CN105449044B - Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell - Google Patents
Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell Download PDFInfo
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- CN105449044B CN105449044B CN201511020688.0A CN201511020688A CN105449044B CN 105449044 B CN105449044 B CN 105449044B CN 201511020688 A CN201511020688 A CN 201511020688A CN 105449044 B CN105449044 B CN 105449044B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000001257 hydrogen Substances 0.000 title claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 19
- 230000007547 defect Effects 0.000 title claims abstract description 15
- 230000008439 repair process Effects 0.000 title abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 239000011324 bead Substances 0.000 claims description 33
- 238000005057 refrigeration Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- 230000011514 reflex Effects 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000012937 correction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000002210 silicon-based material Substances 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a photo-induced hydrogen passivation and defect repair device for an LED (Light Emitting Diode) silicon solar cell. The device comprises a test bed for placing the silicon solar cell and keeping the temperature constant, and further comprises an LED light source system, an optical convergence system and a controller, wherein the LED light source system comprises an LED array for emitting light; the optical convergence system is arranged on a light emitting path of the LED array, and is used for converging the light emitted by the LED array to a detection area of the test bed; and the controller is used for modifying the parameters of the light emitted by the LED array as well as analyzing and calculating the passivation and defect parameters of the silicon solar cell. The device improves the conversion efficiency of the solar cell by passivating impurity defects in crystalline silicon, passivating a silicon material and repairing lattice defects such as dislocation in a polycrystalline silicon material.
Description
Technical field
The present invention relates to the hydrogen passivating technique of silicon solar cell is and in particular to a kind of led silicon solar cell photoinduction hydrogen is blunt
Change and bug repairing apparatus.
Background technology
In silicon solar cell preparation technology, silicon chip surface can deposit one layer of silicon nitride film as optics anti-reflection layer and table
Face passivation layer.Conventional thin film deposition mode is pecvd method.Using the method, in silicon nitride film and silicon chip near surface
Substantial amounts of hydrogen atom or hydrion can be contained in certain thickness.These hydrogen have very strong reactivity, can be with silicon materials
In impurity and silicon crystal lattice in various defects react, thus producing passivation effect, be conducive to solar cell opto-electronic conversion
The lifting of efficiency.
For the hydrogen in silicon materials, according to its state of charge, there are three kinds of forms, be h respectively+、h0And h-.In thermal balance
Under the conditions of, in p-type silicon, majority carrier is hole, positively charged, therefore now h-Concentration very low, h+Occupy the majority；Think instead to exist
H in n-type silicon-Then occupy the majority；And h0Concentration in both is not all high.
It is impossible to avoid introducing a small amount of impurity in the manufacturing process of crystalline silicon, such as fei +、cri +；Deposit in the silicon of N-shaped doping
In p+；There is b in the silicon of p-type doping-Or ga-；Even in boron-doped p-type silicon, through the b-o of illumination generation+Complex etc..This
A little impurity or defect all can have a strong impact on the performance of solar cell.
Content of the invention
The invention discloses a kind of led silicon solar cell photoinduction hydrogen passivation and bug repairing apparatus.
Technical scheme is as follows:
A kind of led silicon solar cell photoinduction hydrogen passivation and bug repairing apparatus, including for placing silicon solar cell
Temperature keeps constant monitor station, also includes:
One LED light source system, including the led array for emitting beam；
One optical collection system, is arranged in the luminous light path of described led array, the light collection that led array is sent
Detection zone on monitor station；
One controller, in order to change the parameter of led array institute isolychn, and the passivation to silicon solar cell and defect
Parameter is analyzed computing.
Its further technical scheme is: described optical collection system includes multiple lens and reflex system；Led array bag
Include multiple led lamp beads, described lens correspond and are arranged on led lamp beads front end；Led array institute isolychn arrives through lens lighting
Detection zone on monitor station；Described reflex system includes reflecting mirror that arrange, that reflection is inward-facing around monitor station surrounding.
Its further technical scheme is: also includes diffusing glass, described diffusing glass is installed on led array and monitor station
Between.
Its further technical scheme is: the highest irradiation intensity that described led array reaches the light of monitor station is to be not less than
The irradiation intensity uniformity of the light of ten times of standard sun condition and arrival monitor station；Described standard sun condition is photon stream
Density meets am1.5；When the led lamp beads with exceeding a kind of luminescence band form led array, the LED lamp of different luminescence band
Pearl symmetric arrays.
