CN110518084A - A kind of PERC battery and preparation method thereof of gallium local doping - Google Patents
A kind of PERC battery and preparation method thereof of gallium local doping Download PDFInfo
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- CN110518084A CN110518084A CN201910719750.7A CN201910719750A CN110518084A CN 110518084 A CN110518084 A CN 110518084A CN 201910719750 A CN201910719750 A CN 201910719750A CN 110518084 A CN110518084 A CN 110518084A
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 93
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 43
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 43
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 230000008018 melting Effects 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000001465 metallisation Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000000170 cell membrane Anatomy 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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Abstract
The invention discloses a kind of preparation methods of the PERC battery of gallium local doping, can be realized the high local doping concentrations and low sheet resistance of PERC battery.Invention additionally discloses a kind of PERC batteries of gallium local doping, with high local doping concentrations and low sheet resistance.A kind of preparation method of the PERC battery of gallium local doping, include the following steps: A, by gallium not less than gallium fusing point at a temperature of be patterned；B, patterned gallium is placed in silicon chip surface, and silicon chip surface is cooled to gallium melting temperature or less and is solidified；C, laser doping is carried out in the gallium graphics field of silicon wafer；D, the standby rear electrode that metallizes, rear electrode and the contact of gallium doped region are carried out.
Description
Technical field
The invention belongs to crystal silicon solar batteries field, it is related to PERC battery and its preparation side of a kind of gallium local doping
Method.
Background technique
PERC battery (Passive Emitter and Rear cell) is becoming the conventional skill of solar cell a new generation
Art.Fig. 1 shows conventional PERC battery structure.Shown in referring to Fig.1, routine PERC battery include stack gradually it is positive blunt
Change anti-reflection layer 2, silicon substrate 3, silicon oxide film 41, pellumina 42 and silicon nitride film 43, front electrode 1 penetrates front passivated reflection reducing
Layer 2 and form Ohmic contact with silicon substrate 3, rear electrode 5 through silicon oxide film 41, pellumina 42 and silicon nitride film 43 and and
Silicon substrate 3 forms Ohmic contact.Wherein, PERC cell backside silica/alumina/silicon nitride stack passivation dielectric layer, to electricity
Pool surface has excellent passivation effect, surface recombination current can be reduced to 15fA/cm2Hereinafter, significant increase battery
Transfer efficiency.But back metal region composite electric current is up to 600-1000fA/cm2, be PERC battery performance short slab and
The bottleneck that PERC battery efficiency is promoted.
At present when industry 5BB-SE-PERC battery volume production efficiency reaches 22.2 ~ 22.5%, back metal region is imitated at this time
The promotion high degree of rate is decided by the recombination current in back metal region.University of New South Wales proposes PERL structure,
Local heavy doping is carried out in cell metallization region, its implementation is by metallizing using super thick silica as exposure mask
Region carries out the recombination current that back metal region is greatly reduced in boron diffusion.Patent CN103996746A proposes first overleaf blunt
Change printing boron slurry on dielectric layer, is realized in laser ablation process and this layer of boron slurry is advanced to metallized area.But above-mentioned two
All there is respective drawback in kind method, the structures and methods of above-mentioned local heavily B doped largely improve boron in matrix and contain
Amount passes through the size of LID in the research discovery PERC battery to photo attenuation (light induced degradation, LID)
Directly related with boron content in matrix, the incorporation of excessive boron element reduces PERC battery outdoor application stability.
If reducing the recombination current in back metal region, need to promote doping concentration in metallized area, it is existing
Solution in, cannot be properly settled in volume production.The exposure mask thermal diffusion method that University of New South Wales uses, can only use
Silica is widely used in alumina medium passivating film in volume production now as backside passivation film, which can only bear
600 DEG C or so of temperature will cause aluminium oxide crystallization for 900 DEG C of boron diffusion and lose its passivation.The class that industry proposes
It is similar to patent CN103996746A and first prints boron slurry to realize the scheme of doping in laser-ablation processes, because of deielectric-coating in implementation
The barrier effect of layer substantially limits chanza, is unable to reach enough doping concentrations and depth, is far below New South Wales
10 Ω of the acquisition of university adulterate thin layer square resistance.
Summary of the invention
In view of the above technical problems, the present invention provides a kind of preparation method of the PERC battery of gallium local doping, can
Realize the high local doping concentrations and low sheet resistance of PERC battery.The present invention also provides a kind of PERC electricity of gallium local doping
Pond, with high local doping concentrations and low sheet resistance.
In order to achieve the above objectives, a kind of technical solution that the present invention uses is as follows:
A kind of preparation method of the PERC battery of gallium local doping, includes the following steps:
A, by gallium not less than gallium fusing point at a temperature of be patterned；
B, patterned gallium is placed in silicon chip surface, and silicon chip surface is cooled to gallium melting temperature or less and is solidified；
C, laser doping is carried out in the gallium graphics field of silicon wafer；
D, metallization preparation rear electrode, rear electrode and the contact of gallium doped region are carried out.
Preferably, in the step C, irradiating width of the laser on the gallium image conversion region of silicon wafer is less than or equal to gallium figure
The line width of shape.
Preferably, in the step C, the track of scanning irradiation of the laser on the silicon wafer and the shape of the gallium figure
Unanimously.
Preferably, in the step A, 29.76 DEG C are greater than or equal to the temperature that gallium is patterned；In the step B,
After patterned gallium is placed in silicon chip surface, silicon chip surface is cooled to 29.76 DEG C or less.
Preferably, in the step A, the characteristic width of gallium figure is 30 ~ 130 μm.
Preferably, in the step B, the rate of temperature fall of silicon chip surface is -20 ~ -5 DEG C/s.
Preferably, in the step B, gallium on silicon chip surface with a thickness of 2 ~ 20 μm.
Preferably, in the step B, patterned gallium is set by silk-screen printing, spraying or laser transfer method
In silicon chip surface.
Preferably, be formed with deielectric-coating on the surface of the silicon wafer, the preparation method further include be located at the step B it
Preceding following steps: silicon chip surface is handled by laser die sinking, by Jie at the correspondence gallium graphics field of silicon chip surface
Plasma membrane removal, silicon face is exposed；In the step B, patterned gallium is placed in the silicon face of the exposing of silicon chip surface
On.
The another technical solution that the present invention uses is as follows:
A kind of PERC battery of gallium local doping, including front passivated reflection reducing layer, silicon substrate and the back side deielectric-coating stacked gradually,
The PERC battery further includes front electrode and rear electrode, and the front electrode passes through the front passivated reflection reducing layer and and institute
It states silicon substrate and forms Ohmic contact, the rear electrode, which passes through, to be obtained back side deielectric-coating and form ohm with the silicon substrate to connect
It touches, gallium doped region, the gallium doped region contact of the rear electrode and the silicon substrate is formed on the silicon substrate.
Preferably, the gallium doped region is formed as follows: by gallium not less than gallium fusing point at a temperature of
It is patterned；Silicon chip surface is handled by laser die sinking, by the medium at the correspondence gallium graphics field of silicon chip surface
Film removal, silicon face is exposed；Patterned gallium is placed on the silicon face of the exposing of silicon chip surface, and by silicon chip surface
Gallium melting temperature or less is cooled to be solidified；Laser doping is carried out in the gallium graphics field of silicon wafer.
The present invention uses above scheme, has the advantages that compared with prior art
The characteristic of gallium metal low melting point is utilized in PERC battery of the invention and preparation method thereof, carries out when being higher than its fusing point
Graphically, after figure falls on silicon chip surface, cool down rapidly, using laser doping, realize that back metal region is high to mix
Miscellaneous concentration simultaneously obtains low thin layer sheet resistance, and sheet resistance can be down to 10 Ω；Using PERC battery prepared by this method, back metal
The recombination current for changing region can be reduced to 100-300fA/cm2, and PERC battery open circuit voltage can promote 5-7mV, and transfer efficiency mentions
Rise 0.3% or more.
Detailed description of the invention
It, below will be to attached drawing needed in embodiment description in order to illustrate more clearly of technical solution of the present invention
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of conventional PERC battery；
Fig. 2 is a kind of structural schematic diagram of PERC battery of embodiment.
Wherein；
1, front electrode；2, front passivated reflection reducing layer；3, silicon substrate；30, gallium doped region；4, back side deielectric-coating；41, silica
Film；42, pellumina；43, silicon nitride film；5, rear electrode.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.It should be noted that the explanation for these embodiments is used to help
Understand the present invention, but and does not constitute a limitation of the invention.In addition, involved in the various embodiments of the present invention described below
And to technical characteristic can be combined with each other as long as they do not conflict with each other.
