connected to the first connection plate 245 and the first gear. The first gear, the second gear 242, the third gear 243, and the fourth gear 244 are fixed to the first link plate 245. The second gear 242 is engaged with the first gear, the third gear 243 is engaged with the second gear 242, and the fourth gear 244 is engaged with the third gear 243. The magnetron 210 is connected to a rotation shaft of the fourth gear 244 through the second connection plate 246. When the motor drives the rotation shaft 241 to rotate, the first gear, the second gear 242, the third gear 243, and the fourth gear 244 rotate around the rotation shaft 241, and at the same time, the first gear, the second gear 242, the third gear 243, and the fourth gear 244 rotate around the respective central axes, so that the magnetron 210 rotates around the rotation shaft 241 while revolving around the central axis of the fourth gear 244, and the magnetron 210 scans the upper surface of the target.
Based on the driving mechanism, the motion track of the magnetron 210 is mathematically analyzed to calculate the ratio of the staying time of the magnetron at the center and the periphery of the target, and then the technical scheme of the invention is provided on the basis of the ratio.
Assuming that the driving mechanism 240 has a large arm length of R (corresponding to the revolution radius of the magnetron) and a small arm length of R (corresponding to the rotation radius of the magnetron), the magnetron 210 moves with a maximum distance of R + R and a minimum distance of R-R from the rotation center. If the number of teeth of the second gear 242 is a, the number of teeth of the fourth gear 244 is b, and k is a/b, then when the number of teeth of the second gear is a/b, the second gear is aLarge arm with w1When the rotation speed is (rad/s), the small arm moves at w2＝-k·w1Is rotated (negative means opposite to the direction of rotation of the large arm). From this, the equation of motion of the magnetron (time t) when the large and small arms are all overlapped with the positive direction of the X axis when t is 0 is obtained:
wherein X is the abscissa of the center of the magnetron 210, Y is the ordinate of the center of the magnetron 210, R is the length of the large arm, R is the length of the small arm, w1Angular velocity of the large arm, w2Which is the angular velocity of the small arm, i.e., the rotational speed of the magnetron 210, t is the moment of movement of the magnetron 210.
According to the formula (1), it is found that the distance between the center of the magnetron 210 and the rotation center satisfies:
D2＝X2+Y2＝R2+r2+2·R·rcos(w2·t) (2)
where D is the distance between the center of the magnetron 210 and the center of rotation.
Obviously, D2Period T of0Comprises the following steps:
as can be seen from equations (2) and (3), D2Is a period of T0The cosine-like function of (1), i.e., the distance between the center of the magnetron 210 and the center of rotation, is a cosine-like function. As shown in fig. 2, a graph illustrating the distance of the center of the magnetron 210 from the center of rotation versus the run time for a single cycle is shown.
Assuming that the inner and outer regions of the target are distinguished by the position of the radius D ═ D, the time that the magnetron 210 stays on the outer circle of the target in one cycle and the ratio of the outer circle time to the whole cycle can be obtained:
wherein, toutTime of outer circle, tratioThe ratio of the outer circle time to the whole period, T0Is the operating cycle of the magnetron 210.
According to the formula (5), the proportion is independent of the gear ratio, namely once the lengths of the large arm and the small arm are determined, the time of the magnetron moving in the D > D area accounts for the whole period and is constant no matter what gear ratio is used. d can be any value, and in a broad sense, once the lengths of the large arm and the small arm are determined, the time ratio of the movement of the magnetron in any radius area is fixed and constant no matter what gear ratio is used.
Based on the above analysis, assuming that the moving area of the magnetron is divided into the inner, middle and outer rings, the time ratios of the movement of the magnetron 210 in the inner, middle and outer rings are all fixed. However, since the magnetron 210 has a certain size, the inner and outer positions thereof have a certain overlap, resulting in the thickest film thickness of the middle ring; for the same reason, although the residence time of the magnetron 210 in the unit area of the inner ring is the same as that of the outer ring, the inner ring is overlapped more and the film thickness is thicker in consideration of the overlapping effect caused by the size of the magnetron 210; in contrast, although the magnetron 210 stays on the outer ring for the same time per unit area, the film layer obtained is the thinnest because the different positions do not overlap with each other. Based on this, the inventors of the present invention devised the present invention.
