CN110618167B - pH value detection device, preparation method thereof and pH value detection method - Google Patents
pH value detection device, preparation method thereof and pH value detection method Download PDFInfo
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- CN110618167B CN110618167B CN201910900509.4A CN201910900509A CN110618167B CN 110618167 B CN110618167 B CN 110618167B CN 201910900509 A CN201910900509 A CN 201910900509A CN 110618167 B CN110618167 B CN 110618167B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Abstract
The embodiment of the invention discloses a pH value detection device, a preparation method thereof and a pH value detection method, wherein the pH value detection device comprises a substrate and a plurality of pH sensors positioned on one side of the substrate; the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, wherein the first type pH sensors and the second type pH sensors have different pH value detection sensitivities. By adopting the technical scheme, the pH value detection device at least comprises the first type of pH sensor and the second type of pH sensor with different pH value detection sensitivities, different detection signals based on the solution to be detected are obtained through the first type of pH sensor and the second type of pH sensor respectively, the final detection signal of the pH value detection device is determined according to a plurality of different detection signals, the pH value of the solution to be detected is determined according to the final detection signal, the pH value detection accuracy and sensitivity are higher, and the pH value detection device provided by the embodiment of the invention is different from the traditional electrode detection device, and is small in size and high in stability.
Description
Technical Field
The embodiment of the invention relates to the technical field of pH detection, in particular to a pH value detection device, a preparation method thereof and a pH value detection method.
Background
Most of the pH sensors in the current market adopt traditional electrode detection modules, and the pH sensors are large in size, complex in structure, low in accuracy and sensitivity and poor in stability. The application number 201380069949.0 is that the pH value of the solution is determined through the luminous intensity, so that the accuracy cannot be guaranteed, and the data processing is complicated; although the application No. 201510003932.6 adopts a differential method to measure the potential of the solution to be measured, the built-in solution in the traditional electrode is still reserved, the service life of the electrode cannot be ensured, and the stability and the accuracy are difficult to ensure.
Disclosure of Invention
In view of this, embodiments of the present invention provide a pH detection device, a manufacturing method thereof, and a pH detection method, so as to improve accuracy and sensitivity of the pH detection device, and ensure that the pH detection device has a smaller volume and good stability.
In a first aspect, an embodiment of the present invention provides a pH detection apparatus, including a substrate and a plurality of pH sensors located on one side of the substrate;
the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, wherein the first type pH sensors and the second type pH sensors have different pH value detection sensitivities.
Optionally, a plurality of the first type pH sensors are arranged in an array on one side of the substrate, and a plurality of the second type pH sensors are arranged in an array on one side of the substrate;
the first type of pH sensor and the second type of pH sensor are sequentially arranged at intervals in a circulating manner; or the plurality of first type pH sensors are sequentially arranged at intervals, and the plurality of second type pH sensors are sequentially arranged at intervals.
Optionally, the first type of pH sensor and the second type of pH sensor are both complementary metal oxide semiconductor sensors;
the first type of pH sensor comprises:
the first source electrode, the first grid electrode and the first drain electrode are positioned on one side of the substrate, and the first grid electrode corresponds to a first channel region between the first source electrode and the first drain electrode;
the first insulating layers are arranged between the first conducting layers and the first grid electrode and between two adjacent first conducting layers;
a first pH detection layer on the first conductive layer on a side away from the substrate;
the second type of pH sensor comprises:
the second source electrode, the second grid electrode and the second drain electrode are positioned on one side of the substrate, and the second grid electrode corresponds to a second channel region between the second source electrode and the second drain electrode;
the second insulating layers are arranged between the second conducting layers and the second grid electrode and between two adjacent second conducting layers;
a first pH value detection layer positioned on the second conductive layer at one side far away from the substrate;
a second pH detecting layer on the first pH detecting layer.
Optionally, the first pH detection layer includes an inert metal layer, and the second pH detection layer includes a pH sensitive film.
Optionally, the first source electrode, the first drain electrode, the second source electrode and the second drain electrode are disposed in the same layer;
the first grid and the second grid are arranged on the same layer;
the first conducting layer and the second conducting layer are arranged on the same layer;
the first insulating layer and the second insulating layer are arranged on the same layer.
Optionally, at least a part of the first insulating layer is formed with a first through hole, and two adjacent first conductive layers are electrically connected through the first through hole;
at least part of the second insulating layer is provided with a second through hole, and two adjacent layers of the second conducting layers are electrically connected through the second through holes.
Optionally, the pH detection apparatus further includes a detection circuit, and the detection circuit is connected to the first type of pH sensor and the second type of pH sensor respectively, and is configured to read a first pH detection signal of the first type of pH sensor and a second pH detection signal of the second type of pH sensor.
Optionally, the pH detection range of the pH detection device is 6.5 to 11.
In a second aspect, an embodiment of the present invention further provides a method for manufacturing a pH detection device, where the method for manufacturing a pH detection device is used to manufacture the pH detection device, and the method for manufacturing a pH detection device includes:
providing a substrate;
preparing a plurality of pH sensors on one side of the substrate, wherein the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, and the first type pH sensors and the second type pH sensors have different pH value detection sensitivities.
