CN110459558B - Display panel and manufacturing method thereof - Google Patents
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- CN110459558B CN110459558B CN201910770677.6A CN201910770677A CN110459558B CN 110459558 B CN110459558 B CN 110459558B CN 201910770677 A CN201910770677 A CN 201910770677A CN 110459558 B CN110459558 B CN 110459558B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The embodiment of the invention discloses a display panel and a manufacturing method thereof. The display panel includes: the backlight module comprises a back plate and a plurality of first light-emitting devices, a plurality of second light-emitting devices and a plurality of third light-emitting devices which are arranged on the back plate, wherein the light-emitting colors of the first light-emitting devices, the second light-emitting devices and the third light-emitting devices are different; the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel. By the technical scheme of the invention, under the condition that the size of the light-emitting device of the display panel is extremely small, the colorized display of the display panel is realized with lower process difficulty, fewer process steps and higher manufacturing yield.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel and a manufacturing method thereof.
Background
The silicon-based micro-display technology is to combine a display and a monocrystalline silicon integrated circuit, and a display panel using the silicon-based micro-display technology has the advantages of high display resolution, large visual angle, high response speed, high brightness, low power consumption and the like, so that the silicon-based micro-display technology has wide application prospects in the aspects of increasing the image display size and definition, reducing the number of system chips to reduce the cost of a system and the space volume of a product, and can be applied to various fields of military affairs, medicine, aerospace, electronic consumption and the like.
However, the existing method for realizing colorization of silicon-based micro display panels has the problems of high difficulty and low yield, so that the mass production is difficult to realize.
Disclosure of Invention
The embodiment of the invention provides a display panel and a manufacturing method thereof, which aim to reduce the manufacturing difficulty of colorization of the display panel and improve the yield of the display panel.
In order to achieve the technical purpose, the embodiment of the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a display panel, including:
the backlight module comprises a back plate and a plurality of first light-emitting devices, a plurality of second light-emitting devices and a plurality of third light-emitting devices which are arranged on the back plate, wherein the light-emitting colors of the first light-emitting devices, the second light-emitting devices and the third light-emitting devices are different;
the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel.
Further, the first light emitting device is a blue light emitting device, the second light emitting device is a green light emitting device, and the third light emitting device is a red light emitting device;
alternatively, the first light emitting device is a green light emitting device, the second light emitting device is a blue light emitting device, and the third light emitting device is a red light emitting device.
Colorization of the display panel is achieved.
Further, the first light emitting device, the second light emitting device, and the third light emitting device include a cathode, an epitaxial layer, and an anode that are stacked.
The light emitting device adopts a vertical structure, so that the number of electrodes on a unit area of the display panel is greatly reduced, the size of the light emitting device can be further reduced, and high PPI is realized.
Further, the anode of the first light emitting device, the anode of the second light emitting device and the anode of the third light emitting device are all located on one side of the light emitting function layer adjacent to the backplane, the backplane comprises a plurality of pixel driving circuits, and the anode of the first light emitting device, the anode of the second light emitting device and the anode of the third light emitting device are electrically connected with the corresponding pixel driving circuits;
the first, second, and third light emitting devices share a cathode.
The cathode layer is set to be in a common layer structure, and the cathode layer can be directly deposited on one side, away from the back plate, of the N-type semiconductor layer, so that the manufacturing process of the cathode is simplified, the manufacturing cost is reduced, and the yield of the display panel is improved.
Further, the backplane comprises a plurality of pixel driving circuits, and the pixel driving circuits are digital driving circuits.
The problems that an analog signal is easily interfered and the gray scale value adjusting precision is low in the adoption of an analog driving circuit are solved, the occupied area of a pixel driving circuit is favorably reduced, and particularly the resolution of a display panel is favorably improved for a silicon-based micro display panel.
Furthermore, the cathode of the second light emitting device is located on one side, away from the back plate, of the epitaxial layer of the second light emitting device, and corresponds to the area where the second light emitting device is located, the epitaxial layer of the first light emitting device is arranged between the cathode of the second light emitting device and the epitaxial layer of the second light emitting device, and the N-type semiconductor layer in the epitaxial layer of the second light emitting device is electrically connected with the cathode of the second light emitting device through a via hole penetrating through the epitaxial layer of the first light emitting device.
The epitaxial layer of the first light-emitting device is short-circuited by the cathode layer, and the epitaxial layer of the area where the first light-emitting device corresponds to the second light-emitting device does not emit light in the normal display process of the display panel, so that the light-emitting color and the light-emitting brightness of the second light-emitting device are not influenced.
Furthermore, the cathode of the third light emitting device is located on one side, away from the back plate, of the epitaxial layer of the third light emitting device, and corresponds to the region where the third light emitting device is located, an auxiliary bonding layer is arranged between the cathode of the third light emitting device and the epitaxial layer of the third light emitting device, and the N-type semiconductor layer in the epitaxial layer of the third light emitting device is electrically connected with the cathode of the third light emitting device through a via hole penetrating through the auxiliary bonding layer.
It is advantageous to bond the third light emitting device to the first substrate.
Further, the display panel further includes: the cover plate is positioned on one side, away from the back plate, of the first light-emitting device, the second light-emitting device and the third light-emitting device, and comprises a plurality of protruding structures, and the protruding structures protrude towards the direction, away from the back plate, of the cover plate.
