CN110424054A - The preparation method and application of two-dimensional layer GeP nanometer monocrystalline film - Google Patents
The preparation method and application of two-dimensional layer GeP nanometer monocrystalline film Download PDFInfo
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- CN110424054A CN110424054A CN201910826293.1A CN201910826293A CN110424054A CN 110424054 A CN110424054 A CN 110424054A CN 201910826293 A CN201910826293 A CN 201910826293A CN 110424054 A CN110424054 A CN 110424054A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
Abstract
Preparation step: a kind of preparation method and application of two-dimensional layer GeP nanometer monocrystalline film (1) weighs Ge, P and Bi and is fitted into quartz ampoule simultaneously tube sealing；(2) make Ge and P combination reaction；(3) quartz ampoule is centrifugated, obtains GeP body block monocrystalline；(4) GeP body block monocrystalline is placed in dilute hydrochloric acid and cleans up；(5) it is put into the centrifuge tube equipped with dehydrated alcohol and is ultrasonically treated, obtain alcohol suspending liquid；(6) centrifugal treating；(7) supernatant is taken out, is diluted with ethyl alcohol, obtains the weak solution of GeP nano thin-film.The two-dimensional layer GeP nanometer monocrystalline film of preparation carries out passive Q-adjusted or mode locking to laser for saturated absorbing body and modulates and make photon or opto-electronic device, catalysis and lithium cell cathode material.The present invention grown large scale, high quality GeP body block monocrystalline, and the GeP nano thin-film of preparation is direct band-gap semicondictor, is realized using simple GeP and adjusts Q and mode-locked laser, obtains higher pulse peak power and pulse energy in 1-3 μm infrared broadband.
Description
Technical field
The present invention relates to a kind of flux growth metrhod of two-dimensional layer GeP body block monocrystalline growth and nano thin-film preparation method,
And the photoelectric device application of GeP nano thin-film, belong to two-dimensional layer material and its photoelectric functional device applied technical field.
Background technique
Two-dimensional layer nano material (referred to as " two-dimensional material ") refer to electronics only can free movement on two dimensions, it is horizontal
It is larger to size, and thickness direction only has the material of one or several atomic layer level thickness.Since graphene in 2004 appearance with
Come, which is grown continuously and fast.So far, it has been found that two-dimensional material cover from insulator, half
The different types such as conductor, conductor to superconductor, such as: graphene, silene, black phosphorus, magnesium-yttrium-transition metal chalcogen compound, six sides nitridation
Boron.Two-dimensional material is in photoelectric device, spin electric device and optical electrical catalyst, lithium battery, solar battery, super capacitor
The fields such as the energy conversions such as device and storage have shown important application value, and two-dimensional material is expected to transmit in the information of a new generation
Device is widely used with energy storage device field.
For graphene because of the carrier mobility with superelevation, specific surface area of extremely low resistivity and superelevation etc. is brilliant
Property, causes the extensive concern of people, and a large amount of valuable research has also been made, but due to the spy of its " zero band gap "
Point significantly limits it in the application of photoelectric field.
Therefore, people start to explore other New Two Dimensional materials, and transient metal chalcogenide compound is a type graphene
Material, chemical formula MX2(M is transition metal element such as Mo, W etc., X S, Se and Te etc.), the transient metal chalcogenide of single layer
Close object be X-M-X covalent bond form sandwich sandwich structure, M clipper among two layers of X atomic layer, between layers for
Van der Waals interaction.Wherein, MoS2It is a kind of transient metal chalcogenide compound being widely studied, MoS2Band gap is adjustable, body block
MoS2For indirect band-gap semiconductor, band gap is 1.2eV or so, single layer MoS2For direct band-gap semicondictor, band gap 1.9eV, directly
The material photoelectric conversion efficiency of band gap is higher, therefore MoS2There is boundless application prospect in photoelectric field.Black phosphorus is one
The novel direct band gap two-dimensional semiconductor material of kind, band gap is adjustable, has very high electron mobility (~1000cm2/ Vs),
And very high leakage current modulation rate (being 10000 times of graphene), therefore black phosphorus is in photoelectricity, catalysis, bio-sensing, spin
It is with important application prospects in electronics, lithium ion battery, supercapacitor and solar battery.But since phosphorus has one
To lone pair electrons, be easy to react with water, therefore the black phosphorus for lacking layer is extremely unstable in air, the device stability of preparation compared with
Difference cannot fundamentally solve the steady of black phosphorus although can be improved its stability by means such as surface modification or claddings
The problem of qualitative difference, to greatly limit it in the application of field of optoelectronic devices.
