CN110531101A - A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic - Google Patents
A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic Download PDFInfo
- Publication number
- CN110531101A CN110531101A CN201910823890.9A CN201910823890A CN110531101A CN 110531101 A CN110531101 A CN 110531101A CN 201910823890 A CN201910823890 A CN 201910823890A CN 110531101 A CN110531101 A CN 110531101A
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- CN
- China
- Prior art keywords
- pinboard
- vibrating beam
- ceramic
- beam accelerometer
- silicon vibrating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/006—Details of instruments used for thermal compensation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a kind of ceramic pinboards for improving difference silicon vibrating beam accelerometer temperature characterisitic, including pinboard ontology, there is cross-shaped through hole among pinboard ontology, pinboard body surface has printed four metal right angle wires, four rectangle bonding planes are collectively formed in four metal right angle wires and cross-shaped through hole edge, and total is centrosymmetric.The advantage of the invention is that overcoming adverse effect of the mobility to adhesive layer and chip contacting portion shape of bonding agent, improve the integrally-built symmetry of difference silicon vibrating beam accelerometer after 4 points of smearing bonding agents, accelerometer is set to give full play to the inhibiting effect to the common mode interference as caused by thermal stress, to improve the temperature performance of accelerometer.
Description
Technical field
The invention belongs to MEMS package technical fields, and in particular to a kind of improvement difference silicon vibrating beam accelerometer temperature characterisitic
Ceramic pinboard.
Background technique
Silicon vibrating beam accelerometer is the force-frequency effect according to resonator, and acceleration is changed into adding for resonant frequency variation
Velocity sensor.Silicon vibrating beam accelerometer is mainly made of detection mass block, lever construction, resonator and supporting mechanism, wherein
Two levers and two resonators are symmetrical, and two resonator difference under tensions and pressure effect are so that one humorous when loaded
Vibration device frequency increases the reduction of another resonant frequency, and carrying out calculating using the difference of two resonant frequencies can be obtained input
Acceleration.Therefore, the common mode as caused by the factors such as temperature can be effectively suppressed in the difference silicon vibrating beam accelerometer of this symmetrical configuration
Interference.
Silicon vibrating beam accelerometer in the application, needs suitable encapsulating structure to provide support and radiating condition for it, protection
Chip is free from the influence of the external environment and destroys, while realizing the interconnection with external signal.Be typically used as encapsulating material has gold
Belong to, ceramic and plastics, wherein Metal Packaging has good heat-sinking capability and electromagnetic shielding capability, is widely used in MEMS envelope
In dress.Metal shape for hat encapsulating structure mainly includes metal cap, ceramic pinboard and the tube socket with pin.Chip passes through paster technique
Fixed on ceramic pinboard, paster technique carrys out adhering chip usually using solder or bonding agent, is compared to solder, uses
Bonding agent such as epoxide-resin glue etc. is bonded, and has that technological temperature is low, at low cost, internal stress is low and easy to operate etc. excellent
Point, therefore be usually applied in the MEMS chip encapsulation sensitive to stress variation, such as micro-acceleration gauge, gyroscope etc..
When being bonded with bonding agent to silicon vibrating beam accelerometer, common smearing mode can be divided into bonding plane and all apply
Smear with 4 points smear, wherein the mode of full coat due to bond area it is big, thermal stress is also big, and 4 points smearing mode bond areas
Small, thermal stress is lower than the mode of full coat.But since bonding agent has mobility, the shape of each adhesive spots is irregular, especially
It is the shape of bonding agent and chip contacting portion, therefore the adhesive layer symmetry of 4 points of smearings is poor, so that thermal stress is in structure
In be unevenly distributed, thus reduce accelerometer differential configuration to inhibit common-mode error effect, affect accelerometer
Temperature performance.
Summary of the invention
The purpose of the present invention is to solve the above problems, provide a kind of improvement difference silicon vibrating beam accelerometer temperature characterisitic
Ceramic pinboard, thus improve silicon vibrating beam accelerometer 4 points smear bonding agent in the case where symmetry.
In order to achieve the above object, the method that the present invention uses is: a kind of improvement difference silicon vibrating beam accelerometer temperature is special
Property ceramic pinboard, including pinboard ontology has cross-shaped through hole, the printing of pinboard body surface among pinboard ontology
Four metal right angle wires, four metal right angle wires and cross-shaped through hole edge are collectively formed four rectangle bonding planes, whole
A structure is centrosymmetric.