The light emitting diode is beneficial to avoiding that the light emitted by the first light emitting device, the second light emitting device and the third light emitting device is totally reflected and cannot be emitted when the angle of the light is larger, so that the phenomenon of total reflection of the light can be avoided by adopting the convex structure, and the light emitting rate is increased; moreover, the convex structures can adjust the angle of light emission relatively large, so that the color cast of the visual angle can be reduced, and a user can watch the display panel from multiple angles without influencing the display effect.
In a second aspect, an embodiment of the present invention further provides a manufacturing method of a display panel, where the manufacturing method includes:
providing a first substrate, and epitaxially growing the first light-emitting device and the second light-emitting device on the first substrate;
providing a second substrate, and epitaxially growing the third light-emitting device on the second substrate;
bonding the third light emitting device to the first substrate;
removing the second substrate and bonding the first, second and third light emitting devices to the backplane; wherein the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel.
Further, after bonding the first light emitting device, the second light emitting device, and the third light emitting device on the back sheet, the method further includes:
removing the first substrate;
arranging a cover plate on one side of the first light-emitting device, the second light-emitting device and the third light-emitting device far away from the back plate; the cover plate comprises a plurality of protruding structures, and the protruding structures protrude towards the direction of the cover plate far away from the back plate.
The embodiment of the invention provides a display panel and a manufacturing method thereof, wherein the display panel comprises a back plate, a plurality of first light-emitting devices, a plurality of second light-emitting devices and a plurality of third light-emitting devices, the first light-emitting devices, the second light-emitting devices and the third light-emitting devices are arranged on the back plate, and the second light-emitting devices and the first light-emitting devices are overlapped along the direction vertical to the display panel.
Drawings
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
fig. 4 is a schematic flowchart illustrating a manufacturing method of a display panel according to an embodiment of the present invention;
FIGS. 5 to 11 are schematic cross-sectional views corresponding to the steps in FIG. 4;
fig. 12 is a schematic flowchart of another method for manufacturing a display panel according to an embodiment of the invention;
fig. 13 is a schematic cross-sectional view corresponding to S260 in fig. 12.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention. Referring to fig. 1, the display panel includes a back plate 10 and a plurality of first light emitting devices 1, a plurality of second light emitting devices 2, and a plurality of third light emitting devices 3 on the back plate 10, and the first light emitting devices 1, the second light emitting devices 2, and the third light emitting devices 3 emit light of different colors. And the second light emitting device 2 and the first light emitting device 1 overlap in a direction perpendicular to the display panel.
Illustratively, the first light emitting device 1 may be provided as a blue light emitting device, the second light emitting device 2 may be provided as a green light emitting device, and the third light emitting device 3 may be provided as a red light emitting device. Specifically, the first light emitting device 1, that is, the blue light emitting device, may be epitaxially grown on the first substrate, and the second light emitting device 2, that is, the green light emitting device, may be epitaxially grown on the side of the first light emitting device 1 away from the first substrate. The epitaxial growth of the first light-emitting device 1 on the first substrate means that an N-type semiconductor layer (N-GaN), a light-emitting function layer (InGaN blue light multiple quantum well layer) and a P-type semiconductor layer (P-GaN) are epitaxially grown on the first substrate; the buffer layer may be epitaxially grown on the first substrate, and the buffer layer may be formed of, for example, AlN (aluminum nitride) or GaN (gallium nitride), and the N-type semiconductor layer (N-GaN), the light emitting functional layer (InGaN blue light multiple quantum well layer), and the P-type semiconductor layer (P-GaN) may be further epitaxially grown. The epitaxial growth of the second light emitting device 2 on the first light emitting device 1 means that an N-type semiconductor layer (N-GaN), a light emitting function layer (InGaN green light multiple quantum well layer), and a P-type semiconductor layer (P-GaN) are epitaxially grown on the P-type semiconductor layer.
The second light emitting device 2 overlaps the first light emitting device 1 in a direction perpendicular to the first substrate, which means that the epitaxial layer 11 including the N-type semiconductor layer, the light emitting function layer, and the P-type semiconductor layer in the first light emitting device 1 overlaps the epitaxial layer 21 including the N-type semiconductor layer, the light emitting function layer, and the P-type semiconductor layer in the second light emitting device 2. The first light emitting device 1 and the second light emitting device 2 are subjected to a one-time etching process, and the N-type semiconductor layer, the light emitting function layer and the P-type semiconductor layer are etched, so that the epitaxial layer 11 of the first light emitting device 1 and the epitaxial layer 21 of the second light emitting device 2 can be formed, and the epitaxial layer 11 of the first light emitting device 1 and the epitaxial layer 21 of the second light emitting device 2 are overlapped, for example, in the area where the second light emitting device 2 is located, the epitaxial layer 11 of the first light emitting device 1 and the epitaxial layer 21 of the second light emitting device 2 are overlapped. A third light emitting device 3, namely a red light emitting device, is epitaxially grown on the second substrate, and the third light emitting device 3 is bonded on the first substrate on which the first light emitting device 1 and the second light emitting device 2 are epitaxially grown by using a wafer bonding technique.
