CN110396669A - A kind of sputtering rotation aluminium copper target and preparation method thereof - Google Patents

A kind of sputtering rotation aluminium copper target and preparation method thereof Download PDF

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Publication number
CN110396669A
CN110396669A CN201910734709.7A CN201910734709A CN110396669A CN 110396669 A CN110396669 A CN 110396669A CN 201910734709 A CN201910734709 A CN 201910734709A CN 110396669 A CN110396669 A CN 110396669A
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target
aluminium
copper
powder
sputtering
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吴健
雷雨
肖世洪
周志宏
沈艳斌
周昭寅
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UV TECH MATERIAL Co Ltd
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UV TECH MATERIAL Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • C22C21/12Alloys based on aluminium with copper as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00Coating starting from inorganic powder
    • C23C24/02Coating starting from inorganic powder by application of pressure only
    • C23C24/04Impact or kinetic deposition of particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a kind of sputtering rotation aluminium copper targets and preparation method thereof.The sputtering rotation aluminium copper target includes following components in percentage by weight: infusibility substance 0.2-3wt%, copper 0.5-6wt% and aluminium surplus, the infusibility substance are the metal or oxide that fusing point is more than 1500 DEG C.The present invention prepares rotation aluminium copper target using high purity aluminum powder, copper powder, refractory metal or oxide powder as raw material, through cold spraying.It is method therefor simple process of the present invention, easy to operate, it is suitble to large-scale industrial production, the target prepared (>=99.9%), relatively denser (>=95%) with high purity, oxygen content are less than 1500ppm, excellent combination property.

Description

A kind of sputtering rotation aluminium copper target and preparation method thereof
Technical field
The present invention relates to rotary target material technical fields, and in particular to a kind of sputtering rotation aluminium copper target and its preparation side Method.
Background technique
Currently, the aluminium copper target of production is largely the planar targets or shorter sky by splicing binding small size Heart circular target prepares large-sized target.On the one hand there is the possibility repeatedly bound there are risk when binding processing, increase Production cost;On the other hand, due to binding the presence in gap, if occurring to beat arc phenomenon when target as sputter, it will influence plated film Quality.Meanwhile the planar targets or rotary target material of binding, utilization rate are relatively low.Common aluminium copper target, copper content one As be no more than 5wt%.Copper content is higher, and electric conductivity is better, and thermal stability is poor.And for industries such as integrated circuit, semiconductors, High temperature resistant, high pressure resistant and thermal stability etc. require very strict.Therefore, exploitation novel aluminum copper alloy target is highly desirable.
Summary of the invention
It is an object of the invention to a kind of sputtering rotation aluminium copper target is provided in place of overcome the deficiencies in the prior art And preparation method thereof, the target is with high purity, relatively denser, oxygen content is less than 1500ppm, electric conductivity, thermal stability and Nai Gao Pressure is had excellent performance.
To achieve the above object, the technical solution adopted by the present invention is as follows:
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: infusibility substance 0.2-3wt%, Copper 0.5-6wt% and aluminium surplus, the infusibility substance are the metal or oxide that fusing point is more than 1500 DEG C.
Sputtering of the invention rotates aluminium copper target, enhances electric conductivity by adding Cu;In addition high stable infusibility The addition of metal or oxide, improves the corrosion resistance and antioxygenic property of target, while inhibiting aluminium copper film Electromigration, enhance thin film strength.Target purity is high (>=99.9%), relatively denser (>=95%), oxygen content are small In 1500ppm, there is preferable electric conductivity, high temperature resistant, high pressure resistant and thermal stability.
Preferably, the sputtering rotates aluminium copper target, including following components in percentage by weight: infusibility substance 0.8-2wt%, copper 4.5-6wt% and aluminium surplus.Aluminium copper target is rotated using the sputtering that the proportion is prepared, is had both more Electric conductivity well, high pressure resistant and heat-resisting quantity.