As shown in fig. 3, a first aspect of the present invention relates to a magnetron control method S100 for improving film thickness uniformity of a deposited film in a magnetron sputtering apparatus, including:
s110, film thicknesses of films deposited in different deposition areas on the wafer in a state that the magnetron rotates at a constant speed are obtained, wherein particles sputtered from the target are enabled to be sputtered onto the wafer within a specific incidence angle range.
In this step, there is no limitation on how to obtain the film thickness of the film deposited in each deposition area, for example, the film thickness of each deposition area can be measured by a thickness measuring instrument, and the like.
In addition, how to sputter the particles sputtered from the target onto the wafer in a specific incident angle range in this step is not specifically limited, and may be realized by a collimator, for example. Of course, other similar collimator configurations are possible.
And S120, dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thicknesses, wherein each sub motion area corresponds to one deposition area.
S130, respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, enabling the magnetron to rotate at a non-uniform speed, and reducing the retention time of the magnetron in the sub-motion area corresponding to the sub-motion area with the relatively large film thickness; and corresponding to the sub-motion area with relatively small film thickness, increasing the residence time of the magnetron in the sub-motion area so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
Specifically, in this step, the thicknesses of the deposition areas may be compared two by two, and the residence time of the magnetron in the sub-motion area may be reduced for the sub-motion area with a relatively large film thickness. For the sub-motion area with relatively small film thickness, the residence time of the magnetron in the sub-motion area is increased, so that the film thickness of the deposition area corresponding to each sub-motion area is consistent, and the uniformity is improved.
In the magnetron control method S100 in this embodiment, according to the difference in the film thickness deposited in each different deposition area on the wafer in the state where the magnetron is rotating at a constant speed, the movement area of the magnetron is divided into a plurality of sub movement areas, each sub movement area corresponds to one deposition area, the film thickness of the deposition area corresponding to each sub movement area is compared, the residence time of the magnetron in the sub movement area is reduced for the sub movement area with a relatively large film thickness, and the residence time of the magnetron in the sub movement area is increased for the sub movement area with a relatively small film thickness. Therefore, the film thickness of the deposition area corresponding to each sub-motion area can be rapidly consistent, the uniformity of the thickness of the wafer is improved, the processing and manufacturing yield of the wafer is improved, and the manufacturing cost is reduced.
Optionally, in step S110, the collimator is set such that the particles sputtered from the target are sputtered onto the wafer within a specific incident angle range.
Specifically, the typical structure of the collimator is shown in fig. 4, and in conjunction with fig. 4 and 5, due to the blocking effect of the collimator 121 on large-angle particles, material at any point on the wafer 300 can only be sputtered when the magnetron moves to a limited area (the area is determined by the depth-to-width ratio of the collimator) on the surface of the target 230 directly above the point, and as shown in fig. 5, two points A, B on the wafer 300 can only receive particles sputtered from the target 230 in the respective angles of the cone directly above, and the particles sputtered at the rest angles will be blocked by the collimator 121. And when the aspect ratio of the collimator 121 is larger, the collimator 121 has a stronger blocking effect on large-angle particles, and in an extreme case, the material deposited on a certain point on the wafer 300 can only be generated by sputtering the target 230 above the collimator 121 hole which the point is directly opposite to.
Optionally, in step S120, according to the difference of the obtained film thickness in the radial direction of the wafer, the moving area of the magnetron is radially divided into a plurality of concentric sub-moving areas with the rotation center of the magnetron as the center.
Specifically, the magnetron employs a planetary motion mechanism, which can be referred to the related description, and will not be described herein. Step S130 specifically includes:
obtaining the distance D between the magnetron and the rotation center and the rotation speed w of the magnetron2And time t, which can be referred to in the foregoing equation (2).
Judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area corresponding to the relatively larger film thickness2To reduce the dwell time of the magnetron in the sub-motion region; in the sub-motion region corresponding to relatively small film thickness, the rotation speed w of the magnetron is reduced2To increase the dwell time of the magnetron in the sub-motion region.
In particular, in a simpler case, the movement zone of the magnetron can be divided into 3 zones by its distance D from the rotation centre: R-R<D<r1、r1<D<r2、r2<D<R + R. That is, the moving area of the magnetron is divided into an inner circle, a middle circle, and an outer circle. Wherein r is1，r2Is two key values selected from the range of the distance from the rotation center when the magnetron moves, and has R-R<r1<r2<R + R. In practice, the magnetron is set at r1<D<r2The region has the fastest moving speed at r2<D<The R + R area has the slowest movement speed, and the staying time proportion of the R + R area in each area is adjusted, so that the aim of improving the uniformity of the thickness of the deposited film is fulfilled.
In addition, with reference to the formula (2) before the introduction, the drive motor is set at the speed v1The magnetron is driven to move from the position with the maximum radius (R + R) to the position with the radius R2Then at a speed v2Drive the magnetron to move to radius r1Then at a speed v3The magnetron is driven to move to the position (R-R) of the minimum radius. The magnetron is run for half a cycle after reaching the minimum, the motion for the second half cycle being the same as the first half cycle: continues at speed v3Move to radius r1Is switched to a velocity v2Move to radius r2At a position of, and then at a velocity v1Moving downwards to the position with the maximum radius; this is one complete cycle. In this case, the relationship between the distance of the magnetron from the rotation center and the operation time is shown in the left half of fig. 6. In FIG. 6, the left half shows the relationship between the distance from the magnetron to the rotation center after shifting and the operation time, and the right half shows the relationship between the distance during uniform motion and the operation time. It can be seen that the magnetron is at r before the speed change1，r2The running time proportion of the inner ring, the middle ring and the outer ring is respectively 20%, 40% and 40%; and the running time proportion of the inner ring, the middle ring and the outer ring after the speed change is respectively 20 percent, 20 percent and 60 percent.
In one embodiment, the magnetron is operatedThe length of the large arm of the moving mechanism is 115mm, the length of the small arm is 55mm, and the moving range of the magnetron is 60mm to 170mm in radius (distance from the rotating center). The interval division point (key value) is selected as radius r175mm and radius r2Position 145 mm. Then the range of motion of the magnetron is divided into 3 intervals according to the selected division point, namely into an inner ring, a middle ring and an outer ring: (1) moving in an area with a radius between 60mm and 75 mm; (2) moving in an area between radii 75mm and 145 mm; (3) moving in an area between radii 145mm and 170 mm. The collimator used has an aspect ratio of 2, and the aspect ratios of all the through holes in the collimator are the same. Motor running speed v of making magnetron in region (3)3Slowest, and in the region (2) the motor running speed v2Fastest motor running speed v in region (1)1Constant, velocity ratio v in 3 intervals from inside to outside1:v2:v3The running track is shown in fig. 7 as 2:3: 1.
FIG. 8(a) shows the data of 49 points of film resistance (Rs) of a film deposited at a constant speed, and FIG. 8b shows the data of 49 points of film resistance (Rs) of a film deposited at three speed (49 points are a measurement method commonly used in the industry, in this example, the diameter of a wafer is 300mm, and 1, 8, 16 and 24 data points are respectively measured on a circle with the radius of 0mm, 49mm, 98mm and 147mm to ensure that the points collected on the wafer can reflect the whole situation. FIG. 8a shows resistivity data of the film layer deposited without speed change, where the larger the Rs is, the thinner the film thickness is, and it can be seen that the center of the film layer deposited without speed change is thickest and the outermost ring is thinnest; the homogeneity is only 18.2% at this point. In order to improve the uniformity of film thickness. FIG. 8b shows the equation r1＝75mm，r2145mm is Rs data obtained when the gear shift is divided into three sections by the sectional point. Thereby improving the uniformity of the film thickness of the deposited film layer to 2.6 percent.