Optionally, the first type of pH sensor and the second type of pH sensor are both complementary metal oxide semiconductor sensors;
preparing a plurality of pH sensors on one side of the substrate, wherein the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, and the method comprises the following steps:
preparing a plurality of complementary metal oxide semiconductor structures on one side of the substrate according to the preparation process of the complementary metal oxide semiconductor structures;
preparing a first pH value detection layer on one side of the plurality of complementary metal oxide semiconductor structures far away from the substrate;
and preparing a second pH value detection layer on one side of part of the first pH value detection layer, which is far away from the substrate, so as to obtain a first type of pH sensor exposing the first pH value detection layer and a second type of pH sensor exposing the second pH value detection layer.
In a third aspect, an embodiment of the present invention further provides a pH value detection method, where the pH value detection method is implemented by using the above pH value detection apparatus, and the pH value detection method includes:
injecting the solution to be detected into the pH value detection device;
acquiring detection signals of the pH value detection device based on a peripheral detection circuit, wherein the detection signals at least comprise first pH detection signals of the first type of pH sensor and second pH detection signals of the second type of pH sensor;
and determining the pH value of the solution to be detected according to the detection signal.
Optionally, determining the pH value of the solution to be detected according to the detection signal includes:
determining a mean difference and/or a peak difference of the detection signals from the first pH detection signal and the second pH detection signal;
and determining the pH value of the solution to be detected by a method of looking up a table or introducing the table into a fitting formula according to the average value difference and/or the peak value difference of the detection signals.
According to the pH value detection device, the preparation method thereof and the pH value detection method provided by the embodiment of the invention, the pH value detection device comprises at least two pH sensors of different types, and can be understood as a two-phase or multi-phase pH value detection device, the pH value of a solution to be detected can be determined based on the same solution to be detected or two or more detection signals, and the statistical result of the two or more detection signals, so that the pH value detection accuracy and sensitivity are high; the pH value detection device provided by the embodiment of the invention is different from the traditional electrode detection device, and has the beneficial effects of small volume and high stability.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments made with reference to the following drawings:
fig. 1 is a schematic top view of a pH detection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the pH detecting device shown in FIG. 1 along the section line A-A';
FIG. 3 is a schematic top view of another pH value detecting apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of the pH detecting device of FIG. 1 along the section line A-A';
FIG. 5 is a schematic flow chart of a method for manufacturing a pH detection device according to an embodiment of the present invention;
FIG. 6 is a schematic flow chart of another method for manufacturing a pH detection device according to an embodiment of the present invention;
FIGS. 7-9 are process flow diagrams of a method of making the pH sensing device provided in FIG. 6;
FIG. 10 is a schematic flow chart of a pH detection method according to an embodiment of the present invention;
FIG. 11 is a schematic flow chart of another method for measuring pH according to an embodiment of the present invention;
FIG. 12 is an analysis histogram of a detected signal provided by an embodiment of the present invention;
FIG. 13 is a diagram illustrating a mean-difference linear analysis of a detected signal according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a linear analysis of peak difference of detection signals according to an embodiment of the present invention
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be fully described by the detailed description with reference to the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are a part of the embodiments of the present invention, not all embodiments, and all other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without inventive efforts fall within the scope of the present invention.
FIG. 1 is a schematic top view of a pH detecting device according to an embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of the pH detecting device shown in FIG. 1 along a sectional line A-A'; as shown in fig. 1 and 2, the pH detecting apparatus according to the embodiment of the present invention includes a substrate 10 and a plurality of pH sensors 20 disposed on one side of the substrate 10; the plurality of pH sensors 20 include at least a plurality of first type pH sensors 21 and a plurality of second type pH sensors 22, wherein the first type pH sensors 21 and the second type pH sensors 22 have different pH detection sensitivities.
Illustratively, as shown in fig. 1 and 2, the plurality of pH sensors 20 at least include a plurality of first-type pH sensors 21 and a plurality of second-type pH sensors 22, and fig. 1 and 2 are only described by taking the example that the plurality of pH sensors 20 include a plurality of first-type pH sensors 21 and a plurality of second-type pH sensors 22 at the same time. The first type of pH sensor 21 and the second type of pH sensor 22 are set to have different pH detection sensitivities, so that after a solution to be detected is injected into the pH detection device provided by the embodiment of the present invention, the first type of pH sensor 21 and the second type of pH sensor 22 can generate different detection signals for the same solution to be detected, a final detection signal of the pH detection device is determined according to a plurality of different detection signals, and the pH value of the solution to be detected can be directly obtained by looking up a table or by being brought into a pH value fitting formula which is obtained in advance based on the obtained final detection signal. The pH value detection device provided by the embodiment of the invention comprises at least two different types of pH sensors, can be understood as a two-phase or multi-phase pH value detection device, can determine the pH value of a solution to be detected based on the same solution to be detected or two or more detection signals and based on the statistical result of the two or more detection signals, and has high pH value detection accuracy and sensitivity.
Meanwhile, as shown in fig. 1 and fig. 2, the pH detection device provided by the embodiment of the invention has the advantages of small volume, simple structure, good portability, convenient pH detection and strong operability compared with the electrode detection module in the prior art; meanwhile, a built-in solution is not needed, the instability caused by the service life of the electrode and the built-in solution can be eliminated, and the stability and the reliability of the pH value detection device are improved.
It should be noted that, in the embodiment of the present invention, only the example that the pH detection device includes the first type pH sensor 21 and the second type pH sensors 22, and the first type pH sensor 21 and the second type pH sensor 22 have different pH detection sensitivities is taken as an example for description, it can be understood that the pH detection device provided in the embodiment of the present invention may further include other pH sensors, for example, a third type pH sensor, and the pH detection device obtains different detection signals based on the same solution to be detected by setting the plurality of different types of pH sensors to have different pH detection sensitivities, and obtains the pH value of the solution to be detected according to the plurality of different detection signals, so as to ensure that the pH detection has greater accuracy and sensitivity.
