CN103422065A - Magnetron sputtering device and magnetron control method - Google Patents

Abstract

The invention provides a magnetron sputtering device and a magnetron control method. The magnetron sputtering device comprises a reaction chamber, a target material, a magnetron, a driving mechanism, a magnetron positioning unit, and a control device. The driving mechanism is connected with the control device, and controls the self rotation speed and the revolution speed of the magnetron according to the control signal of the control device. The magnetron positioning unit is used for determining the initial position of the magnetron. The control device is used for determining the operation cycle of the magnetron according to the initial position, and controls the self rotation speed and the revolution speed of the driving mechanism according to the operation cycle, such that the retention time of the magnetron on unit area of the target material can be controlled on a basis that the frequency of the magnetron passing various positions of the target material is not changed. Therefore, target material etching uniformity can be improved. With the magnetron sputtering device, target material utilization rate can be improved, such that magnetron sputtering device operation cost can be reduced. Also, target material replacement time can be reduced, such that magnetron sputtering device utilization rate can be improved.

Description

Magnetron sputtering equipment and magnetron control method

Technical field

The invention belongs to the plasma process technical field, relate to a kind of magnetron sputtering equipment and magnetron control method.

Background technology

Magnetron sputtering technique is to introduce magnetic field at target material surface, utilizes magnetic field to retrain charged particle, increases the probability of collision of electronics and process gas, thereby can improve the density of plasma body, and then can improve working (machining) efficiency.Therefore the magnetron sputtering processing units is widely used in the production of unicircuit and thin film solar.

The structure diagram that Fig. 1 is typical magnetron sputtering processing units.As shown in Figure 1, the magnetron sputtering processing units comprises reaction chamber 1, is provided with the electrostatic chuck 2 for carrying workpiece to be machined in the bottom of reaction chamber 1.Be provided with target 3 at the top of reaction chamber 1, be provided with the magnetron 6 for improving sputter rate above target 3, magnetron 6 upper surface at target 3 under the driving of driving mechanism 7 rotates.

Fig. 2 is the structure diagram of the driving mechanism for driving magnetron.As shown in Figure 2, driving mechanism comprises rotating shaft 20, the first gear (not shown), the second gear 22, the 3rd gear 23, the 4th gear 24 and the first web plate 28, one end of rotating shaft 20 is connected with the motor (not shown), and the other end is connected with the first web plate 28 and the first gear.The first gear, the second gear 22, the 3rd gear 23, the 4th gear 24 are fixed on the first web plate 28.The second gear 22 and the engagement of the first gear, the 3rd gear 23 and the second gear 22 engagements, the 4th gear 24 and the 3rd gear 23 engagements.Magnetron 6 is connected with the rotating shaft of the 4th gear 24 by the second web plate 25.When motor-driven rotatable shaft 20 rotation, the first gear, the second gear 22, the 3rd gear 23 and the 4th gear 24 rotate centered by rotating shaft 20, meanwhile, the first gear, the second gear 22, the 3rd gear 23, the 4th gear 24 are respectively around central shaft rotation separately, thereby making magnetron 6 take the central shaft of the 4th gear 24 in 20 revolution around the shaft is the rotating shaft rotation, and then makes the upper surface scanning of magnetron 6 at target 3.

In actual use, although magnetron 6 according to projected path, the upper surface of target 3 can be covered.But, invariablenes turning speed due to motor, the time that makes magnetron 6 zone (be magnetron 6 tracks overlapping zones) more through number of times stop is more, thereby cause corrosion (consumption) speed of this zone target 3 very fast, and other regional erosion rate is slower, and then cause the utilization ratio of target 3 lower.

Fig. 9 is target erosion profile when existing driving mechanism drives the magnetron operation.Wherein, X-coordinate is the distance of target from the center to marginal position, and unit is mm; The etch depth that ordinate zou is target, unit is mm.As can be seen from Figure 9, very fast near the erosion rate in target center zone, and slower near the erosion rate of target fringe region, and the etch rate at target center and edge is very inhomogeneous, and the utilization ratio through measuring target 3 is only 53% left and right.

Summary of the invention

The technical problem to be solved in the present invention is exactly for the above-mentioned defect existed in inductively coupled plasma equipment, a kind of magnetron sputtering equipment is provided, it can make the erosion rate of target identical in the situation that do not change the original running orbit of magnetron, thereby can improve the utilization ratio of target.

In addition, the present invention also provides a kind of magnetron control method, and it not only can cover the whole surface of target, and can make magnetron even in the different positions residence time of target material surface, thereby can improve the utilization ratio of target.

The technical scheme adopted solved the problems of the technologies described above is to provide a kind of magnetron sputtering equipment, comprise reaction chamber, target, magnetron, drive the driving mechanism of described magnetron rotation and revolution, described target is arranged on the top of described reaction chamber, described magnetron is arranged on the top of described target, under the driving of described driving mechanism, described magnetron scans the surface of described target, described driving mechanism is connected with described control device, and control rotational velocity and the revolution speed of described magnetron according to the control signal of described control device, described magnetron sputtering equipment also comprises: magnetron positioning unit and control device, wherein:

Described magnetron positioning unit, for determining the starting position of described magnetron;

Described control device, be used for according to described starting position, determine the running period of magnetron, and according to the rotational velocity of controlling described driving mechanism described running period and revolution speed, thereby described magnetron by the constant prerequisite of each position number of times of target under, control the time that described magnetron stops on described target unit surface, make described magnetron shorten in the residence time in the target zone of frequent process, extend the residence time in the target zone sparse at movement locus, to improve the etching homogeneity of target simultaneously.

Wherein, described control device comprises the speed control subelement, and described speed control subelement makes the revolution circular frequency of described magnetron and spin velocity meet respectively formula (1) and formula

(2)：

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(1\right)$

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(2\right)$

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian;

ω 2 means the spin velocity of magnetron, unit: radian;

Ro1 means the revolution radius of magnetron, unit: millimeter;

Ro2 means the rotation radius of magnetron, unit: millimeter;

R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

Wherein, described driving mechanism comprises motor, gear assembly, the first web plate and the servo-driver of controlling described motor speed, wherein:

Upper surface at described target is provided with bracing frame, and described motor is fixed in support frame as described above;

Described gear assembly comprises n the gear meshed successively along described the first web plate length direction, and wherein n is greater than 2 integer, and a described n gear is fixed on described the first web plate;

Be positioned at outermost gear in described the first web plate and described gear assembly and be connected with the output shaft of described motor, described magnetron is connected with the central shaft of the output shaft gear farthest of the described motor of distance;

Under the driving of described motor, described the first web plate drives described gear assembly and described magnetron revolves round the sun centered by the output shaft of described motor, simultaneously, and the rotation centered by the central shaft of the described motor output shaft of distance gear farthest of described magnetron;

Described servo-driver is controlled the rotating speed of motor according to the control signal of described control device, thereby controls rotational velocity and the revolution speed of described magnetron.

Wherein, described gear assembly comprises the first gear, the second gear, the 3rd gear and the 4th gear of engagement successively, wherein,

Described the first gear is connected with the output shaft of described motor,

Described magnetron is connected with the central shaft of described the 4th gear by the second web plate.

Wherein, described magnetron is fixed on an end of described the second web plate, is provided with at the other end of described the second web plate the first counterweight that the weight with described magnetron is complementary, in order to improve the stability of described magnetron rotation.

Wherein, described gear assembly is partial to an end setting of described the first web plate, be provided with at the other end of described the first web plate the second counterweight that the weight sum with described gear assembly, described magnetron and described the first counterweight is complementary, in order to improve the stability of described magnetron revolution.

Wherein, described driving mechanism comprises absolute value encoder, described absolute value encoder is connected with described servo-driver and described motor, in order to the position of recording described magnetron and the number of turns of rotation and revolution, and the number of turns of the position of described magnetron and rotation and revolution is fed back to described control device by described servo-driver.

Wherein, described magnetron positioning unit comprises signal emission element and signal receiving part, and described signal emission element is for sending the magnetron signal for locating, and described signal receiving part is for receiving the magnetron signal for locating of sending from described signal emission element; Wherein:

Described signal emission element is fixed on described magnetron, and described signal receiving part is fixed on support frame as described above and is relative with the setting position of described signal emission element; Perhaps, described signal emission element is fixed on support frame as described above, and described signal receiving part is fixed on described magnetron and is relative with the setting position of described signal emission element.

Wherein, described sensor signal emission element is magnet, and described sensor signal receiving-member is the Hall switch integrated sensor.

