CN110581336A - improved branch line coupler based on coaxial silicon through hole - Google Patents
improved branch line coupler based on coaxial silicon through hole Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention relates to an improved branch line coupler based on a coaxial silicon through hole, which comprises a top layer module, a silicon substrate layer module and a bottom layer module which are sequentially connected from top to bottom, wherein the top layer module comprises a top layer first dielectric layer, a top layer grounding shielding ring, a top layer first signal interconnection column, a top layer grounding layer, a top layer dielectric ring, a top layer second signal interconnection column, a top layer second dielectric layer, a top layer third signal interconnection column, a top layer port signal line and a top layer signal line; the silicon substrate layer module comprises a silicon substrate, a first dielectric ring, a grounding shielding ring, a second dielectric ring, a rear signal interconnection column and a front signal interconnection column; the bottom module comprises a bottom first dielectric layer, a bottom ground shield ring, a bottom first signal interconnection column, a bottom ground layer, a bottom dielectric ring, a bottom second signal interconnection column, a bottom second dielectric layer, a bottom third signal interconnection column, a bottom port signal line and a bottom signal line.
Description
Technical Field
the invention belongs to the field of three-dimensional integrated circuits, and particularly relates to an improved branch line coupler based on a coaxial silicon through hole.
Background
the coupler is one of the key passive devices of the microwave integrated circuit system, and is mainly used for completing power distribution and phase distribution of signals among various elements and various modules.
because the odd mode and the even mode have different phase speeds, the parallel coupling line coupler is difficult to realize high directionality. A branch line coupler consisting of two pairs of 1/4 wavelength transmission line segments with different characteristic impedances can solve this problem well. For the weak coupling branch line coupler, the characteristic impedance of the parallel arm is very high, and the parallel arm is limited by the minimum line width of the manufacturing process, so that the simple microstrip line is difficult to realize. The 1/4 wavelength coupling transmission line segment with two end-to-angle earthed has high impedance characteristic, and is the best choice for realizing the coupler under the branch with high directivity and weak coupling strength.
a microwave three-dimensional integrated circuit (3-D IC) vertically stacks a plurality of active and passive circuit modules and employs through-silicon vias (TSVs) interconnect channels to achieve high-speed, high-density communication between upper and lower layer modules. The trend of microwave 3-D ICs and the vertical interconnection advantages of TSVs have forced the elements and modules in conventional microwave systems to gradually adopt three-dimensional structures. The grounding shielding ring is arranged around the coaxial TSV, so that the grounding shielding ring is very suitable for embedding partial structures of low-loss and high-isolation microwave couplers and other elements into the silicon substrate, and the chip area is reduced. But at present, no three-dimensional branch line microwave coupler based on the coaxial TSV exists.
disclosure of Invention
The purpose of the invention is as follows: the present invention is directed to an improvement of the above-mentioned problems of the prior art, and an improved branch line coupler based on a coaxial through-silicon via is provided.
The technical scheme is as follows: an improved branch line coupler based on a coaxial through silicon via comprises a top layer module, a silicon substrate layer module and a bottom layer module, wherein the top layer module is arranged on the upper surface of the silicon substrate layer module, and the bottom layer module is arranged on the lower surface of the silicon substrate layer module;
The top module comprises a top first dielectric layer, a top ground shield ring, a top first signal interconnection column, a top ground layer, a top dielectric ring, a top second signal interconnection column, a top second dielectric layer, a top third signal interconnection column, a top port signal line and a top signal line;
The silicon substrate layer module comprises a silicon substrate, a first dielectric ring, a grounding shielding ring, a second dielectric ring, a rear signal interconnection column and a front signal interconnection column;
the bottom module comprises a bottom first dielectric layer, a bottom ground shield ring, a bottom first signal interconnection column, a bottom ground layer, a bottom dielectric ring, a bottom second signal interconnection column, a bottom second dielectric layer, a bottom third signal interconnection column, a bottom port signal line and a bottom signal line;
Two top layer port signal lines which are symmetrically distributed along the central line of the coupler in a left-right axial mode are arranged on the left side and the right side of the top layer signal line, the two top layer port signal lines are sequentially connected with the top layer signal line, and the length of the top layer signal line is 1/4 wavelengths;
the top layer second medium layer is provided with two top layer third signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
