CN110600555A - Antireflection film structure and PERC battery - Google Patents
Antireflection film structure and PERC battery Download PDFInfo
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- CN110600555A CN110600555A CN201910806038.0A CN201910806038A CN110600555A CN 110600555 A CN110600555 A CN 110600555A CN 201910806038 A CN201910806038 A CN 201910806038A CN 110600555 A CN110600555 A CN 110600555A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title description 17
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title description 17
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title description 17
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000010030 laminating Methods 0.000 claims abstract description 17
- 229910003087 TiOx Inorganic materials 0.000 claims abstract description 15
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 12
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 9
- 229910017107 AlOx Inorganic materials 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 239000005518 polymer electrolyte Substances 0.000 abstract 1
- 230000003667 anti-reflective effect Effects 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an antireflection film structure and a PERC (polymer electrolyte resistance) battery, which can further reduce the reflectivity of a front passivation dielectric film layer and simultaneously further improve the surface passivation effect. An antireflection film structure comprises a first antireflection layer, a second antireflection layer and a third antireflection layer which are sequentially stacked; the first antireflection layer is formed on a silicon substrate and is a SiOx film layer, an AlOx film layer and MgF2The film layer is formed by AlOx film layer and MgF2A laminated structure formed by laminating film layers; the second antireflection layer is a SiNx film layer, a SiC film layer or a TiOx film layer, or is a laminated structure formed by laminating at least two of the SiNx film layer, the SiC film layer and the TiOx film layer; the third antireflection layer is an SiOxCy film layer or a laminated structure formed by laminating an SiOxCy film layer and an SiOxNy film layer.
Description
Technical Field
The invention belongs to the field of crystalline silicon solar cells, and relates to an antireflection film structure, a preparation method of the antireflection film and a PERC cell adopting the antireflection film.
Background
The PERC solar cell is the most mainstream product in the photovoltaic market at present, and the cell has high efficiency and high power due to the excellent passivation effect provided by the back side alumina, so that the cell has strong competitiveness in the market. The front side adopts a selective emitter structure, so that the spectral response of the PERC cell in a short wave band can be further improved, and meanwhile, the composition of a non-doped region is reduced through high sheet resistance diffusion, so that the passivation effect of the cell is improved, and the open voltage is improved.
The front antireflection film of the current industrialized solar cell mainly takes a SiNx film as a main material, the reflection of incident light can be reduced by optimizing the current SiNx film through a process, and the structural reflectivity of the current optimal SiNx film layer can reach 3-5%.
Disclosure of Invention
The invention provides an antireflection film structure and a PERC battery, which can further reduce the reflectivity of a front passivation dielectric film layer and simultaneously further improve the surface passivation effect.
In order to achieve the purpose, the invention adopts a technical scheme as follows:
an antireflection film structure comprises a first antireflection layer, a second antireflection layer and a third antireflection layer which are sequentially stacked; the first antireflection layer is formed on a silicon substrate and is a SiOx film layer, an AlOx film layer and MgF2The film layer is formed by AlOx film layer and MgF2A laminated structure formed by laminating film layers; the second antireflection layer is a SiNx film layer, a SiC film layer or a TiOx film layer, or is a laminated structure formed by laminating at least two of the SiNx film layer, the SiC film layer and the TiOx film layer; the third antireflection layer is an SiOxCy film layer or a laminated structure formed by laminating an SiOxCy film layer and an SiOxNy film layer.
Preferably, the second anti-reflection layer is a stacked structure formed by stacking a SiNx film layer, a SiC film layer, and a TiOx film layer.
Preferably, the refractive index of the second antireflection layer > the refractive index of the third antireflection layer > the refractive index of the first antireflection layer.
More preferably, the refractive index of the first anti-reflective layer is 1.4 to 1.5, the refractive index of the second anti-reflective layer is 2.1 to 2.3, and the refractive index of the third anti-reflective layer is 1.7 to 1.9.
Preferably, the thickness of the first antireflection layer is 5 to 10nm, the thickness of the second antireflection layer is 50 to 70nm, and the thickness of the third antireflection layer is 10 to 30 nm.
In a preferred embodiment, the first anti-reflective layer is a SiOx film layer, the second anti-reflective layer is a SiNx film layer, and the third anti-reflective layer is a SiOxCy film layer.