Its further technical scheme is: described LED light source system also includes light intensity correction system, on arrival monitor station
The light intensity of detection zone be adjusted, to reach required irradiation intensity.
Its further technical scheme is: described controller includes connecting keyboard on the controller and liquid crystal display.
Its further technical scheme is: also includes heat abstractor, described heat abstractor includes water-cooling system and air-cooled system
System；Described water-cooling system includes the first refrigeration machine, tank, water pump and heat sink；Described heat sink is arranged on the upper table of led array
Face；The outlet connection water channel of described first refrigeration machine, to the heat transmission water refrigeration cool-down in tank；Described water pump is by tank
Heat transmission hydraulic pressure enter the water inlet of heat sink；The water inlet blowing mouth of a river connection refrigeration machine of described heat sink, heat transmission water band
Walk the heat of led array and flow back to refrigeration machine；Described air cooling system includes the second refrigeration machine and blower fan；Described blower fan is made second
The cold air of cold manufacture blows to the lower surface of led array.
Its further technical scheme is: described LED light source system also includes driving power supply；Described driving power supply includes point
Volt circuit, step-down type dc power conversion chip, operational amplifier, Schottky diode and filter coil；Described voltage-dropping type is straight
Model xl4005 of stream power conversion chip；The anti-phase input of the voltage output end concatenation operation amplifier of described bleeder circuit
End；The outfan of operational amplifier connects the second port of step-down type dc power conversion chip, and described operational amplifier is just
Power end connects the fifth port of step-down type dc power conversion chip, the negative power end ground connection of operational amplifier；Schottky two
The plus earth of pole pipe, negative pole connects the 3rd port of step-down type dc power conversion chip；Step-down type dc power conversion core
The first port ground connection of piece；The first end of described filter coil connects the 3rd port of step-down type dc power conversion chip, the
Two ends are the positive output end of drive circuit, and the in-phase input end of operational amplifier is as the negative output terminal of drive circuit；
Multiple led lamp beads are connected as LED lamp bead string；Multiple led lamp beads connection in series-parallel are in the positive output end of drive circuit and negative
Between outfan.
Its further technical scheme is: includes multigroup driving power supply, every group of its output current of driving power supply controllable, enters
And adjust the luminous intensity of the LED lamp bead string being connected to it on.
Its further technical scheme is: also includes constant temperature system, is connected on monitor station, in order to keep solar cell piece
Temperature be 300 degrees Celsius.
The method have the benefit that:
The present invention passes through the combination in 404nm or 940nm or multiple wave band for the led array light source, produces highest not low
In ten standard solar irradiation photon Radar system (described standard solar irradiation photon Radar system is to meet am1.5 condition), use
The method that light irradiation injects carrier, a large amount of injected minority carriers (electronics) in p-type silicon are so that h-Concentration raise, from
And it is passivated fei +、cri +Deng impurity；Simultaneously using the h existing+Depassivation b-Or ga-Etc. defect, thus reducing carrier here
Compound, the performance of lifting solar cell of a little fault locations.For the boron-doped p-type silicon solar cell after photo attenuation, can make
With the invention enables h-Concentration raise, using h-Depassivation b-o+Complex, so that the photoelectric transformation efficiency of silicon solar cell
It is restored.The impurity defect that the present invention not only can be passivated in crystalline silicon, it is also possible to be passivated silicon materials, repairs polycrystalline silicon material
The lattice defects such as Dislocations, lift solar cell conversion efficiency.
Make to produce a large amount of nonequilibrium carriers inside silicon chip, thus change the internal h of silicon chip+And h-Concentration and increase it
Transfer ability, impurity defect in crystalline silicon can be passivated it is also possible to passivation silicon materials, particularly polycrystalline silicon material simultaneously
The lattice defects such as Dislocations, the conversion efficiency of lifting silicon solar cell.
With respect to LASER Light Source have cost is high and irradiated area to be difficult to business silicon solar cell big
Little the shortcomings of, with Sony ericsson mobile comm ab led as light source, more stable, the cheap, long-life, waveband selection flexibly, reduces the present invention
Equipment manufacturing cost and maintenance cost.
Present invention employs high efficiency and LED light source is radiated cheap radiating mode so that produced heat
Can dissipate rapidly in a short period of time, to ensure the reliability service of whole device.
Brief description
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the schematic diagram of led array.
Fig. 3 is the index path in light path collecting system.
Fig. 4 is the schematic diagram of water-cooling system.
Fig. 5 is the schematic diagram of air cooling system.
Fig. 6 is the circuit structure diagram of the driving power supply of led array.
Specific embodiment
Fig. 1 is the structural representation of the present invention.The present invention includes the monitor station for placing silicon solar cell, monitor station
Temperature keeps constant.Also include:
One LED light source system, including the led array for emitting beam；The wavelength of light that led array is sent is
404nm, 940nm or other wavelength；
One optical collection system, is arranged in the luminous light path of led array, the light collection that led array is sent arrives
Detection zone on monitor station；
One controller, in order to change the parameter values such as the temperature and humidity of whole device, can control led array institute simultaneously
The offset of the irradiation intensity of isolychn, and the passivation to detected silicon solar cell carried out with supplemental characteristics such as defects
Analytic operation.Keyboard and LCDs are also associated with controller.Keyboard is used for input instruction, by operation keyboard, can lead to
Cross and change in led array the driving current of led lamp beads or voltage to change light intensity.And pass through operation keyboard, can control
The working condition of whole device, realizes the switch of device or the control of testing result output.The data detecting is being carried out point
After analysis computing, result can be delivered to display on liquid crystal display.
Present invention additionally comprises water-cooling system and air cooling system, play the effect for LED light source system radiating.
Fig. 2 is led array schematic diagram.Led array includes multiple led lamp beads, the compact arrangement in led lamp beads interval, arrangement
The uniform and adjacent led lamp beads spacing distance in position is equal.When the led lamp beads of the luminescence band with more than one form led battle array
During row, the led lamp beads arrangement position of different luminescence band is symmetrical, so that in detection zone, that is, on radiating surface, reaches each luminous ripple
The consistent irradiation of section even intensity.In the present embodiment, there are the led lamp beads of 6 kinds of luminescence band, the led lamp beads of identical label
Represent it and there is identical luminescence band.The led lamp beads of 6 kinds of luminescence band are centrosymmetric arrangement as shown in Figure 2.
It is that the highest photon Radar system that led array reaches the light of monitor station is to be not less than that led array also needs the condition meeting
Ten times of standard sun condition.Described standard sun condition meets am1.5 condition for photon Radar system.
Fig. 3 is the index path of light path collecting system.Optical collection system includes multiple lens and reflex system；Led array
Including multiple led lamp beads, lens correspond and are arranged on led lamp beads front end.Led array institute isolychn passes through lens lighting to inspection
Detection zone on scaffold tower.Reflex system includes reflecting mirror that arrange, that reflection is inward-facing around monitor station surrounding, in order to incite somebody to action
The high angle scattered light that led array is sent reflexes to the detection zone on monitor station.
Because the directivity that led lights is well a lot of compared with traditional gas light source, lighting angle is less, therefore in order to reach in spoke
On showing up all with irradiation in addition it is also necessary to add diffusing glass, as shown in figure 3, diffusing glass be installed on led array and monitor station it
Between, so that the light of orientation is broken up.
Fig. 4 is the schematic diagram of water-cooling system.Water-cooling system includes the first refrigeration machine, tank, water pump and heat sink.Heat sink
It is arranged on the upper surface of led array.The outlet connection water channel of the first refrigeration machine, to the heat transmission water refrigeration cool-down in tank,
Heat transmission hydraulic pressure in tank is entered the water inlet of heat sink by water pump, and the outlet of heat sink connects the water inlet of refrigeration machine, dissipates
Heat water is taken away the heat of led array and is flowed back to refrigeration machine.
Fig. 5 is the schematic diagram of air cooling system.Air cooling system includes the second refrigeration machine and blower fan.Blower fan is by the second refrigeration mechanism
The cold air made blows to led array lower surface so that quick will be rapid on the downside of led array for heat distributed for the work of led array
Take away.
Fig. 6 is the schematic diagram of the driving power supply of led array.Driving power supply includes bleeder circuit, step-down type dc power supply becomes
Change chip ic1, operational amplifier ic2, Schottky diode d2 and filter coil l1.
Model xl4005 of step-down type dc power conversion chip ic1.
Bleeder circuit includes first resistor r1 and second resistance r2 connected, and one end of this series circuit connects voltage source v
Size, the other end is grounded.The common port of first resistor r1 and second resistance r2 is voltage output end, voltage output end concatenation operation
The inverting input of amplifier ic2.In the present embodiment, first resistor r1 stops for 20k ω, and the prevention of second resistance r2 is 1k
ω.
The outfan of operational amplifier ic2 connects second port fb of step-down type dc power conversion chip ic1, and computing is put
The positive power source terminal of big device ic2 connects fifth port vin of step-down type dc power conversion chip ic1, and operational amplifier ic2's is negative
Power end is grounded.
The plus earth of Schottky diode d2, negative pole connects the 3rd port of step-down type dc power conversion chip ic1
sw.The first port gn ground connection of step-down type dc power conversion chip ic1.In the present embodiment, the type of Schottky diode d2
Number be sk54.
The first end of filter coil l1 connects the 3rd port sw of step-down type dc power conversion chip ic1, and the second end is
For the positive output end of drive circuit, the in-phase input end of operational amplifier ic2 is as the negative output terminal of drive circuit.In this enforcement
In example, the model 47 μ h/5a of filter coil l1.
Drive circuit also includes the electric capacity of multiple auxiliary, plays the effect of filtering, voltage stabilizing.First electric capacity c1 and the 3rd electricity
Hold c3 in parallel, this parallel circuit one end is connected to fifth port vin of step-down type dc power conversion chip ic1, another termination
Ground.Second electric capacity c2 and the 4th electric capacity c4 is in parallel, and this parallel circuit one end connects the positive output end of drive circuit, another termination
Ground.5th electric capacity two ends are connected to the outfan of operational amplifier ic2 and the inverting input of operational amplifier ic2, shape
Become a feedback circuit so that Circuits System is more stable.In the present embodiment, the first electric capacity c1 is 150 μ f, the 3rd electric capacity c3
For 470 μ f, the second electric capacity c1 is 150 μ f, and the 4th electric capacity c3 is 470 μ f, and the 5th electric capacity is 0.1 μ f.
Multiple led lamp beads are connected as LED lamp bead string；Multiple led lamp beads connection in series-parallel are in the positive output end of drive circuit and negative
Between outfan.In the present embodiment, access 2 tunnels LED lamp bead string in parallel in each drive circuit.Every road LED lamp bead string by
11 led lamp beads are in series.
The present invention can carry out light intensity correction, the light intensity of the detection zone reaching on monitor station is adjusted, to reach
The irradiation intensity needing.The method adjusting light intensity is exactly to arrange multigroup driving power supply in LED light source system, and every group of driving power supply can
The led lamp beads being driven by it are individually controlled, then passes through to adjust the output voltage of each driving power supply, change LED lamp
The current value of pearl, so that light intensity reaches required irradiation intensity.
During actually used, the solar cell being passivated or solar module are placed on temperature to keep constant
On monitor station, in the present embodiment, the temperature keeping monitor station is 300 degrees Celsius, and the illumination that led array sends is mapped to sun electricity
Chi Shang, solar cell is passivated, and the liquid crystal display simultaneously being connected on controller can show the various parameters of solar cell
Value.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.It is appreciated that this
Skilled person directly derive without departing from the spirit and concept in the present invention or associate other improve and become
Change, be all considered as being included within protection scope of the present invention.
Claims (10)
1. a kind of passivation of led silicon solar cell photoinduction hydrogen with bug repairing apparatus it is characterised in that: include for placing silicon too
The temperature in positive electricity pond keeps constant monitor station, also includes:
One LED light source system, including the led array for emitting beam；
One optical collection system, arranges the light collection in the luminous light path of described led array, led array being sent and arrives and examine
Detection zone on scaffold tower；
One controller, in order to change the parameter of led array institute isolychn, and the passivation to silicon solar cell and defect parameters
It is analyzed computing.
2. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: institute
State optical collection system and include multiple lens and reflex system；Led array includes multiple led lamp beads, and described lens correspond
It is arranged on led lamp beads front end；Led array institute isolychn passes through the detection zone on monitor station for the lens lighting；Described reflection system
System includes reflecting mirror that arrange, that reflection is inward-facing around monitor station surrounding.
3. led silicon solar cell photoinduction hydrogen passivation according to claim 2 and bug repairing apparatus, is characterized in that: also
Including diffusing glass, described diffusing glass is installed between led array and monitor station.
4. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: institute
The highest irradiation intensity stating the light that led array reaches monitor station is to be not less than ten times of standard sun condition and reach monitor station
The irradiation intensity uniformity of light；Described standard sun condition meets am1.5 for photon Radar system；When with exceeding a kind of luminous ripple
During the led lamp beads composition led array of section, the led lamp beads symmetric arrays of different luminescence band.
5. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: institute
State LED light source system and also include light intensity correction system, the light intensity of the detection zone reaching on monitor station is adjusted, to reach
Required irradiation intensity.
6. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: institute
State controller to include connecting keyboard on the controller and liquid crystal display.
7. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: also
Including heat abstractor, described heat abstractor includes water-cooling system and air cooling system；Described water-cooling system includes the first refrigeration machine, water
Groove, water pump and heat sink；Described heat sink is arranged on the upper surface of led array；The outlet of described first refrigeration machine connects water
Groove, to the heat transmission water refrigeration cool-down in tank；Heat transmission hydraulic pressure in tank is entered the water inlet of heat sink by described water pump；Institute
That states heat sink blows the water inlet that the mouth of a river connects refrigeration machine, and heat transmission water is taken away the heat of led array and flowed back to refrigeration machine；Described
Air cooling system includes the second refrigeration machine and blower fan；Described blower fan blows to the cold air of the second refrigeration machine manufacture under led array
Surface.
8. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: institute
State LED light source system and also include driving power supply；Described driving power supply includes bleeder circuit, step-down type dc power conversion chip
(ic1), operational amplifier (ic2), Schottky diode (d2) and filter coil (l1)；Described step-down type dc power conversion core
Model xl4005 of piece (ic1)；The anti-phase input of voltage output end concatenation operation amplifier (ic2) of described bleeder circuit
End；The outfan of operational amplifier (ic2) connects the second port (fb) of step-down type dc power conversion chip (ic1), described
The positive power source terminal of operational amplifier (ic2) connects the fifth port (vin) of step-down type dc power conversion chip (ic1), computing
The negative power end ground connection of amplifier (ic2)；The plus earth of Schottky diode (d2), negative pole connects step-down type dc power supply and becomes
Change the 3rd port (sw) of chip (ic1)；First port (gn) ground connection of step-down type dc power conversion chip (ic1)；Described
The first end of filter coil (l1) connects the 3rd port (sw) of step-down type dc power conversion chip (ic1), the second end for
The positive output end of drive circuit, the in-phase input end of operational amplifier (ic2) is as the negative output terminal of drive circuit；
Multiple led lamp beads are connected as LED lamp bead string；Multiple led lamp beads connection in series-parallel are in the positive output end of drive circuit and negative output
Between end.
9. led silicon solar cell photoinduction hydrogen passivation according to claim 8 and bug repairing apparatus, is characterized in that: bag
Include multigroup driving power supply, every group of its output current of driving power supply controllable, and then adjust sending out of the LED lamp bead string being connected to it on
Light intensity.
10. led silicon solar cell photoinduction hydrogen passivation according to claim 1 and bug repairing apparatus, is characterized in that: also
Including constant temperature system, it is connected on monitor station, the temperature in order to keep solar cell piece is 300 degrees Celsius.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511020688.0A CN105449044B (en) | 2015-12-30 | 2015-12-30 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511020688.0A CN105449044B (en) | 2015-12-30 | 2015-12-30 | Photo-induced hydrogen passivation and defect repair device for LED (Light Emitting Diode) silicon solar cell |
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| CN105449044A CN105449044A (en) | 2016-03-30 |
| CN105449044B true CN105449044B (en) | 2017-02-01 |
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| CN107204742A (en) * | 2016-03-15 | 2017-09-26 | 南京黛傲光电科技有限公司 | A kind of silicon solar cell light decay device based on LED array light source |
| CN107204389A (en) * | 2017-06-21 | 2017-09-26 | 江南大学 | A kind of quick light decay device of silicon solar cell using LED as light source |
| CN108598270A (en) * | 2018-06-12 | 2018-09-28 | 江南大学 | Using LED as the quick preparation device of the perovskite solar cell of light source |
| CN110102876A (en) * | 2019-04-30 | 2019-08-09 | 旻投电力发展有限公司 | A kind of cryogenic assembly recovery technique based on laser |
| CN110416357A (en) * | 2019-07-11 | 2019-11-05 | 苏州迈正科技有限公司 | A kind of hetero-junction solar cell hydrogen passivating method, hydrogen passivating device, battery, battery component and solar powered station |
| CN112466983A (en) * | 2020-06-10 | 2021-03-09 | 帝尔激光科技(无锡)有限公司 | Method and equipment for repairing solar cell interface defects |
| CN114709294B (en) * | 2022-05-31 | 2022-11-29 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
Citations (1)
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| CN103323434A (en) * | 2013-05-29 | 2013-09-25 | 浙江大学 | LED excited solar cell photoluminescence detection device |
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