CN110444558A - 发光装置及其制造方法 - Google Patents
发光装置及其制造方法 Download PDFInfo
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- CN110444558A CN110444558A CN201910740472.3A CN201910740472A CN110444558A CN 110444558 A CN110444558 A CN 110444558A CN 201910740472 A CN201910740472 A CN 201910740472A CN 110444558 A CN110444558 A CN 110444558A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
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- 239000004065 semiconductor Substances 0.000 claims abstract description 51
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- 238000010438 heat treatment Methods 0.000 claims description 18
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Abstract
一种发光装置,包括基底、设置于基底上的多个接垫、牺牲图案层及设置于牺牲图案层上的发光二极管元件。发光二极管元件包括第一型半导体层、第二型半导体层、主动层、多个电极以及分别设置于多个电极上的多个连接图案。多个连接图案的材料包括可热流动的导电材料。多个连接图案覆盖牺牲图案层的侧壁且电性连接至多个接垫。此外,上述发光装置的制造方法也被提出。
Description
技术领域
本发明是有关于一种电子装置及其制造方法,且特别是有关于一种发光装置及其制造方法。
背景技术
转置微元件技术已使用在新兴电子装置的制程中。以发光装置的制程为例,其包括下列步骤:提供具有多个转置凸块的弹性转置头;提供多个发光二极管元件,令弹性转置头的转置凸块与发光二极管元件接触,进而提取所欲的发光二极管元件;利用弹性转置头将发光二极管元件转置到接收基板的接合层上;在载有多个发光二极管元件的接收基板上制作互连层,以使发光二极管元件与接收基板的接垫电性连接。然而,多个发光二极管元件、接收基板的接垫及互连层之间需精准对位,方能使发光二极管元件与接收基板的接垫电性连接,造成发光装置的制造良率独不易提升。
发明内容
本发明提供一种发光装置及其制造方法,制造良率高。
本发明的一种发光装置,包括基底、多个接垫、牺牲图案层及发光二极管元件。多个接垫设置于基底上。牺牲图案层设置于基底上。发光二极管元件设置于牺牲图案层上。发光二极管元件包括第一型半导体层、相对于第一型半导体层的第二型半导体层、位于第一型半导体层与第二型半导体层之间的主动层、分别与第一型半导体层及第二型半导体层电性连接的多个电极以及分别设置于多个电极上的多个连接图案。多个连接图案的材料包括可热流动的导电材料,而多个连接图案覆盖牺牲图案层的侧壁且电性连接至多个接垫。
本发明的一种发光装置,包括下列步骤:提供基底及设置于基底上的多个接垫;形成牺牲材料层于基底上,以覆盖多个接垫;设置发光二极管元件于牺牲材料层上,其中发光二极管元件包括第一型半导体层、第二型半导体层、位于第一型半导体层与第二型半导体层之间的主动层、分别与第一型半导体层及第二型半导体层电性连接的多个电极以及分别设置于多个电极上的多个连接图案,且多个连接图案的材料包括可热流动导电材料。图案化牺牲材料层,以形成牺牲图案层,且使发光二极管元件的多个连接图案与多个接垫之间形成多个间隙,其中牺牲图案层暴露多个接垫的每一个的至少一部分;以及进行加热工序,以使多个连接图案流动,而分别与多个接垫电性连接。
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。
附图说明
图1A至图1C为本发明第一实施例的发光装置的制造流程剖面示意图。
图2A至图2C为本发明第二实施例的发光装置的制造流程剖面示意图。
图3A至图3C为本发明第三实施例的发光装置的制造流程剖面示意图。
图4A至图4C为本发明第四实施例的发光装置的制造流程剖面示意图。
图5A至图5C为本发明第五实施例的发光装置的制造流程剖面示意图。