At present, when the silicon-based Micro display panel is manufactured, if the silicon-based Micro display panel comprises light emitting devices of three colors, the light emitting devices of the same color need to be transferred in batch at one time, and colorization of the display panel can be realized only by adopting three substrate stripping and bonding technologies, but the light emitting devices are damaged in the processes of substrate stripping of the light emitting devices and welding of the light emitting devices and a back plate, so that the manufacturing yield of the display panel is greatly reduced. In addition, the size of the light-emitting device is extremely small for the silicon-based micro display panel, so that the difficulty of realizing the flip-chip welding technology with high alignment precision of the light-emitting device is extremely high, namely the alignment difficulty of the light-emitting device is extremely high, and the manufacturing yield of the display panel is further reduced.
The embodiment of the invention has the following beneficial effects that the display panel comprises the back plate 10, and the plurality of first light-emitting devices 1, the plurality of second light-emitting devices 2 and the plurality of third light-emitting devices 3 which are positioned on the back plate 10, and the second light-emitting devices 2 and the first light-emitting devices 1 are overlapped along the direction vertical to the first substrate:
on the first hand, the embodiment of the invention can realize the formation of the light-emitting devices of three colors on the same substrate by only one wafer bonding technology without adopting a batch transfer technology with great technical difficulty and respectively adopting three substrate stripping and bonding technologies. Therefore, the embodiment of the invention reduces the probability of damaging the light-emitting device by the substrate stripping process and the bonding process, and improves the manufacturing yield of the display panel.
In the second aspect, compared with bonding alignment using three pairs of extremely small-sized light emitting devices, in the embodiment of the present invention, wafer bonding is only performed when the third light emitting device 3 is transferred, and process steps such as electrode manufacturing can be performed after the third light emitting device 3 is bonded to the first substrate.
In the third aspect, by arranging the second light emitting device 2 to overlap with the first light emitting device 1 in the direction perpendicular to the first substrate, a full-wafer patterning process may be performed on the first light emitting device 1 and the second light emitting device 2 on the first substrate after the first light emitting device 1 and the second light emitting device 2 are grown, which is advantageous to reduce process steps.
In a fourth aspect, the manufacturing process of the display panel in the embodiment of the invention can be completed based on the existing relatively mature processing technology, so that technical support and equipment guarantee of a semiconductor process can be obtained, thereby being beneficial to improving yield and reducing manufacturing cost of the display panel.
In the fifth aspect, the conventional technology for realizing the colorized display of the display panel is a quantum dot color conversion technology, that is, quantum dots with different colors are doped in a film layer, so as to realize the colorized display, but for a high-resolution display panel, such as a silicon-based micro display panel, the size of a light emitting device is extremely small, and the colorized display is difficult to realize by using the conventional quantum dot color conversion technology. According to the embodiment of the invention, the first light emitting device 1 and the second light emitting device 2 can be epitaxially grown on the first substrate, and the third light emitting device 3 can be epitaxially grown on the second substrate, so that the multiple quantum well layers with different colors can be utilized to enable different light emitting devices to emit light rays with different colors, and further, the colorized display of a display panel, such as a silicon-based micro display panel, can be realized.
In summary, the embodiments of the present invention can realize the color display of the display panel with low process difficulty, fewer process steps and high manufacturing yield under the condition that the size of the light emitting device of the display panel is very small.
Fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 2, on the basis of the above-described embodiment, the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3 optionally include a cathode, an epitaxial layer, and an anode that are stacked.
Specifically, referring to fig. 1 and 2, the epitaxial layer 11 of the first light emitting device 1 includes a P-type semiconductor layer 111, a light emitting function layer 112, and an N-type semiconductor layer 113, the epitaxial layer 21 of the second light emitting device 2 includes a P-type semiconductor layer 211, a light emitting function layer 212, and an N-type semiconductor layer 213, and the epitaxial layer 31 of the third light emitting device 3 includes a P-type semiconductor layer 311, a light emitting function layer 312, and an N-type semiconductor layer 313. The cathode 15 and the anode 12 of the first light emitting device 1 are respectively located at both sides of the light emitting function layer 112, that is, the first light emitting device 1 is in a vertical structure, the cathode 25 and the anode 22 of the second light emitting device 2 are respectively located at both sides of the light emitting function layer 212, that is, the second light emitting device 2 is in a vertical structure, and the cathode 35 and the anode 32 of the third light emitting device 3 are respectively located at both sides of the light emitting function layer 312, that is, the third light emitting device 3 is in a vertical structure. Compared with the cathode and the anode which are arranged at the same side of the light-emitting function layer, the short circuit of the cathode and the anode of each light-emitting device is avoided, the size of the light-emitting device can be further reduced, and high PPI is realized.
With continued reference to fig. 2, on the basis of the above embodiment, optionally, the backplane 10 includes a plurality of pixel driving circuits 4, and the pixel driving circuits 4 are digital driving circuits. The digital driving circuit drives the light-emitting device to emit light by adopting a digital signal, adjusts the light-emitting brightness of the light-emitting device by controlling the light-emitting time of the light-emitting device, avoids the problems that an analog signal existing in an analog driving circuit is easy to interfere and the adjustment precision of a gray scale value is low, does not comprise a capacitor structure, is favorable for reducing the occupied area of a pixel driving circuit, is especially favorable for improving the resolution of a display panel for a silicon-based micro display panel, and can adopt an SRAM (Static Random Access Memory) circuit for example to realize the active driving of the display panel.