Optionally, the number of the first type pH sensor 21 and the number of the second type pH sensors 22 may be the same or different, which is not limited in this embodiment of the present invention, and fig. 1 only illustrates that the number of the first type pH sensor 21 and the number of the second type pH sensors 22 are the same.
Optionally, the substrate 10 provided in the embodiment of the present invention may be a silicon substrate, or may also be a substrate made of other materials, which is not limited in the embodiment of the present invention.
To sum up, the pH detection device provided by the embodiment of the present invention at least includes the first type of pH sensor and the second type of pH sensor with different pH detection sensitivities, obtains the detection signal based on the solution to be detected through the first type of pH sensor and the second type of pH sensor, and determines the pH value of the solution to be detected by looking up the table or introducing the table into a fitting formula according to the detection signal.
Optionally, the present invention may further include a detection circuit (not shown in the figure), where the detection circuit is connected to the first type pH sensor 21 and the second type pH sensor 22, and is configured to read a first pH detection signal of the first type pH sensor 21 and a second pH detection signal of the second type pH sensor 22, so as to determine the pH value of the solution to be detected according to the first pH detection signal and the second pH detection signal.
Optionally, the pH detection device provided by the embodiment of the invention can be used for detecting the pH of a solution to be detected with a pH range of 6.5-11, and has a wide pH detection range, so that the pH detection device provided by the embodiment of the invention has a wide application range and good universality.
Optionally, fig. 3 is a schematic top view of another pH detection apparatus provided in an embodiment of the present invention, and referring to fig. 1 and fig. 3, in the pH detection apparatus provided in the embodiment of the present invention, a plurality of first-type pH sensors 21 are arranged in an array on one side of a substrate 10, and a plurality of second-type pH sensors 22 are arranged in an array on one side of the substrate 10; the first type of pH sensor 21 and the second type of pH sensor 22 are sequentially arranged at intervals in a circulating manner (as shown in fig. 3); alternatively, the plurality of first-type pH sensors 21 are sequentially arranged at intervals, and the plurality of second-type pH sensors 22 are sequentially arranged at intervals (as shown in fig. 1).
For example, as shown in fig. 3, the first type of pH sensor 21 and the second type of pH sensor 22 are arranged in a cycle at intervals in sequence, and the pH values of the solutions in which the first type of pH sensor 21 and the second type of pH sensor 22 are arranged adjacently are the same or almost the same, so as to ensure high accuracy and sensitivity of pH value detection; as shown in fig. 1, a plurality of first-type pH sensors 21 are arranged at intervals in sequence, and a plurality of second-type pH sensors 22 are arranged at intervals in sequence, so that the plurality of first-type pH sensors 21 can be prepared at the same time, the plurality of second-type pH sensors 22 can be prepared at the same time, and the preparation process of the pH value detection device is simple. The embodiment of the present invention does not limit the position relationship between the first type pH sensor 21 and the second type pH sensor 22 in the pH value detection device, and the position relationship between the first type pH sensor 21 and the second type pH sensor 22 may be adjusted according to specific requirements, for example, when the pH value detection accuracy and sensitivity are required to be high, the first type pH sensor 21 and the second type pH sensor 22 may be arranged in a cycle at intervals in sequence; when the preparation process of the pH detection device is required to be simple and a large amount of production is required, a plurality of first pH sensors 21 may be arranged at intervals in sequence, and a plurality of second pH sensors 22 may be arranged at intervals in sequence.
It should be noted that fig. 1 and fig. 3 only illustrate two possible positional relationships between the first type pH sensor 21 and the second type pH sensor 22, but the positional relationship between the first type pH sensor 21 and the second type pH sensor 22 is not limited, and other positional relationships between the first type pH sensor 21 and the second type pH sensor 22 are also within the scope of the embodiments of the present invention.
Optionally, with continued reference to fig. 2, the first type of pH sensor 21 and the second type of pH sensor 22 provided in the embodiment of the present invention are both Complementary Metal Oxide Semiconductor (CMOS) sensors. Specifically, the first-type pH sensor 21 may include a first source electrode 212, a first gate electrode 214, and a first drain electrode 213 on one side of the substrate 10, the first gate electrode 214 corresponding to a first channel region 215 between the first source electrode 212 and the first drain electrode 213; a plurality of first conductive layers 216 are positioned on one side of the first gate 214 far away from the substrate 10, and first insulating layers 217 are arranged between the first conductive layers 216 and the first gate 214 and between two adjacent first conductive layers 216; a first pH detection layer 218 on the first conductive layer 216 on a side away from the substrate 10; the second type of pH sensor may include a second source electrode 222, a second gate electrode 224, and a second drain electrode 223 on one side of the substrate 10, the second gate electrode 224 corresponding to a second channel region 225 between the second source electrode 222 and the second drain electrode 223; a plurality of second conductive layers 226 positioned on the side of the second gate 224 away from the substrate 10, wherein a second insulating layer 227 is arranged between the second conductive layer 226 and the second gate 224 and between two adjacent second conductive layers 226; a first pH detection layer 218 on a second conductive layer 226 on a side remote from the substrate 10; a second pH sensing layer 228 disposed on the first pH sensing layer 218.
