CN110417356A - A kind of broadband high-efficiency Doherty amplifier - Google Patents
A kind of broadband high-efficiency Doherty amplifier Download PDFInfo
- Publication number
- CN110417356A CN110417356A CN201810384881.XA CN201810384881A CN110417356A CN 110417356 A CN110417356 A CN 110417356A CN 201810384881 A CN201810384881 A CN 201810384881A CN 110417356 A CN110417356 A CN 110417356A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- network
- broadband high
- output
- transmission line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003071 parasitic effect Effects 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of broadband high-efficiency Doherty amplifiers, it include: input, output, main amplifier, and at least one auxiliary amplifier, the output node of the main amplifier are connect by broadband high resistant converting network with the output node of auxiliary amplifier, the output node connection main road parasitic parameter of the main amplifier balances network, the output node connection bypass parasitic parameter of the auxiliary amplifier balances network, using the output node of auxiliary amplifier as output.Guarantee high efficiency while effectively promoting its broadband performance.
Description
Technical field
The present invention relates to a kind of Doherty amplifiers, more particularly to a kind of broadband high-efficiency Doherty amplifier.
Background technique
The power amplifier nucleus module one of important as radio-frequency front-end in wireless communication system, to communication system
Overall performance has vital influence.With the development of wireless communication, the demand that system quickly transmits data is increasingly
Greatly, this will use more complicated modulation system, and then require signal of communication peak-to-average ratio with higher, therefore to power
More stringent requirements are proposed for the linearity of amplifier.In practical applications, it is right to meet its to generally use the method for back-off
The requirement of the linearity, but significantly efficiency will be so sacrificed, the operation cost of wireless communication is not only increased, it can also be because dissipating
The unstability of the problems such as hot deterioration system.Therefore under the conditions of meeting the required linearity, how power amplifier is improved
Efficiency becomes the emphasis of current power-amplification development.In addition increasing with power amplifier quantity, the miniaturization to power amplifier, integrated level
More stringent requirements are proposed.
Existing high efficiency power amplifier mostly uses conventional Doherty (Doherty) circuit structure to realize high efficiency, but
Since there are narrowband devices as the impedance transformation line of λ/4 in its circuit structure, cause traditional Doherty structure available bandwidth
It is limited.Transoid Doherty is an effective means for effectively widening power amplifier bandwidth, but the use of the technology needs matching in power tube
Cooperation, not each device is suitable for the technology.Therefore, it is necessary to redesign Donherty circuit structure, to improve it
Bandwidth.
Summary of the invention
In view of the above technical problems, it is an object of that present invention to provide a kind of broadband high-efficiency Doherty amplifier, guaranteeing
High efficiency effectively promotes its broadband performance simultaneously.
In order to solve these problems in the prior art, present invention provide the technical scheme that
A kind of broadband high-efficiency Doherty amplifier, comprising:
The output node of input, output, main amplifier and at least one auxiliary amplifier, the main amplifier passes through broadband high resistant
Converting network is connect with the output node of auxiliary amplifier, and the output node of the main amplifier connects main road parasitic parameter balance net
The output node connection bypass parasitic parameter of network, the auxiliary amplifier balances network, using the output node of auxiliary amplifier as defeated
Out.
In preferred technical solution, the parasitic parameter balance network include balance inductance and with balance inductance is concatenated connects
Ground balancing capacitance.
In preferred technical solution, the broadband high resistant converting network includes the transmission line that four rings connect, first transmission line
It is connect with the output node of the connecting node of second transmission line and main amplifier, the connection section of second transmission line and third transmission line
Point is connect with the output node of auxiliary amplifier, and third transmission line connect the second ground capacity with the connecting node of the 4th transmission line,
The connecting node of 4th transmission line and first transmission line connects the first ground capacity.
In preferred technical solution, the transmission line of the broadband high resistant converting network replaces with inductance.
In preferred technical solution, the input is located on the first substrate, and the main amplifier and auxiliary amplifier are integrated in
On second substrate, the broadband high resistant converting network, main road parasitic parameter balance network, bypass parasitic parameter balance network and
Output is located on third substrate.
In preferred technical solution, the input, main amplifier, broadband high resistant converting network and auxiliary amplifier, main road are posted
Raw parameter balance network, bypass parasitic parameter balance network and output are integrated on same active substrates.
In preferred technical solution, the output node of the auxiliary amplifier connects asymmetric impedance transformer (AIT) and makees afterwards
For output.
Scheme in compared with the existing technology, the invention has the advantages that
1, main amplifier and auxiliary route amplifier use high resistant converting network in broadband to be connected directly simultaneously absorbing crystal pipe parasitic parameter.
Structure is simple, and loss is low, is highly susceptible to integrating.
2, while high resistant converting network in broadband can realize impedance transformation in big bandwidth, phase is made to meet Doherty
Job requirement.Efficiency operation point can be provided in broadband range.
3, the framework is easy to extend to multichannel Doherty, and layout is simple, it is easy to accomplish.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the Doherty amplifier functional block diagram of present pre-ferred embodiments；
Fig. 2 is the Doherty amplifier functional block diagram of another embodiment of the present invention；
Fig. 3 is the Doherty amplifier functional block diagram of further embodiment of this invention；
Fig. 4 is the Doherty amplifier functional block diagram of yet another embodiment of the invention；
Fig. 5 is bandwidth product figure of the present invention；
Fig. 6 is a kind of design principle block diagram of Doherty amplifier of the present invention；
Fig. 7 is a kind of design example of Fig. 6；
Fig. 8 is the design principle block diagram of another Doherty amplifier of the present invention；
Fig. 9 is a kind of design example of Fig. 8.
Specific embodiment
Above scheme is described further below in conjunction with specific embodiment.It should be understood that these embodiments are for illustrating
The present invention and be not limited to limit the scope of the invention.Implementation condition used in the examples can be done according to the condition of specific producer
Further adjustment, the implementation condition being not specified is usually the condition in routine experiment.
Embodiment 1:
As shown in Figure 1, a kind of broadband high-efficiency Doherty amplifier, comprising: input (RF in) exports (RF out), main amplification
A device M and auxiliary amplifier P.The output node of main amplifier M is defeated by broadband high resistant converting network 20 and auxiliary amplifier P's
The output node connection main road parasitic parameter of egress connection, main amplifier M balances network 10, the output node of auxiliary amplifier P
It connects bypass parasitic parameter and balances network 30, using the output node of auxiliary amplifier P as output (RF out).
The broadband high-efficiency Doherty amplifier may include multiple auxiliary amplifiers, as shown in Fig. 2, main amplifier M's is defeated
Egress is connect by the first broadband high resistant converting network 20 with the output node of the first auxiliary amplifier P-1, the first auxiliary amplifier
The output node of P-1 is connect by the second broadband high resistant converting network with the output node of the second auxiliary amplifier P-2, with such
It pushes away, the output node of the auxiliary amplifier P-N-1 of N-1 passes through the defeated of the auxiliary amplifier P-N of the broadband N high resistant converting network 21 and N
Egress connection, each auxiliary amplifier connection bypass parasitic parameter balance network.
Parasitic parameter balance network include balance inductance and with the concatenated earth balance capacitor of balance inductance.Main amplifier M
Output node connection main road parasitic parameter balance network 10 balance inductance Lsm, the other end of balance inductance Lsm and ground connection
Balancing capacitance Csm forms series circuit.The balance electricity of the output node connection bypass parasitic parameter balance network 30 of auxiliary amplifier P
Feel Lsp, the other end of balance inductance Lsp and the balancing capacitance Csp of ground connection form series circuit.
Parasitic parameter balance network in balance inductance can also be realized by distributed transmission line, as shown in Figure 3.