As an improvement of the present invention, the cross-shaped through hole maximum length direction and maximum width direction is outer
Size is greater than chip size 1mm.
As an improvement of the present invention, four metal right angles wire marks off one and difference silicon vibration beam acceleration
The consistent region of chip form is counted, difference silicon vibrating beam accelerometer chip edge is placed in ceramic switching after being aligned with metal wire
On plate.
As an improvement of the present invention, when patch, bonding agent is uniformly applied on rectangle bonding plane, so that bonding agent is complete
All standing bonding plane.
As an improvement of the present invention, under the premise of meeting adhesive strength, increase the area of cross-shaped through hole as far as possible,
Reduce rectangle bonding plane area.
The utility model has the advantages that
A kind of ceramic pinboard of improvement difference silicon vibrating beam accelerometer temperature characterisitic proposed by the invention, is in original MEMS
On the basis of Metal Packaging, ceramic pinboard is improved.Four metal right angle wires of ceramic pinboard surface printing, on the one hand
It defines the symmetry of the range and glue sites of smearing bonding agent, on the other hand provides positioning for the fixation of chip；Ceramics turn
Cross-shaped through hole among fishplate bar, on the one hand reduces bond area, reduces thermal stress, and another aspect clear size of opening is slightly larger than
Chip size eliminates the adhesion of bonding agent Yu chip non-adhesive region, it is ensured that chip and bonding agent contact portion rectangle are viscous
The shape of junction improves the symmetry of structure after four glue dispensings, eliminates difference silicon vibrating beam accelerometer sufficiently by thermal stress
Caused common mode interference.
Detailed description of the invention
Fig. 1 is the ceramic pinboard of improvement difference silicon vibrating beam accelerometer temperature characterisitic of the invention and the knot of die bonding
Structure schematic diagram；
Fig. 2 is that the ceramic pinboard of improvement difference silicon vibrating beam accelerometer temperature characterisitic and the structure of die bonding of the invention cut open
Face schematic diagram；
Fig. 3 is the structural schematic diagram of the ceramic pinboard of improvement difference silicon vibrating beam accelerometer temperature characterisitic of the invention.
Each component in figure are as follows: 1, difference silicon vibrating beam accelerometer chip；2, adhesive layer；3, ceramic pinboard；4, metal is straight
Angle wire.
Specific embodiment
With reference to the accompanying drawing, embodiments of the present invention are illustrated.
Referring to Fig. 1 and Fig. 2, a kind of ceramics switching improving difference silicon vibrating beam accelerometer temperature characterisitic proposed by the present invention
Plate, including pinboard ontology 3, there are four metal right angle wires 4 for 3 surface printing of pinboard ontology, and position can be according to difference silicon
The size of vibrating beam accelerometer chip 1 determines.
The region that metal right angle wire 4 is confined is 1 placement region of difference silicon vibrating beam accelerometer chip, should be at transferring
The center of plate ontology 3.It is completely the same that wire 4 interior zone in metal right angle is divided into four shapes by intermediate cross-shaped through hole
Rectangle bonding region.
When patch, bonding agent is smeared on the surface of ceramic pinboard 3 first, bonding agent is made sufficiently to cover metal right angle wire
Bonding region inside 4 forms adhesive layer 2, difference silicon vibrating beam accelerometer chip 1 is then centrally placed in metal right angle frame
In line 4, keep the edge of difference silicon vibrating beam accelerometer chip 1 concordant with metal right angle wire 4.According to the invention method, can have
Effect improves the symmetry of 4 viscose glues.
Certainly, in order to further reduce thermal stress, under the premise of meeting adhesive strength, cross should be increased as far as possible
Via area, to reduce rectangle bonding plane area.
A kind of ceramic pinboard of improvement difference silicon vibrating beam accelerometer temperature characterisitic proposed by the invention, is original
On the basis of MEMS Metal Packaging, ceramic pinboard is improved.Four metal right angle wires of ceramic pinboard surface printing, one
Aspect defines the symmetry of the range and glue sites of smearing bonding agent, on the other hand provides positioning for the fixation of chip；Pottery
Cross-shaped through hole among porcelain pinboard, on the one hand reduces bond area, reduces thermal stress, and another aspect clear size of opening omits
Greater than chip size, the adhesion of bonding agent Yu chip non-adhesive region is eliminated, it is ensured that chip and bonding agent contact portion square
The shape of shape bonding plane improves the symmetry of structure after four glue dispensings, eliminates difference silicon vibrating beam accelerometer sufficiently by heat
Common mode interference caused by stress.