In a preferred embodiment, the first anti-reflective layer is a SiOx film layer, the second anti-reflective layer is a SiNx film layer, and the third anti-reflective layer is a stacked structure formed by stacking SiOxCy film layers and SiOxNy;
in a preferred embodiment, the first anti-reflective layer is a SiOx film layer, the second anti-reflective layer is a stacked structure formed by stacking a SiNx film layer, a SiC film layer, and a TiOx film layer, and the third anti-reflective layer is a SiOxCy film layer;
in a preferred embodiment, the first anti-reflection layer is MgF2The second antireflection film layer is a SiNx film layer, and the third antireflection film layer is an SiOxCy film layer.
Preferably, the first anti-reflection layer is formed by SiH4And N2The mixed gas of O is formed by deposition under the plasma condition.
Preferably, the second anti-reflection layer is formed by SiH4And NH3Is formed by reaction under plasma conditions, or by reaction of a gas mixture selected from CH4、C2H6、C2H4、C2H2With SiH4Formed by reaction under PECVD conditions, or by reaction of titanium-containing metallo-organic compounds with O2The reaction formation is carried out under plasma conditions.
Preferably, the third anti-reflection layer is formed by SiH4、CH4、N2Carrying out the three mixed gases of O under the condition of plasmaFormed by reaction, or by SiH4And N2The mixed gas of O is formed by reaction under the plasma condition.
The other technical scheme adopted by the invention is as follows:
a PERC cell comprising a silicon substrate and further comprising an antireflection film structure as described above, wherein said first layer of said antireflection film structure is formed on a front side of said silicon substrate.
Compared with the prior art, the invention has the following advantages by adopting the scheme:
the three-layer antireflection film structure with the matched refractive index is low in refractive index, ensures the passivation effect on a silicon wafer, can effectively reduce the reflection of incident light, particularly reduce the reflection of light with the wavelength of less than 500nm, simultaneously improves the spectral response of a long wave band with the wavelength of more than 800nm, and can reduce the reflectivity of a front dielectric film to be within 1 percent. According to the PERC battery supported by the three-layer antireflection film structure, compared with a conventional SiNx antireflection film battery, CTM can be better packaged at the end of the assembly by using a battery piece with the same conversion efficiency, namely the output power of a photovoltaic assembly is improved by 1.0W; compared with the conventional SiNx anti-reflection film, the appearance is darker, and the anti-reflection effect is better;
drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural view of a PERC cell of example 1;
fig. 2 is a schematic structural diagram of an antireflection film structure of a PERC cell according to example 2;
fig. 3 is a structural diagram of an antireflection film structure of a PERC cell according to example 3;
fig. 4 is a structural diagram of an antireflection film structure of a PERC cell according to embodiment 4.
Wherein:
100. an antireflection film structure;
111. a SiOx film layer; 112. MgF2A film layer;
121. a SiNx film layer; 122. a SiC film layer; 123. a TiOx film layer;
131. a SiOxCy film layer; 132. a SiOxNy film layer;
200. a silicon substrate.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings so that the advantages and features of the invention may be more readily understood by those skilled in the art. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Fig. 1 shows a partial structure of a PERC cell of example 1. Referring to fig. 1, the PERC cell includes a silicon substrate 200 and an anti-reflective film structure 100 formed on a front surface of the silicon substrate 200. Wherein, the silicon substrate 200 is a doped silicon substrate, and the anti-reflection film structure 100 is formed on the front doped layer of the silicon substrate 200. Specifically, as shown in fig. 1, the anti-reflection film structure 100 is composed of a first anti-reflection layer, a second anti-reflection layer and a third anti-reflection layer which are sequentially stacked, and the first anti-reflection layer is formed on the front surface of the silicon substrate 200 in contact with the silicon substrate.
Wherein the first anti-reflection layer can be SiOx film, AlOx film, MgF2The film layer is formed by AlOx film layer and MgF2A laminated structure formed by laminating film layers; the preparation of the first antireflection layer comprises the step of passing SiH4And N2And depositing the mixed gas of O under the plasma condition. The second antireflection layer is a SiNx film layer, a SiC film layer or a TiOx film layer, or is a laminated structure formed by laminating at least two of the SiNx film layer, the SiC film layer and the TiOx film layer; the preparation of the second antireflection layer comprises passing SiH4And NH3In the mixing ofThe gas is reacted under plasma conditions, or by a gas selected from CH4、C2H6、C2H4、C2H2With SiH4By reaction under PECVD conditions, or by reaction of titanium-containing metallo-organic compounds with O2The step of conducting the reaction under plasma conditions. The third antireflection layer is an SiOxCy film layer or a laminated structure formed by laminating the SiOxCy film layer and the SiOxNy film layer; the preparation of the third antireflection layer comprises the step of passing SiH4、CH4、N2Reacting three mixed gases of O under the condition of plasma, or passing through SiH4And N2And reacting the mixed gas of O under the plasma condition.
