CN110416357A - A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station - Google Patents
A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station Download PDFInfo
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- CN110416357A CN110416357A CN201910622692.6A CN201910622692A CN110416357A CN 110416357 A CN110416357 A CN 110416357A CN 201910622692 A CN201910622692 A CN 201910622692A CN 110416357 A CN110416357 A CN 110416357A
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- 239000001257 hydrogen Substances 0.000 title claims abstract description 68
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 68
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 6
- 206010033799 Paralysis Diseases 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered stations, the method includes using light source to irradiate hetero-junction solar cell, the hetero-junction solar cell is heated between 20 DEG C to 300 DEG C by way of heat radiation by the light source while irradiation, and the light intensity of the light source is 1 ~ 160 sun light intensity.Hetero-junction solar cell hydrogen passivating method of the invention carries out hydrogen passivation to hetero-junction solar cell by the method that light source provides irradiation while heating, so that the structure of hydrogen paralysis facility is simple, and the mode of heat transfer is heat radiation, heat radiation heat transfer rate is fast, and thermal inertia is small and there is no reach thermally equilibrated problem with measurand.
Description
Technical field
The present invention relates to cell piece manufacturing technology fields, and in particular to a kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivation
Device, battery, battery component and solar powered station.
Background technique
Heterojunction solar battery is because having low technological temperature, high conversion efficiency, stability test are good and temperature coefficient is low etc.
Feature and paid close attention to by researchers at home and abroad.Under normal circumstances, there are a large amount of interface state defects for silicon chip surface, this is main
It is as caused by a large amount of hanging key defects of silicon chip surface, is effective photo-generated carrier complex centre.Experiment and notional result
All show that, when interface state defects density is too big, open-circuit voltage, fill factor and the transfer efficiency of battery will sharply decline.
And the passivation ability excellent by a-Si:H (i) film, can the hanging key defect to silicon chip surface be effectively passivated, thus greatly
The big minority carrier that reduces can make the open-circuit voltage of hetero-junction solar cell reach 700mV or more in the recombination rate of heterojunction boundary,
Battery efficiency is increased dramatically.Hydrogen passivation technology in the prior art is typically all to pass through individual heating device to silion cell
It is heated, then provides the incident photon-to-electron conversion efficiency irradiated to promote silion cell by individual light source for silion cell, needs mention
It is heated for an individual region, such that the structure of hydrogen paralysis facility becomes complicated, and the mode conducted heat is
Heat transfer or thermal convection, heat transfer rate is slow, and thermal inertia is small and to consider to reach thermally equilibrated problem with measurand.
Summary of the invention
The purpose of the present invention is being directed to the problems of the prior art, a kind of improved hetero-junction solar cell hydrogen passivation side is provided
Method.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of hetero-junction solar cell hydrogen passivating method, the method includes using light source to irradiate hetero-junction solar cell, the light source irradiation
While the hetero-junction solar cell is heated between 20 DEG C to 400 DEG C by way of heat radiation, the light intensity of the light source is 1
~ 160 sun light intensity.
Preferably, the spectrum of the light source has part or all of spectral wavelength to fall in the region 100nm-1100nm.
It preferably, is 3 ~ 500s by the time that the light source heats the hetero-junction solar cell.
Preferably, the light source is LED light source.
Further, the LED light source is provided with one or more.
Preferably, the range of exposures of the light source covers all surfaces product of the hetero-junction solar cell.
Preferably, the method also includes cooling down after heating to the hetero-junction solar cell.
Further, the hetero-junction solar cell is cooled down by cooling medium.
Preferably, the exposure intensity that the light source is applied to the hetero-junction solar cell can be adjusted.
Preferably, the hetero-junction solar cell includes a central crystal silicon layer, is located at the upper of the central crystal silicon layer
Side and lower section two layers of hydrogenated amorphous body silicon deposition layer, be separately positioned on above and below hydrogenated amorphous body silicon deposition layer on
Anti-reflecting layer.