图6为本发明第五实施例的发光装置的俯视示意图。
图7A至图7F为本发明第六实施例的发光装置的制造流程剖面示意图。
图8A至图8F为本发明第六实施例的发光装置的制造流程俯视示意图。
图9A至图9F为本发明第七实施例的发光装置的制造流程剖面示意图。
图10A至图10F为本发明第七实施例的发光装置的制造流程俯视示意图。
其中,附图标记
100、100~100F:发光装置
110:基底
120:驱动线路层
130:接垫组
130a、130b:接垫
130a1、130b1、156b1、159a:表面
140:牺牲材料层
142:牺牲图案层
142a:侧壁
150、150-1、150-2、150-3:发光二极管元件
151:绝缘层
151a、151b:开口
152a:第一型半导体层
152b:第二型半导体层
154:主动层
156a、156b:电极
158a、158b:连接图案
159:辅助电极
160:第一介电层
162、164、192、194:接触窗
170:辅助导电图案
182、184:互连图案
182a、184a:部分
190:第二介电层
A:主动元件基板
D1、D2:厚度
g:间隙
H1、H2:距离
R:区域
Ι-Ι’、II-II’:剖线
具体实施方式
下面结合附图和具体实施例对本发明技术方案进行详细的描述,以更进一步了解本发明的目的、方案及功效,但并非作为本发明所附权利要求保护范围的限制。
在附图中,为了清楚起见,放大了层、膜、面板、区域等的厚度。在整个说明书中,相同的附图标记表示相同的元件。应当理解,当诸如层、膜、区域或基板的元件被称为在另一元件「上」或「连接到」另一元件时,其可以直接在另一元件上或与另一元件连接,或者中间元件可以也存在。相反,当元件被称为「直接在另一元件上」或「直接连接到」另一元件时,不存在中间元件。如本文所使用的,「连接」可以指物理及/或电性连接。再者,「电性连接」或「耦合」可为二元件间存在其它元件。
本文使用的「约」、「近似」、或「实质上」包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值,考虑到所讨论的测量和与测量相关的误差的特定数量(即,测量***的限制)。例如,「约」可以表示在所述值的一个或多个标准偏差内,或±30%、±20%、±10%、±5%内。再者,本文使用的「约」、「近似」或「实质上」可依光学性质、蚀刻性质或其它性质,来选择较可接受的偏差范围或标准偏差,而可不用一个标准偏差适用全部性质。
除非另有定义,本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是,诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义,并且将不被解释为理想化的或过度正式的意义,除非本文中明确地这样定义。
本文参考作为理想化实施方式的示意图的截面图来描述示例性实施方式。因此,可以预期到作为例如制造技术及/或公差的结果的图示的形状变化。因此,本文所述的实施方式不应被解释为限于如本文所示的区域的特定形状,而是包括例如由制造导致的形状偏差。例如,示出或描述为平坦的区域通常可以具有粗糙及/或非线性特征。此外,所示的锐角可以是圆的。因此,图中所示的区域本质上是示意性的,并且它们的形状不是旨在示出区域的精确形状,并且不是旨在限制权利要求的范围。
现将详细地参考本发明的示范性实施例,示范性实施例的实例说明于所附图式中。只要有可能,相同元件符号在图式和描述中用来表示相同或相似部分。
图1A至图1C为本发明第一实施例的发光装置的制造流程剖面示意图。
请参照图1A,首先,提供主动元件基板A。主动元件基板A包括基底110以及设置于基底110上的多个接垫130a、130b。在本实施例中,接垫130a、130b的材料例如为金属,但本发明不以此为限。在本实施例中,主动元件基板A还包括驱动线路层120,与接垫130a、130b电性连接。举例而言,驱动线路层120可包括数据线(未绘示)、扫描线(未绘示)、电源线(未绘示)、共通线(未绘示)、第一电晶体(未绘示)及第二电晶体(未绘示),第一电晶体具有第一端、第二端与控制端,第二电晶体也具有第一端、第二端与控制端,第一电晶体的第一端电性连接至数据线,第一电晶体的控制端电性连接至扫描线,第一电晶体的第二端电性连接至第二电晶体的控制端,第二电晶体的第一端电性连接至电源线,第二电晶体的第二端电性连接至接垫130a、130b的一者,而接垫130a、130b的另一者电性连接至共通线。然而,本发明不限于此,在其它实施例中,驱动线路层120也可以是其它样态。