GeP belongs to IV-V race's binary compound, is a kind of novel two-dimensional layer material.GeP has tetragonal phase and monocline
Two kinds of structures of phase, wherein the GeP of monoclinic phase is two-dimensional layered structure, [Ge2P6] by top connection altogether to form two dimension flat for structural unit
Face, interlayer are accumulated to form GeP by Van der Waals force along the direction [20-1].GeP is for black phosphorus, due to more stable Ge
The general P elements of element substitution, and Ge plays the protective effect to internal layer phosphorus, therefore its air stability greatly improves.
The GeP of body block is indirect band-gap semiconductor, and band gap width 0.51eV, the GeP nano thin-film of single layer is a kind of straight
Tape splicing gap semiconductor material, band gap width reach 1.58eV.GeP is a kind of p-type semiconductor, for magnesium-yttrium-transition metal chalcogenide
Object, most of is all n-type semiconductor, and relative to the black phosphorus for being all p-type semiconductor, air stability is good.GeP is excellent due to its
Good semiconducting behavior and excellent air stability, therefore it has important application value in terms of opto-electronic device.
GeP crystal is grown using high temperature and high pressure method earliest, and the crystalline size of acquisition is smaller, second-rate.Using gas phase
Method prepares film, and obtained film quality is not equally high, and there are a large amount of defect and crystal boundaries, seriously affects the performance of device.
Researcher using pressurized melt method can grow GeP body block crystal (Journal of Crystal Growth,
443,2016,75-80), this method needs the stringent process conditions of 0.5-1GPa high pressure, therefore very high to growth apparatus requirement,
High pressure high temperature growth equipment must be used, and the crystal quality of this method growth is poor, complete single crystal size is smaller.
Current preparation method, including mechanical stripping, CVD method of GeP nano thin-film etc., the nanometer of mechanical stripping method preparation
Film dimensions are smaller, are only suitable for making micro-nano device, are not suitable for the saturated absorption mirror for preparing large area；Although CVD method can
To prepare large area film, but there are a large amount of crystal boundary and defect, crystal quality is relatively poor.
Summary of the invention
The present invention is mentioned for deficiency existing for existing GeP body blocks crystal growth and two-dimensional layer film preparing technology
For a kind of preparation method that can obtain large-size high-quality GeP body block monocrystalline and two-dimensional layer nano thin-film, and its in phototube
Application in terms of part.
The preparation method of two-dimensional layer GeP nanometer monocrystalline film of the present invention, comprising the following steps:
(1) Ge, P and Bi are weighed according to the ratio of molar ratio Ge:P:Bi=1:2~5:2~5, is fitted into quartz ampoule and mixes
Uniformly, tube sealing is sintered after vacuumizing to quartz ampoule, wherein Bi is metal fusing agent
The vacuum degree that the quartz ampoule vacuumizes is to 3~5 × 10-4Pa。
(2) the quartz ampoule stage equipped with raw material is heated up, so that the abundant combination reaction of Ge and P；
The interim heating, is warming up to 350~450 DEG C, constant temperature 30~50 hours for 15~20 hours first；20 then~
It is warming up within 30 hours 800~1000 DEG C, constant temperature 20~30 hours, so that the abundant combination reaction of Ge and P；It can avoid quartz ampoule in this way
Explosion.
