CN116604464A - Wafer grinding control method and device, computer equipment and storage medium - Google Patents
Wafer grinding control method and device, computer equipment and storage medium Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000003860 storage Methods 0.000 title claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 376
- 238000013507 mapping Methods 0.000 claims abstract description 62
- 238000004590 computer program Methods 0.000 claims description 22
- 238000012886 linear function Methods 0.000 claims description 7
- 230000001276 controlling effect Effects 0.000 claims description 6
- 230000002596 correlated effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000009467 reduction Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 237
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- 238000001652 electrophoretic deposition Methods 0.000 description 12
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- 229920001345 ε-poly-D-lysine Polymers 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
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- 229910021389 graphene Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The application relates to a wafer grinding control method, a wafer grinding control device, computer equipment and a storage medium. The control method for wafer grinding comprises the following steps: acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground; acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage; and feeding back and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameters, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with consistency conditions, and the target polishing parameters comprise at least one of the first polishing parameters and the second polishing parameters. The method can avoid the reliability reduction of the semiconductor device.
Description
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a method and apparatus for controlling wafer polishing, a computer device, and a storage medium.
Background
Among semiconductor processes, physical vapor deposition (Physical Vapor Deposition, PVD) processes are a very common deposition process commonly used to deposit a metal layer on a wafer surface. PVD processes tend to deposit thicker metal layers in the edge (edge) regions of the wafer than in the middle (center) regions of the wafer due to their processing characteristics. At this time, when the metal layer is polished by a chemical mechanical polishing (ChemicalMechanical Polishing, CMP) process, the Polishing Rate (PR) of the edge area of the wafer is required to be faster. However, the excessive speed of PR may cause excessive grinding of the metal layer at the edge region of the wafer, resulting in dishing (recess) of the metal layer, which may further cause offset of the Overlay mark (OVL) during exposure in the subsequent photolithography process, resulting in open circuit or poor connection of the metal layer, thereby reducing the reliability of the semiconductor device.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a control method, apparatus, computer device, computer-readable storage medium, and computer program product for wafer polishing that can avoid a decrease in reliability of semiconductor devices.
In a first aspect, the present application provides a method for controlling wafer polishing. The method comprises the following steps:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and adjusting the grinding pressure of the edge area of the wafer to be ground according to the first mapping relation and the target grinding parameter in a feedback manner, wherein the grinding characteristics of the preset wafer and the wafer to be ground accord with consistency conditions, and the target grinding parameter comprises at least one of the first grinding parameter and the second grinding parameter.
In one embodiment, the polishing pressure is positively correlated with the polishing rate, wherein the first mapping relationship is characterized by a linear function characterized by the following formula:
wherein Y is the polishing rate, X is the polishing pressure, A is the weight coefficient, and B is the constant.
In one embodiment, the target polishing parameters include the first polishing parameter and the second polishing parameter, where the first polishing parameter includes a first polishing duration of a full polishing stage for polishing a center region of the preset wafer, the second polishing parameter includes a second polishing duration of a full polishing stage for polishing an edge region of the preset wafer, and the adjusting the polishing pressure of the edge region of the wafer to be polished according to the first mapping relationship and the target polishing parameter includes:
acquiring a grinding time difference according to the first grinding time length and the second grinding time length;
and feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length and the first mapping relation.
In one embodiment, the feedback adjusting the polishing pressure of the wafer edge area to be polished according to the polishing time difference and the first mapping relation includes:
determining the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length, the weight coefficient and the constant; wherein the polishing pressure of the wafer edge area to be polished is inversely related to the weight coefficient.
In one embodiment, the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
wherein P is edge And PT1 is the second polishing duration, and PT2 is the polishing time difference, for the polishing pressure of the wafer edge region to be polished.
In one embodiment, the target polishing parameter includes the second polishing parameter, where the second polishing parameter includes a third polishing duration of the edge region of the preset wafer from being polished to polishing being completed, and the adjusting, according to the first mapping relationship and the target polishing parameter, the polishing pressure of the edge region of the wafer to be polished includes:
and feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the third grinding duration and the first mapping relation.