The refractive index of the second antireflection layer is greater than the refractive indices of the first antireflection layer and the second antireflection layer. Further, the refractive index of the second antireflection layer > the refractive index of the third antireflection layer > the refractive index of the first antireflection layer. Specifically, in this embodiment, the refractive index of the first antireflection layer is 1.4 to 1.5, the refractive index of the second antireflection layer is 2.1 to 2.3, and the refractive index of the third antireflection layer is 1.7 to 1.9. The anti-reflection film layer structure with the matched refractive index is adopted, so that the passivation effect on the silicon wafer can be ensured, and the reflection of incident light can be effectively reduced.
The thickness of the first antireflection layer is 5-10nm, the thickness of the second antireflection layer is 50-70nm, and the thickness of the third antireflection layer is 10-30 nm.
Specifically, in this embodiment, as shown in fig. 1, the antireflection film structure 100 includes: the first antireflection layer is a SiOx film layer 111 formed on the front surface of the silicon substrate, the refractive index is 1.4-1.5, and the thickness is 5-10 nm; the second antireflection layer is a SiNx film layer 121 formed on the SiOx film layer 111, the refractive index is 2.1-2.3, and the thickness is 50-70 nm; and the third antireflection layer comprises an SiOxCy film layer 131 formed on the SiNx film layer 121, has a refractive index of 1.7-1.9, and has a thickness of 10-30 nm.
The preparation method of the antireflection film structure of the embodiment includes the following steps:
step 1, inSiH is first used in the surface coating process4+N2Depositing a SiOx dielectric film by using O mixed gas under a plasma condition to form the first antireflection layer, wherein the thickness of the dielectric film is 5-10nm, and the refractive index is controlled to be 1.4-1.5;
step 2, SiH is used4+NH3The mixed gas reacts under the plasma condition to prepare the SiNx antireflection dielectric film, namely the second antireflection layer is formed on the SiOx dielectric film, the thickness of the SiNx antireflection dielectric film is 50-70nm, and the refractive index is controlled to be 2.1-2.3;
step 3, SiH is used4+CH4+N2And preparing the SiOxCy antireflection dielectric film by using three mixed gases of O, namely forming the third antireflection layer on the SiNx antireflection dielectric film, wherein the thickness of the SiOxCy antireflection dielectric film is 10-30nm, and the refractive index is controlled to be 1.7-1.9.
The preparation method is easy to integrate into the current production line without adding additional equipment.
The antireflection film structure of the embodiment can further reduce the reflection of the front side to incident light with the wavelength of below 500nm, improve the spectral response of a long wave band with the long wave of above 800nm, and reduce the reflectivity of the front side dielectric film to be within 1%.
Example 2
The antireflection film structure of this example is substantially the same as that of example 1. The difference from example 1 is that: and the third antireflection layer is structured. As shown in fig. 2, the antireflection film structure 100 for a PERC cell in the present embodiment includes: the first antireflection layer is a SiOx film layer 111 formed on the front surface of the silicon substrate, the refractive index is 1.4-1.5, and the thickness is 5-10 nm; the second antireflection layer is a SiNx film layer 121 formed on the SiOx film layer 111, the refractive index is 2.1-2.3, and the thickness is 50-70 nm; the third anti-reflection layer comprises an SiOxCy film layer 131 formed on the SiNx film layer 121 and an SiOxNy film layer 132 formed on the SiOxCy film layer 131, and is a two-layer laminated structure formed by laminating the SiOxCy film layer 131 and the SiOxNy film layer 132, wherein the refractive index is 1.7-1.9, and the thickness is 10-30 nm.