请参照图1A,接着,形成牺牲材料层140于基底110上,以覆盖多个接垫130a、130b。牺牲材料层140也可称接合层(bonding layer)。举例而言,在本实施例中,牺牲材料层140的材质可以是光阻、热固化胶或其它适当材料。
请参照图1A,接着,设置发光二极管元件150于牺牲材料层140上。发光二极管元件150藉由牺牲材料层140接合于主动元件基板A上。发光二极管元件150包括第一型半导体层152a、第二型半导体层152b、位于第一型半导体层152a与第二型半导体层152b之间的主动层154以及分别与第一型半导体层152a及第二型半导体层152b电性连接的多个电极156a、156b。
在本实施例中,多个电极156a、156b位于第一型半导体层152a的同一侧。也就是说,发光二极管元件150为水平式发光二极管。此外,发光二极管元件150还包括绝缘层151,设置于第一型半导体层152a与第二型半导体层152b上,且具有分别与第一型半导体层152a与第二型半导体层152b重叠的多个开口151a、151b,其中多个电极156a、156b分别透多个开口151a、151b与第一型半导体层152a及第二型半导体层152b电性连接。
值得注意的是,发光二极管元件150还包括多个连接图案158a、158b,且多个连接图案158a、158b的材料包括可热流动导电材料。可热流动导电材料受热后能流动。主动元件基板A及牺牲材料层140的耐温性高于可热流动导电材料的耐温性。举例而言,在本实施例中,可热流动导电材料的材料可包括铟(In)、锡(Sn)、其它适当材料或其组合,但本发明不以此为限。
发光二极管元件150的多个连接图案158a、158b分别设置于多个电极156a、156b上。举例而言,在本实施例中,连接图案158a、158b除了设置于电极156a、156b上,更设置于由第一型半导体层152a、第二型半导体层152b及主动层154构成的叠构的侧壁上,但本发明不以此为限。
请参照图1A及图1B,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与多个接垫130a、130b之间形成多个间隙g,其中牺牲图案层142暴露多个接垫130a、130b的每一个的至少一部分。
举例而言,在本实施例中,以发光二极管元件150为遮罩,对牺牲材料层140进行过蚀刻制程,以形成牺牲图案层142。牺牲图案层142的侧壁142a、连接图案158a、158b及多个接垫130a、130b之间具有多个间隙g。在本实施例中,牺牲图案层142于基底110上的垂直投影可位于发光二极管元件150于基底110上的垂直投影以内,且牺牲图案层142于基底110上的垂直投影的面积可小于发光二极管元件150于基底110上的垂直投影的面积,但本发明不以此为限。
请参照图1B及图1C,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与多个接垫130a、130b电性连接。上述加热工序可以是局部加热(local heating)或整体加热(globalheating),端视实际需求而定。举例而言,可使用激光熔接(laser welding)进行局部加热;利用加热炉(Oven)或加热板(hot plate)进行整体加热;但本发明不以此为限。于此,便完成本实施例的发光装置100。在本实施例中,发光装置100例如是显示装置。然而,本发明不限于此,在其它实施例中,发光装置100也可以是提供照明光束的电子装置,例如但不限于:背光源。
值得一提的是,在本实施例中,以发光二极管元件150本身为遮罩,图案化位于发光二极管元件150下的牺牲材料层140,以形成牺牲图案层142;然后,再使发光二极管元件150本身的连接图案158a、158b分别流动至主动元件基板A的接垫130a、130b上,以使发光二极管元件150与主动元件基板A电性连接。藉此,能降低被巨量转移的多个发光二极管元件150与主动元件基板A的多个接垫130a、130b之间的对位精度要求,进而提升发光装置100的制造良率。
请参照图1C,发光装置100包括基底110、多个接垫130a、130b、牺牲图案层142以及发光二极管元件150。多个接垫130a、130b设置于基底110上。牺牲图案层142至少设置于多个接垫130a、130b之间的区域R,且具有侧壁142a。发光二极管元件150设置于牺牲图案层142上。牺牲图案层142位于发光二极管元件150的第一型半导体层152a与基底110之间。连接图案158a、158b覆盖牺牲图案层142的侧壁142a,且电性连接至多个接垫130a、130b。在本实施例中,连接图案158a、158b可接触于牺牲图案层142的侧壁142a及多个接垫130a、130b的表面130a1、130b1,但本发明不以此为限。
