CN110391122B - 基底加工装置以及基底加工方法 - Google Patents

基底加工装置以及基底加工方法 Download PDF

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CN110391122B
CN110391122B CN201910132969.7A CN201910132969A CN110391122B CN 110391122 B CN110391122 B CN 110391122B CN 201910132969 A CN201910132969 A CN 201910132969A CN 110391122 B CN110391122 B CN 110391122B
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森幸博
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Abstract

基底加工装置的示例包括：台板；外周缘环，其围绕所述台板，同时在所述台板的侧表面与所述外周缘环之间设置有间隙；供气单元，其构造为将气体从所述间隙的下侧供应至所述间隙的上侧；以及上电极，其设置在所述台板上方。

Description

基底加工装置以及基底加工方法
技术领域
描述了涉及基底加工装置以及基底加工方法的示例。
背景技术
在半导体或液晶的制造过程中，在基底的外周缘部被夹紧的同时运送基底，或者搬运机器人的手与基底的背表面机械接触。结果，硅等的基底被刮掉，导致微细颗粒的产生。而且，当薄膜形成在基底上时，蔓延至基底的侧表面部并且沉积在那里的膜由于前述基底运送期间的接触而剥离，引起微细颗粒的产生。尤其是，具有沿拉伸方向的应力的膜趋于从基底剥离。
另外，蔓延至基底的背表面的外周缘部的导电膜妨碍将在随后的步骤中执行的静电吸附，或者产生沿纵向穿透基底的直流电，这造成了对元件的损坏。这些问题引起高度集成装置中的电气缺陷，并且大大地减少收益率。
为了防止或减少由于与基底的外周缘部的机械接触而产生的颗粒，使用了用于选择性地去除基底的外周缘部处的膜的方法。作为这样的方法的示例，专利文献1(JP2011-511437A)公开了等离子体蚀刻加工腔室，其被构造为对基底的倒角部上的薄膜进行蚀刻。
在专利文献1公开的蚀刻腔室中，其不能够有效地将反应气体引导至基底的背表面侧，使得难以将基底的背表面上的膜去除。因此，存在如下的情况：基底的侧表面或背表面上的膜在反应腔室中剥离，使得颗粒产生。而且，在专利文献1公开的装置中，反应气体四处流动到表面侧上的需要留下保护形成在基底的表面上的元件的膜上，并且因此表面侧上的膜的膜厚度减小，使得外周缘部处的元件的收益率减小。
发明内容
本文描述的一些示例可以解决上述问题。本文描述的一些示例可以提供基底加工装置以及基底加工方法，其能够抑制由基底的侧表面或背表面上的膜的剥离引起的颗粒的产生。
在一些示例中，基底加工装置可以包括：台板；外周缘环，其围绕台板同时在台板的侧表面与外周缘环之间设置有间隙；供气单元，其构造为将气体从间隙的下侧供给至间隙的上侧；以及上电极，其设置在台板上方。
附图说明
图1为示出了基底加工装置的示例的简图；
图2为示出了上电极和排气管的平面图；
图3为示出了基底加工方法的简图；
图4为基底的放大图；
图5A为示出了气体密度的模拟结果的简图；
图5B为示出了气体密度的模拟结果的简图；
图6示出了帕邢定律(Paschen's law)给出的曲线；
图7为等离子体加工之后的基底的理想截面图；
图8示出了基底的背表面侧上的膜厚度分布；
图9示出了基底的上表面侧上的膜厚度分布；
图10为根据另一个示例的基底加工装置的截面图；
图11为根据另一个示例的基底加工装置的截面图；
图12为根据另一个示例的基底加工装置的截面图；以及
图13为示出了等离子体加工的简图。
具体实施方式
