CN110518130B - Method for regulating secondary growth of perovskite crystal grains by electric field - Google Patents

Method for regulating secondary growth of perovskite crystal grains by electric field Download PDF

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CN110518130B
CN110518130B CN201910802239.3A CN201910802239A CN110518130B CN 110518130 B CN110518130 B CN 110518130B CN 201910802239 A CN201910802239 A CN 201910802239A CN 110518130 B CN110518130 B CN 110518130B
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perovskite
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CN110518130A (en
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沈文忠
程振东
刘洪�
丁东
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Shanghai Jiaotong University
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a method for regulating secondary growth of perovskite crystal grains by an electric field, which relates to the field of solar cells and is characterized in that an electric field adding device is independently designed on the basis of the existing one-step spin-coating heat treatment, and the device can regulate the electric field intensity by regulating the distance between two electrodes according to requirements, so that the secondary growth of film crystal grains is regulated and controlled. The invention realizes the visualization in the electric field processing process by utilizing the probe to contact the conductive ITO surface of the film, and has no damage to the sample film. The invention is more environment-friendly, simple and feasible without using a chemical method. The perovskite thin film processed by the electric field has larger grain size and more perovskite components, and the prepared perovskite solar cell has larger open-circuit voltage and short-circuit current density, thus having higher photoelectric conversion efficiency and better stability.