In one embodiment, the feedback adjusting the polishing pressure of the wafer edge area to be polished according to the third polishing duration and the first mapping relationship includes:
determining the grinding pressure of the wafer edge area to be ground according to the third grinding duration, the weight coefficient and the constant; wherein the polishing pressure of the wafer to be polished is inversely related to the weight coefficient.
In one embodiment, the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
wherein P is edge And PT3 is the polishing pressure of the wafer edge area to be polished, and PT3 is the third polishing duration.
In a second aspect, the application further provides a wafer polishing control device. The device comprises:
the first acquisition module is used for acquiring a first mapping relation between the grinding pressure and the grinding rate of the wafer to be ground;
the second acquisition module is used for acquiring a first grinding parameter of a preset wafer center area and a second grinding parameter of a preset wafer edge area; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and the adjusting module is used for adjusting the grinding pressure of the edge area of the wafer to be ground in a feedback manner according to the first mapping relation and the target grinding parameter, wherein the grinding characteristics of the preset wafer and the wafer to be ground accord with consistency conditions, and the target grinding parameter comprises at least one of the first grinding parameter and the second grinding parameter.
In a third aspect, the present application also provides a computer device. The computer device comprises a memory storing a computer program and a processor which when executing the computer program performs the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and feeding back and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameters, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with consistency conditions, and the target polishing parameters comprise at least one of the first polishing parameters and the second polishing parameters.
In a fourth aspect, the present application also provides a computer-readable storage medium. The computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and feeding back and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameters, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with consistency conditions, and the target polishing parameters comprise at least one of the first polishing parameters and the second polishing parameters.
In a fifth aspect, the present application also provides a computer program product. The computer program product comprises a computer program which, when executed by a processor, implements the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and feeding back and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameters, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with consistency conditions, and the target polishing parameters comprise at least one of the first polishing parameters and the second polishing parameters.
The wafer polishing control method, the wafer polishing control device, the computer equipment, the storage medium and the computer program product are used for acquiring a first mapping relation between the polishing pressure and the polishing rate of a wafer to be polished; acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage; and feeding back and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameters, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with consistency conditions, and the target polishing parameters comprise at least one of the first polishing parameters and the second polishing parameters. Therefore, the corresponding grinding rate can be adjusted by adjusting the grinding pressure of the edge area of the wafer to be ground, so that the occurrence of dishing caused by excessive grinding of the edge area of the wafer to be ground is avoided, and the reliability reduction of the semiconductor device can be avoided.
Drawings
FIG. 1 is a flow chart of a method for controlling wafer polishing in one embodiment;
FIG. 2 is a graph showing the EPD signal intensity of the edge region and the middle region of a wafer during polishing according to the polishing time;
FIG. 3 is a graph showing a polishing rate of a wafer according to a polishing pressure according to an embodiment;
FIG. 4 is a flowchart illustrating a control method of wafer polishing in step S103 according to one embodiment;
FIG. 5 is a block diagram of a control apparatus for wafer polishing in one embodiment;
fig. 6 is an internal structural diagram of a computer device in one embodiment.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
As shown in FIG. 1, the application provides a control method for wafer polishing, comprising the following steps S101 to S103:
s101: a first mapping relation between the polishing pressure and the polishing rate of the wafer to be polished is obtained.
In the process of performing chemical mechanical polishing (Chemical Mechanical Polishing, CMP) on a wafer, the back surface of the wafer is usually fixed on a polishing head (head), then the polishing head is pressed downward, so that the front surface of the wafer contacts with a polishing pad (pad) located on a polishing platen, and then the polishing head drives the wafer to rotate to realize the polishing process of the wafer, and some polishing liquid (Slurry) may be added in the polishing process, where the polishing head, the polishing pad and the polishing liquid may be collectively referred to as polishing consumables (parts). Of course, depending on the particular CMP tool type, the polishing consumables may also include other polishing workpieces (e.g., cleaning brushes) or other polishing aids (e.g., protectants), and so forth.
