CN110417357A - A kind of integrated Doherty amplifier of compact - Google Patents
A kind of integrated Doherty amplifier of compact Download PDFInfo
- Publication number
- CN110417357A CN110417357A CN201810385233.6A CN201810385233A CN110417357A CN 110417357 A CN110417357 A CN 110417357A CN 201810385233 A CN201810385233 A CN 201810385233A CN 110417357 A CN110417357 A CN 110417357A
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- Prior art keywords
- amplifier
- output
- doherty
- balance
- high resistant
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of compacts to integrate Doherty amplifier, it include: input, output, main amplifier, and at least one auxiliary amplifier, the output node of the main amplifier is connect by high resistant transformation line with the output node of auxiliary amplifier, and the high resistant transformation line is also connected with parasitic parameter balance network, using the output node of auxiliary amplifier as output.The matching element of Doherty circuit can be largely reduced, area is saved, is easily integrated, and the loss of entire circuit can be reduced, promotes the performance of Doherty circuit.
Description
Technical field
The present invention relates to a kind of integrated Doherty amplifiers, integrate Doherty amplifier more particularly to a kind of compact.
Background technique
The power amplifier nucleus module one of important as radio-frequency front-end in wireless communication system, to communication system
Overall performance has vital influence.With the development of wireless communication, the demand that system quickly transmits data is increasingly
Greatly, this will use more complicated modulation system, and then require signal of communication peak-to-average ratio with higher, therefore to power
More stringent requirements are proposed for the linearity of amplifier.In practical applications, it is right to meet its to generally use the method for back-off
The requirement of the linearity, but significantly efficiency will be so sacrificed, the operation cost of wireless communication is not only increased, it can also be because dissipating
The unstability of the problems such as hot deterioration system.Therefore under the conditions of meeting the required linearity, how power amplifier is improved
Efficiency becomes the emphasis of current power-amplification development.In addition increasing with power amplifier quantity, the miniaturization to power amplifier, integrated level
More stringent requirements are proposed,
Doherty (Doherty) amplifier technique has structure simple, easy to accomplish, especially can be the back-off the case where
The advantages of lower holding high level efficiency, balance preferably can be obtained in efficiency and the linearity.But cost is: Doherty amplification
The exploitation of device needs point-device design.The component for including in Doherty amplifier electrical parameter (for example, ceramic capacitor and
Its position on printed circuit board (PCB)) it must be next smart with the tolerance more much smaller than tolerance needed for conventional power amplifier
Determine justice.Further, since mechanical tolerance so that the ground connection contact of main and the encapsulation of peak grade and its PCB input microchip with
Position between output microchip cannot precisely enough reappear, and the phase increased between the two amplification branches is inconsistent
Property.The precision of Doherty amplifier parameter value is adversely affected as a result, this causes production yield to be lower.
For the performance for guaranteeing doherty circuit, to circuit, there are certain requirements: accurate input power control, output
Power traction, and it is supplied to the control of the amplitude and phase of the input signal of main and peak grade.
Traditional Doherty amplifier is more due to participating in matched element, causes circuit area big, it is not easy to and it is integrated,
And loss is also big.Doherty amplifier framework as shown in Figure 1, this framework have the disadvantage in that
1, there is no reactance compensation network, so can only be used in the case where impedance is met certain condition, greatly reduce it and answer
Use range.
2, the use of separate inductor, area is big, and consistency is relatively poor.
3, input does not have phase-fitting network, influences Doherty synthetic effect.It will cause AMAM curve in certain bandwidth
Deteriorate.
Summary of the invention
In view of the above technical problems, it is an object of that present invention to provide a kind of compacts to integrate Doherty amplifier, can be very
The matching element for reducing to big degree Doherty circuit, saves area, is easily integrated, and can reduce the damage of entire circuit
Consumption promotes the performance of Doherty circuit.
In order to solve these problems in the prior art, present invention provide the technical scheme that
A kind of integrated Doherty amplifier of compact, comprising:
The output node of input, output, main amplifier and at least one auxiliary amplifier, the main amplifier is converted by high resistant
Line is connect with the output node of auxiliary amplifier, and the high resistant transformation line is also connected with parasitic parameter balance network, by auxiliary amplifier
Output node is as output.
In preferred technical solution, the parasitic parameter balance network include balance inductance and with balance inductance is concatenated connects
Ground balancing capacitance.
In preferred technical solution, the high resistant transformation line includes the inductance of two series connections, and the parasitic parameter is flat
Weighing apparatus network connection is in the connecting node of two inductance.
In preferred technical solution, the input is located on the first substrate, the main amplifier, high resistant transformation line and auxiliary
Amplifier is integrated on the second substrate, and the parasitic parameter balance network and output impedance transformation line are located on third substrate.