Illustratively, the first type of pH sensor 21 and the second type of pH sensor 22 are both CMOS sensors, which ensures that the first type of pH sensor 21 and the second type of pH sensor 22 have many advantages of low power consumption, high speed, strong anti-interference capability, high integration level, and the like, and ensures that the pH detection device has a good pH detection effect. Based on the basic structure of the CMOS sensor, the first-type pH sensor 21 may include a first source electrode 212, a first drain electrode 213, and a first gate electrode 214, and at least one set of stacked structures in which a first insulating layer 217 and a first conductive layer 216 are sequentially stacked, and a first pH detection layer 218 is disposed on the first conductive layer 216 farthest from the substrate 10 and thus, the first pH detection layer 218 may generate a first detection signal based on a solution to be detected. The second type of pH sensor 22 may include a second source electrode 222, a second drain electrode 223, and a second gate electrode 224, and at least one set of stacked structures sequentially stacked by a second insulating layer 227 and a second conductive layer 226, wherein the second conductive layer 226 farthest from the substrate 10 is sequentially disposed with a first pH detecting layer 218 and a second pH detecting layer 228, and the second pH detecting layer 228 may generate a second detection signal based on the solution to be detected.
It should be noted that, in the embodiment of the present invention, the number of the stacked structures in which the first insulating layer 217 and the first conductive layer 216 are sequentially stacked and included in the first type pH sensor 21 is not limited, and it is necessary to determine the number of the peripheral circuits connected to the first type pH sensor 21, and fig. 2 illustrates an example in which the first type pH sensor 21 includes 5 stacked structures in which the first insulating layer 217 and the first conductive layer 216 are sequentially stacked and included. When the number of peripheral circuits connected to the first type pH sensor 21 is large, the first type pH sensor 21 may be provided to include a large number of stacked structures in which the first insulating layer 217 and the first conductive layer 216 are sequentially stacked, wherein the number of peripheral circuits connected to the first type pH sensor 21 may be the same as the number of the first conductive layer 216. Similarly, in the embodiment of the present invention, the number of the stacked structures in which the second insulating layer 227 and the second conductive layer 226 are sequentially stacked and provided in the second type pH sensor 22 is not limited, but is determined according to the number of peripheral circuits connected to the second type pH sensor 22, and fig. 2 will be described by taking as an example only the case where the second type pH sensor 22 includes 5 stacked structures in which the second insulating layer 227 and the second conductive layer 226 are sequentially stacked and provided. When the number of peripheral circuits connected to the second type pH sensor 22 is large, the second type pH sensor 22 may be configured to include a large number of stacked structures in which the second insulating layer 227 and the second conductive layer 226 are sequentially stacked, wherein the number of peripheral circuits connected to the second type pH sensor 22 may be the same as the number of the second conductive layer 226.
Specifically, the first pH detection layer 218 may include an inert metal layer, such as gold, silver, or platinum, and the first pH detection layer 218 is less sensitive to pH; the second pH detecting layer 228 may include a pH sensitive film, and the second pH detecting layer 228 is more sensitive to pH. Based on the same solution to be detected, the first pH detection layer 218 and the second pH detection layer 228 may generate different detection signals, and based on the obtained detection signals, the pH value of the solution to be detected may be directly obtained by looking up a table or bringing the table into a pH value fitting formula that is obtained in advance, and the pH value detection accuracy and sensitivity are high. It should be noted that, in the embodiment of the present invention, the materials of the first pH detecting layer 218 and the second pH detecting layer 228 are not limited, and only the pH detecting layer 218 and the second pH detecting layer 228 have different pH sensitivities.
Alternatively, as shown in fig. 2, the first source electrode 212, the first drain electrode 213, the second source electrode 222 and the second drain electrode 223 may be disposed in the same layer; the first gate 214 and the second gate 224 may be disposed at the same layer; the first conductive layer 216 and the second conductive layer 226 may be disposed in the same layer; the first insulating layer 217 and the second insulating layer 227 may be provided in the same layer.
For example, the first source electrode 212, the first drain electrode 213, the second source electrode 222 and the second drain electrode 223 are arranged on the same layer, and the first source electrode 212, the first drain electrode 213, the second source electrode 222 and the second drain electrode 223 can be prepared from the same material in the same process, so that the first source electrode 212, the first drain electrode 213, the second source electrode 222 and the second drain electrode 223 are simple in preparation process, and the film layer relationship of the pH detection device is simple; the first grid 214 and the second grid 224 are arranged on the same layer, and the first grid 214 and the second grid 224 can be prepared from the same material in the same process, so that the first grid 214 and the second grid 224 are simple in preparation process, and the film relation of the pH value detection device is simple; the first conductive layer 216 and the second conductive layer 226 can be arranged on the same layer, and the first conductive layer 216 and the second conductive layer 226 can be prepared from the same material in the same process, so that the preparation process of the first conductive layer 216 and the second conductive layer 226 is simple, and the film layer relationship of the pH value detection device is simple; the first insulating layer 217 and the second insulating layer 227 are arranged on the same layer, and the first insulating layer 217 and the second insulating layer 227 can be prepared from the same material in the same process, so that the preparation processes of the first insulating layer 217 and the second insulating layer 227 are simple, and the film relation of the pH value detection device is simple.
