CN110561201B - Method for controlling polishing process and chemical mechanical polishing device - Google Patents
Method for controlling polishing process and chemical mechanical polishing device Download PDFInfo
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- CN110561201B CN110561201B CN201910905009.XA CN201910905009A CN110561201B CN 110561201 B CN110561201 B CN 110561201B CN 201910905009 A CN201910905009 A CN 201910905009A CN 110561201 B CN110561201 B CN 110561201B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
Abstract
The present invention provides a method of controlling a polishing process and a chemical mechanical polishing apparatus, wherein the apparatus comprises: a polishing disk covered with a polishing pad for polishing a wafer; the bearing head is used for holding a wafer and pressing the wafer on the polishing pad; the measuring module is used for acquiring the measuring data of wafer polishing by using an online measuring tool; and the control module is used for correcting the process parameters according to the measurement data before and after the process so as to improve the polishing uniformity.
Description
Technical Field
The invention belongs to the technical field of chemical mechanical polishing, and particularly relates to a method for controlling a polishing process and a chemical mechanical polishing device.
Background
Chemical Mechanical Planarization (CMP) is a global surface Planarization technique used in semiconductor manufacturing processes to reduce the effects of wafer thickness variations and surface topography. Since CMP can precisely and uniformly planarize a wafer to a desired thickness and flatness, it has become one of the most widely used surface planarization techniques in semiconductor manufacturing.
The CMP process is realized by the following steps: the carrier head holds the wafer and rotates and horizontally reciprocates at a certain speed, a certain downward pressure is applied to press the wafer on the rotating polishing pad, polishing solution consisting of submicron or nanometer abrasive particles and chemical solution flows between the wafer and the polishing pad, the polishing solution is uniformly distributed under the action of transmission and rotating centrifugal force of the polishing pad to form a layer of liquid film between the wafer and the polishing pad, chemical components in the liquid chemically react with the wafer to convert insoluble substances into easily soluble substances, then the chemical reactants are removed from the surface of the wafer through micro-mechanical friction of the abrasive particles and dissolved in the flowing liquid to be taken away, namely surface materials are removed in the alternate process of chemical film forming and mechanical film removing to realize surface planarization treatment, so that the aim of global planarization is fulfilled.
With the development of technology, the feature size of devices grown on the surface of a wafer is remarkably reduced, and the control requirement on process errors is more and more strict. At present, the problems of poor effect and low efficiency of the process control of the wafer polishing uniformity need to be solved urgently.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a method for controlling a polishing process and a chemical mechanical polishing apparatus, which are intended to solve at least one of the technical problems in the prior art.
A first aspect of an embodiment of the present invention provides a method of controlling a polishing process, including:
acquiring measurement data of wafer polishing by using an online measurement tool;
the process parameters are corrected based on the measured data before and after the process to improve polishing uniformity.
A second aspect of an embodiment of the present invention provides a chemical mechanical polishing apparatus, including:
a polishing disk covered with a polishing pad for polishing a wafer;
the bearing head is used for holding a wafer and pressing the wafer on the polishing pad;
the measuring module is used for acquiring the measuring data of wafer polishing by using an online measuring tool;
and the control module is used for correcting the process parameters according to the measurement data before and after the process so as to improve the polishing uniformity.
A third aspect of embodiments of the present invention provides a control module, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor implements the steps of the method when executing the computer program.
A fourth aspect of embodiments of the present invention provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, performs the steps of the method as described above.
The invention has the beneficial effects that: the measurement data of wafer polishing is obtained through the online measurement tool, and the process parameters are corrected according to the measurement data before and after the process, so that the polishing uniformity is improved.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic diagram of a chemical mechanical polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a carrier head according to an embodiment of the invention;
fig. 3 is a flowchart illustrating a method according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
In the production of semiconductor chips, in order to research various processes such as ion implantation, film deposition, photolithography, etching, grinding and polishing, on-line detection is generally performed by using a non-pattern silicon wafer-control wafer with low cost. After each process, the control wafer may be damaged to different degrees on the surface, and needs to be subjected to chemical mechanical polishing treatment for reuse.
As shown in fig. 1, the main components of the chemical mechanical polishing apparatus applied to the embodiment of the present invention include a carrier head 10 for holding and rotating a wafer w, a polishing disk 20 covered with a polishing pad 21, a dresser 30 for dressing the polishing pad 21, and a liquid supply portion 40 for supplying a polishing liquid.
In the chemical mechanical polishing process, the carrier head 10 presses the wafer w against the polishing pad 21 covered by the surface of the polishing disk 20, and the carrier head 10 performs a rotating motion and reciprocates in a radial direction of the polishing disk 20 so that the surface of the wafer w contacting with the polishing pad 21 is gradually polished away, and simultaneously the polishing disk 20 rotates, and the liquid supply part 40 sprays polishing liquid onto the surface of the polishing pad 21. Under the chemical action of the polishing liquid, the wafer w is rubbed against the polishing pad 21 by the relative movement of the carrier head 10 and the polishing platen 20 to perform polishing. During polishing, the dresser 30 serves to dress and activate the topography of the polishing pad 21. The use of the dresser 30 can remove foreign particles remaining on the surface of the polishing pad 21, such as abrasive particles in the polishing liquid and waste materials detached from the surface of the wafer w, and can also planarize the surface deformation of the polishing pad 21 due to polishing.
Fig. 2 is a schematic structural diagram of a carrier head 10. The carrier head 10 comprises an upper structure 11 and a lower structure 12, the upper structure 11 being connected to a drive shaft (not shown) of the carrier head, the upper structure 11 and the lower structure 12 being connected by a flexible connection. The substructure 12 includes a gimbal 121, a base 122, an elastic membrane 123, and a retaining ring 124. Both the elastic membrane 123 and the retaining ring 124 are fixed on the lower surface of the base 122, and the annular retaining ring 124 is located outside the elastic membrane 123 and is disposed around the elastic membrane 123. The elastic membrane 123 is used to adsorb and apply a downward pressure to the wafer w, and the elastic membrane 123 may be made of an elastic material, for example, chloroprene or silicone rubber. The retaining ring 124 serves to retain the wafer w under the elastic membrane 123 to prevent the wafer w from slipping out. As shown in fig. 2, the elastic membrane 123 is provided with a plurality of concentric pressure-adjustable chambers therein, and is exemplified by 5 pressure-adjustable chambers in fig. 2, which are respectively a 1 st chamber Z1, a 2 nd chamber Z2, a 3 rd chamber Z3, a 4 th chamber Z4 and a 5 th chamber Z5 concentrically arranged in sequence from the outside to the center. The central 5 th chamber Z5 is circular and the 1 st to 4 th chambers Z1 to Z4 are concentric rings. It is clear that the number of chambers shown in fig. 2 is only an example, and that other numbers, such as 3, 4, 6, 7, 8, etc., are possible in practice.
As shown in fig. 2, the carrier head 10 used in this embodiment has 5 pressure-adjustable chambers at the bottom, so that the pressure applied to each zone on the surface of the wafer w can be adjusted by controlling the pressure in each pressure-adjustable chamber. The internal pressures of the 1 st chamber Z1 through the 5 th chamber Z5 are independent and can be respectively changed, and accordingly, the different chambers of the carrier head 10 divide the surface of the wafer w into a plurality of corresponding partitions, thereby independently adjusting the polishing pressures of the 5 concentric annular regions corresponding to the surface of the wafer w. Each chamber can apply different pressures to the corresponding surface partition of the wafer w, and the application of different pressures to different partitions of the surface of the wafer w can be realized by respectively controlling the pressure of the fluid such as pressurized air supplied to the chamber.
Based on the above description, the embodiments of the present invention provide a method for controlling a polishing process to control process parameters of a CMP process, so as to improve uniformity of wafer polishing.