Description

Method for regulating secondary growth of perovskite crystal grains by electric field
Technical Field
The invention relates to the field of solar cells, in particular to a method for regulating secondary growth of perovskite crystal grains by an electric field.
Background
Metal halide Perovskite Solar Cells (PSCs) have attracted worldwide attention over the last 10 years and have recently become the most promising third generation photovoltaic cells, mainly due to their long carrier diffusion length, high absorption coefficient, relatively high defect tolerance. The Power Conversion Efficiency (PCE) of perovskite solar cells is rapidly increasing from 3.8% by Miyasaka et al to 24.2% by korea institute of chemical and technology (KRICT/MIT), and currently, the highest efficiency of PSC is close to 31% of the theoretical prediction limit, which is comparable to crystalline silicon (c-Si) solar cells.
The morphology of the perovskite thin film (including grain size, defects, continuity, etc.) is a more important parameter in the photovoltaic performance of inverted planar (p-i-n) solar cells than the crystallinity of the perovskite thin film. To date, researchers have made significant attempts to control nucleation and promote thin film crystal quality in order to improve PSC performanceImprovements such as interface engineering, doping, additives, solvent engineering, etc. Generally, these strategies are based on chemical modification methods for thin film crystal growth. Among them, the addition of additives to the precursor solution is one of the most effective strategies. E.g. by H2Synergistic effects of O additives and Dimethylformamide (DMF) vapor treatment produced high quality MAPbI3(CH3NH3PbI3) The conversion efficiency of the thin film solar cell is as high as 20.1%. The Dimethyl Sulfide (DS) additive increases the efficiency of flexible perovskite solar cells (F-PSCs) to 18.4% by slowing the crystallization rate and enlarging the grain size. Controlling MAPbI3The amount of Thiourea (TU) in the precursor is such as to obtain smooth and large particle size perovskite crystals, which enhances the stability and efficiency of the device in ambient air.
Furthermore, the perovskite crystallization process can be controlled by chemical and physical techniques. Shenzhou et al (adv. funct. mater.2017,1606156), successfully prepared a more compact MAPbI by electrochemical methods for the first time3Perovskite. The university of south of Henan university of Maheng (J.Mater.chem.A., 2018,6,1161) designs an electric field applying device which needs to be in contact with a thin film sample, has damage to the sample and has a larger interval.
Accordingly, those skilled in the art have endeavored to develop a method for better controlling MAPbI3The crystallization process of the perovskite thin film and the method which is not destructive to the sample.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the technical problem to be solved by the present invention is to develop a method for enlarging perovskite grains that reduces the use of chemical reagents and is non-destructive to the sample.
In order to achieve the purpose, the invention provides a method for regulating and controlling secondary growth of perovskite crystal grains by an electric field, which is characterized by comprising the following steps:
step 1, placing two identical small ITO glasses at a certain distance, placing micron-sized crystalline silicon on each small ITO glass, placing a large ITO glass on the micron-sized crystalline silicon, and building an electric field device by an external signal source;
step 2, washing and drying the patterned ITO coated glass, treating the glass with ultraviolet-ozone for a certain time, and transferring the glass into a glove box filled with air;
step 3, dissolving 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoldimethylp-benzoquinone-doped poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] in Chlorobenzene (CB) to form a mixed solution, stirring and heating the mixed solution overnight, filtering the prepared solution by using a filter, coating the solution on the patterned coated ITO glass obtained in the step 2, and then annealing to prepare a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate;
step 4, coating N, N-dimethylformamide on the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate in the step 3 so as to improve the wettability of the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] film on the perovskite precursor;
step 5, lead iodide (PbI)2) And Methyl Amine Iodide (MAI) in a mixed anhydrous solvent of N, N-dimethylformamide/dimethyl sulfoxide, stirring overnight at a certain temperature, filtering with a filter, and coating with poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine obtained in step 3]On an ITO substrate, Chlorobenzene (CB) is quickly dripped into the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine in the coating process]Transferring the film to the electric field device in the step 1, placing the coating surface upwards and centrally at the interval of the two small ITO glasses in the step 1 without contacting with the two small ITO glasses, externally connecting the uncoated area of the patterned coated ITO glass with a signal source anode through a probe, externally connecting the lower surface of the large ITO glass with a signal source cathode, performing electric field post-treatment, and simultaneously annealing on a heating plate to prepare a perovskite layer;
step 6, cooling the perovskite layer of the step 5 to room temperature, and then depositing a fullerene derivative PCBM solution on the top of the perovskite layer in a glove box;
and 7, thermally evaporating an Al (100nm) electrode through a mask plate on the fullerene derivative PCBM under high vacuum.
Further, the thickness of the micron-sized crystalline silicon in the step 1 can be adjusted as required, and the electric field intensity is further adjusted to achieve secondary growth of crystal grains.
Further, the patterned coated ITO glass in the step 2 has the same thickness as the small ITO glass in the step 1, the size of the small ITO glass is 0.7 inch multiplied by 0.7 inch, the sheet resistance is less than or equal to 10 omega/□, the light transmittance is greater than or equal to 83 percent, the washing process is that ultrasonic treatment is respectively carried out in diluted detergent, deionized water, acetone and Isopropanol (IPA) for 20 minutes, the drying process is drying in a vacuum oven, and the ultraviolet-ozone treatment time is 15 minutes.
Further, the mass ratio of 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane in the 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane-doped poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] in the step 3 is 25%, and the concentration of the mixed solution is 1 mg/ml.
Further, the filter of step 3 is a 0.45 μm teflon filter, the coating process is spin-coating on the ITO substrate at 5000rpm for 30 seconds, and the annealing process is annealing at 150 ℃ for 10 minutes in a glove box.