(3) 600~700 DEG C then were cooled to through 100~200 hours, quartz ampoule is centrifugated, obtain growth
GeP monocrystalline is separated with metal fusing agent Bi, obtains GeP body block monocrystalline；
(4) GeP body block monocrystalline is taken out, is placed in dilute hydrochloric acid (mass fraction is lower than 20% hydrochloric acid, takes 10-20%), removes
Then attachment removal is cleaned up in the fluxing agent Bi on surface with deionized water, obtain GeP body block crystal；
Obtained GeP body block single crystal size is 2~5 × 5~15 × 1~2mm3。
(5) GeP body block monocrystalline is put into the centrifuge tube equipped with dehydrated alcohol, is ultrasonically treated, obtains containing GeP nanometer thin
The alcohol suspending liquid of film；
The frequency of the ultrasonic treatment is 40Hz, and ultrasonic time is 0.5~4 hour.
(6) it by resulting alcohol suspending liquid centrifugal treating, obtains with Tyndall effect supernatant；
The centrifugation is centrifuged 30 minutes with the revolving speed of 4000rpm.
(7) GeP supernatant is taken out, is diluted with ethyl alcohol, obtains the weak solution of GeP nano thin-film；Weak solution drips to lining
On bottom, after volatile dry, two-dimensional layer GeP nanometer monocrystalline film is formed.
The volume ratio of the GeP supernatant and ethyl alcohol is 1:10~15.
GeP nano thin-film with a thickness of 0.5~10nm, band gap 0.43-1.58eV in the solution.
The two-dimensional layer GeP nanometer monocrystalline film of above method preparation, has following purposes:
1. carrying out passive Q-adjusted or mode locking to laser for saturated absorbing body to modulate, the defeated of 1-3 μm of ultra-short pulse laser is realized
Out.
2. for making photon or opto-electronic device, catalysis and lithium cell cathode material.
The present invention grown 2~5 × 5 by the control to various crystal growth parameters as fluxing agent using metal Bi
~15 × 1~2mm3Large scale, high quality GeP body block monocrystalline, the single layer GeP nano thin-film of preparation is that direct band gap is partly led
The GeP of body, band gap about 1.58eV, two layers and the above thickness is indirect band-gap semiconductor, and the band gap of body block GeP is 0.43eV, because
This, can realize that its band gap regulates and controls within the scope of 0.43-1.58eV, to realize infrared by changing GeP nano film thickness
Band broadband Laser Modulation can be used for adjusting Q and mode-locked laser, and be realize to adjust Q and mode-locked laser using simple GeP, and
It is not the compound using prior art organic matter and GeP, obtains higher pulse peak power and pulse energy.In addition,
It can be used for opto-electronic device, radiation detector, catalysis and lithium ion battery negative material etc..
Detailed description of the invention
Fig. 1 is the large scale GeP body block monocrystalline material object picture that the present invention is grown.
Fig. 2 is the structure chart for the two-dimensional layer GeP nano thin-film that the present invention is grown.
Fig. 3 is the AFM picture for the GeP nano thin-film that the present invention is removed by ultrasonic liquid-phase.
Fig. 4 is the schematic diagram to the experiment of GeP saturable absorber passively Q switched laser.
Fig. 5 is 1-3 microns of GeP saturable absorber passive Q-adjusted the performance test results schematic diagrames prepared by the present invention.Its
In: (a), (b), (c) be respectively 1 micron, 2 microns, 3 mum lasers pump lower pulsewidth and repetition with the change of pumping light power
Change；(d), (e), (f) be respectively 1 micron, 2 microns, 3 mum lasers pump lower single pulse energy and peak power with pump light
The variation of power.