As shown in fig. 3, a method for controlling a polishing process according to an embodiment of the present invention includes:
step S1, obtaining the wafer polishing measurement data by using an online measurement tool;
in step S2, the process parameters are corrected according to the measured data before and after the process to improve the polishing uniformity.
According to the embodiment of the invention, the measurement data of wafer polishing is obtained through the on-line measurement tool, and the process parameters are corrected according to the measurement data before and after the process, so that the polishing uniformity is improved, the cost can be reduced, and the product yield is increased.
In particular, the in-line measurement tool is a test instrument, such as a four-probe measurement instrument, that measures the thickness of a wafer. Typical measurement data in a CMP process include: and measuring the pre-thickness value and the post-thickness value.
In one embodiment, step S2 includes:
step S21, calculating the removal amount and removal rate of the wafer polishing by using the measurement data;
step S22, obtaining the target polishing time of the wafer to be polished according to the historical removal rate data fed back by the previous wafer polishing and the removal amount of the wafer to be polished;
and step S23, controlling the wafer to be polished to perform polishing within the target polishing time.
The embodiment provides a method for controlling polishing time, which calculates the target polishing time required for polishing the wafer to the target thickness under the current machine and wafer conditions according to historical data. In the production of CMP processes, since the wear of consumables, such as polishing pads, generally decreases as the time of use of the consumables increases, the polishing time needs to be updated in time. The removal amount and the removal rate of the wafer are obtained through measurement and calculation, the target polishing time of the wafer to be polished is obtained by utilizing the historical removal rate data of the previous wafer to be polished and the removal amount of the next wafer to be polished, and the target polishing time is continuously updated, so that the wafer to be polished is controlled to perform polishing according to the updated target polishing time.
In the embodiment, the target polishing time is dynamically adjusted, so that the thickness of the polished wafer reaches or slightly deviates from the expected target thickness, and the uniformity among different wafers is improved.
As one possible embodiment, step S22 includes:
step S221, subtracting the target thickness value from the actual measurement thickness pre-value of the wafer thickness to obtain a target removal amount;
step S222, subtracting the actual measured thickness value of the polished wafer from the actual measured thickness value of the wafer before polishing to obtain the actual removal amount;
step S223, predicting the reference removal rate of the wafer to be polished by combining the historical removal rate data;
in step S224, the target removal amount is divided by the reference removal rate to obtain a target polishing time.
As one possible implementation, step S22 further includes:
step S225, dividing the actual removal amount of the current wafer by the target polishing time to obtain an actual removal rate;
step S226, add the actual removal rate of the current wafer to the historical removal rate data, and calculate and update the reference removal rate according to the preset weight.
Specifically, the calculation process of the target polishing time is implemented using formulas (1) to (6):
Rt＝TKa-TKt；--(1)
RP＝TKa-TKb；--(2)
RRt＝α1·RRn-1+α2·RRn-2+…+αi·RRn-i；--(3)
α1+α2+…+αi＝1；--(4)
wherein, TKaTK as measured thickness precursor valuebTo measure the value after the thickness, TKtIs a target value after thickness, RtFor the target removal amount, RPTo actually remove the amount, RRtFor reference removal rate, TtTo target polishing time, RRnIs the actual removal rate, RR, of the nth wafern-iAlpha is a predetermined weight that is the actual removal rate of the previously polished n-i wafer.
In this embodiment, the removal rates of different wafers are predicted by a feedback and cyclic calculation method, and the target polishing time required for different wafers can be accurately calculated based on the formulas (1) to (6).
The specific implementation flow for controlling the polishing time comprises the following steps: before the wafer starts to be polished, firstly measuring the previous value of the thickness of the wafer by using an online measuring tool to obtain the previous value of the actually measured thickness, and sending the measured data into a control module to substitute the formulas (1) to (6) so as to calculate the target polishing time required by the wafer; then polishing the wafer by a chemical mechanical polishing device according to the target polishing time; after the polished wafer is cleaned and dried, the polished wafer is conveyed to an online measuring tool to measure the thickness of the wafer, and a measured thickness value is obtained, and the control module updates historical data after receiving the fed back value; when the next wafer is polished, the control module calculates the polishing time required for the wafer according to the measured data of the wafer and the stored historical data. Based on the mode, the control module calculates a corresponding target polishing time for each wafer according to the fed back measured value, so that the interference of various changes is reduced, the value of the polished measured thickness after deviating from the target thickness is smaller and smaller or equal to the value of the target thickness after deviating, and the polishing uniformity among different wafers is improved.
In one embodiment, step S2 includes:
step S24, calculating the offset of the removal amount of each subarea on the surface of the wafer by using the measurement data;
and step S25, adjusting the pressure of the corresponding subarea according to the offset.
The carrier head 10 used in this embodiment is a component having a plurality of pressure control regions, and the pressure adjustment of different pressure control regions corresponding to each pressure adjustable chamber of the carrier head 10 may cause the polishing uniformity of the corresponding wafer surface partition to change during the polishing process, so that the pressure adjustment of each pressure adjustable chamber of the carrier head 10 may control the uniformity within the wafer.
As one possible embodiment, step S2 includes:
s26, calculating the difference value of the difference between the thickness of each subarea and the thickness of the reference area relative to a set value;
s27, calculating the offset according to the current difference data obtained by the current polishing and/or the historical difference data obtained by the previous polishing;
s28, obtaining the pressure regulating quantity of the corresponding subarea according to the offset, and regulating the pressure applied to the subarea by the bearing head according to the pressure regulating quantity.
To create a model for controlling the uniformity within a wafer, the wafer is first divided into a plurality of zones, for example, 5, and one zone is set as a reference zone Zi, and the other zones Zj are compared with the reference zone Zi to calculate the offset of the removal amount and adjust the pressure of the corresponding zone with reference to the amount. Wherein i and j are both natural numbers. Illustratively, the reference zone is taken to be Z4, and the other partitions Z1, Z2, Z3, Z5 are all compared to Z4. The thickness of each zone may be taken as the mean of the measurements taken at the plurality of measurement points for that zone.
The pressure adjustment amount corresponding to the offset amount may be acquired by a table lookup in step S28.
In one embodiment, the offset calculation process is implemented using equation (7):
ΔTK＝[TK(a，Zj)-TK(a，Zi)]-[TK(t，Zj)-TK(t，Zi)]；--(7)
wherein, the Delta TK is the offset, the TK(a，Zj)Is the measured thickness pre-value of the j-th sub-area, TK(a，Zi)Is the measured thickness pre-value of the ith sub-zone, TK(t，Zj)Is the target after-thickness value of the j-th partition, TK(t，Zi)Is the target after-thickness value of the ith partition.
The present embodiment calculates the offset using the current difference data obtained by the current polishing.
In another embodiment, the offset calculation process is implemented using equations (8) to (10):
ΔTK′＝[TK(a，Zj)-TK(a，Zi)]-[TK(t，Zj)-TK(t，Zi)]；--(8)
ΔTKn＝β0·ΔTK′n+β1·ΔTK′n-1+…+βm·ΔTK′n-m；--(9)
β0+β1+…+βm＝1；--(10)
wherein, the delta TK' is an offset reference value, and the TK is(a，Zj)Is the measured thickness pre-value of the j-th sub-area, TK(a，Zi)Is the measured thickness pre-value of the ith sub-zone, TK(t，Zj)Is the target after-thickness value of the j-th partition, TK(t，Zi)Is the target after-thickness value of partition i, Δ TKnIs the offset, delta TK ', corresponding to the n-th wafer'nIs an offset reference value, delta TK ', corresponding to the n wafer'n-mIs the offset reference value corresponding to the n-m wafer, and beta is the preset weight.
In this embodiment, the offset is calculated by using the current difference data obtained by the current polishing and the historical difference data obtained by the previous polishing.
