CN110581197A - 一种可见光与近红外光的双波段光电探测器及其制备方法 - Google Patents
一种可见光与近红外光的双波段光电探测器及其制备方法 Download PDFInfo
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Abstract
本发明属于光电探测器技术领域,具有为一种可见光与近红外光的双波段光电探测器及其制备方法。本发明的可见光与近红外光的双波段光电探测器件,是基于二维过渡金属硫化物TMDCs/铟镓砷/铟铝砷(InGaAs/InAlAs)异质结的,其中,二维TMDCs是可见光敏感层,InGaAs是沟道层,同时也是近红外光敏感层;TMDs与InGaAs为n型掺杂,InAlAs为本征掺杂,TMDCs与InGaAs/InAlAs接触时产生一个没有内建电场的n‑i‑n型异质结。本发明将可见光与近红外光的双波段探测集成于单个器件,与高度成熟的传统三五族半导体器件工艺相兼容,有助于实现高灵敏度,宽探测频谱的光电探测器。
Description
技术领域
本发明属于光电探测器技术领域,具有涉及一种可见光与近红外光的双波段光电探测器及其制备方法。
背景技术
光电探测器是一种将光学信号转换为电学信号的能量转换器件,其在数码摄像、卫星遥感成像、工业自动控制、汽车电子有着十分广泛的用途。但是受限于材料本身的禁带宽度和吸收频谱,一个光电传感器往往只能在某个单一波段产生光电响应,而如果要探测多个波段从而实现24小时监控,则需要在一个成像***中配备基于不同材料的光电传感器,例如用于紫外光的氮化镓基日盲探测器,用于可见光的硅基CMOS与CCD探测器,用于近红外光的InGaAs雪崩二极管等等。采用多个探测器件来成像显而易见的大大增加的成像成本,也对后续的放电处理电路提出了更高的要求,不利于成像***的小型化与低成本化。
大量实验证明,基于InGaAs/InAlAs异质结的高电子迁移率晶体管器件对近红外光有着超高的探测响应度和非常宽的带宽,因此可以用于高速、微弱的近红外信号的灵敏探测,然而传统高电子迁移率晶体管器件由于顶栅金属电极的屏蔽作用,大大减弱了器件本身对正入射近红外光的吸收,因此常用的基于InGaAs/InAlAs异质结的高电子迁移率晶体管红外探测器件往往需要对衬底减薄,从而实现近红外光的背入射,这大大增加了器件制备的成本,也不利于器件本身的散热,因此并未大规模应用于近红外光的探测。
近年来,基于TMDs的可见光波段的探测器件因其高光电响应度被广泛报道。TMDs是一种层与层之间由分子间作用力(范德华力)相结合的材料,其可以与任意体材料之间形成完美的界面,而不需考虑其晶格失配,这不仅减少了材料外延所需的成本,同时也提高了器件的可靠性。
发明内容
本发明的目的在于提出一种可靠性好、成本低的可见光与近红外光的双波段光电探测器及其制备方法。
本发明提出的可见光与近红外光的双波段光电探测器,将二维过渡金属硫化物(TMDCs)的可见光电高敏感性和传统InGaAs/InAlAs异质结的高电子迁移率晶体管器件对近红外光的高灵敏性结合一起,得到基于二维过渡金属硫化物(TMDCs)/铟镓砷/铟铝砷(InGaAs/InAlAs)异质结的可见光与近红外光的双波段光电探测器件;其中,二维TMDCs是作为气体敏感层,SFOI是导电沟道。具体地,二维TMDCs是可见光敏感层,而InGaAs是沟道层,同时也是近红外光敏感层。TMDCs与InGaAs/InAlAs接触时,由于TMDs与InGaAs为n型掺杂,InAlAs为本征掺杂,从而产生一个没有内建电场的n-i-n型异质结。当可见光入射到器件表面时,TMDCs中产生的电子或空穴被顶栅电极收集,从而改变InGaAs/InAlAs中的二维电子气浓度,引起驱动电流的变化。当近红外光入射到器件表面时,光生的电子或者空穴仅在InGaAs沟道层中产生,而TMDs对近红外光不敏感,相当于一个金属电极;由于InGaAs本身的能带弯曲,使器件内部存在自放大效应,从而导致光生电流的增加。
