CN110552009A - Method for cleaning molybdenum wafer for super-power direct-current power transmission and transformation module - Google Patents
Method for cleaning molybdenum wafer for super-power direct-current power transmission and transformation module Download PDFInfo
- Publication number
- CN110552009A CN110552009A CN201910724684.2A CN201910724684A CN110552009A CN 110552009 A CN110552009 A CN 110552009A CN 201910724684 A CN201910724684 A CN 201910724684A CN 110552009 A CN110552009 A CN 110552009A
- Authority
- CN
- China
- Prior art keywords
- molybdenum
- circle
- molybdenum circle
- wafer
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/106—Other heavy metals refractory metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
- C25F1/02—Pickling; Descaling
- C25F1/04—Pickling; Descaling in solution
- C25F1/08—Refractory metals
Abstract
2The invention belongs to the technical field of molybdenum wafer production, and particularly relates to a molybdenum wafer cleaning method for an ultrahigh-power direct-current power transmission and transformation module.
Description
Technical Field
The invention belongs to the technical field of molybdenum wafer production, and particularly relates to a method for cleaning a molybdenum wafer for an ultrahigh-power direct-current power transmission and transformation module.
Background
Because the molybdenum wafer is fired by a special smelting process, and the procedures of high-temperature calcination rolling, mechanical processing, grinding, heat treatment and the like are carried out before blanking, the micro-gaps and the concave-convex parts of the crystal grains on the surface of the molybdenum circle are filled with oil stains, particles and an oxide layer, surface electrochemistry and ultrasonic cleaning are carried out in a targeted manner, and only various impurities on the surface of the molybdenum circle are removed completely, so that a qualified metal film product can be plated on the surface of the molybdenum circle by a PVD magnetron sputtering method.
Disclosure of Invention
Aiming at the technical problem, the invention adopts an environment-friendly cleaning method.
the method for cleaning the molybdenum wafer for the ultra-high power direct current power transmission and transformation module comprises the following steps:
(1) Performing hydrogen peroxide treatment on the surface of the molybdenum circle, soaking the molybdenum circle in 25% ~ 30% hydrogen peroxide, washing the molybdenum circle with two times of clear water to remove residual hydrogen peroxide on the surface, reducing the molybdenum circle with 80% sulfuric acid and 10% potassium dichromate to remove a surface oxide layer, and removing oil stains, residual oxide scales and various impurity pollutants on the surface of the molybdenum circle;
(2) soaking the molybdenum circle in 5 ~ 10% NaOH solution, connecting the molybdenum circle with the negative electrode of a power supply to form an electric field with the anode in the solution, and separating H 2 bubbles on the surface of the molybdenum circle after electrification;
(3) the molybdenum circle is put into ionized water for ultrasonic cleaning, particles and organic matters remained on the surface of the molybdenum circle are removed under the action of ultrasonic waves on the surface of the molybdenum circle, and the surface of the molybdenum circle is cleaned through deionized rinsing of more than 10M omega.
Further, in the step (1), the temperature of hydrogen peroxide is kept at 60-70 ℃, so that the color of the round surface of the molybdenum is darkened to be tan and then the round surface of the molybdenum can be taken out.
according to the method for cleaning the molybdenum wafer for the ultra-high-power direct current power transmission and transformation module, hydrogen peroxide is used for replacing the traditional acid washing, and pollution is reduced.
Detailed Description
The specific technical scheme of the invention is described by combining the embodiment.
The method for cleaning the molybdenum wafer for the ultra-high power direct current power transmission and transformation module comprises the following steps:
(1) The molybdenum wafer is soaked in 25% ~ 30% hydrogen peroxide (the temperature of the hydrogen peroxide is kept at 60-70 ℃, the color of the surface of the molybdenum wafer is darkened to be tan, and then the molybdenum wafer can be taken out, so that the surface of the molybdenum wafer is oxidized, the residual hydrogen peroxide on the surface is removed through two times of washing with clear water, then 80% sulfuric acid and 10% potassium dichromate are used for reduction, the surface oxide layer is removed, at the moment, the residual oil stain, residual oxide skin and various impurity pollutants on the surface of the molybdenum wafer are removed completely, and the surface of the molybdenum wafer is bright and high in cleanliness.