Preferably, the infusibility substance includes at least one of tantalum, titanium, yttrium, zirconium oxide;Contain 5- in the zirconium oxide 7wt% yttrium.It is preferred that the type of infusibility substance, further improves the corrosion resistance and antioxygenic property of target.It is forged using high temperature The stable white powder of the yttrium containing 5-7% burnt, can promote the high temperature resistant and high voltage performance of target, wherein yttrium also can increase thin The adhesive force of film layer.
A kind of preparation method of above-mentioned sputtering rotation aluminium copper target, comprising the following steps:
(1) ingredient obtains target powder by way of mechanical mixture or mist projection granulating in proportion;
(2) continue electric arc after carrying out surface sand-blasting process to base tube using stainless-steel pipe or titanium tube as base tube and beat Bottom or thermal spraying treatment;
(3) cold spraying forms: the base tube after installation process, and target powder is added, and starting cooling device carries out cold spraying, obtains To target;
(4) target made from step (3) is machined, obtains finished product.
The present invention reduces oxygen compared with conventional spray paint technology using cold spray process sputtering rotation aluminium copper target The intervention of gas and other impurities, oxygen content is low, and yield is high, powder deposition is high.
Preferably, the D50 partial size of the target powder is 10-80 μm, and oxygen content is lower than 1500ppm, purity 99.9% More than.
Preferably, in the step (2), sand used in surface sand-blasting process is white fused alumina, steel wire cut pill or cast steel sand;It is excellent Selection of land, sand used in surface sand-blasting process are cast steel sand.
Preferably, in the step (2), the base tube surface roughness Ra after electric arc bottoming or thermal spraying treatment is 240- 500μm。
Preferably, in the step (2), prime material used in electric arc bottoming includes copper aluminium wire, nickel aluminium wire, copper-clad nickel powder At least one of;Preferably, using electric arc bottoming mode, prime material selects cupro-nickel silk and copper aluminium wire.
Preferably, in the step (3), cooling device is water-cooling apparatus or air cooling device, reduces base tube and coating Expanded by heating.It is highly preferred that cooling device is water-cooling apparatus.
Preferably, in the step (3), the technological parameter of cold spraying are as follows: main atmospheric pressure is 2-10Mpa, and nebulizer gas pressure is 3-10Mpa;Main gas heating temperature is 300-1000 DEG C;Spray distance is 20-100mm;Main gas and carrier gas are inert gas, excellent Selection of land, the inert gas select nitrogen.The present invention further promotes yield and powder deposition by related process parameters.
Compared with prior art, the invention has the benefit that
The present invention prepares rotation aluminium using high purity aluminum powder, copper powder and refractory metal or oxide powder as raw material, through cold spraying Copper alloy target.It is method therefor simple process of the present invention, easy to operate, it is suitble to large-scale industrial production, the target being prepared (>=99.9%), relatively denser (>=95%) with high purity, oxygen content are less than 1500ppm.
Existing pure aluminum target resistivity is generally (5-3) × E-4Ω/cm using low temperature is 100-160 DEG C, low-voltage when plated film For 300-420V).Aluminium copper target resistivity prepared by the present invention can reach (6-2) × E-6Ω/cm, temperature can be in 200- 300 DEG C, voltage is up to 500-650V, and resistivity is lower, conducts electricity very well.Therefore, target prepared by the present invention is led in raising But also with good high-temperature-resistant high-pressure-resistant performance, excellent combination property on the basis of electrical property.
Specific embodiment
Purposes, technical schemes and advantages in order to better illustrate the present invention, below in conjunction with specific embodiment to the present invention It further illustrates.It will be appreciated by those skilled in the art that described herein, specific examples are only used to explain the present invention, not For limiting the present invention.
In embodiment, used experimental method is conventional method unless otherwise specified, material used, reagent etc., It is commercially available unless otherwise specified.
Embodiment 1
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.5wt%, yttrium 0.5wt%, copper 2wt% and aluminium surplus.