the top ground layer is provided with two top second signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a top dielectric ring is arranged between the top ground layer and the top second signal interconnection columns;
the top grounding layer, the top second dielectric layer and the top port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
The top layer first dielectric layer is provided with two top layer grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, a top layer first signal interconnection column is arranged at the rear part of the center of each top layer grounding shielding ring, a top layer grounding column is arranged at the front part of the center of each top layer grounding shielding ring, and the two top layer first signal interconnection columns and the two top layer grounding columns are symmetrical about the center of the coupler;
the silicon substrate is provided with two grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, and a first medium ring is arranged between the outer side of each grounding shielding ring and the silicon substrate;
A rear signal interconnection column is arranged at the rear part of the center of each grounding shielding ring, a front signal interconnection column is arranged at the front part of the center of each grounding shielding ring, the two rear signal interconnection columns and the two front signal interconnection columns are symmetrical about the center of the coupler, and a second dielectric ring is arranged among the rear signal interconnection column, the front signal interconnection column and the grounding shielding ring;
The rear signal interconnection column, the front signal interconnection column and the grounding shielding ring form a coupling transmission line structure, and the length of the coupling transmission line structure is 1/4 wavelengths;
the bottom layer first dielectric layer is provided with two bottom layer grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, a bottom layer first signal interconnection column is arranged at the rear part of the center of each bottom layer grounding shielding ring, a bottom layer grounding column is arranged at the front part of the center of each bottom layer grounding shielding ring, and the two bottom layer first signal interconnection columns and the two bottom layer grounding columns are symmetrical about the center of the coupler;
the bottom grounding layer is provided with two bottom second signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a bottom medium ring is arranged between the bottom grounding layer and the bottom second signal interconnection columns;
the bottom layer second medium layer is provided with two bottom layer third signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
two bottom layer port signal lines which are symmetrically distributed along the center line of the coupler in a left-right axial mode are arranged on the left side and the right side of the bottom layer signal line, the two bottom layer port signal lines are sequentially connected with the bottom layer signal line, and the length of the bottom layer signal line is 1/4 wavelengths;
The bottom grounding layer, the bottom second dielectric layer and the bottom port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
the top signal line, the top third signal interconnection column, the top second signal interconnection column, the top first signal interconnection column, the rear signal interconnection column, the bottom ground column and the bottom ground layer are sequentially connected from top to bottom;
The bottom signal line, the bottom third signal interconnection column, the bottom second signal interconnection column, the bottom first signal interconnection column, the front signal interconnection column, the top ground column and the top ground layer are sequentially connected from bottom to top;
The top grounding layer, the top grounding shielding ring, the bottom grounding shielding ring and the bottom grounding layer are sequentially connected from top to bottom;
the top layer second dielectric layer, the top layer dielectric ring, the top layer first dielectric layer, the second dielectric ring, the bottom layer first dielectric layer, the bottom layer dielectric ring and the bottom layer second dielectric layer are sequentially connected from top to bottom;
The top layer first dielectric layer, the first dielectric ring and the bottom layer first dielectric layer are sequentially connected from top to bottom.
further, the centers of the top layer ground shielding ring, the ground shielding ring and the bottom layer ground shielding ring are on the same straight line.
Furthermore, the centers of the top layer third signal interconnection column, the top layer second signal interconnection column, the top layer dielectric ring, the top layer first signal interconnection column, the rear signal interconnection column and the bottom layer grounding column are positioned on the same straight line.
further, the centers of the bottom layer third signal interconnection column, the bottom layer second signal interconnection column, the bottom layer dielectric ring, the bottom layer first signal interconnection column, the front signal interconnection column and the top layer grounding column are located on the same straight line.
Further, the improved branch line coupler based on the coaxial through silicon via is symmetrical to the left and right.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top port signal line, the top signal line, the bottom port signal line and the bottom signal line are copper wires or silver wires; the top layer grounding layer and the bottom layer grounding layer are copper layers or silver layers.
As a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top layer third signal interconnection column, the top layer second signal interconnection column, the top layer first signal interconnection column, the top layer grounding column, the rear signal interconnection column, the front signal interconnection column, the bottom layer grounding column, the bottom layer first signal interconnection column, the bottom layer second signal interconnection column and the bottom layer third signal interconnection column are copper columns, silver columns, tungsten columns or polysilicon columns.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top layer grounding shielding ring, the grounding shielding ring and the bottom layer grounding shielding ring are copper rings, silver rings, tungsten rings or polysilicon rings.
As a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top layer second dielectric layer, the top layer first dielectric layer, the bottom layer first dielectric layer and the bottom layer second dielectric layer are silicon dioxide layers, silicon nitride layers or benzocyclobutene layers, and the top layer dielectric ring, the first dielectric ring, the second dielectric ring and the bottom layer dielectric ring are silicon dioxide rings, silicon nitride rings or benzocyclobutene rings.
Has the advantages that: the invention discloses an improved branch line coupler based on a coaxial silicon through hole, which has the following beneficial effects:
1. the invention adopts the coaxial silicon through hole technology to realize the two parallel arms of the branch line coupler, thereby forming a three-dimensional structure with compact structure and small occupied area;
2. The input port and the isolation port are arranged on the upper surface of the silicon substrate, and the two output ports are arranged on the lower surface of the silicon substrate, or vice versa, so that the microwave integrated circuit is easily interconnected with other layers or module elements and realizes the three-dimensional integration of a microwave system;
3. the parallel arm adopts two pairs of coupling TSV, so that a weak coupling branch line coupler can be realized;
4. the invention separates the signal line and the silicon substrate by adopting the grounding layer and the grounding shielding ring, has small transmission loss, good electromagnetic isolation between each branch, small electromagnetic radiation and weak coupling noise with other surrounding elements or modules, and simplifies the electromagnetic isolation design in the three-dimensional microwave integrated system.
Drawings
FIG. 1 is a three-dimensional view of an improved branch line coupler based on through-silicon-on-coax (TSV) in accordance with the present disclosure;
FIG. 2 is a cross-sectional view along AA of an improved branch line coupler based on a coaxial through-silicon via according to the present disclosure;
Wherein:
101-top first dielectric layer 102-top ground shield ring
103-top first signal interconnect stud 104-top ground stud
105-top ground plane 106-top dielectric ring
107-top second signal interconnect stud 108-top second dielectric layer
109-top third signal interconnect stud 110-top port signal line
111-top signal line 201-silicon substrate
202-first dielectric ring 203-ground shield ring
204-second dielectric Ring 205-post Signal interconnect post
206-front signal interconnect pillar 301-bottom first dielectric layer
302-bottom ground shield ring 303-bottom first signal interconnect stud
304-bottom ground stud 305-bottom ground plane
306-bottom dielectric ring 307-bottom second signal interconnect pillar
308-bottom layer second dielectric layer 309-bottom layer third signal interconnect pillar
310-bottom port signal line 311-bottom signal line
The specific implementation mode is as follows:
The following describes in detail specific embodiments of the present invention.
For convenience of description, the terms "upper", "lower", "left" and "right" are used in the same direction as the top, bottom, left and right of the drawings, but do not limit the structure of the present invention.