在本实施例中,发光二极管元件150的主动层154可设置于发光二极管元件150的多个电极156a、156b和牺牲图案层142之间。也就是说,在本实施例中,发光二极管元件150的多个电极156a、156b可以选择性地朝上。然而,本发明不限于此,根据其它实施例,发光二极管元件150的多个电极156a、156b可朝下,以下配合其它图2A至图2C举例说明之。
图2A至图2C为本发明第二实施例的发光装置的制造流程剖面示意图。第二实施例的发光装置100A的制造流程与第一实施例的发光装置100的制造流程类似,两者的主要差异在于:发光二极管元件150设置于主动元件基板A上的方式不同,以下配合图2A至图2C具体说明之。
请参照图2A,首先,提供主动元件基板A。主动元件基板A包括基底110以及设置于基底110上的多个接垫130a、130b。在本实施例中,接垫130a的表面130a1与基底110的距离H1可选择性地大于接垫130b的表面130b1与基底110的距离H2。也就是说,接垫130a的厚度D1可大于接垫130b的厚度D2。
请参照图2A,接着,形成牺牲材料层140于基底110上,以覆盖多个接垫130a、130b。然后,设置发光二极管元件150于牺牲材料层140上。通过具有不同厚度的接垫130a、130b可弥补发光二极管元件150的多个电极156a、156b的高低差。藉此,夹设于连接图案158a与接垫130a之间的部分牺牲材料层140的厚度大致上可等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度,以利后续图案化牺牲材料层140。
请参照图2A及图2B,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与多个接垫130a、130b之间形成多个间隙g,其中牺牲图案层142暴露多个接垫130a、130b的每一个的至少一部分。如图2A所示,在本实施例中,由于夹设于连接图案158a与接垫130a之间的部分牺牲材料层140的厚度大致上等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度,因此,以发光二极管元件150为遮罩对牺牲材料层140进行过蚀刻制程时,能容易地在连接图案158a与接垫130a之间及连接图案158b与接垫130b之间形成多个间隙g,而不易出现不良现象(例如但不限于:连接图案158b与接垫130b之间已形成间隙g而连接图案158a与接垫130a之间尚未形成间隙g的情形)。
请参照图2B及图2C,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与多个接垫130a、130b电性连接。于此,便完成本实施例的发光装置100A。
请参照图2C,本实施例的发光装置100A与第一实施例的发光装置100类似,两者主要的差异在于:发光二极管元件150的电极156a、156b设置于发光二极管元件150的主动层154与牺牲图案层142之间。也就是说,在本实施例中,发光二极管元件150的多个电极156a、156b可以选择性地朝下。此外,在本实施例中,牺牲图案层142除了接触于连接图案142外,还接触于发光二极管元件150的位于多个电极156a、156b之间的绝缘层151。
图3A至图3C为本发明第三实施例的发光装置的制造流程剖面示意图。第三实施例的发光装置100B的制造流程与第二实施例的发光装置100A的制造流程类似,两者的主要差异在于:第三实施例的弥补发光二极管元件150的多个电极156a、156b的高低差的方式与第二实施例的弥补发光二极管元件150的多个电极156a、156b的高低差的方式不同,以下配合图3A至图3C具体说明之。
请参照图3A,首先,提供主动元件基板A。主动元件基板A包括基底110以及设置于基底110上的多个接垫130a、130b。与第二实施例不同的是,本实施例的主动元件基板A还包括辅助导电图案170,设置于接垫130a上且与接垫130a电性连接。具体而言,主动元件基板A还包括第一介电层160,第一介电层160设置于多个接垫130a、130b上且具有第一接触窗162,辅助导电图案170设置于第一介电层160上且通过第一接触窗162与接垫130a电性连接。此外,第一介电层160还具有第二接触窗164,与接垫130b重叠。
请参照图3A,接着,形成牺牲材料层140于基底110上,以覆盖多个接垫130a、130b。在本实施例中,牺牲材料层140设置于辅助导电图案170以及第一介电层160上,而位于多个接垫130a、130b的上方。然后,设置发光二极管元件150于牺牲材料层140上。辅助导电图案170的设置可弥补发光二极管元件150的多个电极156a、156b的高低差。也就是说,夹设于连接图案158a与辅助导电图案170之间的部分牺牲材料层140的厚度大致上可等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度,以利后续图案化牺牲材料层140。
请参照图3A及图3B,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与辅助导电图案170及接垫130b之间形成多个间隙g,其中牺牲图案层142暴露辅助导电图案170及接垫130b的每一个的至少一部分。如图3A所示,在本实施例中,由于夹设于连接图案158a与辅助导电图案170之间的部分牺牲材料层140的厚度大致上等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度,因此,以发光二极管元件150为遮罩对牺牲材料层140进行过蚀刻制程时,能容易地在连接图案158a与接垫130a之间及连接图案158b与接垫130b之间形成多个间隙g,不易出现不良现象(例如但不限于:连接图案158b与接垫130b之间已形成间隙g而连接图案158a与接垫130a之间尚未形成间隙g的情形)。
请参照图3B及图3C,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与辅助导电图案170及接垫130b电性连接。在本实施例中,包括可热流动导电材料的连接图案158a与辅助导电图案170接触,而辅助导电图案170可视为一接垫。牺牲图案层142至少设置于辅助导电图案170与接垫130b之间的区域R。此外,在本实施例中,另一连接图案158b通过第一介电层160的第二接触窗164与接垫130b电性连接。于此,便完成本实施例的发光装置100B。
图4A至图4C为本发明第四实施例的发光装置的制造流程剖面示意图。第四实施例的发光装置100C的制造流程与第三实施例的发光装置100B的制造流程类似,两者的主要差异在于:第四实施例的弥补发光二极管元件150的多个电极156a、156b的高低差的方式与第三实施例的弥补发光二极管元件150的多个电极156a、156b的高低差的方式不同,以下配合图4A至图4C说明之。
请参照图4A,首先,提供主动元件基板A。主动元件基板A包括基底110以及设置于基底110上的多个接垫130a、130b。与第三实施例不同的是,本实施例的主动元件基板A不包括辅助导电图案170。
请参照图4A,接着,形成牺牲材料层140于基底110上,以覆盖多个接垫130a、130b。然后,设置发光二极管元件150于牺牲材料层140上。与第三实施例不同的是,本实施例的发光二极管元件150与第三实施例的发光二极管元件150不同。具体而言,本实施例的发光二极管元件150还包括辅助电极159,设置于发光二极管元件150的其中一个电极156a上,且与所述电极156a电性连接。当发光二极管元件150设置于牺牲材料层140上时,辅助电极159的朝向主动元件基板A的接垫130a的表面159a与另一电极156b的朝向主动元件基板A的接垫130b的表面156b1大致上可共平面。连接图案158a及连接图案158b分别设置于辅助电极159的表面159a及电极156b的表面156b1上,且分别与辅助电极159及电极156b电性连接。由于连接图案158a设置于用以弥补电极156a、156b的高低差的辅助电极159上,因此夹设于连接图案158a与接垫130a之间的部分牺牲材料层140的厚度大致上可等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度,以利后续图案化牺牲材料层140。
请参照图4A及图4B,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与多个接垫130a、130b之间形成多个间隙g,其中牺牲图案层142暴露多个接垫130a、130b的每一个的至少一部分。如图4A所示,在本实施例中,发光二极管元件150的辅助电极159弥补了电极156a与电极156b的高低差,而使夹设于连接图案158a与接垫130a之间的部分牺牲材料层140的厚度大致上等于夹设于连接图案158b与接垫130b之间的部分牺牲材料层140的厚度。因此,以发光二极管元件150为遮罩对牺牲材料层140进行过蚀刻制程时,能容易地在连接图案158a与接垫130a之间及连接图案158b与接垫130b之间形成多个间隙g,而不易出现不良现象(例如但不限于:连接图案158b与接垫130b之间已形成间隙g而连接图案158a与接垫130a之间尚未形成间隙g的情形)。
请参照图4B及图4C,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与多个接垫130a、130b电性连接。于此,便完成本实施例的发光装置100C。
前述第一~四实施例绘出发光装置100、100A~100C的一个画素的制造流程为示例。本领域技术人员应能了解前述一个画素的制造流程能用以同时制造多个画素,以下配合图5A至图5C及图6举例说明之。
图5A至图5C为本发明第五实施例的发光装置的制造流程剖面示意图。图6为本发明第五实施例的发光装置的俯视示意图。图5C对应图6的剖线I-I’。图6绘出图5C的基底110及发光二极管元件150,而省略图5C的其它构件。
请参照图5A,首先,提供主动元件基板A。主动元件基板A包括基底110以及设置于基底110上的多个接垫组130,每一接垫组130包括前述多个接垫130a、130b。接着,形成牺牲材料层140于基底110上,以覆盖多个接垫组130。然后,设置多个发光二极管元件150于牺牲材料层140上。多个发光二极管元件150藉由牺牲材料层140接合于主动元件基板A上。
请参照图5A及图5B,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使多个发光二极管元件150的多个连接图案158a、158b与多个接垫130a、130b之间形成多个间隙g,其中牺牲图案层142暴露多个接垫130a、130b的每一个的至少一部分。
请参照图5B、图5C及图6,接着,进行加热工序,以使多个发光二极管元件150的多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与多个接垫130a、130b电性连接。于此,便完成本实施例的发光装置100D。
前述第一~五实施例说明利用包括可热流动导电材料的连接图案158a、158b直接地开始制作发光装置100、100A~100D。然而,本发明不限于此,包括可热流动导电材料的连接图案158a、158b的发光二极管元件150也可用以修补已完成的发光装置,以下配合图7A至图7F和图8A至图8F以及图9A至图9F和图10A至图10F举例说明之。
图7A至图7F为本发明第六实施例的发光装置的制造流程剖面示意图。图8A至图8F为本发明第六实施例的发光装置的制造流程俯视示意图。图8A至图8F分别对应图7A至图7F的剖线Ι-Ι’、II-II’。图8A至图8F绘示7A至图7F的发光二极管元件150、互连图案182、184及基底110,而省略图7A至图7F的其它构件。
请参照图7A及图8A,图7A及图8A示出利用一般方法制成的发光装置。具体而言,利用一般方法已完成的发光装置包括主动元件基板A、多个发光二极管元件150-1、150-2以及多个互连图案182、184。
请参照图7A及图8A,利用一般方法已完成发光装置后,接着,检测发光装置,而发现发光二极管元件150-2异常及/或与主动元件基板A之间的电性连接不良。请参照图7A、图7B、图8A及图8B,接着,移除发光二极管元件150-2。移除发光二极管元件150-2时,设置于发光二极管元件150-2上的互连图案182的一部分及设置于发光二极管元件150-2上的互连图案184的一部分会随发光二极管元件150-2被移除,而设置在第二介电层190上的互连图案182的另一部分及设置在第二介电层190上的互连图案184的另一部分会被留在基底110上,如图7B及图8B所示。
请参照图7C及图8C,接着,形成牺牲材料层140于基底110上,以覆盖多个接垫130a、130b。在本实施例中,牺牲材料层140形成于与原本的发光二极管元件150-2重叠的部分第二介电层190和位于发光二极管元件150-2两侧的部分互连图案182及部分互连图案184。
请参照图7D及图8D,接着,设置发光二极管元件150-3于牺牲材料层140上。发光二极管元件150-3藉由牺牲材料层140接合于主动元件基板A上。发光二极管元件150-3也包括前述的多个连接图案158a、158b。