The present invention also provides a kind of magnetron control method, for improving the etching homogeneity of magnetron sputtering equipment target, starting position according to described magnetron, determine the running period of magnetron, and according to the rotational velocity of controlling magnetron described running period and revolution speed, described magnetron by the constant prerequisite of each position number of times of target under, change the time that described magnetron stops on described target unit surface, make described magnetron shorten in the residence time in the target zone of frequent process, extend the residence time in the target zone sparse at movement locus simultaneously, to improve the etching homogeneity of target.

Wherein, the revolution circular frequency of described magnetron and spin velocity meet respectively formula (1) and formula (2):

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(1\right)$

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(2\right)$

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian;

ω 2 means the spin velocity of magnetron, unit: radian;

Ro1 means the revolution radius of magnetron, unit: millimeter;

Ro2 means the rotation radius of magnetron, unit: millimeter;

R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

The present invention has following beneficial effect:

Magnetron sputtering equipment provided by the invention, magnetron by the constant prerequisite of each position number of times of target under, the time that magnetron is stopped on the target unit surface equates, in the situation that the magnetron motion track is constant, control the movement velocity of magnetron, make magnetron in the place of track cross with speed motion faster, in the disjoint place of track, with slower speed, move, thereby the time that magnetron is stopped on the target unit surface equates, so that target is identical in the erosion rate at different positions place, and then the utilization ratio of raising target, this not only can reduce the running cost of magnetron sputtering equipment, and can reduce the time of changing target, thereby improve the rate of utilization of magnetron sputtering equipment.

Magnetron control method provided by the invention, magnetron by the constant prerequisite of each position number of times of target under, control the time that magnetron stops on the target unit surface, in the situation that the magnetron motion track is constant, control the movement velocity of magnetron, make magnetron in the place of track cross with speed motion faster, in the disjoint place of track, with slower speed, move, thereby making to control the time that magnetron stops on the target unit surface equates, so that target is identical in the erosion rate at different positions place, and then the utilization ratio of raising target.

The accompanying drawing explanation

The structure diagram that Fig. 1 is typical magnetron sputtering processing units;

Fig. 2 is the structure diagram of the driving mechanism for driving magnetron;

The structure diagram of the magnetron sputtering equipment that Fig. 3 provides for the embodiment of the present invention;

The structure iron that Fig. 4 is embodiment of the present invention driving mechanism;

The vertical view that Fig. 5 is embodiment of the present invention driving mechanism;

The trajectory diagram of magnetron when Fig. 6 is the operation of embodiment of the present invention driving mechanism driving magnetron;

The trajectory diagram of magnetron when Fig. 7 drives the magnetron operation for existing driving mechanism;

Fig. 8 is target erosion profile when embodiment of the present invention driving mechanism drives the magnetron operation;

Fig. 9 is target erosion profile when existing driving mechanism drives the magnetron operation;

The schema that Figure 10 is control device, driving mechanism in the present embodiment;

Figure 11 is the speed curves figure of servomotor within a period of motion;

Figure 12 is the magnetron operation movement velocity trajectory diagram of 5 seconds;

Figure 13 is another speed curves figure of servomotor within a period of motion.

Embodiment

For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, magnetron sputtering equipment provided by the invention and magnetron control method are described in detail.

The magnetron control method that the present embodiment provides is for improving the etching homogeneity of magnetron sputtering equipment target, this control method is according to the starting position of magnetron, determine the running period of magnetron, and according to the rotational velocity of controlling magnetron this running period and revolution speed, thereby magnetron by the constant prerequisite of each position number of times of target under, change the time that magnetron stops on the target unit surface.In other words, in the situation that the magnetron motion track is constant, control the movement velocity of magnetron, make magnetron in the place of its track cross with speed motion faster, in the disjoint place of track, with slower speed, move, thereby the time that magnetron is stopped on the target unit surface equates, and then improve the utilization ratio of target.

Because technical scheme of the present invention does not change the period of motion and the movement locus of magnetron in prior art, therefore, adopt following known variables in technical scheme of the present invention:

Magnetron revolution radius: ro1=115/25.4 unit: millimeter

Magnetron rotation radius: ro2=55/25.4 unit: millimeter

The revolution angular velocity omega 1 of magnetron (unit: radian) with spin velocity ω 2 (unit: radian) meet following relation: ω 2=-(55 * the 22) * ω 1/ (18 * 40) of magnetron.