The present embodiment provides a kind of PERC batteries and preparation method thereof of gallium local doping.Shown in referring to Fig.1, PERC electricity
Pond includes: front electrode 1, front passivated reflection reducing layer 2, silicon substrate 3, back side deielectric-coating 4 and rear electrode 5, wherein back side medium
Film 4 is by 43 up of three-layer of silicon oxide film 41, pellumina 42 and silicon nitride film.Front passivated reflection reducing layer 2, silicon substrate 3, silica
Film 41, pellumina 42 and silicon nitride film 43 stack gradually from top to bottom.Front passivated reflection reducing layer 2 is equipped with multiple extend downwardly
To the positive window of silicon substrate 3, form front electrode 1 at window, i.e., front electrode 1 pass through front passivated reflection reducing layer 2 and and
Silicon substrate 3 forms Ohmic contact.Rear electrode 5 is formed on silicon nitride film 43, and silicon nitride film 43, pellumina 42 and oxidation
Multiple windows for extending upwardly to 3 back side of silicon substrate are offered on silicon fiml 41,3 back side of silicon substrate are exposed, the portion of rear electrode 5
Quartile in window and and silicon substrate 3 formation Ohmic contact.Specifically, having multiple gallium doped regions 30 on silicon substrate 3, mix
Miscellaneous sheet resistance is 10 ~ 40 Ω；The window at the back side corresponds to gallium doped region 30 and opens up, and rear electrode 5 is specifically adulterated with the gallium of silicon substrate 3
Region 30 contacts.
The preparation process of above-mentioned gallium doped region 30 is as follows: first with one layer of gallium is graphically prepared, due to the fusing point of gallium
It is 29.76 DEG C, guarantees temperature >=29.76 DEG C of gallium when graphical, silicon wafer cools down rapidly after gallium figure falls on silicon chip surface
To 29.76 DEG C hereinafter, at this time gallium silicon chip surface be formed by curing figure (patterned method can be silk-screen printing, spraying, swash
The methods of light transfer), laser threat warner is then carried out in same position by laser and enters gallium metal doping in silicon wafer, most end form
It is adulterated at gallium local.Hereafter metallization process is carried out again completes the PERC battery preparation that back side local mixes gallium.
The preparation method of the PERC battery of the gallium local doping of the present embodiment is specific as follows:
Step 1: patterned metal gallium.Using the lower melting-point characteristic of gallium, guarantee graphical temperature >=29.76 DEG C, figure
Characteristic width is 30-130 μm.
Step 2: cooling solidification gallium figure rapidly.After so that gallium figure is fallen on silicon chip surface by silk-screen printing, by silicon wafer table
Face temperature be rapidly reduced to 29.76 DEG C hereinafter, rate of temperature fall be -20 ~ -5 DEG C/s(i.e. silicon chip surface each second temperature reduce by 5 ~
20 DEG C), gallium is cooled into solid metal at this time, is cured to silicon chip surface.Print thickness is 2-20 μm.The surface of silicon wafer can be
Naked silicon wafer, is also possible to the surface for having back side deielectric-coating, and back side deielectric-coating can be silica, aluminium oxide, silicon nitride, carbonization
One of the metal/non-metals such as silicon, zinc oxide, titanium oxide, tungsten oxide oxide, nitride or multiple combinations.When the silicon
There is passivating film on piece surface, and needs gallium figure and when silicon wafer directly contacts, can be existed one step ahead by the means that laser opens film
Gallium graphics field carries out laser and opens film, and deielectric-coating local is removed.
Step 3: laser doping.It is acted on using laser doping, carries out laser treatment again in graphics field, handle laser
Line width≤first time gallium figure line width, graphics shape are consistent；
Step 4: metallization.The metallization technology that a variety of industries such as silk-screen sintering, PVD, CVD, plating use can be used and realize gold
Belong to electrode preparation.
The existing scheme that the low sheet resistance of high local doping concentrations can be achieved can not be applied to the PERC electricity of aluminium oxide passivation
Chi Zhong, and the technical solution in other patents cannot achieve high doping concentration and low sheet resistance.Present invention utilizes gallium gold
Belong to eutectic dot characteristics, be patterned when being higher than its fusing point, after figure falls on silicon chip surface, cools down rapidly, carry out laser
Doping, realizes the high doping concentration in back metal region, while obtaining rudimentary thin layer sheet resistance, sheet resistance can be down to 10
Ω.Using PERC battery prepared by this method, the recombination current in back metal region can be reduced to 100-300fA/cm2,
PERC battery open circuit voltage can promote 5-7mV, and transfer efficiency promotes 0.3%abs or more.