With continued reference to fig. 2, on the basis of the foregoing embodiment, optionally, the cathode 25 of the second light emitting device 2 is located on a side of the epitaxial layer 21 of the second light emitting device 2 away from the back plate 10, and the epitaxial layer 11 of the first light emitting device 1 is disposed between the cathode 25 of the second light emitting device 2 and the epitaxial layer 21 of the second light emitting device 2 corresponding to the area where the second light emitting device 2 is located; the N-type semiconductor layer 213 in the epitaxial layer 21 of the second light emitting device 2 is electrically connected to the cathode 25 of the second light emitting device 2 through a via hole penetrating the epitaxial layer 11 of the first light emitting device 1.
The reason why the epitaxial layer 11 of the first light emitting device 1 is disposed between the cathode 25 of the second light emitting device 2 and the N-type semiconductor layer 213 of the second light emitting device 2 in the embodiment of the present invention is that the first light emitting device 1 is epitaxially grown on the first substrate, the second light emitting device 2 is further epitaxially grown on the side of the first light emitting device 1 away from the first substrate, and the second light emitting device 2 overlaps the first light emitting device 1 in the direction perpendicular to the first substrate, and then the first etching process is performed on the first light emitting device 1 and the second light emitting device 2 to reduce the process steps. Then the epitaxial layer 11 of the first light emitting device 1 and the epitaxial layer 21 of the second light emitting device 2 are formed, and since the epitaxial layer 11 of the first light emitting device 1 is located between the epitaxial layer 21 of the second light emitting device 2 and the first substrate, the epitaxial layer 11 of the first light emitting device 1 is not etched away, resulting in a case where the epitaxial layer 11 of the first light emitting device 1 and the epitaxial layer 21 of the second light emitting device 2 overlap.
The N-type semiconductor layer 213 of the second light emitting device 2 is electrically connected to the cathode 25 through the via hole penetrating the epitaxial layer 11 of the first light emitting device 1, that is, the cathode 25 penetrates the epitaxial layer 11 of the first light emitting device 1, so that the N-type semiconductor layer and the P-type semiconductor layer in the epitaxial layer 11 of the first light emitting device 1 are short-circuited by the cathode 25, and the epitaxial layer 11 of the area where the first light emitting device 1 corresponding to the second light emitting device 2 is located does not emit light during normal display of the display panel, so that the light emitting color and the light emitting brightness of the second light emitting device 2 are not affected.
With continued reference to fig. 2, on the basis of the foregoing embodiment, optionally, the cathode 5 of the third light emitting device 3 is located on a side of the epitaxial layer 31 of the third light emitting device 3 away from the rear plate 10, and an auxiliary bonding layer 6 is disposed between the cathode 35 of the third light emitting device 3 and the epitaxial layer 31 of the third light emitting device 3 corresponding to the area where the third light emitting device 3 is located; the N-type semiconductor layer 313 in the epitaxial layer 31 of the third light emitting device 3 is electrically connected to the cathode 35 of the third light emitting device 3 through a via hole penetrating the auxiliary bonding layer 6.
Exemplarily, the auxiliary bonding layer 6 may be a bonding dielectric, such as barium titanate, and the auxiliary bonding layer 6 facilitates bonding the third light emitting device 3 to the first substrate by using a wafer bonding technique. The N-type semiconductor layer 313 in the epitaxial layer 31 of the third light emitting device 3 receives a cathode signal through the cathode 35 of the third light emitting device 3, and the pixel driving circuit 4 provides an anode signal to the third light emitting device 3, which is beneficial to realizing active driving of the third light emitting device 3.
With reference to fig. 1 and fig. 2, on the basis of the above-described embodiments, optionally, the anode 12 of the first light emitting device 1, the anode 22 of the second light emitting device 2, and the anode 32 of the third light emitting device 3 are all located on the side of the light emitting functional layer adjacent to the back sheet 10. The back sheet 10 includes a plurality of pixel driving circuits 4, and the anodes of the first light emitting devices 1, the anodes of the second light emitting devices 2, and the anodes of the third light emitting devices 3 are electrically connected to the corresponding pixel driving circuits 4. The first, second and third light emitting devices 1, 2 and 3 share a cathode 5.
Specifically, referring to fig. 1 and 2, the anode 12 of the first light emitting device 1 is located on the side of the light emitting function layer 112 adjacent to the backsheet 10, the anode 22 of the second light emitting device 2 is located on the side of the light emitting function layer 212 adjacent to the backsheet 10, and the anode 32 of the third light emitting device 3 is located on the side of the light emitting function layer 312 adjacent to the backsheet 10. The anode 12 of the first light emitting device 1, the anode 22 of the second light emitting device 2, and the anode 32 of the third light emitting device 3 are electrically connected to the corresponding pixel driving circuits 4, respectively. The pixel driving circuit 4 provides an anode signal to the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3, which is beneficial to realizing active driving of the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3.
The N-type semiconductor layer 113 of the first light emitting device 1, the N-type semiconductor layer 213 of the second light emitting device 2, and the N-type semiconductor layer 313 of the third light emitting device 3 share the cathode 5, and the N-type semiconductor layers of the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3 receive a common cathode signal through the common cathode 5. In the embodiment of the invention, the common cathode 5 is set to be in the common layer structure and is positioned on the side of the N-type semiconductor layer far away from the backboard 10, so that the common cathode 5 can be directly deposited on the side of the N-type semiconductor layer far away from the backboard 10, the manufacturing process of the common cathode is simplified, and the manufacturing cost is favorably reduced. Therefore, the embodiment of the invention realizes the active drive of the light-emitting device on the basis of ensuring low manufacturing cost and high yield.