And, meet following formula:

(1) the movement locus formula of magnetron:

X＝ro1×cos(ω1×t)+ro2cos(ω2×t)

Y＝ro1×sin(ω1×t)+ro2×sin(ω2×t)

In formula, X means the X-coordinate of magnetron central point; Y means the ordinate zou of magnetron central point; ω 1 means the revolution circular frequency of magnetron, unit: radian; ω 2 means the spin velocity of magnetron, unit: radian; Ro1 means the revolution radius of magnetron, unit: millimeter; Ro2 means the rotation radius of magnetron, unit: millimeter; T means the working time of magnetron, unit: second.

(2)X ²+Y ²＝R ²

In formula, X means the X-coordinate of magnetron central point; Y means the ordinate zou of magnetron central point; R means the radius of the physical location of magnetron central point apart from the movement locus center, and this value changes according to the actual motion position of magnetron.

Therefore, in technical scheme of the present invention, the revolution circular frequency of magnetron and spin velocity meet respectively formula 1. with formula 2.:

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}$ ①

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}$ ②

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian; ω 2 means the spin velocity of magnetron, unit: radian; Ro1 means the revolution radius of magnetron, unit: millimeter; Ro2 means the rotation radius of magnetron, unit: millimeter; R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

The magnetron control method that the present embodiment provides, magnetron by the constant prerequisite of each position number of times of target under, the time that magnetron is stopped on the target unit surface equates, thereby target is equated in the erosion rate at different positions place, and then improves the utilization ratio of target.Facts have proved, utilize magnetron control method provided by the invention to control the scanning of magnetron, the utilization ratio of target can be brought up to more than 60%.

The structure diagram of the magnetron sputtering equipment that Fig. 3 provides for the embodiment of the present invention.Refer to Fig. 3, magnetron sputtering equipment comprises reaction chamber 1, electrostatic chuck 2, target 3, magnetron 6, the driving mechanism 7 for driving magnetron 6 rotations and revolution, magnetron positioning unit 8 and control device 13, electrostatic chuck 2 is for carrying workpiece to be machined, and it is arranged on the bottom in reaction chamber 1.Target 3 is arranged on the top in reaction chamber 1, and target 3 is relative with the position of electrostatic chuck 2.Magnetron 6 is arranged on the top of target 3, in order to improve the sputter rate of target 3.Magnetron positioning unit 8 is for determining the starting position of described magnetron.Magnetron 6 is connected with driving mechanism 7, and the control end of driving mechanism 7 is connected with control device 13, and driving mechanism 7 drives the upper surface of magnetron 6 scanning targets 3 under the control of control device 13.

Also be provided with bracing frame 4 above target 3, bracing frame 4 is a closure member, and bracing frame and target 3 form a seal cavity, and magnetron 6 is arranged in the sealing space.Be full of deionized water in seal cavity, to reduce the temperature of magnetron 6 and target 3.

The structure iron that Fig. 4 is embodiment of the present invention driving mechanism.The vertical view that Fig. 5 is embodiment of the present invention driving mechanism.In Fig. 5, " A " means the minimum diameter of magnetron track while scan, and " B " means the maximum diameter of magnetron track while scan, and " C " means gear assembly end track while scan.

See also Fig. 3, Fig. 4 and Fig. 5, driving mechanism comprises motor 11, gear assembly, the first web plate 28 and the servo-driver 12 of controlling motor 11 rotating speeds.Motor 11 is connected with the input terminus of servo-driver 12, and control device 13 is connected with the output terminal of servo-driver 12, and servo-driver 12 can be controlled the rotating speed of motor 11 according to the control signal of control device 13.

Wherein, motor 11 is fixed on bracing frame 4.

In order to guarantee not change the period of motion and the movement locus of original magnetron, at first need to determine the starting position of magnetron, in the present invention, adopt the magnetron positioning unit to determine the starting position of magnetron, the i.e. initial point of magnetron motion track.

When magnetron positioning unit driving mechanism brings into operation, at first the magnetron positioning unit transfers to control device 13 by the magnetron zero position signal detected, so that control device can accurately obtain the position of magnetron 6, thereby control more accurately the rotating speed of motor 11.

In the present embodiment, gear assembly comprises that the first gear (not shown), the second gear 22, the 3rd gear 23 and the 4th gear 24, the first gears, the second gear 22, the 3rd gear 23 and the 4th gear 24 that arrange along the first web plate 28 length directions mesh successively and be connected with the first web plate 28 respectively.

