CN110571309B - 一种去除Poly绕镀清洗方法 - Google Patents
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Abstract
本发明公开了一种新型去除poly绕镀的清洗方法,该清洗方法中从上料到下料工艺步骤都在链式机台上进行操作,且尤其涉及清洗工艺步骤正面刻蚀采用HF/HNO3药液低温刻蚀,温度10‑20℃,HF/HNO3/H2O体积比1:10:13—1:12:15;通过HNO3在硅片表面生成氧化层,再使用HF将绕镀区域去除;碱洗采用KOH/H2O药液质量配比1:15—1:20;酸洗首先采用O3/HF/HCl,其中O3浓度15‑30ppm,HF/HCl体积比1:1—2:5;酸洗第2步工艺采用HF/HCl药液,最后清洁脱水烘干处理。本发明采用清洗工艺,进而降低设备成本的投入,提高产能及良率。
Description
技术领域
本发明属于太阳能光伏行业领域,尤其涉及P型晶体硅TOPCon工艺中的一种的去除Poly绕镀清洗方法。
背景技术
背景技术描述段落清洁能源成为了当前时代发展的必然趋势。对于太阳能电池行业,目前已大批量量产的技术是高效晶硅钝化发射极和背面电池,即PERC(PassivatedEmitterand Rear Cell)电池。可量产达到的效率也仅22%,遇到了效率的瓶颈阶段。随着各家公司追求高效电池,在现有的PERC技术上将前表面场进行钝化处理,也即进行多晶硅掺杂的选择性发射极工艺(简称P-TOPCon)。P-TOPCon工艺中涉及到背面钝化,可大幅度提高电池效率,这也是今后电池发展必然的趋势。进而引入了新的名词,遂穿氧化钝化也即poly钝化。然而此技术存在一定的缺陷——绕镀,如无法去除绕镀,不仅影响了外观而且直接影响了电池片的电性能。目前常规的绕镀清洗工艺流程为Poly生长→背面氮化硅→去除正面氮化硅→TMAH抛光→HF清洗。额外增加了镀膜设备对背面制作氮化硅作为掩膜层,进入链式BSG/PSG机台使用10%-15%浓度的HF单面去出正面氮化硅膜,再进入槽式机台利用TMAH与抛光添加剂在80℃温度进行正面抛光,通过5%-8%的HF浓度进行BSG、PSG的去除。其不仅产能较低,成本较高,且不适用于大批量量产。该常用的清洗工艺主要是在生长poly之前先进行生长正面掩膜层,然后通过四甲基氢氧化铵(TMAH)抛光液将绕镀清洗掉。此工艺方式仅适合研发小批量进行,对于大规模量产而言其能耗高,作业流程长,不适合批量生产。
本发明采用刻蚀清洗方式,可有效去除poly的绕镀并且保护正面B扩面。此工艺具有兼顾产线的机台,无需额外投资且产能高,工艺流程短,能耗少,有效的提高了生产良率和质量等特点。
发明内容
本发明公开了一种去除poly绕镀的清洗方法,其特征在于具体清洗工艺流程步骤为Poly生长→上料→正面刻蚀→碱洗→酸洗1→酸洗2→下料。该清洗方法中从上料到下料工艺步骤都在链式机台上进行操作,且尤其涉及清洗工艺步骤如下:
1)正面刻蚀——采用HF/HNO3药液低温刻蚀,温度控制在10-20℃,HF/HNO3/H2O体积比控制在1:10:13—1:12:15,时间为1-2min;通过HNO3的强氧化性在硅片表面生成氧化层,再通过HF的刻蚀作用将绕镀区域去除,且不损害B结;
2)碱洗——采用KOH/H2O药液质量配比控制在1:15—1:20,时间为0.5-1min,可有效的中和刻蚀液的酸;
3)酸洗1——采用O3/HF/HCl,有效的去除硅片表面的脏污,可得到较好的钝化效果,其中O3浓度控制在15-30ppm,HF/HCl体积比控制在1:1—2:5,时间为0.5-1min;
4)酸洗2——采用HF/HCl药液,其体积比控制在1:1—3:1,时间为1-2min,最后进行硅片表面的清洁及脱水烘干处理。
本发明主要是发明一种去poly绕镀的清洗工艺,进而降低设备成本的投入,提高产能及良率。本发明有以下效果:
1.一台链式清洗机即可解决poly绕镀的问题,无需额外投入节约了成本;
2.poly绕镀的解决有效提高了生产良率及电性能良率,iVOC提升5mV;
3.该种去除Poly绕镀清洗方法可适合于大批量的量产。
附图说明
图1电池片清洗前宏观照片。
图2电池片清洗后宏观照片。
具体实施方式
本具体实施例仅仅是对本发明的解释,其并不是对本发明的限制,本领域技术人员在阅读完本说明书后可以根据需要对本实施例做出没有创造性贡献的修改,但只要在本发明的权利要求范围内都受到专利法的保护。
实施例1
采用本发明去除poly绕镀的清洗方法,其清洗工艺的具体流程如下:Poly生长后进行上料,进入链式机台,首先进行正面刻蚀处理,采用HF/HNO3药液低温刻蚀,温度15℃,HF/HNO3/H2O体积比控制在1:10:15,时间约1min;然后进入碱洗槽,采用KOH/H2O药液配比控制在1:15,时间1min;随后进入酸洗槽1,O3浓度设置为20ppm,HF/HCl体积比控制在1:3.5,时间为0.5min;进入最后一道清洗工序,酸洗槽2,浸入HF/HCl药液中,其体积比控制在2:1,随后进行进行硅片表面的清洁及脱水功能,时间约1-2min。图1为清洗前电池片宏观照片,可见电池片周边绕镀区域含有彩色镀膜。清洗的电池片宏观照片如图2所示,表面绕镀区彩色镀膜不见,表面无明显异常现象。该清洗工艺简单仅需一台链式清洗机即可解决poly绕镀的问题,不增加额外的投入成本,利于大规模的量产。
Claims (1)
1.一种去除poly绕镀的清洗方法,其特征在于具体清洗工艺流程步骤为Poly生长→上料→正面刻蚀→碱洗→酸洗1→酸洗2→下料,其中从上料到下料工艺步骤都在链式机台上进行操作,且尤其涉及清洗工艺步骤如下:
1)正面刻蚀——采用HF/HNO3 药液低温刻蚀,温度控制在10-20℃,HF/HNO3/H2O体积比控制在1:10:13—1:12:15,时间为1-2 min;通过HNO3的强氧化性在硅片表面生成氧化层,再通过HF的刻蚀作用将绕镀区域去除,且不损害B结;
2)碱洗——采用KOH/H2O 药液质量配比控制在 1:15—1:20,时间为0.5-1min,可有效的中和刻蚀液的酸;
3)酸洗1——采用O3/HF/HCl,有效的去除硅片表面的脏污,可得到较好的钝化效果,其中O3浓度控制在15-30ppm,HF/HCl体积比控制在1:1—2:5,时间为0.5-1min;
4)酸洗2——采用HF/HCl药液,其体积比控制在1:1—3:1,时间为1-2min,最后进行硅片表面的清洁及脱水烘干处理。
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