CN110416137B - 用于半导体工艺的基板传送机构及成膜*** - Google Patents
用于半导体工艺的基板传送机构及成膜*** Download PDFInfo
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- CN110416137B CN110416137B CN201910320003.6A CN201910320003A CN110416137B CN 110416137 B CN110416137 B CN 110416137B CN 201910320003 A CN201910320003 A CN 201910320003A CN 110416137 B CN110416137 B CN 110416137B
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- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 230000007246 mechanism Effects 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 9
- 210000000245 forearm Anatomy 0.000 claims abstract description 9
- 238000012546 transfer Methods 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 230000007723 transport mechanism Effects 0.000 claims 4
- 239000010408 film Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Robotics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW107114636 | 2018-04-30 | ||
TW107114636A TWI668790B (zh) | 2018-04-30 | 2018-04-30 | 用於半導體製程之基板傳送機構及成膜裝置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110416137A CN110416137A (zh) | 2019-11-05 |
CN110416137B true CN110416137B (zh) | 2022-03-15 |
Family
ID=68316544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910320003.6A Active CN110416137B (zh) | 2018-04-30 | 2019-04-19 | 用于半导体工艺的基板传送机构及成膜*** |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2019195055A (ja) |
CN (1) | CN110416137B (ja) |
TW (1) | TWI668790B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI752416B (zh) * | 2020-02-19 | 2022-01-11 | 總督科技股份有限公司 | 晶圓載盤之置載裝置及其置載方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008141095A (ja) * | 2006-12-05 | 2008-06-19 | Tatsumo Kk | 半導体製造用搬送装置 |
TWI311794B (en) * | 2004-08-17 | 2009-07-01 | Mattson Tech Inc | Advanced low cost high throughput processing platform |
CN101872736A (zh) * | 2006-12-27 | 2010-10-27 | 大日本网目版制造株式会社 | 基板承载架和基板处理装置 |
CN102064126A (zh) * | 2010-11-04 | 2011-05-18 | 友达光电股份有限公司 | 基板运输处理***及方法 |
CN102134709A (zh) * | 2009-12-25 | 2011-07-27 | 东京毅力科创株式会社 | 成膜装置 |
CN102349144A (zh) * | 2009-03-13 | 2012-02-08 | 川崎重工业株式会社 | 具备末端执行器的机器人及其运行方法 |
CN103415649A (zh) * | 2011-03-01 | 2013-11-27 | 应用材料公司 | 具有连续旋转的原子层沉积旋转料架及其使用方法 |
CN103805961A (zh) * | 2012-11-14 | 2014-05-21 | 理想能源设备(上海)有限公司 | 金属有机化学气相沉积***及其传输承载腔与传输方法 |
US9202733B2 (en) * | 2011-11-07 | 2015-12-01 | Persimmon Technologies Corporation | Robot system with independent arms |
US10103046B2 (en) * | 2015-04-20 | 2018-10-16 | Applied Materials, Inc. | Buffer chamber wafer heating mechanism and supporting robot |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6132165A (en) * | 1998-02-23 | 2000-10-17 | Applied Materials, Inc. | Single drive, dual plane robot |
TWI451519B (zh) * | 2010-10-19 | 2014-09-01 | Au Optronics Corp | 基板運輸處理方法 |
WO2015013143A1 (en) * | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An end effector for transferring a substrate |
-
2018
- 2018-04-30 TW TW107114636A patent/TWI668790B/zh active
-
2019
- 2019-04-17 JP JP2019078398A patent/JP2019195055A/ja active Pending
- 2019-04-19 CN CN201910320003.6A patent/CN110416137B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI311794B (en) * | 2004-08-17 | 2009-07-01 | Mattson Tech Inc | Advanced low cost high throughput processing platform |
JP2008141095A (ja) * | 2006-12-05 | 2008-06-19 | Tatsumo Kk | 半導体製造用搬送装置 |
CN101872736A (zh) * | 2006-12-27 | 2010-10-27 | 大日本网目版制造株式会社 | 基板承载架和基板处理装置 |
CN102349144A (zh) * | 2009-03-13 | 2012-02-08 | 川崎重工业株式会社 | 具备末端执行器的机器人及其运行方法 |
CN102134709A (zh) * | 2009-12-25 | 2011-07-27 | 东京毅力科创株式会社 | 成膜装置 |
CN102064126A (zh) * | 2010-11-04 | 2011-05-18 | 友达光电股份有限公司 | 基板运输处理***及方法 |
CN103415649A (zh) * | 2011-03-01 | 2013-11-27 | 应用材料公司 | 具有连续旋转的原子层沉积旋转料架及其使用方法 |
US9202733B2 (en) * | 2011-11-07 | 2015-12-01 | Persimmon Technologies Corporation | Robot system with independent arms |
CN103805961A (zh) * | 2012-11-14 | 2014-05-21 | 理想能源设备(上海)有限公司 | 金属有机化学气相沉积***及其传输承载腔与传输方法 |
US10103046B2 (en) * | 2015-04-20 | 2018-10-16 | Applied Materials, Inc. | Buffer chamber wafer heating mechanism and supporting robot |
Also Published As
Publication number | Publication date |
---|---|
TWI668790B (zh) | 2019-08-11 |
JP2019195055A (ja) | 2019-11-07 |
CN110416137A (zh) | 2019-11-05 |
TW201946197A (zh) | 2019-12-01 |
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