detailed description of the preferred embodiment 1
As shown in fig. 1 and 2, an improved branch line coupler based on a coaxial through silicon via includes a top layer module, a silicon substrate layer module, and a bottom layer module, where the top layer module is disposed on an upper surface of the silicon substrate layer module, and the bottom layer module is disposed on a lower surface of the silicon substrate layer module;
The top module comprises a top first dielectric layer 101, a top ground shield ring 102, a top first signal interconnection column 103, a top ground column 104, a top ground layer 105, a top dielectric ring 106, a top second signal interconnection column 107, a top second dielectric layer 108, a top third signal interconnection column 109, a top port signal line 110 and a top signal line 111;
The silicon substrate layer module comprises a silicon substrate 201, a first dielectric ring 202, a ground shielding ring 203, a second dielectric ring 204, a rear signal interconnection column 205 and a front signal interconnection column 206;
The bottom module comprises a bottom first dielectric layer 301, a bottom ground shield ring 302, a bottom first signal interconnection column 303, a bottom ground column 304, a bottom ground layer 305, a bottom dielectric ring 306, a bottom second signal interconnection column 307, a bottom second dielectric layer 308, a bottom third signal interconnection column 309, a bottom port signal line 310 and a bottom signal line 311;
Two top layer port signal lines 110 which are symmetrically distributed along the central line of the coupler in a left-right axial mode are arranged on the left side and the right side of the top layer signal line 111, the two top layer port signal lines 110 are sequentially connected with the top layer signal line 111, and the length of the top layer signal line 111 is 1/4 wavelengths;
The top layer second dielectric layer 108 is provided with two top layer third signal interconnection columns 109 which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
the top ground layer 105 is provided with two top second signal interconnection columns 107 which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a top dielectric ring 106 is arranged between the top ground layer 105 and the top second signal interconnection columns 107;
the top ground layer 105, the top second dielectric layer 108 and the top port signal line 110 form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
the top-layer first dielectric layer 101 is provided with two top-layer grounding shielding rings 102 which are symmetrically distributed along the center line of the coupler in a left-right axial manner, a top-layer first signal interconnection column 103 is arranged at the rear part of the center of each top-layer grounding shielding ring 102, a top-layer grounding column 104 is arranged at the front part of the center of each top-layer grounding shielding ring 102, and the two top-layer first signal interconnection columns 103 and the two top-layer grounding columns 104 are symmetrical about the center of the coupler;
The silicon substrate 201 is provided with two grounding shielding rings 203 which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a first dielectric ring 202 is arranged between the outer side of the grounding shielding ring 203 and the silicon substrate 201;
A rear signal interconnection column 205 is arranged at the central rear part of each ground shielding ring 203, a front signal interconnection column 206 is arranged at the central front part of each ground shielding ring 203, the two rear signal interconnection columns 205 and the two front signal interconnection columns 206 are symmetrical about the center of the coupler, and a second dielectric ring 204 is arranged among the rear signal interconnection columns 205, the front signal interconnection columns 206 and the ground shielding ring 203;
The rear signal interconnection column 205, the front signal interconnection column 206 and the ground shield ring 203 form a coupled transmission line structure, and the length of the coupled transmission line structure is 1/4 wavelengths;
the bottom layer first dielectric layer 301 is provided with two bottom layer grounding shielding rings 302 which are symmetrically distributed along the center line of the coupler in a left-right axial manner, a bottom layer first signal interconnection column 303 is arranged at the rear part of the center of each bottom layer grounding shielding ring 302, a bottom layer grounding column 304 is arranged at the front part of the center of each bottom layer grounding shielding ring 302, and the two bottom layer first signal interconnection columns 303 and the two bottom layer grounding columns 304 are symmetrical about the center of the coupler;
the bottom ground layer 305 is provided with two bottom second signal interconnection columns 307 which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a bottom dielectric ring 306 is arranged between the bottom ground layer 305 and the bottom second signal interconnection columns 307;
the bottom layer second dielectric layer 308 is provided with two bottom layer third signal interconnection columns 309 which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
two bottom signal lines 310 which are symmetrically distributed along the central line of the coupler in a left-right axial mode are arranged on the left side and the right side of the bottom signal line 311, the two bottom signal lines 310 are sequentially connected with the bottom signal line 311, and the length of the bottom signal line 311 is 1/4 wavelengths;
The bottom ground layer 305, the bottom second dielectric layer 308 and the bottom port signal line 310 form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
The top signal line 111, the top third signal interconnection column 109, the top second signal interconnection column 107, the top first signal interconnection column 103, the rear signal interconnection column 205, the bottom ground column 304 and the bottom ground layer 305 are sequentially connected from top to bottom;
The bottom signal line 311, the bottom third signal interconnection column 309, the bottom second signal interconnection column 307, the bottom first signal interconnection column 303, the front signal interconnection column 206, the top ground column 104 and the top ground layer 105 are sequentially connected from bottom to top;
the top ground layer 105, the top ground shield ring 102, the ground shield ring 203, the bottom ground shield ring 302 and the bottom ground layer 305 are sequentially connected from top to bottom;
The top second dielectric layer 108, the top dielectric ring 106, the top first dielectric layer 101, the second dielectric ring 204, the bottom first dielectric layer 301, the bottom dielectric ring 306 and the bottom second dielectric layer 308 are sequentially connected from top to bottom;
the top first dielectric layer 101, the first dielectric ring 202 and the bottom first dielectric layer 301 are sequentially connected from top to bottom.