It is only ideal embodiment of the invention in summary, is not intended to limit the present invention, that is, is not departing from
The improvement and deformation made on the basis of the method for the present invention principle, comes under protection scope of the present invention.
Claims (5)
1. a kind of ceramic pinboard for improving difference silicon vibrating beam accelerometer temperature characterisitic, including pinboard ontology (3), feature
It is: has cross-shaped through hole among pinboard ontology (3), four metal right angle wires of pinboard ontology (3) surface printing
(4), four rectangle bonding planes are collectively formed in four metal right angle wires (4) and cross-shaped through hole edge, and total is in center
Symmetrically.
2. a kind of ceramic pinboard for improving difference silicon vibrating beam accelerometer temperature characterisitic as described in claim 1, feature
Be: the outside dimension in the cross-shaped through hole maximum length direction and maximum width direction is greater than chip size 1mm.
3. a kind of ceramic pinboard for improving difference silicon vibrating beam accelerometer temperature characterisitic as described in claim 1, feature
Be: four metal right angle wires (4) mark off one and difference silicon vibrating beam accelerometer chip (1) consistent region of shape,
When patch, difference silicon vibrating beam accelerometer chip (1) edge is placed in ceramic pinboard after being aligned with metal right angle wire (4)
On.
4. a kind of ceramic pinboard for improving difference silicon vibrating beam accelerometer temperature characterisitic as described in claim 1, feature
Be: when patch, bonding agent is uniformly applied on rectangle bonding plane, so that bonding plane is completely covered in bonding agent.
5. a kind of ceramic pinboard for improving difference silicon vibrating beam accelerometer temperature characterisitic as described in claim 1, feature
Be: under the premise of meeting adhesive strength, cross-shaped through hole area is big as far as possible, so that rectangle bonding plane area is as far as possible
It is small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910823890.9A CN110531101A (en) | 2019-09-02 | 2019-09-02 | A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910823890.9A CN110531101A (en) | 2019-09-02 | 2019-09-02 | A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic |
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| Publication Number | Publication Date |
|---|---|
| CN110531101A true CN110531101A (en) | 2019-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910823890.9A Pending CN110531101A (en) | 2019-09-02 | 2019-09-02 | A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112180121A (en) * | 2020-09-11 | 2021-01-05 | 中国船舶重工集团公司第七0七研究所 | Method for bonding pendulum component of high-stability quartz flexible accelerometer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0823068A (en) * | 1994-07-07 | 1996-01-23 | Hitachi Ltd | Lead frame and semiconductor device using it |
| CN104501792A (en) * | 2014-12-18 | 2015-04-08 | 东南大学 | Double-shaft split type differential silicon micromachined resonant accelerometer |
| CN106517078A (en) * | 2015-09-11 | 2017-03-22 | 立景光电股份有限公司 | Assembly structure, method to form assembly structure and method to form close-loop sealant structure |
| CN109665487A (en) * | 2018-12-26 | 2019-04-23 | 中芯集成电路（宁波）有限公司 | A kind of MEMS device wafer scale system packaging method and encapsulating structure |
-
2019
- 2019-09-02 CN CN201910823890.9A patent/CN110531101A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0823068A (en) * | 1994-07-07 | 1996-01-23 | Hitachi Ltd | Lead frame and semiconductor device using it |
| CN104501792A (en) * | 2014-12-18 | 2015-04-08 | 东南大学 | Double-shaft split type differential silicon micromachined resonant accelerometer |
| CN106517078A (en) * | 2015-09-11 | 2017-03-22 | 立景光电股份有限公司 | Assembly structure, method to form assembly structure and method to form close-loop sealant structure |
| CN109665487A (en) * | 2018-12-26 | 2019-04-23 | 中芯集成电路（宁波）有限公司 | A kind of MEMS device wafer scale system packaging method and encapsulating structure |
Non-Patent Citations (1)
| Title |
|---|
| 王帆: "《硅微振梁式加速度计抗温漂的微结构及工艺设计》", 《中国惯性技术学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112180121A (en) * | 2020-09-11 | 2021-01-05 | 中国船舶重工集团公司第七0七研究所 | Method for bonding pendulum component of high-stability quartz flexible accelerometer |
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Application publication date: 20191203 |
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| RJ01 | Rejection of invention patent application after publication |