The PERC battery for choosing the preparation of routine techniques route as a comparison case, tests the PERC in itself and the embodiment of the present invention
The quantum response curve of battery.It can be found that the quantum of the PERC battery of the embodiment of the present invention is responded due to comparative example, especially originally
The example long-wave response advantage of the PERC battery of inventive embodiments is more obvious.Further illustrate the PERC electricity of the embodiment of the present invention
Back metal region low recombination current characteristic outstanding in pond.
To the PERC battery of the embodiment of the present invention by X-ray energy spectrum analysis (EDS) in scanning electron microscope (SEM), SIMS,
XPS, be doped regional part analysis, it can be found that doped region gallium content be higher than silicon substrate and other undoped with region.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
It cans understand the content of the present invention and implement it accordingly in person skilled in the art, protection of the invention can not be limited with this
Range.Equivalent transformation or modification made by all principles according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of the PERC battery of gallium local doping, which comprises the steps of:
A, by gallium not less than gallium fusing point at a temperature of be patterned；
B, patterned gallium is placed in silicon chip surface, and silicon chip surface is cooled to gallium melting temperature or less and is solidified；
C, laser doping is carried out in the gallium graphics field of silicon wafer；
D, metallization preparation rear electrode, rear electrode and the contact of gallium doped region are carried out.
2. preparation method according to claim 1, which is characterized in that in the step C, gallium image conversion of the laser in silicon wafer
Irradiating width on region is less than or equal to the line width of gallium figure.
3. preparation method according to claim 1 or 2, which is characterized in that in the step C, laser is on the silicon wafer
Scanning irradiation track it is consistent with the shape of the gallium figure.
4. preparation method according to claim 1, which is characterized in that in the step A, temperature that gallium is patterned
More than or equal to 29.76 DEG C；In the step B, after patterned gallium is placed in silicon chip surface, silicon chip surface is cooled to
29.76 DEG C or less.
5. preparation method according to claim 1, which is characterized in that in the step A, the characteristic width of gallium figure is 30
~130μm。
6. preparation method according to claim 1, which is characterized in that in the step B, the rate of temperature fall of silicon chip surface
For -20 ~ -5 DEG C/s.
7. preparation method according to claim 1, which is characterized in that in the step B, gallium on silicon chip surface
With a thickness of 2 ~ 20 μm.
8. preparation method according to claim 1, which is characterized in that be formed with deielectric-coating, institute on the surface of the silicon wafer
Stating preparation method further includes the following steps before the step B: silicon chip surface is handled by laser die sinking, it will
Deielectric-coating removal at the correspondence gallium graphics field of silicon chip surface, silicon face is exposed；In the step B, by patterned gold
On the silicon face for belonging to the exposing that gallium is placed in silicon chip surface.
9. a kind of PERC battery of gallium local doping, including front passivated reflection reducing layer, silicon substrate and the back side medium stacked gradually
Film, the PERC battery further include front electrode and rear electrode, and the front electrode passes through the front passivated reflection reducing layer simultaneously
Ohmic contact is formed with the silicon substrate, the rear electrode passes through and obtains back side deielectric-coating and form ohm with the silicon substrate
Contact, it is characterised in that: gallium doped region, the gallium of the rear electrode and the silicon substrate are formed on the silicon substrate
Doped region contact.
10. PERC battery according to claim 9, which is characterized in that the gallium doped region is formed as follows:
By gallium not less than gallium fusing point at a temperature of be patterned；Silicon chip surface is handled by laser die sinking, by silicon
Deielectric-coating removal at the correspondence gallium graphics field on piece surface, silicon face is exposed；Patterned gallium is placed in silicon wafer table
On the silicon face of the exposing in face, and silicon chip surface is cooled to gallium melting temperature or less and is solidified；In the gallium graph area of silicon wafer
Domain carries out laser doping.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910719750.7A CN110518084B (en) | 2019-08-06 | 2019-08-06 | Gallium local-area-doped PERC (Positive electrode collector) battery and preparation method thereof |
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