(2) The molybdenum circle is immersed in 5 ~ 10% NaOH solution, and is connected with a power supply cathode to form an electric field with an anode in the solution, H2 bubbles are separated out from the surface of the molybdenum circle after electrification, and H2 is rapidly separated out to enable the H2 bubbles to bring out impurity particles and oil stains in the surface of the molybdenum circle and crystal grain microgaps, so that the aim of deep decontamination is fulfilled.
(3) The molybdenum circle is put into ionized water for ultrasonic cleaning, particles and organic matters remained on the surface of the molybdenum circle are removed under the action of ultrasonic waves on the surface of the molybdenum circle, and the surface of the molybdenum circle is cleaned through deionized rinsing of more than 10M omega.
Claims (2)
1. The method for cleaning the molybdenum wafer for the ultrahigh-power direct-current power transmission and transformation module is characterized by comprising the following steps of:
(1) Performing hydrogen peroxide treatment on the surface of the molybdenum circle, soaking the molybdenum circle in 25% ~ 30% hydrogen peroxide, washing the molybdenum circle with two times of clear water to remove residual hydrogen peroxide on the surface, reducing the molybdenum circle with 80% sulfuric acid and 10% potassium dichromate to remove a surface oxide layer, and removing oil stains, residual oxide scales and various impurity pollutants on the surface of the molybdenum circle;
(2) Soaking the molybdenum circle in 5 ~ 10% NaOH solution, connecting the molybdenum circle with the negative electrode of a power supply to form an electric field with the anode in the solution, and separating H 2 bubbles on the surface of the molybdenum circle after electrification;
(3) The molybdenum circle is put into ionized water for ultrasonic cleaning, particles and organic matters remained on the surface of the molybdenum circle are removed under the action of ultrasonic waves on the surface of the molybdenum circle, and the surface of the molybdenum circle is cleaned through deionized rinsing of more than 10M omega.
2. The method for cleaning the molybdenum wafer for the ultra-high-power direct current transmission and transformation module according to claim 1, wherein the temperature of hydrogen peroxide is kept at 60-70 ℃ in the step (1), so that the surface of the molybdenum wafer is dark brown and can be taken out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724684.2A CN110552009A (en) | 2019-08-07 | 2019-08-07 | Method for cleaning molybdenum wafer for super-power direct-current power transmission and transformation module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910724684.2A CN110552009A (en) | 2019-08-07 | 2019-08-07 | Method for cleaning molybdenum wafer for super-power direct-current power transmission and transformation module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110552009A true CN110552009A (en) | 2019-12-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910724684.2A Pending CN110552009A (en) | 2019-08-07 | 2019-08-07 | Method for cleaning molybdenum wafer for super-power direct-current power transmission and transformation module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110552009A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0989600A2 (en) * | 1998-09-25 | 2000-03-29 | Sumitomo Electric Industries, Ltd. | Surface cleaning method for manufacturing II-VI compound semiconductor epitaxial wafers |
| CN1807008A (en) * | 2006-01-26 | 2006-07-26 | 宜兴市科兴合金材料有限公司 | Process for manufacturing molybdenum disc by molybdenum blank rolling method |
| CN104602438A (en) * | 2014-12-29 | 2015-05-06 | 中国原子能科学研究院 | Preparation method of tritium impregnated target slice |
| CN108486527A (en) * | 2018-06-21 | 2018-09-04 | 江苏时代华宜电子科技有限公司 | A kind of nickel plating technology of molybdenum alloy substrate |
-
2019
- 2019-08-07 CN CN201910724684.2A patent/CN110552009A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0989600A2 (en) * | 1998-09-25 | 2000-03-29 | Sumitomo Electric Industries, Ltd. | Surface cleaning method for manufacturing II-VI compound semiconductor epitaxial wafers |
| CN1807008A (en) * | 2006-01-26 | 2006-07-26 | 宜兴市科兴合金材料有限公司 | Process for manufacturing molybdenum disc by molybdenum blank rolling method |
| CN104602438A (en) * | 2014-12-29 | 2015-05-06 | 中国原子能科学研究院 | Preparation method of tritium impregnated target slice |
| CN108486527A (en) * | 2018-06-21 | 2018-09-04 | 江苏时代华宜电子科技有限公司 | A kind of nickel plating technology of molybdenum alloy substrate |
Non-Patent Citations (1)
| Title |
|---|
| 钼圆片表面磁控溅射镀镍薄膜的工艺、结构及性能研究: "钼圆片表面磁控溅射镀镍薄膜的工艺、结构及性能研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20191210 |
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| WD01 | Invention patent application deemed withdrawn after publication |