In preferred technical solution, the input, main amplifier, high resistant transformation line and auxiliary amplifier, parasitic parameter balance
Network and output impedance transformation line are integrated on same active substrates.
In preferred technical solution, the output node of the auxiliary amplifier connects output impedance converter (AIT) conduct afterwards
Output.
Scheme in compared with the existing technology, the invention has the advantages that
1, main amplifier and auxiliary amplifier are connected directly using high resistant transformation line (HIL) and balance network together by parasitic parameter
Absorbing crystal pipe parasitic parameter can largely reduce the matching element of Doherty circuit, save area, be easily integrated,
And the loss of entire circuit can be reduced, promote the performance of Doherty circuit.
2, the phase song that phase matching network (PMN) can be fitted output can be set in input in this kind of Doherty amplifier
Line so that combining AMAM characteristic improves, and is suitble to broadband application.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the circuit framework figure of existing Doherty amplifier；
Fig. 2 is the Doherty amplifier functional block diagram of present pre-ferred embodiments；
Fig. 3 is the Doherty amplifier functional block diagram of another embodiment of the present invention；
Fig. 4 is a kind of design example of Doherty amplifier of the present invention；
Fig. 5 is another Doherty amplifier functional block diagram of the present invention；
Fig. 6 is another design example of Doherty amplifier of the present invention.
Specific embodiment
Above scheme is described further below in conjunction with specific embodiment.It should be understood that these embodiments are for illustrating
The present invention and be not limited to limit the scope of the invention.Implementation condition used in the examples can be done according to the condition of specific producer
Further adjustment, the implementation condition being not specified is usually the condition in routine experiment.
Embodiment 1:
As shown in Fig. 2, a kind of compact integrates Doherty amplifier, comprising: input (RF in) exports (RF out), main amplification
A device M and auxiliary amplifier P, naturally it is also possible to be extended to multiple auxiliary amplifiers, principle is identical, here only with an auxiliary amplification
Device is specifically described, and the output node of main amplifier M passes through high resistant transformation line (high resistant delay line) HIL's and auxiliary amplifier P
Output node connection, high resistant transformation line is also connected with parasitic parameter balance network 100, such as can take out in the intermediate of high resistant transformation line
Head Tc connection parasitic parameter balances network 100, and the output node connection output impedance transformation line AIT of auxiliary amplifier P is as output
(RF out).
Parasitic parameter balance network 100 include balance inductance and with the concatenated earth balance capacitor of balance inductance.High resistive
The balance inductance Lb of the centre tap Tc connection parasitic parameter balance network 100 of thread-changing, the other end of balance inductance Lb and ground connection
Balancing capacitance Cb formed series circuit.
Parasitic parameter is balanced the balance inductance Lb in network and can be realized using bond-wire inductor or using plane electricity
Sense substitutes realization by distributed high resistant line, here without limitation.
High resistant transformation line (high resistant delay line) HIL for connecting main amplifier M and auxiliary amplifier P can be by two series inductances
Ls1 and Ls2 is realized, as shown in figure 3, using the connecting node of inductance Ls1 and Ls2 as centre tap Tc.
As output after the output node connection output impedance transformation line AIT of auxiliary amplifier P.The characteristic of impedance transformer hinders
Anti- selection can be chosen by main road and bypass symmetry principle, can also choose by main road and the asymmetric principle of bypass.Output
Impedance transformation line AIT is used to the doherty impedance being combined transforming to certain numerical value, for example, 50Ohm.
Lb, Cb and main amplifier of high resistant transformation line HIL and parasitic parameter balance network and the parasitic of auxiliary amplifier are joined
Number collectively forms Doherty phase inverter, plays the role of high resistant in Doherty circuit and draws.High resistant traction principle according to
Following formula:
N is coefficient, impedance when Ropt is transistor best output performance,X L For load reactance.It is efficient same in order to obtain
When take into account bandwidth and linear, choose suitable m value, such as 2 < m < 4.To obtain n andX L Value.Further according to n andX L Value and
The value of the parasitic parameter of main amplifier and auxiliary amplifier calculates the impedance and phase, parasitic parameter balance of high resistant transformation line HIL
The value of inductance Lb and capacitor Cb in network.
It inputs (RF in) and connects power distributing unit PD, two output ends of power distributing unit PD are defeated with main road respectively
Enter matching network IMM to be connected with the input terminal of bypass input matching network IMP, distributes power to two branch of main road and bypass
Road.Main input matching network IMM output end is connected with main transistor M, forms impedance matching.Bypass input matching network IMP
Output end and the input terminal of phase equalizing network PBN be connected to form impedance matching, the output end of phase equalizing network PBN with it is auxiliary
While the input terminal of transistor is connected to form impedance matching, balanced phase shift is realized.
As shown in figure 4, input passive integrated devices (IPD1) and output passive integrated devices (IPD2) are integrated in low cost
Base substrate on, such as GaAs, High Resistivity Si, PCB, potsherd etc..Main amplifier, high resistant transformation line and auxiliary amplifier are integrated in
On active substrates, such as GaN, GaAs, LDMOS etc., formed monolithic integrated optical circuit (MMIC).
Integrated passive devices (IPD1, IPD2) and monolithic integrated optical circuit (MMIC) are mounted on heatsink flange (Flange) together
On.Input terminal is connected by bonding line BW1 with the external world, and output end is connected by bonding line BW4 with the external world.Input passive integration electricity
Road IPD1 is connected by bonding line BW2 with monolithic integrated optical circuit MMIC, output passive integrated circuit IPD2 pass through BW3 and BW5 and
Monolithic integrated optical circuit MMIC is connected.
Embodiment 2:
As shown in Figure 5,6, by all circuit integrations on the same active substrates, including input, main amplifier, high resistant transformation
Circuit in line and auxiliary amplifier, parasitic parameter balance network and output, active substrates such as GaN, GaAs, LDMOS etc. are formed
Monolithic integrated optical circuit (MMIC).MMIC is mounted on flange, and input terminal is connected by the external world bonding line BW1, and output end passes through key
Zygonema BW2 is connected with the external world.
The assembling mode of framework of the present invention can use i-Module form.Conventional package form can also be used, such as
Ceramics, OMP, vacuum plastic etc..
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (6)
1. a kind of compact integrates Doherty amplifier, comprising:
Input, output, main amplifier and at least one auxiliary amplifier, which is characterized in that the output node of the main amplifier is logical
Excessively high resistive thread-changing is connect with the output node of auxiliary amplifier, and the high resistant transformation line is also connected with parasitic parameter balance network, will
The output node of auxiliary amplifier is as output.
2. compact according to claim 1 integrates Doherty amplifier, which is characterized in that the parasitic parameter balance net
Network include balance inductance and with the concatenated earth balance capacitor of balance inductance.
3. compact according to claim 1 or 2 integrates Doherty amplifier, which is characterized in that the high resistant transformation line
The inductance being connected in series including two, the parasitic parameter balance network are connected to the connecting node of two inductance.
4. compact according to claim 1-3 integrates Doherty amplifier, which is characterized in that the input bit
In on the first substrate, the main amplifier, high resistant transformation line and auxiliary amplifier are integrated on the second substrate, the parasitic parameter
It balances network and output is located on third substrate.
5. compact according to claim 1-3 integrates Doherty amplifier, which is characterized in that the input,
Main amplifier, high resistant transformation line and auxiliary amplifier, parasitic parameter balance network and output are integrated on same active substrates.
6. compact according to claim 1 integrates Doherty amplifier, which is characterized in that the output of the auxiliary amplifier
Node connects impedance transformer (AIT) afterwards as output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810385233.6A CN110417357B (en) | 2018-04-26 | 2018-04-26 | Compact integrated doherty amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810385233.6A CN110417357B (en) | 2018-04-26 | 2018-04-26 | Compact integrated doherty amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110417357A true CN110417357A (en) | 2019-11-05 |
| CN110417357B CN110417357B (en) | 2023-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810385233.6A Active CN110417357B (en) | 2018-04-26 | 2018-04-26 | Compact integrated doherty amplifier |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| EP4340219A1 (en) * | 2022-08-18 | 2024-03-20 | NXP USA, Inc. | Doherty amplifiers |
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| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| CN102414985A (en) * | 2009-04-30 | 2012-04-11 | 飞思卡尔半导体公司 | Wireless communication device and semiconductor package device having a power amplifier therefor |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| CN107332518A (en) * | 2017-06-28 | 2017-11-07 | 苏州远创达科技有限公司 | A kind of broadband Doherty power amplifier |
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2018
- 2018-04-26 CN CN201810385233.6A patent/CN110417357B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005303771A (en) * | 2004-04-14 | 2005-10-27 | Mitsubishi Electric Corp | High frequency power amplifier |
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| CN102414985A (en) * | 2009-04-30 | 2012-04-11 | 飞思卡尔半导体公司 | Wireless communication device and semiconductor package device having a power amplifier therefor |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| CN107332518A (en) * | 2017-06-28 | 2017-11-07 | 苏州远创达科技有限公司 | A kind of broadband Doherty power amplifier |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| WO2021212818A1 (en) * | 2020-04-24 | 2021-10-28 | 苏州远创达科技有限公司 | Broadband doherty amplifier |
| EP4340219A1 (en) * | 2022-08-18 | 2024-03-20 | NXP USA, Inc. | Doherty amplifiers |
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| Publication number | Publication date |
|---|---|
| CN110417357B (en) | 2023-06-27 |
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