CN110416242A - Display panel and its manufacturing method - Google Patents
Display panel and its manufacturing method Download PDFInfo
- Publication number
- CN110416242A CN110416242A CN201910654029.4A CN201910654029A CN110416242A CN 110416242 A CN110416242 A CN 110416242A CN 201910654029 A CN201910654029 A CN 201910654029A CN 110416242 A CN110416242 A CN 110416242A
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- flatness layer
- display panel
- substrate
- led
- circuit chip
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Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention discloses a kind of display panel and its manufacturing method.The display panel includes: substrate;Several LED, array arrangement is in the side of the substrate;Flatness layer is set to the side of the substrate and covering several LED;Drive circuit chip is set to the side backwards to several LED of the flatness layer;Bonding structure runs through the flatness layer, and connects the drive circuit chip and LED.The present invention can simplify the Joining Technology between drive circuit chip and LED, improve product yield.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of display panel and its manufacturing methods.
Background technique
With the development of display technology, various products having a display function appear in daily life and work, example
Such as mobile phone, tablet computer, laptop, digital camera and navigator.These display products require assembly display panel.
These display panels can be with are as follows: LCD display panel, OLED display panel, LED display panel or Micro-LED display panel etc..
Display technology of the Micro-LED display panel as a new generation is that traditional LED structure is carried out miniatureization and square
Array makes single LED size reduction to tens microns even several microns, and realize each LED pixel point addressing, individually
Driving shines.Micro-LED display panel has that high resolution, brightness are high, the service life is long, operating temperature range is wide, anti-interference energy
Power is strong, fast response time and advantage low in energy consumption, it has also become mainstream research hot spot.
In the manufacture craft of existing Micro-LED display panel, LED and drive circuit chip are respectively arranged at glass base
When two sides of plate, LED and drive circuit chip are electrically connected, need using side print (side printing) technique and
Lead is bypassed side then around to the back side from the one side of glass substrate by backside process (backside process) technique, is caused whole
A Joining Technology difficulty rises, and the connection type causes product yield lower.
Summary of the invention
The present invention provides a kind of display panel and its manufacturing method, to solve Micro-LED and drive in existing production technology
The technical problem that the electrical connection technology difficulty of dynamic circuit chip is big and product yield is lower.
To reach above-mentioned purpose, the present invention provides a kind of display panel, comprising:
Substrate;
Several LED, array arrangement is in the side of the substrate;
Flatness layer is set to the side of the substrate and covering several LED;
Drive circuit chip is set to the side backwards to several LED of the flatness layer;
Bonding structure runs through the flatness layer, and connects the drive circuit chip and LED.
Optionally, the flatness layer offers through-hole, and the bonding structure includes cabling and conductive column, and the cabling runs through
The through-hole simultaneously connects the drive circuit chip and conductive column, and the conductive column is connect with the LED.
Optionally, the display panel further includes protective layer, and the protective layer covers the cabling and the through-hole.
Optionally, the main material of the conductive column is metal or anisotropic conductive adhesive paste.
Optionally, the flatness layer coats several LED, and mutually attaches with the substrate.
Optionally, the main material of the flatness layer is polytetrafluoroethylene (PTFE), polysiloxanes, polymethyl methacrylate or poly-
Acid imide.
Optionally, the flatness layer is plane towards the side of several LED, and the flatness layer and substrate interval are set
It sets.
Optionally, the display panel further include encapsulation frame, the encapsulation frame enclose set and be bonded the flatness layer with
The edge of substrate.
Optionally, the flatness layer is glass plate.
To reach above-mentioned purpose, the present invention additionally provides a kind of manufacturing methods of display panel, comprising:
Substrate is provided;
Several LED being arranged in array are set on the substrate;
Bonding structure and flatness layer are formed, the flatness layer is set to the side of the substrate and covering several LED,
The bonding structure is through the flatness layer and connects the LED;
In the side backwards to several LED of the flatness layer, drive circuit chip, the bonding structure and institute are set
State drive circuit chip connection.