Example 3
The antireflection film structure of this example is substantially the same as that of example 1. The difference from example 1 is that: and the second antireflection layer is structured. As shown in fig. 3, the antireflection film structure for a PERC cell in the present embodiment includes: the first antireflection layer is a SiOx film layer 111 formed on the front surface of the silicon substrate, the refractive index is 1.4-1.5, and the thickness is 5-10 nm; a second anti-reflection layer, including a SiNx film layer 121 formed on the SiOx film layer 111, a SiC film layer 122 formed on the SiNx film layer 121, and a TiOx film layer 123 formed on the SiC film layer 122, the second anti-reflection layer having a three-layer laminated structure formed by laminating the three films, a refractive index of 2.1-2.3, and a thickness of 50-70 nm; the third anti-reflection layer is the SiOxCy film layer 131 formed on the TiOx film layer 123, the refractive index is 1.7-1.9, and the thickness is 10-30 nm.
Example 4
The antireflection film structure of this example is substantially the same as that of example 1. The difference from example 1 is that: and the structure of the first antireflection layer. As shown in fig. 4, the antireflection film structure for a PERC cell in the present embodiment includes: a first antireflection layer of MgF formed on the front surface of the silicon substrate2A film layer 112 with a refractive index of 1.4-1.5 and a thickness of 5-10 nm; a second antireflection layer formed on MgF2The SiNx film layer 121 on the film layer 112 has a refractive index of 2.1-2.3 and a thickness of 50-70 nm; the third anti-reflection layer is an SiOxCy film layer 131 formed on the SiNx film layer 121, and has a refractive index of 1.7-1.9 and a thickness of 10-30 nm.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and are preferred embodiments, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the scope of the present invention. All equivalent changes or modifications made according to the principles of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. An antireflection film structure characterized in that: the antireflection layer comprises a first antireflection layer, a second antireflection layer and a third antireflection layer which are sequentially stacked; the first antireflection layer is formed on a silicon substrate and is a SiOx film layer or AlOxFilm layer, MgF2The film layer is formed by AlOx film layer and MgF2A laminated structure formed by laminating film layers; the second antireflection layer is a SiNx film layer, a SiC film layer or a TiOx film layer, or is a laminated structure formed by laminating at least two of the SiNx film layer, the SiC film layer and the TiOx film layer; the third antireflection layer is an SiOxCy film layer or a laminated structure formed by laminating an SiOxCy film layer and an SiOxNy film layer.
2. The antireflection film structure of claim 1, wherein: the second antireflection layer is of a laminated structure formed by laminating a SiNx film layer, a SiC film layer and a TiOx film layer.
3. The antireflection film structure of claim 1, wherein: the refractive index of the second antireflection layer > the refractive index of the third antireflection layer > the refractive index of the first antireflection layer.
4. The antireflection film structure of claim 3, wherein: the refractive index of the first antireflection layer is 1.4-1.5, the refractive index of the second antireflection layer is 2.1-2.3, and the refractive index of the third antireflection layer is 1.7-1.9.
5. The antireflection film structure of claim 1, wherein: the thickness of the first antireflection layer is 5-10nm, the thickness of the second antireflection layer is 50-70nm, and the thickness of the third antireflection layer is 10-30 nm.
6. The antireflection film structure of claim 1, wherein: the first antireflection layer is a SiOx film layer, the second antireflection layer is a SiNx film layer, and the third antireflection layer is a SiOxCy film layer;
or the first antireflection layer is a SiOx film layer, the second antireflection film layer is a SiNx film layer, and the third antireflection film layer is a laminated structure formed by laminating SiOxCy film layers and SiOxNy;
or the first antireflection layer is a SiOx film layer, the second antireflection layer is a laminated structure formed by laminating a SiNx film layer, a SiC film layer and a TiOx film layer, and the third antireflection layer is a SiOxCy film layer;
or the first antireflection layer is an MgF2 film layer, the second antireflection layer is a SiNx film layer, and the third antireflection layer is an SiOxCy film layer.
7. The antireflection film structure of claim 1, wherein: the first antireflection layer is made of SiH4And N2The mixed gas of O is formed by deposition under the plasma condition.
8. The antireflection film structure of claim 1, wherein: the second antireflection layer is made of SiH4And NH3Is formed by reaction under plasma conditions, or by reaction of a gas mixture selected from CH4、C2H6、C2H4、C2H2With SiH4Formed by reaction under PECVD conditions, or by reaction of titanium-containing metallo-organic compounds with O2The reaction formation is carried out under plasma conditions.
9. The antireflection film structure of claim 1, wherein: the third antireflection layer is made of SiH4、CH4、N2The three mixed gases of O are reacted under the condition of plasma, or are formed by SiH4And N2The mixed gas of O is formed by reaction under the plasma condition.
10. A PERC cell comprising a silicon substrate, wherein: the antireflection film structure of any of claims 1 to 9 further comprising wherein the first layer of the antireflection film structure is formed on a front side of the silicon substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910806038.0A CN110600555A (en) | 2019-08-29 | 2019-08-29 | Antireflection film structure and PERC battery |
| PCT/CN2020/083206 WO2021036264A1 (en) | 2019-08-29 | 2020-04-03 | Anti-reflection film structure and perc cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910806038.0A CN110600555A (en) | 2019-08-29 | 2019-08-29 | Antireflection film structure and PERC battery |
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| CN110600555A true CN110600555A (en) | 2019-12-20 |
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| CN201910806038.0A Pending CN110600555A (en) | 2019-08-29 | 2019-08-29 | Antireflection film structure and PERC battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021036264A1 (en) * | 2019-08-29 | 2021-03-04 | 苏州腾晖光伏技术有限公司 | Anti-reflection film structure and perc cell |
| CN116072741A (en) * | 2023-03-06 | 2023-05-05 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof, photovoltaic module and electricity utilization device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN103943717A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing solar cell laminated antireflective film through tubular PECVD |
| CN104576770A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery |
| CN104659118A (en) * | 2015-01-27 | 2015-05-27 | 无锡赛晶太阳能有限公司 | Multi-layered anti-reflecting film for solar cells |
| CN206194747U (en) * | 2016-11-21 | 2017-05-24 | 浙江晶科能源有限公司 | Solar wafer of anti PID effect |
| CN108922936A (en) * | 2018-07-31 | 2018-11-30 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar battery and preparation method thereof |
| CN210692547U (en) * | 2019-08-29 | 2020-06-05 | 苏州腾晖光伏技术有限公司 | Antireflection film structure and PERC battery |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653871B (en) * | 2016-11-18 | 2019-01-08 | 横店集团东磁股份有限公司 | A kind of PERC solar battery structure and its preparation process |
| WO2018221578A1 (en) * | 2017-05-31 | 2018-12-06 | 東洋アルミニウム株式会社 | Paste composition for solar battery |
| CN107863419A (en) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of two-sided PERC crystal silicon solar energy batteries |
| CN109461777A (en) * | 2018-10-24 | 2019-03-12 | 苏州腾晖光伏技术有限公司 | A kind of PERC cell backside passivating structure and preparation method thereof |
| CN109698246A (en) * | 2018-12-25 | 2019-04-30 | 嘉兴尚能光伏材料科技有限公司 | PERC solar cell and preparation method thereof |
| CN110600555A (en) * | 2019-08-29 | 2019-12-20 | 苏州腾晖光伏技术有限公司 | Antireflection film structure and PERC battery |
-
2019
- 2019-08-29 CN CN201910806038.0A patent/CN110600555A/en active Pending
-
2020
- 2020-04-03 WO PCT/CN2020/083206 patent/WO2021036264A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN103943717A (en) * | 2014-03-19 | 2014-07-23 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing solar cell laminated antireflective film through tubular PECVD |
| CN104576770A (en) * | 2014-12-31 | 2015-04-29 | 江苏顺风光电科技有限公司 | Passivation and reflection reduction multi-layer film for high-efficiency black crystal silicon battery |
| CN104659118A (en) * | 2015-01-27 | 2015-05-27 | 无锡赛晶太阳能有限公司 | Multi-layered anti-reflecting film for solar cells |
| CN206194747U (en) * | 2016-11-21 | 2017-05-24 | 浙江晶科能源有限公司 | Solar wafer of anti PID effect |
| CN108922936A (en) * | 2018-07-31 | 2018-11-30 | 晶澳（扬州）太阳能科技有限公司 | A kind of MWT solar battery and preparation method thereof |
| CN210692547U (en) * | 2019-08-29 | 2020-06-05 | 苏州腾晖光伏技术有限公司 | Antireflection film structure and PERC battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021036264A1 (en) * | 2019-08-29 | 2021-03-04 | 苏州腾晖光伏技术有限公司 | Anti-reflection film structure and perc cell |
| CN116072741A (en) * | 2023-03-06 | 2023-05-05 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof, photovoltaic module and electricity utilization device |
| CN116072741B (en) * | 2023-03-06 | 2023-08-15 | 通威太阳能(眉山)有限公司 | Solar cell, preparation method thereof, photovoltaic module and electricity utilization device |
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