Further, the volume of N, N-dimethylformamide in step 4 was 60. mu.l, and the coating process was spin-coated on the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate at 4000rpm for 10 seconds.
Further, in the step 5, the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide is 9:1, the concentration of lead iodide is 1.20M, the concentration of methyl amine iodide is 1M, the temperature in the stirring process is 60-70 ℃, the filter is a 0.45 μ M polytetrafluoroethylene filter, the coating process is that poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate is coated for 30 seconds in a spinning way at the rotating speed of 4000rpm, and Chlorobenzene (CB) is added in the 5 th second of the coating process.
Further, in the step 5, the electric field post-treatment voltage is 0-40V, the frequency is 0-100Hz, and the annealing process is annealing for 10 minutes at 100 ℃ on a heating plate.
Further, the deposition process in step 6 is deposition at 1000rpm for 60 seconds.
Further, the high vacuum of step 7 is less than 6E10-4 Pa.
The invention has the following technical effects:
1. the preparation method of the electric field increasing crystal grain provided by the invention is more environment-friendly without using a chemical method, and is simple and feasible;
2. the probe is contacted with the conductive ITO surface of the film, so that the visualization in the electric field treatment process is realized, and the sample film is not damaged;
3. the perovskite thin film processed by the electric field has larger grain size and more perovskite components, and the prepared perovskite solar cell has larger open-circuit voltage and short-circuit current density, thus having higher photoelectric conversion efficiency and better stability.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of an apparatus for applying an electric field according to a preferred embodiment of the present invention,
the method comprises the following steps of 1-small ITO glass, 2-perovskite thin film to be processed, 3-micron crystalline silicon, 4-large ITO glass, 5-metal probe, 6-lead, 7-signal source and 8-patterned coating ITO glass;
FIG. 2 is a scanning electron microscope of a preferred embodiment of the present invention;
FIG. 3 is a statistical graph of the grain size of the preferred embodiment of the present invention;
fig. 4 is a graph of the efficiency of a solar cell assembled according to a preferred embodiment of the invention.
Detailed Description
The technical contents of the preferred embodiments of the present invention will be more clearly and easily understood by referring to the drawings attached to the specification. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. The size and thickness of each component shown in the drawings are arbitrarily illustrated, and the present invention is not limited to the size and thickness of each component. The thickness of the components may be exaggerated where appropriate in the figures to improve clarity.
Example 1
As shown in fig. 1, step 1, two identical small ITO glasses 1 are placed at a certain distance apart, a micron-sized crystalline silicon 3 is placed on each small ITO glass, a large ITO glass 4 is placed on the micron-sized crystalline silicon 3, and an external signal source 7 is built into an electric field device;
and 2, carrying out ultrasonic treatment on the patterned coated ITO glass 8 with the square resistance of less than or equal to 10 omega/□ and the light transmittance of more than or equal to 83 percent in diluted detergent, deionized water, acetone and Isopropanol (IPA) for 20 minutes respectively.
After drying the pattern-coated ITO glass 8 in a vacuum oven, it was treated with ultraviolet-ozone (Jelight, USA) for 15 minutes and then transferred into a glove box filled with air, step 3.
Step 4, preparing a hole transport layer: 25% by mass of 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane-doped poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] was dissolved in Chlorobenzene (CB) to form a mixed solution of 1mg/ml, which was then stirred and heated at 70 deg.C overnight. The prepared solution was filtered with a teflon filter (0.45 μm) before spin-coating, and then the mixture was spin-coated on the pattern-coated ITO glass 8 at 5000rpm for 30 seconds, followed by annealing at 150 ℃ for 10 minutes in a glove box to give poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate.
Step 5, in order to improve the wettability of the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] film on the perovskite precursor, 60 μ l N, N-dimethylformamide was spin-coated on the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate at a speed of 4000rpm for 10 seconds.
Step 6, preparing a perovskite layer and carrying out electric field treatment: the perovskite precursor solution is prepared by dissolving lead iodide (PbI) in a mixed anhydrous solvent of N, N-dimethylformamide/dimethyl sulfoxide (volume ratio of 9:1)21.20M), methyl amine iodide (MAI, 1M). The prepared solution was stirred at 60-70 ℃ overnight before use. The prepared solution was then filtered through a poly (tetrafluoroethylene) filter (0.45 μm) and spin-coated with poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine at 4000rpm]On the ITO substrate for 30 seconds. 150mL of Chlorobenzene (CB) was rapidly dropped onto the above film at 5 seconds of the spin coating process to obtain a perovskite thin film 2 to be treated. Then transferring the ITO glass to an electric field device in the step 1, placing the coating surface upwards and centrally at the interval of two small ITO glass 1 without contacting with the two small ITO glass 1, externally connecting the uncoated area of the patterned coated ITO glass 8 with the anode of a signal source 7 through a metal probe 5 and a lead 6, and externally connecting the lower surface of the large ITO glass 4 placed on the coating surface with the cathode of the signal source 7 through the lead 6, carrying out electric field post-treatment, and simultaneously annealing for 10 minutes at 100 ℃ on a heating plate to prepare a perovskite layer;
step 7, cooling to room temperature, followed by deposition of fullerene derivative PCBM solution (in CB) on top of the perovskite layer in a glove box at 1000rpm for 60 seconds.
And 8, thermally evaporating an Al (100nm) electrode through a mask plate on the fullerene derivative PCBM under high vacuum (<6E10-4 Pa).
As shown by the scanning electron microscope of fig. 2, the grain size of the electric field treated perovskite thin film is larger than that of the electric field-free treatment. As shown in the statistical plot of grain size in FIG. 3, the normal distribution of grain size for the electric field treated perovskite thin film is around 355nm, which is shifted to a larger size than that of the electric field-free treatment. Performance testing of the cells under a standard simulator as shown in fig. 4, the electric field treated perovskite thin film has a greater open circuit voltage and short circuit current density than that without electric field treatment, and thus has a higher photoelectric conversion efficiency.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.