图1为示出了基底加工装置的示例的简图。基底加工装置10包括台板12。台板12可以由接地的金属材料构造，例如，通过将金属材料连接至腔室等。当300mm的晶片被放置在台板12上时，台板12的直径X1被设定为小于300mm。300mm的晶片以外的基底可以被放置在台板12上，但是台板12的直径X1被设定为小于将放置在台板12上的基底的直径。
该台板12被外周缘环14包围。外周缘环14包围台板12，同时在外周缘环14与台板12的侧表面之间设置间隙16。因此，间隙16在平面图中具有圆环状。间隙16能够使气体从台板12的下侧供应至台板12的上侧。例如，上述气体供应能够由供气单元(气源)15执行。供气单元15将气体从间隙16的下侧供应至间隙16的上侧。将由供气单元15供应的气体为用于对形成在基底上的膜进行蚀刻的气体，或者为用于膜形成的气体。例如，供气单元15供应诸如氧气的反应气体。包含氧气的气体可以被用作反应气体。可以使用能够实现蚀刻或膜形成的任何反应气体。
外周缘环14可以由接地的金属材料构造，例如，通过将金属材料连接至腔室等。排气管18设置在外周缘环14上方。在平面图中排气管18具有圆环状以包围台板12。排气管18提供排气通道，通过所述排气通道被排气管18包围的空间中的气体被排放至外部。被排气管18包围的空间中的气体例如为台板12上方的气体。台板12上方的气体等被从排气管18的入口18b引导向环形通道18a，并且被排放至外部。
上电极20安装在排气管18上。作为整体，上电极20设置在台板12上方。上电极20包括第一部分20A、包围第一部分20A的第二部分20B以及包围第二部分20B的第三部分20C。例如，第一部分20A、第二部分20B以及第三部分20C由金属或者导体形成。第一部分20A具有面对台板12的第一底表面20a。第二部分20B具有第二底表面20b。从台板12的顶表面至第一底表面20a的高度距离由y1表示。从台板12的顶表面至第二底表面20b的高度距离由y2表示。距离y2大于距离y1。因此，第二底表面20b处于比第一底表面20a高的位置。第三部分20C的第三底表面20c安装在排气管18上，凭此安置了上电极20的位置，并且距离y1和y2被固定。
例如，第一底表面20a的直径X2可以被设定在从比台板12的直径X1大10mm的数值至比台板12的直径X1小10mm的数值的范围中。在图1中示出了第一底表面20a的直径X2小于台板12的直径X1。由于等离子体主要在第二底表面20b与台板12和外周缘环14中的每个之间产生，所以等离子体的范围能够通过调节第一底表面20a的直径而被扩大或限制。
高频电源被连接至上电极20。所述高频电源为上电极20提供产生等离子体所需的高频功率。例如，以从2MHz至60MHz的范围的频率为上电极20提供从100瓦至2000瓦的范围的功率。
上电极通孔20d形成在上电极20中以便穿透上电极20。上电极通孔20d可以设置在台板12的中心的正上方。例如，通过将惰性气体供应单元(气源)30设置在腔室的外部，惰性气体能够从上电极通孔20d的上侧被供应至上电极通孔20d的下侧。在一些示例中，多个上电极通孔20d可以形成在上电极20中。
图2为示出了上电极20和排气管18的平面图。排气管18的圆环通道中的气体由排气泵32排放至外部。由图2中的虚线表示间隙16，并且间隙16在平面图中具有圆环状。上述供气单元15为整个间隙16供应大致均匀的压力的气体。
图3为示出了使用图1的基底加工装置10的基底加工方法的简图。在该示例中，基底的侧表面和背表面上的膜被去除。首先，基底40被放置在台板12上。图4为图3的基底40的放大图。基底40具有中央部40A，以及围绕所述中央部40A的围绕部40B。围绕部40B为用于圆环状地围绕中央部40A的部分。当从不同角度观看时，基底40包括上表面40a、侧表面40b以及下表面40c。膜50形成在基底40上。膜50具有中央部40A的上表面上的第一膜50A、围绕部40B的上表面上的第二膜50B、围绕部40B的侧表面上的第三膜50C以及围绕部40B的背表面上的第四膜50D。