The wafer to be polished can be a wafer to be polished waiting in a CMP machine; the polishing pressure of the wafer may refer to the pressure generated between the polishing head and the polishing pad when the polishing head presses down the wafer; the polishing rate of the wafer may refer to the average thickness of the surface material of the wafer polished per unit time. In the process of polishing a wafer, a certain mapping relation is presented between the polishing pressure and the polishing rate of the wafer, wherein the mapping relation is generally expressed as that the larger the polishing pressure is, the faster the polishing rate is; the smaller the polishing pressure, the slower the polishing rate. The mapping relationship between the polishing pressure and the polishing rate of the wafer is related to the polishing characteristics such as the type of the surface material of the wafer, the polishing process parameters, and the type of the polishing consumables, and when the polishing characteristics are changed, the mapping relationship may also be changed. For example, when a certain type of polishing head is used, it is assumed that the polishing pressure is a and the corresponding polishing rate is b; at this time, another type of polishing head is replaced, and the corresponding polishing rate may be increased to 1.2b (or decreased to 0.8 b) while the polishing pressure is kept constant at a.
Of course, in a manufacturing factory, in order to maintain uniformity of a manufacturing process, the type of surface material and polishing process parameters of a wafer are not easily changed for the wafer in the same process. Moreover, for wafers in the same process, the type of polishing consumables used in polishing is generally uniform, or the polishing consumables are not easily replaced for a longer period of time. In short, the polishing characteristics of wafers in the same process can be generally considered to be uniform. Therefore, the first mapping relationship between the polishing pressure and the polishing rate of the wafer to be polished can be generally determined by each polishing data obtained when polishing the wafer in the same process, and specifically may be: the method comprises the steps of collecting polishing pressure and polishing rate of a wafer in the same process in a polishing process in a large quantity, and determining a first mapping relation between the polishing pressure and the polishing rate of the wafer to be polished according to each polishing pressure and each polishing rate; or changing the polishing pressure of the wafer in the same process in the polishing process, and measuring the change condition of the polishing rate corresponding to each polishing pressure, thereby determining the first mapping relation between the polishing pressure and the polishing rate of the wafer to be polished.
S102: acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage.
During polishing of the wafer, the degree to which the surface material of each region of the wafer is polished may not be uniform at the same time, as the polishing rate may not be uniform for each region of the wafer. For example, for metallic materials (e.g., tungsten) whose surface material is physical vapor deposition (Physical Vapor Deposition, PVD) deposited, since the metallic material deposited in the edge region of the wafer is typically thicker than the metallic material deposited in the center region of the wafer, the polishing rate of the edge region of the wafer typically needs to be faster than the polishing rate of the center region of the wafer. End PointDetector, EPD methods may be used to determine the degree of polishing of the surface material in each region of the wafer, for example, during polishing, EPD signals may be collected from the edge region and the center region of the wafer by EPD probes, respectively, and the degree of polishing of the corresponding region of the wafer may be determined based on the EPD signal strength of the corresponding region.
The polishing stage of the wafer may be further divided into a stage from the start of polishing the surface material of the wafer to the polishing of the polishing material, and a stage from the polishing of the surface material of the wafer to the end of polishing, where the time elapsed in each polishing stage is the polishing duration corresponding to each polishing stage. The polishing stage may be subdivided into different stages according to a specific application environment, that is, the first polishing parameter and the second polishing parameter may determine a polishing duration corresponding to the polishing stage of which section of the wafer is specific according to an actual application environment.
Further, the EPD method may be used to determine polishing durations corresponding to specific polishing stages of the edge region and the center region of the wafer, so as to determine the first polishing parameter and the second polishing parameter. For example, as shown in fig. 2, curve 1 represents the EPD signal of the edge region of a certain wafer, curve 2 represents the EPD signal of the center region of the wafer, the abscissa in fig. 2 represents the polishing time (in s), and the ordinate represents the EPD signal intensity (in Cd, i.e., candela, referring to the luminous flux in solid angle, i.e., lumens/solid angle). As can be seen from curve 1 in fig. 2, the polishing stage of the wafer can be divided into a first stage and a second stage, wherein the first stage is a stage from the start of polishing the wafer to the surface material being polished, the second stage is a stage from the surface material being polished to the end of polishing, and the polishing time periods corresponding to the first stage and the second stage are determined in fig. 2, so as to determine the first polishing parameter and the second polishing parameter. In addition, the specific operating principles of EPDs are well known to those skilled in the art and will not be described in detail herein.