further, the centers of the top layer ground shield ring 102, the ground shield ring 203 and the bottom layer ground shield ring 302 are located on the same straight line.
further, the centers of the top third signal interconnection column 109, the top second signal interconnection column 107, the top dielectric ring 106, the top first signal interconnection column 103, the rear signal interconnection column 205 and the bottom ground column 304 are located on the same straight line.
further, the centers of the bottom third signal interconnection column 309, the bottom second signal interconnection column 307, the bottom dielectric ring 306, the bottom first signal interconnection column 303, the front signal interconnection column 206 and the top ground column 104 are located on the same straight line.
Further, the improved branch line coupler based on the coaxial through silicon via is symmetrical to the left and right.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top port signal line 110, the top signal line 111, the bottom port signal line 310 and the bottom signal line 311 are copper lines;
The top ground layer 105 and the bottom ground layer 305 are copper layers.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top third signal interconnection column 109, the top second signal interconnection column 107, the top first signal interconnection column 103, the top ground column 104, the rear signal interconnection column 205, the front signal interconnection column 206, the bottom ground column 304, the bottom first signal interconnection column 303, the bottom second signal interconnection column 307, and the bottom third signal interconnection column 309 are copper columns.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top layer ground shield ring 102, the ground shield ring 203 and the bottom layer ground shield ring 302 are copper rings.
as a preferred solution of the improved branch line coupler based on the coaxial through silicon via in the present invention: the top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, and the bottom second dielectric layer 308 are silicon dioxide layers, silicon nitride layers, or benzocyclobutene layers, and the top dielectric ring 106, the first dielectric ring 202, the second dielectric ring 204, and the bottom dielectric ring 306 are silicon dioxide rings.
Specific example 2
substantially the same as in example 1, except that:
The top port signal line 110, the top signal line 111, the bottom port signal line 310 and the bottom signal line 311 are silver lines; the top ground layer 105 and the bottom ground layer 305 are silver layers.
Top third signal interconnect stud 109, top second signal interconnect stud 107, top first signal interconnect stud 103, top ground stud 104, rear signal interconnect stud 205, front signal interconnect stud 206, bottom ground stud 304, bottom first signal interconnect stud 303, bottom second signal interconnect stud 307, and bottom third signal interconnect stud 309 are silver studs.
the top layer ground shield ring 102, the ground shield ring 203, and the bottom layer ground shield ring 302 are silver rings.
The top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, and the bottom second dielectric layer 308 are silicon dioxide layers, silicon nitride layers, or benzocyclobutene layers, and the top dielectric ring 106, the first dielectric ring 202, the second dielectric ring 204, and the bottom dielectric ring 306 are silicon nitride rings.
Specific example 3
substantially the same as in example 1, except that:
The top third signal interconnection column 109, the top second signal interconnection column 107, the top first signal interconnection column 103, the top ground column 104, the rear signal interconnection column 205, the front signal interconnection column 206, the bottom ground column 304, the bottom first signal interconnection column 303, the bottom second signal interconnection column 307, and the bottom third signal interconnection column 309 are tungsten columns.
the top layer ground shield ring 102, the ground shield ring 203, and the bottom layer ground shield ring 302 are tungsten rings.
The top second dielectric layer 108, the top first dielectric layer 101, the bottom first dielectric layer 301, and the bottom second dielectric layer 308 are silicon dioxide layers, silicon nitride layers, or benzocyclobutene layers, and the top dielectric ring 106, the first dielectric ring 202, the second dielectric ring 204, and the bottom dielectric ring 306 are benzocyclobutene rings.
specific example 4
Substantially the same as in example 1, except that:
The top third signal interconnection column 109, the top second signal interconnection column 107, the top first signal interconnection column 103, the top ground column 104, the rear signal interconnection column 205, the front signal interconnection column 206, the bottom ground column 304, the bottom first signal interconnection column 303, the bottom second signal interconnection column 307, and the bottom third signal interconnection column 309 are polysilicon columns.