The aluminium copper target of Al-Cu 2wt%-Ta 0.5wt%-Y 0.5wt% ingredient is prepared on stainless steel base tube, is had Body the following steps are included:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 20-40 μm, copper powder, tantalum powder and yttrium powder, match according to the above ratio Raw material powder is set, the target powder that D50 partial size is 10-80 μm is prepared by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 270-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 1:
Table 1
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
4 2300 420
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
120 30 35
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 5mm;Density 95%, oxygen content is less than 1300ppm.6 × E of resistivity-6Ω/cm, 200-220 DEG C of high temperature resistant.
Embodiment 2
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.4wt%, yttrium 0.4wt%, copper 4wt%, zirconium oxide 2wt% and aluminium surplus.
Al-Cu 4wt%-Ta 0.4wt%-Y 0.4wt%-ZrO is prepared in titanium tube2The aluminium copper target of 2wt% ingredient Material, specifically includes the following steps:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 45-70 μm, copper powder, tantalum powder, yttrium powder, zirconia powder (high temperature The stabilization powder of the yttrium oxide containing 7wt% of calcining), raw material powder is configured according to the above ratio, is prepared by way of mechanical mixture The target powder that D50 partial size is 10-80 μm;
(2) using titanium tube as base tube, and the stainless steel pipe surface of selection clean and sandblasting is carried out using cast steel sand Processing, reuses cupro-nickel silk electric arc bottoming, base tube roughness is made to reach 300-340 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, nitrogen air knife is cooling, cold spraying shape At coating, main gas and carrier gas are nitrogen, shown in process parameter table 2:
Table 2
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
4.5 2310 460
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
130 32 40
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 8mm;Density 96%, oxygen content is less than 800ppm.3.5 × E of resistivity-6Ω/cm, coated product adhesive force are 12N/mm2
Embodiment 3
A kind of sputtering rotates aluminium copper target, including following components in percentage by weight: yttrium 0.8wt%, copper 4wt%, Zirconium oxide 2wt% and aluminium surplus.
Al-Cu 4wt%-Y 0.8wt%-ZrO is prepared in titanium tube2The aluminium copper target of 2wt% ingredient, specifically includes Following steps:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 45-70 μm, copper powder, yttrium powder, zirconia powder (high-temperature calcination The stabilization powder of the yttrium oxide containing 7wt%), raw material powder is configured according to the above ratio, and D50 partial size is prepared by way of mechanical mixture For 10-80 μm of target powder;
(2) using titanium tube as base tube, and the stainless steel pipe surface of selection clean and sandblasting is carried out using cast steel sand Processing, reuses cupro-nickel silk electric arc bottoming, base tube roughness is made to reach 310-340 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, nitrogen air knife is cooling, cold spraying shape At coating, main gas and carrier gas are nitrogen, and process parameter table 3 shows:
Table 3
Main atmospheric pressure Mpa Nebulizer gas pressure Mpa Temperature DEG C
4.5 2330 450
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
150 35 40
(4) target made from step (3) is machined according to required size and precision, obtains finished product.
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 7.5mm;Density 96%, oxygen content is less than 800ppm.3.3 × E of resistivity-6Ω/cm, coated product adhesive force are 13N/mm2
Embodiment 4
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.5wt%, yttrium 0.5wt%, copper 6wt%, zirconium oxide 2wt% and aluminium surplus.
Al-Cu 6wt%-Ta 0.5wt%-Y 0.5wt%-ZrO is prepared in titanium tube2The aluminium copper target of 2wt% ingredient Material, specifically includes the following steps:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 45-70 μm, copper powder, tantalum powder, yttrium powder, zirconia powder (high temperature The stabilization powder of the yttrium oxide containing 7wt% of calcining), raw material powder is configured according to the above ratio, is prepared by way of mechanical mixture The target powder that D50 partial size is 10-80 μm;
(2) using titanium tube as base tube, and the stainless steel pipe surface of selection clean and sandblasting is carried out using cast steel sand Processing, reuses cupro-nickel silk electric arc bottoming, base tube roughness is made to reach 300-340 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, nitrogen air knife is cooling, cold spraying shape At coating, main gas and carrier gas are nitrogen, shown in process parameter table 4:
Table 4
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
5 2300 480
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
150 35 40
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 8mm;Density 96%, oxygen content is less than 750ppm.2.2 × E of resistivity-6Ω/cm, 215-245 DEG C of high temperature resistant.