S103: and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameter feedback, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with the consistency condition, and the target polishing parameter comprises at least one of a first polishing parameter and a second polishing parameter.
The fact that the polishing characteristics of the preset wafer and the wafer to be polished conform to the consistency condition means that the polishing characteristics of the preset wafer and the wafer to be polished can be completely the same, namely the preset wafer and the wafer to be polished can be regarded as the wafer in the same procedure, the preset wafer and the wafer to be polished are polished by the same CMP machine, and only the preset wafer is polished first, and the wafer to be polished is polished.
In addition, it can be understood that, since the polishing characteristics of the wafer to be polished and the preset wafer conform to the consistency condition, whether the polishing rate of each area of the preset wafer is kept uniform can be determined by acquiring the target polishing parameters of the preset wafer. And because the first mapping relation exists between the grinding pressure and the grinding rate of the wafer to be ground, the grinding pressure of the edge area of the wafer to be ground can be adjusted in a feedback manner through the first mapping relation of the wafer to be ground and the target grinding parameter of the preset wafer, so that the grinding rate of the edge area of the wafer to be ground can be adjusted, the edge area of the wafer to be ground is prevented from being excessively ground to generate a dent, and the reliability of a semiconductor device is prevented from being reduced.
In the method for controlling wafer polishing in this embodiment, a first mapping relationship between polishing pressure and polishing rate of a wafer to be polished is obtained; acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage; and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameter feedback, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with the consistency condition, and the target polishing parameter comprises at least one of a first polishing parameter and a second polishing parameter. Therefore, the corresponding grinding rate can be adjusted by adjusting the grinding pressure of the edge area of the wafer to be ground, so that the occurrence of dishing caused by excessive grinding of the edge area of the wafer to be ground is avoided, and the reliability reduction of the semiconductor device can be avoided.
In one embodiment, the polishing pressure is positively correlated with the polishing rate, wherein the first mapping is characterized by a linear function, the linear function being expressed by the following formula:
wherein Y is the polishing rate, X is the polishing pressure, A is the weight coefficient, and B is a constant.
As shown in fig. 3, by continuously changing the polishing pressure of a certain wafer and recording the corresponding polishing rate, a solid line in fig. 3 is obtained, and the solid line can be used to represent the mapping relationship between the polishing pressure and the polishing rate of the wafer. Fitting this solid line to obtain the dashed line in fig. 3 shows that there is a substantially positive correlation between the polishing pressure and the polishing rate of the wafer. For example, the reference polishing pressure may be set to 7.2psi, i.e., the percentage of the reference polishing rate at 7.2psi is 100%, and then the corresponding percentage of the polishing rate with respect to the reference polishing rate at the other polishing pressures is measured, so that the polishing rate is in%) and the function expression of the dotted line fitted by the solid line in fig. 3 is y=a×x+b, thereby obtaining the weight coefficient a and the constant B. Of course, it is conceivable that when the polishing characteristics of the wafer to be polished are changed, the first mapping relationship between the polishing pressure and the polishing rate of the wafer to be polished is also changed, and then the weight coefficient a and the constant B are also required to be changed accordingly.
In one embodiment, the target polishing parameters include a first polishing parameter and a second polishing parameter, where the first polishing parameter includes a first polishing duration of a full polishing stage for polishing a center region of a preset wafer, and the second polishing parameter includes a second polishing duration of the full polishing stage for polishing an edge region of the preset wafer, and the polishing pressure of the edge region of the wafer to be polished is adjusted according to the first mapping relationship and the target polishing parameter feedback, as shown in fig. 4, and step S103 includes:
s1031: and acquiring the grinding time difference according to the first grinding time length and the second grinding time length.
The full polishing stage refers to the whole polishing stage of the wafer from the beginning to the end, the first polishing duration refers to the duration of the whole polishing stage of the central area of the preset wafer from the beginning to the end, and the second polishing duration refers to the duration of the whole polishing stage of the edge area of the preset wafer from the beginning to the end. For example, as shown in fig. 2, curve 1 is the EPD signal of the edge region of a certain preset wafer, curve 2 is the EPD signal of the center region of the preset wafer, and the first polishing time is about 40s, the second polishing time is about 35s, and the polishing time difference is about 5s, i.e. the edge region of the preset wafer reaches the polishing end point earlier than the center region of the preset wafer.
