CN110494929A - Ionising radiation converter and its manufacturing method with cross-linked structure - Google Patents
Ionising radiation converter and its manufacturing method with cross-linked structure Download PDFInfo
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- CN110494929A CN110494929A CN201780089174.1A CN201780089174A CN110494929A CN 110494929 A CN110494929 A CN 110494929A CN 201780089174 A CN201780089174 A CN 201780089174A CN 110494929 A CN110494929 A CN 110494929A
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- 230000005855 radiation Effects 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 230000000155 isotopic effect Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000002285 radioactive effect Effects 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The present invention relates to the energy converters that the ionising radiation of isotopic source is converted into electric (EMF).The difference of the isotopic source and capacitor and battery is that the energy of unit volume is much greater, but the transmission power of unit time is very low.The isotopic source can directly charge in the case where no solar radiation for high power battery or capacitor, while light-weight and size is small.The service life of isotope converter is determined by the half-life period of exposed material.It uses63The service life of Ni is about 100 years.The present invention is directed to increase the specific power output of ionising radiation converter, simplifies its technique and reduce its cost.Above-mentioned target is realized by using specific β radiation converter structure and its production technology, and according to the technique, the maximum area of isotope emitting surface can be obtained using the minimum area of the planar horizontal p-n junction of high quality.Above-mentioned advantage minimizes dark current, to increase the open-circuit voltage and power density of the converter.
Description
Technical field
The present invention relates to the converters that can convert ionising radiation to electric (EMF), can be used for unmanned plane during flying, intense explosion
The fields such as night indicator, medicine (pacemaker) in region such as mine, Off Limits.
The high-energy density that the importance of these power supplys depends greatly on radioactive isotope chemical element (can
Compare favourably with the energy density of lithium battery), and a possibility that radioisotope battery is included in MEMS, the technology
Recently it is rapidly developed.It is necessary for many fields based on the independent current source of beta voltaic cell:
In medical domain, the implanted sensor and pacemaker that are implanted directly into the heart (pacemaker) of patient are come
It says and is necessary.The durable power supply of long service life (the independent service life is not shorter than 25 years) can be eliminated in duplicate surgical operation more
Change the necessity of pacemaker power supply.
It is necessary for the sensor for being embedded in building.Such as the weather station power supply for being located at Off Limits,
Self-recorder can be used independently to measure temperature, atmospheric pressure and wind speed.
In space engineering field, more specifically, being necessary for the accessory power supply in navigation satellite.Because too
In the air, power supply should generate electricity for a long time under the conditions of burst and very violent temperature change.
In war industry field, for as the ground installation and unmanned plane during flying for information and other tactical purposes
The microrobot of power supply is necessary.
Background technique
A kind of known (US on August 14th, 20140225472,2014 open) device architecture, which includes low-mix
Miscellaneous n (р) conductive-type semiconductor chip, the semiconductor wafer include on the surface thereof equipped with conductive electrode, that is, cathode (anode)
The n of heavy doping+(р+) region, the p of heavy doping is formed on chip top+(n+) region, р-n knot is formed with semiconductor wafer, on surface
p+(n+) region is equipped with one layer of insulation dielectric and conductive anode, i.e., cathode (anode), conductive anode are radioactive isotope.
The shortcomings that above structure, is that the volume of the semiconductor material of raying is relatively since the surface area of raying is small
It is small；The penetration depth for ionizing β radiation is limited (less than 25 microns)；Due to fault of construction existing during the vanadium doping of workspace,
Cause the service life of minority carrier short.
The known semiconductor converter (RU on June 27th, 2452060,2014 is open) that β radiation is converted to electricity, wherein
Semiconductor wafer has the net grain surface in multiple penetrability microchannels form, and the microchannel has round, ellipse, rectangle
Or other arbitrary shapes, the wall thickness h between the microchannel are suitable with the width of microchannel.The surface of the microchannel wall and
The front and back of semiconductor wafer all has microtexture, and in addition to its side, almost entire semiconductor wafer surface all includes shape
At doped layer and diode structure that р-n is tied, doped layer is covered with radioactivity semiconductor layer, which is used as two
Electric current collection contact in pole pipe structure, and doped layer is β radiation source, the doped layer and bottom replicate the shape of net grain surface
Shape is located at side surface with the contact point of the base area of the semiconductor wafer.
The shortcomings that semiconductor converter, is production technology complexity, is penetrated using solid radioisotope filling logical
Road.The net grain surface of penetration channel is with low quality, therefore leaks seriously, cannot achieve the high-specific-power of converter.