The transmission line that broadband high resistant converting network 20 connects including four rings, four transmission lines TL1, TL2, TL3, TL4,
Join end to end and to form ring and connect circuit, the connecting node P1 of transmission line TL1 and TL2 as high resistant converting network a connecting pin with
The output node of main transistor M is connected.A connection of the connecting node P2 of transmission line TL2 and TL3 as high resistant converting network
End is connected with the output node of auxiliary transistor P.One as high resistant converting network of the connecting node P3 of transmission line TL1 and TL4
Connecting pin is connected with the ungrounded end of direct-to-ground capacitance Cb1.The connecting node P4 of transmission line TL3 and TL4 are as high resistant converting network
A connecting pin be connected with the ungrounded end of direct-to-ground capacitance Cb2.
The transmission line that four rings of broadband high resistant converting network 20 connect can also be substituted with inductance, as shown in Figure 4.
The output node of auxiliary amplifier P is used as output after connecting asymmetric impedance transformer AIT.Asymmetric impedance transformer
AIT is used to the doherty impedance being combined transforming to certain numerical value, for example, 50Ohm.
Lsm, Csm and bypass parasitic parameter of broadband high resistant converting network 20 and main road parasitic parameter balance network 10 are flat
Lsp, Csp of weighing apparatus network 30 collectively form Doherty phase inverter, play the role of high resistant in Doherty circuit and draw.High resistant
The principle of traction is according to the following formula:
N is coefficient, impedance when Ropt is transistor best output performance,X L For load reactance.It is efficient same in order to obtain
When take into account bandwidth and linear, choose 2 < m < 4.To obtain n andX L Value.Further according to n andX L Value calculate broadband high resistant transformation
The specific ginseng of the impedance of network 20 and phase, main road parasitic parameter balance inductance Lsm and bypass parasitic parameter balance inductance Lsp
Numerical value.The capacitance of capacitor Csm and Csp choose the drain-source parasitic capacitance with the transistor of main amplifier and the transistor of auxiliary amplifier
For same magnitude.
The effect of high resistant traction in Doherty circuit, realizes the Doherty efficientibility energy in broadband, with others
Single transmission line impedance converter is compared, and the bandwidth product comparison of high resistant traction is as shown in Figure 5.
It inputs (RF in) and connects power distributing unit PD, two output ends of power distributing unit PD are defeated with main road respectively
Enter matching network IMM to be connected with the input terminal of bypass input matching network IMP, distributes power to two branch of main road and bypass
Road.Main input matching network IMM output end is connected with main transistor M, forms impedance matching.Bypass input matching network IMP
Output end and the input terminal of phase equalizing network PBN be connected to form impedance matching, the output end of phase equalizing network PBN with it is auxiliary
While the input terminal of transistor is connected to form impedance matching, balanced phase shift is realized.
The Doherty power amplifier with high efficient broadband can be real using the semiconductor technology mode of microwave integrated circuit
It is existing, it can also be realized by the way of multi-chip hybrid integrated.
As shown in Figure 6,7, by all circuit integrations on the same active substrates, including input, main amplifier, high resistant
Circuit in transformation line and auxiliary amplifier, main road parasitic parameter balance network, bypass parasitic parameter balance network and output, has
Source substrate such as GaN, GaAs, LDMOS etc. are formed monolithic integrated optical circuit (MMIC).MMIC is mounted on flange, and input terminal passes through key
The external world zygonema BW1 is connected, and output end is connected by bonding line BW2 with the external world.
Embodiment 2:
As shown in Figure 8,9, it inputs passive integrated devices (IPD1) and output passive integrated devices (IPD2), broadband high resistant converts net
Network is integrated in the base substrate of low cost, such as GaAs, High Resistivity Si, PCB, potsherd etc..Main amplifier and auxiliary amplifier are integrated
In on active substrates, such as GaN, GaAs, LDMOS etc., formed monolithic integrated optical circuit (MMIC).
Integrated passive devices (IPD1, IPD2) and monolithic integrated optical circuit (MMIC) are mounted on heatsink flange (Flange) together
On.Input terminal is connected by bonding line BW1 with the external world, and output end is connected by bonding line BW4 with the external world.Input passive integration electricity
Road IPD1 is connected by bonding line BW2 with monolithic integrated optical circuit MMIC, and output passive integrated circuit IPD2 passes through BW3 and monolithic collection
It is connected at circuit MMIC.