Specific embodiment
Embodiment 1
(1) Ge, P and Bi are weighed according to the ratio of molar ratio Ge:P:Bi=1:2:2, wherein Bi is metal fusing agent, then
The raw material of precise is fitted into quartz ampoule and is uniformly mixed, is evacuated to 3 × 10-4The vacuum degree of Pa is sintered tube sealing；
(2) quartz ampoule equipped with raw material is put into resistance furnace, to avoid quartz ampoule from exploding, using stage heating journey
Sequence was first warming up to 350 DEG C, constant temperature 30 hours with 15 hours；Again with being warming up within 20 hours 800 DEG C, constant temperature 20 hours so that Ge and
The abundant combination reaction of P；
(3) 600 DEG C then were cooled to through 100 hours, GeP is nucleated and gradually grows up in the process；Crystal growth terminates,
Quartz ampoule is taken out and is centrifugated from burner hearth rapidly at high temperature, the GeP monocrystalline and metal fusing agent Bi for obtaining growth
Separation, obtains the GeP body block monocrystalline of larger size.
(4) it breaks quartz ampoule into pieces, takes out and contain GeP body block monocrystalline material block, it is attached to place it in the removing of 10-20% diluted hydrochloric acid dissolution
The surface GeP Bi fluxing agent, then cleaned up with deionized water, obtain silvery white sheet GeP body block crystal, size 2
~5 × 5~15 × 1~2mm3.It is in kind as shown in Figure 1.
(5) the GeP body block monocrystalline for choosing high quality, puts it into the centrifuge tube equipped with dehydrated alcohol, in frequency 40Hz
Lower ultrasonic 0.5 hour, obtain the alcohol suspending liquid containing GeP nano thin-film；
(6) then resulting suspension is put into a centrifuge, 30min is centrifuged with the revolving speed of 4000rpm, is obtained with fourth
Da Er effect supernatant；
(7) GeP supernatant is taken out, is diluted, is obtained with a thickness of 0.5~10nm's according to the ratio of 1:10 with ethyl alcohol
The weak solution of GeP nano thin-film.Contain nanometer sheet in dilute solution, drip on substrate, after volatile dry, GeP nano thin-film is just
It forms.
Fig. 2 gives the crystal structure of the two-dimensional layer GeP nano thin-film of the present embodiment growth, and Fig. 3 gives GeP nanometers
The AFM photo of film, test GeP nanometer sheet thickness is about 4nm.Two-dimensional layer GeP nano film thickness manufactured in the present embodiment
Range is 0.5~10nm, and band gap is within the scope of 0.43-1.58eV.
Two-dimensional layer GeP nano thin-film manufactured in the present embodiment can be fabricated to saturable absorber.As shown in figure 4, carrying out
Passively Q switched laser experiment sets gradually pumping source, coupled system, input mirror, gain media, GeP saturated absorbing body and output
Mirror.
Fig. 5 gives the passive Q-adjusted the performance test results of GeP saturable absorber 1-3 mum laser.(a), (b), (c) point
Not Wei 1 micron, 2 microns, 3 mum lasers pump lower pulsewidth and repetition with the variation of pumping light power；(d), (e), (f) difference
Lower single pulse energy and peak power are pumped with the variation of pumping light power for 1 micron, 2 microns, 3 mum lasers.
Two-dimensional layer GeP nano thin-film manufactured in the present embodiment can also be used in make opto-electronic device, radiation detector and
Lithium ion battery negative material etc..