本发明中,InGaAs沟道两端的其中任意一端都与TMDCs之间存在n-i-n结,器件整体上呈现类似一个靠栅极电阻调控的场效应晶体管。
概括而言,所述二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件,只需要采用传统的InGaAs/InAlAs外延材料作为衬底即可。利用TMDs中的顶栅电场对下层InGaAs/InAlAs中的二维电子气浓度的调控作用,从而实现对可见光与近红外光的双波段探测。
本发明提供的基于二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件的制备方法,具体步骤包括:
(1)将InGaAs/InAlAs外延材料作为衬底;
(2)将所述InGaAs/InAlAs形成图形结构,去除沟道区域外的半导体薄膜层,形成电学隔离台面;
(3)在所述InGaAs/InAlAs图形结构表面形成源漏电极层;
(4)将二维TMDCs薄膜直接生长或者转移至所述InAlAs图形结构表面,以覆盖所述半导体薄膜导电沟道;
(5)在所述TMDs末端形成栅电极层。
优选地,所述InGaAs/InAlAs材料利用分子数外延或者金属化学气相淀积技术制备得到,以InP,GaAs中的任意一种或者它们组成的复合结构作为衬底。
优选地,所述InGaAs/InAlAs材料利用分子数外延或者金属化学气相淀积技术制备得到,以InAs,AlAs中的任意一种或者它们组成的复合结构作为生长缓冲层。
优选地,所述InGaAs/InAlAs材料利用分子数外延或者金属化学气相淀积技术制备得到,以InAs,GaAs中的任意一种或者它们组成的复合结构作为帽层,其浓度为1019-1020cm-3。
优选地,所述InGaAs/InAlAs材料中的沟道层与势垒层分别为InGaAs与InAlAs,其中InAs,AlAs,GaAs的组分任意可调。
优选地,所述InAlAs势垒层原为本征掺杂,中间部分***一层n型掺杂,浓度为1019-1020 cm-3,掺杂厚度1-2 nm,原InAlAs势垒层厚度8-20 nm。
优选地,将所述层状材料形成电学隔离结构,具体方法为:
基于所述InGaAs/InAlAs衬底材料表面形成光刻胶,藉由一预设有版图的光掩膜对所述光刻胶层曝光,之后显影,图形化所述光刻胶;
以所述图形化光刻胶作为掩模,采用干法刻蚀或者湿法腐蚀,去除缓冲层上的未被光刻胶保护的半导体薄膜层,形成暴露绝缘体层的开口,以得到台面图形结构,之后去除光刻胶。
优选地,在所述半导体薄膜图形结构表面形成源漏电极,具体方法为:
在所述半导体薄膜图形结构表面形成光刻胶,藉由一预设有版图的光掩膜对所述光刻胶层曝光,之后显影,图形化所述光刻胶;
以所述图形化光刻胶作为掩模,采用物理气相沉积方法沉积金属,之后去除光刻胶,形成金属电极;
所述金属电极材料选自Au、Pt、Ni、Ti、Cr等单质金属以及导电性硅化物、氮化物、碳化物等中的一种或两种及两种以上的合金或叠层中的任意一种,电极材料厚度为20 -1000nm。
优选地,在所述半导体薄膜图形结构表面形成栅极凹槽,具体方法为:
在所述半导体薄膜图形结构表面形成光刻胶,藉由一预设有版图的光掩膜对所述光刻胶层曝光,之后显影,图形化所述光刻胶;
以所述图形化光刻胶作为掩模,采用干法刻蚀或者湿法腐蚀帽层,去除未被光刻胶保护的半导体薄膜层,形成暴露绝缘体层的开口,以得到栅极凹槽,之后再去除光刻胶。
优选地,将二维TMDCs薄膜直接生长或者转移至所述半导体薄膜图形结构表面,以覆盖所述半导体薄膜导电沟道,具体方法为:
采用化学气相沉积、原子层沉积等方法直接在InAlAs势垒层表面形成二维TMDCs薄膜;
另一方面,以PMMA(聚甲基丙烯酸甲酯)、PDMS(聚二甲基硅氧烷)等聚合物材料为媒介,将生长好的二维TMDCs薄膜转移至InAlAs势垒层表面;
所述二维TMDCs薄膜为MoS2、MoSe2、WS2、WSe2中的其中一种以及它们的合金中的任一种,二维TMDCs薄膜厚度0.6-100 nm。
优选地,于所述二维TMDCs薄膜末端形成源漏电极,具体方法为:
在所述半导体薄膜图形结构表面形成光刻胶,藉由一预设有版图的光掩膜对所述光刻胶层曝光,之后显影,图形化所述光刻胶;
以所述图形化光刻胶作为掩模,采用物理气相沉积方法沉积金属,之后去除光刻胶,形成金属电极;
所述金属电极材料选自Au、Pt、Ni、Ti、Cr等单质金属以及导电性硅化物、氮化物、碳化物等中的一种或两种及两种以上的合金或叠层中的任意一种,电极材料厚度为20 -1000nm。
本发明中,二维过渡金属硫化物(TMDCs)可以与任意体材料之间形成完美的界面,而不需考虑其晶格失配,可减少材料外延所需的成本,同时提高器件的可靠性。本发明将可见光与近红外光的双波段探测集成于单个器件,与高度成熟的传统三五族半导体器件工艺相兼容,有助于实现高灵敏度,宽探测频谱的光电探测器。
附图说明
图1为本发明提供的一种基于二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件的结构示意图。
图2为本发明提供的一种基于二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件的制备方法的流程示意图。
图中标号:101为初始材料,101-1为InP衬底,101-2 为InAlAs缓冲层,101-3 为InGaAs沟道层,101-4 为InAlAs势垒层,101-5为InAlAs势垒层中的重掺杂区,101-6为InGaAs帽层;201 为金属源漏电极,301 为二维TMDCs,401为金属栅电极。
具体实施方式
以下结合附图通过特定的实施例说明本发明的实施方式。附图仅仅是本发明的一些实施例,对于本领域的普通技术人员,在不付出创造性劳动的前提下,还可以根据这些附图获得其他附图。另外,不同的具体实施方式在没有背离本发明的精神下进行各种修饰或改变,从而加以实施或应用。
图1 本发明提供的基于二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件的结构示意图,具体制备流程如图2所示。需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,图示中仅显示与本发明中有关的组件而非按照实际实施是的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例皆可改变,且组件的布局型态也可能更为复杂。
如图1所示,基于二维过渡金属硫化物/铟镓砷/铟铝砷异质结的可见光与近红外光的双波段光电探测器件,至少包括:沟道层101-3,同时作为近红外光吸收层;势垒层101-4;金属电极层201;二维TMDCs层301,同时作为栅极与可见光敏感层。
如图2所示,基于TMDCs-SFOI异质结的气体传感器的制备方法,包括:
步骤S1,提供初始材料101。所述材料101利用分子数外延或者化学气相淀积,由衬底101-1至InGaAs帽层101-6共同构成;
衬底层101-1为InP,GaAs等中的任意一种或者它们组成的复合结构;
缓冲层101-2为由InAs,AlAs二元化合物构成的三元化合物半导体,其组分任意可调,厚度为100 nm-2000 nm;
沟道层101-3为由InAs,GaAs的二元化合物构成的三元化合物半导体,其组分任意可调,厚度为10 nm-30 nm;
势垒层101-4为由InAs,AlAs的二元化合物构成的三元化合物半导体,其组分任意可调,厚度为8 nm-20 nm;
势垒层中的掺杂区域101-5的掺杂浓度为1019 cm-3到1020cm-3,掺杂厚度为1 nm至3nm,掺杂区域在101-4中任意可调;
帽层101-6为由InAs,GaAs的二元化合物构成的三元化合物半导体,其组分任意可调,厚度为20 nm-30 nm,掺杂浓度1019 cm-3到1020cm-3。
步骤S2,将101形成台面结构,去101-3至101-6,形成电学隔离,具体为:
步骤S201,清洗初始材料并烘干;
步骤S202,旋涂HMDS(六甲基二硅胺)作为粘附层,先500转/分钟5 s,接着4000转/分钟旋涂60 s;
步骤S203,旋涂AZ5214光刻胶,先500转/分钟匀胶5 s,接着4000转/分钟旋涂60 s,形成约1500 nm厚光刻胶膜层,之后100 ℃烘干2 min;
步骤S204,光刻,藉由一预设有版图的光掩膜对光刻胶曝光,曝光剂量60mJ/cm2,显50s后立即在大量去离子水中定影,从而在光刻胶上形成图形结构;
步骤S205,后烘坚膜,180 ℃烘干1 min;
步骤S206,磷酸/双氧水/水的腐蚀液中腐蚀60s后用去离子水清洗;腐蚀液的配比为3:1:50;
步骤S207,丙酮中去胶,形成电学隔离结构。
步骤S3,于所述帽层101-6图形结构表面形成电极层201,具体为:
所述金属电极材料为Au、Pt、Ni、Ti、Cr等单质金属以及导电性硅化物、氮化物、碳化物等中的一种或两种及两种以上的合金或叠层中的任意一种;
本实施例中,选用Ti/Au金属叠层作为电极层201;
步骤S301,101-6图形结构表面旋涂AZ5214光刻胶,先500转/分钟匀胶5 s,接着4000转/分钟旋涂60 s,形成约1500 nm厚光刻胶膜层,之后95℃烘干2 min;
步骤S302,光刻,藉由一预设有版图的光掩膜对光刻胶曝光,曝光剂量40mJ/cm2,显20s后立即在大量去离子水中定影,从而在光刻胶上形成图形结构;
步骤S303,样品放入热蒸发镀膜机中抽真空,之后沉积10 nm Ti与200 nm Au叠层;
步骤S304,丙酮中去胶,形成电极层201。
步骤S4,栅极凹槽腐蚀
步骤S401,101-6图形结构表面旋涂AZ5214光刻胶,先500转/分钟匀胶5 s,接着4000转/分钟旋涂60 s,形成约1500 nm厚光刻胶膜层,之后95 ℃烘干2 min;
步骤S302,光刻,藉由一预设有版图的光掩膜对光刻胶曝光,曝光剂量40 mJ/cm2,显20s后立即在大量去离子水中定影,从而在光刻胶上形成图形结构;
步骤S403,后烘坚膜,180 ℃烘干1 min;
步骤S404,柠檬酸/双氧水的腐蚀液中腐蚀60 s后用去离子水清洗;腐蚀液的配比为1:1;
步骤S405,丙酮中去胶,形成栅下凹槽结构。
步骤S5,将二维TMDCs薄膜301转移至所述101-4图形结构表面,作为可见光敏感层,具体为:
所述二维TMDCs薄膜为MoS2、MoSe2、WS2、WSe2中的其中一种以及它们的合金中的任一种;
本实施例中,选用少层(2-10层)MoS2薄膜作为可见光敏感层301;
步骤S501,将PDMS膜粘附在透明载玻片上,之后采用微机械剥离法将MoS2薄膜301转移至PDMS表面,形成MoS2/PDMS/载玻片叠层结构;
步骤S502,在显微镜下将MoS2/PDMS/载玻片叠层结构中MoS2薄膜301一面对准101-4中间,压实使之贴紧;
步骤S503,将转移台面加热至70 ℃,PDMS膜自动脱落,MoS2薄膜301转移至101-4导电沟道中间,形成可见光敏感层。
步骤S6,形成栅极电极层401,具体为:
所述金属电极材料为Au、Pt、Ni、Ti、Cr等单质金属以及导电性硅化物、氮化物、碳化物等中的一种或两种及两种以上的合金或叠层中的任意一种;