Claims (8)

1. A method for regulating and controlling secondary growth of perovskite crystal grains by an electric field is characterized by comprising the following steps:
step 1, placing two identical small ITO glasses at a certain distance, placing micron-sized crystalline silicon on each small ITO glass, placing a large ITO glass on the micron-sized crystalline silicon, and building an electric field device by an external signal source;
step 2, washing and drying the patterned ITO coated glass, treating the glass with ultraviolet-ozone for a certain time, and transferring the glass into a glove box filled with air;
step 3, dissolving 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoldimethylp-benzoquinone-doped poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] in chlorobenzene CB to form a mixed solution, stirring and heating the mixed solution overnight, filtering the prepared solution by using a filter, then coating the solution on the patterned coated ITO glass obtained in the step 2, and then annealing to prepare a poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate;
step 4, coating N, N-dimethylformamide on the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate in the step 3 so as to improve the wettability of the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] film on the perovskite precursor;
step 5, lead iodide PbI2And MAI in N, N-dimethylformamide/dimethyl sulfoxide mixed anhydrous solvent, stirring overnight at a certain temperature, filtering with a filter, and coating with poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine in step 3]On ITO substrates, chlorobenzene CB was rapidly added dropwise to the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine during coating]On the film, it was then transferred to the electric field device in step 1, with the coated side centered up and placed in the space between the two small ITO glasses of step 1, without contacting them, and the uncoated areas of the patterned coated ITO glass were passed through a metal probeConnecting the needle with the positive electrode of a signal source, connecting the lower surface of the large ITO glass arranged on the needle with the negative electrode of the signal source, performing electric field post-treatment, and simultaneously annealing on a heating plate to prepare a perovskite layer;
step 6, cooling the perovskite layer of the step 5 to room temperature, and then depositing a fullerene derivative PCBM solution on the top of the perovskite layer in a glove box;
and 7, thermally evaporating an Al (100nm) electrode through a mask plate on the fullerene derivative PCBM under high vacuum, wherein the high vacuum is less than 6E10-4 Pa.
2. The method for regulating secondary growth of perovskite crystal grains by using the electric field as claimed in claim 1, wherein the thickness of the micron-sized crystalline silicon in the step 1 can be regulated as required, and further the electric field intensity is regulated to realize regulation of secondary growth of the crystal grains.
3. The method for regulating secondary growth of perovskite crystal grains by using an electric field as claimed in claim 1, wherein the thickness of the patterned coated ITO glass in the step 2 is the same as that of the small ITO glass in the step 1, the size of the patterned coated ITO glass is 0.7 inch x 0.7 inch, the sheet resistance is less than or equal to 10 Ω/□, the light transmittance is greater than or equal to 83%, the washing process is ultrasonic treatment in diluted detergent, deionized water, acetone and isopropanol IPA respectively for 20 minutes, the drying process is drying in a vacuum oven, and the ultraviolet-ozone treatment time is 15 minutes.
4. The method for secondary growth of perovskite grains through electric field regulation according to claim 1, wherein the mass ratio of 2,3,5, 6-tetrafluoro-7, 7',8,8' -tetracyanoquinodimethane doped poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] in the step 3 is 25%, and the concentration of the mixed solution is 1 mg/ml.
5. The method for secondary growth of perovskite grains regulated by an electric field according to claim 1, wherein the filter in the step 3 is a 0.45 μm polytetrafluoroethylene filter, the coating process is spin-coating on the ITO substrate at 5000rpm for 30 seconds, and the annealing process is annealing at 150 ℃ for 10 minutes in a glove box.
6. The method for secondary growth of perovskite grains controlled by an electric field according to claim 1, wherein the volume of the N, N-dimethylformamide in the step 4 is 60 μ l, and the coating process is spin-coating the poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate at 4000rpm for 10 seconds.
7. The method for secondary growth of perovskite grains through electric field regulation according to claim 1, wherein in the step 5, the volume ratio of N, N-dimethylformamide to dimethyl sulfoxide is 9:1, the concentration of lead iodide is 1.20M, the concentration of methyl amine iodide is 1M, the temperature of the stirring process is 60-70 ℃, the filter is a 0.45 μ M polytetrafluoroethylene filter, the coating process is that poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]/ITO substrate is coated for 30 seconds at the rotation speed of 4000rpm, and chlorobenzene CB is added at the 5 th second of the coating process.
8. The method for regulating secondary growth of perovskite grains by using the electric field as claimed in claim 1, wherein the deposition process in the step 6 is deposition at a rotating speed of 1000rpm for 60 seconds.
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CN109355708A (en) * 2018-10-29 2019-02-19 天津理工大学 A kind of two-dimentional hydridization perovskite crystal growing method of space limitation

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