The present invention also provides a kind of hetero-junction solar cell hydrogen passivating device, the hydrogen passivating device is according to such as any of the above-described institute
The hydrogen passivating method stated carries out hydrogen Passivation Treatment to the hetero-junction solar cell.
The present invention also provides a kind of battery, which carries out hydrogen passivation using hydrogen passivating method as described in any one of the above embodiments
Processing.
The present invention also provides a kind of battery component, battery component includes multiple concatenated batteries mutually, and the battery uses
Hydrogen passivating method as described in any one of the above embodiments carries out hydrogen Passivation Treatment.
The present invention also provides a kind of solar powered station, including multiple battery components, the battery component is used as above-mentioned
Described in any item hydrogen passivating methods carry out hydrogen Passivation Treatment.
Due to the application of the above technical scheme, compared with the prior art, the invention has the following advantages: using of the invention
Hetero-junction solar cell hydrogen passivating method carries out hydrogen passivation to hetero-junction solar cell by the method that light source provides irradiation while heating, so that
The structure of hydrogen paralysis facility is simple, and conduct heat mode be heat radiation, heat radiation heat transfer rate is fast, thermal inertia it is small and there is no with
Measurand reaches thermally equilibrated problem.
Specific embodiment
Technical solution of the present invention is further elaborated below.
Hetero-junction solar cell HIT is band intrinsic sheet hetero-junctions, is made of a kind of utilization crystalline silicon substrates and amorphous silicon membrane
Mixed type solar battery, it has the characteristics that low technological temperature, high conversion efficiency, hot properties are good, is that a kind of low price is high
Imitate battery.
The hydrogen passivating method of hetero-junction solar cell of the invention is as follows:
Hetero-junction solar cell is irradiated using light source, by hetero-junctions electricity by way of heat radiation while light source irradiates hetero-junction solar cell
Pond heating.
Illumination can produce electric charge carrier, this not only can change minority carrier concentration, can also be by electron quasi-Fermi
It is moved in the band gap of the upper half, this can increase the concentration of balance H0, to improve passivation effect.It is used during hydrogen Passivation Treatment
Need to meet the light intensity of light source in 1 ~ 160 sun range of light intensity in the light source of irradiation, 1 sun light intensity is 1000w/m2,
The spectrum of light source has part or all of spectral wavelength to fall in the region 100nm-1100nm, which can provide stable irradiation
And radiant heat is passivated hetero-junction solar cell, hydrogen atom is diffused into inside silicon crystal, thus preferably on passivation interface
Silicon dangling bonds, to reduce the recombination-rate surface of silicon crystal.
Light source irradiation time is related with the light intensity of light source, and when light intensity is in 1 ~ 160 sun range of light intensity, light intensity is got over
The time of height, the irradiation needed is shorter, and light intensity is lower, and the time of required irradiation is longer, and irradiation time is generally 3 ~ 500s.
LED light source can be used in light source of the invention, and LED light source may be provided with one or more, and the range of exposures of light source needs
Cover all surfaces product of hetero-junction solar cell.When LED light source has it is multiple when, multiple LED light sources in matrix form arrange.
The exposure intensity that light source is applied to hetero-junction solar cell is adjustable, such as changes the irradiating angle of light source, changes irradiation
Light source quantity etc., thus the heating temperature of adjustable hetero-junction solar cell.
The temperature of hetero-junction solar cell semi-finished product can be improved when hydrogen Passivation Treatment, by heating so as to increase the expansion of hydrogen atom
It dissipates, to improve passivation effect.In view of the characteristic of hetero-junction solar cell, the excessively high structure that can destroy hetero-junction solar cell of heating temperature,
It therefore is 20 ~ 400 DEG C by the heating temperature that light source heats hetero-junction solar cell during hydrogen Passivation Treatment.