本实施例中,选用Ti/Au金属叠层作为栅电极层401;
步骤S601, 101-6图形结构表面旋涂AZ5214光刻胶,先500转/分钟匀胶5 s,接着4000转/分钟旋涂60 s,形成约1500 nm厚光刻胶膜层,之后95 ℃烘干2 min;
步骤S602,光刻,藉由一预设有版图的光掩膜对光刻胶曝光,曝光剂量40 mJ/cm2,显20s后立即在大量去离子水中定影,从而在光刻胶上形成图形结构;
步骤S603,样品放入热蒸发镀膜机中抽真空,之后沉积10 nm Ti与200 nm Au叠层;
步骤S604,丙酮中去胶,形成电极层401。
上述实施例仅列示性说明本发明的原理及功效,而非用于限制本发明。任何熟悉此项技术的人员均可在不违背本发明的精神及范围下,对上述实施例进行修改。因此,本发明的权利保护范围,应如权利要求书所列。
Claims (8)
1. 一种可见光与近红外光的双波段光电探测器件,其特征在于,是基于二维TMDCs/InGaAs/InAlAs异质结的可见光与近红外光的双波段光电探测器件;其中,二维TMDCs是可见光敏感层,InGaAs是沟道层,同时也是近红外光敏感层;TMDs与InGaAs为n型掺杂,InAlAs为本征掺杂,TMDCs与InGaAs/InAlAs接触时,产生一个没有内建电场的n-i-n型异质结;当可见光入射到器件表面时,TMDCs中产生的电子或空穴被顶栅电极收集,从而改变InGaAs/InAlAs中的二维电子气浓度,引起驱动电流的变化;当近红外光入射到器件表面时,光生的电子或者空穴仅在InGaAs沟道层中产生,而TMDs对近红外光不敏感,相当于一个金属电极,由于InGaAs本身的能带弯曲,器件内部存在自放大效应,从而导致光生电流的增加。
2.根据权利要求1所述的可见光与近红外光的双波段光电探测器件,其特征在于,InGaAs沟道两端中任意一端都与TMDCs之间存在n-i-n结,器件整体上呈现类似一个靠栅极电阻调控的场效应晶体管。
3.如权利要求1所述的可见光与近红外光的双波段光电探测器件的制备方法,其特征在于,具体步骤为:
(1)将InGaAs/InAlAs外延材料作为衬底;
(2)将所述InGaAs/InAlAs形成图形结构,去除沟道区域外的半导体薄膜层,形成电学隔离台面;
(3)在所述InGaAs/InAlAs图形结构表面形成源漏电极层;
(4)将二维TMDCs薄膜直接生长或者转移至所述InAlAs图形结构表面,以覆盖所述半导体薄膜导电沟道;
(5)在所述TMDs末端形成栅电极层。
4.根据权利要求2所述的制备方法,其特征在于,所述InGaAs/InAlAs材料利用分子束外延或者金属化学气相外延制备得到,以InP、GaAs、InAlAs、InGaAs中的任意一种或者它们组成的复合结构作为衬底,同时也作为初始材料的缓冲层与帽层。
5.根据权利要求2所述的制备方法,其特征在于,所述InGaAs沟道层与InAlAs势垒层中的InAs、GaAs、AlAs组分任意可调。
6. 根据权利要求2所述的制备方法,其特征在于,所述InGaAs沟道层为本征或轻掺杂,掺杂浓度为1014-1018 cm-3,InGaAs沟道层厚度5-30 nm。
7. 根据权利要求2所述的制备方法,其特征在于,所述InAlAs势垒层原为本征掺杂,中间任意位置***一层n型掺杂,浓度为1019-1020 cm-3,掺杂厚度1-2 nm,原InAlAs势垒层厚度8-20 nm。
8. 根据权利要求2所述的制备方法,其特征在于,所述二维TMDCs薄膜为MoS2、MoSe2、WS2、WSe2中的其中一种,以及它们的合金中的任一种,二维TMDCs薄膜厚度0.6-100 nm。
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