Alternatively, fig. 4 is a schematic cross-sectional view of the pH detecting apparatus provided in fig. 1 along a sectional line a-a', as shown in fig. 4, a first through hole 219 is formed in at least a portion of the first insulating layer 217, and two adjacent first conductive layers 216 are electrically connected through the first through hole 219; a second through hole 229 is formed in at least a part of the second insulating layer 227, and two adjacent second conductive layers 226 are electrically connected through the second through hole 229.
Exemplarily, as shown in fig. 4, in the pH detection apparatus provided in the embodiment of the present invention, at least a portion of the first insulating layer 217 may have a first through hole 219 formed therein, and the first through hole 219 may enable electrical connection between two adjacent first conductive layers 216, so as to implement signal transmission; similarly, a second through hole 229 may be formed in at least a portion of the second insulating layer 227, and an electrical connection between two adjacent second conductive layers 226 may be achieved through the second through hole 229, so as to achieve signal transmission. It should be noted that, in the embodiment of the present invention, it is not limited to which of the first insulating layers 217 the first via 219 is formed and which of the second insulating layers 227 the second via 229 is formed, and it is necessary to determine according to actual circumstances, and fig. 4 illustrates an example in which all of the first insulating layers 217 are formed with the first via 219 and all of the second insulating layers 227 are formed with the second via 229.
Based on the same inventive concept, the embodiment of the invention also provides a preparation method of the pH value detection device, which is used for preparing the pH value detection device provided by the embodiment of the invention. Specifically, fig. 5 is a schematic flow chart of a method for manufacturing a pH detection device according to an embodiment of the present invention, and as shown in fig. 5, the method for manufacturing a pH detection device according to an embodiment of the present invention may include:
and S110, providing a substrate.
Optionally, the substrate may be a silicon substrate, or may also be a substrate made of other materials, which is not limited in the embodiment of the present invention.
S120, preparing a plurality of pH sensors on one side of the substrate, wherein the plurality of pH sensors at least comprise a plurality of first pH sensors and a plurality of second pH sensors, and the first pH sensors and the second pH sensors have different pH value detection sensitivities.
Optionally, a plurality of pH sensors are prepared on one side of the substrate, the plurality of pH sensors at least include a plurality of first-type pH sensors and a plurality of second-type pH sensors, and the first-type pH sensors 21 and the second-type pH sensors 22 have different pH detection sensitivities, so that after the solution to be detected is injected into the pH detection apparatus provided by the embodiment of the present invention, the first-type pH sensors 21 and the second-type pH sensors 22 may generate different detection signals for the same solution to be detected, the pH value of the solution to be detected may be directly obtained by looking up a table or by bringing the obtained detection signals into a pH value fitting formula that is obtained in advance, and the pH value detection accuracy and sensitivity are high.
Meanwhile, the pH value detection device prepared by the preparation method of the pH value detection device provided by the embodiment of the invention has the advantages of small volume, simple structure, good portability, convenient pH value detection and strong operability compared with the electrode detection module in the prior art; meanwhile, a built-in solution is not needed, the instability caused by the service life of the electrode and the built-in solution can be eliminated, and the stability and the reliability of the pH value detection device are improved.
To sum up, according to the method for manufacturing the pH detection device provided by the embodiment of the present invention, the pH detection device at least includes the first type of pH sensor and the second type of pH sensor having different pH detection sensitivities, the detection signals based on the solution to be detected are obtained by the first type of pH sensor and the second type of pH sensor, respectively, and the pH value of the solution to be detected is determined by looking up the table or introducing the table into a fitting formula according to the detection signals, so that the pH detection accuracy and sensitivity are high.
Further, the first type of pH sensor 21 and the second type of pH sensor 22 provided in the embodiment of the present invention are both CMOS sensors, and based on this, another method for manufacturing a pH detection device is provided in the embodiment of the present invention, as shown in fig. 6, the method for manufacturing a pH detection device provided in the embodiment of the present invention may include:
s210, providing a substrate.
S220, preparing a plurality of complementary metal oxide semiconductor structures on one side of the substrate according to the complementary metal oxide semiconductor structure preparation process.
As shown in fig. 7, a plurality of CMOS structures 31 are prepared on one side of the substrate 10 according to a CMOS structure preparation process. The method for fabricating the CMOS structure 31 is well known to those skilled in the art, and will not be described herein.
And S230, preparing a first pH value detection layer on one side of the plurality of complementary metal oxide semiconductor structures far away from the substrate.
As shown in fig. 8, a first pH detection layer 218 is prepared on a side of the plurality of CMOS structures 31 away from the substrate 10, where the first pH detection layer 218 is a pH detection film layer of the first type of pH sensor 21.
Optionally, the first pH detecting layer 218 may include an inert metal layer, such as gold, silver or platinum, and the first pH detecting layer 218 is less sensitive to pH. The first pH detection layer 218 may be prepared on a side of the plurality of CMOS structures 31 away from the substrate 10 by evaporation, and the embodiment of the invention does not limit a specific preparation manner of the first pH detection layer 218.
S240, preparing a second pH value detection layer on one side, far away from the substrate, of part of the first pH value detection layer to obtain a first type of pH sensor exposing the first pH value detection layer and a second type of pH sensor exposing the second pH value detection layer.
As shown in fig. 9, a second pH detecting layer 228 is formed on a side of a portion of the first pH detecting layer 218 away from the substrate 10, where the second pH detecting layer 228 is a pH detecting film layer of the second type pH sensor 22. Thus, the first type pH sensor 21 exposing the first pH detecting layer 218 and the second type pH sensor 22 exposing the second pH detecting layer 228 are obtained.