Above-mentioned display panel and its manufacturing method, by the way that drive circuit chip and LED to be set to the same side of substrate, and
Use bonding structure connection drive circuit chip and LED to realize electrical connection between the two, the simple process of ipsilateral electrical connection,
The Joining Technology between drive circuit chip and LED can be simplified on the whole, help to promote product yield.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the first embodiment of display panel of the invention;
Fig. 2 is the structural schematic diagram of the second embodiment of display panel of the invention;
Fig. 3 is the structural schematic diagram of the 3rd embodiment of display panel of the invention;
Fig. 4 is the flow diagram of one embodiment of manufacturing method of display panel of the invention.
Main element symbol description
Display panel | 10 | Substrate | 11 |
LED | 12 | Flatness layer | 13 |
Drive circuit chip | 14 | Bonding structure | 15 |
Cabling | 151 | Conductive column | 152 |
Through-hole | 131 | Protective layer | 16 |
Encapsulate frame | 17 | Display panel | 20 |
Flatness layer | 21 | Through-hole | 211 |
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.In the absence of conflict, following each embodiments and its technical characteristic can be combined with each other.
In the production technology of existing Micro-LED display panel, when the miniature LED of flood tide is transferred on glass substrate it
Afterwards, it since drive circuit chip and LED are arranged on two opposite faces of glass substrate, when carrying out the bonding of the two, walks
Line need to from a face of glass substrate around side then around on another face, i.e. side print technique realizes a back
The processing procedure of process, but the Joining Technology difficulty is big, product yield is low, it is therefore necessary to a kind of new production technology is provided,
To reduce the difficulty of drive circuit chip and LED Joining Technology, while promoting product yield.
Referring to Fig. 1, the structural schematic diagram of the first embodiment for display panel 10 of the invention.The display of the present embodiment
Panel 10 includes: substrate 11, several LED12, flatness layer 13, drive circuit chip 14 and bonding structure 15.Wherein:
Substrate 11 can be glass substrate or plastic base, be located on the light emission direction of display panel in view of substrate 11,
Therefore substrate 11 need to have the transparency and translucency, so that light can pass through substrate 11.It should be appreciated that may be used also on substrate 11
To be provided with other structures element, such as TFT (Thin Film Transistor, thin film transistor (TFT)).
Several LED12, the LED12 refer to Micro-LED, these LED20 are arranged in array on substrate 11, Micro-
LED ultra micro is small, has the advantages that high-res.Flood tide transfer techniques can be used herein by several micron levels one by one
LED12 array arrangement in can be set on the side of substrate 11, one piece of substrate 11 hundreds of thousands even million LED12.One
In specific embodiment, several micron-sized LED12 of flood tide can precisely be adsorbed herein, such as electrostatic force, Fan Dewa can be used
Power or magnetic technique adsorb these LED12, then are transferred on substrate 11, and precisely discharge.Certainly, it can also use herein
Several LED12 are transferred on substrate 11 by emerging fluid assembly with the modes such as location technology or laser transfer techniques.
Flatness layer 13 is set to the side of substrate 11 and several LED12 of covering, in the present embodiment, flatness layer 13 and substrate
11 interval settings, i.e., substrate 11, several LED12,13 three of flatness layer stack gradually.The flatness layer 13 is in a glass plate-like,
For transparent glass material, such as use polymethyl methacrylate for the organic glass of main material.Organic glass has transparent
It is the advantages of property, chemical stability, mechanical property and weather resistance, easy to process, it is suitble to do flatness layer 13.Using methacrylic acid
And its esters are that raw material generation polymerization reaction obtains polymer, polymethacrylic acid resin can be obtained, can be obtained has
The flatness layer 13 of high optical transmittance and stability.
Drive circuit chip 14 is set to the side backwards to several LED12 of flatness layer 13.Drive circuit chip 14 can be
Drive IC (Integrated Circuit, integrated circuit) chip or FPC (Flexible Printed Circuit, flexible electrical
Road plate) etc. drive circuit chips.By the flatness layer 13 of setting, drive circuit chip 14 be can be set in flat level,
The stability of entire display panel is improved, while being convenient for the installation of drive circuit chip 14.
Bonding structure 15 runs through flatness layer 13, for connecting drive circuit chip 14 and LED12, so that drive circuit chip
Electrical connection is realized between 14 and each LED12.