The prototype of the first object of the present invention is semiconductor β-voltaic converter 3D structure, converts radiation into electricity
(US on August 21st, 20080199736,2008 open), wherein having on the top surface of low-doped n (р) conductive-type semiconductor chip
The surface of vertical channel, the vertical channel includes the p of heavy doping+(n+) region, vertical р-n is formed with the semiconductor wafer
Knot, is filled with the radioisotope material for forming electrode in the channel, i.e., the anode (cathode) of the described converter diode,
The horizontal heavy doping n of the chip bottom surface+(p+) contact layer is located at the surface where anode (cathode) metal electrode.
The shortcomings that known structure is that surface quality is low, therefore there is high-intensitive reversed р-n junction current in microchannel, is led
Cause cannot achieve the high-specific-power of converter.
The prototype of second theme of the invention is a kind of method of 3D structure for manufacturing semiconductor diode, the semiconductor
Diode is used as will63The β radiation of Ni isotope is converted into β voltaic converter (the US August 21 in 20080199736,2008 of electricity
Day is open), it the described method comprises the following steps: forming horizontal heavy doping n in the bottom surface of low-doped n (р) conductive wafer+(p+)
Conductive layer forms vertical channel, passage wall surface doping, deposition anode (cathode) electrode by the top surface of etched semiconductor wafer
Radioisotope metals to the top surface and channel of the chip in, and deposition anode (cathode) metal layer is to the chip bottom
Face.
The shortcomings that known method, is to synthesize the complexity of р-n knot in channel and repeatability is insufficient, reduces converter
Efficiency, it is most important that, р-n knot high-intensitive dark current (ID) greatly reduce the reactive voltage (U of converterid) and most
Big output power (Pmax), because
Pmax=Uid×Isc×FF
Wherein Uid=Φ t × Ln(Isc/IS+ 1), Φ t indicates calorific potential, IscIndicate the short circuit current that radioactive radiation generates.
Summary of the invention
First topic of the present invention has the technical effect that due to radioactive isotope (Sem) emitting surface it is big, converter
The ENERGY E of unit volumeuIncrease, and then the area (S of р-n knotр n, b) increase.
The technical effect of first theme of the invention is achieved by the following scheme.
N (р) conductive-type semiconductor chip that a kind of ionising radiation converter with cross-linked structure includes weak doping is designed,
It include vertical channel in it, one end of the vertical channel is connected to the wafer surface, and the passage wall surface includes
The p of heavy doping+(n+) conductive area, vertical р-n, which is formed, with the semiconductor wafer ties.
Filled with conductive radioisotope material in the channel, form the electrode of the converter diode, i.e., it is positive
Pole (cathode), the bottom surface of the chip include the n of horizontal heavy doping+(p+) conductive layer, the surface of the conductive layer includes metal electricity
Pole, the i.e. anode (cathode) of converter.
The top surface of the chip includes the p to form the horizontal heavy doping of horizontal р-n knot+(n+) conductive area.It is described vertical
The surface in channel is low-doped and has n (p) conductivity type, wherein one end of each vertical channel is connected to the chip
Bottom surface, and the other end, i.e., the bottom of each vertical channel keep certain distance, the distance with the top surface of the chip
Greater than the total depth that horizontal р-n is tied described in the space charge region formed as it.
The technical effect of second theme of the present invention includes the simplification of converter manufacturing process.
The technical effect of second theme of the invention is achieved by the following scheme.
The manufacturing method includes the n that horizontal heavy doping is formed on the bottom surface of low-doped n (p) conductive wafer+(p+)
Conductive layer forms vertical channel, passage wall surface doping by the top surface of etched semiconductor wafer, and anode (cathode) electrode is put
In injectivity isotope metal deposit to the top surface and channel of chip, and deposition anode (cathode) electrode metal layer is to the chip bottom
Face.
The vertical channel is formed by etching the bottom surface of low-doped n (p) conductive wafer, then logical
Road wall surface adulterates donor (receptor) impurity, and forms horizontal p-n by adulterating receptor (donor) impurity to the wafer top surface
Knot.
Illustrate the present invention below by way of the attached drawing for showing converter design example, wherein Fig. 1 shows turning for first structure
The cross-sectional view of parallel operation structure example, Fig. 2 shows the bottom view of the converter structure example of first structure, Fig. 3 shows the second structure
Converter structure example cross-sectional view, Fig. 4 shows the bottom view of the converter structure example of the second structure.