In summary, the preparation method of the pH detection device provided by the embodiment of the invention can ensure high accuracy and sensitivity of pH detection, and has the beneficial effects of small volume and high stability; furthermore, because the first type of pH sensor and the second type of pH sensor included in the pH value detection device are CMOS sensors, the first type of pH sensor and the second type of pH sensor also have the advantages of low power consumption, high speed, strong anti-interference capability, high integration level and the like, and the detection performance of the pH value detection device is further improved.
Based on the same inventive concept, the embodiment of the invention also provides a pH value detection method, and the pH value detection device provided by the embodiment of the invention is adopted. Specifically, fig. 10 is a schematic flow chart of a pH detection method provided in an embodiment of the present invention, and as shown in fig. 10, the pH detection method provided in the embodiment of the present invention may include:
and S310, injecting the solution to be detected into the pH value detection device.
For example, a solution injection hole is formed in the pH detection device, a solution to be detected can be injected into the solution injection hole, and a pH sensor ensuring different pH detection sensitivities can be in contact with the solution to be detected.
S320, acquiring detection signals of the pH value detection device based on a peripheral detection circuit, wherein the detection signals at least comprise a first pH detection signal of the first type of pH sensor and a second pH detection signal of the second type of pH sensor.
For example, since the first type pH sensor and the second type pH sensor have different pH detection sensitivities, the first type pH sensor and the second type pH sensor have different detection signals based on the same solution to be detected, and the detection signal of the pH detection device is obtained based on a first pH detection signal obtained by the first type pH sensor and a second pH detection signal obtained by the second type pH sensor. Specifically, the detection signal of the pH detection device may be data obtained by performing statistical processing on the first pH detection signal and the second pH detection signal, for example, an average value difference, a peak value difference, or a median value difference between the first pH detection signal and the second pH detection signal, which is not limited in the embodiment of the present invention.
S330, determining the pH value of the solution to be detected according to the detection signal.
To sum up, the pH detection method provided in the embodiments of the present invention determines a detection signal of the pH detection apparatus at least according to the first pH detection signal and the second pH detection signal, determines a final detection signal of the pH detection apparatus according to a plurality of different detection signals, and determines the pH of the solution to be detected based on the obtained final detection signal.
Specifically, the pH value of the solution to be detected is determined according to the detection signal, specifically, the final detection signal of the pH detection device may be determined based on the average value difference and/or the peak value difference of the plurality of detection signals, and based on the final detection signal, the pH value of the solution to be detected may be determined by looking up a table or by introducing a fitting formula. Based on the above scheme, fig. 11 is another pH detection method provided in the embodiment of the present invention, and as shown in fig. 11, the pH detection method provided in the embodiment of the present invention may include:
and S410, injecting the solution to be detected into the pH value detection device.
S420, acquiring detection signals of the pH value detection device based on a peripheral detection circuit, wherein the detection signals at least comprise a first pH detection signal of the first type of pH sensor and a second pH detection signal of the second type of pH sensor.
S430, determining a mean difference and/or a peak difference of the detection signals according to the first pH detection signal and the second pH detection signal.
S440, determining the pH value of the solution to be detected by a method of looking up a table or substituting a fitting formula according to the average value difference and/or the peak value difference of the detection signals.
Optionally, before or after determining the average value difference and/or the peak value difference between the first pH detection signal and the second pH detection signal based on the solution to be detected, multiple solutions with known pH values may be injected into the pH detection device, the pH detection device may obtain the pH statistical data of the solution with known pH values, determine the average value difference line graph and the peak value difference line graph according to the pH statistical data, and arrange the obtained average value difference line graph and/or peak value difference line graph to obtain the graphs of pH values corresponding to different average value differences and/or peak value differences, so that the pH value of the solution to be detected is directly determined by table lookup according to the average value difference and/or peak value difference of the solution to be detected; or obtaining a fitting formula by adopting a straight line fitting mode according to the obtained mean difference line graph and the peak difference line graph, and bringing the mean difference and/or the peak difference into the fitting formula to directly determine the pH value of the solution to be measured according to the mean difference and/or the peak difference of the solution to be measured.
Specifically, fig. 12 is an analysis histogram of a detection signal provided by an embodiment of the present invention, for example, 12 represents a statistical result in the form of a histogram. The solutions with pH 8.0, 7.0, and 6.5 are sequentially injected into the pH detection device, and the signals are read by the peripheral circuit, and the read signals are respectively subjected to statistical processing, such as the histogram shown in fig. 12, and further, the obtained data may be subjected to gaussian fitting or integral distribution (not shown). As shown in fig. 12, since the first type pH sensor and the second type pH sensor have different pH detection sensitivities, based on the solution to be measured with the same pH value, a difference between the first pH detection signal and the second pH detection signal is significant, where a portion with a smaller input voltage value corresponds to the first type pH sensor, and a portion with a larger input voltage value corresponds to the second type pH sensor.
Further, according to the histogram shown in fig. 12, the mean difference between the solutions with three different pH values is determined, and a mean difference line graph shown in fig. 13 is obtained, where the abscissa in fig. 13 represents the pH value, and the ordinate represents the mean difference between the voltage signals, and the unit is mv, and according to the mean difference line graph shown in fig. 13, a fitting formula y corresponding to the mean difference is-136.7 x +1424, where x corresponds to the pH value, and y corresponds to the mean difference between the voltage signals. The pH value detection device is used for determining the average value difference of the voltage signals of the solution to be detected, the average value difference is substituted into the formula, the pH value of the solution to be detected can be directly determined, and the pH value detection is convenient and rapid. Moreover, it can be known from the line graph of the mean difference and the fitting formula shown in fig. 13 that when the pH value changes by 0.1, the change of the detection voltage signal corresponds to more than ten mv, and the accuracy and the sensitivity of the pH value detection are high.