It should be noted that, in the above embodiments, the first light emitting device 1 is exemplarily shown as a blue light emitting device, the second light emitting device 2 is a green light emitting device, and the third light emitting device 3 is a red light emitting device, which is not a limitation of the present invention. In other embodiments, the first light emitting device 1 may be a green light emitting device, the second light emitting device 2 may be a blue light emitting device, and the third light emitting device 3 may be a red light emitting device, or other cases, which may be set as required in practical applications. Specifically, the light emitting devices that can be grown on the same substrate are lattice-matched light emitting devices, and the light emitting devices that are mismatched with the substrate are formed on the substrate by a wafer bonding process. As the blue light emitting device and the green light emitting device provided by the embodiment of the present invention may be epitaxially grown on a silicon-based substrate or a sapphire substrate in a crystal orientation (111), and for the red light emitting device, epitaxial growth is required on a gallium arsenide (GaAs) substrate, and therefore, the blue light emitting device and the green light emitting device are selected to be epitaxially grown on the first substrate, and the red light emitting device is formed on the first substrate by using a wafer bonding process.
Fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention. Referring to fig. 3, on the basis of the above embodiment, optionally, the display panel further includes a cover plate 7. The cover plate 7 is positioned on one side of the first light emitting device 1, the second light emitting device 2 and the third light emitting device 3 away from the back plate 10; the cover plate 7 includes a plurality of protruding structures 71, and the protruding structures 71 protrude away from the back plate 10. The cover plate 7 may be a lens cover plate, and the convex structures 71 are convex lenses. In the embodiment of the invention, the cover plate 7 comprises the convex structure 71, which is beneficial to avoiding that the light rays emitted by the first light-emitting device 1, the second light-emitting device 2 and the third light-emitting device 3 are totally reflected and cannot be emitted when the angles of the light rays are larger, so that the convex structure 71 is adopted, the phenomenon of total reflection of the light rays can be avoided, and the light-emitting rate is increased; moreover, the convex structures 71 can adjust the angle of light emission to be larger, so that the color cast of the viewing angle can be reduced, and a user can watch the display panel from multiple angles without influencing the display effect.
Fig. 4 is a schematic flow chart of a manufacturing method of a display panel according to an embodiment of the present invention, the manufacturing method is used for manufacturing the display panel according to the above embodiment, and as shown in fig. 4, the manufacturing method of the display panel includes:
s110, providing a first substrate, and epitaxially growing a first light-emitting device and a second light-emitting device on the first substrate; wherein the second light emitting device and the first light emitting device overlap in a direction perpendicular to the first substrate.
With reference to fig. 1-3 and 5, a first substrate 20 is provided, and the first substrate 20 may be a silicon-based substrate with a silicon-based crystal orientation (111), or may be a sapphire substrate. Illustratively, epitaxially growing the first light emitting device 1 and the second light emitting device 2 on the first substrate 20 includes epitaxially growing the first light emitting device 1 on the first substrate 20 using a metal organic compound chemical vapor deposition (MOCVD) process in which a mask may be used to reserve a bonding position of the third light emitting device 1; the same mask is used to epitaxially grow the second light emitting device 2 on the first light emitting device 1.
Specifically, the epitaxially grown first light emitting device 1 may be formed by epitaxially growing a buffer layer (AlN or GaN), an N-type semiconductor layer (N-GaN), a light emitting functional layer (InGaN blue multiple quantum well layer), and a P-type semiconductor layer (P-GaN) on the first substrate 20 in this order. The epitaxial growth of the second light emitting device 2 may specifically be an epitaxial growth of an N-type semiconductor layer (N-GaN), a light emitting function layer (InGaN green light multiple quantum well layer), and a P-type semiconductor layer (P-GaN) on the first light emitting device 1 in this order. The buffer layer may improve lattice mismatch of the N-type semiconductor layer with the first substrate 20 while the N-type semiconductor layer of the second light emitting device 2 is lattice-matched with the P-type semiconductor layer of the first light emitting device 1, and thus, it is not necessary to provide a buffer layer between the N-type semiconductor layer of the second light emitting device 2 and the P-type semiconductor layer of the first light emitting device 1.
And S120, providing a second substrate, and epitaxially growing a third light-emitting device on the second substrate.
In conjunction with fig. 1-3, 6, a second substrate 30 is provided, the second substrate 30 may be gallium arsenide (GaAs). Illustratively, the third light emitting device 3 is epitaxially grown on the second substrate 30 using a metal organic compound chemical vapor deposition (MOCVD) process in which a mask may be used to reserve the positions of the first and second light emitting devices 1 and 2. It is also possible to deposit the third light emitting device 3 on the second substrate 30 over the entire surface and then reserve the positions of the first light emitting device 1 and the second light emitting device 2 by using the photolithography and etching process. The epitaxially grown third light emitting device 3 may specifically be one in which a buffer layer (GaLi), an N-type semiconductor layer (N-GaLi), a light emitting function layer (red light multiple quantum well layer), and a P-type semiconductor layer (P-GaLi) are epitaxially grown in this order on the second substrate 30.
And S130, bonding a third light-emitting device on the first substrate.
With reference to fig. 1 to 3 and 7, the third light-emitting device 3 is bonded to the first substrate 20. Illustratively, the second substrate 30, on which the third light emitting device 3 is epitaxially grown, is bonded to the first substrate 20 using a Wafer Bonding (Wafer Bonding) process. Alternatively, the auxiliary bonding layer 6 may be used to stably bond the third light emitting device 3 to the first substrate 20. Alternatively, the auxiliary bonding layer 6 may be, for example, a bonding dielectric such as barium titanate or the like. A wet etch process is then used to remove the second substrate 30.
With reference to fig. 1 to 3, 7 and 8, a photoresist is coated on the sides of the second light emitting device 2 and the third light emitting device 3 away from the first substrate 20; patterning the photoresist by adopting a photoetching process; the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3 are patterned using a dry etching process or a wet etching process.
Specifically, the first light emitting device 1 includes a portion of the film layer 14 corresponding to the region of the second light emitting device 2 and a portion of the film layer 15 corresponding to the region of the first light emitting device 1, the film layer 14 and the film layer 15 are etched therebetween, and the etching is stopped at the first substrate 20 to electrically disconnect the first light emitting device 1 and the second light emitting device 2. In the embodiment of the present invention, the third light emitting device 3 is bonded to the first substrate and then etched, so that the first substrate 20 and the second substrate 30 can be bonded by using a wafer bonding process with a low alignment requirement, which makes the process requirement of the embodiment of the present invention low and easy to implement.
Referring to fig. 1 to 3 and 9, anodes are deposited on the first, second and third light emitting devices 1, 2 and 3 to form an anode 12 of the first light emitting device 1, an anode 22 of the second light emitting device 2 and an anode 32 of the third light emitting device 3. Specifically, the process for depositing the anode may be physical vapor deposition, thermal evaporation, magnetron sputtering, or the like. The material of the anode may be, for example, a metal material such as chromium, platinum, or the like.
Optionally, an insulating layer may also be fabricated prior to anode deposition. Referring to fig. 10, exemplarily, the insulating layer 8 is deposited on the first, second, and third light emitting devices 1, 2, and 3, and the process of depositing the insulating layer 8 may be MOCVD, for example. The material of the insulating layer 8 may be, for example, silicon dioxide. The provision of the insulating layer 8 may function to protect the light emitting device from water and oxygen, and contribute to reduction of leakage current of the light emitting device.
S140, providing a back plate; the backboard comprises a plurality of pixel driving circuits.
With reference to fig. 1-3 and 11, a backplane 10 is provided, where the backplane 10 includes a plurality of pixel driving circuits 4. The pixel driving circuit 4 may be a non-capacitive digital driving circuit, such as an SRAM driving circuit, and the pixel driving circuit 4 may be implemented in a limited space of the silicon-based backplane.
S150, removing the second substrate, and bonding the first light-emitting device, the second light-emitting device and the third light-emitting device on the back plate; wherein the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel.
Referring to fig. 1 to 3 and 11, a first light emitting device 1, a second light emitting device 2, and a third light emitting device 3 formed on a first substrate 20 are bonded on a back sheet 10. Anodes of the first light emitting device 1, the second light emitting device 2 and the third light emitting device 3 are all located on one side of the light emitting function layer adjacent to the back plate 10, and the anodes are electrically connected with the corresponding pixel driving circuits 4. Illustratively, the bonding process employs a flip-chip bonding process to bond the anodes of the first, second, and third light emitting devices 1, 2, and 3 and the corresponding pixel driving circuits 4 in a para-position. The first substrate 20 is then removed. If the first substrate 20 is a sapphire substrate, the sapphire substrate may be removed using laser lift-off. If the first substrate 20 is a silicon-based substrate, wet etching may be used to remove the silicon-based substrate. Optionally, the underfill 9 may also be filled and cured before the first substrate 20 is removed to enhance the strength of the bonding.
The manufacturing process technology adopted in the embodiment of the invention can be completed based on the existing mature processing technology, so that the technical support and equipment guarantee of the semiconductor process can be obtained, thereby being beneficial to improving the yield and reducing the cost.
Fig. 12 is a schematic flow chart of another manufacturing method of a display panel according to an embodiment of the present invention, and referring to fig. 12, on the basis of the foregoing embodiment, optionally, the manufacturing method of the display panel includes:
s210, providing a first substrate, and epitaxially growing a first light-emitting device and a second light-emitting device on the first substrate.
And S220, providing a second substrate, and epitaxially growing a third light-emitting device on the second substrate.
And S230, bonding a third light-emitting device on the first substrate.
S240, providing a backboard, wherein the backboard comprises a plurality of pixel driving circuits.
S250, removing the second substrate, and bonding the first light-emitting device, the second light-emitting device and the third light-emitting device on the backboard; wherein the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel.
And S260, removing the first substrate.
Referring to fig. 13, the first substrate 20 is removed.
S270, arranging the cover plate on one sides, far away from the back plate, of the first light-emitting device, the second light-emitting device and the third light-emitting device; the cover plate comprises a plurality of protruding structures, and the protruding structures protrude towards the direction of the cover plate far away from the back plate.