What the present invention designed is that converter includes low-doped n (р) conductive-type semiconductor chip (1), the bottom of the chip
Face includes n+(р+) conductivity type contact layer (2), the chip includes vertical channel (3), wherein one end of each vertical channel
It is connected to the bottom surface of the chip, the wafer top surface includes the n of horizontal р-n knot+(р+) conductive area (4), wherein the area
Domain and the chip form space charge region (5), the n+(р+) surface of conductive area includes forming diode sun
The metal radioactive isotope of pole (6), the bottom surface of the chip and the channel include the metal radiation for forming the cathode (7)
Property isotope.
The β radiation that the working principle of converter of the present invention is based upon isotope such as nickel, tritium, strontium, cobalt etc. makes semiconductor
Material (such as silicon) ionization.Since the electron hole pair that irradiation is formed is separated in space charge region by р-n junction field, and
The р of the converter (photovoltaic EMF)+And n+Potential difference is generated between region.Meanwhile part electron hole pair can be grown in diffusion
It spends at distance by the р-n junction field alternately accumulated in quasi-neutrality region.
Have confirmed that effective (best) operation of the converter needs the silicon of high quality, wherein minority carrier LdExpansion
Dissipate the thickness that length is greater than silicon wafer, i.e. Ld> hw。
The distance between described channel has to be larger than63The β radiation penetration depths of Ni isoelectric, the electronics are averaged
Energy is E=17.5keV.
Specific embodiment
Different β converter design embodiments may be different on technical parameter.For example, Fig. 1 and shown in Fig. 2 turn
Parallel operation can be configured to maximum unit power, but since the nickel content in the channel is very big, fairly expensive.Fig. 3 and
What converter shown in Fig. 4 needed63Ni content wants much less, therefore price is lower, while having lower unit power.
Converter design embodiment shown in Fig. 1 to Fig. 4 can be 5kOhm × cm in resistivity, diameter is 100 millimeters,
Thickness hwIt is 2 milliseconds and diffusion length L for 420 microns, (100) direction, carrier lifetime τdP-doped silicon greater than 1.0 centimetres
It is realized in grade KEF chip.
The isotopic source is optional freely63Ni, with 50 years long half-lifts and launching electronics radiated, the electronics spoke
The average energy penetrated is 17keV, ceiling capacity 64keV, hardly harm health.The electron energy is lower than the defects of silicon
Being formed can 160keV.It is about 3.0 microns that average energy, which is the absorption depth of the electronics of 17keV, in silicon, and 90% absorption depth is
12 microns.The size should be realized by the way that design p-n junction is deep with space-charge region size, and conventional silicon structure can be realized.
It should be noted that other materials is also used as radioactive isotope, such as tritium etc..It is equally important that the radiation source is not
It is necessarily β radiation source, is also possible to α radiation source, such as238U, average energy 6MeV, silicon penetration depth are about 20-25 micro-
Rice will not endanger р-n knot.
The manufacturing method of converter of the invention includes processing step below:
The thermal oxide (to 0.6 micron) of silicon wafer batch surface, resistivity are 5kOhm × cm, and diameter is 100 millimeters, direction
For (100), " 0 " photoetching is carried out at the back side of silicon wafer, by reactive ion beam etching and phosphorus diffusion to maskant surface, is formed vertical
Channel.
First time photoetching is for the n in wafer top surface+Protection zone, phosphorus diffusion, the n in the wafer top surface (face)+Protection
N in the formation in region and the chip bottom surface+The formation of contact layer.
The boron ion that dosage D is 600 micro- centilitres and ENERGY E is 30keV adulterates the р to be formed+Second of photoetching of contact zone,
Thermal annealing is carried out to the impurity of injection under conditions of temperature T is 1050 degrees Celsius, time t is 40 minutes, is 950 in temperature T
Under conditions of degree Celsius, thermal oxide layer is grown on the semiconductor wafer, time t is 40 minutes, with a thickness of 0.3 micron.
The third time photoetching that p layers in the р-n to be formed knot are adulterated by boron ion, at a temperature of temperature T is 950 degrees Celsius
Thermal annealing is carried out to the impurity of injection, time t is 40 minutes.
Contact hole is to р+The fourth lithography of layer.
In the deposited on top of the chip63Ni isotope simultaneously carries out the 5th photoetching to form the anode.
The bottom of wafer is thinned by chemically mechanical polishing, then by radioactivity63Ni is electrolysed to the chip bottom surface, with
The chip is chipped afterwards.
It is worth noting that, there is the embodiment of a simpler process route, that is, exist63Ni isotope deposition is described in
After the top surface of chip, photoetching is carried out to vertical channel at the end of process flow.But the mode does not include wafer grinding
Operation.
In63Ni isotopic radiation power and dose power P are 2.7mC/cm2Planar design under, to cross-linked structure
Silicon substrate converter carry out experimental study show be located at the wafer polishing top surface on Spn.plThe horizontal plane in region
р-n knot has weaker dark leakage current:
Id.pl=0.5nA/cm2
The leakage current of the homalographic р-n knot formed in the channel wants three orders of magnitude greater:
Ilk.b=1 μ A
This corresponds to plane р-n and ties Uid.pl=0.1V and ontology р-n ties Uid.bThe reactive voltage of=4mV:
Uid.pl=Φ t × Ln(Isc/Id+ 1) ,=0.026 × Ln(27/0.5+1)=0.1V
Wherein, Φ t indicates calorific potential, IscIndicate the short circuit current that radioactive radiation generates.
The converter power is determined by following relationship:
Pmax=Uid×Isc×FF
Plane р-n is tied, Pmax.plFor 1.7 nanowatts, ontology р-n is tied, Pmax.bFor 0.08 nanowatt.
Technological merit of the invention is the increase of the unit power and efficiency of the converter and the simplification of its technique
With lower price.
Above-mentioned advantage is to realize that the technique has in three-dimensional by the design of the β radiation converter and its technique
S is realized in the prototype of structureisLocate the basic possibilities of the equivalent transmission power in isotope surface；But the ionization current receives
Device is level (non-perpendicular) р-n knot, has relatively small area (S on the high quality polished top surface of the chipр-n,nn),
Dark current is minimized, and increases reactive voltage, therefore the unit power of the converter increases.
Claims (2)
1. a kind of ionising radiation converter with cross-linked structure, n (p) the conductive-type semiconductor chip including weak doping, in
Comprising the vertical channel formed from top to the wafer surface, the passage wall surface has the p of heavy doping+(n+) conductivity type,
The channel is filled with conductive radioisotope material, forms the electrode of the converter diode, i.e. anode (cathode), institute
The bottom surface for stating chip includes the n of horizontal heavy doping+(p+) conductive area, horizontal p-n junction is formed, the top surface of the chip includes
The p of horizontal heavy doping+(n+) conductive area, horizontal p-n junction is formed, wherein the surface of the vertical channel is low-doped and has
There is n (p) conductivity type, one end of each vertical channel is connected to the bottom surface of the chip, and the other end, i.e., each described to hang down
The bottom of straight channel keeps certain distance with the top surface of the chip, and the distance is greater than the space charge region formed by it
Described in horizontal p-n junction total depth.
2. a kind of manufacturing method, the n including forming horizontal heavy doping on the bottom surface of low-doped n (p) conductive wafer+(p+)
Conductive layer forms vertical channel, passage wall surface doping by the top surface of etched semiconductor wafer, and anode (cathode) electrode is put
In the metal-doped top surface and channel to chip of injectivity isotope, deposition anode (cathode) metal layer to the chip bottom surface,
Described in vertical channel be to be formed by etching the top surface of low-doped n (p) the conductive-type semiconductor chip, in conduit wall
Surface doping donor (receptor) impurity, and horizontal p-n junction is formed by adulterating donor (receptor) impurity to the wafer top surface.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2017103167A RU2659618C1 (en) | 2017-01-31 | 2017-01-31 | Converter of ionizing radiations with net bulk structure and method of its production |
| RU2017103167 | 2017-01-31 | ||
| PCT/RU2017/000663 WO2018143838A1 (en) | 2017-01-31 | 2017-09-11 | Ionizing radiation converter with cross-linked structure and its fabrication method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110494929A true CN110494929A (en) | 2019-11-22 |
Family
ID=62815832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780089174.1A Pending CN110494929A (en) | 2017-01-31 | 2017-09-11 | Ionising radiation converter and its manufacturing method with cross-linked structure |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2020507073A (en) |
| KR (1) | KR102595089B1 (en) |
| CN (1) | CN110494929A (en) |
| DE (1) | DE112017006974T5 (en) |
| EA (1) | EA201900377A1 (en) |
| RU (1) | RU2659618C1 (en) |
| WO (1) | WO2018143838A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113223743A (en) * | 2021-05-08 | 2021-08-06 | 西北核技术研究所 | Alpha radioactive source nuclear battery based on micropore array collimator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114203330A (en) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | Ultrathin nickel-63 radiation source and preparation method and application thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE112017006974T5 (en) | 2019-10-17 |
| RU2659618C1 (en) | 2018-07-03 |
| KR102595089B1 (en) | 2023-10-26 |
| WO2018143838A1 (en) | 2018-08-09 |
| EA201900377A1 (en) | 2019-12-30 |
| KR20190109495A (en) | 2019-09-25 |
| JP2020507073A (en) | 2020-03-05 |
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