Passivation parameter by experimental test, when optimal to hetero-junction solar cell semi-finished product progress hydrogen passivation effect are as follows: heating
Temperature is 240 DEG C, light source intensity is 80 sun light intensity, irradiation time 150s；Or heating temperature is 280 DEG C, light source light
It is by force 80 sun light intensity, irradiation time 30s.
The hydrogen passivating method of hetero-junction solar cell of the invention further includes carrying out cooling technique to after hetero-junction solar cell heating
Step.To accelerate cooling time, when cooling, need to cool down hetero-junction solar cell by cooling medium.Cooling medium can adopt
With cryogenic gas such as cold wind, cold air or nitrogen, and make cooling medium in the environment of reciprocation cycle flowing to hetero-junctions electricity
Pond is freezed, and cooling procedure can be accelerated.
After the temperature that hetero-junction solar cell is heated is more than 300 DEG C, it is also desirable to cooling treatment is carried out to hetero-junction solar cell, with
Prevent hetero-junction solar cell from destroying.
Specifically, hetero-junction solar cell includes a central crystal silicon layer, is located above and below central crystal silicon layer
Two layers of hydrogenated amorphous body silicon deposition layer, be separately positioned on above and below hydrogenated amorphous body silicon deposition layer on antireflection
Layer, by the way that anti-reflecting layer is arranged, photon can be penetrated into hetero-junction solar cell when can promote light source irradiation.
Above-mentioned hetero-junction solar cell had both included hetero-junction solar cell finished product, also included hetero-junction solar cell semi-finished product, i.e., both can be with
Hydrogen passivation is carried out to hetero-junction solar cell using the hydrogen passivating method after the completion of hetero-junction solar cell preparation, it can also be in hetero-junctions electricity
Hydrogen passivation is carried out to hetero-junction solar cell using the hydrogen passivating method in the preparation process of pond.
The present invention also provides a kind of hydrogen passivating device, in hetero-junction solar cell preparation process or after the completion of preparing, using this
Hydrogen passivating device carries out hydrogen Passivation Treatment according to above-mentioned hydrogen passivating method.
The present invention also provides a kind of battery, which carries out hydrogen Passivation Treatment according to above-mentioned hydrogen passivating method.
The present invention also provides a kind of battery component, battery component includes multiple concatenated batteries mutually, and battery is according to above-mentioned
Hydrogen passivating method carry out hydrogen Passivation Treatment.
The present invention also provides a kind of solar powered station, including multiple battery components, battery component is blunt according to above-mentioned hydrogen
Change method carries out hydrogen Passivation Treatment.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar can understand the contents of the present invention and be implemented, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.
Claims (14)
1. a kind of hetero-junction solar cell hydrogen passivating method, it is characterised in that: the method includes using light source to irradiate hetero-junction solar cell,
The hetero-junction solar cell is heated between 20 DEG C to 400 DEG C by way of heat radiation by the light source while irradiation, described
The light intensity of light source is 1 ~ 160 sun light intensity.
2. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the spectrum of the light source has part
Or whole spectral wavelengths are fallen in the region 100nm-1100nm.
3. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: by described in light source heating
The time of hetero-junction solar cell is 3 ~ 500s.
4. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the light source is LED light source.
5. hetero-junction solar cell hydrogen passivating method according to claim 4, it is characterised in that: the LED light source is provided with one
It is a or multiple.
6. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the range of exposures of the light source is covered
Cover all surfaces product of the hetero-junction solar cell.
7. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the method also includes to described
It is cooled down after hetero-junction solar cell heating.
8. hetero-junction solar cell hydrogen passivating method according to claim 7, it is characterised in that: by cooling medium to described different
Matter junction battery is cooled down.
9. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the light source is applied to described different
The exposure intensity of matter junction battery can be adjusted.
10. hetero-junction solar cell hydrogen passivating method according to claim 1, it is characterised in that: the hetero-junction solar cell includes
One central crystal silicon layer, two layers of hydrogenated amorphous body silicon deposition layer being located above and below the central crystal silicon layer,
The anti-reflecting layer on hydrogenated amorphous body silicon deposition layer above and below being separately positioned on.