The assembling mode of framework of the present invention can use i-Module form.Conventional package form can also be used, such as
Ceramics, OMP, vacuum plastic etc..
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (8)
1. a kind of broadband high-efficiency Doherty amplifier, comprising:
Input, output, main amplifier and at least one auxiliary amplifier, which is characterized in that the output node of the main amplifier is logical
It crosses broadband high resistant converting network to connect with the output node of auxiliary amplifier, the output node connection main road of the main amplifier is parasitic
The output node connection bypass parasitic parameter of parameter balance network, the auxiliary amplifier balances network, by the output of auxiliary amplifier
Node is as output.
2. broadband high-efficiency Doherty amplifier according to claim 1, which is characterized in that the parasitic parameter balance net
Network include balance inductance and with the concatenated earth balance capacitor of balance inductance.
3. broadband high-efficiency Doherty amplifier according to claim 1, which is characterized in that the parasitic parameter balance net
The balance inductance of network replaces with transmission line.
4. broadband high-efficiency Doherty amplifier according to claim 1, which is characterized in that the broadband high resistant converts net
Network includes the transmission line that four rings connect, and the output node of the connecting node and main amplifier of first transmission line and second transmission line connects
It connects, second transmission line is connect with the connecting node of third transmission line with the output node of auxiliary amplifier, third transmission line and the 4th
The connecting node of transmission line connects the second ground capacity, the first ground connection of connecting node connection of the 4th transmission line and first transmission line
Capacitor.
5. broadband high-efficiency Doherty amplifier according to claim 4, which is characterized in that the broadband high resistant converts net
The transmission line of network replaces with inductance.
6. broadband high-efficiency Doherty amplifier according to claim 1-5, which is characterized in that the input bit
In on the first substrate, the main amplifier and auxiliary amplifier are integrated on the second substrate, the broadband high resistant converting network, master
Road parasitic parameter balances network, bypass parasitic parameter balance network and output and is located on third substrate.
7. broadband high-efficiency Doherty amplifier according to claim 1-5, which is characterized in that the input,
Main amplifier, broadband high resistant converting network and auxiliary amplifier, main road parasitic parameter balance network, bypass parasitic parameter balance net
Network and output are integrated on same active substrates.
8. broadband high-efficiency Doherty amplifier according to claim 1, which is characterized in that the output of the auxiliary amplifier
Node connects asymmetric impedance transformer (AIT) afterwards as output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810384881.XA CN110417356B (en) | 2018-04-26 | 2018-04-26 | Broadband high-efficiency doherty amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810384881.XA CN110417356B (en) | 2018-04-26 | 2018-04-26 | Broadband high-efficiency doherty amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110417356A true CN110417356A (en) | 2019-11-05 |
| CN110417356B CN110417356B (en) | 2023-07-21 |
Family
ID=68345934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810384881.XA Active CN110417356B (en) | 2018-04-26 | 2018-04-26 | Broadband high-efficiency doherty amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110417356B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| US20120092074A1 (en) * | 2010-10-19 | 2012-04-19 | Samsung Electronics Co. Ltd. | Apparatus and method for a switched capacitor architecure for multi-band doherty power amplifiers |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| US20140035681A1 (en) * | 2012-08-02 | 2014-02-06 | Telefonaktiebolaget L M Ericsson (Publ) | Multi-frequency multi-standard reconfigurable doherty amplifier |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| US20170077873A1 (en) * | 2015-09-16 | 2017-03-16 | Ampleon Netherlands B.V. | Power Amplifier Cell |