The specific implementation process of the subarea pressure regulation comprises the following steps: before the wafer starts to be polished, firstly measuring the previous value of the thickness of the wafer by using an online measuring tool to obtain the previous value of the actually measured thickness, sending the measured data into a control module, and substituting the offset calculated according to the current sent previous value of each subarea of the wafer into a query table by the control module to obtain the pressure of each subarea required by the wafer; the chemical mechanical polishing apparatus then grinds the wafer at the calculated pressure. When the next wafer is polished, the control module calculates the removal deviation value according to the measurement data of the wafer and the previously fed back weight so as to look up the table to obtain the pressure.
In one embodiment, a lookup table is used to obtain the pressure adjustment corresponding to the offset.
Illustratively, one representation of the look-up table is shown in Table 1.
TABLE 1 look-up table
The specific process comprises the following steps: calculating to obtain the offset delta TK of the jth partition of the wafer to be polishedjThen, searching a suitable offset minimum value delta TK in a lookup tableminAnd offset maximum Δ TKmaxInterval to make offset DeltaTKjFalling into the interval, obtaining a piecewise linear relation of a and a TK + b by using the specific values of the offset and the pressure regulating quantity in the interval, and then calculating the offset TKjSubstituting the formula to obtain the pressure regulating quantity delta P of the jth subarea of the wafer to be polishedjThen the current pressure P of the j-th sub-area is determinedjAdding the pressure adjustment amount delta PjObtaining the regulated pressure P 'required by the j-th subarea'j＝Pj+ΔPj。
Wherein coefficients a and b are calculated using the following equation:
for example, assume that the calculation yieldsThe offset of the 1 st zone Z1 of the wafer to be polished is
The segment with sequence number 2 is found to be suitable in table 1, and the piecewise linear relation of the segment is Δ P ═ 0.001 × Δ TK, so the pressure adjustment amount of the 1 st zone Z1 of the wafer to be polished is 0.075 psi.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
An embodiment of the present invention further provides a chemical mechanical polishing apparatus, including:
a polishing pad 20 covered with a polishing pad for polishing a substrate;
a carrier head 10 for holding and pressing a substrate against the polishing pad;
the measuring module is used for acquiring the measuring data of wafer polishing by using an online measuring tool;
and the control module is used for correcting the process parameters according to the measurement data before and after the process so as to improve the polishing uniformity.
An embodiment of the present invention further provides a control module, including: a processor, a memory, and a computer program stored in the memory and executable on the processor. The processor, when executing the computer program, performs the steps in the embodiments as described in the above-mentioned method embodiments, e.g. steps S1 to S2 shown in fig. 3.
The control module refers to a terminal with data processing capability, and includes but is not limited to a computer, a workstation, a server, and even some Smart phones, palm computers, tablet computers, Personal Digital Assistants (PDAs), Smart televisions (Smart TVs), and the like with excellent performance.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc.
The memory may be an internal storage unit of the control module, such as a hard disk or a memory of the control module. The memory may also be an external storage device of the control module, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like, provided on the control module. Further, the memory may also include both an internal storage unit of the control module and an external storage device. The memory is used for storing the computer program and other programs and data required by the control module. The memory may also be used to temporarily store data that has been output or is to be output.
Embodiments of the present invention further provide a computer-readable storage medium, which stores a computer program, and when the computer program is executed by a processor, the computer program implements steps in the embodiments described in the above method embodiments, such as steps S1 to S2 shown in fig. 3.
The computer program may be stored in a computer readable storage medium, which when executed by a processor, may implement the steps of the various method embodiments described above. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like.