Embodiment 2
(1) Ge, P and Bi are weighed according to the ratio of molar ratio Ge:P:Bi=1:5:5, wherein Bi is metal fusing agent, then
The raw material of precise is fitted into quartz ampoule and is uniformly mixed, is evacuated to 5 × 10-4The vacuum degree of Pa is sintered tube sealing；
(2) quartz ampoule equipped with raw material is put into resistance furnace, to avoid quartz ampoule from exploding, using stage heating journey
Sequence is first warming up to 450 DEG C, constant temperature 50 hours for 20 hours；It is warming up within 30 hours 1000 DEG C again, constant temperature 30 hours, so that Ge and P fill
Divide combination reaction；
(3) 700 DEG C then were cooled to through 200 hours, GeP is nucleated and gradually grows up in the process；Crystal growth terminates,
Quartz ampoule is taken out and is centrifugated from burner hearth rapidly at high temperature, the GeP monocrystalline and metal fusing agent Bi for obtaining growth
Separation, obtains the GeP body block monocrystalline of larger size, 2~5 × 5~15 × 1~2mm of size3；
(4) it takes out after breaking quartz ampoule into pieces containing GeP body block monocrystalline material block, places it in dissolution in 10-20% dilute hydrochloric acid and remove
Then attachment removal is cleaned up in the Bi fluxing agent on the surface GeP with deionized water, obtain silvery white sheet GeP crystal；
(5) the GeP body block monocrystalline for choosing high quality, puts it into the centrifuge tube equipped with dehydrated alcohol, in frequency 40Hz
Lower ultrasonic 2 hours, obtain the alcohol suspending liquid containing GeP nano thin-film；
(6) then resulting suspension is put into a centrifuge, 30min is centrifuged with the revolving speed of 4000rpm, is obtained with fourth
Da Er effect supernatant；
(7) GeP supernatant is taken out, is diluted with ethyl alcohol according to the ratio of 1:12, obtains the dilute molten of GeP nano thin-film
Liquid,
Two-dimensional layer GeP nano film thickness range manufactured in the present embodiment is 0.5~10nm, and band gap is in 0.43-
1.58eV in range.The modulation of passive Q-adjusted or mode locking is carried out to 1-3 μm infrared broadband ultra-short pulse laser, performance is equally good,
It can get high pulse peak power and pulse energy.
Embodiment 3
(1) Ge, P and Bi are weighed according to the ratio of molar ratio Ge:P:Bi=1:3:3, wherein Bi is metal fusing agent, then
The raw material of precise is fitted into quartz ampoule and is uniformly mixed, is evacuated to 4 × 10-4The vacuum degree of Pa is sintered tube sealing；
(2) quartz ampoule equipped with raw material is put into resistance furnace, to avoid quartz ampoule from exploding, using stage heating journey
Sequence is warming up to 400 DEG C, constant temperature 40 hours for 18 hours；Then with being warming up within 25 hours 900 DEG C, constant temperature 30 hours, so that Ge and P
Abundant combination reaction；
(3) 650 DEG C then were cooled to through 150 hours, GeP is nucleated and gradually grows up in the process；Crystal growth terminates,
Quartz ampoule is taken out and is centrifugated from burner hearth rapidly at high temperature, the GeP monocrystalline and metal fusing agent Bi for obtaining growth
Separation, obtains the GeP body block monocrystalline of larger size, 2~5 × 5~15 × 1~2mm of size3；
(4) it takes out after breaking quartz ampoule into pieces containing GeP body block monocrystalline material block, places it in the removing of 10-20% diluted hydrochloric acid dissolution
It is attached to the Bi fluxing agent on the surface GeP, is then cleaned up with deionized water, silvery white sheet GeP crystal is obtained；
(5) the GeP body block monocrystalline for choosing high quality, puts it into the centrifuge tube equipped with dehydrated alcohol, in frequency 40Hz
Lower ultrasonic 2 hours, obtain the alcohol suspending liquid containing GeP nano thin-film；
(6) then resulting suspension is put into a centrifuge, 30min is centrifuged with the revolving speed of 4000rpm, is obtained with fourth
Da Er effect supernatant；
(7) GeP supernatant is taken out, is diluted with ethyl alcohol according to the ratio of 1:15, obtains the dilute molten of GeP nano thin-film
Liquid；It drips on substrate, volatile dry, forms GeP nano thin-film.
