CN110459472B - 增强型GaN场效应晶体管及其制造方法 - Google Patents
增强型GaN场效应晶体管及其制造方法 Download PDFInfo
- Publication number
- CN110459472B CN110459472B CN201910718621.6A CN201910718621A CN110459472B CN 110459472 B CN110459472 B CN 110459472B CN 201910718621 A CN201910718621 A CN 201910718621A CN 110459472 B CN110459472 B CN 110459472B
- Authority
- CN
- China
- Prior art keywords
- layer
- cap layer
- equal
- type
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000002353 field-effect transistor method Methods 0.000 title description 2
- 239000002131 composite material Substances 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 230000005669 field effect Effects 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 43
- 150000004767 nitrides Chemical class 0.000 claims description 27
- 230000006911 nucleation Effects 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 154
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910718621.6A CN110459472B (zh) | 2019-08-05 | 2019-08-05 | 增强型GaN场效应晶体管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910718621.6A CN110459472B (zh) | 2019-08-05 | 2019-08-05 | 增强型GaN场效应晶体管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110459472A CN110459472A (zh) | 2019-11-15 |
CN110459472B true CN110459472B (zh) | 2022-12-09 |
Family
ID=68484884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910718621.6A Active CN110459472B (zh) | 2019-08-05 | 2019-08-05 | 增强型GaN场效应晶体管及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110459472B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112216742B (zh) * | 2020-08-28 | 2023-03-14 | 华灿光电(浙江)有限公司 | 氮化镓基高电子迁移率晶体管外延片及其制备方法 |
CN113725297A (zh) * | 2021-08-24 | 2021-11-30 | 厦门大学 | 一种具有盖帽层的常开型氧化镓基hfet器件及其制备方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011198974A (ja) * | 2010-03-19 | 2011-10-06 | Nec Corp | 半導体構造及びその製造方法 |
CN102376760A (zh) * | 2010-08-25 | 2012-03-14 | 财团法人交大思源基金会 | 增强式高电子移动率晶体管及其制造方法 |
CN102388441A (zh) * | 2009-04-08 | 2012-03-21 | 宜普电源转换公司 | 增强型GaN高电子迁移率晶体管器件及其制备方法 |
CN102623490A (zh) * | 2011-01-31 | 2012-08-01 | 台湾积体电路制造股份有限公司 | 用于氮化镓增强型晶体管的低栅极-泄漏结构和方法 |
CN103077890A (zh) * | 2011-09-28 | 2013-05-01 | 富士通株式会社 | 半导体器件和制造方法 |
CN105895526A (zh) * | 2016-04-26 | 2016-08-24 | 中国科学院微电子研究所 | 一种GaN基功率电子器件及其制备方法 |
WO2017036025A1 (zh) * | 2015-09-01 | 2017-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物增强型hemt及其制备方法 |
CN107887435A (zh) * | 2017-11-28 | 2018-04-06 | 中国科学院半导体研究所 | 增强型GaN HEMT的制备方法 |
CN108376707A (zh) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | 一种GaN基增强型HEMT器件及其制备方法 |
CN108962752A (zh) * | 2018-09-04 | 2018-12-07 | 苏州能屋电子科技有限公司 | p型栅增强型HEMT器件及其制作方法 |
CN109786441A (zh) * | 2019-01-29 | 2019-05-21 | 南方科技大学 | 一种高电子迁移率晶体管及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5487615B2 (ja) * | 2008-12-24 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
JP5985337B2 (ja) * | 2012-09-28 | 2016-09-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9318593B2 (en) * | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
-
2019
- 2019-08-05 CN CN201910718621.6A patent/CN110459472B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102388441A (zh) * | 2009-04-08 | 2012-03-21 | 宜普电源转换公司 | 增强型GaN高电子迁移率晶体管器件及其制备方法 |
