CN110600470A - 一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法 - Google Patents
一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法 Download PDFInfo
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- CN110600470A CN110600470A CN201910776876.8A CN201910776876A CN110600470A CN 110600470 A CN110600470 A CN 110600470A CN 201910776876 A CN201910776876 A CN 201910776876A CN 110600470 A CN110600470 A CN 110600470A
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- based laser
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- hemt
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 108
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- 229910052751 metal Inorganic materials 0.000 claims description 12
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- 238000000151 deposition Methods 0.000 claims description 10
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 8
- 229910015844 BCl3 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- -1 polydimethylsiloxane Polymers 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 152
- 238000009616 inductively coupled plasma Methods 0.000 description 11
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- 239000004065 semiconductor Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 6
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910010421 TiNx Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910776876.8A CN110600470B (zh) | 2019-08-22 | 2019-08-22 | 一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法 |
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CN201910776876.8A CN110600470B (zh) | 2019-08-22 | 2019-08-22 | 一种GaN基激光器和AlGaN/GaN HEMT集成器件制备方法 |
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CN110600470A true CN110600470A (zh) | 2019-12-20 |
CN110600470B CN110600470B (zh) | 2021-10-22 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234123A (zh) * | 2020-09-30 | 2021-01-15 | 深圳第三代半导体研究院 | 一种用于双向通信的集成器件及其制备方法 |
CN117153961A (zh) * | 2023-10-31 | 2023-12-01 | 季华实验室 | HEMT驱动MicroLED一体化背板及其制作方法 |
Citations (6)
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---|---|---|---|---|
CN101517700A (zh) * | 2006-09-20 | 2009-08-26 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
CN105870265A (zh) * | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
CN106252373A (zh) * | 2016-09-09 | 2016-12-21 | 复旦大学 | 一种GaN基集成器件及其制备方法 |
US20170271327A1 (en) * | 2015-03-26 | 2017-09-21 | Wen-Jang Jiang | Group-iii nitride semiconductor device and method for fabricating the same |
CN108550683A (zh) * | 2018-06-14 | 2018-09-18 | 华南理工大学 | 一种高电子迁移率晶体管与垂直结构发光二极管的单片集成方法 |
US20180286734A1 (en) * | 2017-03-28 | 2018-10-04 | X-Celeprint Limited | Micro-device pockets for transfer printing |
-
2019
- 2019-08-22 CN CN201910776876.8A patent/CN110600470B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101517700A (zh) * | 2006-09-20 | 2009-08-26 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
US20170271327A1 (en) * | 2015-03-26 | 2017-09-21 | Wen-Jang Jiang | Group-iii nitride semiconductor device and method for fabricating the same |
CN105870265A (zh) * | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
CN106252373A (zh) * | 2016-09-09 | 2016-12-21 | 复旦大学 | 一种GaN基集成器件及其制备方法 |
US20180286734A1 (en) * | 2017-03-28 | 2018-10-04 | X-Celeprint Limited | Micro-device pockets for transfer printing |
CN108550683A (zh) * | 2018-06-14 | 2018-09-18 | 华南理工大学 | 一种高电子迁移率晶体管与垂直结构发光二极管的单片集成方法 |
Non-Patent Citations (1)
Title |
---|
BIN LU等: "High Breakdown (> 1500 V) AlGaN/GaN HEMTs by Substrate-Transfer Technology", 《IEEE ELECTRON DEVICE LETTERS》 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112234123A (zh) * | 2020-09-30 | 2021-01-15 | 深圳第三代半导体研究院 | 一种用于双向通信的集成器件及其制备方法 |
CN117153961A (zh) * | 2023-10-31 | 2023-12-01 | 季华实验室 | HEMT驱动MicroLED一体化背板及其制作方法 |
CN117153961B (zh) * | 2023-10-31 | 2024-02-13 | 季华实验室 | HEMT驱动MicroLED一体化背板及其制作方法 |
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