Embodiment 5
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.1wt%, yttrium 0.1wt%, copper 0.5wt% and aluminium surplus.
The aluminium copper target of Al-Cu 0.5wt%-Ta 0.1wt%-Y 0.1wt% ingredient is prepared on stainless steel base tube, Specifically includes the following steps:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 20-40 μm, copper powder, tantalum powder and yttrium powder, match according to the above ratio Raw material powder is set, the target powder that D50 partial size is 10-80 μm is prepared by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 270-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 5:
Table 5
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
4.5 2320 430
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
120 30 35
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 5mm;Density 95%, oxygen content is less than 1350ppm.8 × E of resistivity-6Ω/cm, 205-235 DEG C of high temperature resistant.
Embodiment 6
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.4wt%, yttrium 0.4wt%, copper 6wt% and aluminium surplus.
The aluminium copper target of Al-Cu 6wt%-Ta 0.4wt%-Y 0.4wt% ingredient is prepared on stainless steel base tube, is had Body the following steps are included:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 20-40 μm, copper powder, tantalum powder and yttrium powder, match according to the above ratio Raw material powder is set, the target powder that D50 partial size is 10-40 μm is prepared by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 290-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 6:
Table 6
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
5 2320 480
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
120 30 35
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 6.5mm;Density 96%, oxygen content is less than 700ppm, 2.5 × E of resistivity-6Ω/cm, 235-265 DEG C of high temperature resistant.
Embodiment 7
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.8wt%, yttrium 1.2wt%, copper 4.5wt% and aluminium surplus.
The aluminium copper target of Al-Cu 4.5wt%-Ta 0.8wt%-Y 1.2wt% ingredient is prepared on stainless steel base tube, Specifically includes the following steps:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 20-40 μm, copper powder, tantalum powder and yttrium powder, match according to the above ratio Raw material powder is set, the target powder that D50 partial size is 15-45 μm is prepared by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 270-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 7:
Table 7
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
4.5 2315 460
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
125 35 35
(4) target made from step (3) is machined according to required size and precision, obtains finished product
The target of the present embodiment is formed by coating structure densification, and ingredient is uniform, flawless, with a thickness of 6mm, density 95%, oxygen content is less than 850ppm, 3.1 × E of resistivity-6Ω/cm, 245-275 DEG C of high temperature resistant, coated product adhesive force 16.5N/mm2
Comparing embodiment 1-5 and embodiment 6-7 result it is found that by adjusting infusibility substance, copper proportion, can effectively mention Electric conductivity, high temperature resistant and the coated product adhesion of thin film of target are risen, wherein infusibility substance 0.8-2wt%, copper in target When 4.5-6wt%, the resistivity that target is formed by coating is lower, and high temperature resistant and adhesive force are higher.
Comparative example 1
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: copper 2wt% and aluminium surplus.
The aluminium copper target of Al-Cu 2wt% ingredient is prepared on stainless steel base tube, specifically includes the following steps:
(1) buying purity be 99.9%, the aluminium powder and copper powder that mesh number is 20-40 μm, configure raw material powder according to the above ratio, The target powder that D50 partial size is 10-80 μm is prepared by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 270-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 8:
Table 8
(4) target made from step (3) is machined according to required size and precision, obtains finished product.