In a specific embodiment, bonding structure 15 may include cabling 151 and conductive column 152, drive for being electrically connected
Dynamic circuit chip 14 and LED12.The conductive column 152 can use anisotropic conductive adhesive paste (Anisotropic Conductive
Film, ACF) it is made, anisotropic conductive adhesive paste specifically includes sticker and conductive metal particles, and sticker makes two kinds of substrate connections
Together, conductive metal particles are for providing guiding path.Conductive metal particles can be nickel or gold.
Cabling 151 passes through the through-hole 131 opened up on flatness layer 13 and connect with conductive column 152, to realize driving circuit
Being electrically connected between the two with LED12 of chip 14.The cabling 151 can be made of conductive metals such as gold or nickel.This implementation
Cabling 151 is preferably routed using nickel in example, and nickel is with certain degree of hardness, ductility and to have ferromagnetic metal member
Element, and there is strong corrosion resistance and electric conductivity.
When display panel in the present embodiment specifically makes, LED is transferred on substrate 11 it by flood tide transfer techniques
Afterwards, 13 glass plate of flatness layer is arranged in the side on LED12 far from substrate 11, afterwards by forming through-hole on etching technique glass plate
131, the width range of each through-hole 131 can be 45-55 microns, and the distance between every two through-hole 131 may range from
490-510 microns.ACF particle is filled on substrate 11 by through-hole 131, while to match with the height of LED12, ACF
The height of particle is maintained between 5-10 microns.Further, in order to guarantee the bonding between drive circuit chip 14 and LED12
Stability, the present embodiment can be filled metal in each through-hole 131 and contact with ACF, such as copper, gold, nickel.Cabling 151 is worn
ACF particle is gone to be electrically connected again after crossing the through-hole 131 for being inoculated with metal.
Above-mentioned display panel 10, by the way that drive circuit chip 14 and several LED12 to be set to the same side of substrate 11, and
Bonding structure 15 is used to connect drive circuit chip 14 and LED12 to realize the electrical connection of the two, the technique of ipsilateral electrical connection is kept away
Cabling processing procedure of the side used by side print technique and backsideprocess technique around to the back side, Neng Goucong are exempted from
Simplify the Joining Technology between drive circuit chip 14 and LED12 on the whole, helps to promote product yield.
Referring to Fig. 2, be the structural schematic diagram of the second embodiment of display panel 10 of the invention, it is aobvious in the present embodiment
Show that panel 10 and the display panel 10 in first embodiment are more or less the same, the difference is that:
Display panel 10 in the present embodiment further include: protective layer 16 and encapsulation frame 17.
Protective layer 16 covers cabling 151 and through-hole 131 avoids so that cabling 151 be made more to be tightly attached to 13 surface of flatness layer
Carry transportational process in cabling loosening and influence bonding as a result, to make to bind it is more stable.In the present embodiment, protective layer
16 silica gel etc. can be used to have sticking material to be made.
Encapsulation frame 17 encloses the edge for setting and being bonded in flatness layer 13 and substrate 11, i.e. a Side seal (face plate edge
Coating) manufacturing process.Flatness layer 13, LED20 and substrate 11 surrounded by setting encapsulation frame 17, substrate 11 with
The edges at two ends of flatness layer 13 contacts encapsulation with encapsulation frame 17, further avoids entire display panel 10 and is carrying, operating
And the case where may being hit and being damaged in installation process.
Specifically, the main material that encapsulation frame 17 uses may include EVA (ethylene-vinyl acetate
Copolymer, ethylene-vinyl acetate copolymer), one of PVB (polyvinyl butyral, polyvinyl butyral).
EVA has many advantages, such as good buffering, antidetonation, heat-insulated, moisture-proof, resist chemical;PVB have elasticity, toughness, alkali resistance by force,
The superior characteristic such as oil resistivity and low-temperature impact resistance, meanwhile, there is excellent bonding force to glass.
Above-mentioned display panel 10, by a covering protective layer 16 above cabling 151, and in flatness layer 13 and substrate
11 edge, which encloses, sets encapsulation frame 17, improves the mounting stability of display panel 10, further avoids entire display panel
10 the case where may being damaged because being hit in carrying, transport and installation process.