Further, according to the histogram shown in fig. 12, the average value difference of the solutions with three different pH values is determined, and a peak value difference line graph shown in fig. 14 is obtained, where the abscissa in fig. 14 represents the pH value, and the ordinate represents the voltage signal peak value difference, and the unit is mv, and according to the peak value difference line graph shown in fig. 14, the fitting formula y corresponding to the peak value difference can be obtained, where x corresponds to the pH value, and y corresponds to the voltage signal peak value difference, which is-148.5 x + 1536. The peak value difference of the voltage signal of the solution to be detected is determined based on the pH value detection device, the pH value of the solution to be detected can be directly determined by substituting the peak value difference into the formula, and the pH value detection is convenient and quick. Moreover, it can be known from the peak difference line graph and the fitting formula shown in fig. 14 that when the pH value changes by 0.1, the change of the detection voltage signal corresponds to more than a dozen mv, and the accuracy and the sensitivity of the pH value detection are high.
Fig. 13 and 14 only illustrate how to determine the pH value of the solution to be measured according to the mean value difference and/or the peak value difference in the form of a fitting formula, and optionally, the mean value difference-pH value graph and/or the peak value difference-pH value graph can be obtained according to the line graph and the fitting formula.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that the features of the various embodiments of the invention may be partially or fully coupled to each other or combined and may be capable of cooperating with each other in various ways and of being technically driven. Numerous variations, rearrangements, combinations, and substitutions will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. A pH value detection device comprises a substrate and a plurality of pH sensors positioned on one side of the substrate;
the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, wherein the first type pH sensors and the second type pH sensors have different pH value detection sensitivities;
the first type of pH sensor and the second type of pH sensor are both complementary metal oxide semiconductor sensors;
the first type of pH sensor comprises:
the first source electrode, the first grid electrode and the first drain electrode are positioned on one side of the substrate, and the first grid electrode corresponds to a first channel region between the first source electrode and the first drain electrode;
the first insulating layers are arranged between the first conducting layers and the first grid electrode and between two adjacent first conducting layers;
a first pH detection layer on the first conductive layer on a side away from the substrate;
the second type of pH sensor comprises:
the second source electrode, the second grid electrode and the second drain electrode are positioned on one side of the substrate, and the second grid electrode corresponds to a second channel region between the second source electrode and the second drain electrode;
the second insulating layers are arranged between the second conducting layers and the second grid electrode and between two adjacent second conducting layers;
a first pH value detection layer positioned on the second conductive layer at one side far away from the substrate;
a second pH detecting layer on the first pH detecting layer;
the first source electrode, the first drain electrode, the second source electrode and the second drain electrode are arranged on the same layer;
the first grid and the second grid are arranged on the same layer;
the first conducting layer and the second conducting layer are arranged on the same layer;
the first insulating layer and the second insulating layer are arranged on the same layer;
first through holes are formed in at least part of the first insulating layers, and two adjacent first conductive layers are electrically connected through the first through holes;
at least part of the second insulating layer is provided with a second through hole, and two adjacent layers of the second conducting layers are electrically connected through the second through holes.
2. The pH detecting device according to claim 1, wherein a plurality of the first type of pH sensors are arrayed on the substrate side, and a plurality of the second type of pH sensors are arrayed on the substrate side;
the first type of pH sensor and the second type of pH sensor are sequentially arranged at intervals in a circulating manner; or the plurality of first type pH sensors are sequentially arranged at intervals, and the plurality of second type pH sensors are sequentially arranged at intervals.
3. The pH detecting device according to claim 1, wherein the first pH detecting layer comprises an inert metal layer, and the second pH detecting layer comprises a pH sensitive film.
4. The pH detection device of claim 1, further comprising a detection circuit;
the detection circuit is respectively connected with the first type of pH sensor and the second type of pH sensor and is used for reading a first pH detection signal of the first type of pH sensor and a second pH detection signal of the second type of pH sensor.
5. The pH detecting device according to claim 1, wherein the pH detecting range of the pH detecting device is 6.5-11.
6. A method for manufacturing a pH detection device according to any one of claims 1 to 5, comprising:
providing a substrate;
preparing a plurality of pH sensors on one side of the substrate, wherein the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, and the first type pH sensors and the second type pH sensors have different pH value detection sensitivities.
7. The method of manufacturing according to claim 6, wherein the first type of pH sensor and the second type of pH sensor are both complementary metal oxide semiconductor sensors;
preparing a plurality of pH sensors on one side of the substrate, wherein the plurality of pH sensors at least comprise a plurality of first type pH sensors and a plurality of second type pH sensors, and the method comprises the following steps:
preparing a plurality of complementary metal oxide semiconductor structures on one side of the substrate according to the preparation process of the complementary metal oxide semiconductor structures;
preparing a first pH value detection layer on one side of the plurality of complementary metal oxide semiconductor structures far away from the substrate;
and preparing a second pH value detection layer on one side of part of the first pH value detection layer, which is far away from the substrate, so as to obtain a first type of pH sensor exposing the first pH value detection layer and a second type of pH sensor exposing the second pH value detection layer.