在通常的膜形成中，并不倾向在基底40的下表面40c上形成膜。然而，例如，在ALD(Atomic Layer Deposition，原子层沉积)等的情况下，气体分子渗入到底表面40c与感受器之间的间隙中，并且膜容易形成在下表面40C上。结果，围绕部40B的下表面40c上存在第四膜50D，而在中央部40A的下表面40c上不存在膜。
回到图2，只有基底40的中央部40A被放置在台板12上。围绕部40B突出至台板12的外部。当300mm的晶片被用作基底40时，通过将台板12的直径X1设定为小于300mm而能够使围绕部40B突出至台板12的外部。通过使围绕部40B突出至台板12的外部，围绕部40B位于间隙16的正上方。
随后，加工进行至等离子体加工。在等离子体加工中，惰性气体由惰性气体供应单元30从上电极通孔20d的上侧向下供应，同时反应气体由供气单元15从间隙16的下侧向上供应。由供气单元15从间隙16的下侧向上供应的反应气体从围绕部40B的下侧在围绕部40B周围流动，通过入口18b，并且随后被从圆环通道18a排放。而且，由惰性气体供应单元30从上电极通孔20d的上侧向下供应的惰性气体从基底40的中央正上方的位置沿径向扩散，通过第一底表面20a与基底40之间的空间，从入口18b进入圆环通道18a，并且随后被排放。
在如上所述形成气流的状态下，高频功率被施加至上电极20。结果，在围绕部40B的背表面侧以及围绕部40B的侧表面侧产生等离子体42，由此使围绕部40B经受等离子体加工。由于围绕部40B向台板12的外部突出，所以围绕部40B的背表面有效地暴露于通过反应气体产生的等离子体。
(关于气流的讨论)
图5A和图5B为示出了气体密度的模拟结果的简图。图5A为示出了2slm的氮气被用作沿着台板12的表面在径向上流动的惰性气体、并且1.5slm的氧气被用作从围绕部48B的下侧供应的反应气体时的气流的方案的简图。在该情况下，确认反应气体能够被有效地供应至基底40的背表面，并且反应气体也能够被抑制围绕基底40的表面流动。另一方面，图5B示出了使反应气体从台板12的上侧流动时的气体密度。在该情况下，作为反应气体的氧气没有被充分地供应至基底40的背表面。
在图5A和图5B二者的情况下，通过从基底40的中央侧向其外周缘侧供应惰性气体，反应气体能够被防止到达基底40的上表面40a。然而，相比于反应气体被从基底40的上侧供应的情况，通过从基底40的下侧供应反应气体，反应气体能够被更有效地供应到基底40的背表面上。
(关于等离子体生成区域的讨论)
图3示出了等离子体42仅形成在围绕部40B周围，而没有等离子体形成在中央部40A正上方。甚至当反应气体向中央部40A的正上方的位置的显著供应被抑制时，如果由惰性气体引起的Ar等离子体存在于该部分，则第一膜50A将受到影响。
为了防止或缓和上述情况，基于帕邢定律，第一底表面20a与中央部40A之间的距离y3可以被设定为没有排放发生所处的距离。例如，如图6所示，等离子体的点火电压符合帕邢定律。在图6中，p代表反应器中的压力，而d代表电极之间的间隔。点火电压VB为p和d的乘积pd的函数。因此，通过减小或增加第一底表面20a与中央部40A之间的距离y3抑制了等离子体的点火，同时图3所示的围绕部40B与第二底表面20b之间的距离y4被设定为用于等离子体的点火的最优值，由此能够在一些示例中选择性地生成等离子体。即，等离子体在中央部40A正上方的产生能够被抑制，同时在围绕部40B周围生成等离子体。如上所示，第一底表面20a与台板12之间的间隙被用于惰性气体的供应，并且设定为以便能够抑制等离子体的生成。通过抑制等离子体在第一底表面20a与台板12之间的生成，至少一定程度上能够防止形成在基底40的上表面上的第一膜50A被蚀刻或被修改。
基于前述关于气流的讨论以及前述关于等离子体生成区域的讨论来执行等离子体加工。图7为等离子体加工之后的基底40的理想截面图。第三膜50C和第四膜50D通过等离子体加工被去除，同时第一膜50A和第二膜50B被留下。结果，仅在基底40的上表面40a上能够留下膜。
图8和图9为示出了代表基底的背表面侧和表面侧的等离子体加工之前和之后的膜的厚度的实验数据的图表。实验数据通过在具有295mm的外径的台板上放置300mm的硅基底(其上形成有无定形碳涂层)，并且通过氧气等离子体去除外周缘膜而获得。氧气被从具有1mm的宽度的间隙16供应以生成氧气等离子体。氧气以大致均匀的密度被从在平面图中为圆环的间隙16供应。在图3中距离y3被设定为2mm并且距离y4被设定为18mm。13.56MHz和500W的高频功率被施加至上电极20以只在基底40的围绕部40B周围生成等离子体。供应的氧气的流速被设定为1升/分钟，台板12的温度被设定为150℃，并且反应压力被设定为400pa。
图8示出了基底的背表面侧上的膜厚度分布。从“蚀刻之前”的数据，明显的是在蚀刻之前较厚的膜存在于更接近背表面的外周缘侧的部分。“氧气上侧供应”的数据通过执行等离子体加工获得，同时从围绕部40B的上侧供应氧气。“氧气下侧供应”的数据通过等离子体加工获得，同时从围绕部40B的下侧供应氧气。即，“氧气下侧供应”的数据对应于图3的示例。虽然即使在“氧气上侧供应”的情况下基底的背表面上的膜在一定程度上能够被去除，但明显的是基底的背表面上的膜在“氧气下侧供应”的情况下比在“氧气上侧供应”的情况下能够被更大地去除。
图9示出了基底的上表面侧上的膜厚度分布。基底的上表面侧上的膜为装置必不可少的膜，并且因此应当抑制在膜上蚀刻。相比于“蚀刻之前”的情况，在“氧气下侧供应”的情况下，能够抑制膜厚度的减少量。另一方面，在“氧气上侧供应”的情况下，比“蚀刻之前”的情况膜厚度的减少量更大。
从图8和图9的结果，当反应气体被从根据图1和图3的构造的围绕部40B的下侧供应时，背表面上的膜能够被更有效地去除，并且相比于反应气体被从基底的上侧供应时也能够减小对上表面的内部的影响。
根据该示例的基底加工装置，在等离子体加工期间，只有围绕部40B经受等离子体加工，并且没有显著的等离子体加工作用在中央部40A上。通过基于前述“关于气流的讨论”以及“关于等离子体生成区域的讨论”执行等离子体加工，能够抑制对基底的上表面上的膜的影响，同时去除基底的侧表面和背表面上的膜。
图10为示出了根据另一个示例的基底加工装置的截面图。排气管18的入口18c设置在比图1的入口18b更高的位置。排气管18的入口可以被设置在任何地方。用于生成等离子体的反应气体和惰性气体可以被排放到外部而没有排气管18。
图11为示出了根据另一个示例的基底加工装置的截面图。上电极20的第一部分20D由绝缘体形成，并且第二部分20B由金属或导体形成。结果，能够抑制等离子体在基底的上表面上的生成，同时通过惰性气体抑制反应气体弥漫至基底的上表面侧。
图12为根据另一个示例的基底加工装置的截面图。第二底表面20b处于比第一底表面20a低的位置。第一底表面20a的位置被设定为比图1的第一底表面20a的位置高，同时第二底表面20b的位置被设定为与图1的第二底表面20b的位置相同。在该情况下，第一底表面20a与台板12之间的距离被充分地增加以增加图6中的pd的数值，凭此点火电压VB增加，并且因此能够抑制等离子体在台板12正上方的生成。图13为示出了使用图12的基底加工装置的等离子体加工的简图。通过增加距离y3，能够抑制等离子体在第一底表面20a正下方的生成，并且等离子体能够在第二底表面20b正下方生成。
在前述的示例中，已经主要描述了基底的侧表面和背表面上的膜的蚀刻。然而，通过上述基底加工装置膜可以形成在基底的侧表面和背表面上。当作为具有内应力的应力膜设置在基底的侧表面和背表面上时，存在应力膜可能容易从基底剥离并且变为颗粒的危险。因此，为了缓和如上所述的应力膜的应力，通过使用上述基底加工装置，应力缓和膜能够形成在应力膜上。例如，应力膜为诸如包含碳的低k膜的碳基膜。碳基膜具有张应力，并且容易剥离。在该情况下，应力缓和膜由使用上述基底加工装置的硅基膜形成在应力膜上，凭此应力能够被缓和，并且能够抑制膜剥离。
可以采用有具有其他形状的上电极，其能够使得容易地在围绕部40B的周围排放，但难以在中央部40A的周围排放。
如上所述，通过执行等离子体加工，反应气体能够至少一定程度上被防止从基底的外周缘侧弥漫至基底的内部，同时使得惰性气体从基底的上表面的中央正上方的位置沿径向流动。然而，当抑制等离子体在基底40的中央部40A正上方的生成时，可以省略惰性气体的供应以及惰性气体的供应所需的构造。

Claims (17)

1.一种基底加工装置，包括：
台板，其上仅放置基底的中央部，所述基底包括所述中央部和围绕所述中央部的围绕部；
外周缘环，其围绕所述台板，同时在所述台板的侧表面与所述外周缘环之间设置有间隙；
反应气体源，所述反应气体源包含反应气体并且将反应气体从所述间隙的下侧供给，使得在所述围绕部的后表面侧和围绕部的侧表面侧产生等离子体，以在所述围绕部上执行等离子体处理；以及
上电极，其设置在所述台板的上方。
2.根据权利要求1所述的基底加工装置，其中，所述上电极包括第一部分和第二部分，所述第一部分具有面对所述台板的第一底表面，所述第二部分围绕所述第一部分并且具有第二底表面。
3.根据权利要求2所述的基底加工装置，其中，所述第一部分和所述第二部分由金属形成，并且所述第二底表面处于比所述第一底表面高的位置。
4.根据权利要求2或3所述的基底加工装置，其中，所述第一底表面具有从大于所述台板的直径10mm的数值至小于所述台板的直径10mm的数值的直径范围。
5.根据权利要求1至3中任一项所述的基底加工装置，其中，所述台板具有比基底的直径小的直径。
6.根据权利要求1至3中任一项所述的基底加工装置，其中，所述台板和所述外周缘环接地，并且高频电源连接至所述上电极。
7.根据权利要求1至3中任一项所述的基底加工装置，还包括排气管，所述排气管设置在所述外周缘环的上方并且在平面图中围绕所述台板，其中，所述排气管设置排气通道，由所述排气管围绕的空间中的气体经由所述排气通道被排放至外部。
8.根据权利要求1至3中任一项所述的基底加工装置，其中，穿透所述上电极的上电极通孔形成在所述台板的中央的正上方。
9.根据权利要求8所述的基底加工装置，还包括用于从所述上电极通孔的上侧向下供应惰性气体的惰性气体供应单元。
10.根据权利要求2所述的基底加工装置，其中，所述第一部分由绝缘体形成，并且所述第二部分由导体形成。
11.根据权利要求2所述的基底加工装置，其中，所述第二底表面处于比所述第一底表面低的位置。
12.一种基底加工方法，包括：
仅将基底的中央部放置在台板上，所述基底具有中央部和用于围绕所述中央部的围绕部；以及
将高频功率施加至所述台板上方的上电极，同时从所述围绕部的下侧通过所述台板的侧表面和外周缘环之间的间隙向所述围绕部的周围供应反应气体，由此在所述围绕部的背表面侧和所述围绕部的侧表面侧生成等离子体以在所述围绕部上执行等离子体加工。
13.根据权利要求12所述的基底加工方法，其中，执行所述等离子体加工同时使惰性气体从所述基底的上表面的中央的正上方的位置沿径向流动。
14.根据权利要求12或13所述的基底加工方法，其中，执行所述等离子体加工，使得仅在所述围绕部上执行所述等离子体加工并且所述等离子体不作用在所述中央部上。
15.根据权利要求12或13所述的基底加工方法，其中，在所述等离子体加工之前，第一膜出现在所述中央部的上表面上，第二膜出现在所述围绕部的上表面上，第三膜出现在所述围绕部的侧表面上，而第四膜出现在所述围绕部的背表面上，并且在所述等离子体加工期间，去除所述第三膜和所述第四膜，同时留下所述第一膜和所述第二膜。
16.根据权利要求12或13所述的基底加工方法，其中，在所述等离子体加工之前，第一膜出现在所述中央部的上表面上，第二膜出现在所述围绕部的上表面上，第三膜出现在所述围绕部的侧表面上，而第四膜出现在所述围绕部的背表面上，所述第三膜和所述第四膜为作为具有内部应力的膜的应力膜，并且在所述等离子体加工期间，应力缓和膜形成在所述应力膜上。
17.根据权利要求12或13所述的基底加工方法，其中，所述反应气体包含氧气。
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