Referring to Fig. 3, the structural schematic diagram of the 3rd embodiment for display panel 20 of the invention.Identical mark is used herein
Number mark structural elements.The display panel 20 of the present embodiment includes: substrate 11, several LED12, flatness layer 21, driving electricity
Road chip 14 and bonding structure 15.Wherein:
Substrate 11 can be glass substrate or plastic base, be located on the light emission direction of display panel in view of substrate 11,
Therefore substrate 11 need to have the transparency and translucency, so that light can pass through the substrate 11.It should be appreciated that on substrate 11 also
Other structures element, such as TFT (Thin Film Transistor, thin film transistor (TFT)) can be set.
Several LED12, the LED12 refer to Micro-LED, these LED20 are arranged in array on substrate 11, Micro-
LED ultra micro is small, has the advantages that high-res.Flood tide transfer techniques can be used herein by several micron levels one by one
LED12 array arrangement in can be set on the side of substrate 11, one piece of substrate 11 hundreds of thousands even million LED12.One
In specific embodiment, several micron-sized LED12 of flood tide can precisely be adsorbed herein, such as electrostatic force, Fan Dewa can be used
Power or magnetic technique adsorb these LED12, then are transferred on substrate 11, and precisely discharge.Certainly, it can also use herein
Several LED12 are transferred on substrate 11 by emerging fluid assembly with the modes such as location technology or laser transfer techniques.
Flatness layer 21 is set to the side of substrate 11 and several LED12 of covering.In the present embodiment, flatness layer 21 wraps completely
LED12 is covered, and is attached with 11 phase of substrate.The material of flatness layer 21 can be polymethyl methacrylate, polytetrafluoroethylene (PTFE), poly- silicon oxygen
Alkane or polyimides etc. have the high-molecular organic material of transparent nature.Polytetrafluoroethylene (PTFE) have high temperature resistant, chemical property it is stable,
The strong feature of resistance to corrosion;Polysiloxanes has the characteristics that temperature tolerance is strong, the transparency is good and chemical property is stable;Polyimides
It is one of preferable high-molecular organic material of comprehensive performance, is indispensable high-molecular organic material in microelectric technique, very
It is suitable for the use of the flatness layer in display panel.In the present embodiment, flatness layer 21 is made using polyimides.
In one embodiment, the generation type of the flatness layer 21 can be with are as follows: by acid imide in oligomeric form, adds
Enter photoinitiator, causes the raw crosslinking curing of oligomeric single-shot, that is, produce flatness layer 21.After lead to overetched mode in flatness layer 21
Upper formation through-hole 211, for the connecting wiring of bonding structure 15.
Further, the height of flatness layer 21 can be greater than the height of LED12, so that the protection of the more great dynamics of flatness layer 21
The leg of LED12, while avoiding display panel and occur LED12 during transport and handling and cause because colliding or shaking
LED12 has the function that support entire display panel fixed there is a situation where loosening generation.In other embodiments, described
The height of flatness layer 21 can be flush with the height of LED12.
By the way that flatness layer 21 is arranged, drive circuit chip 14 is convenient for installing on flat burnishing surface.
Drive circuit chip 14 is set to the side backwards to several LED12 of flatness layer 21.Drive circuit chip 14 can be
Driving IC chip or FPC (wait drive circuit chips.By the flatness layer 21 of setting, drive circuit chip 14 be can be set in flat
In smooth level, the stability of entire display panel is improved, while being convenient for the installation of drive circuit chip 14.
Bonding structure 15 runs through flatness layer 21, for connecting drive circuit chip 14 and LED12, so that drive circuit chip
Electrical connection is realized between 14 and each LED12.
In one embodiment, bonding structure 15 may include cabling 151 and conductive column 152, for being electrically connected driving
Circuit chip 14 and LED12.Conductive column 152 can be formed on substrate 11 by the way of plating, chemical plating or metal evaporation.
Wherein plating is, using plated parent metal as cathode, by electrolysis, to make plating solution in the saline solution containing pre- plating metal
In pre- plating metal cation be deposited in base metal surface, form a kind of surface processing technique of coating;Chemical plating exists
By reducing agent in the case where without impressed current, metal ion in plating solution is set to be reduced to metal, and deposit to the surface of components;
Material is placed into vacuum environment by metal evaporation technique first, is made material occur to gasify and is deposited to substrate and obtain film material
Material.
Higher-height conductive column 152 can be produced using galvanoplastic, and specific shape is controllably made using electroless plating method
Conductive column 152 can be such that metal column is formed on different materials, such as inorganic material, organic material using metal evaporation.Because leading
Electric column 152 is the post-like conductive structure with certain altitude, to adapt to the height of LED12, carries out electricity convenient for one end and cabling 151
Connection, while the other end is electrically connected with the realization of the leg of LED12.Therefore, in the present embodiment, the conduction to adapt to the present embodiment
The height of column 152 produces conductive column 152 using the galvanoplastic of copper.Conductive column 152 can cylindrical, three-dimensional cylindricality or its
His three-dimensional shape.
Cabling 151 passes through the through-hole 211 opened up on flatness layer 13 and connect with conductive column 152, to realize driving circuit
Being electrically connected between the two with LED12 of chip 14.The cabling 151 can be made of conductive metals such as copper, gold or nickel.This reality
It applies in example cabling 151 to be preferably routed using copper, copper has ductility good, thermal conductivity and the high advantage of electric conductivity.
Be connected between drive circuit chip 14 and conductive column 152 by cabling 151, conductive column 152 be connected to LED12 and
Between cabling 151, so as to realize drive circuit chip 14 with LED12 being electrically connected between the two.
Above-mentioned display panel 20, by the way that drive circuit chip 14 and several LED12 to be set to the same side of substrate 11, and
Bonding structure 15 is used to connect drive circuit chip 14 and LED12 to realize the electrical connection of the two, the technique of ipsilateral electrical connection is kept away
Cabling processing procedure of the side around to the back side, Neng Goucong used by side print technique and backside process technique are exempted from
Simplify the Joining Technology between drive circuit chip 14 and LED12 on the whole, helps to promote product yield.Simultaneously by flat
The cladding LED12 completely of layer 21, makes the stability of entire display panel 20 get a promotion.
Referring to Fig. 4, the flow diagram of the manufacturing method for display panel of the invention.The manufacture of the display panel
Method includes step S41-S44:
S41 provides a substrate.
Substrate can be glass substrate or plastic base, be located on the light emission direction of display panel in view of substrate, therefore
Substrate need to have the transparency and translucency, so that light can pass through substrate.
Several LED chips being arranged in array are arranged in S42 on substrate.
LED chip can be transferred on substrate by this example using flood tide transfer techniques.In other embodiments, it can be used
Active force precisely adsorbs several micron-sized LED of flood tide, is then transferred on substrate, and precisely discharge, such as using using electrostatic
Power, Fan Dewali, magnetic technique.
S43 forms bonding structure and flatness layer, and the flatness layer is set to the side of the substrate and covering is described several
LED, the bonding structure is through the flatness layer and connects the LED.
Specifically, when flatness layer makes: can be arranged with substrate interval, i.e., substrate, several LED, flatness layer three be successively
Stacking.Flatness layer is in a glass plate-like at this time, is transparent glass material, such as uses polymethyl methacrylate for main material
Organic glass.
Flatness layer can also coat LED completely, and mutually attach with substrate.Flatness layer can be by high-molecular organic material system at this time
At organic high score with transparent nature such as usable methyl methacrylate, polytetrafluoroethylene (PTFE), polysiloxanes or polyimides
Sub- material.It selects a certain material in oligomeric form, photoinitiator is added, cause the raw crosslinking curing of oligomeric single-shot, Ji Kesheng
At flatness layer.LED is coated completely by the way that flatness layer is arranged, and is increased connective stability between LED and substrate, is protected the leg of LED,
Avoid during transportation display panel hit and easy to damage.
After the production for completing flatness layer, through-hole is opened up, on flatness layer for the wiring of bonding structure.