In addition, in another embodiment, the collimator 121 used has a shape as shown in fig. 9, and the shifting scheme used is changed accordingly. If 3-stage speed change is still adopted, the residence time of the magnetron in the middle ring is the longest, and the residence time of the magnetron in the outer ring is the next to the residence time of the magnetron in the inner ring is the shortest.
In practice, the division of the magnetron movement area is not limited to the way shown in fig. 6, but is determined according to the radial distribution of the thickness of the film layer actually deposited. Since the aspect ratio of the collimator has a large influence on the deposition rate of the film layer: the deposition rate is slow in the area with large aspect ratio and slow in the area with small aspect ratio. According to the different radial distributions of the aspect ratios of the collimators used, the thicknesses of the deposited film layers will also have correspondingly different radial distributions. But the principle of changing the motor speed is the same: in the radial direction, the operating time ratio of the magnetron in the region can be properly improved due to the relatively thin area of the film layer; the relatively thick region of the film should be appropriate to reduce the operating time duty of the magnetron in this region. The number of the concentric circle/circular ring sections divided by the radius of the magnetron does not have to be 3, and may be any number of sections of 2 or more. Once the mechanical structure is determined, the relationship between the operating period of the magnetron and the distance from the rotating center along with the time is determined, the time corresponding to the track dividing radius point is also determined, and the multi-stage control of the moving speed of the magnetron can be realized by programming a PLC program of the motor.
In a second aspect of the present invention, as shown in fig. 10, there is provided a magnetron control apparatus 100 for improving film thickness uniformity of a deposited film in a magnetron sputtering device, including:
the obtaining module 110 is configured to obtain film thicknesses of films deposited in different deposition areas on a wafer in a state that the magnetron rotates at a constant speed;
a sputtering particle confinement module 120, configured to enable particles sputtered from the target to be sputtered onto the wafer within a specific incident angle range;
a dividing module 130, configured to divide a moving area of the magnetron into a plurality of sub-moving areas according to different obtained film thicknesses, where each sub-moving area corresponds to one deposition area;
the control module 140 is configured to compare the film thicknesses of the deposition areas corresponding to the sub-motion areas, respectively, so that the magnetron rotates at a non-uniform speed, and the residence time of the magnetron in the sub-motion area is reduced corresponding to the sub-motion area with a relatively large film thickness; and corresponding to the sub-motion area with relatively small film thickness, increasing the residence time of the magnetron in the sub-motion area so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
The magnetron control device 100 in this embodiment divides the moving area of the magnetron into a plurality of sub-moving areas according to the difference of the film thickness deposited in each different deposition area on the wafer in the state that the magnetron rotates at a constant speed, each sub-moving area corresponds to one deposition area, the film thickness of the deposition area corresponding to each sub-moving area is compared respectively, the residence time of the magnetron is reduced for the sub-moving area with a relatively large film thickness, and the residence time of the magnetron is increased for the sub-moving area with a relatively small film thickness. Therefore, the film thickness of the deposition area corresponding to each sub-motion area can be rapidly consistent, the thickness uniformity of the film layer is improved, the processing and manufacturing yield of the wafer is improved, and the manufacturing cost is reduced.
Optionally, the sputter particle confinement module 120 includes a collimator 121. Reference may be made to the above related descriptions, which are not repeated herein.
Optionally, the dividing module 130 is configured to:
according to the difference of the obtained film thickness in the radial direction of the wafer, the moving area of the magnetron is divided into a plurality of concentric sub-moving areas along the radial direction by taking the rotating center of the magnetron as the center of a circle.
Alternatively, the magnetron employs a planetary motion mechanism, and in particular, with reference to the above description, the control module 140 is configured to:
acquiring a functional relation between the distance D between the magnetron and the rotation center, the rotation speed of the magnetron and time t, wherein the functional relation can refer to the formula (2);
judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area corresponding to the relatively larger film thickness2To reduce the dwell time of the magnetron in the sub-motion region; in a sub-run corresponding to a relatively small film thicknessMoving field, reducing the speed of rotation w of the magnetron2To increase the dwell time of the magnetron in the sub-motion region.
The above detailed description can refer to the related descriptions, and will not be repeated herein.
In a third aspect of the present invention, as shown in fig. 11, there is provided a magnetron sputtering apparatus 200, including a magnetron 210 and a magnetron control device 100, the magnetron control device including the magnetron control device described above.
The magnetron sputtering apparatus 200 in this embodiment has the magnetron control device 100 described above, and divides the moving area of the magnetron into a plurality of sub-moving areas according to the difference of the film thicknesses deposited in different deposition areas on the wafer in the state of uniform rotation of the magnetron, each sub-moving area corresponds to one deposition area, and compares the film thickness of the deposition area corresponding to each sub-moving area, so as to reduce the residence time of the magnetron in the sub-moving area with a relatively large film thickness, and increase the residence time of the magnetron in the sub-moving area with a relatively small film thickness. Therefore, the film thickness of the deposition area corresponding to each sub-motion area can be rapidly consistent, the thickness uniformity of the film layer is improved, the processing and manufacturing yield of the wafer is improved, and the manufacturing cost is reduced.
Optionally, as shown in fig. 1 and fig. 11, the magnetron sputtering apparatus 200 further includes a reaction chamber 220, a target 230, and a driving mechanism 240 for driving the magnetron 210 to rotate. The reaction chamber 220 is provided therein with a susceptor 221 for carrying the wafer 300. The target 230 is disposed at the top of the reaction chamber 220. The magnetron 210 is disposed above the target 230. The collimator 121 is located between the base 221 and the target 230.
For the related description of the driving mechanism 240, reference may be made to the related description above, and the description is not repeated here.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. A magnetron control method is used for improving the film thickness uniformity of a deposited film layer in a magnetron sputtering device, and is characterized by comprising the following steps:
step S110, acquiring the film thickness of the film layer deposited in each different deposition area on the wafer under the state that the magnetron rotates at a constant speed; wherein, the particles sputtered from the target material are sputtered onto the wafer within a specific incidence angle range;
step S120, dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thicknesses, wherein each sub motion area corresponds to one deposition area;
step S130, respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, enabling the magnetron to rotate at a non-uniform speed, and reducing the retention time of the magnetron in the sub-motion area corresponding to the sub-motion area with the relatively large film thickness; and increasing the residence time of the magnetron in the sub-motion area corresponding to the sub-motion area with relatively small film thickness so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
2. The magnetron control method as claimed in claim 1, wherein in step S110, the collimator is arranged so that particles sputtered from the target are sputtered onto the wafer within a specific incident angle range.
3. The magnetron control method as claimed in claim 1 or 2, wherein in step S120, a moving area of the magnetron is divided into a plurality of concentric sub moving areas in a radial direction with a rotation center of the magnetron as a center according to a difference in the obtained film thickness in the radial direction of the wafer.
4. The magnetron control method of claim 3, wherein the magnetron adopts a planetary motion mechanism, and the step S130 specifically comprises:
obtaining the distance D between the magnetron and the rotation center and the rotation speed w of the magnetron2And the functional relationship between time t;
judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area with relatively larger film thickness2(ii) a Reducing the rotation speed w of the magnetron in the sub-motion region corresponding to the relatively small film thickness2。
5. A magnetron control device is used for improving the film thickness uniformity of a deposited film layer in a magnetron sputtering device, and is characterized by comprising the following components:
the acquisition module is used for acquiring the film thickness of the film layer deposited in different deposition areas on the wafer in the state that the magnetron rotates at a constant speed;
the sputtering particle constraint module is used for enabling particles sputtered from the target material to be sputtered onto the wafer within a specific incidence angle range;
the dividing module is used for dividing the motion area of the magnetron into a plurality of sub motion areas according to the difference of the obtained film thicknesses, and each sub motion area corresponds to one deposition area;
the control module is used for respectively comparing the film thickness of the deposition area corresponding to each sub-motion area, so that the magnetron rotates at a non-uniform speed, and the residence time of the magnetron in the sub-motion area is reduced corresponding to the sub-motion area with the relatively large film thickness; and increasing the residence time of the magnetron in the sub-motion area corresponding to the sub-motion area with relatively small film thickness so as to ensure that the film thickness of the deposition area corresponding to each sub-motion area is uniform.
6. The magnetron control apparatus of claim 5, wherein the sputter particle confinement module comprises a collimator.
7. The magnetron control apparatus of claim 5 or 6, wherein the dividing module is configured to:
and dividing the motion area of the magnetron into a plurality of concentric sub-motion areas along the radial direction by taking the rotation center of the magnetron as the center of a circle according to the difference of the obtained film thickness in the radial direction of the wafer.
8. The magnetron control apparatus of claim 7, wherein the magnetron employs a planetary motion mechanism, the control module to:
obtaining the distance D between the magnetron and the rotation center and the rotation speed w of the magnetron2And a functional relationship between time t;
judging the area of the magnetron, and increasing the rotating speed w of the magnetron in the sub-motion area with relatively larger film thickness2(ii) a Reducing the rotation speed w of the magnetron in the sub-motion region corresponding to the relatively small film thickness2。
9. A magnetron sputtering apparatus comprising a magnetron and a magnetron control device, characterized in that the magnetron control device comprises the magnetron control device of any one of claims 5 to 8.
10. The magnetron sputtering apparatus according to claim 9, further comprising a reaction chamber, a target, a driving mechanism for driving the magnetron to rotate;
a base is arranged in the reaction chamber and used for bearing the wafer;
the target is arranged at the top of the reaction chamber;
the magnetron is arranged above the target material;
the sputtering particle confinement module is located between the pedestal and the target.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114774872A (en) * 2022-04-29 2022-07-22 北京北方华创微电子装备有限公司 Magnetron device and magnetron sputtering equipment
CN116288225A (en) * 2023-03-06 2023-06-23 深圳市矩阵多元科技有限公司 Device and method for adjusting rotating radius of PVD magnetron and planar target power supply power

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1104262A (en) * 1993-09-17 1995-06-28 凡利安同仁股份有限公司 Method for controlling a collimated sputtering source
JP3749383B2 (en) * 1998-08-25 2006-02-22 株式会社昭和真空 Method and apparatus for controlling film thickness distribution in sputtering apparatus
CN103422065A (en) * 2012-05-16 2013-12-04 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetron sputtering device and magnetron control method
CN106498353A (en) * 2015-09-08 2017-03-15 深圳莱宝高科技股份有限公司 A kind of magnetically controlled sputter method and device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1104262A (en) * 1993-09-17 1995-06-28 凡利安同仁股份有限公司 Method for controlling a collimated sputtering source
JP3749383B2 (en) * 1998-08-25 2006-02-22 株式会社昭和真空 Method and apparatus for controlling film thickness distribution in sputtering apparatus
CN103422065A (en) * 2012-05-16 2013-12-04 北京北方微电子基地设备工艺研究中心有限责任公司 Magnetron sputtering device and magnetron control method
CN106498353A (en) * 2015-09-08 2017-03-15 深圳莱宝高科技股份有限公司 A kind of magnetically controlled sputter method and device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
赵时璐: "《高性能刀具及涂层刀具材料的切削性能》", 31 May 2010 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114774872A (en) * 2022-04-29 2022-07-22 北京北方华创微电子装备有限公司 Magnetron device and magnetron sputtering equipment
CN114774872B (en) * 2022-04-29 2023-09-08 北京北方华创微电子装备有限公司 Magnetron device and magnetron sputtering equipment
CN116288225A (en) * 2023-03-06 2023-06-23 深圳市矩阵多元科技有限公司 Device and method for adjusting rotating radius of PVD magnetron and planar target power supply power

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