6.5 × E of this comparative example target resistivity-6Ω/cm, 155-175 DEG C of high temperature resistant.The difference from embodiment 1 is that this Comparative example is not added with refractory metal, and high temperature resistance differs greatly.Further illustrate necessity of present invention addition refractory metal Property.
Comparative example 2
A kind of sputtering rotation aluminium copper target, including following components in percentage by weight: tantalum 0.5wt%, yttrium 0.5wt% With aluminium surplus.
The aluminium copper target that Al-Ta 0.5wt%-Y 0.5wt% ingredient is prepared on stainless steel base tube, specifically include with Lower step:
(1) buying purity be 99.9%, the aluminium powder that mesh number is 20-40 μm, tantalum powder and yttrium powder, configure raw material according to the above ratio Powder prepares the target powder that D50 partial size is 10-80 μm by way of mechanical mixture;
(2) using stainless steel tube as base tube, and the stainless steel pipe surface of selection clean and is carried out using cast steel sand Blasting treatment reuses copper aluminium wire electric arc bottoming, base tube roughness is made to reach 270-320 μm;
(3) base tube handled well is mounted on spraying equipment, target powder is added, lead to recirculated water, it is 5-40 DEG C of water temperature, cold Spraying forms coating, and main gas and carrier gas are nitrogen, shown in process parameter table 9:
Table 9
Main atmospheric pressure Mpa Primary air amount Slpm Temperature DEG C
4.5 2330 460
Base tube revolving speed r/min Spray gun movement speed mm/s Spray distance mm
120 30 30
(4) target made from step (3) is machined according to required size and precision, obtains finished product
3 × the E of target resistivity of this comparative example-5Ω/cm.The difference from embodiment 1 is that this comparative example is not added with Cu member Element, the two resisitivity is larger, further illustrates the necessity of present invention addition Cu.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention And range.

Claims (10)

1. a kind of sputtering rotates aluminium copper target, which is characterized in that including following components in percentage by weight: infusibility substance 0.2-3wt%, copper 0.5-6wt% and aluminium surplus, the infusibility substance are the metal or oxide that fusing point is more than 1500 DEG C.
2. sputtering according to claim 1 rotates aluminium copper target, which is characterized in that including following weight percent Component: infusibility substance 0.8-2wt%, copper 4.5-6wt% and aluminium surplus.
3. sputtering according to claim 1 or 2 rotates aluminium copper target, which is characterized in that the infusibility substance includes At least one of tantalum, titanium, yttrium, zirconium oxide;Contain 5-7wt% yttrium oxide in the zirconium oxide.
4. it is a kind of as described in claim 1-3 sputtering rotation aluminium copper target preparation method, which is characterized in that including with Lower step:
(1) ingredient obtains target powder by way of mechanical mixture or mist projection granulating in proportion;
(2) using stainless-steel pipe or titanium tube as base tube, after carrying out surface sand-blasting process to base tube, continue electric arc bottoming or Thermal spraying treatment;
(3) cold spraying forms: the base tube after installation process, and target powder is added, and starting cooling device carries out cold spraying, obtains target Material;
(4) target made from step (3) is machined, obtains finished product.
5. the preparation method of sputtering rotation aluminium copper target according to claim 4, which is characterized in that the target powder The D50 partial size at end is 10-80 μm, and oxygen content is lower than 1500ppm, and purity is 99.9% or more.
6. the preparation method of sputtering rotation aluminium copper target according to claim 4, which is characterized in that the step (2) in, sand used in surface sand-blasting process is white fused alumina, steel wire cut pill or cast steel sand;Preferably, used in surface sand-blasting process Sand is cast steel sand.
7. the preparation method of sputtering rotation aluminium copper target according to claim 4, which is characterized in that the step (2) in, the base tube surface roughness Ra after electric arc bottoming or thermal spraying treatment is 240-500 μm.
8. the preparation method of sputtering rotation aluminium copper target according to claim 7, which is characterized in that the step (2) in, prime material used in electric arc bottoming includes at least one of copper aluminium wire, nickel aluminium wire, copper-clad nickel powder;Preferably, it adopts With electric arc bottoming mode, prime material selects cupro-nickel silk and copper aluminium wire.
9. the preparation method of sputtering rotation aluminium copper target according to claim 4, which is characterized in that the step (3) in, cooling device is water-cooling apparatus or air cooling device.
10. the preparation method of sputtering rotation aluminium copper target according to claim 4, which is characterized in that the step (3) in, the technological parameter of cold spraying are as follows: main atmospheric pressure is 2-10Mpa, nebulizer gas pressure 3-10Mpa;Main gas heating temperature is 300-1000℃;Spray distance is 20-100mm;Main gas and carrier gas are inert gas, it is preferable that the inert gas is selected Nitrogen.
CN201910734709.7A 2019-08-09 2019-08-09 A kind of sputtering rotation aluminium copper target and preparation method thereof Pending CN110396669A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111155063A (en) * 2019-12-31 2020-05-15 广州市尤特新材料有限公司 Titanium-aluminum alloy target material and preparation method thereof
CN112795912A (en) * 2020-12-28 2021-05-14 先导薄膜材料(广东)有限公司 Preparation method of aluminum-copper rotary target
CN113355626A (en) * 2021-05-28 2021-09-07 芜湖映日科技股份有限公司 Preparation process of niobium oxide rotary sputtering target material
CN113355628A (en) * 2021-05-24 2021-09-07 芜湖映日科技股份有限公司 Method for enhancing bonding strength between base tube and target coating
CN115159999A (en) * 2022-07-06 2022-10-11 青岛正望新材料股份有限公司 Rare earth raw material for producing functional refractory material for steelmaking and preparation method thereof

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CN103173729A (en) * 2011-12-26 2013-06-26 日立电线株式会社 Copper target material used for sputtering and manufacturing method thereof
CN104831244A (en) * 2015-04-17 2015-08-12 无锡舒玛天科新能源技术有限公司 Aluminum tantalum rotating target material, and method used for preparing aluminum tantalum rotating target material via controlled atmosphere cold spraying

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CN102037153A (en) * 2009-01-22 2011-04-27 东曹Smd有限公司 Monolithic aluminum alloy target and method of manufacturing
CN103173729A (en) * 2011-12-26 2013-06-26 日立电线株式会社 Copper target material used for sputtering and manufacturing method thereof
CN104831244A (en) * 2015-04-17 2015-08-12 无锡舒玛天科新能源技术有限公司 Aluminum tantalum rotating target material, and method used for preparing aluminum tantalum rotating target material via controlled atmosphere cold spraying

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111155063A (en) * 2019-12-31 2020-05-15 广州市尤特新材料有限公司 Titanium-aluminum alloy target material and preparation method thereof
CN111155063B (en) * 2019-12-31 2022-03-08 广州市尤特新材料有限公司 Titanium-aluminum alloy target material and preparation method thereof
CN112795912A (en) * 2020-12-28 2021-05-14 先导薄膜材料(广东)有限公司 Preparation method of aluminum-copper rotary target
CN112795912B (en) * 2020-12-28 2022-07-01 先导薄膜材料(广东)有限公司 Preparation method of aluminum-copper rotary target
CN113355628A (en) * 2021-05-24 2021-09-07 芜湖映日科技股份有限公司 Method for enhancing bonding strength between base tube and target coating
CN113355626A (en) * 2021-05-28 2021-09-07 芜湖映日科技股份有限公司 Preparation process of niobium oxide rotary sputtering target material
CN115159999A (en) * 2022-07-06 2022-10-11 青岛正望新材料股份有限公司 Rare earth raw material for producing functional refractory material for steelmaking and preparation method thereof
CN115159999B (en) * 2022-07-06 2023-03-24 青岛正望新材料股份有限公司 Rare earth raw material for producing functional refractory material for steelmaking and preparation method thereof

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Application publication date: 20191101