S1032: and feeding back and adjusting the grinding pressure of the edge area of the wafer to be ground according to the grinding time difference, the second grinding time length and the first mapping relation.
As can be readily inferred from fig. 2, the edge region of the predetermined wafer may be too worn to generate dishing by reaching the polishing end point prematurely (5 s faster than the center region). At this time, the polishing pressure of the edge region of the wafer to be polished is fed back and adjusted according to the polishing time difference, the second polishing time length and the first mapping relation, so that the polishing rate of the edge region of the wafer to be polished can be timely adjusted, and the edge region of the wafer to be polished is prevented from being overpolished, so that the reliability of the semiconductor device can be prevented from being reduced.
In one embodiment, the step S1032 includes: determining the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length, the weight coefficient and the constant; wherein the polishing pressure of the wafer edge area to be polished is inversely related to the weight coefficient.
On the basis of the above embodiments, in one embodiment, the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
wherein P is edge The polishing pressure in the wafer edge region to be polished, PT1, PT2, is the second polishing duration, and PT2 is the polishing time difference.
In one embodiment, the target polishing parameters include a second polishing parameter, where the second polishing parameter includes a third polishing duration from polishing the edge region of the preset wafer to polishing end, and the step S103 may further include: and feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the third grinding duration and the first mapping relation.
It will be appreciated that, although the polishing characteristics of the preset wafer and the wafer to be polished conform to the consistency condition, in the actual manufacturing process, there may be a large difference between the actual process characteristics such as the thickness of the surface materials of the preset wafer and the wafer to be polished or the degree of concavity and convexity of each region of the preset wafer and the wafer to be polished. Therefore, when the wafer to be polished is polished, the edge area of the wafer to be polished may be polished before the edge area of the preset wafer, and at this time, the time required from the polishing of the edge area of the preset wafer to the polishing end may be less than the third polishing duration, and the edge area of the wafer to be polished may be overpolished; or, the edge area of the wafer to be polished may be flattened after the edge area of the preset wafer is flattened, so that the time required from flattening the edge area of the preset wafer to finishing polishing may be longer than the third polishing time, and the edge area of the wafer to be polished may be insufficiently polished, which may result in the reliability of the semiconductor device being reduced.
In this embodiment, the third polishing duration from the flattening to the polishing end of the edge region of the preset wafer is directly obtained, and the polishing pressure of the edge region of the wafer to be polished at this time is adjusted according to the third polishing duration to further adjust the polishing rate, so that the time from the flattening to the polishing end of the edge region of the wafer to be polished is exactly equal to the third polishing duration or is close to the third polishing duration, and thus the edge region of the wafer to be polished is not overground or not completely flattened relative to the edge region of the preset wafer, thereby further avoiding the reliability reduction of the semiconductor device.
Based on the foregoing embodiments, in one embodiment, feedback adjusting the polishing pressure of the edge region of the wafer to be polished according to the third polishing duration and the first mapping relationship includes: determining the grinding pressure of the wafer edge area to be ground according to the third grinding duration, the weight coefficient and the constant; wherein the polishing pressure of the wafer to be polished is inversely related to the weight coefficient.
On the basis of the above embodiments, in one embodiment, the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
wherein P is edge The polishing pressure PT3 is a third polishing duration for the edge region of the wafer to be polished.
It should be understood that, although the steps in the flowcharts related to the above embodiments are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.
Based on the same inventive concept, the embodiment of the application also provides a wafer polishing control device for realizing the above related wafer polishing control method. The implementation of the solution provided by the apparatus is similar to that described in the above method, so the specific limitation in the embodiments of the control apparatus for polishing a wafer provided below may refer to the limitation of the control method for polishing a wafer described above, and will not be repeated here.