The present embodiment equally prepares the two-dimensional layer GeP nano thin-film of 0.5~10nm thickness, and band gap is in 0.43-
1.58eV in range.The modulation of passive Q-adjusted or mode locking is carried out to 1-3 μm infrared broadband ultra-short pulse laser, performance is equally good,
It can get high pulse peak power and pulse energy.
Claims (10)
1. a kind of preparation method of two-dimensional layer GeP nanometer monocrystalline film, it is characterized in that: the following steps are included:
(1) Ge, P and Bi are weighed according to the ratio of molar ratio Ge:P:Bi=1:2~5:2~5, are fitted into quartz ampoule and are uniformly mixed,
Tube sealing is sintered after vacuumizing to quartz ampoule, wherein Bi is metal fusing agent；
(2) the quartz ampoule stage equipped with raw material is heated up, so that the abundant combination reaction of Ge and P；
(3) 600~700 DEG C then were cooled to through 100~200 hours, quartz ampoule is centrifugated, the GeP for obtaining growth is mono-
Crystalline substance is separated with metal fusing agent Bi, obtains GeP body block monocrystalline；
(4) GeP body block monocrystalline is taken out, is placed in dilute hydrochloric acid (mass fraction is lower than 20% hydrochloric acid, takes 10-20%), removes attached
Surface fluxing agent Bi, then cleaned up with deionized water, obtain GeP body block crystal；
(5) GeP body block monocrystalline is put into the centrifuge tube equipped with dehydrated alcohol, is ultrasonically treated, obtains containing GeP nano thin-film
Alcohol suspending liquid；
(6) by resulting alcohol suspending liquid centrifugal treating, supernatant is obtained；
(7) GeP supernatant is taken out, is diluted with ethyl alcohol, obtains the weak solution of GeP nano thin-film；Weak solution drips on substrate,
After volatile dry, two-dimensional layer GeP nanometer monocrystalline film is formed.
2. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(1) vacuum degree that quartz ampoule vacuumizes in is to 3~5 × 10-4Pa。
3. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(2) interim heating, is warming up to 350~450 DEG C, constant temperature 30~50 hours for 15~20 hours first in；Then 20~30 hours
It is warming up to 800~1000 DEG C, constant temperature 20~30 hours, so that the abundant combination reaction of Ge and P.
4. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(4) GeP body block single crystal size obtained in is 2~5 × 5~15 × 1~2mm3。
5. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(5) frequency being ultrasonically treated in is 40Hz, and ultrasonic time is 0.5~4 hour.
6. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(6) centrifugation is centrifuged 30 minutes with the revolving speed of 4000rpm in.
7. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(7) volume ratio of GeP supernatant and ethyl alcohol is 1:10~15 in.
8. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(7) two-dimensional layer GeP nanometer monocrystalline film with a thickness of 0.5~10nm in.
9. the preparation method of two-dimensional layer GeP nanometer monocrystalline film according to claim 1, it is characterized in that: the step
(7) band gap of two-dimensional layer GeP nanometer monocrystalline film is 0.43-1.58eV in.
10. the two-dimensional layer GeP nanometer monocrystalline film of claim 1-9 the method preparation, for saturated absorbing body to laser
The modulation of passive Q-adjusted or mode locking is carried out, realizes the output of 1-3 μm infrared broadband ultra-short pulse laser；And for making photon
Or opto-electronic device, catalysis and lithium cell cathode material.
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| WO2021189874A1 (en) * | 2020-03-25 | 2021-09-30 | 深圳先进技术研究院 | Method for regulating growth of sip crystal |
| CN113753870A (en) * | 2021-09-30 | 2021-12-07 | 海南大学 | GeP nanosheet negative electrode for lithium ion battery and ultrasonic-assisted rapid stripping preparation method thereof |
| CN113753870B (en) * | 2021-09-30 | 2023-05-26 | 海南大学 | GeP nano-sheet negative electrode for lithium ion battery and ultrasonic-assisted rapid stripping preparation method thereof |
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