In the above embodiments, the description of each embodiment has a respective emphasis, and the embodiments may be combined arbitrarily, and a new embodiment formed by combining the embodiments is also within the scope of the present application. For parts which are not described or illustrated in a certain embodiment, reference may be made to the description of other embodiments.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. A method of controlling a polishing process, comprising:
acquiring measurement data of wafer polishing by using an online measurement tool;
correcting process parameters according to measurement data before and after the process to improve polishing uniformity, specifically comprising: calculating the difference value of the difference between the thickness of each subarea and the thickness of the reference area relative to a set value; calculating the offset according to the current difference data obtained by the current polishing and the historical difference data obtained by the previous polishing; obtaining the pressure regulating quantity of the corresponding subarea according to the offset, and regulating the pressure applied to the subarea by the bearing head according to the pressure regulating quantity;
wherein the calculating the offset comprises:
wherein the content of the first and second substances,
in order to be the offset reference value,
is the measured pre-thickness value of the jth zone,
is the measured pre-thickness value of the ith sub-zone,
is the target post-thickness value for the jth zone,
is the target post-thickness value for the ith zone,
the offset corresponding to the nth wafer,
for the offset reference value corresponding to the nth wafer,
the offset reference value corresponding to the n-m wafer,
is a preset weight.
2. The method of claim 1, wherein said modifying the process parameter based on pre-process and post-process metrology data comprises:
calculating the removal amount and removal rate of the wafer polishing by using the measurement data;
obtaining target polishing time of the wafer to be polished according to historical removal rate data fed back by previous wafer polishing and the removal amount of the wafer to be polished;
and controlling the wafer to be polished to perform polishing of the target polishing time.
3. The method of claim 2, wherein the obtaining a target polishing time comprises:
subtracting the target thickness value from the actual measurement thickness pre-value of the wafer thickness to obtain a target removal amount;
subtracting the actual thickness value of the polished wafer from the actual thickness value of the wafer before polishing to obtain the actual removal amount;
predicting the reference removal rate of the wafer to be polished by combining the historical removal rate data;
the target removal amount is divided by the reference removal rate to obtain a target polishing time.
4. The method of claim 3, further comprising:
dividing the actual removal amount of the current wafer by the target polishing time to obtain an actual removal rate;
and adding the actual removal rate of the current wafer into the historical removal rate data, and calculating and updating the reference removal rate according to the preset weight.
5. The method of claim 4, wherein the obtaining a target polishing time comprises:
wherein the content of the first and second substances,
the pre-value of the measured thickness is obtained,
is the value after the actual measurement of the thickness,
is the value after the target thickness is set,
in order to achieve the target removal amount,
in order to actually remove the amount of the organic solvent,
for the purpose of reference to the removal rate,
in order to target the polishing time,
is the actual removal rate of the nth wafer,
n-th of prior polishingiThe actual removal rate of the wafer,
is a predetermined weight.
6. A chemical mechanical polishing apparatus, comprising:
a polishing disk covered with a polishing pad for polishing a wafer;
the bearing head is used for holding a wafer and pressing the wafer on the polishing pad;
the measuring module is used for acquiring the measuring data of wafer polishing by using an online measuring tool;
the control module is used for correcting process parameters according to measurement data before and after the process so as to improve polishing uniformity, and specifically comprises the following steps: calculating the difference value of the difference between the thickness of each subarea and the thickness of the reference area relative to a set value; calculating the offset according to the current difference data obtained by the current polishing and the historical difference data obtained by the previous polishing; obtaining the pressure regulating quantity of the corresponding subarea according to the offset, and regulating the pressure applied to the subarea by the bearing head according to the pressure regulating quantity;
wherein the calculating the offset comprises:
wherein the content of the first and second substances,
in order to be the offset reference value,
is the measured pre-thickness value of the jth zone,
is the measured pre-thickness value of the ith sub-zone,
is the target post-thickness value for the jth zone,
is the target post-thickness value for the ith zone,
the offset corresponding to the nth wafer,
for the offset reference value corresponding to the nth wafer,
the offset reference value corresponding to the n-m wafer,
is a preset weight.
7. A control module comprising a memory, a processor and a computer program stored in the memory and executable on the processor, the processor implementing the steps of the method according to any one of claims 1 to 5 when executing the computer program.
8. A computer-readable storage medium, characterized in that the computer-readable storage medium stores a computer program which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 5.
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| CN113118965B (en) * | 2019-12-31 | 2022-09-30 | 清华大学 | Substrate loading and unloading control method |
| CN111430230B (en) * | 2020-06-10 | 2020-09-04 | 清华大学 | Substrate thinning method, substrate thinning equipment and operation method thereof |
| CN112077731B (en) * | 2020-09-21 | 2021-08-31 | 北京烁科精微电子装备有限公司 | Grinding control method and system based on shared time |
| CN112936085B (en) * | 2021-02-04 | 2022-09-16 | 华海清科股份有限公司 | Chemical mechanical polishing control method and control system |
| CN113290426B (en) * | 2021-04-15 | 2022-10-21 | 金华博蓝特新材料有限公司 | Method for improving polishing thickness uniformity of wafer |
| CN113192829B (en) * | 2021-05-13 | 2023-04-18 | 上海芯物科技有限公司 | Method, apparatus, device and storage medium for dynamically adjusting wafer polishing time |
| CN113524019A (en) * | 2021-07-27 | 2021-10-22 | 福建北电新材料科技有限公司 | Chemical mechanical polishing method |
| CN114241619B (en) * | 2021-12-03 | 2024-01-09 | 中环领先半导体材料有限公司 | Method for automatically calculating pressurization of polished surface type correction center |
| CN115319637B (en) * | 2022-10-17 | 2023-01-13 | 华海清科股份有限公司 | Polishing method and chemical mechanical polishing equipment |
| CN116604464A (en) * | 2023-07-19 | 2023-08-18 | 合肥晶合集成电路股份有限公司 | Wafer grinding control method and device, computer equipment and storage medium |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001501545A (en) * | 1996-10-04 | 2001-02-06 | オブシディアン，インコーポレイテッド | Method and system for controlling chemical mechanical polishing thickness removal |
| KR100366630B1 (en) * | 2000-09-20 | 2003-01-09 | 삼성전자 주식회사 | Method of controlling wafer polishing time using sample-skip algorithm and method of wafer polishing using the same |
| US6932671B1 (en) * | 2004-05-05 | 2005-08-23 | Novellus Systems, Inc. | Method for controlling a chemical mechanical polishing (CMP) operation |
| JP2007048862A (en) * | 2005-08-09 | 2007-02-22 | Tokyo Seimitsu Co Ltd | Polishing system and method thereof |
| US7115017B1 (en) * | 2006-03-31 | 2006-10-03 | Novellus Systems, Inc. | Methods for controlling the pressures of adjustable pressure zones of a work piece carrier during chemical mechanical planarization |
| US9102033B2 (en) * | 2010-11-24 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for target thickness and surface profile uniformity control of multi-head chemical mechanical polishing process |
| US9296084B2 (en) * | 2012-07-19 | 2016-03-29 | Applied Materials, Inc. | Polishing control using weighting with default sequence |
| CN105773397B (en) * | 2016-03-09 | 2017-09-29 | 天津华海清科机电科技有限公司 | Chemically-mechanicapolish polish multi-region pressure On-line Control algorithm |
| JP6770910B2 (en) * | 2017-02-16 | 2020-10-21 | 株式会社東京精密 | CMP device |
| CN107344327B (en) * | 2017-05-05 | 2019-11-22 | 清华大学 | In the method for improved wire flatness of wafer surface |
| CN110071041B (en) * | 2018-01-22 | 2021-04-27 | 长鑫存储技术有限公司 | Preparation method of shallow trench isolation structure, chemical mechanical polishing method and system |
| CN109585344A (en) * | 2018-12-04 | 2019-04-05 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer removal amount consistency control method and device |
| CN110193776B (en) * | 2019-06-11 | 2020-07-03 | 英特尔半导体(大连)有限公司 | Polishing pressure control method, device and equipment for wafer polishing |
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