In one embodiment, as shown in fig. 5, there is provided a control device for wafer polishing, including: the device comprises a first acquisition module, a second acquisition module and an adjustment module, wherein:
the first acquisition module is used for acquiring a first mapping relation between the grinding pressure and the grinding rate of the wafer to be ground;
the second acquisition module is used for acquiring a first grinding parameter of a preset wafer center area and a second grinding parameter of a preset wafer edge area; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage;
the adjusting module is used for adjusting the grinding pressure of the edge area of the wafer to be ground in a feedback mode according to the first mapping relation and the target grinding parameters, wherein the grinding characteristics of the preset wafer and the wafer to be ground accord with consistency conditions, and the target grinding parameters comprise at least one of first grinding parameters and second grinding parameters.
In one embodiment, the polishing pressure is positively correlated with the polishing rate, wherein the first mapping is characterized by a linear function, the linear function being expressed by the following formula:
wherein Y is the polishing rate, X is the polishing pressure, A is the weight coefficient, and B is a constant.
In one embodiment, the target polishing parameters include a first polishing parameter and a second polishing parameter, wherein the first polishing parameter includes a first polishing duration of a full polishing stage for polishing a center region of the preset wafer, the second polishing parameter includes a second polishing duration of the full polishing stage for polishing an edge region of the preset wafer, and the adjusting module includes an acquiring unit and a first adjusting unit, wherein:
the acquisition unit is used for acquiring the grinding time difference according to the first grinding time length and the second grinding time length;
the first adjusting unit is used for feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length and the first mapping relation.
In one embodiment, the first adjusting unit is specifically configured to determine the polishing pressure of the edge region of the wafer to be polished according to the polishing time difference, the second polishing duration, the weight coefficient, and the constant; wherein the polishing pressure of the wafer edge area to be polished is inversely related to the weight coefficient.
In one embodiment, the polishing pressure of the edge region of the wafer to be polished is expressed by the following formula:
wherein P is edge The polishing pressure in the wafer edge region to be polished, PT1, PT2, is the second polishing duration, and PT2 is the polishing time difference.
In one embodiment, the target polishing parameters include a second polishing parameter, wherein the second polishing parameter includes a third polishing duration of the edge region of the preset wafer from being polished to polishing being completed, and the adjusting module further includes a second adjusting unit, where the second adjusting unit is configured to feedback adjust a polishing pressure of the edge region of the wafer to be polished according to the third polishing duration and the first mapping relationship.
In one embodiment, the second adjusting unit is specifically configured to determine the polishing pressure of the edge area of the wafer to be polished according to the third polishing duration, the weight coefficient, and the constant; wherein the polishing pressure of the wafer to be polished is inversely related to the weight coefficient.
In one embodiment, the polishing pressure of the edge region of the wafer to be polished is expressed by the following formula:
wherein P is edge The polishing pressure PT3 is a third polishing duration for the edge region of the wafer to be polished.
The control device for wafer polishing provided in the above embodiment has similar principles and technical effects to those of the above method embodiment, and will not be described herein.
The above-mentioned control device for wafer polishing may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure of which may be as shown in fig. 6. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program, when executed by the processor, implements a method for controlling wafer polishing. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be keys, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the structure shown in FIG. 6 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage;
and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameter feedback, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with the consistency condition, and the target polishing parameter comprises at least one of a first polishing parameter and a second polishing parameter.
The computer device provided in the foregoing embodiments has similar implementation principles and technical effects to those of the foregoing method embodiments, and will not be described herein in detail.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage;
and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameter feedback, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with the consistency condition, and the target polishing parameter comprises at least one of a first polishing parameter and a second polishing parameter.
The computer readable storage medium provided in the above embodiment has similar implementation principles and technical effects to those of the above method embodiment, and is not repeated here
In one embodiment, a computer program product is provided comprising a computer program which, when executed by a processor, performs the steps of:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of the grinding stage;
and adjusting the polishing pressure of the edge area of the wafer to be polished according to the first mapping relation and the target polishing parameter feedback, wherein the polishing characteristics of the preset wafer and the wafer to be polished accord with the consistency condition, and the target polishing parameter comprises at least one of a first polishing parameter and a second polishing parameter.
The computer program product provided in the above embodiment has similar principles and technical effects to those of the above method embodiment, and will not be described herein.