请参照图7D、图7E、图8D及图8E,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与部分互连图案182、184之间形成多个间隙g,其中牺牲图案层142暴露部分互连图案182、184的每一个的至少一部分。举例而言,在本实施例中,以发光二极管元件150-3为遮罩,对牺牲材料层140进行过蚀刻制程,以形成牺牲图案层142。对牺牲材料层140进行过蚀刻制程时,牺牲图案层142的侧壁142a及互连图案182、184之间具有多个间隙g。
请参照图7F及图8F,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与残留在基底110上的互连图案182、184电性连接。在本实施例中,发光二极管元件150-3的连接图案158a、158b会与互连图案182、184接触且电性连接。互连图案182、184也可视为接垫。牺牲图案层142至少设置于互连图案182与互连图案184之间的区域R。发光二极管元件150-3的连接图案158a、158b通过互连图案182、184与接垫130a、130b电性连接。于此,便完成修补后的发光装置100E。
需说明的是,在本实施例中,发光二极管元件150-1的电极156b与修补用的发光二极管元件150-3的电极156b彼此电性连接。也就是说,正常的发光二极管元件150-1与用以修补的发光二极管元件150-3属于同一个画素。然而,本发明不限于此,根据其它实施例,正常的发光二极管元件150-1的电极156b与用以修补的发光二极管元件150-3的电极156b也彼此电性独立;也就是说,正常的发光二极管元件150-1与用以修补的发光二极管元件150-3也可分别属于不同的画素。
如图7F及图8F所示,在本实施例中,用以取代原本的发光二极管元件150-2的发光二极管元件150-3设置在原本发光二极管元件150-2所设置的位置上。也就是说,在本实施例中,新的发光二极管元件150-3与接垫130a、130b重叠。然而,本发明不限于此,在其它实施例中,用以取代原本的发光二极管元件150-2的发光二极管元件150-3也可不设置在原本发光二极管元件150-2所设置的位置上,以下配合图9A至图9F和图10A至图10F举例说明之。
图9A至图9F为本发明第七实施例的发光装置的制造流程剖面示意图。图10A至图10F为本发明第七实施例的发光装置的制造流程俯视示意图。图9A至图9F分别对应图10A至图10F的剖线Ι-Ι’、II-II’。图10A至图10F绘示9A至图9F的发光二极管元件150、互连图案182、184及基底110,而省略图9A至图9F的其它构件。
请参照图9A及图10A,首先,提供主动元件基板A。主动元件基板A包括基底110、设置于基底110上的驱动线路层120、与驱动线路层120电性连接的多个接垫130a、130b以及设置于多个接垫130a、130b上的第二介电层190。第二介电层190具有接触窗192、194,分别重叠于多个接垫130a、130b。发光二极管元件150-1设置于第二介电层190上。多个互连图案182、184分别设置于发光二极管元件150-1的多个电极156a、156b上,且通过第二介电层190的接触窗192、194分别与多个接垫130a、130b电性连接。特别是,在本实施例中,互连图案182、184具有延伸至接垫130a、130b外而不与接垫130a、130b重叠的一部分182a、184a。
请参照图9A及图10A,利用一般方法制成发光装置后,接着,检测发光装置,而发现发光二极管元件150-1异常及/或与主动元件基板A之间的电性连接不良。请参照图9A、图9B、图10A及图10B,接着,移除发光二极管元件150-1。
请参照图9C及图10C,接着,形成牺牲材料层140于基底110上,以覆盖互连图案182的未与接垫130a、130b重叠的一部分182a及互连图案184的未与接垫130b重叠的一部分184a。
请参照图7D及图8D,接着,设置发光二极管元件150-3于牺牲材料层140上。发光二极管元件150-3藉由牺牲材料层140接合于主动元件基板A上。发光二极管元件150-3也包括前述的多个连接图案158a、158b。
请参照图9D、图9E、图9D及图9E,接着,图案化牺牲材料层140,以形成牺牲图案层142,且使发光二极管元件150的多个连接图案158a、158b与部分互连图案182a、184a之间形成多个间隙g,其中牺牲图案层142暴露部分互连图案182a、184a的每一个的至少一部分。