The top layer ground shield ring 102, the ground shield ring 203, and the bottom layer ground shield ring 302 are polysilicon rings.
the embodiments of the present invention have been described in detail. However, the present invention is not limited to the above-described embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Claims (9)
1. An improved branch line coupler based on a coaxial through silicon via is characterized by comprising a top layer module, a silicon substrate layer module and a bottom layer module, wherein the top layer module is arranged on the upper surface of the silicon substrate layer module, and the bottom layer module is arranged on the lower surface of the silicon substrate layer module;
The top module comprises a top first dielectric layer, a top ground shield ring, a top first signal interconnection column, a top ground layer, a top dielectric ring, a top second signal interconnection column, a top second dielectric layer, a top third signal interconnection column, a top port signal line and a top signal line;
the silicon substrate layer module comprises a silicon substrate, a first dielectric ring, a grounding shielding ring, a second dielectric ring, a rear signal interconnection column and a front signal interconnection column;
The bottom module comprises a bottom first dielectric layer, a bottom ground shield ring, a bottom first signal interconnection column, a bottom ground layer, a bottom dielectric ring, a bottom second signal interconnection column, a bottom second dielectric layer, a bottom third signal interconnection column, a bottom port signal line and a bottom signal line;
Two top layer port signal lines which are symmetrically distributed along the central line of the coupler in a left-right axial mode are arranged on the left side and the right side of the top layer signal line, the two top layer port signal lines are sequentially connected with the top layer signal line, and the length of the top layer signal line is 1/4 wavelengths;
The top layer second medium layer is provided with two top layer third signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
the top ground layer is provided with two top second signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a top dielectric ring is arranged between the top ground layer and the top second signal interconnection columns;
the top grounding layer, the top second dielectric layer and the top port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
the top layer first dielectric layer is provided with two top layer grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, a top layer first signal interconnection column is arranged at the rear part of the center of each top layer grounding shielding ring, a top layer grounding column is arranged at the front part of the center of each top layer grounding shielding ring, and the two top layer first signal interconnection columns and the two top layer grounding columns are symmetrical about the center of the coupler;
the silicon substrate is provided with two grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, and a first medium ring is arranged between the outer side of each grounding shielding ring and the silicon substrate;
a rear signal interconnection column is arranged at the rear part of the center of each grounding shielding ring, a front signal interconnection column is arranged at the front part of the center of each grounding shielding ring, the two rear signal interconnection columns and the two front signal interconnection columns are symmetrical about the center of the coupler, and a second dielectric ring is arranged among the rear signal interconnection column, the front signal interconnection column and the grounding shielding ring;
the rear signal interconnection column, the front signal interconnection column and the grounding shielding ring form a coupling transmission line structure, and the length of the coupling transmission line structure is 1/4 wavelengths;
the bottom layer first dielectric layer is provided with two bottom layer grounding shielding rings which are symmetrically distributed along the center line of the coupler in a left-right axial mode, a bottom layer first signal interconnection column is arranged at the rear part of the center of each bottom layer grounding shielding ring, a bottom layer grounding column is arranged at the front part of the center of each bottom layer grounding shielding ring, and the two bottom layer first signal interconnection columns and the two bottom layer grounding columns are symmetrical about the center of the coupler;
the bottom grounding layer is provided with two bottom second signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner, and a bottom medium ring is arranged between the bottom grounding layer and the bottom second signal interconnection columns;
the bottom layer second medium layer is provided with two bottom layer third signal interconnection columns which are symmetrically distributed along the center line of the coupler in a left-right axial manner;
two bottom layer port signal lines which are symmetrically distributed along the center line of the coupler in a left-right axial mode are arranged on the left side and the right side of the bottom layer signal line, the two bottom layer port signal lines are sequentially connected with the bottom layer signal line, and the length of the bottom layer signal line is 1/4 wavelengths;
the bottom grounding layer, the bottom second dielectric layer and the bottom port signal line form a microstrip transmission line structure, and the characteristic impedance of the microstrip transmission line structure is 50 ohms;
the top signal line, the top third signal interconnection column, the top second signal interconnection column, the top first signal interconnection column, the rear signal interconnection column, the bottom ground column and the bottom ground layer are sequentially connected from top to bottom;
the bottom signal line, the bottom third signal interconnection column, the bottom second signal interconnection column, the bottom first signal interconnection column, the front signal interconnection column, the top ground column and the top ground layer are sequentially connected from bottom to top;
The top grounding layer, the top grounding shielding ring, the bottom grounding shielding ring and the bottom grounding layer are sequentially connected from top to bottom;
the top layer second dielectric layer, the top layer dielectric ring, the top layer first dielectric layer, the second dielectric ring, the bottom layer first dielectric layer, the bottom layer dielectric ring and the bottom layer second dielectric layer are sequentially connected from top to bottom;
The top layer first dielectric layer, the first dielectric ring and the bottom layer first dielectric layer are sequentially connected from top to bottom.
2. The improved branch line coupler based on the coaxial through silicon via as claimed in claim 1, wherein centers of the top ground shield ring, the ground shield ring and the bottom ground shield ring are located on a same straight line.
3. the improved branch line coupler based on the coaxial through-silicon-via as claimed in claim 1, wherein centers of the top third signal interconnection column, the top second signal interconnection column, the top dielectric ring, the top first signal interconnection column, the rear signal interconnection column, and the bottom ground column are located on a same straight line.
4. The improved branch line coupler based on the coaxial through silicon via as claimed in claim 1, wherein centers of the bottom third signal interconnection pillar, the bottom second signal interconnection pillar, the bottom dielectric ring, the bottom first signal interconnection pillar, the front signal interconnection pillar, and the top ground pillar are located on a same straight line.
5. The improved coaxial through-silicon-via based branch line coupler of claim 1, wherein the improved coaxial through-silicon-via based branch line coupler is axisymmetric left and right.
6. The improved branch line coupler based on coaxial through silicon vias as claimed in claim 1, wherein the top port signal line, the top signal line, the bottom port signal line, and the bottom signal line are copper lines or silver lines; the top layer grounding layer and the bottom layer grounding layer are copper layers or silver layers.
7. the improved branch line coupler based on the coaxial through-silicon-via of claim 1, wherein the top third signal interconnection pillar, the top second signal interconnection pillar, the top first signal interconnection pillar, the top ground pillar, the rear signal interconnection pillar, the front signal interconnection pillar, the bottom ground pillar, the bottom first signal interconnection pillar, the bottom second signal interconnection pillar, and the bottom third signal interconnection pillar are copper pillars, silver pillars, tungsten pillars, or polysilicon pillars.
8. The improved branch line coupler based on the coaxial through silicon via as claimed in claim 1, wherein the top ground shield ring, the ground shield ring, and the bottom ground shield ring are copper ring or silver ring or tungsten ring or polysilicon ring.
9. the improved branch line coupler based on the coaxial through-silicon-via according to claim 1, wherein the top second dielectric layer, the top first dielectric layer, the bottom first dielectric layer, and the bottom second dielectric layer are silicon dioxide layers, silicon nitride layers, or benzocyclobutene layers, and the top dielectric ring, the first dielectric ring, the second dielectric ring, and the bottom dielectric ring are silicon dioxide rings, silicon nitride rings, or benzocyclobutene rings.
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| CN112490610A (en) * | 2020-11-27 | 2021-03-12 | 浙江集迈科微电子有限公司 | Three-dimensional multi-channel power divider for silicon-based radio frequency transceiving micro system and preparation method thereof |
| CN115548621A (en) * | 2022-11-29 | 2022-12-30 | 电子科技大学 | On-chip parallel line coupler based on silicon-based process |
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| CN109546278A (en) * | 2018-10-25 | 2019-03-29 | 西安电子科技大学 | A kind of three-dimensional coupler and preparation method thereof based on through silicon via |
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| US20110049676A1 (en) * | 2009-08-26 | 2011-03-03 | International Business Machines Corporation | Method, structure, and design structure for a through-silicon-via wilkinson power divider |
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| CN112490610A (en) * | 2020-11-27 | 2021-03-12 | 浙江集迈科微电子有限公司 | Three-dimensional multi-channel power divider for silicon-based radio frequency transceiving micro system and preparation method thereof |
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