Those skilled in the art will appreciate that implementing all or part of the above-described methods in accordance with the embodiments may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (Magnetoresistive RandomAccess Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (PhaseChange Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (StaticRandom Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the embodiments provided herein may include at least one of a relational database and a non-relational database. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processor referred to in the embodiments provided in the present application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic unit, a data processing logic unit based on quantum computing, or the like, but is not limited thereto.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of the application should be assessed as that of the appended claims.
Claims (11)
1. A method for controlling wafer polishing, the method comprising:
acquiring a first mapping relation between the grinding pressure and the grinding rate of a wafer to be ground;
acquiring a first grinding parameter of a preset wafer center region and a second grinding parameter of a preset wafer edge region; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and adjusting the grinding pressure of the edge area of the wafer to be ground according to the first mapping relation and the target grinding parameter in a feedback manner, wherein the grinding characteristics of the preset wafer and the wafer to be ground accord with consistency conditions, and the target grinding parameter comprises at least one of the first grinding parameter and the second grinding parameter.
2. The method of claim 1, wherein the polishing pressure is positively correlated with the polishing rate, wherein the first map is characterized by a linear function, the linear function being expressed by the following formula:
，
wherein Y is the polishing rate, X is the polishing pressure, A is a weight coefficient, and B is a constant.
3. The method according to claim 2, wherein the target polishing parameters include the first polishing parameter and the second polishing parameter, wherein the first polishing parameter includes a first polishing duration of a full polishing stage for polishing a center region of the preset wafer, the second polishing parameter includes a second polishing duration of a full polishing stage for polishing an edge region of the preset wafer, and wherein the adjusting the polishing pressure of the edge region of the wafer to be polished according to the first mapping relation and the target polishing parameter includes:
acquiring a grinding time difference according to the first grinding time length and the second grinding time length;
and feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length and the first mapping relation.
4. The method according to claim 3, wherein the feedback adjusting the polishing pressure of the wafer edge region to be polished according to the polishing time difference and the first map comprises:
determining the grinding pressure of the wafer edge area to be ground according to the grinding time difference, the second grinding time length, the weight coefficient and the constant; wherein the polishing pressure of the wafer edge area to be polished is inversely related to the weight coefficient.
5. The method according to claim 4, wherein the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
，
wherein P is edge And PT1 is the second polishing duration, and PT2 is the polishing time difference, for the polishing pressure of the wafer edge region to be polished.
6. The method according to claim 2, wherein the target polishing parameter includes the second polishing parameter, wherein the second polishing parameter includes a third polishing duration of the edge region of the preset wafer from being polished to polishing being completed, wherein the adjusting the polishing pressure of the edge region of the wafer to be polished according to the first mapping relationship and the target polishing parameter feedback includes:
and feeding back and adjusting the grinding pressure of the wafer edge area to be ground according to the third grinding duration and the first mapping relation.
7. The method according to claim 6, wherein the feedback adjusting the polishing pressure of the wafer edge region to be polished according to the third polishing duration and the first mapping relation comprises:
determining the grinding pressure of the wafer edge area to be ground according to the third grinding duration, the weight coefficient and the constant; wherein the polishing pressure of the wafer to be polished is inversely related to the weight coefficient.
8. The method according to claim 7, wherein the polishing pressure of the wafer edge region to be polished is expressed by the following formula:
，
wherein P is edge And PT3 is the polishing pressure of the wafer edge area to be polished, and PT3 is the third polishing duration.
9. A control apparatus for wafer polishing, the apparatus comprising:
the first acquisition module is used for acquiring a first mapping relation between the grinding pressure and the grinding rate of the wafer to be ground;
the second acquisition module is used for acquiring a first grinding parameter of a preset wafer center area and a second grinding parameter of a preset wafer edge area; the first grinding parameter and the second grinding parameter respectively comprise the grinding duration of a grinding stage;
and the adjusting module is used for adjusting the grinding pressure of the edge area of the wafer to be ground in a feedback manner according to the first mapping relation and the target grinding parameter, wherein the grinding characteristics of the preset wafer and the wafer to be ground accord with consistency conditions, and the target grinding parameter comprises at least one of the first grinding parameter and the second grinding parameter.
10. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 8 when the computer program is executed.
11. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 8.
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