8. A pH detection method using the pH detection device according to any one of claims 1 to 5, comprising:
injecting the solution to be detected into the pH value detection device;
acquiring detection signals of the pH value detection device based on a peripheral detection circuit, wherein the detection signals at least comprise first pH detection signals of the first type of pH sensor and second pH detection signals of the second type of pH sensor;
determining the pH value of the solution to be detected according to the detection signal,
the method comprises the following steps:
determining a mean difference and/or a peak difference of the detection signals from the first pH detection signal and the second pH detection signal;
and determining the pH value of the solution to be detected by a method of looking up a table or introducing the table into a fitting formula according to the average value difference and/or the peak value difference of the detection signals.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810432A1 (en) * | 1996-05-31 | 1997-12-03 | Siemens Aktiengesellschaft | Method for manufacturing a combined pressure and electrochemical sensor |
| JP2001033423A (en) * | 1999-07-16 | 2001-02-09 | Horiba Ltd | Ion-sensitive field-effect transistor-type sensor with reference electrode function |
| TW564476B (en) * | 2002-10-21 | 2003-12-01 | Univ Chung Yuan Christian | Method for fabricating a monolithic chip including pH, temperature and photo intensity multi-sensors and a readout circuit |
| CN102175740A (en) * | 2011-01-07 | 2011-09-07 | 浙江工业大学 | Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology |
| CN104280443A (en) * | 2013-07-08 | 2015-01-14 | 电子科技大学 | High sensitivity OTFT (organic thin film transistor) pH sensor making and pH detection |
| CN104422720A (en) * | 2013-08-22 | 2015-03-18 | 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 | Measuring Arrangement |
| CN104833384A (en) * | 2014-02-07 | 2015-08-12 | 霍尼韦尔国际公司 | Fluid sensor with backside of sensor die contacting header |
| CN106248761A (en) * | 2016-08-01 | 2016-12-21 | 严媚 | A kind of high sensitivity pH-value biologic sensor chip |
| CN107064255A (en) * | 2017-05-24 | 2017-08-18 | 江苏大学 | A kind of combination electrode formula pH sensors based on CMOS technology and preparation method thereof |
| CN107202823A (en) * | 2017-06-20 | 2017-09-26 | 龚雨 | A kind of ink jet printing prepares the method and its application of microelectrode array sensor |
| CN107505376A (en) * | 2017-07-14 | 2017-12-22 | 浙江大学 | A kind of pH sensor part and its manufacture method based on field-effect transistor structure |
| CN110168929A (en) * | 2016-11-23 | 2019-08-23 | 电路种子有限责任公司 | Use the low noise sensor amplifier and transimpedance amplifier of the electric current injection field effect transistor devices of complementary pair |
-
2019
- 2019-09-23 CN CN201910900509.4A patent/CN110618167B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810432A1 (en) * | 1996-05-31 | 1997-12-03 | Siemens Aktiengesellschaft | Method for manufacturing a combined pressure and electrochemical sensor |
| JP2001033423A (en) * | 1999-07-16 | 2001-02-09 | Horiba Ltd | Ion-sensitive field-effect transistor-type sensor with reference electrode function |
| TW564476B (en) * | 2002-10-21 | 2003-12-01 | Univ Chung Yuan Christian | Method for fabricating a monolithic chip including pH, temperature and photo intensity multi-sensors and a readout circuit |
| CN102175740A (en) * | 2011-01-07 | 2011-09-07 | 浙江工业大学 | Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology |
| CN104280443A (en) * | 2013-07-08 | 2015-01-14 | 电子科技大学 | High sensitivity OTFT (organic thin film transistor) pH sensor making and pH detection |
| CN104422720A (en) * | 2013-08-22 | 2015-03-18 | 恩德莱斯和豪瑟尔测量及调节技术分析仪表两合公司 | Measuring Arrangement |
| CN104833384A (en) * | 2014-02-07 | 2015-08-12 | 霍尼韦尔国际公司 | Fluid sensor with backside of sensor die contacting header |
| CN106248761A (en) * | 2016-08-01 | 2016-12-21 | 严媚 | A kind of high sensitivity pH-value biologic sensor chip |
| CN110168929A (en) * | 2016-11-23 | 2019-08-23 | 电路种子有限责任公司 | Use the low noise sensor amplifier and transimpedance amplifier of the electric current injection field effect transistor devices of complementary pair |
| CN107064255A (en) * | 2017-05-24 | 2017-08-18 | 江苏大学 | A kind of combination electrode formula pH sensors based on CMOS technology and preparation method thereof |
| CN107202823A (en) * | 2017-06-20 | 2017-09-26 | 龚雨 | A kind of ink jet printing prepares the method and its application of microelectrode array sensor |
| CN107505376A (en) * | 2017-07-14 | 2017-12-22 | 浙江大学 | A kind of pH sensor part and its manufacture method based on field-effect transistor structure |
Non-Patent Citations (2)
| Title |
|---|
| A pH sensor with a double-gate silicon nanowire field-effect transistor;Jae-Hyuk Ahn et al.;《Applied Physics Letters》;20130226;第102卷;第083701-1页至第083701-5页 * |
| 利用CMOS技术实现pH-ISFET传感器集成化的设计;杨振;《半导体技术》;20041231;第29卷(第12期);第56-59页 * |
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|---|---|
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