The first web plate 28, the first gear are connected with the output shaft of motor 11, and magnetron 6 is connected with the central shaft of the 4th gear 24 farthest apart from motor output shaft by the second web plate 25.Under the driving of motor 11, the first gear, the second gear 22, the 3rd gear 23 and the 4th gear 24, respectively around central shaft rotation separately, revolve round the sun simultaneously under the drive of the first web plate 28 centered by the output shaft of motor 11.Under the drive of the first web plate 28 and the 4th gear 24, rotation centered by the central shaft of the 4th gear 24 when magnetron 6 revolves round the sun centered by the output shaft by motor 11.Therefore, by controlling the rotating speed of motor 11, can control revolution and the rotational velocity of magnetron 6.

In the present embodiment, magnetron 6 is arranged on an end of the second web plate 25, be provided with at the other end of the second web plate 25 the first counterweight 27 that the weight with magnetron is complementary, being equal in weight of the weight of the first counterweight 27 and magnetron 6, thereby can make the driving mechanism smooth running, improve the stability of magnetron 6 rotations, and then the work-ing life that can improve driving mechanism.

Further, gear assembly is partial to an end setting of the first web plate 28, at the other end of the first web plate 28, the weight of the second counterweight 26, the second counterweights 26 and the weight sum coupling of gear assembly, magnetron 6 and the first counterweight 27 is set.Can improve the stability of magnetron 6 revolution by the second counterweight 26, thereby make driving mechanism smooth running more, and then improve the work-ing life of driving mechanism.

In the present embodiment, the magnetron positioning unit is for determining the starting position of magnetron.The starting position that control device is definite according to the magnetron positioning unit, determine the running period of magnetron, and according to the rotational velocity of controlling driving mechanism this running period and revolution speed.Particularly, servo-driver is controlled the rotating speed of motor 11 according to the control signal of control device, thereby controls rotational velocity and the revolution speed of magnetron 6.Control device comprises that speed control subelement and movement locus control subelement, the speed control subelement make to drive the revolution circular frequency of magnetron 6 and spin velocity meet respectively formula 1. with formula 2.:

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}$ ①

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1}^2-{\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2}^2}{2\&times;\mathrm{<figure-callout\; id="1"\; label="ro"\; filenames="HDA00001646099900011.png,HDA00001646099900021.png"\; state="\{\{state\}\}">ro</figure-callout>}1\&times;\mathrm{<figure-callout\; id="2"\; label="ro"\; filenames="2012101526250100003DEST\_PATH\_IMAGE003.png,HDA00001646099900011.png"\; state="\{\{state\}\}">ro</figure-callout>}2\&times;(1-\frac{55\&times;22}{18\&times;40})}$ ②

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian; ω 2 means the spin velocity of magnetron, unit: radian; Ro1 means the revolution radius of magnetron, unit: millimeter; Ro2 means the rotation radius of magnetron, unit: millimeter; R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

The trajectory diagram of magnetron when Fig. 6 is the operation of embodiment of the present invention driving mechanism driving magnetron.The trajectory diagram of magnetron when Fig. 7 drives the magnetron operation for existing driving mechanism.In Fig. 6 and Fig. 7, the revolution radius r o1 of magnetron is 115/25.4, and the rotation radius r o2 of magnetron is 55/25.4, and be 5 seconds the sweep time of magnetron.Comparison diagram 6 and Fig. 7 can find out, the tracing point of embodiment of the present invention magnetron is more even, and the distribution density of tracing point is even.

Fig. 8 is target erosion profile when embodiment of the present invention driving mechanism drives the magnetron operation.Fig. 9 is target erosion profile when existing driving mechanism drives the magnetron operation.In Fig. 8 and Fig. 9, X-coordinate means the distance of target center to edge, unit: millimeter (mm); Ordinate zou means the degree of depth of target erosion, unit: millimeter (mm).Comparison diagram 8 and Fig. 9 can find out, when the present embodiment driving mechanism drives magnetron, the corrosion curve of target is more even.