请参照图9F及图10F,接着,进行加热工序,以使多个连接图案158a、158b变成可流动的,可流动的连接图案158a、158b受到重力的作用向下流动,而分别与未和接垫130a、130b重叠的部分182a互连图案182及未与接垫130b重叠的部分184a互连图案184电性连接。在本实施例中,发光二极管元件150-3的连接图案158a、158b会与互连图案182的一部分182a及互连图案184的一部分184a接触且电性连接。互连图案182的一部分182a及互连图案184的一部分184a也可视为接垫。牺牲图案层142至少设置于互连图案182的部分182a与互连图案184的部分184a之间的区域R。发光二极管元件150-3的连接图案158a、158b通过互连图案182、184与接垫130a、130b电性连接。于此,便完成修补后的发光装置100F。
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (13)
1.一种发光装置,其特征在于,其特征在于,包括:
一基底;
多个接垫,设置于该基底上;
一牺牲图案层,设置于该基底上,且具有一侧壁;以及
一发光二极管元件,设置于该牺牲图案层上,其中该发光二极管元件包括:
一第一型半导体层;
一第二型半导体层,相对于该第一型半导体层;
一主动层,位于该第一型半导体层与该第二型半导体层之间;
多个电极,分别与该第一型半导体层及该第二型半导体层电性连接;以及
多个连接图案,分别设置于该些电极上,其中该些连接图案的材料包括一可热流动的导电材料,而该些连接图案覆盖该牺牲图案层的该侧壁且电性连接至该些接垫。
2.如权利要求1所述的发光装置,其特征在于,该发光二极管元件的该主动层设置于该发光二极管元件的该些电极和该牺牲图案层之间。
3.如权利要求1所述的发光装置,其特征在于,该发光二极管元件的该些电极设置于该发光二极管元件的该主动层与该牺牲图案层之间。
4.如权利要求3所述的发光装置,其特征在于,该发光二极管元件还包括:
一绝缘层,设置于该第一型半导体层与该第二型半导体层上,且具有分别与该第一型半导体层与该第二型半导体层重叠的多个开口,该些电极分别通过该绝缘层的该些开口与该第一型半导体层及该第二型半导体层电性连接;
其中,该牺牲图案层接触于该发光二极管元件的该绝缘层及该些连接图案。
5.如权利要求3所述的发光装置,其特征在于,该些接垫的一与该些连接图案的一接触的一表面与该基板的距离大于该些接垫的另一与该些连接图案的另一接触的一表面与该基板的距离。
6.如权利要求3所述的发光装置,其特征在于,该些接垫的一的厚度大于该些接垫的另一的厚度。
7.如权利要求3所述的发光装置,其特征在于,更包括:
一辅助导电图案,设置于该些接垫之一上,且与该些接垫的该一电性连接。
8.如权利要求7所述的发光装置,其特征在于,更包括:
一第一介电层,设置于该些接垫上,且具有一第一接触窗,其中该辅助导电图案设置于该第一介电层上且通过该第一接触窗与该些接垫的该一电性连接。
9.如权利要求8所述的发光装置,其特征在于,该第一介电层还具有一第二接触窗,该第二接触窗与该些接垫的另一重叠,而该些连接图案的一通过该第二接触窗与该些接垫的该另一电性连接。
10.如权利要求1所述的发光装置,其特征在于,还包括:
一第二介电层,设置于该些接垫上,且具有分别与该些接垫重叠的多个接触窗;
多个互连图案,设置于该第二介电层上,且通过该第二介电层的该些接触窗与分别该些接垫电性连接;
其中,该牺牲图案设置于该第二介电层上,而该发光二极管元件的该些连接图案分别与该些互连图案电性连接。
11.一种发光装置的制造方法,其特征在于,包括:
提供一基底以及设置于该基底上的多个接垫;
形成一牺牲材料层于该基底上,以覆盖该些接垫;
设置一发光二极管元件于该牺牲材料层上,其中该发光二极管元件包括一第一型半导体层、一第二型半导体层、位于该第一型半导体层与该第二型半导体层之间的一主动层、分别与该第一型半导体层及该第二型半导体层电性连接的多个电极以及分别设置于该些电极上的多个连接图案,且该些连接图案的材料包括一可热流动导电材料;
图案化该牺牲材料层,以形成一牺牲图案层,且使该发光二极管元件的该些连接图案与该些接垫之间形成多个间隙,其中该牺牲图案层暴露该些接垫的每一个的至少一部分;以及
进行一加热工序,以使该些连接图案流动,而分别与该些接垫电性连接。
12.如权利要求11所述的发光装置的制造方法,其特征在于,图案化该牺牲材料层以形成该牺牲图案层的步骤包括:
以该发光二极管元件为一遮罩,对该牺牲材料层进行一过蚀刻制程,以形成该牺牲图案层。
13.如权利要求12所述的发光装置的制造方法,其特征在于,该牺牲图案层于该基底上的一垂直投影位于该发光二极管元件于该基底上的一垂直投影以内,且该牺牲图案层于该基底上的该垂直投影的面积小于该发光二极管元件于该基底上的该垂直投影的面积。
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