Bonding structure can specifically include the cabling and conductive column being electrically connected with each other, and conductive column can connect with the leg of LED
It connects, cabling passes through the through-hole on flatness layer, and one end is connect with drive circuit chip, and the other end is connect with metal column, to realize
Being electrically connected between drive circuit chip and LED.
The height of metal column need to be adapted with the height of LED, and the height of LED is between 5-10 microns, therefore metal column
Height can substantially do this height, and shape can be the shapes such as cylindrical, three-dimensional cylindricality.Material is specifically as follows copper, gold or nickel etc.
Metal or metal column directly adopt ACF.
When specific setting metal column, galvanoplastic, electroless plating method or metal evaporation can be used.
Drive circuit chip, the bonding structure is arranged in the side backwards to several LED of the flatness layer in S44
It is connect with the drive circuit chip.
After above-mentioned be ready to complete, drive circuit chip, driving electricity are set in the side backwards to several LED of flatness layer
Road chip is connect with one end of above-mentioned cabling, that is, is realized and to be electrically connected with LED.
Further, in order to guarantee transport and the stability in use of entire display panel, settable one layer of guarantor on cabling
Sheath, at the same the both ends of display panel be arranged protecting border so that display panel the service life is longer long.
LED is arranged by the way that substrate is first arranged in the manufacturing method of above-mentioned display panel on substrate, is formed on LED flat
Layer, re-forms bonding structure, drive circuit chip is arranged in the side backwards to LED of flatness layer, to make drive circuit chip
The same side of substrate has been set with LED, drive circuit chip and LED have been connected by bonding structure, to make driving circuit core
The Joining Technology of piece and LED are located at the same side of substrate, avoid side around to the back side and walk line process, keep Joining Technology simple
It is single, so that the yield of product is got a promotion.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of display panel characterized by comprising
Substrate;
Several LED, array arrangement is in the side of the substrate;
Flatness layer is set to the side of the substrate and covering several LED;
Drive circuit chip is set to the side backwards to several LED of the flatness layer;
Bonding structure runs through the flatness layer, and connects the drive circuit chip and LED.
2. display panel according to claim 1, which is characterized in that the flatness layer offers through-hole, the bonding knot
Structure includes cabling and conductive column, and the cabling is through the through-hole and connects the drive circuit chip and conductive column, described to lead
Electric column is connect with the LED.
3. display panel according to claim 2, which is characterized in that the display panel further includes protective layer, the guarantor
Sheath covers the cabling and the through-hole.
4. display panel according to claim 2, which is characterized in that the main material of the conductive column is metal or different side
Property conducting resinl.
5. display panel according to claim 1 or 2, which is characterized in that the flatness layer coats several LED, and
It is mutually attached with the substrate.
6. display panel according to claim 5, which is characterized in that the main material of the flatness layer is polytetrafluoroethyl-ne
Alkene, polysiloxanes, polymethyl methacrylate or polyimides.
7. display panel according to claim 1 or 2, which is characterized in that the flatness layer towards several LED one
Side is plane, the flatness layer and the setting of substrate interval.
8. display panel according to claim 7, which is characterized in that the display panel further includes encapsulation frame, described
Encapsulation frame encloses the edge for setting and being bonded the flatness layer and substrate.
9. display panel according to claim 8, which is characterized in that the flatness layer is glass plate.
10. a kind of manufacturing method of display panel characterized by comprising
Substrate is provided;
Several LED being arranged in array are set on the substrate;
Bonding structure and flatness layer are formed, the flatness layer is set to the side of the substrate and covers several LED, described
Bonding structure is through the flatness layer and connects the LED;
In the side backwards to several LED of the flatness layer, drive circuit chip, the bonding structure and the drive are set
Dynamic circuit chip connection.
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WO2021139626A1 (en) * | 2020-01-06 | 2021-07-15 | 京东方科技集团股份有限公司 | Display substrate, tiled display panel and display device |
CN113937122A (en) * | 2020-07-14 | 2022-01-14 | 重庆康佳光电技术研究院有限公司 | LED display panel, preparation method and electronic equipment |
WO2022252020A1 (en) * | 2021-05-31 | 2022-12-08 | 重庆康佳光电技术研究院有限公司 | Display backplane assembly, led display module and device, and related method |
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