In the present embodiment, driving mechanism also comprises recording the absolute value encoder (not shown) of the number of turns of the position of magnetron 6 and rotation and revolution, absolute value encoder is connected with servo-driver 12 and motor 11, absolute value encoder not only can record the number of turns of the current position of magnetron 6 and rotation and revolution according to the rotating cycle of motor 11, and the number of turns of the position of magnetron 6 and rotation and revolution is fed back to control device 13 by servo-driver 12, control device 13 records the number of turns of the current position of magnetron 6 and rotation and revolution.Like this when driving mechanism due to reasons such as power down when out of service, can record the position of magnetron 6 and the number of turns of rotation and revolution by absolute value encoder and control device 13, after re-powering, driving mechanism can make magnetron 6 continue operation according to the track before power down.

In the present embodiment, the magnetron positioning unit comprises signal emission element 14 and signal receiving part 15, and signal emission element 14 is for sending the magnetron signal for locating, and signal receiving part 15 is for receiving the magnetron signal for locating of sending from signal emission element 14.

As a kind of embodiment, because consider and check that environment is in water, and magnetron revolves round the sun and adds the selection of rotation, so the present invention adopts magnetic proximity sensor to position.As shown in Figure 3, signal emission element 14 is fixed on magnetron 6, at magnetron 6, arrives place, the outer of movement locus, and signal receiving part 15 and relative with the setting position of signal emission element 14 is installed on bracing frame 4 above it; When magnetron 6 moves to signal receiving part 15 below, signal receiving part 15 receives signal, now as the initial point of magnetron motion track.Perhaps, signal emission element 14 is fixed on bracing frame 4, signal receiving part 15 is fixed on magnetron 6 and is relative with the setting position of signal emission element 14.When signal receiving part 15 receives the magnetron signal for locating that signal emission element 14 sends, by the starting point that now location positioning at magnetron 6 places is the magnetron motion track.

In the present embodiment, signal emission element 14 is magnet, and signal receiving part 15 is the Hall switch integrated sensor.In order to improve the precision of magnetron positioning unit, when the magnetic field of the switching curve of guaranteeing the Hall switch integrated sensor and magnet is crossing, also to reduce the intersecting area in the magnetic field of magnet and Hall switch integrated sensor as far as possible.

Servomotor of the present invention is to control its speed to turn by PLC, and Figure 11 is the speed curves figure of servomotor within a period of motion.Because need to guarantee that in 1 second, public affairs turn around, in public affairs turn around, the rotation speed change of servomotor.Figure 12 is the magnetron operation movement velocity trajectory diagram of 5 seconds, as shown in figure 12, magnetron moves magnetron after 5 seconds and gets back to again position that speed is identical (from Figure 12, although the starting point of magnetron motion speed and terminal do not overlap fully, but starting point and terminal all are positioned at the extension of movement velocity track, the movement velocity that is magnetron is identical), after 5 seconds, the movement velocity track of magnetron be take 5 seconds as the cycle but is not limited to 5 seconds, take the magnetron motion track as repeating motion can be the period of motion, just take in this example 5 seconds as example.In order to determine the servomotor position of rotation, absolute value encoder is installed on servomotor, the effect of absolute encoder is exactly record position and the number of turns of rotation is finally passed to PLC, be stored in the power down conservation zone in PLC, and the data of absolute value encoder record itself also will keep after power down, so even system runs into unexpected power down, after re-powering, PLC still can guarantee that the track before magnetron is according to power down continues motion.

As another embodiment, signal emission element 14 is arranged on the magnetron counterweight, on the counterweight in Fig. 46, magnet is installed, be positioned at top, the outer of counterweight track signal receiving part 15 is installed, due to counterweight 6 and magnetron 27 in moving process all the time on the same straight line, so, when counterweight 6 arrives outer, signal receiving part 15 has signal, now magnetron 27 is in the position nearest from the target center of circle.In order to ensure precision, the magnetic field of the switching curve of signal receiving part 15 and signal emission element 14 is intersected area and is reduced as far as possible.Identical with example one with the control unit adopted in the sample example and control method, as Figure 10, but due to magnetron initial point signal now be magnetron from the target center of circle the most nearby, magnetron motion is setting in motion from here, so corresponding motor speed is controlled curve, also just according to Figure 13, moves.On the gear shaft connected at servomotor, absolute value encoder is installed, the position that is used for recording servomotor also prevents that power down from losing magnetron position simultaneously.With take 5 seconds in the sample example as the cycle, but be not limited to 5 seconds, but the principle of selection cycle or take the magnetron motion track as repeating motion be foundation.

The schema that Figure 10 is control device, driving mechanism in the present embodiment.Refer to Figure 10, the control signal that control device 13 will be controlled motor 11 transfers to servo-driver 12, control motor 11 operations by servo-driver 12, motor 11 drive gear assemblies and the first web plate 28 rotate centered by the output shaft of motor 11, and then drive the surface of magnetron 6 scanning targets 3.Simultaneously, the encoder feedback signal transmission that absolute value encoder will include the number of turns of the current position of magnetron 6 and rotation and revolution transfers to control device by servo-driver 12, and control device records the position of current magnetron 6 and the number of turns of rotation and revolution.

The present embodiment control device controls by speed control subelement and movement locus running orbit and the travelling speed that subelement is controlled magnetron, so that the residence time of magnetron on the target material surface unit surface equates, thereby make target unanimous on the whole in the erosion rate at different positions place, the utilization ratio through measuring known target is more than 60%.

It should be noted that, in the present embodiment, gear assembly comprises four gears, but the present invention does not limit to therewith.Gear assembly can comprise n gear, and wherein, n is more than or equal to 2 integer.N gear is fixed on the first web plate 28 and engagement successively, and a gear of outermost in gear assembly (end) is connected with the output shaft of motor 11, and magnetron 6 is fixed on the central shaft apart from the output shaft gear farthest of motor 11.Under the driving of motor 11, magnetron 6 revolves round the sun centered by the output shaft of motor, and the rotation centered by the central shaft of gear farthest by the distance motor output shaft.Therefore, can control the speed of magnetron 6 revolution and rotation by the rotating speed of controlling motor 11.

The magnetron sputtering equipment that the present embodiment provides, magnetron by the constant prerequisite of each position number of times of target under, the time that magnetron is stopped on the target unit surface equates, in the situation that the magnetron motion track is constant, control the movement velocity of magnetron, make magnetron in the place of track cross with speed motion faster, in the disjoint place of track, with slower speed, move, thereby the time that magnetron is stopped on the target unit surface equates, so that target is identical in the erosion rate at different positions place, and then the utilization ratio of raising target, this not only can reduce the running cost of magnetron sputtering equipment, and can reduce the time of changing target, thereby improve the rate of utilization of magnetron sputtering equipment.

Be understandable that, above embodiment is only the illustrative embodiments adopted for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.

Claims (11)

1. a magnetron sputtering equipment, comprise reaction chamber, target, magnetron, drive the driving mechanism of described magnetron rotation and revolution, described target is arranged on the top of described reaction chamber, described magnetron is arranged on the top of described target, under the driving of described driving mechanism, described magnetron scans the surface of described target, described driving mechanism is connected with described control device, and control rotational velocity and the revolution speed of described magnetron according to the control signal of described control device, it is characterized in that, described magnetron sputtering equipment, also comprise: magnetron positioning unit and control device, wherein:

Described magnetron positioning unit, for determining the starting position of described magnetron;

Described control device, be used for according to described starting position, determine the running period of magnetron, and according to the rotational velocity of controlling described driving mechanism described running period and revolution speed, thereby described magnetron by the constant prerequisite of each position number of times of target under, control the time that described magnetron stops on described target unit surface, make described magnetron shorten in the residence time in the target zone of frequent process, extend the residence time in the target zone sparse at movement locus, to improve the etching homogeneity of target simultaneously.

2. magnetron sputtering equipment according to claim 1, it is characterized in that, described control device comprises the speed control subelement, and described speed control subelement makes the revolution circular frequency of described magnetron and spin velocity meet respectively formula (1) and formula (2):

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{ro}1}^2-{\mathrm{ro}2}^2}{2\&times;\mathrm{ro}1\&times;\mathrm{ro}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(1\right)$

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{ro}1}^2-{\mathrm{ro}2}^2}{2\&times;\mathrm{ro}1\&times;\mathrm{ro}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(2\right)$

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian;

ω 2 means the spin velocity of magnetron, unit: radian;

Ro1 means the revolution radius of magnetron, unit: millimeter;

Ro2 means the rotation radius of magnetron, unit: millimeter;

R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

3. magnetron sputtering equipment according to claim 2, is characterized in that, described driving mechanism comprises motor, gear assembly, the first web plate and the servo-driver of controlling described motor speed, wherein:

Upper surface at described target is provided with bracing frame, and described motor is fixed in support frame as described above;

Described gear assembly comprises n the gear meshed successively along described the first web plate length direction, and wherein n is greater than 2 integer, and a described n gear is fixed on described the first web plate;

Be positioned at outermost gear in described the first web plate and described gear assembly and be connected with the output shaft of described motor, described magnetron is connected with the central shaft of the output shaft gear farthest of the described motor of distance;

Under the driving of described motor, described the first web plate drives described gear assembly and described magnetron revolves round the sun centered by the output shaft of described motor, simultaneously, and the rotation centered by the central shaft of the described motor output shaft of distance gear farthest of described magnetron;

Described servo-driver is controlled the rotating speed of motor according to the control signal of described control device, thereby controls rotational velocity and the revolution speed of described magnetron.

4. magnetron sputtering equipment according to claim 3, is characterized in that, described gear assembly comprises the first gear, the second gear, the 3rd gear and the 4th gear of engagement successively, wherein,

Described the first gear is connected with the output shaft of described motor,

Described magnetron is connected with the central shaft of described the 4th gear by the second web plate.

5. magnetron sputtering equipment according to claim 3, it is characterized in that, described magnetron is fixed on an end of described the second web plate, is provided with at the other end of described the second web plate the first counterweight that the weight with described magnetron is complementary, in order to improve the stability of described magnetron rotation.

6. magnetron sputtering equipment according to claim 5, it is characterized in that, described gear assembly is partial to an end setting of described the first web plate, be provided with at the other end of described the first web plate the second counterweight that the weight sum with described gear assembly, described magnetron and described the first counterweight is complementary, in order to improve the stability of described magnetron revolution.

7. magnetron sputtering equipment according to claim 3, it is characterized in that, described driving mechanism comprises absolute value encoder, described absolute value encoder is connected with described servo-driver and described motor, in order to the position of recording described magnetron and the number of turns of rotation and revolution, and the number of turns of the position of described magnetron and rotation and revolution is fed back to described control device by described servo-driver.

8. magnetron sputtering equipment according to claim 2, it is characterized in that, described magnetron positioning unit comprises signal emission element and signal receiving part, described signal emission element is for sending the magnetron signal for locating, and described signal receiving part is for receiving the magnetron signal for locating of sending from described signal emission element; Wherein:

Described signal emission element is fixed on described magnetron, and described signal receiving part is fixed on support frame as described above and is relative with the setting position of described signal emission element; Perhaps, described signal emission element is fixed on support frame as described above, and described signal receiving part is fixed on described magnetron and is relative with the setting position of described signal emission element.

9. magnetron sputtering equipment according to claim 8, is characterized in that, described sensor signal emission element is magnet, and described sensor signal receiving-member is the Hall switch integrated sensor.

10. a magnetron control method, for improving the etching homogeneity of magnetron sputtering equipment target, it is characterized in that, starting position according to described magnetron, determine the running period of magnetron, and according to the rotational velocity of controlling magnetron described running period and revolution speed, thereby described magnetron by the constant prerequisite of each position number of times of target under, change the time that described magnetron stops on described target unit surface, make described magnetron shorten in the residence time in the target zone of frequent process, extend the residence time in the target zone sparse at movement locus simultaneously, to improve the etching homogeneity of target.

11. magnetron control method according to claim 10, is characterized in that, the revolution circular frequency of described magnetron and spin velocity meet respectively formula (1) and formula (2):

$\mathrm{\&omega;}1=\arccos \frac{R^2-{\mathrm{ro}1}^2-{\mathrm{ro}2}^2}{2\&times;\mathrm{ro}1\&times;\mathrm{ro}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(1\right)$

$\mathrm{\&omega;}2=-\frac{55\&times;22}{18\&times;40}\arccos \frac{R^2-{\mathrm{ro}1}^2-{\mathrm{ro}2}^2}{2\&times;\mathrm{ro}1\&times;\mathrm{ro}2\&times;(1-\frac{55\&times;22}{18\&times;40})}---\left(2\right)$

In formula, ω 1 means the revolution circular frequency of magnetron, unit: radian;

ω 2 means the spin velocity of magnetron, unit: radian;

Ro1 means the revolution radius of magnetron, unit: millimeter;

Ro2 means the rotation radius of magnetron, unit: millimeter;

R means the distance between the center of magnetron center and magnetron motion track, unit: millimeter.

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