11. a kind of hetero-junction solar cell hydrogen passivating device, it is characterised in that: the hydrogen passivating device is appointed according in claim 1 ~ 10
Hydrogen passivating method described in one carries out hydrogen Passivation Treatment to the hetero-junction solar cell.
12. a kind of battery, it is characterised in that: it is blunt to carry out hydrogen using the hydrogen passivating method as described in any one of claim 1 ~ 10
Change processing.
13. a kind of battery component, it is characterised in that: including multiple concatenated batteries mutually, the battery uses such as claim 1
Hydrogen passivating method described in any one of ~ 10 carries out hydrogen Passivation Treatment.
14. a kind of solar powered station, it is characterised in that: including multiple battery components, the battery component is used as right is wanted
Hydrogen passivating method described in asking any one of 1 ~ 10 carries out hydrogen Passivation Treatment.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910622692.6A CN110416357A (en) | 2019-07-11 | 2019-07-11 | A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station |
| PCT/CN2020/101252 WO2021004521A1 (en) | 2019-07-11 | 2020-07-10 | Heterojunction battery hydrogen passivation method and hydrogen passivation device, battery, battery assembly, and solar power station |
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| CN201910622692.6A CN110416357A (en) | 2019-07-11 | 2019-07-11 | A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063769A (en) * | 2019-11-12 | 2020-04-24 | 晋能光伏技术有限责任公司 | Light injection process suitable for heterojunction solar cell |
| CN111564532A (en) * | 2020-04-03 | 2020-08-21 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| WO2021004521A1 (en) * | 2019-07-11 | 2021-01-14 | 苏州迈正科技有限公司 | Heterojunction battery hydrogen passivation method and hydrogen passivation device, battery, battery assembly, and solar power station |
| CN112687763A (en) * | 2020-12-28 | 2021-04-20 | 天合光能股份有限公司 | Preparation method of passivated contact crystalline silicon cell |
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| CN113130712A (en) * | 2021-04-15 | 2021-07-16 | 天合光能股份有限公司 | Solar cell and preparation method thereof |
| CN113937185A (en) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | Method for manufacturing heterojunction solar cell adopting hydrogen passivation |
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| FR3136892A1 (en) * | 2022-06-20 | 2023-12-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR PROCESSING A PHOTOVOLTAIC MODULE BY LIGHT IMMERSION |
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| WO2021004521A1 (en) * | 2019-07-11 | 2021-01-14 | 苏州迈正科技有限公司 | Heterojunction battery hydrogen passivation method and hydrogen passivation device, battery, battery assembly, and solar power station |
| CN111063769A (en) * | 2019-11-12 | 2020-04-24 | 晋能光伏技术有限责任公司 | Light injection process suitable for heterojunction solar cell |
| CN111564532A (en) * | 2020-04-03 | 2020-08-21 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| CN111564532B (en) * | 2020-04-03 | 2023-02-17 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
| CN112687763A (en) * | 2020-12-28 | 2021-04-20 | 天合光能股份有限公司 | Preparation method of passivated contact crystalline silicon cell |
| CN112768564A (en) * | 2021-01-20 | 2021-05-07 | 东方日升（常州）新能源有限公司 | Light injection passivation method of Topcon battery |
| CN113130712A (en) * | 2021-04-15 | 2021-07-16 | 天合光能股份有限公司 | Solar cell and preparation method thereof |
| CN113937185A (en) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | Method for manufacturing heterojunction solar cell adopting hydrogen passivation |
| FR3136892A1 (en) * | 2022-06-20 | 2023-12-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR PROCESSING A PHOTOVOLTAIC MODULE BY LIGHT IMMERSION |
| WO2023247451A1 (en) * | 2022-06-20 | 2023-12-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for treating a photovoltaic module by light soaking |
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