Referring to fig. 3, the cover plate 7 is disposed on the sides of the first light emitting device 1, the second light emitting device 2, and the third light emitting device 3 away from the back plate 10; the cover plate 7 includes a plurality of protruding structures 71, and the protruding structures 71 protrude away from the back plate 10. The cover plate 7 may be a lens cover plate, and the convex structures 71 are convex lenses.
In the embodiment of the invention, the cover plate 7 comprises the convex structure 71, which is beneficial to avoiding that the light rays emitted by the first light-emitting device 1, the second light-emitting device 2 and the third light-emitting device 3 are totally reflected and cannot be emitted when the angles of the light rays are larger, so that the convex structure 71 is adopted, the phenomenon of total reflection of the light rays can be avoided, and the light-emitting rate is increased; moreover, the convex structures 71 can adjust the angle of light emission to be larger, so that the color cast of the viewing angle can be reduced, and a user can watch the display panel from multiple angles without influencing the display effect.
On the basis of the above embodiments, optionally, in conjunction with fig. 1 to 3, a common cathode 5 is formed on the side of the N-type semiconductor layers of the first light emitting device 1, the second light emitting device 2 and the third light emitting device 3 away from the back plate, and the N-type semiconductor layers are all connected to the common cathode 5.
Illustratively, via holes are etched on the first light emitting device 1, the second light emitting device 2 and the third light emitting device 3, the etching is stopped to an N-type semiconductor layer, and then the common cathode 5 is deposited on the whole surface of the N-type semiconductor layer on the side far away from the substrate 10, and the material of the common cathode 5 may be metal.
Compared with the cathode and the anode which are arranged on the same side of the light-emitting function layer, the light-emitting device in the embodiment of the invention is in a vertical structure, so that the short circuit of the electrodes of the cathode and the anode can be avoided, the size of the light-emitting device can be further reduced, and the high PPI can be realized. In addition, the common cathode 5 is arranged to be in the common layer structure and is located on the side, away from the backboard 10, of the N-type semiconductor layer, so that the common cathode 5 can be directly deposited on the side, away from the backboard 10, of the N-type semiconductor layer, the manufacturing process of the cathode is simplified, and the manufacturing cost is reduced.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (8)
1. A display panel, comprising:
the backlight module comprises a back plate and a plurality of first light-emitting devices, a plurality of second light-emitting devices and a plurality of third light-emitting devices which are arranged on the back plate, wherein the light-emitting colors of the first light-emitting devices, the second light-emitting devices and the third light-emitting devices are different;
the first light emitting device, the second light emitting device and the third light emitting device are on the same substrate;
the first light emitting device, the second light emitting device and the third light emitting device comprise a cathode, an epitaxial layer and an anode which are arranged in a stacked manner;
along the direction vertical to the display panel, the second light-emitting device is located in the area, and the epitaxial layer of the first light-emitting device is overlapped with the epitaxial layer of the second light-emitting device;
the cathode of the second light-emitting device is located on one side, far away from the back plate, of the epitaxial layer of the second light-emitting device and corresponds to the area where the second light-emitting device is located, the epitaxial layer of the first light-emitting device is arranged between the cathode of the second light-emitting device and the epitaxial layer of the second light-emitting device, and the N-type semiconductor layer in the epitaxial layer of the second light-emitting device is electrically connected with the cathode of the second light-emitting device through a through hole penetrating through the epitaxial layer of the first light-emitting device.
2. The display panel according to claim 1, wherein the first light-emitting device is a blue light-emitting device, the second light-emitting device is a green light-emitting device, and the third light-emitting device is a red light-emitting device;
alternatively, the first light emitting device is a green light emitting device, the second light emitting device is a blue light emitting device, and the third light emitting device is a red light emitting device.
3. The display panel according to claim 1, wherein the anode of the first light emitting device, the anode of the second light emitting device, and the anode of the third light emitting device are located on a side of the light emitting functional layer of the epitaxial layer adjacent to the backplane, the backplane comprising a plurality of pixel driving circuits, the anode of the first light emitting device, the anode of the second light emitting device, and the anode of the third light emitting device being electrically connected to the corresponding pixel driving circuits;
the first, second, and third light emitting devices share a cathode.
4. The display panel according to any one of claims 1 to 3, wherein the backplane comprises a plurality of pixel driving circuits, the pixel driving circuits being digital driving circuits.
5. The display panel according to claim 1, wherein the cathode of the third light emitting device is located on a side of the epitaxial layer of the third light emitting device away from the backplane, and an auxiliary bonding layer is disposed between the cathode of the third light emitting device and the epitaxial layer of the third light emitting device corresponding to a region where the third light emitting device is located, and the N-type semiconductor layer in the epitaxial layer of the third light emitting device is electrically connected to the cathode of the third light emitting device through a via hole penetrating through the auxiliary bonding layer.
6. The display panel according to any one of claims 1 to 3 and 5, further comprising:
the cover plate is positioned on one side, away from the back plate, of the first light-emitting device, the second light-emitting device and the third light-emitting device, and comprises a plurality of protruding structures, and the protruding structures protrude towards the direction, away from the back plate, of the cover plate.
7. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a first substrate, and epitaxially growing a first light-emitting device and a second light-emitting device on the first substrate;
providing a second substrate, and epitaxially growing a third light-emitting device on the second substrate;
bonding the third light emitting device to the first substrate;
providing a back plate; wherein the backplane comprises a plurality of pixel drive circuits;
removing the second substrate and bonding the first, second and third light emitting devices to the backplane; wherein the second light emitting device and the first light emitting device overlap in a direction perpendicular to the display panel;
the cathode of the second light-emitting device is located on one side, far away from the back plate, of the epitaxial layer of the second light-emitting device and corresponds to the area where the second light-emitting device is located, the epitaxial layer of the first light-emitting device is arranged between the cathode of the second light-emitting device and the epitaxial layer of the second light-emitting device, and the N-type semiconductor layer in the epitaxial layer of the second light-emitting device is electrically connected with the cathode of the second light-emitting device through a through hole penetrating through the epitaxial layer of the first light-emitting device.
8. The method for manufacturing a display panel according to claim 7, further comprising, after the bonding the first light-emitting device, the second light-emitting device, and the third light-emitting device to the rear plate:
removing the first substrate;
arranging a cover plate on one side of the first light-emitting device, the second light-emitting device and the third light-emitting device far away from the back plate; the cover plate comprises a plurality of protruding structures, and the protruding structures protrude towards the direction of the cover plate far away from the back plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910770677.6A CN110459558B (en) | 2019-08-20 | 2019-08-20 | Display panel and manufacturing method thereof |
| PCT/CN2020/086009 WO2021031595A1 (en) | 2019-08-20 | 2020-04-22 | Display panel and manufacturing method thereof |
| KR1020227001266A KR20220020375A (en) | 2019-08-20 | 2020-04-22 | Display panel and manufacturing method thereof |
| TW109114067A TWI726699B (en) | 2019-08-20 | 2020-04-27 | Display panel and manufacturing method thereof |
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| CN201910770677.6A CN110459558B (en) | 2019-08-20 | 2019-08-20 | Display panel and manufacturing method thereof |
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| CN110459558A CN110459558A (en) | 2019-11-15 |
| CN110459558B true CN110459558B (en) | 2021-01-15 |
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| KR (1) | KR20220020375A (en) |
| CN (1) | CN110459558B (en) |
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| CN110459558B (en) * | 2019-08-20 | 2021-01-15 | 成都辰显光电有限公司 | Display panel and manufacturing method thereof |
| CN111129098A (en) * | 2019-12-30 | 2020-05-08 | 武汉天马微电子有限公司 | Organic light-emitting display panel and device |
| CN113745259B (en) * | 2020-05-29 | 2024-02-27 | 成都辰显光电有限公司 | Light-emitting diode display panel and preparation method thereof |
| CN112968135A (en) * | 2021-02-01 | 2021-06-15 | 京东方科技集团股份有限公司 | Display substrate and related device |
| CN114038869B (en) * | 2021-05-14 | 2023-01-13 | 重庆康佳光电技术研究院有限公司 | Display panel, display back panel and manufacturing method thereof |
| CN114725151B (en) * | 2022-03-24 | 2023-09-08 | 湖南大学 | Pixel unit, display device and preparation method thereof |
| CN114725080B (en) * | 2022-03-24 | 2023-10-13 | 湖南大学 | Light emitting unit, display device and preparation method thereof |
| CN114899291B (en) * | 2022-07-12 | 2022-10-25 | 诺视科技(苏州)有限公司 | Pixel unit for semiconductor device, manufacturing method thereof and micro display screen |
| CN115863497B (en) * | 2023-02-20 | 2023-05-23 | 镭昱光电科技(苏州)有限公司 | Micro LED display device and preparation method thereof |
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| US7030554B2 (en) * | 2004-02-06 | 2006-04-18 | Eastman Kodak Company | Full-color organic display having improved blue emission |
| TWI260185B (en) * | 2005-08-19 | 2006-08-11 | Chunghwa Picture Tubes Ltd | Stacked organic electroluminescence device and method for manufacturing thereof |
| JP2016195070A (en) * | 2015-04-01 | 2016-11-17 | ソニー株式会社 | Display device, display device manufacturing method and electronic equipment |
| CN107068811B (en) * | 2017-03-15 | 2019-06-18 | 京东方科技集团股份有限公司 | The production method and light-emitting diode assembly of light-emitting diode assembly |
| CN107946417B (en) * | 2017-11-29 | 2019-09-03 | 北京工业大学 | A kind of panchromatic Minitype LED array vertical epitaxial preparation method |
| US11522006B2 (en) * | 2017-12-21 | 2022-12-06 | Seoul Viosys Co., Ltd. | Light emitting stacked structure and display device having the same |
| CN109728190A (en) * | 2018-11-26 | 2019-05-07 | 云谷（固安）科技有限公司 | Display panel and display device |
| CN110459558B (en) * | 2019-08-20 | 2021-01-15 | 成都辰显光电有限公司 | Display panel and manufacturing method thereof |
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| CN107833878A (en) * | 2017-11-29 | 2018-03-23 | 北京工业大学 | A kind of Micro LED upside-down mounting array preparation methods of panchromatic stacking-type extension |
| CN109979969A (en) * | 2017-12-27 | 2019-07-05 | 乐金显示有限公司 | The method of miniscope and manufacture miniscope |
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| TWI726699B (en) | 2021-05-01 |
| CN110459558A (en) | 2019-11-15 |
| TW202034297A (en) | 2020-09-16 |
| WO2021031595A1 (en) | 2021-02-25 |
| KR20220020375A (en) | 2022-02-18 |
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