JP2011198974A (ja) * | 2010-03-19 | 2011-10-06 | Nec Corp | 半導体構造及びその製造方法 |
CN102376760A (zh) * | 2010-08-25 | 2012-03-14 | 财团法人交大思源基金会 | 增强式高电子移动率晶体管及其制造方法 |
CN102623490A (zh) * | 2011-01-31 | 2012-08-01 | 台湾积体电路制造股份有限公司 | 用于氮化镓增强型晶体管的低栅极-泄漏结构和方法 |
CN103077890A (zh) * | 2011-09-28 | 2013-05-01 | 富士通株式会社 | 半导体器件和制造方法 |
WO2017036025A1 (zh) * | 2015-09-01 | 2017-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物增强型hemt及其制备方法 |
CN105895526A (zh) * | 2016-04-26 | 2016-08-24 | 中国科学院微电子研究所 | 一种GaN基功率电子器件及其制备方法 |
CN107887435A (zh) * | 2017-11-28 | 2018-04-06 | 中国科学院半导体研究所 | 增强型GaN HEMT的制备方法 |
CN108376707A (zh) * | 2018-01-11 | 2018-08-07 | 北京华碳科技有限责任公司 | 一种GaN基增强型HEMT器件及其制备方法 |
CN108962752A (zh) * | 2018-09-04 | 2018-12-07 | 苏州能屋电子科技有限公司 | p型栅增强型HEMT器件及其制作方法 |
CN109786441A (zh) * | 2019-01-29 | 2019-05-21 | 南方科技大学 | 一种高电子迁移率晶体管及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110459472A (zh) | 2019-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7544963B2 (en) | Binary group III-nitride based high electron mobility transistors | |
US7550784B2 (en) | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | |
US7709859B2 (en) | Cap layers including aluminum nitride for nitride-based transistors | |
TWI464876B (zh) | 用於以氮為主之電晶體的帽蓋層和或鈍化層,電晶體結構與其製造方法 | |
US7906799B2 (en) | Nitride-based transistors with a protective layer and a low-damage recess | |
US20100068855A1 (en) | Group III nitride semiconductor devices with silicon nitride layers and methods of manufacturing such devices | |
US8653563B2 (en) | Semiconductor device | |
CN108417627B (zh) | 一种用于制备GaN基高频微波器件的方法 | |
JP4945979B2 (ja) | 窒化物半導体電界効果トランジスタ | |
CN110459472B (zh) | 增强型GaN场效应晶体管及其制造方法 | |
CN108447788B (zh) | 增强型高电子迁移率晶体管的制备方法 | |
KR102111459B1 (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
CN115910782B (zh) | 常关型高电子迁移率晶体管的制造方法 | |
CN213212169U (zh) | 一种半导体器件的外延结构及半导体器件 | |
CN113745333A (zh) | 一种含δ掺杂势垒层的常关型氧化镓基MIS-HEMT器件及其制备方法 | |
KR20140139890A (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
KR102111458B1 (ko) | 질화물 반도체 소자 및 그 제조 방법 | |
TWI798728B (zh) | 半導體結構及其製造方法 | |
US11251264B2 (en) | Semiconductor device and manufacturing method of the same | |
US20230133164A1 (en) | Enhancement-type semiconductor structure and manufacturing method thereof | |
KR20180106026A (ko) | 게이트 누설 전류가 감소된 고 전자 이동도 트랜지스터 | |
CN117038723A (zh) | 一种半导体器件及其制备方法 | |
CN116314282A (zh) | 一种增强型氮化镓基电子器件及其制备方法 | |
CN112242391A (zh) | 改良的hemt器件及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Guo Yanmin Inventor after: Feng Zhihong Inventor after: Bu Aimin Inventor after: Xu Chunliang Inventor after: Fang Yulong Inventor after: Yin Jiayun Inventor after: Li Jia Inventor after: Wang Bo Inventor after: Zhang Zhirong Inventor after: Lu Weili Inventor after: Gao Nan Inventor after: Wang Yuangang Inventor before: Guo Yanmin Inventor before: Feng Zhihong Inventor before: Fang Yulong Inventor before: Yin Jiayun Inventor before: Li Jia Inventor before: Wang Bo Inventor before: Zhang Zhirong Inventor before: Lu Weili Inventor before: Gao Nan Inventor before: Wang Yuangang |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |