CN104051050A - Parallel type PIN type alpha irradiation battery and preparing method thereof - Google Patents
Parallel type PIN type alpha irradiation battery and preparing method thereof Download PDFInfo
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- CN104051050A CN104051050A CN201410301092.7A CN201410301092A CN104051050A CN 104051050 A CN104051050 A CN 104051050A CN 201410301092 A CN201410301092 A CN 201410301092A CN 104051050 A CN104051050 A CN 104051050A
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Abstract
The invention discloses a parallel type PIN type alpha irradiation battery and a preparing method thereof to mainly solve the problems that a current nuclear battery is low in energy converting ratio and output power. The parallel type PIN type alpha irradiation battery comprises an upper PIN junction, a lower PIN junction and alpha irradiation sources, wherein the upper PIN junction and the lower PIN junction are connected in parallel, the lower PIN junction comprises an N type ohmic contact electrode, an N type highly-doped 4H-SiC substrate, an N type lightly-doped epitaxial layer, a P type highly-doped epitaxial layer and a P type ohmic contact electrode from bottom to top in sequence, the top-to-bottom structural distribution of the PIN junction is the same as the bottom-to-top structural distribution of the lower PIN junction, at least two grooves are formed in each PIN junction, and the alpha irradiation sources are placed in the grooves respectively. The two PIN junctions make contact with each other through the P type ohmic contact electrode, and the upper groove and the lower groove are in mirror symmetry and are communicated with each other. The parallel type PIN type alpha irradiation battery has the advantages that the contact area between the irradiation sources and a semiconductor is large, the nuclear raw material utilization rate and the energy collection rate are high, and the output voltage of the battery is large, and the battery can provide power for a small circuit continuously or can provide power for polar regions, deserts and other areas.
Description
Technical field
The invention belongs to microelectronic, relate to semiconductor device structure and preparation method, specifically a kind of silicon carbide-based parallel PIN type alpha irradiation battery and preparation method thereof, can be used for power supply and the unattended occasion for a long time such as the small circuit such as minute mechanical and electrical system and Aero-Space, deep-sea, polar region.
Technical background
Along with the demand of people for low-power consumption, long-life, high reliability and small size power-supply unit, and the concern to nuclear waste disposal, minisize nuclear battery becomes and receives much concern.Minisize nuclear battery is because its outstanding feature can be used to solve the long-term powerup issue of robot, implantable MEMS, wireless sensor node network, artificial cardiac pacemaker and Portable movable electronic product etc.And be expected to replace solar cell and thermoelectric (al) type radioisotope battery, at space flight and aviation field, solve micro-/receive the long-term powerup issue of satellite, deep space unmanned probing device and ion propeller etc.
Nineteen fifty-three, beta (β-Particle) radial energy that utilizes isotope decay to produce produced electron-hole pair in semiconductor by Rappaport research discovery, and this phenomenon is called as β-VoltaicEffect.Nineteen fifty-seven, first Elgin-Kidde is used in β-VoltaicEffect power supply supply side, successfully produces first radioisotope micro battery β-VoltaicBattery.From 2006, along with the progress of semiconductor material with wide forbidden band SiC technology of preparing and technology, there is the relevant report of the radioisotope micro battery based on SiC.
The Schottky junction type nuclear cell based on SiC that the people such as Guo Hui propose is disclosed by Zhang Lin in Chinese patent CN101325093A.Because schottky contact layer in this schottky junction nuclear battery covers whole cell area, incident particle arrives after device surface, capital is subject to stopping of schottky contact layer, only has part particle can enter device inside, and the particle that enters depletion region just can have contribution to the output power of battery.Therefore, the loss of the nuclear battery projectile energy of this structure is large, and energy conversion efficiency is lower.
Document " Demonstrationofa4HSiCbetavoltaiccell " has been introduced the C.I.Tomas by USA New York Cornell university, M.V.S.Chandrashekhar, and the people such as HuiLi have proposed silit PN junction formula nuclear battery.The substrate that this structure adopts is the highly doped substrate of P type, and immature in the existing technique of its Grown epitaxial loayer, therefore, easily introduces surface imperfection, and device creepage is large, and energy conversion rate is lower.
Document " Demonstration of a tadiation resistant; hight efficiency SiC betavoltaic " has been introduced the C.J.Eiting by New Mexico Qynergy Corporation, V.Krishnamoorthy and S.Rodgers, the people such as T.George have proposed silit p-i-n eliminant nuclear battery jointly, as shown in Figure 1.This PIN nuclear battery is followed successively by from top to bottom, radioactive source 7, P type Ohm contact electrode 6, the highly doped SiC layer 4 of P type, P type SiC layer 3, intrinsic i layer 2, the highly doped SiC substrate 1 of N-shaped and N-type Ohm contact electrode 5.In this structure, only have the raw charge carrier of irradiation in depletion layer and in a near minority diffusion length to be collected.And, for avoiding Ohm contact electrode to stop incident ion, P type Ohmic electrode is made in to a corner of device, make from P type Ohmic electrode the raw charge carrier of the irradiation away from transport process by compound, reduce energy transformation ratio, reduced output current and the output voltage of battery.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, a kind of parallel PIN type alpha irradiation battery and preparation method thereof is proposed, the barrier effect of high-energyα-particle αsource being given off with elimination metal electrode, increase αsource and semi-conductive contact area simultaneously, improve the utilization factor of αsource, thereby improve output current and the output voltage of battery.
Technical scheme of the present invention is achieved in that
One. parallel PIN type alpha irradiation battery of the present invention, comprising: PIN unit and αsource, is characterized in that:
Described PIN unit adopts by top, below two PIN knots parallel connection and forms; The PIN knot of below is followed successively by from bottom to top, N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, the low-doped epitaxial loayer 2 of N-type, the highly doped epitaxial loayer 3 of P type and P type Ohm contact electrode 4, the PIN knot of top is followed successively by from bottom to top, P type Ohm contact electrode 4, the highly doped epitaxial loayer 3 of P type, the low-doped epitaxial loayer 2 of N-type, the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5;
The one side that described two PIN tie its P type Ohm contact electrode 4 contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with at least two grooves 6, the interior αsource 7 that is all placed with of each groove 6, to realize making full use of high-energyα-particle.
As preferably, described αsource 7 adopts the plutonium element that americium element that relative atomic masses are 241 or relative atomic mass are 238, i.e. Am
241or Pu
238.
As preferably, the degree of depth h of described groove 6 meets m+q<h<m+n+q, and wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and n is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.
As preferably, the width L of described groove 6 meets L≤2g, and wherein, g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m.
As preferably, the spacing d of described adjacent two grooves 6 meets d>=i, and wherein, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m.
As preferably, it is lx10 that described substrate 1 adopts doping content
18cm
-3n-type 4H-SiC, the highly doped epitaxial loayer 3 of P type and the low-doped epitaxial loayer 2 of N-type are 4H-SiC extension, wherein the doping content of the highly doped epitaxial loayer 3 of P type is 1x10
19～5x10
19cm
-3, the doping content of the low-doped epitaxial loayer 2 of N-type is 1x10
15～2x10
15cm
-3.
Two. preparation method of the present invention comprises the following steps:
(1) make lower PIN knot:
1.1) clean: SiC print is cleaned, to remove surface contaminant;
1.2) the low-doped epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10
15～2x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5～10 μ m;
1.3) the highly doped epitaxial loayer of growing P-type: utilizing chemical vapor deposition CVD method is 1x10 in the low-doped epi-layer surface epitaxial growth of N-type one deck doping content
19～5x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 1～2 μ m;
1.4) deposit P type Ohm contact electrode: utilize in the highly doped epi-layer surface of P type the Ni metal level that electron-beam vapor deposition method deposit a layer thickness is 300nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
1.5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ni of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ni metal level to corrosion window place corrodes, and exposes the highly doped epitaxial loayer of P type, obtains P type Ohm contact electrode and guttering corrosion window;
1.6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped SiC epitaxial loayer of the P type exposing is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
1.7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain being with fluted PIN knot;
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that upper PIN knot and the P type Metal Contact electrode of lower PIN knot are pressed together, complete the making of parallel PIN type alpha irradiation battery.
The present invention compared with prior art tool has the following advantages:
1. the present invention is placed in groove by αsource, and the high-energyα-particle that αsource is produced is directly injected the space charge region of PIN knot, has reduced the energy loss of high-energyα-particle, thereby has improved the output current of collection of energy rate and battery;
2. the present invention is because groove width is not more than the twice of high-energyα-particle average incident degree of depth in αsource material that αsource discharges, significantly reduce the energy attenuation of high-energyα-particle in αsource inside, improved the output current of collection of energy rate and battery;
3. the present invention is because the energy gap of the backing material 4H-SiC adopting is larger than the energy gap of traditional Si, and radiation-resisting performance is better, can reduce the damage of high-energyα-particle to device, improves the operating voltage of battery, extends the serviceable life of battery simultaneously;
4. the present invention, due to by two in parallel placements of PIN knot, has improved the output voltage of battery.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of existing PIN nuclear battery;
Fig. 2 is the schematic cross-section of the parallel PIN type of the present invention alpha irradiation battery;
Fig. 3 is the schematic flow sheet that the present invention makes parallel PIN type alpha irradiation battery.
Embodiment
With reference to Fig. 2, irradiation battery of the present invention, comprising: PIN unit and αsource, and PIN unit consists of the parallel connection of upper and lower two PIN knot; The PIN knot of below is followed successively by from bottom to top, N-type Ohm contact electrode 5, the highly doped 4H-SiC substrate 1 of N-type, the low-doped epitaxial loayer 2 of N-type, the highly doped epitaxial loayer 3 of P type and P type Ohm contact electrode 4, the PIN knot of top is followed successively by from bottom to top, P type Ohm contact electrode 4, the highly doped epitaxial loayer 3 of P type, the low-doped epitaxial loayer 2 of N-type, the highly doped 4H-SiC substrate 1 of N-type and N-type Ohm contact electrode 5, these two PIN tie its P type Ohm contact electrode 4 and contact by bonding method; In each PIN knot, be provided with at least two grooves 6, its degree of depth h meets m+q<h<m+n+q, wherein m is the thickness of the highly doped epitaxial loayer 3 of P type, and n is the thickness of the low-doped epitaxial loayer 2 of N-type, and q is the thickness of P type Ohm contact electrode 4.Its width L meets L≤2g, and g is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m, and the spacing d of adjacent two grooves 6 meets d>=i, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource 7 in 4H-SiC, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m; Groove in upper and lower PIN knot forms Mirror Symmetry, the integrative-structure mutually connecting; αsource 7 is placed in groove 6.
Battery in working order under, the most of high-energyα-particle radiating from αsource is directly injected into the space charge region of the highly doped epitaxial loayer 3 of P type and low-doped epitaxial loayer 2 near interfaces of N-type, and then excites charge carrier, forms output current.
With reference to Fig. 3, the method that the present invention makes parallel PIN type alpha irradiation battery provides following three embodiment:
Embodiment 1, and preparing αsource is Am
241, there is the parallel PIN type alpha irradiation battery of two grooves.
Step 1: make lower PIN knot.
(1) clean 4H-SiC print, to remove surface contaminant, as shown in Fig. 3 (a).
(1.1) by doping content, be lx10
18cm
-3highly doped N-shaped 4H-SiC substrate print at NH
4oH+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove sample surfaces organic remains;
(1.2) the 4H-SiC print of removing after surperficial organic remains is re-used to HCl+H
2o
2reagent soaks sample 10min, takes out post-drying, to remove ionic contamination.
(2) the low-doped epitaxial loayer of epitaxial growth N-type, as shown in Fig. 3 (b).
On SiC print after cleaning, utilize the N-type doped epitaxial layer of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and obtaining nitrogen doped concentration is 1x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5 μ m.
(3) the highly doped epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
On the low-doped epitaxial loayer of N-type of growth, utilize the highly doped epitaxial loayer of P type of chemical vapor deposition CVD method epitaxial growth aluminium doping, its process conditions are: epitaxial temperature is 1570 ℃, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminium doping content is 1x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 1 μ m.
(4) depositing metal contact electrode, as shown in Fig. 3 (d).
(4.1) the SiC print completing after the highly doped outer layer growth of P type is carried out to RCA standard cleaning;
(4.2) print after cleaning is put on the microslide of electron beam evaporation deposition machine, adjustment microslide is 50cm to the distance of target, and reaction chamber pressure is evacuated to 5 * 10
-4pa, adjusting line is 40mA, the Ni metal level that is 300nm in surface deposition a layer thickness of the highly doped epitaxial loayer of the P of SiC print type;
(4.3) utilize electron-beam vapor deposition method, at the substrate Si C Ni metal level that back side deposition thickness of extension is not 300nm;
At (4.4) 1100 ℃, in nitrogen atmosphere, short annealing is 3 minutes.
(5) on the Ni metal level of SiC extension one outgrowth, carve structure graph window, as shown in Fig. 3 (e).
(5.1) spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of two grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
(5.2) utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the highly doped epitaxial loayer of P type, obtains the etching window of P type Ohm contact electrode and groove.
(6) etching groove, as shown in Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 6.5 μ m, and width is 5 μ m, and spacing is two grooves of 12 μ m.
(7) place αsource, as shown in Fig. 3 (g).
The method that adopts deposit or smear is placed αsource Am in each groove
241, obtain being with fluted lower PIN knot.
Step 2: PIN knot in making.
Repeating step (1), to step (7), obtains PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain parallel PIN type alpha irradiation battery, as shown in Fig. 3 (h).
Embodiment 2, and preparing αsource is Am
241, there is the parallel PIN type alpha irradiation battery of five grooves.
Step 1: make lower PIN knot.
1) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1) of embodiment 1.
2) the low-doped epitaxial loayer of epitaxial growth N-type, as Fig. 3 (b).
On SiC print after cleaning, utilize the N-type doped epitaxial layer of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen, and completing nitrogen doped concentration is 1.5x10
15cm
-3, thickness is the growth of the low-doped epitaxial loayer of N-type of 8 μ m.
3) the highly doped epitaxial loayer of epitaxial growth P type, as shown in Fig. 3 (c).
On the low-doped epitaxial loayer of N-type of growth, utilize the highly doped epitaxial loayer of P type of chemical vapor deposition CVD method epitaxial growth Al-doping, its process conditions are: epitaxial temperature is 1570 ℃, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and completing aluminium doping content is 3x10
19cm
-3, thickness is the growth of the highly doped epitaxial loayer of P type of 1.5 μ m.
4) depositing metal contact electrode, as Fig. 3 (d).
This step is identical with the step (4) of embodiment mono-.
5) on the Ni metal level of SiC extension one outgrowth, carve structure graph window, as Fig. 3 (e).
5.1) spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of five grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window;
5.2) utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the P type SiC of extension, obtains the etching window of P type Ohm contact electrode and groove.
6) etching groove, as Fig. 3 (f).
Utilize inductively coupled plasma ICP lithographic technique, on the highly doped epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 10 μ m, and width is 10 μ m, and spacing is five grooves of 20 μ m.
7) place αsource, as Fig. 3 (g).
This step is identical with the step (7) of embodiment mono-.
Step 2: PIN knot in making.
Repeating step 1) to step 7), obtain PIN knot.
Step 3: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain parallel PIN type alpha irradiation battery, as Fig. 3 (h).
Embodiment 3, and preparing αsource is Pu
238, there is the parallel PIN type alpha irradiation battery of 10 grooves.
Steps A: PIN knot in making.
(A1) clean 4H-SiC print, to remove surface contaminant, as Fig. 3 (a).
This step is identical with the step (1) of embodiment 1.
(A2) on the SiC print after cleaning, utilize the low-doped epitaxial loayer of N-type of chemical vapor deposition CVD method epitaxial growth nitrogen doping.Its process conditions are: epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and magazine source is liquid nitrogen.Obtaining nitrogen doped concentration is 2x10
15cm
-3, thickness is that the low-doped epitaxial loayer of the N-type of 10 μ m is as Fig. 3 (b).
(A3) on the low-doped epitaxial loayer of N-type of growth, utilize the highly doped epitaxial loayer of P type of chemical vapor deposition CVD method epitaxial growth Al-doping, its process conditions are: epitaxial temperature is 1570 ℃, pressure is 100mbar, reacting gas is silane and propane, carrier gas is pure hydrogen, impurity source is trimethyl aluminium, and obtaining aluminium doping content is 5x10
19cm
-3, thickness is that the highly doped epitaxial loayer of P type of 2 μ m is as Fig. 3 (c).
(A4) deposit Ohm contact electrode, as Fig. 3 (d).
This step is identical with the step (4) of embodiment mono-.
(A5) spin coating one deck photoresist on the Ni layer on surface of metal of SiC extension one outgrowth, is made into reticle according to the position of 10 grooves of battery, with electron beam, photoresist is exposed, and forms corrosion window; Then utilize reactive ion technique etching N i metal level, reacting gas adopts oxygen, exposes the highly doped epitaxial loayer SiC of P type of extension, obtains the etching window of P type Ohm contact electrode and groove as Fig. 3 (e).
(A6) utilize inductively coupled plasma ICP lithographic technique, on the highly doped epitaxial loayer of P type exposing at etching groove window, carving the degree of depth is 12 μ m, and width is 14 μ m, and spacing is that 10 grooves of 25 μ m are as Fig. 3 (f).
(A7) method that adopts deposit or smear is placed αsource Pu in each groove
238, obtain being with fluted PIN knot as Fig. 3 (g).
Step B: PIN knot in making.
Repeating step (A1), to step (A7), obtains PIN knot.
Step C: utilize bonding method, the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, obtain parallel PIN type alpha irradiation battery as Fig. 3 (h).
Claims (7)
1. a parallel PIN type alpha irradiation battery, comprising: PIN unit and αsource, is characterized in that:
Described PIN unit adopts by the parallel connection of upper and lower two PIN knot and forms; Lower PIN knot is followed successively by from bottom to top, N-type Ohm contact electrode (5), the highly doped 4H-SiC substrate of N-type (1), the low-doped epitaxial loayer of N-type (2), the highly doped epitaxial loayer of P type (3) and P type Ohm contact electrode (4), upper PIN knot is followed successively by from bottom to top, P type Ohm contact electrode (4), the highly doped epitaxial loayer of P type (3), the low-doped epitaxial loayer of N-type (2), the highly doped 4H-SiC substrate of N-type (1) and N-type Ohm contact electrode (5);
The one side that described two PIN tie its P type Ohm contact electrode (4) contacts, and in upper and lower PIN knot, groove forms Mirror Symmetry, the integrative-structure mutually connecting;
In each PIN knot, be provided with at least two grooves (6), in each groove (6), be all placed with αsource (7), to realize making full use of high-energyα-particle.
2. battery according to claim 1, is characterized in that αsource (7) adopts the plutonium element that americium element that relative atomic mass is 241 or relative atomic mass are 238, i.e. Am
241or Pu
238.
3. battery according to claim 1, the degree of depth h that it is characterized in that groove (6) meets m+q<h<m+n+q, wherein m is the thickness of the highly doped epitaxial loayer of P type (3), n is the thickness of the low-doped epitaxial loayer of N-type (2), and q is the thickness of P type Ohm contact electrode (4).
4. battery according to claim 1 and 2, is characterized in that the width L of groove (6) meets L≤2g, and wherein, g is the average incident degree of depth of the high-energyα-particle that discharges of αsource (7) in αsource, for αsource, is Am
241, its value is: g=7.5 μ m is Pu for αsource
238, its value is: g=10 μ m.
5. battery according to claim 1, is characterized in that the spacing d of adjacent two grooves (6) meets d>=i, and wherein, i is the average incident degree of depth of the high-energyα-particle that discharges of αsource (7) in 4H-SiC, for αsource, is Am
241, its value is: i=10 μ m is Pu for αsource
238, its value is: i=18.2 μ m.
6. battery according to claim 1, is characterized in that it is lx10 that substrate (1) adopts doping content
18cm
-3n-type 4H-SiC, the highly doped epitaxial loayer of P type (3) and the low-doped epitaxial loayer of N-type (2) are 4H-SiC extension, wherein the doping content of the highly doped epitaxial loayer of P type (3) is 1x10
19～5x10
19cm
-3, the doping content of the low-doped epitaxial loayer of N-type (2) is 1x10
15～2x10
15cm
-3.
7. a preparation method for parallel PIN type alpha irradiation battery, comprises the following steps:
(1) make lower PIN knot:
1.1) clean: SiC print is cleaned, to remove surface contaminant;
1.2) the low-doped epitaxial loayer of growth N-type: utilizing the SiC print surface epitaxial growth one deck doping content of chemical vapor deposition CVD method after cleaning is 1x10
15～2x10
15cm
-3, thickness is the low-doped epitaxial loayer of the N-type of 5～10 μ m;
1.3) the highly doped epitaxial loayer of growing P-type: utilizing chemical vapor deposition CVD method is 1x10 in the low-doped epi-layer surface epitaxial growth of N-type one deck doping content
19～5x10
19cm
-3, thickness is the highly doped epitaxial loayer of P type of 1～2 μ m;
1.4) deposit Ohm contact electrode: utilize in the highly doped epi-layer surface of P type the Ni metal level that electron-beam vapor deposition method deposit a layer thickness is 300nm, as mask and the P type metal ohmic contact of etching groove; Utilize electron-beam vapor deposition method at the SiC substrate Ni metal level that back side deposition thickness of extension is not 300nm, as N-type Ohm contact electrode; Short annealing 3 minutes in nitrogen atmosphere at 1100 ℃;
1.5) litho pattern: the position according to nuclear battery groove is made into reticle; At the Ni of deposit layer on surface of metal spin coating one deck photoresist, utilize reticle to carry out electron beam exposure to photoresist, form corrosion window; Ni metal level to corrosion window place corrodes, and exposes the highly doped epitaxial loayer SiC of P type, obtains P type Ohm contact electrode and guttering corrosion window;
1.6) etching groove: utilize inductively coupled plasma ICP lithographic technique, carving the degree of depth on the highly doped SiC epitaxial loayer of the P type exposing is 6.5～12 μ m, and width is 5～14 μ m, and spacing is at least two grooves of 12～25 μ m;
1.7) place αsource: the method that adopts deposit or smear, in groove, place αsource, obtain being with fluted lower PIN knot.
(2) repeating step 1.1) to step 1.7) PIN ties in makings.
(3) utilize bonding method that the P type Ohm contact electrode of the P type Ohm contact electrode of upper PIN knot and lower PIN knot is pressed together, complete the making of parallel PIN type alpha irradiation battery.
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| CN105448374A (en) * | 2015-11-16 | 2016-03-30 | 长安大学 | Silicon carbide PIN buried-layer structure isotope battery using alpha radioactive sources and manufacturing method thereof |
| CN105448375A (en) * | 2015-11-16 | 2016-03-30 | 长安大学 | Silicon carbide PIN type isotope cell using alpha radioactive source and manufacturing method thereof |
| CN105448376A (en) * | 2015-11-16 | 2016-03-30 | 长安大学 | Silicon carbide schottky junction type isotope cell using alpha radioactive sources and manufacturing method thereof |
| CN110494929A (en) * | 2017-01-31 | 2019-11-22 | 俄罗斯国立科技大学莫斯科钢铁合金研究所 | Ionising radiation converter and its manufacturing method with cross-linked structure |
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| CN105448376A (en) * | 2015-11-16 | 2016-03-30 | 长安大学 | Silicon carbide schottky junction type isotope cell using alpha radioactive sources and manufacturing method thereof |
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| CN105448375B (en) * | 2015-11-16 | 2017-11-03 | 长安大学 | Using the carborundum PIN-type isotope battery and its manufacture method of αsource |
| CN105448376B (en) * | 2015-11-16 | 2017-11-03 | 长安大学 | Using the silicon carbide Schottky junction isotope battery and its manufacture method of αsource |
| CN110494929A (en) * | 2017-01-31 | 2019-11-22 | 俄罗斯国立科技大学莫斯科钢铁合金研究所 | Ionising radiation converter and its manufacturing method with cross-linked structure |
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