| CN106785289A (en) * | 2016-12-26 | 2017-05-31 | 西安电子科技大学 | Gao Gongfen based on three line coupled structures compares broadband power divider |
| US20180026588A1 (en) * | 2015-01-16 | 2018-01-25 | Hitachi Kokusai Electric Inc. | Doherty amplifier and power amplifier |
-
2018
- 2018-04-26 CN CN201810384881.XA patent/CN110417356B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102113207A (en) * | 2008-07-09 | 2011-06-29 | 意法爱立信有限公司 | Doherty amplifier with input network optimized for MMIC |
| US20120092074A1 (en) * | 2010-10-19 | 2012-04-19 | Samsung Electronics Co. Ltd. | Apparatus and method for a switched capacitor architecure for multi-band doherty power amplifiers |
| CN102480272A (en) * | 2010-11-29 | 2012-05-30 | Nxp股份有限公司 | Radiofrequency amplifier |
| CN103023448A (en) * | 2011-09-27 | 2013-04-03 | 英飞凌科技股份有限公司 | RF device with compensatory resonator matching topology |
| US20140035681A1 (en) * | 2012-08-02 | 2014-02-06 | Telefonaktiebolaget L M Ericsson (Publ) | Multi-frequency multi-standard reconfigurable doherty amplifier |
| CN105874706A (en) * | 2014-01-06 | 2016-08-17 | 华为技术有限公司 | Doherty power amplifier, communication device and system |
| CN105048970A (en) * | 2014-04-15 | 2015-11-11 | 恩智浦有限公司 | Ultra wideband doherty amplifier |
| US20180026588A1 (en) * | 2015-01-16 | 2018-01-25 | Hitachi Kokusai Electric Inc. | Doherty amplifier and power amplifier |
| US20170077873A1 (en) * | 2015-09-16 | 2017-03-16 | Ampleon Netherlands B.V. | Power Amplifier Cell |
| CN106992758A (en) * | 2015-09-16 | 2017-07-28 | 安普林荷兰有限公司 | Power amplifier unit |
| CN106785289A (en) * | 2016-12-26 | 2017-05-31 | 西安电子科技大学 | Gao Gongfen based on three line coupled structures compares broadband power divider |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| WO2021212818A1 (en) * | 2020-04-24 | 2021-10-28 | 苏州远创达科技有限公司 | Broadband doherty amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110417356B (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107332518A (en) | A kind of broadband Doherty power amplifier | |
| CN104660176B (en) | Doherty amplifier | |
| CN101785177B (en) | Integrated doherty amplifier | |
| CN107565908A (en) | Doherty amplifier circuit | |
| WO2021212818A1 (en) | Broadband doherty amplifier | |
| US20100001802A1 (en) | Integrated doherty type amplifier arrangement with high power efficiency | |
| CN106537769A (en) | Systems and methods related to linear and efficient broadband power amplifiers | |
| CN101617403A (en) | High power integrated RF amplifier | |
| CN111416578B (en) | Broadband integrated Doherty power amplifier based on low Q output network | |
| Thian et al. | A 76–84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer | |
| WO2009060264A1 (en) | Integrated circuit having harmonic termination circuitry | |
| US20080079496A1 (en) | Amplifier containing programmable impedance for harmonic termination | |
| CN104917472A (en) | Power amplifier circuit, power amplification device and broadband matching method of power amplification device | |
| US10320335B1 (en) | Compact doherty power amplifier using non-uniform phase match devices | |
| CN104378074A (en) | Combiner circuit for a class-E outphasing power amplifier | |
| CN110808716A (en) | Doherty radio frequency power amplifier and output matching network structure thereof | |
| WO2023041032A1 (en) | Output matching module, and doherty power amplifier | |
| CN106533372A (en) | Piecewise external matching type miniature power amplifier | |
| CN104716913B (en) | Load modulation power amplifier | |
| KR100844904B1 (en) | Power amplifier used power combiner | |
| CN110417356A (en) | A kind of broadband high-efficiency Doherty amplifier | |
| CN110417357B (en) | Compact integrated doherty amplifier | |
| US20180254749A1 (en) | Doherty amplifier | |
| CN101488790A (en) | Power amplification apparatus and transmitter | |
| CN110417355A (en) | A kind of integrated high resistant line Doherty amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |